CN102435629A - Detection method of scanning electron microscope - Google Patents
Detection method of scanning electron microscope Download PDFInfo
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- CN102435629A CN102435629A CN2011103860909A CN201110386090A CN102435629A CN 102435629 A CN102435629 A CN 102435629A CN 2011103860909 A CN2011103860909 A CN 2011103860909A CN 201110386090 A CN201110386090 A CN 201110386090A CN 102435629 A CN102435629 A CN 102435629A
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Abstract
The invention relates to a detection method of a scanning electron microscope. The detection method can be used for detecting the defect of a wafer provided with a plurality of chips, and comprises the steps of: importing a file of the wafer with a defect; putting the wafer to be detected on an objective table of the scanning electron microscope; setting a corner of a certain chip arranged on the wafer to be detected as an initial position; correcting the position of the wafer to be detected; obtaining the offset value of the levels of the wafers arranged at the central parts of cavities of two machine types; selecting the chip to be detected, and correcting the coordinate of the corner of the chip in a defect scanning machine according to the offset value of the levels of the wafers; leading the corner of the chip to be moved to the center of the image of a display device in a state of amplifying the image, and obtaining the offset value of the levels of the chips arranged at the central parts of the cavities of the two machine types; obtaining the corrected coordinate of the defect based on the offset value of the levels of the wafers and the offset value of the levels of the chips; and according to the corrected coordinate of the defect, leading the defect to be detected to be positioned under an electron gun of the defect scanning machine, and therefore, the feature of the defect can be rapidly and accurately caught.
Description
Technical field
The present invention relates to a kind of detection method of scanning electron microscope, relate in particular to a kind of detection method of wafer being carried out the scanning electron microscope of fast detecting.
Background technology
In the manufacture process of semiconductor devices, the detection of wafer is very important to the quality that guarantees product.Defective through detecting wafer is also analyzed, and can find the reason that produces defective, thereby realize the raising of yield rate and the steady running of production line.
At present, using scanning electron microscope that wafer is carried out defect inspection is a kind of method comparatively commonly used.Below just carry out brief description to the basic structure of scanning electron microscope in the prior art.
Referring to Fig. 1, Fig. 1 is the synoptic diagram of the primary structure of existing scanning electron microscope.As shown in Figure 1, scanning electron microscope mainly comprises display, lens barrel 10, is positioned at the electron gun 20 of lens barrel 10, is positioned at lens barrel 10 and is positioned at the Inlens detector 30 of electron gun 20 belows and is positioned at lens barrel 10 outer outer locator 40, main chamber 50, is positioned at the board 60 of main chamber 50 and controls the operating control that the plummer 70 on this board 60 moves.Its principle of work is: through the incident electron of a branch of high energy of electron gun 20 emission, the surface of the material that on the plummer 70 of board 60, carried through the electromagnetic lens effect of incident electron focuses on then.At this moment; Near the material surface that electron beam focused on excitation area will produce secondary electron, Auger electron, characteristic x ray and continuous spectrum X ray, backscattered electron, transmitted electron; And the electromagnetic radiation that produces in visible, ultraviolet, infrared light region, or the like.Various particles that above excitation area produced and ray are received by Inlens detector and outer locator, and are reflected on the display of scanning electron microscope.By and large, utilize the interaction of electronics and material, can obtain the various physics of sample itself, the information of chemical property, like pattern, composition, crystal structure, electronic structure and internal electric field or magnetic field or the like.
Current; The detection method of utilizing scanning electron microscope that adopts in the industry is; The file of the defective wafer that the defective scanning machine is drawn imports this scanning electron microscope, this defective wafer is put in the main chamber 50 of scanning electron microscope and is positioned on the plummer 70 of board 60, makes the corner location of the some chips in the wafer be set at reference position; Carry out position correction then, make that the X axle in the image coordinate system of electron microscope is parallel with the adjacent both sides of chip respectively with the Y axle.Afterwards, choose image coordinate (xn, yn) (wherein n be the numbering of defective) and defective scanning machine (that is a kind of defect checking machine platform of specialty of 3 to 4 defectives in scanning electron microscope; It can detect the defective on the wafer and the coordinate of defective write in the file) (an bn) compares analysis, and for example vector calculates for the coordinate that draws; And then draw the deviate (X of two kinds of type cavity centers; Y)=(xn, yn)-(an, bn).When scanning electron microscope need be carried out the pointwise detection to defective; With this deviate (X; Y) image coordinate of defective in scanning electron microscope revised; Use revised defect coordinate defective to be moved to the electron gun below, then through repeatedly relatively locking the final position of defective and taking pictures between two parties with the image of next door chip through the plummer 70 of handling board 60.
When using this existing method to carry out the defects detection of wafer; Because deviate is through drawing at the enterprising line operate of other scan image of wafer scale; So this method correction is the deviation of (wafer rank) in a big way, its degree of accuracy is lower, is difficult to capture defective through one-time detection; Usually need relatively could confirm the accurate position of defective through in big relatively scope, carrying out image; Thereby accomplish final detection, such detection can expend the more time, influences the production capacity of board.
And along with the development of integrated circuit technology; The size of chip is more and more littler; Flaw size on the wafer is also more and more littler thereupon; This can be confirmed that its pattern brings increasing difficulty with scanning electron microscope, and existing above-mentioned detection method in fact has been difficult to satisfy the requirement of actual production to precision.Because the defects count on the wafer is concerning its quality of production; Therefore detection and the observation to defective becomes most important; In addition; Wafer size can be done bigger and bigger, needs the defects count of inspection to get more and more on the wafer, and conventional detection also is difficult to satisfy the requirement of actual production to detection speed.For this reason, improve efficient and the precision of monitoring and discern critical defect and the production run of integral body has been produced substantial influence.
Therefore, it is very necessary seeking a kind of scanning detection method of defective fast, accurately so that improve the accuracy of detection and the efficient of wafer defect.
Summary of the invention
The object of the present invention is to provide a kind of high precision and the detection method of scanning electron microscope fast; Can find the position of defective accurately and rapidly through this method; Can dispense in the existing method through repeatedly relatively locking the final position of defective and numerous and diverse step of taking pictures between two parties with the image of next door chip; Can be good at solving seizure, thereby can improve the output of board greatly atomic little defective.
For this reason, the present invention provides a kind of detection method of scanning electron microscope, is used for the wafer that has a plurality of chips on it is carried out defects detection, and this method may further comprise the steps:
Step 1: the file of the defective wafer that the defective scanning machine is drawn imports this scanning electron microscope;
Step 2: wafer to be measured is positioned on the plummer of this scanning electron microscope;
Step 3: a certain chip turning on the wafer to be measured is set at reference position;
Step 4: through controlling this plummer, make this reference position be positioned at this scanning electron microscope display picture centre and this wafer to be measured carried out position correction;
Step 5: the coordinate that utilizes a plurality of defectives in the image coordinate of the display of this scanning electron microscope and this defective scanning machine, to draw compares analysis, obtains other deviate of wafer scale of two kinds of type cavity centers;
Step 6: select a chip to be measured; The coordinate that utilizes the chip turning of other this chip to be measured of deviate correction of said wafer scale in this defective scanning machine, to draw; Under the state of enlarged image, make the chip turning of this chip to be measured move to the picture centre of this display then, and then obtain the deviate of the chip level of two kinds of type cavity centers;
Step 7: the deviate based on other deviate of this wafer scale and this chip level is revised defective to be measured, obtains revised defect coordinate;
Step 8: according to this revised defect coordinate, control this plummer, make this defective to be measured be positioned at the electron gun below of this defective scanning machine, and catch the pattern of this defective to be measured through this electron gun.
Preferably, in said step 7, said defective to be measured is the defective on the said chip to be measured.
Preferably, said detection method also comprises step 9: carry out said step 6 repeatedly to step 8, and all to be detected until all chips to be measured.
Preferably, said chip turning is defined as the geometric center of formed cruciform voids part between the chip.
Preferably, in said step 4, this reference position is carried out the position correction of horizontal direction and vertical direction, make that the X axle in the image coordinate system of this electron microscope is parallel with the adjacent both sides of chip respectively with the Y axle through controlling this plummer.
Preferably, in said step 5, the quantity of said a plurality of defectives is 3 or 4.
Preferably, in said step 5, the coordinate that draws through image coordinate and defective scanning machine to scanning electron microscope carries out vector calculus, obtains other deviate of wafer scale of two kinds of type cavity centers.
Preferably, in said step 6,, find this chip to be measured, make the chip turning of this chip to be measured be positioned at the picture centre of this display afterwards again through moving this plummer and being carried on the wafer to be measured on this plummer.
Preferably, in said step 7, the vector calculus through space coordinates obtains revised defect coordinate.
Preferably, in said step 8, catch the pattern of this defective of not taken pictures through taking pictures.
The present invention has following beneficial effect: through detection method of the present invention, can catch the pattern of individual defect in the wafer fast, accurately, can realize the spot check to defective on the wafer within a short period of time, improve the work efficiency of scanning electron microscope.
Description of drawings
For enabling further to understand characteristic of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing, yet accompanying drawing only provide reference and the explanation usefulness, be not to be used for the present invention is limited.
Fig. 1 is the synoptic diagram of the primary structure of existing scanning electron microscope;
Fig. 2 is the definition synoptic diagram at chip turning;
Fig. 3 is according to the method for the invention after setting reference position, the synoptic diagram of the state before level and the vertical direction offset correction;
Fig. 4 is according to the method for the invention after setting reference position, the synoptic diagram of the state after level and the vertical direction offset correction;
Fig. 5 is the chip turning synoptic diagram not placed in the middle of chip to be measured;
Fig. 6 is the chip turning synoptic diagram placed in the middle that makes chip to be measured according to the method for the invention; And
Fig. 7 is the schematic flow sheet that carries out defective spot check according to the method for the invention.
Embodiment
In order to further specify principle of the present invention and structure, combine accompanying drawing to a preferred embodiment of the present invention will be described in detail, yet said embodiment is merely the usefulness that furnishes an explanation and explain at present, can not be used for limiting scope of patent protection of the present invention.
Following elder generation carries out brief description to an embodiment of method of the present invention.With reference to figure 7, the defective spot check schematic flow sheet that it is depicted as according to the method for the invention to be carried out, and big volume description a specific embodiment according to the method for the invention.In the detection method according to scanning electron microscope of the present invention, at first, the file of the defective wafer that the defective scanning machine is drawn imports scanning electron microscope (step S100); Then, wafer to be measured is positioned over (step S200) on the plummer 70; Afterwards, a certain chip turning on the wafer 80 to be measured is set at reference position (step S300); Then, through controlling this plummer 70, make this reference position be positioned at this scanning electron microscope display picture centre and this wafer 80 to be measured carried out position correction (step S400); Utilize a plurality of defectives to be detected to compare analysis, obtain other deviate of wafer scale (step S500) of two kinds of type cavity centers at the coordinate that the image coordinate and the defective scanning machine of the display of scanning electron microscope draws; Then, select a chip to be measured, the coordinate that utilizes the defective scanning machine at other its chip turning of deviate correction of wafer scale to draw under the state that amplifies, moves on to the display image center with its chip turning, obtains the deviate (step S600) of chip level; Obtain the defect coordinate (step S700) after the defect correction to be measured based on the deviate of other deviate of wafer scale and chip level; Subsequently; According to this revised defect coordinate; Move this plummer 70 and be carried on the wafer to be measured 80 on this plummer 70, make this defective to be measured be positioned at electron gun 20 belows of this defective scanning machine, and catch the pattern (step S800) of this defective to be measured through this electron gun 20.
Generally, method of the present invention is to being positioned over wafer to be measured 80 on the plummer 70 when carrying out defects detection, and other revises the correction deviation of introducing chip level on the basis of deviation in the wafer scale of board 60.Utilize the deviate of these two different stages accurately to revise the position of the defective on wafer 80, thereby obtain the accurate coordinate of defective in electron microscope, so that this defective moved to accurately the below of electron gun 20.Can find out the pattern that defective is also caught (for example through the acquisition of taking pictures) this defective fast through revised coordinate, avoid under the situation of having only other correction deviation of wafer scale, need repeatedly contrasting the cumbersome procedure that to confirm defective locations with the picture of next door chip.Below will set forth method of the present invention with concrete embodiment is how to carry out practical operation.
Embodiment 1
Please refer to Fig. 2 and while with reference to figure 7.Fig. 2 is the definition synoptic diagram at chip turning.In Fig. 2, show the gap of chip 1 to " ten " font that forms between a part of and these four chips of four chips such as chip 4 84 grades.In the present embodiment, the geometric center (infall) of the gap of this " ten " font is defined as " the chip turning " described in the present invention.In wafer, can both form a chip turning between any four adjacent chips.Because the size of single chip is very small often with respect to the size of wafer,, to choose the reference position of the position at some chips turning earlier as defects detection so consider for convenience and the accuracy of choosing reference position.
But need to prove that " chip turning " also may be selected to be certain bight of single chip, it does not have specific restriction in the present invention.
Please refer to Fig. 3 and Fig. 4 and while with reference to figure 7.Fig. 3 and Fig. 4 set after the reference position, the synoptic diagram of before level and the vertical direction offset correction and correction back state.In Fig. 3 and Fig. 4, be illustrated schematically in the chip of neatly arranging that circular wafer 80 is provided with many bulks; And two orthogonal straight lines that have arrow are represented display institute images displayed coordinate system and coordinate system center (picture centre) thereof of scanning electron microscope.Fig. 3 shows after a certain chip turning on the wafer to be measured is set at reference position, through suitably moving plummer 70, makes this chip turning be positioned at the state of the picture centre of scanning electron microscope.Afterwards, through suitably rotating plummer 70, make that X axle, the Y axle in the image coordinate system of display is parallel, as shown in Figure 4 with two of chip adjacent limits respectively.
Then, on wafer, choose a plurality of defective Kn (wherein n is the numbering of defective), the coordinate representation of defective Kn in scanning electron microscope be (xn, yn), the scanning coordinate that obtains through the defective scanning machine be expressed as (an, bn).Preferably, choose 3-4 defective, but the quantity of defective is not as limit.
Present embodiment will be that example is explained method of the present invention to choose three defective K1, K2, K3.After wafer 80 as shown in Figure 4 having good positioning, transfer through the defective scanning machine get access to they the scanning coordinate data (a1, b1), (a2; B2), (a3; B3), and in the display of scanning electron microscope, obtain defective K1, K2, K3 image coordinate (x1, y1), (x2; Y2), (x3, y3).The image coordinate and the scanning coordinate of above-mentioned each defective are carried out vector calculus, for example vector subtract computing (x1-a1, y1-b1), (x2-a2, y2-b2), (x3-a3; Y3-b3), with the deviate that obtains each defective, then the deviate that obtains is averaged; Promptly [(x1-a1, y1-b1)+(x2-a2, y2-b2)+(x3-a3; Y3-b3)]/3, thus obtain two kinds of type cavity centers the mean deviation value (X, Y).(X Y) is other deviate of wafer scale to this deviate.
Please refer to Fig. 5 and Fig. 6 and while with reference to figure 7.Fig. 5 is the chip turning synoptic diagram not placed in the middle of chip to be measured; And Fig. 6 is the synoptic diagram after making the chip turning of chip to be measured placed in the middle according to the method for the invention.In Fig. 5 and Fig. 6, orthogonal two dotted lines are represented the center (that is the position on the wafer aimed at of electron gun) of the display of scanning electron microscope.Obtain other deviate of wafer scale (X, Y) after, the chip C4 at any defective K4 to be measured in the selected wafer in the defective to be detected (the K4 here can be other any defective on above-mentioned K1, K2, K3 one of them or the wafer 80) place.Transfer then the coordinate that the defective scanning machine at the chip turning of this chip C4 draws (c4, d4), utilize the coordinate that the defective scanning machine at the chip turning of other this chip of deviate correction of the resulting wafer scale of above-mentioned steps C4 draws (c4, d4).In scanning electron microscope, import this then and revise coordinate afterwards; And enlarged image to chip level (can see the amplification rank of defective in chip and the chip clearly); The image of this moment is as shown in Figure 5; Can see that because still there is deviation in the correction coordinate at the chip turning of the revised chip C4 of process other deviate of wafer scale, so the chip turning of chip C4 is not positioned at picture centre or display centre.Again through handling this plummer 70; Chip turning (being positioned at display centre) placed in the middle with defective K4 place chip C4; The distance that this chip C4 is moved in microscopical display in process placed in the middle (Z4, W4) be chip level the correction deviate (this displacement can through coordinate in the display of chip turning after placed in the middle of chip C4 and coordinate in the preceding display placed in the middle carry out vector subtract each other obtain).
Obtaining wafer scale correction deviate (X else; Y) and the correction deviate of chip level (Z4, W4) afterwards, the coordinate (an that the scanning machine of any defective Kn to be measured in the available wafer obtains; Bn) carry out vector calculus with above two correction deviates; For example vector adds computing promptly (an+X+Z4 bn+Y+W4) obtains the correction coordinate (an ', bn ') of this defective.
Need to prove at this; It also can be to make the coordinate of coordinate that above-mentioned each defective scanning machine draws and scanning electron microscope carry out vector to subtract computing (an-xn that the vector that obtains the wafer scale deviation subtracts computing; Bn-yn), to obtain other deviate of wafer scale (X ', Y '); Itself and the deviate that obtains before (X, Y) negative each other; And the vector that obtains the chip-scale deviation subtracts the scanning electron microscope coordinate of computing before also can be with the chip turning of chip C4 placed in the middle and deduct the scanning electron microscope coordinate after placed in the middle, with the deviate that obtains chip level (Z4 ', W4 '); Its with the deviate that obtains before (Z4, W4) negative each other, so; (an bn) just can carry out such vector calculus with above two correction deviates to the coordinate that the defective scanning machine of defective Kn draws, and for example vector subtracts computing; Promptly (an-X '-Z4; Bn-Y '-W4), thus the correction coordinate (an ', bn ') of this defective also can be obtained.
At last; Input correction coordinate in scanning electron microscope (an ', bn '), can find defective Kn also directly this defective Kn to be moved to accurately the below of electron gun 20 quickly and accurately; Carry out for example point by point scanning and take pictures, thereby can capture the pattern of this defective Kn accurately.Each defective on the wafer is revised the back and carried out point by point scanning and take pictures, like this defect inspection of this wafer has just been accomplished.
Embodiment 2
The major part of present embodiment is identical with embodiment 1, below only describes with regard to the part that is different from embodiment 1.After obtaining the deviate of chip level, utilize this deviate and other deviate of above-mentioned wafer scale, the coordinate that the defective scanning machine of all defect on the chip C4 draws is revised, and carried out point by point scanning and take pictures.Choose another chip C5 afterwards; Obtain the deviate (Z5 of the chip level of chip C5 once more with the method described in the embodiment 1; W5), the coordinate that and then as stated above the defective scanning machine of all defect on the chip C5 is drawn is revised, point by point scanning and taking pictures.By that analogy; Each chip Cn is obtained other deviate of relevant chip level (Zn; Wn), and revise the defective in this chip with other deviate of wafer scale, repeat all defect of above method on all chips of wafer and all check and finish with this deviate.
Embodiment 3.
Different with embodiment 2 is; In order to improve detection efficiency; Can after the deviate of the chip level that obtains other deviate of wafer scale and a selected chip, the coordinate that all defect on the wafer to be measured draws in the defective scanning machine be revised, and picture catching.
Though enumerated with reference to exemplary embodiments and described the utility model, should be appreciated that used term is explanation and exemplary, and non-limiting term.Because the utility model practical implementation and do not break away from the spirit and the essence of utility model in a variety of forms; So be to be understood that; The foregoing description is not limited to any aforesaid details; And should in enclose spirit that claim limited and scope, explain widely, therefore fall into whole variations and modification in claim or its equivalent scope and all should be the claim of enclosing and contain.
Claims (10)
1. the detection method of a scanning electron microscope is used for the wafer that has a plurality of chips on it is carried out defects detection, and this method may further comprise the steps:
Step 1: the file of the defective wafer that the defective scanning machine is drawn imports this scanning electron microscope;
Step 2: wafer to be measured is positioned on the plummer of this scanning electron microscope;
Step 3: a certain chip turning on the wafer to be measured is set at reference position;
Step 4: through controlling this plummer, make this reference position be positioned at this scanning electron microscope display picture centre and this wafer to be measured carried out position correction;
Step 5: the coordinate that utilizes a plurality of defectives in the image coordinate of the display of this scanning electron microscope and this defective scanning machine, to draw compares analysis, obtains other deviate of wafer scale of two kinds of type cavity centers;
Step 6: select a chip to be measured; The coordinate that utilizes the chip turning of other this chip to be measured of deviate correction of said wafer scale in this defective scanning machine, to draw; Under the state of enlarged image, make the chip turning of this chip to be measured move to the picture centre of this display then, and then obtain the deviate of the chip level of two kinds of type cavity centers;
Step 7: the deviate based on other deviate of this wafer scale and this chip level is revised the coordinate that defective to be measured draws in scanning machine, obtains revised defect coordinate;
Step 8: according to this revised defect coordinate, control this plummer, make this defective to be measured be positioned at the electron gun below of this defective scanning machine, and catch the pattern of this defective to be measured through this electron gun.
2. detection method according to claim 1 is characterized in that, in said step 7, said defective to be measured is the defective on the said chip to be measured.
3. detection method according to claim 2 is characterized in that, said detection method also comprises step 9: carry out said step 6 repeatedly to step 8, and all to be detected until all chips to be measured.
4. according to each described detection method among the claim 1-3, it is characterized in that said chip turning is defined as the geometric center of formed cruciform voids part between the chip.
5. according to each described detection method among the claim 1-3; It is characterized in that; In said step 4; Through controlling this plummer this reference position is carried out the position correction of horizontal direction and vertical direction, make that the X axle in the image coordinate system of this electron microscope is parallel with the adjacent both sides of chip respectively with the Y axle.
6. according to each described detection method among the claim 1-3, it is characterized in that in said step 5, the quantity of said a plurality of defectives is 3 or 4.
7. according to each described detection method among the claim 1-3; It is characterized in that; In said step 5, the coordinate that draws through image coordinate and defective scanning machine to scanning electron microscope carries out vector calculus, obtains other deviate of wafer scale of two kinds of type cavity centers.
8. according to each described detection method among the claim 1-3; It is characterized in that, in said step 6, through moving this plummer and being carried on the wafer to be measured on this plummer; Find this chip to be measured, make the chip turning of this chip to be measured be positioned at the picture centre of this display afterwards again.
9. according to each described detection method among the claim 1-3, it is characterized in that in said step 7, the vector calculus through space coordinates obtains revised defect coordinate.
10. according to each described detection method among the claim 1-3, it is characterized in that, in said step 8, catch the pattern of this defective of not taken pictures through taking pictures.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001176941A (en) * | 1999-12-17 | 2001-06-29 | Seiko Epson Corp | Method for recognizing wafer coordinate of automatic defect detector |
| US20020047098A1 (en) * | 2000-10-18 | 2002-04-25 | Applied Materials, Inc. | Substrate defect inspection method and substrate defect inspection system |
| KR20020058309A (en) * | 2000-12-29 | 2002-07-12 | 박종섭 | Method for observing the wafer defect of forming nor pattern |
| TW200732650A (en) * | 2006-02-07 | 2007-09-01 | Hantech Co Ltd | Apparatus and method for detecting defects in wafer using line sensor camera |
| CN101378024A (en) * | 2007-08-31 | 2009-03-04 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting wafer defect |
| CN102023161A (en) * | 2009-09-09 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Method for acquiring defect image |
| CN102087985A (en) * | 2009-12-03 | 2011-06-08 | 无锡华润上华半导体有限公司 | Wafer defect detecting method |
| CN102121907A (en) * | 2010-01-08 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Automatic wafer defect detection method and system |
-
2011
- 2011-11-28 CN CN201110386090.9A patent/CN102435629B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001176941A (en) * | 1999-12-17 | 2001-06-29 | Seiko Epson Corp | Method for recognizing wafer coordinate of automatic defect detector |
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