CN110088912A - 隧穿场效应晶体管及其制造方法 - Google Patents
隧穿场效应晶体管及其制造方法 Download PDFInfo
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- CN110088912A CN110088912A CN201780080089.9A CN201780080089A CN110088912A CN 110088912 A CN110088912 A CN 110088912A CN 201780080089 A CN201780080089 A CN 201780080089A CN 110088912 A CN110088912 A CN 110088912A
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- 230000005669 field effect Effects 0.000 title claims abstract description 35
- 230000005641 tunneling Effects 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 67
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000007769 metal material Substances 0.000 claims description 17
- 238000004528 spin coating Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 4
- 238000006460 hydrolysis reaction Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 167
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- -1 phosphorus alkene Chemical class 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AFCIMSXHQSIHQW-UHFFFAOYSA-N [O].[P] Chemical compound [O].[P] AFCIMSXHQSIHQW-UHFFFAOYSA-N 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
一种隧穿场效应晶体管及其制造方法，该隧穿场效应晶体管包括：衬底层(21)；导电层(22)包括第一导电部(221)和第二导电部(222)，第一导电部(221)和第二导电部(222)覆盖在衬底层(21)的部分表面，第一导电部(221)的厚度大于第二导电部(222)的厚度；源区电极(23)覆盖在第一导电部(221)的外表面上；漏区电极(24)覆盖在第二导电部(222)远离第一导电部(221)的外表面上；第一绝缘层(25)位于衬底层(21)的上表面，且覆盖在源区电极(23)、导电层(22)和漏区电极(24)的外表面；栅极(26)覆盖在第一绝缘层(25)远离导电层(22)的表面上，且位于源区电极(23)与漏区电极(24)之间的空隙中；第二绝缘层(27)覆盖在第一绝缘层(25)和栅极(26)远离第一绝缘层(25)的表面上。所述隧穿场效应晶体管在提升器件的开态电流和开关比的同时，能够有效提高器件性能的均一性和可重复性。
Description
PCT国内申请，说明书已公开。
Claims (12)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/075275 WO2018157319A1 (zh) | 2017-02-28 | 2017-02-28 | 隧穿场效应晶体管及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110088912A true CN110088912A (zh) | 2019-08-02 |
| CN110088912B CN110088912B (zh) | 2021-08-13 |
Family
ID=63369593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780080089.9A Active CN110088912B (zh) | 2017-02-28 | 2017-02-28 | 隧穿场效应晶体管及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110088912B (zh) |
| WO (1) | WO2018157319A1 (zh) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140035040A1 (en) * | 2012-06-25 | 2014-02-06 | Commissariat à I'énergie atomique et aux énergies alternatives | Tunnel field effect transistor |
| KR20160096815A (ko) * | 2015-02-06 | 2016-08-17 | 서울대학교산학협력단 | 들려진 드레인 영역을 갖는 터널링 전계효과 트랜지스터 |
| CN106057880A (zh) * | 2015-04-07 | 2016-10-26 | 三星电子株式会社 | 包括二维材料的电子器件以及制造该电子器件的方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9748368B2 (en) * | 2013-07-03 | 2017-08-29 | University Of Calcutta | Tunnel field-effect transistor (TFET) with supersteep sub-threshold swing |
| CN104134695A (zh) * | 2014-07-15 | 2014-11-05 | 华为技术有限公司 | 隧穿场效应晶体管及隧穿场效应晶体管的制备方法 |
| CN106356405B (zh) * | 2016-09-06 | 2020-10-09 | 北京华碳元芯电子科技有限责任公司 | 异质结碳纳米管场效应晶体管及其制备方法 |
-
2017
- 2017-02-28 WO PCT/CN2017/075275 patent/WO2018157319A1/zh active Application Filing
- 2017-02-28 CN CN201780080089.9A patent/CN110088912B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140035040A1 (en) * | 2012-06-25 | 2014-02-06 | Commissariat à I'énergie atomique et aux énergies alternatives | Tunnel field effect transistor |
| KR20160096815A (ko) * | 2015-02-06 | 2016-08-17 | 서울대학교산학협력단 | 들려진 드레인 영역을 갖는 터널링 전계효과 트랜지스터 |
| CN106057880A (zh) * | 2015-04-07 | 2016-10-26 | 三星电子株式会社 | 包括二维材料的电子器件以及制造该电子器件的方法 |
Non-Patent Citations (1)
| Title |
|---|
| FAN W.CHEN 等: "thickness engineered tunnel field-effect transistors based on phosphorene", 《IEEE ELECTRON DEVICE LETTERS》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110088912B (zh) | 2021-08-13 |
| WO2018157319A1 (zh) | 2018-09-07 |
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