CN110098283A - A kind of ion implanting phosphorus diffusion method of matching laser selective doping - Google Patents
A kind of ion implanting phosphorus diffusion method of matching laser selective doping Download PDFInfo
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- CN110098283A CN110098283A CN201910338924.5A CN201910338924A CN110098283A CN 110098283 A CN110098283 A CN 110098283A CN 201910338924 A CN201910338924 A CN 201910338924A CN 110098283 A CN110098283 A CN 110098283A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 76
- 239000011574 phosphorus Substances 0.000 title claims abstract description 76
- 238000009792 diffusion process Methods 0.000 title claims abstract description 35
- 150000002500 ions Chemical class 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 26
- 239000007924 injection Substances 0.000 claims abstract description 26
- 238000000137 annealing Methods 0.000 claims abstract description 24
- 230000001133 acceleration Effects 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000002513 implantation Methods 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 7
- 230000004913 activation Effects 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims abstract description 4
- 238000009826 distribution Methods 0.000 claims abstract description 3
- 239000002019 doping agent Substances 0.000 claims abstract description 3
- -1 phosphonium ion Chemical class 0.000 claims abstract description 3
- 230000008569 process Effects 0.000 claims description 25
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- 125000004437 phosphorous atom Chemical group 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 8
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The present invention relates to a kind of novel ion injection technology, in particular to a kind of ion implanting phosphorus diffusion method of matching laser selective doping.Method includes the following steps: 1. the P-type wafer surface first time ion implanting phosphorus after making herbs into wool, the phosphorus of selection injection low dosage inject the high acceleration voltage of simultaneous selection；2. activation+knot of annealing, keeps the phosphorus diffusion knot surface dopant concentration to be formed low, available phosphorus doping concentration distribution is more gentle with change in depth, forms the area Qing Kuo that sheet resistance is 140-180ohm/sq；3. second of phosphonium ion injection: the phosphorus of this implantation dosage high phosphorus, it is therefore an objective to form the phosphorus-diffused layer of high concentration in silicon wafer near surface；4. laser doping: laser selective activates the phosphorus of second of ion implanting；5. cleaning.The present invention is compound in battery phosphorus diffusion knot by reducing, and promotes phosphorus diffusion sheet resistance uniformity and reduces cell series resistance loss, further promotes PERC battery efficiency.
Description
Technical field
The present invention relates to a kind of novel ion injection technology, in particular to a kind of ion note of matching laser selective doping
Enter phosphorus diffusion method, belongs to technical field of photovoltaic power generation.
Background technique
With the gradual depletion of fossil energy, clean energy resource is more valued by people.Photovoltaic power generation technology is as benefit
With the mainstream technology of solar energy resources, the marketization and commercialization have been moved towards.For the benefit for further promoting photovoltaic cell product
With and promote, need to step up battery efficiency, reduction degree electricity cost.
The phosphorus diffusion knot preparation method of photovoltaic mainstream is high temperature thermal diffusion at this stage, and major defect mainly has at 3 points, one,
Combined influence is conducted by high temperature diffusion furnace tube and air heat, silicon wafer central temperature is low compared with surrounding in thermal diffusion process, leads to it
The sheet resistance uniformity of diffusion is low.Two, source amount is spread in diffusion process accurately to be controlled, and cause technology stability poor.Three, hot
Its power resources of knot are spread in the concentration gradient of temperature and different depth, cause its silicon chip surface phosphorus doping density high, the area
Domain auger recombination is high, and battery open circuit voltage is low.
Summary of the invention
It is an object of the invention to a kind of ion implanting phosphorus diffusion method of matching laser selective doping, this method can be made
The phosphorus diffusion selective emitter of standby high quality, promotes conversion efficiency of solar cell.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of ion implanting phosphorus diffusion method of matching laser selective doping, method includes the following steps:
1. the P-type wafer surface first time ion implanting phosphorus after making herbs into wool, the phosphorus of selection injection low dosage, injection simultaneous selection are high
Acceleration voltage, the injection rate of phosphorus are 8 × 1014To 10 × 1014 cm-2, acceleration voltage 10-14kV；
2. activation+knot of annealing, keeps the phosphorus diffusion knot surface dopant concentration to be formed low, available phosphorus doping concentration distribution becomes with depth
Change is more gentle, forms the area Qing Kuo that sheet resistance is 140-180ohm/sq；
3. second of phosphonium ion injection: the phosphorus of this implantation dosage high phosphorus, the injection rate of phosphorus are 4 × 1015To 6 × 1015 cm-2,
Acceleration voltage is 4-6KV, it is therefore an objective to form the phosphorus-diffused layer of high concentration in silicon wafer near surface；
4. laser doping: laser selective activates the phosphorus of second of ion implanting, forms subsequent metallisation grid line contact area
Area is re-expanded, re-expand area's sheet resistance is 20-40ohm/sq；
5. cleaning: washing the area Qing Kuo not by second of ion implanting of laser active containing phosphorous layer, ultimately form complete choosing
Selecting property phosphorus diffusion emitter.
The method of the present invention be applied to nowadays can volume production efficient PERC battery preparation in, PERC battery is excellent due to its
Passivating back and laser slotting technique, volume production efficiency have been approached 22%.The present invention is multiple in battery phosphorus diffusion knot by reducing
It closes, promote phosphorus diffusion sheet resistance uniformity and reduces cell series resistance loss, (the corresponding compound drop of the promotion of Voc in contrast groups
It is low, the reduction of the corresponding series resistance of the promotion of FF), further promote PERC battery efficiency.
In the present invention, ion implantation technique is discharged by excited gas, generates plasma, draws battery lead by accelerating
Cation in plasma forms the ion beam current with certain initial velocity.By to ion beam current density in the unit time
Movement velocity on driving belt of test and silicon wafer, that is, accurately control injection rate of the Doped ions in silicon wafer.Pass through
The extraction acceleration voltage for controlling plasma can influence the energy for drawing ion beam current, and then the injection for influencing doped chemical is deep
Degree.Guaranteeing that the ion beam current drawn is uniform in entire silicon wafer motion range, that is, can guarantee that the sheet resistance for preparing diffusion junctions is uniform
Property.
It by the rational design to ion implantation technology, is realized using laser selective doping techniques, prepares the area side Qing Kuo
Resistance has good uniformity, and surface phosphorus doping density is low, and auger recombination is low.It is low to re-expand area's sheet resistance, subsequent metallisation covering and silicon wafer table
The low efficient PERC battery of face contact resistance.
Preferably, 2. step is annealed, activation+knot detailed process is: the active ions injection -1 in high annealing boiler tube
In be infused in phosphorus atoms in silicon wafer, using 850 ± 50 DEG C, the annealing process of 30 ± 5min, whole process is in 10 ± 2 L/min N2
With 1 ± 0.2 L/min O2Annealing in atmosphere forms the light expansion that sheet resistance is 160 ± 20 ohm/sq and ties.
Preferably, 5. detailed process that step is cleaned is: using 60 ± 5 DEG C of hydrogen peroxide+hydrochloric acid (volume ratio is 1:1)
Cleaning silicon chip 15-20min, subsequent hydrofluoric acid clean silicon chip surface oxide layer.The mass concentration of hydrochloric acid is 6-14%.
Preferably, this method specifically includes the following steps:
1. ion implanting -1: the P-type wafer surface after making herbs into wool carries out first time ion implanting, and selecting phosphorus implantation dosage first is 9
×1014 cm-2, acceleration voltage 12kV, formation first time phosphorus atoms implanted layer；
Main purpose: injecting the P elements of low dosage, forms that surface doping phosphorus concentration is low but junction depth in subsequent annealing process
Deep light expansion knot.Meanwhile near the space-charge region that PN junction is formed, phosphorus doping density is higher, enhances the light splitting effect of PN junction
Rate.
2. annealing+knot: the phosphorus atoms being infused in active ions injection -1 in silicon wafer in high annealing boiler tube use
850 ± 50 DEG C, the annealing process of 30 ± 5min, whole process is in 10 ± 2 L/min N2With 1 ± 0.2 L/minO2Annealing, shape in atmosphere
It is tied at the light expansion that sheet resistance is 160 ± 20 ohm/sq；
3. ion implanting -2: using phosphorus implantation dosage for 4 × 1015 cm-2, acceleration voltage 6kV, second of phosphorus atoms note of progress
Enter；
Main purpose: in the phosphorus atoms of silicon wafer superficial face injection high dose, the laser in subsequent laser selective doping process
The injection phosphorus atoms of processing region are activated, and form the high phosphorus expansion of surface phosphorus doping density and tie, in further battery preparation flow
Metal grid lines cover laser treated regions in the process that metallizes, and form good metal-semiconductor Ohmic contact, promote battery
Fill factor.
4. laser doping: it is 30ohm/sq that laser treated regions phosphorus, which expands knot sheet resistance,；
5. cleaning: cleaning above-mentioned silicon wafer 15min, subsequent hydrofluoric acid clean silicon chip surface using 60 DEG C of hydrogen peroxide+hydrochloric acid (1:1)
Oxide layer.The mass concentration of hydrochloric acid is 10% or so.
Main purpose: the surface phosphorus not injected in -2 step of ion implanting of laser treated regions in step 3 is washed
Atom retains the light expansion knot formed in -1 step of ion implanting.
Compared with prior art, the beneficial effects of the present invention are:
One, the area the Qing Kuo sheet resistance uniformity formed is good；
Two, the area Qing Kuo surface Effective Doping concentration is low, and auger recombination is low, and open-circuit voltage is high；
Three, its doping concentration of the area Qing Kuo is more gentle with change in depth, and near the space-charge region of PN junction, effective phosphorus doping is dense
Degree is higher, and the space-charge region two sides potential difference of formation is higher, is conducive to PN junction and is effectively divided, forms high open-circuit voltage；
Four, re-expand area's sheet resistance is low, and metal is low with silicon chip surface contact resistance, and battery fill factor is high.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is production technological process of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the present invention, if not refering in particular to, all parts, percentage are unit of weight, used equipment and raw material etc.
It is commercially available or commonly used in the art.Method in following embodiments is unless otherwise instructed the normal of this field
Rule method.
Embodiment 1:
A kind of ion implanting phosphorus diffusion method of matching laser selective doping, the process flow chart of this method is as shown in Figure 1, institute
Specific step is as follows for the method stated:
1, ion implanting -1: the P-type wafer surface after making herbs into wool carries out first time ion implanting, and selecting phosphorus implantation dosage first is 9
×1014 cm-2, acceleration voltage 12kV, formation first time phosphorus atoms implanted layer.
Main purpose: injecting the P elements of low dosage, in subsequent annealing process formed surface doping phosphorus concentration it is low but
The light expansion of junction depth depth is tied.Meanwhile near the space-charge region that PN junction is formed, phosphorus doping density is higher, enhances point of PN junction
Light efficiency.
2, annealing+knot: the phosphorus atoms being infused in active ions injection -1 in high annealing boiler tube in silicon wafer.Using
850 DEG C, 30min annealing process, whole process is in 10 L/min N2With 1 L/min O2Annealing in atmosphere, forming sheet resistance is 160 ohm/
The light expansion of sq is tied.
3, ion implanting -2: use phosphorus implantation dosage for 4 × 1015 cm-2, acceleration voltage 7kV, second of phosphorus original of progress
Son injection.
Main purpose: in the phosphorus atoms of silicon wafer superficial face injection high dose, in subsequent laser selective doping process
The injection phosphorus atoms of laser treated regions are activated, and form the high phosphorus of surface phosphorus doping density and expand knot, further battery preparation flow
In metallization process in metal grid lines cover laser treated regions, form good metal-semiconductor Ohmic contact, promote electricity
The fill factor in pond.It is 30ohm/sq that laser treated regions phosphorus, which expands knot sheet resistance,.
4, laser doping: laser selective activates the phosphorus of second of ion implanting, forms subsequent metallisation grid line contact zone
The re-expand area in domain, re-expand area's sheet resistance are 20-40ohm/sq；
5, it cleans: cleaning above-mentioned silicon wafer 15min, subsequent hydrofluoric acid clean using 60 DEG C of hydrogen peroxide+hydrochloric acid (volume ratio 1:1)
Silicon chip surface oxide layer.The mass concentration of hydrochloric acid is 10%.
Main purpose: the surface phosphorus not injected in -2 step of ion implanting of laser treated regions in step 3 is washed
Atom retains the light expansion knot formed in -1 step of ion implanting.
Comparative example uses phosphorus thermal diffusion method selective emitter (BaseLine group)
1, thermal diffusion: the P-type wafer surface after making herbs into wool carries out phosphorus doping thermal diffusion；Form the phosphorus that sheet resistance is 110-130ohm/sq
Diffusion junctions expand knot as light.
2, laser doping: laser selective activation forms the re-expand area of subsequent metallisation grid line contact area, re-expands area side
Resistance is 50-60ohm/sq；
3, it cleans: using hydrofluoric acid and hydrochloric acid (volume ratio 1:1) cleaning silicon chip 5min, remove the phosphorosilicate glass on surface, formed
Complete SE structure.The mass concentration of hydrochloric acid is 10%.
By process above step, complete ion implanting phosphorus diffusion selective emitter is obtained, through transpassivation, screen printing
Brush, sintering process are prepared into solar battery, and battery performance test is as shown in the table, and wherein Baseline is using phosphorus thermal expansion
It dissipates, laser selective adulterates to form phosphorus diffusion selective emitter, by through transpassivation, silk-screen printing, sintering process is prepared into
The performance parameter of solar battery is shown in Table 1.
Table 1
| Group | Voc | Isc | FF | Eta |
| BaseLine | 672mV | 40.15mA/cm2 | 81.52% | 21.92% |
| Embodiment 1 | 680mV | 40.18mA/cm2 | 81.74% | 22.33% |
As shown in Table 1, relative to BaseLine group, using ion implantation technology of the invention, battery open circuit voltage (Voc) has
The promotion of 8mV, while fill factor (FF) also has 0.22% promotion, battery conversion efficiency (Eta) have 0.41% to be obviously improved.
Above-mentioned embodiment is only a preferred solution of the present invention, not the present invention is made in any form
Limitation, there are also other variations and modifications on the premise of not exceeding the technical scheme recorded in the claims.
Claims (5)
1. a kind of ion implanting phosphorus diffusion method of matching laser selective doping, it is characterised in that this method includes following step
It is rapid:
1. the P-type wafer surface first time ion implanting phosphorus after making herbs into wool, the phosphorus of selection injection low dosage, injection simultaneous selection are high
Acceleration voltage, the injection rate of phosphorus are 8 × 1014To 10 × 1014 cm-2, acceleration voltage 10-14kV；
2. activation+knot of annealing, keeps the phosphorus diffusion knot surface dopant concentration to be formed low, available phosphorus doping concentration distribution becomes with depth
Change is more gentle, forms the area Qing Kuo that sheet resistance is 140-180ohm/sq；
3. second of phosphonium ion injection: the phosphorus of this implantation dosage high phosphorus, the injection rate of phosphorus are 4 × 1015To 6 × 1015 cm-2, add
Fast voltage is 4-6KV, it is therefore an objective to form the phosphorus-diffused layer of high concentration in silicon wafer near surface；
4. laser doping: laser selective activates the phosphorus of second of ion implanting, forms subsequent metallisation grid line contact area
Area is re-expanded, re-expand area's sheet resistance is 20-40ohm/sq；
5. cleaning: washing the area Qing Kuo not by second of ion implanting of laser active containing phosphorous layer, ultimately form complete choosing
Selecting property phosphorus diffusion emitter.
2. the ion implanting phosphorus diffusion method of matching laser selective doping according to claim 1, it is characterised in that: step
Suddenly 2. annealing activation+knot detailed process is: the phosphorus being infused in active ions injection -1 in silicon wafer in high annealing boiler tube
Atom, using 850 ± 50 DEG C, the annealing process of 30 ± 5min, whole process is in 10 ± 2 L/min N2With 1 ± 0.2 L/min O2Atmosphere
Interior annealing is enclosed, the light expansion that sheet resistance is 160 ± 20 ohm/sq is formed and ties.
3. the ion implanting phosphorus diffusion method of matching laser selective doping according to claim 1, it is characterised in that: step
Suddenly the detailed process 5. cleaned is: using 60 ± 5 DEG C of hydrogen peroxide+hydrochloric acid cleaning silicon chip 15-20min, subsequent hydrofluoric acid clean
Silicon chip surface oxide layer.
4. the ion implanting phosphorus diffusion method of matching laser selective doping according to claim 3, it is characterised in that: double
The volume ratio of oxygen water and hydrochloric acid is 1:1-2, and the mass concentration of hydrochloric acid is 6-14%.
5. the ion implanting phosphorus diffusion method of matching laser selective doping according to claim 1, it is characterised in that should
Method specifically includes the following steps:
1. ion implanting -1: the P-type wafer surface after making herbs into wool carries out first time ion implanting, and selecting phosphorus implantation dosage first is 9
×1014 cm-2, acceleration voltage 12kV, formation first time phosphorus atoms implanted layer；
2. annealing+knot: the phosphorus atoms being infused in active ions injection -1 in high annealing boiler tube in silicon wafer, using 850
± 50 DEG C, the annealing process of 30 ± 5min, whole process is in 10 ± 2 L/min N2With 1 ± 0.2 L/minO2Annealing in atmosphere, forms
The light expansion that sheet resistance is 160 ± 20 ohm/sq is tied；
3. ion implanting -2: using phosphorus implantation dosage for 4 × 1015 cm-2, acceleration voltage 6kV, second of phosphorus atoms note of progress
Enter；
4. laser doping: it is 30ohm/sq that laser treated regions phosphorus, which expands knot sheet resistance,；
5. cleaning: cleaning above-mentioned silicon wafer 15min, subsequent hydrofluoric acid clean silicon chip surface using 60 DEG C of hydrogen peroxide+hydrochloric acid (1:1)
Oxide layer.
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| CN111244226A (en) * | 2020-01-17 | 2020-06-05 | 浙江正泰太阳能科技有限公司 | Double-sided battery and manufacturing method thereof |
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|---|---|---|---|---|
| CN111244226A (en) * | 2020-01-17 | 2020-06-05 | 浙江正泰太阳能科技有限公司 | Double-sided battery and manufacturing method thereof |
| CN111244226B (en) * | 2020-01-17 | 2021-11-26 | 浙江正泰太阳能科技有限公司 | Double-sided battery and manufacturing method thereof |
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