CN110085714B - DC light-emitting device and manufacturing method thereof - Google Patents
DC light-emitting device and manufacturing method thereof Download PDFInfo
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- CN110085714B CN110085714B CN201910488322.8A CN201910488322A CN110085714B CN 110085714 B CN110085714 B CN 110085714B CN 201910488322 A CN201910488322 A CN 201910488322A CN 110085714 B CN110085714 B CN 110085714B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 230000006911 nucleation Effects 0.000 claims abstract description 61
- 150000004767 nitrides Chemical class 0.000 claims abstract description 60
- 238000010899 nucleation Methods 0.000 claims abstract description 51
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 230000005525 hole transport Effects 0.000 claims description 24
- 239000011810 insulating material Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 13
- 239000007772 electrode material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 abstract description 33
- 230000008569 process Effects 0.000 abstract description 17
- 238000005530 etching Methods 0.000 abstract description 15
- 238000005520 cutting process Methods 0.000 abstract description 13
- 230000031700 light absorption Effects 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- -1 ITO Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Abstract
The application provides a direct current light emitting device and a manufacturing method thereof, and relates to the technical field of semiconductors. According to the direct current light-emitting device and the manufacturing method thereof, the nitride nucleation layer is used as a nucleation center to grow to obtain an electron transmission island-shaped structure, independent light-emitting units are formed through a selective epitaxy technology, and the light-emitting units are mutually separated. The light-emitting unit is not required to be divided by etching or cutting and other processes, so that the manufacturing process of the light-emitting device is effectively simplified, and the non-radiation composite center formed by etching or cutting the surface is obviously restrained. The process of forming each light-emitting unit simplifies the process flow because etching or cutting and other processes are not needed, and can obviously inhibit the non-radiative composite center formed by the etched or cut surface, improve the light-emitting intensity of the device and slow down the temperature rise of the device. Meanwhile, in the manufacturing process, the growth substrate is removed, the support substrate is used for supporting, light absorption of the growth substrate is avoided, and the light-emitting rate of the device is improved.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a direct current light emitting device and a manufacturing method thereof.
Background
The LED LED (Light Emitting Diode) is a conventional light emitting device, and the conventional LED is a low-voltage dc device, and when the LED is driven by a mains supply or other higher-voltage power source, a complex driving circuit is required to convert the voltage of the power source into a low-voltage dc power source required by the LED, which significantly increases the cost of the system and is not beneficial to popularization and use of the LED.
LEDs can be fabricated using silicon substrates, but the silicon substrate is opaque and absorbs light emitted from the LED epitaxial layers thereon, resulting in a significant reduction in light extraction efficiency. The plurality of light emitting islands on the silicon substrate are formed by etching or dicing to form non-radiative recombination centers. When the non-radiative recombination center is formed, redundant energy is transferred to nearby atoms when electrons and holes are subjected to non-radiative recombination, so that the kinetic energy of the atoms is increased, the temperature of the LED is increased, and the luminous intensity of the LED is weakened.
Disclosure of Invention
In view of the foregoing, the present application provides a direct current light emitting device and a method for manufacturing the same.
The technical scheme provided by the application is as follows:
a method of fabricating a direct current light emitting device, comprising:
providing a growth substrate;
fabricating a nitride nucleation layer and a first insulating layer based on the growth substrate;
growing nitride materials by taking the nitride nucleation layer as a nucleation center based on the nitride nucleation layer and the first insulating layer to form a plurality of mutually independent electron transport island structures;
sequentially manufacturing a radiation composite layer and a hole transport layer based on the electron transport island structure;
manufacturing a P-type electrode layer on one side of the hole transport layer far away from the radiation composite layer and one side of the first insulating layer far away from the nitride nucleation layer;
manufacturing an N-type electrode layer and a connecting layer based on the P-type electrode layer, or manufacturing the connecting layer based on the P-type electrode layer, wherein the N-type electrode layer connects a plurality of electron transmission island structures;
bonding and connecting a supporting substrate based on the connecting layer;
removing the growth substrate;
the P electrode and the N electrode for forming the direct current light emitting device specifically comprise:
and when the N-type electrode layer and the connecting layer are manufactured on one side of the P-type electrode layer, and when the connecting layer is made of an insulating material, manufacturing a first electrode connected with the P-type electrode layer, and manufacturing a second electrode connected with the N-type electrode layer to form the direct current light emitting device, wherein the first electrode is used as a P electrode of the direct current light emitting device, and the second electrode is used as an N electrode of the direct current light emitting device.
Further, the step of fabricating a nitride nucleation layer and a first insulating layer based on the growth substrate includes:
fabricating a nitride material based on the growth substrate, forming the nitride nucleation layer;
manufacturing an insulating material on one side of the nitride nucleation layer far away from the growth substrate to form the first insulating layer;
and removing a part of the first insulating layer to form a groove exposing the nitride nucleation layer, wherein the exposed nitride nucleation layer serves as a nucleation center of the electron transport island structure.
Further, the step of fabricating a nitride nucleation layer and a first insulating layer based on the growth substrate includes:
forming the first insulating layer by manufacturing an insulating material based on the growth substrate;
and removing a part of the first insulating layer, exposing the substrate, and manufacturing a nitride material based on the exposed substrate to form the nitride nucleation layer.
Further, when an N-type electrode layer and a connection layer are fabricated based on the P-type electrode layer, and the connection layer and the supporting substrate are made of conductive materials, the step of forming the P-electrode and the N-electrode of the direct current light emitting device includes:
and manufacturing a third electrode connected with the P-type electrode layer, wherein the N-type electrode layer connects a plurality of electron transmission island structures to form a direct current light emitting device, the third electrode is used as the P electrode of the direct current light emitting device, and the supporting substrate is used as the N electrode of the direct current light emitting device.
Further, the step of fabricating a third electrode connected to the P-type electrode layer includes:
a third electrode groove is formed in one side, far away from the first insulating layer, of the nitride nucleation layer, and penetrates through the nitride nucleation layer and the first insulating layer to expose the P-type electrode layer;
and manufacturing electrode materials in the third electrode groove, and forming the third electrode so as to enable the third electrode to be connected with the P-type electrode layer.
Further, the step of manufacturing the N-type electrode layer and the connection layer based on the P-type electrode layer includes:
removing a part of the P-type electrode layer, the hole transport layer and the radiation composite layer corresponding to each electron transport island structure to form a first groove exposing the electron transport island structure;
manufacturing an insulating material to cover the P-type electrode layer and the side wall of the first groove to form a second insulating layer;
manufacturing an electrode material connected with the electron transmission island-shaped structure exposed from the bottom of the first groove, forming an N-type electrode layer covering the second insulating layer, wherein the P-type electrode layer and the N-type electrode layer are insulated through the second insulating layer;
and manufacturing the connecting layer based on the N-type electrode layer.
Further, when only the connection layer and the support substrate are fabricated on one side of the P-type electrode layer and the connection layer is made of an insulating material, the step of forming the P-electrode and the N-electrode of the dc light emitting device includes:
and manufacturing a fourth electrode connected with the P-type electrode layer, and manufacturing a fifth electrode connected with the electron transmission island-shaped structure to form the direct current light emitting device, wherein the fourth electrode is used as the P electrode of the direct current light emitting device, and the fifth electrode is used as the N electrode of the direct current light emitting device.
Further, the step of fabricating a fourth electrode connected to the P-type electrode layer includes:
removing the nitride nucleation layer and exposing the electron transport island structure;
a fourth electrode groove is formed in one side, away from the P-type electrode layer, of the first insulating layer, and the P-type electrode layer is exposed;
manufacturing electrode materials in the fourth electrode groove to form the fourth electrode so as to enable the fourth electrode to be connected with the P-type electrode layer;
the step of fabricating a fifth electrode connected to the electron transport island structure includes:
and manufacturing an electrode material connected with the exposed electron transport island structure to form the fifth electrode.
Further, when only the connection layer and the support substrate are formed on one side of the P-type electrode layer and the connection layer and the support substrate are made of conductive materials, the step of forming the P-electrode and the N-electrode of the direct current light emitting device includes:
and manufacturing a sixth electrode connected with the electron transmission island structure, wherein a supporting substrate made of a conductive material is used as a P electrode of the direct current light emitting device, and the sixth electrode is used as an N electrode of the direct current light emitting device.
Further, the step of fabricating a sixth electrode connected to the electron transport island structure includes:
removing the nitride nucleation layer and at least a portion of the first insulating layer, exposing the electron transport island structure;
and manufacturing an electrode material connected with the exposed electron transport island structure, and forming the sixth electrode.
The present application also provides a direct current light emitting device, comprising: at least one light emitting unit, first insulating layer, tie layer, supporting substrate, P electrode and N electrode, the light emitting unit includes electron transport island structure, radiation composite layer, hole transport layer and P type electrode layer, wherein:
the radiation composite layer covers the surface of the electron transmission island structure;
the hole transport layer covers the surface of the radiation composite layer;
the P-type electrode layer covers the surface of the hole transport layer, the P-type electrode layers corresponding to the adjacent light emitting units are connected, and the electron transport island structures corresponding to the adjacent light emitting units are connected with each other;
the P electrode is connected with the P electrode layer, and the N electrode is connected with the electron transmission island structure;
the connecting layer covers the light emitting unit, and the supporting substrate is located at one side of the connecting layer away from the light emitting unit.
According to the direct current light-emitting device and the manufacturing method thereof, the nitride nucleation layer is used as a nucleation center to grow to obtain an electron transmission island-shaped structure, independent light-emitting units are formed through a selective epitaxy technology, and the light-emitting units are mutually separated. The light-emitting unit is not required to be divided by etching or cutting and other processes, so that the manufacturing process of the light-emitting device is effectively simplified, and the non-radiation composite center formed by etching or cutting the surface is obviously restrained. The light-emitting units are formed without being divided by etching or cutting and other processes, so that the process is effectively simplified, the non-radiation composite center formed by etching or cutting the surface is obviously restrained, the light-emitting intensity of the device is improved, and the temperature rise of the device is slowed down. In the manufacturing process, the growth substrate is removed, the support substrate is used for supporting, light absorption of the growth substrate is avoided, and the light-emitting rate of the device is improved.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a dc light emitting device according to an embodiment of the present application.
Fig. 2 is a schematic cross-sectional view of a device corresponding to step S101 in a method for manufacturing a direct current light emitting device according to an embodiment of the present application.
Fig. 3 and fig. 4 are schematic cross-sectional views corresponding to step S102 in a method for manufacturing a dc light emitting device according to an embodiment of the present application.
Fig. 5 is a schematic cross-sectional view of a device corresponding to a P-type electrode layer prepared in the method for manufacturing a direct current light emitting device according to the embodiment of the present application.
Fig. 6 is a schematic cross-sectional view of a device corresponding to a second insulating layer fabricated in a method for fabricating a direct current light emitting device according to an embodiment of the present application.
Fig. 7 is a schematic cross-sectional view corresponding to an N-type electrode layer manufactured in the method for manufacturing a direct current light emitting device according to the embodiment of the present application.
Fig. 8 is a schematic cross-sectional view of a connection layer manufactured based on the structure shown in fig. 7 in a manufacturing method of a direct current light emitting device according to an embodiment of the present application.
Fig. 9 is a schematic structural diagram of a connection layer directly formed on a surface of a P-type electrode layer in a method for manufacturing a direct current light emitting device according to an embodiment of the present application.
Fig. 10 is a schematic cross-sectional view of a connection support substrate based on the structure shown in fig. 8 in a method for manufacturing a dc light emitting device according to an embodiment of the present application.
Fig. 11 is a schematic cross-sectional view of a connection support substrate based on the structure shown in fig. 9 in a method for manufacturing a dc light emitting device according to an embodiment of the present application.
Fig. 12 and 13 are schematic cross-sectional views of a method for manufacturing a dc light emitting device according to an embodiment of the present application, in which a growth substrate is removed.
Fig. 14 and 15 are schematic cross-sectional views of a direct current light emitting device according to an embodiment of the present application after removing a growth substrate.
Fig. 16 is a schematic cross-sectional view of a first electrode trench fabricated in a method for fabricating a dc light emitting device according to an embodiment of the present application.
Fig. 17 is a schematic cross-sectional view of a first electrode and a second electrode after being fabricated in the method for fabricating a direct current light emitting device according to an embodiment of the present application.
Fig. 18 is a schematic cross-sectional view of a third electrode trench fabricated in a method for fabricating a dc light emitting device according to an embodiment of the present disclosure.
Fig. 19 is a schematic cross-sectional view of a dc light-emitting device according to an embodiment of the present disclosure after the third electrode is fabricated.
Fig. 20 to 22 are schematic cross-sectional views of a fourth electrode manufactured in a method for manufacturing a dc light emitting device according to an embodiment of the present application.
Fig. 23 is a schematic cross-sectional view of a dc light-emitting device according to an embodiment of the present disclosure after the sixth electrode is fabricated.
Fig. 24 to 27 are schematic diagrams of a dc light emitting device according to an embodiment of the present application.
Icon: 101-a growth substrate; 102-a nitride nucleation layer; 103-a first insulating layer; 104-electron transport island structure; 105-radiation recombination layer; 106-a hole transport layer; 107-P type electrode layer; 109-a second insulating layer; a 111-N type electrode layer; 112-a first groove; 201-a connection layer; 202-supporting a substrate; 203-a first electrode; 204-a second electrode; 205-a third electrode; 206-a fourth electrode; 207-fifth electrode; 208-sixth electrode; 231-a first electrode slot; 241-second electrode grooves; 232-a third electrode slot; 233-fourth electrode slot; 301-P electrode; 302-N electrode.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
As described in the background, LEDs can be fabricated using silicon substrates, which provide many advantages, including but not limited to: the silicon substrate has low cost, and can realize a large size, while the traditional sapphire or silicon carbide substrate has a relatively small size; the silicon material processing technology is rich, and a complex structure can be realized; however, silicon substrate materials also present significant challenges in fabricating LEDs, important drawbacks include: the silicon substrate is opaque and absorbs light emitted from the GaN LED epitaxial layers thereon, resulting in a significant reduction in light extraction efficiency. The silicon substrate and the GaN-based epitaxial layer have large lattice and thermal mismatch, so that large internal stress exists in the epitaxial wafer during and after growth, and the problems of cracking of the epitaxial wafer, cracking of the epitaxial layer and the like are easily caused. The conventional LED manufacturing method is to grow a uniform and complete GaN-based LED epitaxial layer on a silicon substrate, and the effect caused by the internal stress is quite remarkable because the epitaxial film is completely covered on the surface of the silicon substrate. Meanwhile, if an LED with an electrical structure such as AC/HV is to be realized, the traditional method is to manufacture and form LED islands containing P/N electrodes by etching and the like, and then form the AC/HV LED structure by a specific interconnection mode on each island. But the silicon substrate has better electric conductivity, and when forming an interconnection structure between each island, attention is required to be paid to realizing electric insulation with the silicon substrate, so that the process cost and difficulty are increased.
The embodiment of the application provides a manufacturing method of a direct current light emitting device, as shown in fig. 1, comprising the following steps.
Step S101, as shown in fig. 2, a growth substrate 101 is provided.
The growth substrate 101 may be a sapphire substrate, a silicon substrate or other substrate, and the material of the growth substrate 101 is not limited in the embodiments of the present application.
Step S102, as shown in fig. 3 and 4, of fabricating a nitride nucleation layer 102 and a first insulating layer 103 based on the growth substrate 101.
When different materials of growth substrates are selected, the steps of preparing the nitride nucleation layer 102 and the first insulating layer 103 are different, and the relative positional relationship between the prepared nitride nucleation layer 102 and the first insulating layer 103 is different to obtain the structure shown in fig. 3 and 4. In fig. 2, the nitride nucleation layer 102 is located in a recess formed in the first insulating layer 103, and there is no nitride nucleation layer 102 between the substrate and the first insulating layer 103. In fig. 4, a nitride nucleation layer 102 is formed on the surface of a growth substrate 101, and an electron transporting island structure 104 is grown by using the exposed nitride nucleation layer 102 as a nucleation center through a via hole formed in a first insulating layer 103.
In step S103, based on the nitride nucleation layer 102 and the first insulating layer 103, a nitride material is grown with the nitride nucleation layer 102 as a nucleation center, so as to form a plurality of mutually independent electron transport island structures 104.
The nitride nucleation layer 102 may be made of a group iii nitride material, and the first insulating layer 103 may be made of an insulating material such as silicon dioxide or silicon nitride. The plurality of electron transport islands 104 are isolated from one another.
Step S104, manufacturing a radiation composite layer 105 and a hole transport layer 106 based on the electron transport island structure 104.
In step S105, a P-type electrode layer 107 is formed on the hole transport layer 106 away from the radiation recombination layer 105 and the first insulating layer 103 away from the nitride nucleation layer 102.
As shown in fig. 5, each electron transport island 104 has a corresponding radiation recombination layer 105 and hole transport layer 106, and a p-type electrode layer 107 covers the surface of the hole transport layer 106, while covering the surface of the first insulating layer 103 between the plurality of electron transport islands 104. In this way, the P-type electrode layers 107 corresponding to the respective electron transport island structures 104 are in a state of being connected to each other.
Step S106, manufacturing an N-type electrode layer 111 and a connection layer 201 based on the P-type electrode layer 107, or manufacturing the connection layer 201 based on the P-type electrode layer 107, wherein the N-type electrode layer 111 connects the plurality of electron transport island structures 104.
After the P-type electrode layer 107 is fabricated, different fabrication processes may be used according to different structures of the dc light emitting device. The N-type electrode layer 111 and the connection layer 201 may be formed based on the P-type electrode layer 107, or the connection layer 201 may be formed directly based on the P-type electrode layer 107.
In detail, when the N-type electrode layer 111 and the connection layer 201 are fabricated based on the P-type electrode layer 107, a portion of the P-type electrode layer 107, the hole transport layer 106, and the radiation recombination layer 105 corresponding to each electron transport island 104 may be removed first, and a first groove 112 exposing the electron transport island 104 may be formed. As shown in fig. 6, an insulating material is formed to cover the P-type electrode layer 107 and the sidewalls of the first recess 112, thereby forming a second insulating layer 109. Then, as shown in fig. 7, an electrode material connected to the electron transport island 104 exposed at the bottom of the first recess 112 is formed to cover the N-type electrode layer 111 of the second insulating layer 109, and the P-type electrode layer 107 and the N-type electrode layer 111 are insulated by the second insulating layer 109. As shown in fig. 8, the connection layer 201 is formed based on the N-type electrode layer 111. The P-type electrode layer 107 and the N-type electrode layer 111 may be made of a transparent conductive material such as ITO, or a material having a high reflectance such as silver, aluminum, or the like. In the embodiment of the present application, the P-type electrode layers 107 corresponding to the respective electron transport island structures 104 are connected to each other, and the N-type electrode layers 111 corresponding to the respective electron transport island structures 104 are also connected to each other, so that the case of parallel connection of electrodes is formed, and a basic structure of the direct current light emitting device is formed. The connection layer 201 covers the entire surface of the N-type electrode layer 111, and the connection layer 201 serves as a base for subsequent bonding connection of the support substrate 202.
In another embodiment, instead of forming the N-type electrode layer 111 on the surface of the P-type electrode layer 107, the connection layer 201 may be formed directly on the surface of the P-type electrode layer 107 as shown in fig. 9.
Step S107, bonding and connecting the support substrate 202 based on the connection layer 201.
After the connection layer 201 is completed, as shown in fig. 10 and 11, the connection support substrate 202 may be bonded to the surface of the connection layer 201, fig. 10 being the connection support substrate 202 bonded based on the structure shown in fig. 8, and fig. 11 being the connection support substrate 202 bonded based on the structure shown in fig. 9. The growth substrate 101 serves as a growth foundation for the aforementioned structure, and the support substrate 202 serves as a support structure for subsequent structures.
Step S108, as shown in fig. 12 and 13, of removing the growth substrate 101.
Fig. 12 is a view showing the removal of the growth substrate 101 of the structure shown in fig. 10, and fig. 13 is a view showing the removal of the growth substrate 101 of the structure shown in fig. 11. The specific removal process is not limited in this application, and after removing the growth substrate 101, the structures shown in fig. 14 and 15 may be obtained, respectively.
And step S109, forming a P electrode and an N electrode of the direct current light emitting device.
In the preparation process of forming the P electrode and the N electrode, specific manufacturing processes may be different depending on materials of the connection layer 201 and the support substrate 202.
In detail, in one embodiment, when the N-type electrode layer 111 and the connection layer 201 are formed on the P-type electrode layer 107 side, and when the connection layer 201 is made of an insulating material, that is, when the connection layer 201 is made of an insulating material in the structure shown in fig. 14, the first electrode 203 connected to the P-type electrode layer 107 may be formed first, and the second electrode 204 connected to the N-type electrode layer 111 may be formed, so that the dc light emitting device may be formed, the first electrode 203 may be used as the P electrode of the dc light emitting device, and the second electrode 204 may be used as the N electrode of the dc light emitting device. In the process of forming the first electrode 203, as shown in fig. 16, a portion of the nitride nucleation layer 102 may be removed, then a first electrode groove 231 penetrating through the first insulating layer 103 may be opened, and similarly, in the process of forming the second electrode 204, a second electrode groove 241 penetrating through the first insulating layer 103 and the P-type electrode layer 107 may be formed, the P-type electrode layer 107 and the N-type electrode layer 111 may be exposed, and then the first electrode 203 connected to the exposed P-type electrode layer 107 and the second electrode 204 connected to the N-type electrode layer 111 may be formed, thereby obtaining the structure shown in fig. 17. An insulating material may be formed on the sidewalls of the second electrode trench 241 to insulate the second electrode 204 from the P-type electrode layer 107. In this way, when the N-type electrode layer 111 and the connection layer 201 are formed on the P-type electrode layer 107 side, and when the connection layer 201 is made of an insulating material, the first electrode 203 serves as a P-electrode, and the second electrode 204 serves as an N-electrode of the dc light emitting device.
In another embodiment, when the N-type electrode layer 111 and the connection layer 201 are fabricated based on the P-type electrode layer 107 and the connection layer 201 and the support substrate 202 are conductive materials, the step of forming the P-electrode and the N-electrode of the dc light emitting device includes: a third electrode 205 connected to the P-type electrode layer 107 is fabricated, the N-type electrode layer 111 connects the plurality of electron transport islands 104 to form a dc light emitting device, the first electrode 203 is used as a P-electrode of the dc light emitting device, and the support substrate 202 may be used as an N-electrode of the dc light emitting device when the connection layer 201 is made of a conductive material and the support substrate 202 is made of a conductive material. As shown in fig. 18, a third electrode 205 may be formed by first forming a third electrode groove 232 from a side of the nitride nucleation layer 102 away from the first insulating layer 103, where the third electrode groove 232 penetrates through the nitride nucleation layer 102 and the first insulating layer 103, and exposes the P-type electrode layer 107. An electrode material is formed in the third electrode groove 232, and the third electrode 205 is formed so that the third electrode 205 is connected to the P-type electrode layer 107, thereby obtaining a structure as shown in fig. 19.
In another embodiment, when only the connection layer 201 and the support substrate 202 are formed on the P-type electrode layer 107 side and the connection layer 201 is made of an insulating material, the second insulating layer 109 is not formed on the surface of the P-type electrode layer 107, and the N-type electrode layer 111 is not formed, that is, the P-electrode and the N-electrode are formed for the structure shown in fig. 15, and the step of forming the P-electrode and the N-electrode of the dc light emitting device includes: the dc light emitting device is formed by forming a fourth electrode 206 connected to the P-type electrode layer 107 and forming a fifth electrode 207 connected to the electron transport island structure 104, wherein the fourth electrode 206 is used as a P electrode of the dc light emitting device, and the fifth electrode 207 is used as an N electrode of the dc light emitting device.
The step of fabricating the fourth electrode 206 connected to the P-type electrode layer 107 includes: as shown in fig. 20, the nitride nucleation layer 102 is removed, exposing the electron transport island structure 104. As shown in fig. 21, a fourth electrode groove 233 is formed on a side of the first insulating layer 103 away from the P-type electrode layer 107, so that the P-type electrode layer 107 is exposed. As shown in fig. 22, an electrode material is formed in the fourth electrode trench 233, the fourth electrode 206 is formed so that the fourth electrode 206 is connected to the P-type electrode layer 107, and an electrode material connected to the exposed electron transport island structure 104 is formed, thereby forming the fifth electrode 207. In the device structure shown in fig. 22, the fourth electrode 206 is used as a P electrode of the dc light emitting device, and the fifth electrode 207 is used as an N electrode of the dc light emitting device.
In another embodiment, when only the connection layer 201 and the support substrate 202 are formed on the P-type electrode layer 107 side and the connection layer 201 and the support substrate 202 are made of conductive materials, the step of forming the P-electrode and the N-electrode of the dc light emitting device includes: a sixth electrode 208 of the electron transporting island structure 104 is fabricated, and the support substrate 202 of a conductive material is used as a P electrode of the dc light emitting device, and the sixth electrode 208 is used as an N electrode of the dc light emitting device. The sixth electrode 208 exposes the electron transporting island structure 104 by first removing the nitride nucleation layer 102 and removing at least a portion of the first insulating layer 103; then, an electrode material connected to the exposed electron transport island structure 104 is fabricated, and the sixth electrode 208 is formed, so as to obtain the structure shown in fig. 23.
In summary, by the above-described manufacturing method, the direct current light emitting device shown in fig. 17, 19, 22, and 23 can be manufactured.
According to the manufacturing method of the direct current light-emitting device, the nitride nucleation layer is used as a nucleation center to grow to obtain an electron transmission island structure, independent light-emitting units are formed through a selective epitaxy technology, and the light-emitting units are separated from each other. The light-emitting unit is not required to be divided by etching or cutting and other processes, so that the manufacturing process of the light-emitting device is effectively simplified, and the non-radiation composite center formed by etching or cutting the surface is obviously restrained. The light-emitting units are formed without being divided by etching or cutting and other processes, so that the process is effectively simplified, the non-radiation composite center formed by etching or cutting the surface is obviously restrained, the light-emitting intensity of the device is improved, and the temperature rise of the device is slowed down. In the manufacturing process, the growth substrate is removed, the support substrate is used for supporting, light absorption of the growth substrate is avoided, and the light-emitting rate of the device is improved.
The embodiment of the present application provides a direct current light emitting device, as shown in fig. 24 to 27, including: at least one light emitting unit, a first insulating layer 103, a connection layer 201, a P electrode 301, an N electrode 302, and a support substrate 202.
In detail, the light emitting unit includes an electron transport island structure 104, a radiation recombination layer 105, a hole transport layer 106, and a P-type electrode layer 107, wherein: the radiation recombination layer 105 covers the surface of the electron transport island structure 104; the hole transport layer 106 covers the surface of the radiation recombination layer 105; the P-type electrode layer 107 covers the surface of the hole transport layer 106, the P-type electrode layers 107 corresponding to adjacent light emitting units are connected, and the electron transport island structures 104 corresponding to adjacent light emitting units are connected with each other; the P electrode 301 is connected to the P-type electrode layer 107, and the N electrode 302 is connected to the electron transport island structure 104; the connection layer 201 covers the light emitting unit, and the support substrate 202 is located at a side of the connection layer 201 remote from the light emitting unit.
In the embodiment of the present application, the P-type electrode layers 107 corresponding to the light emitting units in the device are connected to each other, that is, a structure in which the light emitting units are connected in parallel is formed, so that a direct current light emitting device can be formed. As shown in fig. 24, the electron transport island 104 is grown with the nitride nucleation layer 102 as a nucleation center, and the nitride nucleation layer 102 may be made of a group iii nitride material on a growth substrate prepared in advance. The direct current light emitting device provided by the embodiment of the application is obtained by removing the growth substrate, wherein the growth substrate is removed after the support substrate 202 is manufactured, and the support substrate 202 is used as the integral support structure of the direct current light emitting device. The electron transport island structures 104 form three-dimensional mutually independent structures, and the electron transport island structures 104 of adjacent light emitting units are mutually insulated. The first insulating layer 103 may be silicon dioxide or silicon nitride.
In the embodiment of the present application, the specific structure of the direct current light emitting device may be different depending on the materials of the support substrate 202 and the connection layer 201 and whether the N-type electrode layer 111 is prepared.
As shown in fig. 24 and 25, the light emitting unit further includes a second insulating layer 109 and an N-type electrode layer 111, the second insulating layer 109 covers the P-type electrode layer 107, the N-type electrode layer 111 is connected to the electron transport island structure 104, the N-type electrode layers 111 of a plurality of light emitting units are connected, and the P-electrode 301 is connected to the P-type electrode layer 107 through the first insulating layer 103.
The second insulating layer 109 covers the P-type electrode layer 111, and the N-type electrode layer 111 has a structure penetrating the hole transport layer 106 and radiating the radiation layer and then connecting to the electron transport island structure 104, while the N-type electrode layer 111 covers the second insulating layer 109, and the second insulating layer 109 insulates the P-type electrode layer 111 and the N-type electrode layer 111. In the structure in which the N-type electrode layer 111 penetrates the hole transport layer 106 and the radiation emitting layer and then is connected to the electron transport island 104, the second insulating layer 109 also insulates the N-type electrode layer 111 from the hole transport layer 106 and the radiation emitting layer.
In the structure shown in fig. 24, the connection layer 201 is made of an insulating material, and the N electrode 302 is connected to the N electrode layer 111 after penetrating through the first insulating layer 103 and the P electrode layer 107 from the side of the first insulating layer 103 away from the P electrode layer 107. The N-type electrode layer 111 connects the plurality of electron transport island structures 104, so that the plurality of light emitting units form a parallel structure, the P-electrode 301 is connected to the P-type electrode layer 107, and the N-electrode 302 is connected to the N-type electrode layer 111, so that ohmic contact between the N-electrode 302 and the electron transport island structures 104 is realized, and a direct current light emitting device is formed.
As shown in fig. 25, unlike the structure shown in fig. 24, the connection layer 201 may be made of a conductive material, and the support substrate 202 may also be made of a conductive material, where the support substrate 202 serves as the N electrode of the dc light emitting device. When the connection layer 201 is made of a conductive material, the N-type electrode layer 111 can be directly connected to an external circuit through the connection layer 201 and the support substrate 202, and a separate N-electrode 302 is not required to be prepared, and in such a structure, the support substrate 202 serves as an N-electrode of the direct current light emitting device.
In the structures shown in fig. 24 and 25, the second insulating layer 109 and the N-type electrode layer 111 are prepared on the surface of the P-type electrode layer 107. In another embodiment, the thermal insulation layer and the N-type electrode layer 111 may not be prepared on the surface of the P-type electrode layer 107, and the connection layer 201 directly covers the P-type electrode layer 107. As shown in fig. 26, the connection layer 201 covers the P-type electrode layer 107, the connection layer 201 is made of an insulating material, the P-electrode 301 penetrates the first insulating layer 103 from a side of the first insulating layer 103 away from the P-type electrode layer 107 and then is connected to the P-type electrode layer 107, and the N-electrode 302 penetrates the first insulating layer 103 from a side of the first insulating layer 103 away from the P-type electrode layer 107 and then is connected to the electron-transporting island structure 104.
In the structure shown in fig. 26, since the connection layer 201 is made of an insulating material, the P electrode 301 and the N electrode 302 need to be separately prepared. The N electrode 302 is directly connected to the electron transport island structure 104 after removing the nitride nucleation layer 102, thereby forming a parallel structure of a plurality of light emitting cells to form a direct current light emitting device.
In another embodiment, as shown in fig. 27, the connection layer 201 covers the P-type electrode layer 107, the connection layer 201 is made of a conductive material, and when the support substrate 202 is made of a conductive material, the support substrate 202 is used as a P-electrode of the dc light emitting device, and the N-electrode 302 penetrates the first insulation layer 103 from a side of the first insulation layer 103 away from the P-type electrode layer 107, and then is connected to the electron transport island structure 104.
In the structure shown in fig. 27, since the connection layer 201 and the P-type electrode layer 107 are both made of conductive materials, it is unnecessary to prepare a separate P-electrode 301, and the P-type electrode layer 107 can be connected to an external circuit through the connection layer 201 and the support substrate 202, and the support substrate 202 serves as the P-electrode of the device. The structure of the N electrode 302 is the same as that of the N electrode 302 shown in fig. 26, thereby forming a direct current light emitting device.
In summary, in the dc light emitting device provided in the embodiment of the present application, each light emitting unit forms the electron transport island structure 104, and each electron transport island structure 104 has a sufficient distance therebetween and is separated from each other. The light-emitting units are formed without being divided by etching or cutting and other processes, so that the process is effectively simplified, the non-radiation composite center formed by etching or cutting the surface is obviously restrained, the light-emitting intensity of the device is improved, and the temperature rise of the device is slowed down. Meanwhile, the support substrate 202 is used as a support structure of an integral structure, so that light absorption of the growth substrate can be avoided, and the light extraction rate of the device can be improved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (6)
1. A method of fabricating a direct current light emitting device, comprising:
providing a growth substrate;
fabricating a nitride nucleation layer and a first insulating layer based on the growth substrate;
growing nitride materials by taking the nitride nucleation layer as a nucleation center based on the nitride nucleation layer and the first insulating layer to form a plurality of mutually independent electron transport island structures;
sequentially manufacturing a radiation composite layer and a hole transport layer based on the electron transport island structure;
manufacturing a P-type electrode layer on one side of the hole transport layer far away from the radiation composite layer and one side of the first insulating layer far away from the nitride nucleation layer;
manufacturing an N-type electrode layer and a connecting layer based on the P-type electrode layer, wherein the N-type electrode layer connects a plurality of electron transmission island structures; the connecting layer covers the whole surface of the N-type electrode layer;
bonding and connecting a supporting substrate based on the connecting layer;
removing the growth substrate;
the P electrode and the N electrode for forming the direct current light emitting device specifically comprise:
when the N-type electrode layer and the connecting layer are manufactured on one side of the P-type electrode layer, and when the connecting layer is made of an insulating material, a first electrode connected with the P-type electrode layer is manufactured, a second electrode connected with the N-type electrode layer is manufactured, the first electrode is used as a P electrode of the direct current light emitting device, and the second electrode is used as an N electrode of the direct current light emitting device;
the step of manufacturing the N-type electrode layer and the connecting layer based on the P-type electrode layer comprises the following steps:
removing a part of the P-type electrode layer, the hole transport layer and the radiation composite layer corresponding to each electron transport island structure to form a first groove exposing the electron transport island structure;
manufacturing an insulating material to cover the P-type electrode layer and the side wall of the first groove to form a second insulating layer;
manufacturing an electrode material connected with the electron transmission island-shaped structure exposed from the bottom of the first groove, forming an N-type electrode layer covering the second insulating layer, wherein the P-type electrode layer and the N-type electrode layer are insulated through the second insulating layer;
and manufacturing the connecting layer based on the N-type electrode layer.
2. The method of manufacturing a direct current light emitting device according to claim 1, wherein the step of manufacturing a nitride nucleation layer and a first insulating layer based on the growth substrate comprises:
fabricating a nitride material based on the growth substrate, forming the nitride nucleation layer;
manufacturing an insulating material on one side of the nitride nucleation layer far away from the growth substrate to form the first insulating layer;
and removing a part of the first insulating layer to form a groove exposing the nitride nucleation layer, and taking the exposed nitride nucleation layer as a nucleation center of the electron transport island structure.
3. The method of manufacturing a direct current light emitting device according to claim 1, wherein the step of manufacturing a nitride nucleation layer and a first insulating layer based on the growth substrate comprises:
forming the first insulating layer by manufacturing an insulating material based on the growth substrate;
and removing a part of the first insulating layer, exposing the substrate, and manufacturing the nitride nucleation layer formed by nitride material based on the exposed substrate.
4. The method of manufacturing a direct current light emitting device according to claim 3, wherein when an N-type electrode layer and a connection layer are formed based on the P-type electrode layer and the connection layer and a supporting substrate are conductive materials, the step of forming the P-electrode and the N-electrode of the direct current light emitting device comprises:
and manufacturing a third electrode connected with the P-type electrode layer, wherein the N-type electrode layer connects a plurality of electron transmission island structures to form a direct current light emitting device, the third electrode is used as the P electrode of the direct current light emitting device, and the supporting substrate is used as the N electrode of the direct current light emitting device.
5. The method of manufacturing a direct current light emitting device according to claim 4, wherein the step of manufacturing a third electrode connected to the P-type electrode layer comprises:
a third electrode groove is formed in one side, far away from the first insulating layer, of the nitride nucleation layer, and penetrates through the nitride nucleation layer and the first insulating layer to expose the P-type electrode layer;
and manufacturing electrode materials in the third electrode groove, and forming the third electrode so as to enable the third electrode to be connected with the P-type electrode layer.
6. A direct current light emitting device characterized by being applied to the manufacturing method of the direct current light emitting device according to any one of claims 1 to 5, comprising: at least one light emitting unit, first insulating layer, tie layer, supporting substrate, P electrode and N electrode, the light emitting unit includes electron transport island structure, radiation composite layer, hole transport layer and P type electrode layer, wherein:
the radiation composite layer covers the surface of the electron transmission island structure;
the hole transport layer covers the surface of the radiation composite layer;
the P-type electrode layer covers the surface of the hole transport layer, the P-type electrode layers corresponding to the adjacent light emitting units are connected, and the electron transport island structures corresponding to the adjacent light emitting units are connected with each other;
the P electrode is connected with the P electrode layer, and the N electrode is connected with the electron transmission island structure;
the connecting layer covers the light emitting unit, and the supporting substrate is located at one side of the connecting layer away from the light emitting unit.
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| JP2016039242A (en) * | 2014-08-07 | 2016-03-22 | シャープ株式会社 | Semiconductor light emitting element manufacturing method and semiconductor light emitting element |
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