CN110112202B - Display substrate and preparation method thereof - Google Patents
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- CN110112202B CN110112202B CN201910437896.2A CN201910437896A CN110112202B CN 110112202 B CN110112202 B CN 110112202B CN 201910437896 A CN201910437896 A CN 201910437896A CN 110112202 B CN110112202 B CN 110112202B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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Abstract
The embodiment of the invention provides a display substrate and a preparation method thereof, wherein the display substrate comprises a substrate and a plurality of pixel units arranged on the substrate, each pixel unit comprises a light emitting structure layer and a fingerprint identification structure layer, each light emitting structure layer comprises a light emitting unit and a light emitting driving circuit, each fingerprint identification structure layer comprises a fingerprint identification sensor used for forming a fingerprint electric signal, each fingerprint identification sensor comprises a piezoelectric thin film layer, each piezoelectric thin film layer is positioned between each light emitting unit and each light emitting driving circuit and covers each pixel unit, and each light emitting unit penetrates through the corresponding piezoelectric thin film layer and is connected with each light emitting driving circuit. The display substrate of the invention covers the piezoelectric film layer on the whole pixel unit, thereby not only realizing the OLED display device with the embedded fingerprint identification function, but also realizing the fingerprint identification function in the display area.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display substrate and a preparation method thereof.
Background
An Organic Light Emitting Diode (OLED) display device is a development trend of future display products, and has a series of advantages of wide viewing angle, fast response speed, high brightness, high contrast, bright color, Light weight, thin thickness, low power consumption, and the like. Currently, organic light emitting diode display devices have begun to be applied to mobile phone screens.
The ultrasonic fingerprint identification technology utilizes the ultrasonic wave to have the capacity of penetrating through materials and generate echoes with different sizes along with different materials (namely, when the ultrasonic wave reaches the surfaces of different materials, the ultrasonic energy reflected back and the distance traveled are different), so that the fingerprint identification technology is used for fingerprint identification, has better ultrasonic fingerprint identification performance compared with a capacitive fingerprint identification device, and has the advantages of water resistance, sweat resistance, large sensor area, fake fingerprint identification, thicker cover support and the like. Therefore, the ultrasonic fingerprint identification technology can distinguish the positions of fingerprint ridges and valleys by utilizing the difference of the skin and the air in the sound wave impedance, can carry out deeper analysis and sampling on the fingerprint, and can even penetrate below the surface of the skin to identify the unique three-dimensional characteristics of the fingerprint. In addition, the ultrasonic wave can also identify other physiological characteristics such as pulse, blood pressure and the like.
The present ultrasonic fingerprint identification device is prepared by a semiconductor process using a silicon wafer as a substrate, and is prepared by a low-temperature polysilicon process using glass as a substrate. However, the two fingerprint identification devices have the following problems: because the device size is little, and thickness is big, has the rigidity basement, consequently this structural style's ultrasonic fingerprint identification device can only set up on display substrate's apron with the mode of laminating, not only belongs to the outer laminating mode of display screen, can only realize the non-display area button fingerprint identification function moreover.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a display substrate and a manufacturing method thereof, so as to solve the problem that the existing display substrate can only realize the non-display area key-type fingerprint identification in an external attaching manner.
In order to solve the above technical problem, an embodiment of the present invention provides a display substrate, including a substrate and a plurality of pixel units disposed on the substrate, where each pixel unit includes a light emitting structure layer and a fingerprint identification structure layer, each light emitting structure layer includes a light emitting unit and a light emitting driving circuit, each fingerprint identification structure layer includes a fingerprint identification sensor for forming a fingerprint electrical signal, each fingerprint identification sensor includes a piezoelectric thin film layer, the piezoelectric thin film layer is located between the light emitting unit and the light emitting driving circuit and covers the pixel unit, and the light emitting unit penetrates through the piezoelectric thin film layer and is connected to the light emitting driving circuit.
Optionally, the fingerprint sensor includes an extraction electrode, the piezoelectric thin film layer formed on the extraction electrode, a driving electrode formed on the piezoelectric thin film layer, and a first cathode formed on the driving electrode, and the driving electrode penetrates through the piezoelectric thin film layer and is connected to the extraction electrode.
Optionally, the light emitting unit includes an anode formed on the piezoelectric thin film layer, a light emitting layer formed on the anode, and a second cathode formed on the light emitting layer, the anode and the driving electrode are in the same layer, and the anode penetrates through the piezoelectric thin film layer and is connected to the light emitting driving circuit.
Optionally, the fingerprint identification structure layer further includes a processing circuit, and the processing circuit is configured to receive an electrical fingerprint signal from the fingerprint identification sensor and process the electrical fingerprint signal.
Optionally, the light emission driving circuit includes:
a first active layer formed on the substrate;
a first insulating layer covering the first active layer and a first gate electrode disposed on the first insulating layer;
the second insulating layer covers the first gate electrode, and the first drain electrode and the first source electrode are arranged on the second insulating layer, the first drain electrode and the first source electrode are respectively connected with a doped region in the first active layer through a through hole, and the light-emitting unit penetrates through the piezoelectric thin film layer and is connected with the first drain electrode.
Optionally, the light emission driving circuit further includes:
a third insulating layer covering the first drain electrode and the first source electrode;
a second connection electrode formed on the third insulating layer, the second connection electrode being connected to the first drain electrode through a via hole;
forming a planarization layer covering the second connection electrode and a first protective layer disposed on the planarization layer;
and the fourth connecting electrode is formed on the first protective layer and is connected with the second connecting electrode through a through hole, and the light-emitting unit penetrates through the piezoelectric thin film layer and is connected with the fourth connecting electrode.
Optionally, the processing circuit comprises:
a second active layer formed on the substrate;
a first insulating layer covering the second active layer and a second gate electrode disposed on the first insulating layer;
the second source electrode is arranged on the second insulating layer, the second source electrode is connected with the doped region in the second active layer through a through hole, and the first connecting electrode is connected with the second gate electrode through a through hole;
a third insulating layer covering the second drain electrode, the first connection electrode, and the second source electrode;
and a receiving electrode formed on the third insulating layer, the receiving electrode being connected to the first connecting electrode through a via hole.
Optionally, the processing circuit further comprises:
a third connection electrode formed on the third insulating layer, the third connection electrode being connected to the first connection electrode through a via hole;
the receiving electrode is arranged on the first protective layer and connected with the third connecting electrode through a via hole.
Optionally, the fingerprint sensor is an ultrasonic fingerprint sensor.
Optionally, the material of the substrate is an ultrasonic wave absorbing material.
In order to solve the above problems, the present invention further provides a method for manufacturing a display substrate, including:
forming a light emitting driving circuit on a substrate;
forming a piezoelectric thin film layer over the light emission driving circuit;
and forming a light emitting unit on the piezoelectric film layer, and enabling the light emitting unit to penetrate through the piezoelectric film layer to be connected with the light emitting driving circuit.
The display substrate of the invention covers the piezoelectric film layer on the whole pixel unit, thereby not only realizing the OLED display device with the embedded fingerprint identification function, but also realizing the fingerprint identification function in the display area.
Of course, not all of the advantages described above need to be achieved at the same time in the practice of any one product or method of the invention. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the embodiments of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention. The shapes and sizes of the various elements in the drawings are not to scale and are merely intended to illustrate the invention.
FIG. 1 is a schematic view of a display substrate according to an embodiment of the present invention;
FIG. 2 is a schematic view of a display substrate according to the present invention;
FIG. 3 is a schematic view of a display substrate according to a first embodiment of the present invention after forming a pattern of a base and an active layer;
FIG. 4 is a schematic structural diagram of a display substrate according to a first embodiment of the present invention after a first gate electrode pattern is formed;
FIG. 5 is a schematic view of a first embodiment of a display substrate according to the present invention after forming a second gate electrode pattern;
FIG. 6 is a schematic view of a first embodiment of a display substrate according to the present invention after forming a source/drain electrode pattern;
FIG. 7 is a schematic view of a display substrate according to a first embodiment of the present invention after forming a connection electrode;
FIG. 8 is a schematic view of a first embodiment of a display substrate according to the present invention after forming a receiving electrode;
FIG. 9 is a schematic view of a first embodiment of a display substrate according to the present invention after a piezoelectric thin film layer is formed thereon;
FIG. 10 is a schematic view of a display substrate according to a first embodiment of the present invention after forming a driving electrode and an anode;
FIG. 11 is a schematic view of a first embodiment of a display substrate according to the present invention after a pixel defining layer is formed thereon;
FIG. 12 is a schematic view of a first embodiment of a display substrate according to the present invention after forming a light-emitting layer and a cathode;
FIG. 13 is a schematic view of a second embodiment of a display substrate according to the present invention after forming a first gate electrode pattern;
fig. 14 is a schematic structural view of a display substrate according to a third embodiment of the present invention after a second gate electrode pattern is formed.
Description of reference numerals:
10-substrate 11-luminous structure layer 12-fingerprint identification structure layer
13-light emitting unit 14-first thin film transistor 15-fingerprint identification sensor
16-second thin film transistor 17-first active layer 18-second active layer
19-first insulating layer 20-first gate electrode 21-second gate electrode
22-second insulating layer 23-first drain electrode 24-first source electrode
25-second drain electrode 26-first connecting electrode 27-second source electrode
28-third insulating layer 29-second connection electrode 30-third connection electrode
31-planarization layer 32-first protective layer 33-fourth connection electrode
34-receiving electrode 35-extraction electrode 36-second protective layer
37-piezoelectric film layer 38-driving electrode 39-anode
40-pixel definition layer 41-light emitting layer 42-second cathode
43-first cathode 44-encapsulation layer 101-barrier layer
Detailed Description
The following detailed description of embodiments of the invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
FIG. 1 is a schematic view of a display substrate according to an embodiment of the present invention; fig. 2 is a schematic structural diagram of a display substrate according to the present invention. As shown in fig. 1 and 2, in order to solve the problem that the conventional display substrate can only realize non-display area key-type fingerprint identification in an external bonding mode. The invention provides a display substrate, which comprises a substrate and a plurality of pixel units 100 arranged on the substrate in an array manner, wherein each pixel unit 100 comprises a light emitting structure layer 11 and a fingerprint identification structure layer 12, and the light emitting structure layer 11 and the fingerprint identification structure layer 12 are formed on the substrate 10. The light emitting structure layer 11 includes a light emitting unit 13 and a light emitting driving circuit 14, the fingerprint identification structure layer 12 includes a fingerprint identification sensor 15 for forming a fingerprint electrical signal, the fingerprint identification sensor 15 includes a piezoelectric thin film layer 37, the piezoelectric thin film layer 37 is located between the light emitting unit 13 and the light emitting driving circuit 14 and covers the pixel unit 100, and the light emitting unit 13 penetrates through the piezoelectric thin film layer 37 and is connected with the light emitting driving circuit 14.
The display substrate of the invention covers the piezoelectric film layer on the whole pixel unit, thereby not only realizing the OLED display device with the embedded fingerprint identification function, but also realizing the fingerprint identification function in the display area.
The technical solution of the present invention will be described in detail by the following specific examples.
First embodiment
The display substrate of this embodiment is fabricated by a Complementary Metal Oxide Semiconductor (CMOS) process. As shown in fig. 2, the display substrate according to the embodiment of the invention includes a substrate 10, and a light emitting structure layer 11 and a fingerprint identification structure layer 12 formed on the substrate 10, wherein the light emitting structure layer 11 includes a light emitting unit 13 and a light emitting driving circuit 14, the light emitting unit 13 is configured to emit display light, and the light emitting driving circuit 14 is configured to control and drive the light emitting unit 13. The fingerprint identification structure layer 12 includes a fingerprint identification sensor 15 and a processing circuit 16, the fingerprint identification sensor 15 is used for forming a fingerprint electrical signal, and the processing circuit 16 is used for receiving the fingerprint electrical signal from the fingerprint identification sensor 15 and processing the fingerprint electrical signal. The fingerprint recognition sensor 15 includes a piezoelectric thin film layer 37, the piezoelectric thin film layer 37 is located between the light emitting unit 13 and the light emission driving circuit 14 and covers the entire pixel unit, and the light emitting unit 13 penetrates through the piezoelectric thin film layer 37 and is connected to the light emission driving circuit 14.
As shown in fig. 2, the fingerprint recognition sensor 15 includes a lead electrode 35, a piezoelectric thin film layer 37 formed on the lead electrode 35, a drive electrode 38 formed on the piezoelectric thin film layer 37, and a first cathode 42 formed on the drive electrode 38, and the drive electrode 38 is connected to the lead electrode 35 through the piezoelectric thin film layer 37.
As shown in fig. 2, the light emitting unit 13 includes an anode 39 formed on the piezoelectric thin film layer 37, a light emitting layer 41 formed on the anode 39, and a second cathode 43 formed on the light emitting layer 41, the anode 39 is in the same layer as the driving electrode 38, and the anode 39 penetrates through the piezoelectric thin film layer 37 and is connected to the light emitting driving circuit 14.
The display substrate of the invention covers the piezoelectric film layer on the whole pixel unit, thereby not only realizing the OLED display device with the embedded fingerprint identification function, but also realizing the fingerprint identification function in the display area.
In one embodiment, the light-emitting driving circuit 14 includes a first thin film transistor, and the processing circuit 16 includes a second thin film transistor, where the first thin film transistor is a P-type thin film transistor and the second thin film transistor is an N-type thin film transistor.
As shown in fig. 2, a barrier layer is provided on the substrate 10. The light emitting structure layer 11 and the fingerprint identification structure layer 12 are both formed on the barrier layer.
In this embodiment, the fingerprint sensor is an ultrasonic fingerprint sensor. The fingerprint identification sensor comprises a piezoelectric film layer, and the working principle is as follows: inputting AC voltage to the fingerprint identification sensor, wherein the piezoelectric film layer of the fingerprint identification sensor can generate ultrasonic waves under the inverse piezoelectric effect, and the ultrasonic waves are transmitted to the finger; the ridges and valleys of the fingerprint reflect the sound wave energy back to the piezoelectric film layer of the fingerprint identification sensor, and the piezoelectric film layer of the fingerprint identification sensor can generate a fingerprint electric signal under the positive piezoelectric effect. The processing circuit is connected with the fingerprint identification sensor, receives the fingerprint electric signal from the fingerprint identification sensor, and processes the fingerprint electric signal so as to identify the fingerprint.
As shown in fig. 2, the substrate 10 is made of an ultrasonic wave absorbing material, and the substrate 10 can absorb the reverse sound wave emitted by the fingerprint sensor 15, so that the fingerprint sensor 15 does not need to be provided with a special reverse ultrasonic wave absorbing layer, and the preparation process of the fingerprint sensor 15 is simplified.
The following further illustrates the technical solution of this embodiment through the manufacturing process of the display substrate of this embodiment. The "patterning process" in this embodiment includes processes such as film deposition, photoresist coating, mask exposure, development, etching, and photoresist stripping, the "photolithography process" in this embodiment includes processes such as film coating, mask exposure, and development, and the evaporation, deposition, coating, and coating in this embodiment are well-established preparation processes in the related art.
FIGS. 3-12 are schematic diagrams illustrating a manufacturing process of the display substrate of this embodiment. The preparation process of the display substrate comprises the following steps:
(1) a substrate and an active layer pattern are formed. Forming the substrate and the active layer pattern includes: firstly, a layer of flexible material is coated on a glass carrier plate, the flexible material is solidified into a film to form a substrate 10, and then a layer of barrier film is deposited on the substrate 10 to form a barrier layer 101 pattern covering the whole substrate 10. Then, a polysilicon thin film is formed over the barrier layer 101, and the polysilicon thin film is patterned through a patterning process to form two active layer patterns disposed on the barrier layer 101. Finally, the two active layer patterns are subjected to ion implantation processes of PMOS threshold voltage adjustment and NMOS threshold voltage adjustment, respectively, to form first active layer 17 and second active layer 18 patterns, as shown in fig. 3.
(2) A first gate electrode pattern is formed. Forming the first gate electrode pattern includes: on the substrate on which the patterns are formed, a first insulating film and a first metal film are sequentially deposited to form a first insulating layer 19 covering the patterns of the first active layer 17 and the second active layer 18, the first metal film is patterned through a patterning process to form a first gate electrode 20 disposed on the first insulating layer 19, and the first gate electrode 20 is located above the first active layer 17. Then, with the first gate electrode 20 as a mask, PMOS heavily doped ion implantation is performed on the first active layer 17, so that regions on both sides of the first active layer 17 form heavily doped regions, while the second active layer 18 is masked and protected by the first metal film pattern disposed on the first insulating layer 19, as shown in fig. 4.
(3) A second gate electrode pattern is formed. Forming the second gate electrode pattern includes: on the substrate on which the aforementioned pattern is formed, the first metal thin film disposed over the second active layer 18 is patterned through a patterning process, and a second gate electrode 21 pattern disposed on the first insulating layer 19 is formed over the second active layer 18. Then, with the second gate electrode 21 pattern as a mask, NMOS light doping and NMOS heavy doping ion implantation are performed on the second active layer 18, so that a light doped region and a heavy doped region are formed in the regions on both sides of the second active layer 18, and the light doped region is located between the heavy doped region and the channel region, as shown in fig. 5.
(4) And forming a source and drain electrode pattern. Forming the source-drain electrode pattern includes: on the substrate with the patterns, a second insulating film is deposited on the first gate electrode 20 and the second gate electrode 21 to form a second insulating layer 22 covering the first gate electrode 20 and the second gate electrode 21, and a first via hole exposing the heavily doped regions at two sides of the first active layer 17, a second via hole exposing the heavily doped regions at two sides of the second active layer 18 and a third via hole exposing one gate electrode in the second gate electrode 21 are sequentially formed in the second insulating layer 22 through a composition process. Subsequently, on the substrate on which the foregoing pattern is formed, a second metal thin film is deposited, the second metal thin film is patterned through a patterning process, a first drain electrode 23, a first source electrode 24, a second drain electrode 25, a first connection electrode 26, and a second source electrode 27 are formed on the second insulating layer 22, the first drain electrode 23 and the first source electrode 24 are connected to the heavily doped regions at both sides of the first active layer 17 through first via holes, respectively, the second drain electrode 25 and the second source electrode 27 are connected to the heavily doped regions at both sides of the second active layer 18 through second via holes, respectively, and the first connection electrode 26 is connected to one of the second gate electrodes 21 through a third via hole, as shown in fig. 6.
(5) Forming a connection electrode pattern. Forming the connection electrode pattern includes: on the substrate on which the aforementioned pattern is formed, a third insulating film is deposited, a third insulating layer 28 covering the first drain electrode 23, the first source electrode 24, the second drain electrode 25, the first connection electrode 26, and the second source electrode 27 is formed, and a fourth via hole exposing the first drain electrode 23 and a fifth via hole exposing the first connection electrode 26 are formed on the third insulating layer 28 through a patterning process. Subsequently, on the substrate on which the aforementioned pattern is formed, a third metal thin film is deposited, and the third metal thin film is patterned through a patterning process, and a second connection electrode 29 and a third connection electrode 30 are formed on the third insulating layer 28, the second connection electrode 29 being connected to the first drain electrode 23 through a fourth via hole, and the third connection electrode 30 being connected to the first connection electrode 26 through a fifth via hole, as shown in fig. 7.
(5) Forming a receiving electrode pattern. Forming the receiving electrode pattern includes: on the substrate on which the patterns are formed, a flat film is coated, then a first protective film is deposited, a flat layer 31 covering the second connecting electrode 29 and the third connecting electrode 30 and a first protective layer 32 arranged on the flat layer 31 are formed, and a sixth through hole exposing the second connecting electrode 29 and a seventh through hole exposing the third connecting electrode 30 are formed on the first protective layer 32 and the flat layer 31 through a patterning process. Subsequently, a fourth metal film is deposited on the substrate on which the pattern is formed, the fourth metal film is patterned through a patterning process, a fourth connection electrode 33, a receiving electrode 34 and a lead-out electrode 35 are formed on the first protective layer 32, the fourth connection electrode 33 is connected with the second connection electrode 29 through a sixth via hole, and the receiving electrode 34 is connected with the third connection electrode 30 through a seventh via hole. Wherein the first active layer 17, the first gate electrode 20, the first drain electrode 23, the first source electrode 24, the second connection electrode 29, and the fourth connection electrode 33 form a first thin film transistor. The second active layer 18, the second gate electrode 21, the second drain electrode 25, the first connection electrode 26, the second source electrode 27, the third connection electrode 30, and the receiving electrode 34 form a second thin film transistor, as shown in fig. 8.
(6) And forming the piezoelectric film layer. The forming the piezoelectric thin film layer includes: on the substrate on which the aforementioned pattern is formed, a second protective layer 36 is formed to cover the fourth connection electrode 33, the receiving electrode 34, and the extraction electrode 35, a piezoelectric thin film layer 37 is formed on the second protective layer 36 to cover the second protective layer 36, and then an eighth via hole exposing the fourth connection electrode 33 and a ninth via hole exposing the extraction electrode 35 are opened on the piezoelectric thin film layer 37 and the second protective layer 36 by a patterning process, as shown in fig. 9.
(7) A driving electrode and an anode pattern are formed. Forming the driving electrode and the anode pattern includes: on the substrate on which the aforementioned pattern is formed, a fifth metal thin film is deposited, and the fifth metal thin film is patterned by a patterning process, and a driving electrode 38 is formed on the piezoelectric thin film layer 37. Subsequently, a sixth metal film is deposited, and the sixth metal film is patterned through a patterning process to form an anode 39, where the anode 39 is connected to the fourth connection electrode 33 through an eighth via hole, and the driving electrode 38 is connected to the extraction electrode 35 through a ninth via hole, as shown in fig. 10.
(8) A pixel definition layer is formed. Forming the pixel defining layer includes: on the substrate on which the foregoing pattern is formed, a pixel defining layer 40 exposing the anode electrode 39 and the driving electrode 38 is formed as shown in fig. 11.
(9) A light emitting layer and a cathode are formed. Forming the light emitting layer and the cathode includes: on the substrate on which the aforementioned pattern is formed, a light emitting layer 41 is formed in an opening of the pixel defining layer 40, the light emitting layer 41 is connected to the anode 39, and then, a first cathode 43 connected to the driving electrode 38 is formed, and a second cathode 42 connected to the light emitting layer 41 is formed. The anode 39, the pixel defining layer 40, the light emitting layer 41, and the second cathode 42 form the light emitting unit 13; the receiving electrode 34, the piezoelectric thin film layer 37, the driving electrode 38 and the first cathode 43 form the fingerprint recognition sensor 15, as shown in fig. 12. .
Wherein, the anode 39 and the driving electrode 38 are in the same layer, and the anode 39 penetrates through the piezoelectric film layer 37 and is connected with the fourth connecting electrode 33; the driving electrode 38 penetrates the piezoelectric thin film layer 37 and is connected to the extraction electrode 35.
(10) And forming an encapsulation layer. Forming the encapsulation layer includes: an encapsulation layer 44 is formed on the second cathode 42 and the first cathode 43, and then the glass carrier is separated from the substrate 10, and a substrate protective film is attached on the substrate, as shown in fig. 2.
In an embodiment, the driving electrode and the receiving electrode in the fingerprint identification structure layer are respectively driven by separate IC chips. The light emitting structure layer is driven by GOA and is driven by an independent IC chip. The IC chip of the fingerprint identification structure layer and the IC chip of the light-emitting structure layer are mutually independent IC chips.
As can be seen from the above manufacturing process of the present embodiment, in the present embodiment, by integrating the fingerprint identification structure layer 12 into the display substrate, not only the OLED display device with the embedded fingerprint identification function is realized, but also the fingerprint identification function in the display area is realized.
In addition, the preparation process of the embodiment can be realized by utilizing the existing mature preparation equipment, the improvement on the existing process is small, and the preparation process can be well compatible with the existing preparation process, so that the preparation process has the advantages of low manufacturing cost, easiness in process realization, high production efficiency, high yield and the like, and has a good application prospect.
Second embodiment
Fig. 13 is a schematic structural view of a second embodiment of the display substrate of the invention, which illustrates a structure prepared by using an N-Channel Metal Oxide Semiconductor (NMOS) process.
As shown in fig. 13, the display substrate of the present embodiment includes a substrate 10, and a light emitting structure layer 11 and a fingerprint identification structure layer 12 formed on the substrate 10. Light emitting structure layer 11 includes luminescence unit and luminous drive circuit, and fingerprint identification structure layer 12 is including the fingerprint identification sensor that is used for forming the fingerprint signal of telecommunication, and the fingerprint identification sensor includes piezoelectric film layer, and piezoelectric film layer is located between luminescence unit and the luminous drive circuit to cover the pixel cell, luminescence unit run through piezoelectric film layer with luminous drive circuit connects.
The display substrate of the invention covers the piezoelectric film layer on the whole pixel unit, thereby not only realizing the OLED display device with the embedded fingerprint identification function, but also realizing the fingerprint identification function in the display area.
As shown in fig. 13, the display substrate of this embodiment is substantially the same as the display substrate of the first embodiment, except that when the first gate electrode pattern is formed, the display substrate of this embodiment performs NMOS light doping and NMOS heavy doping ion implantation on the first active layer 17 by using the first gate electrode 20 as a shielding layer, so that N-type light doping regions and N-type heavy doping regions are formed in regions on two sides of the first active layer 17, and the N-type light doping regions are located between the N-type heavy doping regions and the channel region.
Third embodiment
Fig. 14 is a schematic structural view of a third embodiment of the display substrate of the invention, which illustrates a structure prepared by using a P-Channel Metal Oxide Semiconductor (PMOS) process.
As shown in fig. 14, the display substrate of the present embodiment includes a substrate 10, and a light emitting structure layer 11 and a fingerprint identification structure layer 12 on the substrate 10. Light emitting structure layer 11 includes luminescence unit and luminous drive circuit, and fingerprint identification structure layer 12 is including the fingerprint identification sensor that is used for forming the fingerprint signal of telecommunication, and the fingerprint identification sensor includes piezoelectric film layer, and piezoelectric film layer is located between luminescence unit and the luminous drive circuit to cover the pixel cell, luminescence unit run through piezoelectric film layer with luminous drive circuit connects.
The display substrate of the invention covers the piezoelectric film layer on the whole pixel unit, thereby not only realizing the OLED display device with the embedded fingerprint identification function, but also realizing the fingerprint identification function in the display area.
As shown in fig. 14, the display substrate of this embodiment is substantially the same as the display substrate of the first embodiment, except that when the second gate electrode pattern is formed, the second gate electrode 21 pattern is used as a shielding layer to perform PMOS heavily doped ion implantation on the second active layer 18, so that the second active layer 18 forms a P-type heavily doped region.
Fourth embodiment
Based on the technical concept of the foregoing embodiment, the present invention further provides a method for manufacturing a display substrate, including:
forming a light emitting driving circuit on a substrate;
forming a piezoelectric thin film layer over the light emission driving circuit;
and forming a light emitting unit on the piezoelectric film layer, and connecting the light emitting unit with the light emitting drive circuit through the piezoelectric film layer.
In the description of the embodiments of the present invention, it should be understood that the terms "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the embodiments of the present invention, it should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (11)
1. The utility model provides a display substrate, includes the basement and sets up a plurality of pixel on the basement, the pixel includes light emitting structure layer and fingerprint identification structural layer, light emitting structure layer includes light emitting element and luminous drive circuit, its characterized in that, the fingerprint identification structural layer is including the fingerprint identification sensor who is used for forming the fingerprint signal of telecommunication, the fingerprint identification sensor includes piezoelectric film layer, piezoelectric film layer is located the light emitting element with between the luminous drive circuit to cover the pixel, the light emitting element includes the positive pole, the positive pole runs through piezoelectric film layer with luminous drive circuit connects.
2. The display substrate of claim 1, wherein the fingerprint sensor comprises an extraction electrode, the piezoelectric thin film layer formed on the extraction electrode, a driving electrode formed on the piezoelectric thin film layer, and a first cathode formed on the driving electrode, wherein the driving electrode penetrates through the piezoelectric thin film layer and is connected to the extraction electrode.
3. The display substrate of claim 2, wherein the light emitting unit comprises the anode formed on the piezoelectric thin film layer, a light emitting layer formed on the anode, and a second cathode formed on the light emitting layer, and the anode and the driving electrode are in the same layer.
4. The display substrate of claim 1, wherein the fingerprint identification structure layer further comprises a processing circuit, and the processing circuit is configured to receive an electrical fingerprint signal from the fingerprint identification sensor and process the electrical fingerprint signal.
5. The display substrate according to claim 1, wherein the light emission driving circuit comprises:
a first active layer formed on the substrate;
a first insulating layer covering the first active layer and a first gate electrode disposed on the first insulating layer;
the second insulating layer covers the first gate electrode, and the first drain electrode and the first source electrode are arranged on the second insulating layer, the first drain electrode and the first source electrode are respectively connected with a doped region in the first active layer through a through hole, and the light-emitting unit penetrates through the piezoelectric thin film layer and is connected with the first drain electrode.
6. The display substrate according to claim 5, wherein the light emission driving circuit further comprises:
a third insulating layer covering the first drain electrode and the first source electrode;
a second connection electrode formed on the third insulating layer, the second connection electrode being connected to the first drain electrode through a via hole;
forming a planarization layer covering the second connection electrode and a first protective layer disposed on the planarization layer;
and the fourth connecting electrode is formed on the first protective layer and is connected with the second connecting electrode through a through hole, and the light-emitting unit penetrates through the piezoelectric thin film layer and is connected with the fourth connecting electrode.
7. The display substrate of claim 4, wherein the processing circuit comprises:
a second active layer formed on the substrate;
a first insulating layer covering the second active layer and a second gate electrode disposed on the first insulating layer;
the second source electrode is arranged on the second insulating layer, the second source electrode is connected with the doped region in the second active layer through a through hole, and the first connecting electrode is connected with the second gate electrode through a through hole;
a third insulating layer covering the second drain electrode, the first connection electrode, and the second source electrode;
and a receiving electrode formed on the third insulating layer, the receiving electrode being connected to the first connecting electrode through a via hole.
8. The display substrate of claim 7, wherein the processing circuit further comprises:
a third connection electrode formed on the third insulating layer, the third connection electrode being connected to the first connection electrode through a via hole;
the receiving electrode is arranged on the first protective layer and connected with the third connecting electrode through a via hole.
9. The display substrate of claim 1, wherein the fingerprint sensor is an ultrasonic fingerprint sensor.
10. The display substrate of claim 9, wherein the substrate is made of an ultrasonic absorbing material.
11. A method for preparing a display substrate is characterized by comprising the following steps:
forming a light emitting driving circuit on a substrate;
forming a fingerprint identification sensor on the light-emitting driving circuit, wherein the fingerprint identification sensor is used for forming a fingerprint electric signal and comprises a piezoelectric film layer;
and forming a light-emitting unit on the piezoelectric thin film layer, wherein the light-emitting unit comprises an anode, and the anode penetrates through the piezoelectric thin film layer and is connected with the light-emitting driving circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910437896.2A CN110112202B (en) | 2019-05-24 | 2019-05-24 | Display substrate and preparation method thereof |
| PCT/CN2020/077869 WO2020238313A1 (en) | 2019-05-24 | 2020-03-05 | Display substrate for ultrasonic fingerprint recognition, manufacturing method therefor, and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910437896.2A CN110112202B (en) | 2019-05-24 | 2019-05-24 | Display substrate and preparation method thereof |
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| CN110112202A CN110112202A (en) | 2019-08-09 |
| CN110112202B true CN110112202B (en) | 2021-04-30 |
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| CN201910437896.2A Active CN110112202B (en) | 2019-05-24 | 2019-05-24 | Display substrate and preparation method thereof |
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| CN (1) | CN110112202B (en) |
| WO (1) | WO2020238313A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109993156B (en) * | 2019-04-24 | 2022-09-06 | 京东方科技集团股份有限公司 | Ultrasonic fingerprint identification panel and display device |
| CN110112202B (en) * | 2019-05-24 | 2021-04-30 | 京东方科技集团股份有限公司 | Display substrate and preparation method thereof |
| EP4035058A4 (en) * | 2019-09-27 | 2022-10-12 | BOE Technology Group Co., Ltd. | Ultrasonic fingerprint sensor apparatus, method of operating ultrasonic fingerprint sensor apparatus, and method of fabricating ultrasonic fingerprint sensor apparatus |
| WO2021189247A1 (en) * | 2020-03-24 | 2021-09-30 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display panel |
| WO2021189304A1 (en) * | 2020-03-25 | 2021-09-30 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN111524461A (en) * | 2020-04-27 | 2020-08-11 | 武汉华星光电半导体显示技术有限公司 | Display module and preparation method thereof |
| KR20220001984A (en) * | 2020-06-30 | 2022-01-06 | 엘지디스플레이 주식회사 | Display apparatus |
| CN111814712A (en) * | 2020-07-15 | 2020-10-23 | 京东方科技集团股份有限公司 | Grain recognition device and display equipment |
| CN111799388B (en) * | 2020-08-24 | 2023-05-19 | 京东方科技集团股份有限公司 | Display backboard, manufacturing method thereof and display device |
| CN114531921A (en) * | 2020-08-31 | 2022-05-24 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN112038380B (en) * | 2020-09-08 | 2023-04-07 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN112633166B (en) * | 2020-12-23 | 2022-12-09 | 厦门天马微电子有限公司 | Ultrasonic fingerprint identification module, display module and electronic equipment |
| CN112701149B (en) * | 2020-12-29 | 2022-08-02 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
| CN113327953B (en) * | 2021-05-11 | 2022-09-27 | 武汉华星光电技术有限公司 | Display panel |
| CN114168011B (en) * | 2021-12-07 | 2023-10-17 | 武汉华星光电半导体显示技术有限公司 | Display panel and mobile terminal |
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| WO2020238313A1 (en) | 2020-12-03 |
| CN110112202A (en) | 2019-08-09 |
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