CN110132995A - Defect positioning system and method - Google Patents
Defect positioning system and method Download PDFInfo
- Publication number
- CN110132995A CN110132995A CN201910460972.1A CN201910460972A CN110132995A CN 110132995 A CN110132995 A CN 110132995A CN 201910460972 A CN201910460972 A CN 201910460972A CN 110132995 A CN110132995 A CN 110132995A
- Authority
- CN
- China
- Prior art keywords
- defect
- chip
- defects
- micro
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Abstract
The present invention provides a kind of defect positioning system and defect positioning method, the defect positioning system includes: the first defect location module, is determined in the chip for emitting detection light beam to wafer surface and being scattered according to the chip and/or reflect the optical signal that the detection light beam is formed with the presence or absence of the first position of one or more defect present in defect and the chip；And the second defect location module, first position for the one or more of defects determined according to the first defect location module, micro-imaging is carried out at least one defect in one or more of defects, and the first position of one or more of defects is corrected according to the micro-imaging result of at least one defect, obtain the second position of one or more of defects.The detection efficiency of defective locations can be significantly increased while improving the accuracy rate of defect location in the defect positioning system and defect positioning method of the embodiment of the present invention.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of defect positioning systems and defect positioning method.
Background technique
In semiconductor fabrication process, need to detect the defect on chip using technique is examined to improve the qualification of chip
Rate.The various defects for examining technique not only to need accurately to capture wafer surface, it is also necessary to have high handling capacity.Checking machine
The quality of the detectability of platform decides the superiority and inferiority of manufacture of semiconductor technology stability.
However current inspection technique is difficult to reach balance between efficient detection and accurate detection, such as height is being maintained to gulp down
While the amount of spitting, the defect coordinate that will lead to board detection is not accurate enough；And board is being improved to the accuracy rate of defects detection
Meanwhile it will affect the detection efficiency of board.
Therefore, the accuracy rate and detection efficiency for how taking into account wafer defect detection are current urgent problems to be solved.
Summary of the invention
A kind of defect location system is provided in order to improve accuracy rate and detection efficiency, the embodiment of the present invention of wafer defect detection
System, comprising: the first defect location module is used to scatter to wafer surface transmitting detection light beam and according to the chip and/or anti-
The optical signal that the detection light beam is formed is penetrated to determine in the chip with the presence or absence of one present in defect and the chip
Or the first position of multiple defects；And the second defect location module, for what is determined according to the first defect location module
The first position of one or more of defects, in one or more of defects at least one defect carry out it is micro- at
Picture, and school is carried out according to first position of the micro-imaging result of at least one defect to one or more of defects
Just, the second position of one or more of defects is obtained.
Optionally, the second defect location module is used to be determined according to the first defect location module one
Or the first position of multiple defects, at least one defect in one or more of defects carry out in situ optical microphotograph at
Picture.
Optionally, the second defect location module is according to the micro-imaging result of at least one defect to described one
It includes: the second defect location module according at least one defect that the first position of a or multiple defects, which is corrected,
Micro-imaging result controls the afer rotates or translation, and according to the rotation angle or translational movement of the chip, to described one
The first position of a or multiple defects is corrected.
Optionally, the first defect location module includes: light source, for emitting the detection towards the wafer surface
Light beam；Detector, for detecting chip scattering and/or reflecting optical signal that the detection light beam is formed and generate instruction
The output signal of the optical signal；And first processing unit, for determining the crystalline substance according to the output signal of the detector
With the presence or absence of the first position of one or more defect present in defect and the chip in piece.
Optionally, the second defect location module includes: optical micro imaging device, for according to first defect
The first position for one or more of defects that locating module determines lacks at least one of one or more of defects
It is trapped into row micro-imaging；And second processing device, the micro-imaging result at least one defect according to is to described
The first position of one or more defects is corrected, and obtains the second position of one or more of defects.
Optionally, the optical micro imaging device includes optical microscopy.
Optionally, the second processing device is also used to: according to the first position of determining one or more of defects,
It controls the chip and makees the first rotary motion and/or the first translational motion, be located at the first position of at least one defect
In the visual field of the optical micro imaging device.
Optionally, the second processing device is also used to: when the first position of at least one defect is located at the light
It learns in the visual field of microscopic imaging device and described at least one defect is not present in the visual field of the optical micro imaging device
When, it controls the chip and makees the second rotary motion and/or the second translational motion, so that at least one described defect is located at the light
In the visual field for learning microscopic imaging device；And the rotation angle of second rotary motion is made according to the chip and/or makees institute
The displacement for stating the second translational motion generation, is corrected the first position of one or more of defects, obtains one
Or the second position of multiple defects.
Optionally, the defect positioning system further include: chip motion-control module, the chip motion-control module base
Make first rotary motion and/or described in the first instruction received from the second processing device to control the chip
First translational motion.
Optionally, the defect positioning system further include: chip motion-control module, the chip motion-control module base
Make second rotary motion and/or described in the second instruction received from the second processing device to control the chip
Second translational motion.
Optionally, the defect positioning system further include: chip motion-control module, the chip motion-control module base
Make third rotary motion and/or third translation in the third instruction received from first processing unit to control the chip
Movement, so that the detection light beam is scanned the wafer surface.
Optionally, the chip motion-control module includes motion controller, and the chip motion-control module further includes
Rotate microscope carrier and/or translation microscope carrier；The motion controller is used for: controlling the chip rotation by controlling the rotation microscope carrier
Turn, and/or control the chip translation by controlling the translation microscope carrier.
Optionally, the detector includes: the first photodetector, described in receiving within the scope of the first space angle
Chip scatters and/or reflects the first optical signal that the detection light beam is formed, and generates the first of instruction first optical signal
Output signal；And second photodetector, for receiving the chip scattering and/or reflection in second space angular range
The second optical signal that the detection light beam is formed, and generate the second output signal for indicating second optical signal；Described first
Processing unit is used to be determined in the chip according to the relative size of first output signal and second output signal
The first position of one or more defect present in no existing defects and the chip.
Correspondingly, the embodiment of the present invention also provides a kind of defect positioning method, comprising: emits detection light to wafer surface
Beam；It is scattered according to the chip and/or reflects the optical signal that the detection light beam is formed and determined in the chip with the presence or absence of scarce
The first position of one or more defect present in the sunken and described chip；According to determining one or more of defects
First position, in one or more of defects at least one defect carry out micro-imaging；And according to it is described at least
The micro-imaging result of one defect is corrected the first position of one or more of defects, obtains one or more
The second position of a defect.
Optionally, according to the first position of determining one or more of defects, in one or more of defects
At least one defect carry out micro-imaging include: that light is utilized according to the first position of determining one or more of defects
It learns microscopic imaging device and optical microscopy imaging is carried out in situ at least one defect in one or more of defects.
Optionally, according to the micro-imaging result of at least one defect to one or more defects in the chip
To be corrected include: to control afer rotates or flat according to the micro-imaging result of at least one defect for first position
It moves, and according to the rotation angle or translational movement of the chip, the first position of one or more of defects is corrected.
Optionally, according to the first position of determining one or more of defects, optical micro imaging device pair is utilized
It includes: according to determining described one that at least one defect in one or more of defects carries out optical microscopy imaging in situ
The first position of a or multiple defects controls the chip and makees the first rotary motion and/or the first translational motion, make it is described at least
The first position of one defect is located in the visual field of the optical micro imaging device.
Optionally, according to the micro-imaging result of at least one defect to first of one or more of defects
Set the visual field for being corrected and including: be located at the optical micro imaging device when the first position of at least one defect it is interior,
And at least one described defect controls the chip and makees the second rotation when being not present in the visual field of the optical micro imaging device
Transhipment is moved and/or the second translational motion, so that at least one described defect is located in the visual field of the optical micro imaging device；
And the rotation angle of second rotary motion is made according to the chip and/or makees the position that second translational motion generates
It moves, the first position of one or more of defects is corrected, the second position of one or more of defects is obtained.
Optionally, during emitting detection light beam to the wafer surface, the method also includes: control the crystalline substance
Piece makees third rotary motion and/or third translational motion, so that the detection light beam is scanned the wafer surface.
Optionally, it is scattered according to the chip and/or reflects the optical signal that the detection light beam is formed and determine the chip
Present in one or more defect first position include: received within the scope of the first space angle chip scattering and/
Or the first optical signal that the reflection detection light beam is formed, and generate the first output signal for indicating first optical signal；?
The chip scattering is received in second space angular range and/or reflects the second optical signal that the detection light beam is formed, and is produced
Raw the second output signal for indicating second optical signal；And according to first output signal and second output signal
Relative size determine in the chip with the presence or absence of first of one or more defect present in defect and the chip
Position.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
The defect positioning system of the embodiment of the present invention includes the first defect location module and the second defect location module, described
First defect location module is by emitting detection light beam to wafer surface and the inspection being scattered and/or reflected according to the chip
It surveys the optical signal that light beam is formed and determines that whether there is one or more present in defect and the chip in the chip lacks
Sunken first position, to realize the Primary Location to the defects of the chip；The second defect location module is according to institute
The first position for stating one or more of defects that the first defect location module determines, in one or more of defects
At least one defect carries out micro-imaging, and according to the micro-imaging result of at least one defect to one or more of
The first position of defect is corrected, and obtains the second position of one or more of defects, to realize in the chip
Defect accurate positioning, can reduce or eliminate because chip can not be aligned or the factors such as the high speed rotation of chip caused by it is brilliant
The error of piece defect location, the deviations of each defect due to caused by systematic error are not much different, and described second lacks
Sunken locating module only needs be that segmental defect carries out micro-imaging at least one defect in all defect detected,
And unified correction is carried out according to first position of the micro-imaging result of segmental defect to all defect, defect can improved
While the accuracy rate of positioning, the detection efficiency of defective locations is significantly increased.
Further, since the second defect location module is used for the institute determining according to the first defect location module
The first position for stating one or more defects carries out optics at least one defect in one or more of defects in situ
Micro-imaging is corrected without chip is transferred to other systems with the position to defect in chip, thus the present invention is real
The defect positioning system for applying example passes through the technological means that corrects in situ and further improves efficiency to wafer defect position detection,
Be conducive to improve handling capacity.
Further, the second defect location module includes optical micro imaging device, the optical microscopy imaging dress
Setting may include optical microscopy, since optical microscopy has lower cost, increases optics on detection board and shows
Micro- function is easy easily to be realized, strong operability.
The defect positioning method of the embodiment of the present invention, by emitting detection light beam to wafer surface, and according to the chip
It scatters and/or reflects the optical signal that the detection light beam is formed and determine in the chip with the presence or absence of defect and the chip
Present in one or more defect first position, to realize to the Primary Location of defect in the chip；According to determination
One or more of defects first position, in one or more of defects at least one defect carry out it is micro- at
Picture, and school is carried out according to first position of the micro-imaging result of at least one defect to one or more of defects
Just, the second position of one or more defects in the chip is obtained, to realize to the accurate of the defects of the chip
Positioning, with reduce or eliminate because chip can not be aligned or the factors such as the high speed rotation of chip caused by wafer defect position mistake
Difference, since the deviations of defect are mainly systematic error, and systematic error is not much different for each defect, therefore institute
State the second defect location module only need for example to can be at least one defect in all defect detected segmental defect into
Row micro-imaging, and unified correction, energy are carried out according to first position of the micro-imaging result of segmental defect to all defect
Enough while improving the accuracy rate of defect location, the detection efficiency of defective locations is significantly increased.
Further, the method includes the first position according to determining one or more of defects, optics is utilized
Microscopic imaging device carries out optical microscopy imaging at least one defect in one or more of defects in situ, without
Chip is transferred to other systems to be corrected with the position to defect in chip, thus the defect location side of the embodiment of the present invention
Method passes through the technological means corrected in situ and further improves the efficiency of wafer defect position detection, is conducive to improve handling capacity.
Detailed description of the invention
Fig. 1 is the structural block diagram of the defect positioning system 10 of one embodiment of the invention；
Fig. 2 is the structural schematic diagram of the defect positioning system 20 of another embodiment of the present invention；
Fig. 3 is the top view of the chip 24 of embodiment illustrated in fig. 2 of the present invention；
Fig. 4 is the flow chart of the defect positioning method 30 of one embodiment of the invention.
Specific embodiment
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.Each embodiment in this specification is described in a progressive manner, each implementation
What example stressed is the difference from other embodiments, and same or similar part refers to each other i.e. between each embodiment
It can.
It is the structural block diagram of the defect positioning system 10 of one embodiment of the invention with reference to Fig. 1, Fig. 1.In some embodiments
In, the defect positioning system 10 may include the first defect location module 11 and the second defect location module 12.
The first defect location module 11 is used to emit detection light beam to wafer surface and be scattered according to the chip
And/or the optical signal of the reflection detection light beam formation is determined to whether there is in the chip and be deposited in defect and the chip
One or more defects first position.
The second defect location module 12 be used for according to the first defect location module 11 determine it is one or
The first position of multiple defects carries out micro-imaging at least one defect in one or more of defects, and according to institute
The micro-imaging result for stating at least one defect is corrected the first position of one or more of defects, obtains described one
The second position of a or multiple defects.
In some embodiments, the first defect location module 11 may include: light source 111, be used for towards the crystalline substance
Light beam is detected described in piece surface emitting；Detector 112, for detecting the chip scattering and/or reflecting the detection light beam shape
At optical signal and generating indicate the output signal of the optical signal；And first processing unit 113, for according to the spy
The output signal for surveying device 112 determines in the chip to be lacked with the presence or absence of one or more present in defect and the chip
Sunken first position.
In some embodiments, the light source 111 can be laser source, for emitting detection laser to the wafer surface
Beam, such as the light source 111 may include laser.The detector 112 can be photodetector, for receiving the crystalline substance
Piece scatters and/or reflects optical signal and the optical signal is converted to electric signal and is exported that the detection light beam is formed, such as
The detector 112 can be avalanche photodide (Avalanche Photodiode Detector, APD) detector.Institute
Data connection can be had with the detector 112 by stating the first processing unit 113, and first processing unit 113 can receive institute
The electric signal of the output of detector 112 is stated, and the electric signal is handled by preset algorithm to detect and whether there is defect in chip,
And the position coordinates of detected each defect are determined and record, to obtain the defect map of the chip
(defect map)。
In some embodiments, the first defect location module 11 can also include the first focus pack (not shown) and
Second focus pack (not shown).First focus pack is set between the light source 111 and the wafer surface, is used for
The detection light beam that the light source 111 emits is focused to certain point of the wafer surface, certain described point can be current detection point.
Second focus pack is set between the wafer surface and the detector 112, for the chip to be scattered and/or
The optical signal that the detection light beam is formed is reflected to focus on the detector 112.
In some embodiments, first focus pack and second focus pack can include convergent lens or
Lens group.
In some embodiments, the second defect location module 12 may include optical micro imaging device 121 and
Two processing units 122, the optical micro imaging device 121 are used for according to the first defect location module 11 determination
The first position of one or more defects carries out micro-imaging, institute at least one defect in one or more of defects
State second processing device 122 for according to described at least one defect micro-imaging result to one or more of defects
First position is corrected, and obtains the second position of one or more of defects.
In some embodiments, the second processing device 122 can be according to the micro-imaging of at least one defect
As a result the afer rotates or translation are controlled, and according to the rotation angle or translational movement of the chip, to one or more of
The first position of defect is corrected.
In some embodiments, first processing unit 113 and the second processing device 122 can share a meter
Calculation system, and realized by the different processing program in a computing system, the computing system can be computer.
In some embodiments, the light source 111 can have fixed position in space.The light source 111 to
During wafer surface transmitting detection light beam, the chip is rotated and/or in preset speed with preset angular speed
Translation, so that the first defect location module 11 is scanned detection to the defects of described chip.
In other embodiments, the light source 111 in space can be fixed with shift position, the chip,
The scanning to the wafer surface is then realized by the mobile light source 111.
In some embodiments, the optical micro imaging device 121 may include optical microscopy, the optical microphotograph
Mirror can integrate in SP2 board, and SP2 board is widely used in offline particle (offline particle) detection of FAB factory,
Its feature is to guarantee with the ability and handling capacity with higher for accurately capturing bare silicon wafer (bare wafer) surface defect
The off-line data of FAB factory is efficiently and accurately collected, and the health for realizing the daily monitor check of production board carries out.But
SP2 board also has a disadvantage, such as the defect coordinate of scanning result of board the reason of being inaccurate, this problem is caused to occur is extremely
Less include two o'clock: first is that the chip majority that is scanned of SP2 board is control wafer, there is no pattern that can provide board on chip and carry out pair
It is quasi-；Second is that chip is in continuous high-speed rotation, and the rotation of chip influences whether defect coordinate when SP2 board is scanned
Accuracy (revolving speed of chip is about 11.98cm/s).
Therefore, the defect positioning system 10 of the embodiment of the present invention includes two kinds of defect location modules: first defect
Locating module 11 is used to carry out the defects of chip Primary Location, and the second defect location module is used to lack to described first
The position coordinates for falling into the defects of described chip that locating module 11 determines are corrected, to realize the accurate positioning of defect.
In some embodiments, the optical micro imaging device 121 can spatially have fixed position, described
Second processing device 122 is also used to: according to the of one or more of defects that the first defect location module 11 determines
One position controls the chip and makees the first rotary motion and/or the first translational motion, makes first of at least one defect
Setting in the visual field of the optical micro imaging device 121.Here " first position of at least one defect is located at institute
In the visual field for stating optical micro imaging device 121 " refer to, the coordinate of the first position of at least one defect is moved to institute
In the visual field for stating optical micro imaging device 121.As it was noted above, using the first defect location module 11 to the crystalline substance
When the defect of on piece carries out Primary Location, the chip is generally in high-speed rotating state, therefore the chip detected
In one or more defects first position and its physical location might have deviation.Even if the of at least one defect
One position is located in the visual field of the optical micro imaging device 121, at least one described defect (i.e. defect characteristic itself) can
It can be not present in the visual field of the optical micro imaging device 121.
In some embodiments, the second processing device 122 is also used to: when the first position of at least one defect
In the visual field of the optical micro imaging device 121 and at least one described defect be not present in the optical microphotograph at
As device 121 visual field in when, control the chip and make the second rotary motion and/or the second translational motion so that it is described at least
One defect is located in the visual field of the optical micro imaging device 121；And second rotation is made according to the chip and is transported
Dynamic rotation angle and/or make the displacement that second translational motion generates, to the first position of one or more of defects
It is corrected, obtains the second position of one or more of defects.
In some embodiments, the number of at least one defect can be greater than 1, and can be less than described first and lack
The total number of one or more defects in the chip that locating module 11 detects is fallen into, such as can choose described first and lack
A defect for being located at the center wafer is fallen into all defect that locating module 11 detects and around the center wafer
It is distributed in the coordinate of the first position of four defects of different directions, using the optical micro imaging device 121 to described five
A defect carries out optical microscopy imaging respectively, when in the visual field that some defect does not come across the optical micro imaging device 121
When, the second processing device 122 then controls the chip and makees second rotary motion and/or the second translational motion, so that
In the defect movement to the visual field of the optical micro imaging device 121, the second processing device 122 is recorded described at this time
Chip makees the rotation angle of second rotary motion and/or makees the displacement that the second translational motion generates.
In some embodiments, the coordinate of the first position of five defects may have large error, utilize
When the optical micro imaging device 121 carries out optical microscopy imaging to five defects respectively, it may fail to find institute
State the presence of five defects, thus can generate with five defects correspondingly five rotation angles of the chip and/
Or five displacements, the second processing device 122 is also used to rotate five of chip five positions of angle and/or chip at this time
It moves and is averaging, and the average value of the displacement according to the average value and/or chip of the rotation angle of the chip of acquisition, to described first
Unified correction is made in the first position for one or more defects in the chip that defect location module 11 detects, obtains institute
State the second position of one or more defects.
Since the systematic error because of defect location caused by the factors such as chip high speed rotation differs for each defect
It is not too large, the deviations of part of defect are measured come to all scarce in the chip by optical microscopy imaging technology
Sunken first position carries out unified correction, is conducive to the detection efficiency for improving wafer defect, and then improve handling capacity.
In further embodiments, may only have in five defects the first position of segmental defect coordinate exist compared with
Big error then only generates several rotation angles with the segmental defect the second rotary motion of the chip work correspondingly
And/or the chip makees several displacements of the second translational motion, if the second processing device 122 is also used to chip at this time
Several displacements of dry rotation angle and/or chip are averaging, and the average value and/or crystalline substance of the rotation angle according to the chip of acquisition
The average value of the displacement of piece, one or more defects in the chip that the first defect location module 11 is detected
Unified correction is made in first position, obtains the second position of one or more of defects.
In some embodiments, in order to improve the accuracy of defect location, the number of at least one defect can also be with
The total number of the one or more defects in chip detected equal to the first defect location module 11, then the optics is aobvious
Micro- imaging device 121 for carrying out optical microscopy imaging to all defect in chip respectively, if currently carrying out micro-imaging
The coordinate of the first position of defect come across in the visual field of the optical micro imaging device 121 and the defect itself not
When coming across in the visual field of the optical micro imaging device 121, the second processing device 122 is made for controlling the chip
Second rotary motion and/or the second translational motion, so that view of the defect movement to the optical micro imaging device 121
In, at this time the second processing device 122 can be made according to the chip second rotary motion rotation angle and/or
The displacement for making the second translational motion generation corrects the first position coordinate of the defect of current detection in real time.
In some embodiments, it can be along clockwise rotation or along the inverse time that the chip, which makees second rotary motion,
The rotation of needle.
In some embodiments, in order to improve the accuracy of defect location, the second processing device 122 is also used to: root
According to the first position of determining one or more of defects, controls the chip and make first rotary motion and/or described
First translational motion is located at the first position of at least one defect in the visual field of the optical micro imaging device 121
The heart, and when at least one described defect is not present in the field of view center of the optical micro imaging device 121, described second
Processing unit 122 makees second rotary motion and/or the second translational motion for controlling the chip, so that described at least one
A defect is located at the field of view center of the optical micro imaging device 121.
In some embodiments, testing staff can use the optical micro imaging device 121 to it is described at least one
Defect is observed, to judge that at least one described defect whether there is in the visual field of the optical micro imaging device 121.
If it does not exist, then the second processing device 122 controls the chip and makees the second rotary motion in response to the first user instruction
And/or second translational motion.First user instruction can have multiple, and the second processing device 122 can control described
Chip makees multiple the second rotary motion and/or the second translational motion, until by least one described defect movement to the light
In the visual field for learning microscopic imaging device 121.The second processing device 122 may include graphic user interface (GUI), work as detection
Personnel have found that any defect at least one described defect can not be found in the visual field of the optical micro imaging device 121
When, it can be by the graphic user interface, such as click " rotation " and/or " translation " the button control chip makees described the
Two rotary motions and/or the second translational motion, or manual operation control institute for controlling the control handle of the chip movement
It states chip and makees second rotary motion and/or the second translational motion, so that any defect appears in the optical microphotograph
In the visual field of imaging device 121, " correction " button on the graphic user interface is then clicked, then the second processing device
122 record and the rotation angle of the second rotary motion of any corresponding chip work of defect in response to second user instruction
Degree makees the displacement that the second translational motion generates.
When the number for carrying out at least one defect described in optical microscopy imaging is less than the first defect location module 11
When the total number of the defects of the chip detected, the second processing device 122 is first remembered in response to second user instruction
The rotation angle of record the second rotary motion of the lower chip work corresponding with each defect at least one described defect or
The displacement for making the second translational motion generation, then according to the average value of several rotation angles of record or being averaged for several displacements
Value, carries out unified correction to the first position of all defect in the chip.When carry out optical microscopy imaging described at least
It is described when the number of one defect is equal to the defects of the chip that the first defect location module 11 detects total number
Second processing device 122 is in response to second user instruction according to the crystalline substance corresponding with the current progress defect of micro-imaging
Piece makees the rotation angle of the second rotary motion or makees the displacement that the second translational motion generates, directly to the defect of current detection
First position carries out real time correction, and in this case, the correcting value of the first position of each defect may be different, setting accuracy
It is higher, but opposite former scheme is more time-consuming.
In further embodiments, the optical micro imaging device 121 may include that micro-imaging component and image pass
Sensor, the micro-imaging component may include the mirror of the amplification factor with certain of multiple reflecting mirrors and/or lens composition
Group, described image sensor can be cmos image sensor or charge-coupled device (Charge Coupled Device,
CCD).Wherein, the second processing device 122 and the optical micro imaging device 121 can have data connection, and described
Two processing units 122 can receive the image data that the optical micro imaging device 121 acquires, the second processing device
122 can also include display interface, for showing the micro-image of the first position comprising at least one defect.Described
The image data judgement that two processing units 122 can be also used for being acquired according to the optical micro imaging device 121 is described at least
One defect whether there is in the visual field of the optical micro imaging device 121.The number of at least one defect can be with
Be it is multiple, the optical micro imaging device 121 can be according to the coordinate of the first position of the multiple defect, to the multiple
Defect carries out micro-imaging respectively, and the second processing device 122 can be sentenced one by one according to the micro-image of the multiple defect
The multiple defect of breaking whether there is in the visual field of the optical micro imaging device 121.
In some embodiments, the defect positioning system further includes chip motion-control module 13, the chip movement
Control module 13 can make described the based on the first instruction received from the second processing device 122 to control the chip
One rotary motion and/or the first translational motion.13 pieces of the chip motion control mould can be based on from the second processing device
122 the second instructions received make second rotary motion and/or the second translational motion to control the chip.The chip
Motion-control module 13 can control the chip based on the third instruction received from first processing unit 113 and make the
Three rotary motions and/or third translational motion, so that the detection light beam is scanned the wafer surface.
In some embodiments, the chip motion-control module 13 may include motion controller 131, the chip fortune
Dynamic control module 13 can also include rotation microscope carrier 132 and/or translation microscope carrier 133.The motion controller 131 is used for: being passed through
It controls the rotation microscope carrier 132 and controls the rotation of the chip, and/or control the crystalline substance by controlling the translation microscope carrier 133
The translation of piece.
In some embodiments, the detector 112 of the first defect location module 11 may include the first photodetection
Device (not shown) and the second photodetector (not shown).First photodetector is used within the scope of the first space angle
It receives the chip scattering and/or reflects the first optical signal that the detection light beam is formed, and generate instruction the first light letter
Number the first output signal.Second photodetector in second space angular range for receiving the chip scattering
And/or the second optical signal that the reflection detection light beam is formed, and generate the second output signal for indicating second optical signal.
First processing unit 113 is used to determine institute according to the relative size of first output signal and second output signal
It states in chip with the presence or absence of the first position of one or more defect present in defect and the chip.
It is the structural schematic diagram of the defect positioning system 20 of another embodiment of the present invention with reference to Fig. 2, Fig. 2.
In some embodiments, the defect positioning system 20 may include: the first defect location module, and described first lacks
Sunken locating module includes light source 211, the first photodetector 212a, the second photodetector 212b and the first processing unit.This
First processing unit in embodiment can be computing system 26.The light source 211 is used for towards 24 surface emitting of chip
Detection laser beam, the first photodetector 212a within the scope of the first space angle DW for receiving the chip scattering
And/or the first optical signal that the reflection detection laser beam is formed, and generate the first output letter of instruction first optical signal
Number, the second photodetector 212b within the scope of second space angle DN for receiving the chip scattering and/or reflection
The second optical signal that the detection laser beam is formed, and generate the second output signal for indicating second optical signal.The meter
Calculation system 26 can be respectively provided with data connection with the first photodetector 212a and the second photodetector 212b, described
Computing system 26 is used to receive the first output signal from the first photodetector 212a and comes from second photoelectricity
The second output signal of detector 212b, and it is true according to the relative size of first output signal and second output signal
With the presence or absence of the position of one or more defect present in defect and the chip 24 in the fixed chip 24.
In some embodiments, the light source 211 is used to swash along the direction transmitting detection perpendicular to 24 surface of chip
Light beam.The computing system 26 is also used to: when the difference of first output signal and second output signal is less than a certain
When preset threshold, the current detection point existing defects on the chip 24 are determined, it is on the contrary then defect is not present.Because if on chip
Defect is not present in certain point, then the overwhelming majority can be visited along backtracking by second photoelectricity after detection laser beam is irradiated to the point
Device 212b is surveyed to receive, and the echo signal intensity that the first photodetector 212a is detected is almost nil；And if on chip
Certain point existing defects, then detection laser beam is irradiated to the scattering light that will form after the point along different directions, then first photoelectricity
Detector 212a and the second photodetector 212b can receive part echo signal.
In some embodiments, the range of the first space angle DW can be 30 ° to 72 °, the second space angle
The range of degree DN can be 6 ° to 25 °.
In some embodiments, the first defect location module further include the first focus pack (not shown), it is second poly-
Burnt component 251 and tertiary focusing component 252.First focus pack is used for the detection laser beam for emitting the light source 211
Focus to 24 surface of chip.Second focus pack 251 is used to scatter and/or reflect the detection for the chip 24
The first optical signal that light beam is formed focuses to the first photodetector 212a, wherein first optical signal is located at described the
Within the scope of one space angle DW.The tertiary focusing component 252 is used to scatter and/or reflect the detection light for the chip 24
The second optical signal that beam is formed focuses to the second photodetector 212b, wherein second optical signal is located at described second
Within the scope of space angle DN.
As shown in figure 3, Fig. 3 is the top view of the chip 24 of embodiment illustrated in fig. 2 of the present invention.In some embodiments,
The chip 24 can be rotated with preset angular velocity omega, and the detection laser beam that the light source 211 is emitted is to institute
24 surface of chip is stated to be scanned.The chip 24 can also translate preset length along radial direction after often rotating a circle, from
And the different circumferencial directions along chip are scanned.
In some embodiments, the defect positioning system 20 further includes the chip movement control for driving the chip movement
Molding block, the chip motion-control module may include motion controller 231, rotation microscope carrier 233, translation 232 and of microscope carrier
234, the motion controller 231 controls the rotation of the chip 24 by controlling the rotation microscope carrier 233, and passes through control
The translation microscope carrier 232 and 234 controls the translation of the chip.Specifically, the motion controller 231 is described flat by controlling
Load transfer station 232 controls the chip 24 along the translation of z-axis, and the motion controller 231 is controlled by controlling the translation microscope carrier 234
The chip 24 is made along the translation of x-axis and y-axis.
In other embodiments, the position of the rotation microscope carrier 233 and the translation microscope carrier 232 can be interchanged.
In further embodiments, the chip motion-control module can also include control handle, and testing staff can be with
The rotation or translation of the chip 24 are manually controlled by the control handle.
In some embodiments, the defect positioning system 20 further includes the second defect location module, second defect
Locating module includes optical micro imaging device 221 and second processing device, and the optical micro imaging device 221 is used for institute
The first position for stating at least one defect in one or more defects carries out micro-imaging.The second processing device is used for root
The first position of one or more of defects is corrected according to the micro-imaging result of at least one defect, obtains institute
State the second position of one or more defects.In the present embodiment, the second processing device can be the computing system 26, i.e.,
First processing unit and the second processing device can share the same computing system 26, and pass through the calculating respectively
Different processing program in system 26 realizes its respective function.
In some embodiments, the optical micro imaging device 221 can be optical microscopy.The optical microscopy
It can spatially be fixed with position, then the second processing device is also used to the institute determined according to the first defect location module
The first position for stating one or more defects controls the chip 24 and makees the first rotary motion and/or the first translational motion, makes institute
The first position for stating at least one defect is located in the visual field of the optical microscopy, and such testing staff can pass through the light
It learns microscopical eyepiece and observes at least one described defect with the presence or absence of in the visual field of the optical microscopy.
In some embodiments, lacking for current detection is not observed in the visual field of the optical microscopy as testing staff
When falling into, testing staff can input the first user instruction, such as point by the graphic user interface (GUI) of the computing system 26
" rotation " or " translation " button on the graphic user interface is hit, then the second processing device passes through the computing system 26
In corresponding processing routine in response to first user instruction, control the chip 24 and make the second rotary motion and/or second
Translational motion, so that the defect of the current detection is located in the visual field of the optical microscopy.Specifically, can make described
The defect of current detection is located at the field of view center of the optical microscopy.It is shown when the defect of the current detection is located at the optics
After the field of view center of micro mirror, testing staff can input second user by the graphic user interface of the computing system 26 and refer to
It enables, such as clicks " correction " button on the graphic user interface, then the computing system 26 makees institute according to the chip 24
The rotation angle and/or the chip 24 for stating the second rotary motion make the displacement of the second translational motion generation to described current
The first position of the defect of detection carries out real time correction；Or first record the crystalline substance corresponding with the defect of the current detection
Piece 24 makees the rotation angle of second rotary motion and/or makees the displacement that second translational motion generates, aobvious to optics
After the completion of several defects detections of micro- imaging, second rotation is made with several one-to-one chips of defect according to record
The dynamic several rotation angles of transhipment and/or the respective average value of several displacements for making the second translational motion generation, to described
The first position of all defect in chip 24 carries out unified correction.
In some embodiments, the motion controller 231 can have communication connection with the computing system 26, described
Motion controller 231 is controlled the chip 24 based on the first instruction received from the computing system 26 and makees first rotation
Transhipment is moved and/or the first translational motion, and the first position of at least one defect is made to be located at the optical micro imaging device
In 221 visual field.The motion controller 231 controls the crystalline substance based on the second instruction received from the computing system 26
Piece 24 makees second rotary motion and/or the second translational motion, so that the feature of at least one defect itself is located at institute
In the visual field for stating optical micro imaging device 221.The motion controller 231 is based on received from the computing system 26
Three instructions make third rotary motion and/or third translational motion to control the chip 24, so that the detection laser beam is to institute
24 surface of chip is stated to be scanned.
The function of each module and alternative embodiment can refer to Fig. 1 reality in the embodiment of the present invention defect positioning system 20
The corresponding description of example is applied, details are not described herein again.
The embodiment of the present invention also provides a kind of defect positioning method.It is that the defect of one embodiment of the invention is fixed with reference to Fig. 4
The flow chart of position method 30.
In some embodiments, the defect positioning method 30 may include: S31, emit detection light beam to wafer surface；
S33, the optical signal for being scattered according to the chip and/or reflecting the detection light beam formation determine in the chip with the presence or absence of scarce
The first position of one or more defect present in the sunken and described chip；S35, according to determining one or more of
The first position of defect carries out micro-imaging at least one defect in one or more of defects；And S37, according to
The micro-imaging result of at least one defect is corrected the first position of one or more of defects, obtains described
The second position of one or more defects.
In some embodiments, in step S31, emitting detection light beam to wafer surface includes: the rotation of Xiang Yiyi fixed angular speed
The wafer surface transmitting detection light beam turned, to be scanned to wafer surface.The angular speed of the afer rotates can be
11.98cm/s.The detection light beam can be laser beam.
In further embodiments, in step S31, emitting detection light beam to wafer surface may include: with certain angle
Speed changes the incidence point to the surface emitting of chip detection light beam, to carry out rotary scanning to wafer surface.
When carrying out defects detection to wafer surface, in order to improve handling capacity, the angular velocity of rotation of chip would generally be arranged
Must be very high, this will lead to the physical location of the first position of defect and the defect in the chip determined in step S33 and produces
Raw deviation, it is therefore desirable to be corrected by means of first position of the step S35 and S37 to the defect determined in step S33.
In some embodiments, in step S35, according to the first position of determining one or more of defects, to institute
Stating at least one defect in one or more defects and carrying out micro-imaging includes: according to determining one or more of defects
First position, at least one defect in one or more of defects is carried out in situ using optical micro imaging device
Optical microscopy imaging.
In some embodiments, according to the first position of determining one or more of defects, using optical microphotograph at
It include: according to determination as device carries out optical microscopy imaging at least one defect in one or more of defects in situ
One or more of defects first position, control the chip and make the first rotary motion and/or the first translational motion, make
The first position of at least one defect is located in the visual field of the optical micro imaging device.
In some embodiments, in step S37, according to the micro-imaging result of at least one defect to the chip
In to be corrected include: micro-imaging result control according at least one defect the first positions of one or more defects
The afer rotates or translation are made, and according to the rotation angle or translational movement of the chip, to one or more of defects
First position is corrected.
In some embodiments, in step S37, the rotation of the chip can be rotation clockwise or counterclockwise
Turn, the translational movement can be the translational displacement of the chip.
In some embodiments, the number of " at least one defect " in step S35 can be less than in step S33 and examine
The total number of one or more defect present in the chip measured, it can selected section defect carry out optical microphotograph at
Picture, such as can choose positioned at a defect of the center wafer and be distributed in different directions around the center wafer
Four defects first position coordinate, according in step S33 determine five defects first position coordinate distinguish
Optical microscopy imaging is carried out to five defects, then in step S37, according to the micro-imaging result of five defects
Unified correction is carried out to the first position of all defect.Due to chip high speed rotation etc. in the Primary Location of step S31 and S33
Systematic error caused by factor differs not too large for each defect, is lacked by optical microscopy imaging technology measurement part
Sunken deviations carry out unified position correction to all defect in the chip, can further increase in chip
The efficiency of defect location improves handling capacity.
In some embodiments, in step S37, according to the micro-imaging result of at least one defect to one
Or the first position of multiple defects is corrected further include: when at least one described defect is not present in the optical microscopy imaging
When in the visual field of device, control the chip and make the second rotary motion and/or the second translational motion so that it is described at least one lack
It falls into the visual field of the optical micro imaging device；And make the rotation angle of second rotary motion according to the chip
The displacement that second translational motion generates is spent and/or made, the first position of one or more of defects is corrected, is obtained
To the second position of one or more of defects.
In some embodiments, the defect positioning method 30 can also include: to judge institute between step S35 and S37
State whether at least one defect is located in the visual field of the optical micro imaging device.The judgment step can both pass through processing
The image that device directly handles the optical micro imaging device acquisition is realized, it is also possible by means testing staff observes the optics
The visual field of microscopic imaging device realizes, such as when at least one described defect is not present in the optical micro imaging device
When in visual field, the processor receives user instruction and determines at least one described defect not in response to the user instruction
It is present in the visual field of the optical micro imaging device.
In some embodiments, during step S31, Xiang Suoshu wafer surface transmitting detection light beam, the defect
Localization method 30 can also include: that the control chip makees third rotary motion and/or third translational motion, so that the detection
Light beam is scanned the wafer surface.
In some embodiments, it in step S33, is scattered according to the chip and/or reflects what the detection light beam was formed
Optical signal determines that the first position of one or more defect present in the chip includes: inscribed in the first space angle range
It receives the chip scattering and/or reflects the first optical signal that the detection light beam is formed, and generate instruction first optical signal
The first output signal；The chip scattering is received in second space angular range and/or reflects the detection light beam is formed
The second optical signal, and generate the second output signal for indicating second optical signal；And according to first output signal
It determines in the chip with the relative size of second output signal with the presence or absence of one present in defect and the chip
The position of a or multiple defects.For example, can be by comparing the difference of first output signal and second output signal
It is determined with preset threshold in the chip with the presence or absence of defect.
The detailed implementation of each step can refer to the defect of present invention in the defect positioning method 30
Corresponding description in positioning system 10 and 20, details are not described herein again.
In conclusion the defect positioning system of the embodiment of the present invention includes the first defect location module and the second defect location
Module, the first defect location module is by emitting detection light beam to wafer surface and according to chip scattering and/or instead
The optical signal that the detection light beam is formed is penetrated to determine in the chip with the presence or absence of one present in defect and the chip
Or the first position of multiple defects, to realize the Primary Location to the defects of the chip；The second defect location mould
The first position for one or more of defects that root tuber is determined according to the first defect location module, to one or more of
At least one defect in defect carries out micro-imaging, and according to the micro-imaging result of at least one defect to described one
The first position of a or multiple defects is corrected, and obtains the second position of one or more of defects, to realize to institute
State the accurate positioning of the defects of chip, can reduce or eliminate because chip can not be aligned or the factors such as the high speed rotation of chip
The error of caused wafer defect positioning, the deviations of each defect due to caused by systematic error are not much different, institute
Stating the second defect location module only needs be that segmental defect is carried out at least one defect in all defect detected
Micro-imaging, and unified correction is carried out according to first position of the micro-imaging result of segmental defect to all defect, it can
The efficiency of defective locations detection is increased substantially while guaranteeing defect location accuracy rate.
Further, since the second defect location module is used for the institute determining according to the first defect location module
The first position for stating one or more defects carries out optics at least one defect in one or more of defects in situ
Micro-imaging is corrected without chip is transferred to other systems with the position to defect in chip, thus the present invention is real
The defect positioning system for applying example passes through the technological means that corrects in situ and further improves efficiency to wafer defect position detection,
Be conducive to improve handling capacity.
Further, the second defect location module includes optical micro imaging device, the optical microscopy imaging dress
Setting may include optical microscopy, since optical microscopy has lower cost, increases optics on detection board and shows
Micro- function is easy easily to be realized, strong operability.
The defect positioning method of the embodiment of the present invention, by emitting detection light beam to wafer surface, and according to the chip
It scatters and/or reflects the optical signal that the detection light beam is formed and determine in the chip with the presence or absence of defect and the chip
Present in one or more defect first position, to realize to the Primary Location of defect in the chip；According to determination
One or more of defects first position, in one or more of defects at least one defect carry out it is micro- at
Picture, and school is carried out according to first position of the micro-imaging result of at least one defect to one or more of defects
Just, the second position of one or more defects in the chip is obtained, to realize to the accurate of the defects of the chip
Positioning, with reduce or eliminate because chip can not be aligned or the factors such as the high speed rotation of chip caused by wafer defect position mistake
Difference, since the deviations of defect are mainly systematic error, and systematic error is not much different for each defect, therefore institute
State the second defect location module only need for example to can be at least one defect in all defect detected segmental defect into
Row micro-imaging, and unified correction, energy are carried out according to first position of the micro-imaging result of segmental defect to all defect
The enough efficiency that defective locations detection is increased substantially while guaranteeing defect location accuracy rate.
Further, the method includes the first position according to determining one or more of defects, optics is utilized
Microscopic imaging device carries out optical microscopy imaging at least one defect in one or more of defects in situ, without
Chip is transferred to other systems to be corrected with the position to defect in chip, thus the defect location side of the embodiment of the present invention
Method passes through the technological means corrected in situ and further improves the efficiency of wafer defect position detection, is conducive to improve handling capacity.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (20)
1. a kind of defect positioning system characterized by comprising
First defect location module, for emitting detection light beam to wafer surface and institute being scattered and/or reflected according to the chip
The optical signal that detection light beam is formed is stated to determine in the chip with the presence or absence of one or more present in defect and the chip
The first position of a defect；And
Second defect location module, the of one or more of defects for being determined according to the first defect location module
One position, in one or more of defects at least one defect carry out micro-imaging, and according to it is described at least one lack
Sunken micro-imaging result is corrected the first position of one or more of defects, obtains one or more of defects
The second position.
2. defect positioning system as described in claim 1, which is characterized in that the second defect location module is used for according to institute
The first position for stating one or more of defects that the first defect location module determines, in one or more of defects
At least one defect carries out optical microscopy imaging in situ.
3. defect positioning system as described in claim 1, which is characterized in that the second defect location module according to it is described extremely
The micro-imaging result of a few defect, which is corrected the first position of one or more of defects, includes:
The second defect location module according to the micro-imaging result of at least one defect control the afer rotates or
Translation, and according to the rotation angle or translational movement of the chip, the first position of one or more of defects is corrected.
4. defect positioning system as described in claim 1, which is characterized in that the first defect location module includes:
Light source, for emitting the detection light beam towards the wafer surface；
Detector indicates institute for detecting the chip scattering and/or reflecting the optical signal of the detection light beam formation and generate
State the output signal of optical signal；And
First processing unit, for being determined in the chip according to the output signal of the detector with the presence or absence of defect and
The first position of one or more defect present in the chip.
5. defect positioning system as described in claim 1, which is characterized in that the second defect location module includes:
Optical micro imaging device, the of one or more of defects for being determined according to the first defect location module
One position carries out micro-imaging at least one defect in one or more of defects；And
Second processing device, the micro-imaging result at least one defect according to is to one or more of defects
First position is corrected, and obtains the second position of one or more of defects.
6. defect positioning system as claimed in claim 5, which is characterized in that the optical micro imaging device includes that optics is aobvious
Micro mirror.
7. defect positioning system as claimed in claim 5, which is characterized in that the second processing device is also used to:
According to the first position of determining one or more of defects, controls the chip and make the first rotary motion and/or the
One translational motion is located at the first position of at least one defect in the visual field of the optical micro imaging device.
8. defect positioning system as claimed in claim 7, which is characterized in that the second processing device is also used to:
When in the visual field that the first position of at least one defect is located at the optical micro imaging device and described at least one
When a defect is not present in the visual field of the optical micro imaging device, control the chip make the second rotary motion and/or
Second translational motion, so that at least one described defect is located in the visual field of the optical micro imaging device；And
Make the rotation angle of second rotary motion according to the chip and/or makees the position that second translational motion generates
It moves, the first position of one or more of defects is corrected, the second position of one or more of defects is obtained.
9. defect positioning system as claimed in claim 7, which is characterized in that further include: chip motion-control module, the crystalline substance
Piece motion-control module makees described first based on the first instruction received from the second processing device to control the chip
Rotary motion and/or first translational motion.
10. defect positioning system as claimed in claim 8, which is characterized in that further include: chip motion-control module, it is described
Chip motion-control module makees described the based on the second instruction received from the second processing device to control the chip
Two rotary motions and/or second translational motion.
11. defect positioning system as claimed in claim 4, which is characterized in that further include: chip motion-control module, it is described
Chip motion-control module is instructed based on the third received from first processing unit makees third rotation to control the chip
Transhipment is moved and/or third translational motion, so that the detection light beam is scanned the wafer surface.
12. such as the described in any item defect positioning systems of claim 9 to 11, which is characterized in that the chip motion control mould
Block includes motion controller, and the chip motion-control module further includes rotation microscope carrier and/or translation microscope carrier；
The motion controller is used for: controlling the afer rotates by controlling the rotation microscope carrier, and/or by described in control
It translates microscope carrier and controls the chip translation.
13. defect positioning system as claimed in claim 4, which is characterized in that the detector includes:
First photodetector, for receiving the chip scattering within the scope of the first space angle and/or reflecting the detection
The first optical signal that light beam is formed, and generate the first output signal for indicating first optical signal；And
Second photodetector, for receiving the chip scattering in second space angular range and/or reflecting the detection
The second optical signal that light beam is formed, and generate the second output signal for indicating second optical signal；
First processing unit is used to be determined according to the relative size of first output signal and second output signal
With the presence or absence of the first position of one or more defect present in defect and the chip in the chip.
14. a kind of defect positioning method characterized by comprising
Emit detection light beam to wafer surface；
It is scattered according to the chip and/or reflects the optical signal that the detection light beam is formed and determined in the chip with the presence or absence of scarce
The first position of one or more defect present in the sunken and described chip；
According to the first position of determining one or more of defects, at least one of one or more of defects are lacked
It is trapped into row micro-imaging；And
The first position of one or more of defects is corrected according to the micro-imaging result of at least one defect,
Obtain the second position of one or more of defects.
15. defect positioning method as claimed in claim 14, which is characterized in that according to determining one or more of defects
First position, in one or more of defects at least one defect carry out micro-imaging include:
According to the first position of determining one or more of defects, using optical micro imaging device to one or more
At least one defect in a defect carries out optical microscopy imaging in situ.
16. defect positioning method as claimed in claim 14, which is characterized in that according at least one defect it is micro- at
Include: as first position of the result to one or more defects in the chip is corrected
The afer rotates or translation are controlled according to the micro-imaging result of at least one defect, and according to the chip
Angle or translational movement are rotated, the first position of one or more of defects is corrected.
17. defect positioning method as claimed in claim 15, which is characterized in that according to determining one or more of defects
First position, at least one defect in one or more of defects is carried out in situ using optical micro imaging device
Optical microscopy imaging includes:
According to the first position of determining one or more of defects, controls the chip and make the first rotary motion and/or the
One translational motion is located at the first position of at least one defect in the visual field of the optical micro imaging device.
18. defect positioning method as claimed in claim 17, which is characterized in that according at least one defect it is micro- at
Include: as first position of the result to one or more of defects is corrected
When in the visual field that the first position of at least one defect is located at the optical micro imaging device and described at least one
When a defect is not present in the visual field of the optical micro imaging device, control the chip make the second rotary motion and/or
Second translational motion, so that at least one described defect is located in the visual field of the optical micro imaging device；And
Make the rotation angle of second rotary motion according to the chip and/or makees the position that second translational motion generates
It moves, the first position of one or more of defects is corrected, the second position of one or more of defects is obtained.
19. defect positioning method as claimed in claim 14, which is characterized in that emitting detection light beam to the wafer surface
During, the method also includes: it controls the chip and makees third rotary motion and/or third translational motion, so that described
Detection light beam is scanned the wafer surface.
20. defect positioning method as claimed in claim 14, which is characterized in that institute is scattered and/or reflected according to the chip
It states the optical signal that detection light beam is formed and determines that the first position of one or more defect present in the chip includes:
The chip scattering is received within the scope of the first space angle and/or reflects the first light letter that the detection light beam is formed
Number, and generate the first output signal for indicating first optical signal；
The chip scattering is received in second space angular range and/or reflects the second light letter that the detection light beam is formed
Number, and generate the second output signal for indicating second optical signal；And
It is determined in the chip according to the relative size of first output signal and second output signal with the presence or absence of scarce
The first position of one or more defect present in the sunken and described chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910460972.1A CN110132995A (en) | 2019-05-29 | 2019-05-29 | Defect positioning system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910460972.1A CN110132995A (en) | 2019-05-29 | 2019-05-29 | Defect positioning system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110132995A true CN110132995A (en) | 2019-08-16 |
Family
ID=67582856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910460972.1A Pending CN110132995A (en) | 2019-05-29 | 2019-05-29 | Defect positioning system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110132995A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110907468A (en) * | 2019-12-09 | 2020-03-24 | 上海精测半导体技术有限公司 | Surface detection device and method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828736A (en) * | 2005-02-28 | 2006-09-06 | 富士通株式会社 | Recording and reproducing device |
| CN101251496A (en) * | 2007-02-19 | 2008-08-27 | 奥林巴斯株式会社 | Defect detection device and defect detection method |
| CN101443653A (en) * | 2006-05-09 | 2009-05-27 | 株式会社尼康 | Edge inspection apparatus |
| CN102435629A (en) * | 2011-11-28 | 2012-05-02 | 上海华力微电子有限公司 | Detection method of scanning electron microscope |
| US20150055128A1 (en) * | 2011-03-10 | 2015-02-26 | Kla-Tencor Corporation | Surface Scanning Inspection System With Independently Adjustable Scan Pitch |
| CN106463431A (en) * | 2014-05-17 | 2017-02-22 | 科磊股份有限公司 | Wafer edge detection and inspection |
| CN107004038A (en) * | 2014-12-31 | 2017-08-01 | 科磊股份有限公司 | Inspection is registered to design using built-in target |
-
2019
- 2019-05-29 CN CN201910460972.1A patent/CN110132995A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828736A (en) * | 2005-02-28 | 2006-09-06 | 富士通株式会社 | Recording and reproducing device |
| CN101443653A (en) * | 2006-05-09 | 2009-05-27 | 株式会社尼康 | Edge inspection apparatus |
| CN101251496A (en) * | 2007-02-19 | 2008-08-27 | 奥林巴斯株式会社 | Defect detection device and defect detection method |
| US20150055128A1 (en) * | 2011-03-10 | 2015-02-26 | Kla-Tencor Corporation | Surface Scanning Inspection System With Independently Adjustable Scan Pitch |
| CN102435629A (en) * | 2011-11-28 | 2012-05-02 | 上海华力微电子有限公司 | Detection method of scanning electron microscope |
| CN106463431A (en) * | 2014-05-17 | 2017-02-22 | 科磊股份有限公司 | Wafer edge detection and inspection |
| CN107004038A (en) * | 2014-12-31 | 2017-08-01 | 科磊股份有限公司 | Inspection is registered to design using built-in target |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110907468A (en) * | 2019-12-09 | 2020-03-24 | 上海精测半导体技术有限公司 | Surface detection device and method |
| CN110907468B (en) * | 2019-12-09 | 2021-07-30 | 上海精测半导体技术有限公司 | Surface detection device and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5672240B2 (en) | System and method for inspecting a wafer | |
| TWI575626B (en) | System and method for inspecting a wafer (4) | |
| TWI551855B (en) | System and method for inspecting a wafer and a program storage device readble by the system | |
| JP5123932B2 (en) | Camera-equipped 6-degree-of-freedom target measurement device and target tracking device with a rotating mirror | |
| CN106463431B (en) | Wafer edge inspection method and checking system | |
| JP5127820B2 (en) | Camera-based target coordinate measurement method | |
| EP0979386B1 (en) | Method and system for measuring object features | |
| US7289215B2 (en) | Image control in a metrology/inspection positioning system | |
| JP3511450B2 (en) | Position calibration method for optical measuring device | |
| TWI558996B (en) | System and method for capturing illumination reflected in multiple directions | |
| JP2017538117A (en) | Apparatus, method and computer program product for workpiece defect detection | |
| TWI445919B (en) | System of 2d code detection and thickness measurement for glass substrate, and method of the same | |
| KR20020049039A (en) | Alignment apparatus | |
| CN102778460A (en) | Method for detecting internal flaw of substrate | |
| CN109935531B (en) | Surface detection device, system and method | |
| CN113739696B (en) | Coordinate measuring machine with vision probe for performing point self-focusing type measuring operation | |
| CN107796718A (en) | Brineling system and method | |
| CN111239164A (en) | Defect detection device and method thereof | |
| CN110132995A (en) | Defect positioning system and method | |
| CN103411561B (en) | Based on the image microstructures method of angular spectrum scanning illumination | |
| KR20010101041A (en) | Measuring instrument | |
| CN210720179U (en) | Rechecking camera focusing and ranging device and glass rechecking equipment | |
| CN108139205A (en) | Optical element characteristic detecting apparatus | |
| WO2019180899A1 (en) | Appearance inspection device | |
| CN208026651U (en) | Plate of material shape defect detecting system based on multichannel light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190816 |
|
| WD01 | Invention patent application deemed withdrawn after publication |