CN110132561A - A kind of blade stress towards extreme environment/strain dynamic test method - Google Patents
A kind of blade stress towards extreme environment/strain dynamic test method Download PDFInfo
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- CN110132561A CN110132561A CN201910404487.2A CN201910404487A CN110132561A CN 110132561 A CN110132561 A CN 110132561A CN 201910404487 A CN201910404487 A CN 201910404487A CN 110132561 A CN110132561 A CN 110132561A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/22—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in capacitance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M13/00—Testing of machine parts
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Abstract
The blade stress towards extreme environment/strain dynamic test method that the invention discloses a kind of includes the following steps: S1, sputters high temperature resistant sensitive chip film and high temperature resistant reading antenna film respectively in aero-engine/thermal power generation gas turbine blade and case surface using magnetron sputtering technique;S2, by the both ends of high temperature resistant reading antenna film with integrate power supply unit, data-reading unit and be connected with the back end processing module of data storage cell;S3, when blade high speed rotational operation, the interdigital capacitor in high temperature resistant sensitive chip film changes because perceiving vane stress deformation, leads to the resonance frequency f in the circuit LC0It changes, resonance frequency f0By wirelessly non-contactly in a manner of be transferred in back end processing module, through data-reading unit analysis processing can be realized to rotating vane surface stress/strain parameter real-time testing.The present invention may be implemented rotating vane surface stress/strain parameter dynamic under adverse circumstances and measure.
Description
Technical field
The present invention relates to stress-strain test technical fields, and in particular to a kind of blade stress towards extreme environment/answer
Become dynamic testing method.
Background technique
For civil engine and thermal power generation gas turbine, inner vanes are in extremely in the operating condition
Rugged environment (such as high temperature, Gao Xuan, Qiang Zhen, impact, corrosion), and the reliably working service life of blade is civil engine
With a key technical index of thermal power generation gas turbine performance quality, therefore, to blade surface stress under working condition/answer
The real-time detection of variable element is just particularly important.Since rotating vane is in the complexity such as high temperature, Gao Xuan, Qiang Zhen, impact, corrosion
Adverse circumstances, operating condition is extremely harsh, and traditional stress/strain sensor can not be installed on blade surface, cannot it is direct/
Realize that the real-time dynamic of blade surface stress/strain parameter is tested indirectly.Therefore, it needs to invent a kind of completely new towards extreme ring
The blade stress in border/strain dynamic test method goes to realize pivoting leaf under the adverse circumstances such as high temperature, Gao Xuan, Qiang Zhen, impact, corrosion
The measurement of piece surface stress/strain parameter dynamic.
Summary of the invention
The blade surface stress/strain test method towards extreme environment that the present invention provides a kind of, it is intended to solve background
Technology there are the problem of to realize blade surface stress/strain parameter under the adverse circumstances such as high temperature, Gao Xuan, Qiang Zhen, impact, corrosion
Real time dynamic measurement.
To achieve the above object, the technical scheme adopted by the invention is as follows:
A kind of blade stress towards extreme environment/strain dynamic test method, includes the following steps:
S1, distinguished using magnetron sputtering technique in aero-engine/thermal power generation gas turbine blade and case surface
Sputter high temperature resistant sensitive chip film and high temperature resistant reading antenna film, wherein high temperature resistant sensitive chip film and high temperature resistant are read
Antenna film is taken to realize the wireless non-contact transmission of data by the inductive coupling between middle layer;High temperature resistant sensitive chip film
Middle layer be electrical property element film, the circuit LC is composed in series by parallel interdigital capacitor and spiral inductance, spiral inductance
Outer end is directly connected with one end of interdigital capacitor, and inner end spiral is laid out to be connected with the other end of interdigital capacitor;High temperature resistant reads day
The middle layer of line is coaxial spiral inductance film;
S2, the both ends of high temperature resistant reading antenna film are stored with collection power supply unit, data-reading unit and data respectively
Unit is connected in the back end processing module of one;
S3, when blade high speed rotational operation, power supply unit in back end processing module passes through the Mutual Inductance Coupling between inductance
Energy is provided for high temperature resistant sensitive chip film, the interdigital capacitor in high temperature resistant sensitive chip film is because perceiving vane stress deformation
And change, lead to the resonance frequency f in the circuit LC0It changes, resonance frequency f0By wirelessly non-contactly in a manner of transmit
Into back end processing module, can be realized through data-reading unit analysis processing to rotating vane surface stress/strain parameter
Real-time testing.
Further, the top layer of the top layer of the high temperature resistant sensitive chip film and bottom, high temperature resistant reading antenna film
It is Al with bottom2O3Film.
Further, the material of the coaxial spiral inductance film is refractory metal Pt.
Further, the Al2O3Film is prepared by following steps:
A. unclean to prevent blade surface and make film using acetone, ethyl alcohol, deionized water successively cleaning blade surface
Adhesion reduces;
B. metal Al target is put with clean blade to corresponding target position and sample rotates platform respectively;
C. vacuumize process is carried out to coating chamber, Chamber vacuum degree to be coated reaches 1*10-3When Pa, closes vacuum meter and stop
Only it is vacuum-treated;
D. by uniformly mixed Ar and O2It is passed through vacuum coating chamber, the stopping when operating air pressure of chamber reaches 0.1Pa
It ventilates and remains stable;
E. starting shielding power supply starts to sputter, and the indoor Ar of vacuum coating chamber is ionized into Ar+And e-, and start sample rotation
Turntable is to guarantee Al2O3In blade surface homogeneous film formation;
F.Al metallic target surface is through Ar+Al particle is pounded, Al particle reacts with the indoor oxygen of vacuum coating chamber
Form Al2O3And it is mobile to blade, and the Al particle of blade surface is deposited on equally by O2It influences and forms Al2O3Film;
G. as the Al of blade surface2O3When film reaches 1 μm, shielding power supply is closed, sputtering stops, and blade stops rotating,
Al2O3Thin film sputtering terminates.
Further, the electrical property element film is as obtained by following steps preparation:
A. it is the cleannes for guaranteeing gluing process blade surface, has Al to above-mentioned sputtering first2O3Film blade surface carries out
Cleaning, dehydration, when dehydration, the box drying oven 30min at a temperature of blade is placed on 150~200 DEG C dries blade surface
Remaining solution;
B. blade is put on turntable and is stood, photoresist is dropped in Al2O3On film surface, speeding-up blade rotation makes
Photoresist is equably coated on Al2O3On film surface, after photoresist spin coating, blade is dried using box drying oven and is delustered with removing
Solvent in photoresist enhances the caking property of photoresist;
C. the pattern mask version for preparing required electrical property element places it in above the blade for being coated with photoresist one side, uses
Exposure light-illuminating 3~5s of mask, makes the figure of mask completely be transferred to blade surface;
D. using box drying oven at a temperature of 100 DEG C again drying exposure after blade with reduce exposure region with it is non-exposed
The standing wave in section reacts, and avoids the resolution ratio of the figure of electrical property element after developing impacted and keeps the photoresist of photosensitive area abundant
Reaction;
E. the blade after exposure is immersed in 5~10s in developer solution, removing photosensitive photoresist makes electrical property component pattern
It shows;
It f. is 3*10 in vacuum degree-3Pa, operating air pressure are in the coating chamber of 0.5Pa, are sputtering with refractory metal Pt
Target prepares the Pt metal film of 0.5 μ m-thick using Ar as sputter gas;
G. clear with deionized water after thering is the blade of Pt film to impregnate in the organic solution dissolved each other with photoresist sputtering
It washes, removes extra photoresist, being removed photoresist using organic solution will not be such that blade corrodes.
Further, the coaxial spiral inductance film is as obtained by following steps preparation:
A. after Pt metal target being put on sample rotates platform, vacuumize process is carried out to coating chamber, to chamber pressure 3
×10-3Stop vacuumize process when Pa;
B. Ar is slowly introducing in vacuum chamber, when the indoor air pressure of vacuum chamber reaches sputtering required air pressure 0.5Pa
Stop ventilating and remains stable;
C. after ventilating, start shielding power supply, start the Ar for sputtering, ionizing out+It moves and bombards to Pt target direction
Target, Pt particle are shelled out to shell movement, are deposited on case surface and are formed Pt film, deposit to 0.5 μm in Pt film
Power supply is closed when thick stops sputtering.
The invention has the following advantages:
Aiming at the problem that traditional stress/strain sensor exists in application process, the present invention selects magnetron sputtering technique
Sensor high temperature resistant sensitive chip film is directly sputtered at into aero-engine/thermal power generation gas turbine rotating vane table
Face, forming thin film rate height, the light weight of technique preparation, meets aero-engine/thermal power generation gas turbine moving blade pair
The high request of quality.
In electrical property element film and togetherAxis spiral inductanceThe upper and lower surface of film sputters one layer of high temperature resistant Al respectively2O3It is thin
Film, the Al of bottom surface2O3Film improves electrical property element film and metal blade, coaxial spiral inductance film and metal shell
Adhesion and both make to insulate, allow high temperature resistant sensitive chip film in work and high temperature resistant reading antenna film very
High speed rotational blade is fixedly mounted in not fall off, the Al of upper surface with case surface2O3Film makes high temperature resistant sensitive chip
High temperature when film and high temperature resistant reading antenna film are not worked by aero-engine/thermal power generation gas turbine, Gao Xuan, Qiang Zhen,
The influence of the adverse circumstances such as impact, corrosion.
High temperature resistant reading antenna is to be measured by the transmission with the electromagnetic coupling of high temperature resistant sensitive chip realization energy and signal
Signal is transferred to the back end processing module connecting with high temperature resistant reading antenna in a manner of non-contactly, may be implemented to particular surroundings
The wireless dynamic acquisition of lower rotating vane surface stress/strain parameter.
The high temperature resistant sensitive chip film quality prepared using magnetron sputtering technique is frivolous (< 0.1g), is placed in aeroplane engine
The blade surface of machine and gas turbine meets its requirement to quality.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of the blade stress towards extreme environment/strain dynamic test method of the embodiment of the present invention.
Fig. 2 is the structural schematic diagram of high temperature resistant sensitive chip film in the embodiment of the present invention.
Fig. 3 is the sectional view of high temperature resistant sensitive chip film in the embodiment of the present invention.
Fig. 4 is the structural schematic diagram of back end processing module in the embodiment of the present invention
Fig. 5 is the structural schematic diagram of the electrical property element film of high temperature resistant sensitive chip in the embodiment of the present invention.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
As shown in Figure 1, a kind of blade stress towards extreme environment/strain dynamic test method of the invention is based on resistance to height
Temperature sensitive chip thin films, high temperature resistant reading antenna film, back end processing module realize that high temperature resistant sensitive chip thin film sputtering is navigating
Empty engine/thermal power generation gas turbine rotating vane surface, high temperature resistant reading antenna thin film sputtering is in aero-engine/fire
The case surface of power electric generation gas turbine, the two are realized with wireless cordless to rotating vane surface stress/strain parameter
Dynamic measurement.The structural schematic diagram and sectional view of high temperature resistant sensitive chip film are as shown in Figures 2 and 3, and top layer is with bottom
High temperature resistant Al2O3Film, thickness are 1 μm, and middle layer is electrical property element film, with a thickness of 0.5 μm, electrical property element film
Structural schematic diagram as shown in figure 5, being composed in series the circuit LC, the outer end of spiral inductance by parallel interdigital capacitor and spiral inductance
Directly it is connected with one end of interdigital capacitor, inner end spiral is laid out to be connected with the other end of interdigital capacitor;The high temperature resistant reads day
The top layer of line and bottom with high temperature resistant sensitive chip film as, be Al2O3Film, middle layer are coaxial spiral inductance film,
Material is refractory metal Pt;The high temperature resistant reading antenna film both ends are connected with back end processing module, back end processing module
Interior power supply unit provides energy by the Mutual Inductance Coupling between inductance for high temperature resistant sensitive chip film, when blade rotary work
When, the interdigital capacitor sputtered in the high temperature resistant sensitive chip of blade surface changes because of vane stress deformation, causes quick
The resonance frequency f of sense chip0It changes, this variation can be by the way that wirelessly non-contactly mode is transferred to and high temperature resistant reading antenna
In connected sensor back end processing module, it is saved in data storage cell in real time, data-reading unit passes through to data
Data in storage unit are handled, are analyzed, and dividing in real time to the stress/strain parameter on rotating vane surface can be realized
Analysis.As shown in figure 4, the back end processing module integrates power supply unit, data-reading unit and data storage cell.
Embodiment
A kind of blade stress towards extreme environment/strain dynamic test method, includes the following steps:
S1, distinguished using magnetron sputtering technique in aero-engine/thermal power generation gas turbine blade and case surface
Sputter high temperature resistant sensitive chip film and high temperature resistant reading antenna film;
S11, high temperature resistant is sputtered in aero-engine/thermal power generation gas turbine blade surface using magnetron sputtering technique
Sensitive chip film;
S111, Al with a thickness of 1 μm is sputtered on the blade after cleaning up using magnetron sputtering technique2O3Film;
S112, using magnetron sputtering technique in the Al2O3On film, using refractory metal Pt as sputtering target material, Ar is to splash
It emanates body, prepares the electrical property element film with a thickness of 0.5 μm;
S113, Al with a thickness of 1 μm is sputtered on the electrical property element film using magnetron sputtering technique2O3Film;
S12, it is read using magnetron sputtering technique in aero-engine/thermal power generation gas turbine case surface sputtering high temperature resistant
Take antenna film;
S121, Al with a thickness of 1 μm is sputtered on the shell after cleaning up using magnetron sputtering technique2O3Film;
S122, using magnetron sputtering technique in the Al2O3On film, using refractory metal Pt as sputtering target material, Ar is to splash
It emanates body, prepares the coaxial spiral inductance film of 0.5 μ m-thick;
S123, Al with a thickness of 1 μm is sputtered on the coaxial spiral inductance film using magnetron sputtering technique2O3Film;
S2, the both ends of high temperature resistant reading antenna film are connected with back end processing module respectively;
S3, when blade high speed rotational operation, power supply unit in back end processing module passes through the Mutual Inductance Coupling between inductance
Energy is provided for high temperature resistant sensitive chip film, the interdigital capacitor in high temperature resistant sensitive chip film is because perceiving vane stress deformation
And change, lead to the resonance frequency f in the circuit LC0It changes, resonance frequency f0By wirelessly non-contactly in a manner of transmit
Into back end processing module, can be realized through data-reading unit analysis processing to rotating vane surface stress/strain parameter
Real-time testing.
In the present embodiment, the Al2O3The cardinal principle of film preparation is to pass through Ar+Bombardment metallic aluminium target obtains aluminum shot
Son, aluminum particulate and the indoor O of vacuum coating chamber2Reaction is to form Al2O3Film.Specific step of preparation process is as follows:
A. unclean to prevent blade surface and make film using acetone, ethyl alcohol, deionized water successively cleaning blade surface
Adhesion reduces;
B. metal Al target is put respectively with the blade after cleaning to fixed on corresponding target position and sample stage;
C. vacuumize process is carried out to coating chamber, vacuum condition needed for reaching plated film reaches 1*10-3When Pa, close
Vacuum meter is closed to stop being vacuum-treated;
D. uniformly mixed Ar and O are passed through to vacuum coating chamber2, Ventilation Rate is controlled to control vacuum coating chamber
Air pressure stops ventilating when operating air pressure needed for it reaches 0.1Pa and remains stable;
E. starting shielding power supply starts to sputter, and the indoor Ar of vacuum coating chamber is ionized into Ar+And e-, and start sample rotation
Turntable is to guarantee Al2O3In blade surface homogeneous film formation;
F.Al metallic target surface is through Ar+Al particle is pounded, Al particle reacts with the indoor oxygen of vacuum coating chamber
Al2O3And it is mobile to blade, and the Al particle of blade surface is deposited on equally by O2It influences and forms Al2O3Film;
G. as the Al of blade surface2O3When the thickness of film reaches 1 μm, shielding power supply is closed, sputtering stops, and blade stops
Rotation, Al2O3Thin film sputtering terminates.
In the present embodiment, the preparation process of the electrical property element film includes graphical, the Pt film of electrical property element
Preparation, it is specific the preparation method is as follows:
A. in order to guarantee the cleannes of blade surface during gluing, there is Al to sputtering first2O3The blade surface of film into
The processing such as row cleaning, dehydration, when dehydration, box drying oven 30min at a temperature of blade is placed on 150~200 DEG C or so, drying
The remaining solution of blade surface;
B. clean blade is put on turntable and is stood, be dropped in Al to photoresist2O3After film surface, speeding-up blade
Rotation makes photoresist equably be coated on Al2O3Leaf after photoresist spin coating, is dried using box drying oven in the surface of film
Piece enhances the caking property of photoresist to remove the solvent in photoresist;
C. the pattern mask version for preparing required electrical property element places it in above the blade for being coated with photoresist one side,
With exposure light-illuminating 3~5s of mask, the figure of mask is made completely to be transferred to blade surface;
D. using box drying oven at a temperature of 100 DEG C again drying exposure after blade with reduce exposure region with it is non-exposed
The standing wave in section reacts, and avoids the resolution ratio of the figure of electrical property element after developing impacted and keeps the photoresist of photosensitive area abundant
Reaction;
E. the blade after exposure is immersed in 5~10s in developer solution, removing photosensitive photoresist makes electrical property component pattern
It shows;
It f. is 3*10 in vacuum degree-3It is sputtering with refractory metal pt under conditions of Pa, chamber operating air pressure are 0.5Pa
Target, using Ar as sputter gas, to prepare the Pt metal film with a thickness of 0.5 μm;
G. there is the blade of Pt film after the organic solution (such as acetone) dissolved each other with photoresist is impregnated sputtering, use deionization
Water cleaning, removes extra photoresist, removing photoresist using organic solution will not be such that blade corrodes.
In the present embodiment, the coaxial spiral inductance film is fine and close using film forming using refractory metal Pt as sputtering target material
And the magnetron sputtering technique of light weight is prepared, specific preparation process is as follows:
D. after Pt metal target being put on sample rotates platform, vacuumize process is carried out to coating chamber, to chamber pressure 3
×10-3Stop vacuumize process when Pa;
E. Ar is slowly introducing in vacuum chamber, stops ventilating when the indoor air pressure of vacuum chamber reaches 0.5Pa and maintained
Stablize;
F. after ventilating, start shielding power supply, start the Ar for sputtering, ionizing out+Target is moved and bombards to Pt target direction,
Pt particle is shelled out to shell movement, is deposited on case surface and is formed Pt film;Sputtering process is under power supply control with perseverance
Constant speed rate carries out, and Pt film thickness to be deposited closes power supply when reaching 0.5 μm and stops sputtering.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or modify within the scope of the claims, this not shadow
Ring substantive content of the invention.In the absence of conflict, the feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (6)
1. a kind of blade stress towards extreme environment/strain dynamic test method, which comprises the steps of:
S1, it is sputtered respectively using magnetron sputtering technique in aero-engine/thermal power generation gas turbine blade and case surface
High temperature resistant sensitive chip film and high temperature resistant reading antenna film, wherein high temperature resistant sensitive chip film and high temperature resistant read day
Line film realizes the wireless non-contact transmission of data by the inductive coupling between middle layer;In high temperature resistant sensitive chip film
Interbed is electrical property element film, is composed in series the circuit LC, the outer end of spiral inductance by interdigital capacitor and spiral inductance in parallel
Directly it is connected with one end of interdigital capacitor, inner end spiral is laid out to be connected with the other end of interdigital capacitor;High temperature resistant reading antenna
Middle layer is coaxial spiral inductance film;
S2, by the both ends of high temperature resistant reading antenna film respectively with collection power supply unit, data-reading unit and data storage cell
It is connected in the back end processing module of one;
S3, when blade high speed rotational operation, power supply unit in back end processing module is resistance to by the Mutual Inductance Coupling between inductance
High temperature sensitive chip thin films provide energy, and the interdigital capacitor in high temperature resistant sensitive chip film is sent out because perceiving vane stress deformation
Changing leads to the resonance frequency f in the circuit LC0It changes, resonance frequency f0By wirelessly non-contactly in a manner of be transferred to after
It holds in processing module, can be realized through data-reading unit analysis processing real-time to rotating vane surface stress/strain parameter
Test.
2. a kind of blade stress towards extreme environment/strain dynamic test method as described in claim 1, feature exist
In the top layer and bottom, the top layer of high temperature resistant reading antenna film and bottom of the high temperature resistant sensitive chip film are Al2O3
Film, and film thickness is 1 μm.
3. a kind of blade stress towards extreme environment/strain dynamic test method as described in claim 1, feature exist
In the material of the coaxial spiral inductance film is refractory metal Pt, and film thickness is 0.5 μm.
4. a kind of blade stress towards extreme environment/strain dynamic test method as claimed in claim 2, feature exist
In the Al2O3Film is prepared by following steps:
A. unclean to prevent blade surface and make the attachment of film using acetone, ethyl alcohol, deionized water successively cleaning blade surface
Property reduce;
B. metal Al target is put with clean blade to corresponding target position and sample rotates platform respectively;
C. vacuumize process is carried out to coating chamber, the vacuum degree of chamber to be coated reaches 1*10-3When Pa, closes vacuum meter and stop
It is vacuum-treated;
D. uniformly mixed Ar and O are passed through to vacuum coating chamber2, control Ventilation Rate to control the air pressure of vacuum coating chamber,
Stop ventilating when operating air pressure reaches 0.1Pa and remains stable;
E. starting shielding power supply starts to sputter, and the indoor Ar of vacuum coating chamber is ionized into Ar+And e-, and start sample rotates platform
To guarantee Al2O3In blade surface homogeneous film formation;
F.Al metallic target surface is through Ar+Al particle is pounded, Al particle reacts to be formed with the indoor oxygen of vacuum coating chamber
Al2O3And it is mobile to blade, and the Al particle of blade surface is deposited on equally by O2It influences and forms Al2O3Film;
G. as the Al of blade surface2O3When film reaches 1 μm, shielding power supply is closed, sputtering stops, and blade stops rotating, Al2O3It is thin
Film sputtering terminates.
5. a kind of blade stress towards extreme environment/strain dynamic test method as described in claim 1, feature exist
In the electrical property element film is as obtained by following steps preparation:
A. there is Al to sputtering first2O3The blade surface of film is cleaned, dehydration is to remove blade surface spot, dehydration
When, the box drying oven 30min at a temperature of blade is placed on 150~200 DEG C dries the remaining solution of blade surface;
B. blade is statically placed on turntable, in the Al of blade2O3After dripping photoresist on film surface, rotating vane is accelerated to make
Photoresist is equably coated on Al2O3On film surface, after photoresist spin coating, blade is dried using box drying oven and is delustered with removing
Solvent in photoresist enhances the caking property of photoresist;
C. the pattern mask version for preparing required electrical property element places it in above blade, with exposure light-illuminating mask 3
~5s makes the figure of mask completely be transferred to blade surface;
D. the blade after drying exposes again at a temperature of 100 DEG C using box drying oven is to reduce between exposure region and non-exposed area
Standing wave reaction, avoid the resolution ratio of the figure of electrical property element after development impacted and keep the photoresist of photosensitive area sufficiently anti-
It answers;
E. the blade after exposure is immersed in 5~10s in developer solution, removing photosensitive photoresist shows electrical property component pattern
Out;
F. operating condition needed for magnetron sputtering technique being arranged, i.e. plated film vacuum degree are 3*10-3Pa, operating air pressure 0.5Pa,
Under this condition, Ar is sputter gas using refractory metal Pt as sputtering target material, the Pt metal film with a thickness of 0.5 μm is prepared;
G. it will sputter after thering is the blade of Pt film to impregnate in the organic solution dissolved each other with photoresist, then clean leaf with deionized water
Piece surface removes extra photoresist.
6. a kind of blade stress towards extreme environment/strain dynamic test method as described in claim 1, feature exist
In the coaxial spiral inductance film is as obtained by following steps preparation:
A. after Pt metal target being put on sample rotates platform, vacuumize process is carried out to coating chamber, to chamber pressure 3 × 10-3Stop vacuumize process when Pa;
B. Ar is slowly introducing in vacuum chamber, stops ventilation simultaneously when the indoor air pressure of vacuum chamber reaches operating air pressure 0.5Pa
It maintains to stablize;
C. after ventilating, start shielding power supply, start the Ar for sputtering, ionizing out+Target is moved and bombards to Pt target direction,
Pt particle is shelled out to shell movement, is deposited on case surface and is formed Pt film;Sputtering process is under power supply control with perseverance
Constant speed rate carries out, and power supply is closed when Pt film deposits to the thickness of requirement and stops sputtering.
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