CN110112055A - A kind of minimizing technology for crystal column surface protection carbon film - Google Patents
A kind of minimizing technology for crystal column surface protection carbon film Download PDFInfo
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- CN110112055A CN110112055A CN201910333715.1A CN201910333715A CN110112055A CN 110112055 A CN110112055 A CN 110112055A CN 201910333715 A CN201910333715 A CN 201910333715A CN 110112055 A CN110112055 A CN 110112055A
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- carbon film
- crystal column
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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Abstract
The invention discloses a kind of minimizing technologies for crystal column surface protection carbon film, comprising the following steps: S0, provides wafer, the crystal column surface has carbon film；S1, the crystal column surface described in S0 chemically-mechanicapolish polish.Removal of the present invention for wafer pyrometer activation annealing surface protection carbon film, has the advantages that move back that the film time is short, strong operability, can fundamentally solve the problems, such as to increase because high annealing bring surface silicon is precipitated with roughness, carbon film removal is completely, pollution-free；By taking silicon carbide as an example, SiC material surface is not that Al ion concentration highest point leads to device Ohmic contact and non-optimized problem after shallow-layer removal in SiC material surface is advantageously accounted for Al ion implanting while removing carbon film, the conducting resistance of Ohmic contact is effectively reduced, optimizes properties of product.
Description
Technical field
The invention belongs to technical field of semiconductor, and in particular to a kind of removal side for crystal column surface protection carbon film
Method.
Background technique
Silicon carbidebased devices have that breakdown voltage is high, conducting resistance is low, switching speed is fast, high temperature resistant, radiation resistance etc. are excellent
Point, in field of power electronics, high-frequency high-speed field tool has been widely used and prospect.Silicon carbide SBD, JBS, MOSFET etc. at present
Device has been able to produce in batches and apply.When wherein ion implanting forms the area P of silicon carbide ohmic contact regions and JBS, injection
The activation efficiency of ion is the key factor for determining device performance.In order to activate injection to adulterate and eliminate caused by ion implanting
Lattice damage defect, needs to carry out SiC piece at high temperature activation annealing, and general temperature can be up to 1600 DEG C~1800 DEG C.But
It is that under so high activation annealing temperature, silicon carbide Si is easy to distil from surface of SiC, and with Si, Si2C、SiC2Etc. shapes
Formula is redeposited to form step cluster in wafer surface, causes SiC piece surface roughness to increase, interface state density increases, serious shadow
Ring device performance.In high annealing, common method is carbon film Protection Code at present, and production method generally sputters a kind of carbon
Film protective layer forms carbon film protective layer in baking-curing by photoresist.After the completion of high annealing, for protecting carbonization
This layer of carbon film of silicon face just needs to remove, and will affect Ohmic contact if carbon film removal is not clean, seriously affects opening for device
Close the performances such as characteristic, conductive characteristic, voltage endurance.It will appear the bad caused surface point of metal adhesion or face under serious conditions
Local shedding, influence the Performance And Reliability of device.So effectively removing this layer of carbon film just seems particularly significant.
Since carbon film has high rigidity, low-friction coefficient and low chemical affinity, so that carbon film usually uses following four
Method removal.One is diamond-like carbon film is removed by dry, vapour blasting.But sand-blast removal diamond-like carbon film
It is easy to generate SiC piece surface destructive damage simultaneously, damage is difficult to repair greatly, and in addition the method not can be carried out accurate control
System, repeatability is bad, is not suitable for large-scale production.The second is impregnating removal carbon film by chemical solution, chemical solution is mostly one
The hydrochloric acid for determining concentration adds a certain amount of nitric acid to make catalyst.It is on the one hand difficult to remove using chemical immersion method removal carbon film because high
Layer is precipitated in warm bring surface damage and silicon, on the other hand can not quickly confirm whether carbon film completely removes completely, soaking time
It is too long and will affect production efficiency, it is at high cost.Thirdly thermal oxidation method removes carbon film, this method is similarly difficult to removal because of height temperate zone
Layer is precipitated in the surface damage and silicon come.Its four use includes O2、N2Carbon film is removed with the plasma clean method of CO.Utilize etc. from
The surface roughness that the method for son etching obtains not can guarantee, and also need other methods optimization auxiliary.
In high annealing, although carbon film protects epi-layer surface, still having certain silicon and being precipitated influences carbon
The surface roughness of SiClx piece.Therefore, existing method cannot solve at all surface silicon caused by high annealing be precipitated layer, carbon-coating with
The problem of surface roughness increases.In addition existing method can not solve when Al ion implanting carbofrax material surface and it is non-implanted from
The sub- top bring Ohmic contact of concentration and non-optimized problem, in order to more effectively reduce the conducting resistance of Ohmic contact,
It must also be realized by other methods.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of minimizing technology for crystal column surface protection carbon film, mesh
Be to realize that silicon carbide plate surface protection carbon film after annealing at a high temperature effectively removes.Surface damage is removed simultaneously and layer is precipitated in silicon
And in carbofrax material and superficial layer that non-implanted ion concentration is top, Ohmic contact conducting resistance is reduced.
To achieve the goals above, the technical scheme adopted by the invention is as follows: it is a kind of to be gone for crystal column surface protection carbon film
Except method, comprising the following steps:
S0, wafer is provided, the crystal column surface has carbon film；
S1, the crystal column surface described in S0 chemically-mechanicapolish polish.
Further, for the substrate before high temperature activation anneal, the ion by high temperature tension and wafer surface layer is dense
Degree is not peak value.
Further, the chemically mechanical polishing eliminates carbon film and crystal column surface thickness is no more than the superficial of 100nm
Layer.
Further, after the step S0, before the step S1, including step S01, to silicon carbide plate carry out
Mechanical lapping.
Further, in the step S1, wafer material GaN, SiC, GaAs, InP or diamond.
Further, the wafer can be prepared into PiN diode, Schottky diode, junction barrier schottky diode, door
Pole cut-off crystal brake tube, insulated gate bipolar transistor or MOS memory.
Minimizing technology of the present invention for crystal column surface protection carbon film, has the following beneficial effects:
1, simple process, it is short to move back the film time, and carbon film stripping is clean, and operating performance is strong, at low cost；
2, it is fundamentally fully solved and increases problem with roughness because high annealing bring surface silicon is precipitated；
3, the removal of wafer material superficial layer, advantageously account for injection when bring interface be not concentration impurity ion most
Eminence leads to Ohmic contact and non-optimized problem, so as to which the conducting resistance of Ohmic contact, optimised devices are effectively reduced
Performance.
Detailed description of the invention
This specification includes the following drawings, and shown content is respectively:
Fig. 1 is process flow diagram of the present invention for the minimizing technology of crystal column surface protection carbon film；
Fig. 2 is silicon carbide JBS carbon film protection high annealing schematic diagram；
Fig. 3 is silicon carbide JBS high temperature protection carbon film removal schematic diagram；
In the figure, it is marked as the carbon film of 1, high annealing protection；2, silicon carbide epitaxy part；3, epitaxial layer passes through ion implanting
The area P of formation；4, substrate material；5, the lower extension superficial layer of ion implanted impurity concentration；6, all parts that need to be removed.
Specific embodiment
Below against attached drawing, by the description of the embodiment, making to a specific embodiment of the invention further details of
Explanation, it is therefore an objective to those skilled in the art be helped to have more complete, accurate and deep reason to design of the invention, technical solution
Solution, and facilitate its implementation.
The present invention provides a kind of minimizing technologies for crystal column surface protection carbon film, comprising the following steps:
S0, wafer is provided, the crystal column surface has carbon film；
S1, the crystal column surface described in S0 chemically-mechanicapolish polish.
Specifically, in the present embodiment, wafer is silicon carbide plate.As shown in Figures 2 and 3, in order to activate mixing for injection
Damage defect caused by impurity and elimination injection process, needs to carry out activation annealing at high temperature to silicon carbide device.
The silicon carbide plate is before high temperature activation anneal, by high temperature tension and the ion concentration on silicon carbide plate surface layer
It is not peak value (ion implanting rear impurity concentration is in Gaussian Profile along depth direction, and concentration highest point is not or not surface), namely
Silicon carbide plate surface layer and non-implanted ion concentration is top.After the completion of silicon carbide device annealing, it will be used to protect silicon carbide
Carbon film removal.
In above-mentioned steps S1, the chemically mechanical polishing eliminates carbon film and silicon carbide plate surface thickness is no more than
The surface layer of 100nm, the material on the surface layer are SiC.In carbon film removal, carbon film is covered on the surface layer.After carbon film removal, dew
Then surface layer out removes certain thickness surface layer, the removal technique on surface layer and the removal technique of carbon film are identical.Namely effective
Extend certain depth (depth is within 100nm) to material layer again after removing silicon carbide device surface carbon film, removes superficial layer.
Carbon film and some materials shallow-layer can quickly and effectively be completely removed in the case where not introducing exogenous impurity by the method.
As shown in Figure 1, removing silicon carbide device surface using CMP process (CMP) in above-mentioned steps S1
Carbon film.
As variant embodiment, in above-mentioned steps S1, mechanical lapping first is carried out to silicon carbide device, then to carbonization
Silicon device is chemically-mechanicapolish polished, and carbon film and the silicon carbide surface layer on silicon carbide device surface are removed.Moreover, in above-mentioned steps S1
In, mechanical lapping or chemically mechanical polishing, and the use that can arrange in pairs or groups are carried out using the grinding wheel compared with high mesh number.
Silicon carbide device is PiN diode, Schottky diode, junction barrier schottky diode, gate electrode capable of switching off crystalline substance lock
The devices such as pipe, insulated gate bipolar transistor or MOS memory.
The present invention is exemplarily described in conjunction with attached drawing above.Obviously, present invention specific implementation is not by above-mentioned side
The limitation of formula.As long as using the improvement for the various unsubstantialities that the inventive concept and technical scheme of the present invention carry out；Or not
It is improved, above-mentioned conception and technical scheme of the invention are directly applied into other occasions, in protection scope of the present invention
Within.
Claims (6)
1. a kind of minimizing technology for crystal column surface protection carbon film, which comprises the following steps:
S0, wafer is provided, the crystal column surface has carbon film；
S1, the crystal column surface described in S0 chemically-mechanicapolish polish.
2. the minimizing technology according to claim 1 for crystal column surface protection carbon film, which is characterized in that the substrate exists
Before high temperature activation anneal, the ion concentration by high temperature tension and wafer surface layer is not peak value.
3. the minimizing technology according to claim 1 for crystal column surface protection carbon film, which is characterized in that the step S1
In, carbon film is eliminated using CMP process and crystal column surface thickness is no more than the superficial layer of 100nm.
4. the minimizing technology according to claim 1 for crystal column surface protection carbon film, which is characterized in that in the step
After S0, before the step S1, including step S01, to wafer carry out mechanical lapping.
5. the minimizing technology according to claim 1 for crystal column surface protection carbon film, which is characterized in that in the step
In S1, wafer material GaN, SiC, GaAs, InP or diamond.
6. the minimizing technology according to any one of claims 1 to 5 for crystal column surface protection carbon film, which is characterized in that institute
Stating wafer can be prepared into PiN diode, Schottky diode, junction barrier schottky diode, gate level turn-off thyristor, insulation
Grid bipolar junction transistor or MOS memory.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910333715.1A CN110112055B (en) | 2019-04-24 | 2019-04-24 | Method for removing protective carbon film on surface of wafer |
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| CN201910333715.1A CN110112055B (en) | 2019-04-24 | 2019-04-24 | Method for removing protective carbon film on surface of wafer |
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| CN110112055B CN110112055B (en) | 2021-10-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594263A (en) * | 2021-07-15 | 2021-11-02 | 淄博绿能芯创电子科技有限公司 | Silicon carbide diode and method of manufacture |
| CN115739859A (en) * | 2022-10-25 | 2023-03-07 | 广东鼎泰高科技术股份有限公司 | Carbon film removing device and method |
| CN117059483A (en) * | 2023-10-12 | 2023-11-14 | 深圳基本半导体有限公司 | Method for removing and detecting carbon protective film on surface of silicon carbide device |
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| US5674107A (en) * | 1995-04-25 | 1997-10-07 | Lucent Technologies Inc. | Diamond polishing method and apparatus employing oxygen-emitting medium |
| CN1607068A (en) * | 2003-10-15 | 2005-04-20 | 广东工业大学 | Polishing method of diamond material |
| CN103909464A (en) * | 2013-01-09 | 2014-07-09 | 华邦电子股份有限公司 | Chemical mechanical polishing method and self-alignment method |
| CN105580111A (en) * | 2013-09-25 | 2016-05-11 | 住友电气工业株式会社 | Method for manufacturing silicon-carbide semiconductor device |
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2019
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5674107A (en) * | 1995-04-25 | 1997-10-07 | Lucent Technologies Inc. | Diamond polishing method and apparatus employing oxygen-emitting medium |
| CN1607068A (en) * | 2003-10-15 | 2005-04-20 | 广东工业大学 | Polishing method of diamond material |
| CN103909464A (en) * | 2013-01-09 | 2014-07-09 | 华邦电子股份有限公司 | Chemical mechanical polishing method and self-alignment method |
| CN105580111A (en) * | 2013-09-25 | 2016-05-11 | 住友电气工业株式会社 | Method for manufacturing silicon-carbide semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594263A (en) * | 2021-07-15 | 2021-11-02 | 淄博绿能芯创电子科技有限公司 | Silicon carbide diode and method of manufacture |
| CN115739859A (en) * | 2022-10-25 | 2023-03-07 | 广东鼎泰高科技术股份有限公司 | Carbon film removing device and method |
| CN117059483A (en) * | 2023-10-12 | 2023-11-14 | 深圳基本半导体有限公司 | Method for removing and detecting carbon protective film on surface of silicon carbide device |
| CN117059483B (en) * | 2023-10-12 | 2024-01-30 | 深圳基本半导体有限公司 | Method for removing and detecting carbon protective film on surface of silicon carbide device |
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