CN110085581A - Highly integrated intelligent power module and air conditioner - Google Patents
Highly integrated intelligent power module and air conditioner Download PDFInfo
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- CN110085581A CN110085581A CN201910468315.1A CN201910468315A CN110085581A CN 110085581 A CN110085581 A CN 110085581A CN 201910468315 A CN201910468315 A CN 201910468315A CN 110085581 A CN110085581 A CN 110085581A
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- power module
- intelligent power
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- highly integrated
- bridge circuit
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 48
- 238000009434 installation Methods 0.000 claims description 67
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- 230000005611 electricity Effects 0.000 claims description 6
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 240000003550 Eusideroxylon zwageri Species 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
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- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- 230000017525 heat dissipation Effects 0.000 description 3
- FFEARJCKVFRZRR-UHFFFAOYSA-N methionine Chemical compound CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
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- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
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- 108010056664 N-acetyllactosaminide beta-1,6-N-acetylglucosaminyltransferase Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 Wherein Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Rectifiers (AREA)
Abstract
The present invention discloses a kind of highly integrated intelligent power module and air conditioner, and the highly integrated intelligent power module includes: first control signal receiving end and second control signal receiving end, receives the control signal of master controller output；The controlled end of compressor inversion bridge circuit, compressor inversion bridge circuit is connect with first control signal receiving end, and each phase inversion bridge arm circuit in compressor inversion bridge circuit includes gallium nitride type HEMT pipe；The controlled end of blower inversion bridge circuit, blower inversion bridge circuit is connect with second control signal receiving end, and each phase inversion bridge arm circuit in blower inversion bridge circuit includes gallium nitride type HEMT pipe.This invention simplifies the internal structure of intelligent power module and circuit structure, be conducive to intelligent power module space utilization rate, and reduce the volume of intelligent power module, reduces area occupied of the intelligent power module on electric-controlled plate.
Description
Technical field
The present invention relates to electronic circuit technology field, in particular to a kind of highly integrated intelligent power module and air conditioner.
Background technique
Intelligent power module wins increasing market with advantages such as its high integration, high reliability.Intelligent power mould
Driving IC and power device it has been generally integrated in block, when work, driving IC amplifies the logical signal that master controller exports
After export to power device, with driving power device work.However, driving IC is integrated in intelligent power module, need to increase
The volume of categorles power module is unfavorable for intelligent power module and develops to light, microminiaturization.
Summary of the invention
The main object of the present invention is to propose a kind of highly integrated intelligent power module and air conditioner, it is intended to reduce highly integrated intelligence
The volume of energy power module, reduces area occupied of the highly integrated intelligent power module on electric-controlled plate.
To achieve the above object, the present invention proposes a kind of highly integrated intelligent power module, the highly integrated intelligent power mould
Block includes:
First control signal receiving end and second control signal receiving end receive the control signal of master controller output；
Compressor inversion bridge circuit, the controlled end of the compressor inversion bridge circuit and the first control signal receiving end
It connects, each phase inversion bridge arm circuit in the compressor inversion bridge circuit includes gallium nitride type HEMT pipe；
Blower inversion bridge circuit, the controlled end of the blower inversion bridge circuit and the second control signal receiving end connect
It connects, each phase inversion bridge arm circuit in the blower inversion bridge circuit includes gallium nitride type HEMT pipe.
Optionally, the highly integrated intelligent power module further includes PFC power switching modules and for receiving master controller
The third of the control signal of output controls signal receiving end；
The PFC power switching modules include gallium nitride type HEMT pipe, the base stage of the gallium nitride type HEMT pipe with it is described
Third controls signal receiving end connection.
Optionally, the highly integrated intelligent power module further includes installation base plate, and a side surface of the installation base plate is set
It is equipped with multiple first installation positions, the second installation position and third installation position；
The PFC power switching modules are set on first installation position, and the blower inversion bridge circuit is set to institute
It states on the second installation position, the compressor inversion bridge circuit is set on the third installation position.
Optionally in a side surface of the installation base plate is additionally provided with the 4th installation position；
The highly integrated intelligent power module further includes rectifier bridge, and the rectifier bridge is set to the 4th installation position.
Optionally, the installation base plate includes:
Heat-radiating substrate；
Circuit-wiring layer is set to a side surface of the heat-radiating substrate, and the circuit-wiring layer is formed with installation position, with
It is installed for the PFC power switching modules, the compressor inversion bridge circuit and the blower inversion bridge circuit.
Optionally, the highly integrated intelligent power module further includes insulating layer, and the insulating layer is located in the circuit cloth
Between line layer and the heat-radiating substrate.
Optionally, the highly integrated intelligent power module further includes pin, and the pin is set to the circuit-wiring layer
On, the pin passes through metal wire and circuit-wiring layer and the PFC power switching modules, blower inversion bridge circuit and compressor
The electrical connection of inversion bridge circuit.
Optionally, the highly integrated intelligent power module further includes to the PFC power switching modules, the installation base
The encapsulating housing that plate, the blower inversion bridge circuit and the compressor inversion bridge circuit are packaged.
Optionally, the highly integrated intelligent power module further includes radiator, and the radiator is set to the installation base
Side of the backboard from the PFC power switching modules, blower inversion bridge circuit and compressor inversion bridge circuit.
The present invention also proposes a kind of air conditioner, including highly integrated intelligent power module as described above.
The present invention is by the way that blower inversion bridge circuit and compressor inversion bridge circuit to be integrated in same encapsulation to form height
Integrated Smart Power module, and each phase bridge arm driving circuit is adopted in blower inversion bridge circuit and compressor inversion bridge circuit
It is realized with gallium nitride type HEMT pipe, gallium nitride type HEMT pipe is directly controlled by master controller, and no setting is required, and driving IC will be led
The control signal of controller amplifies or the processing such as logical transition, is conducive to improve blower inversion bridge circuit and compressor inverse
Become the response speed of bridge circuit.And no setting is required drives IC, therefore can simplify the internal structure and electricity of bridge arm driving circuit
Line structure so as to reduce the volume and design difficulty of highly integrated intelligent power module, and reduces highly integrated intelligent function
The difficulty of arrangement and the wiring of each device in rate module is conducive to highly integrated intelligent power module space utilization rate, and
The volume for reducing highly integrated intelligent power module reduces area occupied of the highly integrated intelligent power module on electric-controlled plate.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the electrical block diagram of one embodiment of intelligent power module of the present invention；
Fig. 2 is the structural schematic diagram of one embodiment of intelligent power module of the present invention；
Fig. 3 is the structural schematic diagram of another embodiment of intelligent power module of the present invention.
Drawing reference numeral explanation:
| Label | Title | Label | Title |
| 100 | Master controller | 50 | Installation base plate |
| 200 | Intelligent power module | 41 | Circuit-wiring layer |
| 10 | Compressor inversion bridge circuit | 42 | Insulating layer |
| 20 | Blower inversion bridge circuit | 60 | Pin |
| 30 | PFC power switching modules | 70 | Encapsulating housing |
| 40 | Rectifier bridge | 80 | Radiator |
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
The present invention proposes a kind of highly integrated intelligent power module.
The intelligent power module, i.e. IPM (Intelligent Power Module) are suitable for the frequency converter of driving motor
And in various inverters, to realize the functions such as frequency control, metallurgical machinery, electric propulsion, servo-drive.It is particularly suitable for driving
The motor work of the compressors such as dynamic air-conditioning, refrigerator.Be applied to convertible frequency air-conditioner in when, due to frequency conversion drive in most cases its
Algorithm has been cured substantially, can be by function in order to save volume, improve anti-interference ability, the automatically controlled version design efforts would in mitigation periphery
Rate device is integrated on a wiring board, forms intelligent power module, and compared with traditional discrete scheme, intelligent power module is with its height
The advantages such as integrated level, high reliability win increasing market.When power module works, since power device mostly uses greatly
IGNT, metal-oxide-semiconductor realize that driving voltage is generally 12V or 15V, therefore between master controller and power module usually
It is serially connected with bridge arm driving circuit, also with the work of driving power device.In some highly integrated intelligent power module, usually can also it incite somebody to action
Power device or diode of pfc circuit etc. are integrated in intelligent power module together.
However, can will generally also drive PFC power device work in the intelligent power module for being integrated with PFC power device
Work can be integrated in bridge arm driving circuit, such as HVIC chip, thus HVIC chip to drive simultaneously inversion bridge circuit and
The driving signal of PFC power switching modules, this make the internal hardware circuit structure of HVIC chip and software algorithm program all compared with
For complexity.Also, control signal will be received by HVIC and carry out the processing such as boost, when will increase the response of control signal
Between, and reduce the response speed of each switching tube.In addition, the volume of HVIC chip is also required to increase, it is unfavorable for intelligent power module
In each device arrangement and wiring, space utilization rate is low, easy to increase so that the volume of intelligent power module is bigger than normal
Area occupied of the intelligent power module on electric-controlled plate.
To solve the above-mentioned problems, referring to Fig.1, in an embodiment of the present invention, which includes:
First control signal receiving end, second control signal receiving end receive the control signal that master controller 100 exports；
The controlled end of compressor inversion bridge circuit 10, the compressor inversion bridge circuit 10 connects with the first control signal
Receiving end connects, and each phase inversion bridge arm circuit in the compressor inversion bridge circuit 10 includes gallium nitride (GaN) type HEMT
Manage (High electron mobility transistor, high electron mobility transistor) namely GaN HEMT；
Blower inversion bridge circuit 20, the controlled end of the blower inversion bridge circuit 20 and the second control signal receiving end
It connects, each phase inversion bridge arm circuit in the blower inversion bridge circuit 20 includes gallium nitride type HEMT pipe.
In the present embodiment, the quantity of first control signal receiving end is six, respectively UHIN, VHIN, WHIN, ULIN,
VLIN,WLIN；UHIN, VHIN, WHIN, ULIN, VLIN, WLIN are respectively received master controller for first control signal receiving end
The logic input signal of 100 the first control terminal output, namely control signal, to drive blower to work；Second control signal connects
The quantity of receiving end is also six, respectively FUHIN, FVHIN, FWHIN, FULIN, FVLIN, FWLIN, and second control signal receives
End FUHIN, FVHIN, FWHIN, FULIN, FVLIN, FWLIN are respectively received patrolling for the second control output of master controller 100
Input signal, namely control signal are collected, to drive compressor operating.In some embodiments, intelligent power module further includes PFC
Control signal input PFCOUT.
Each phase bridge arm circuit namely bridge arm switching tube are equal in blower inversion bridge circuit 20 and compressor inversion bridge circuit 10
It is realized using gallium nitride type HEMT pipe, in the case where same conducting resistance, gallium nitride transistor, especially GaN HEMT's
Terminal Capacitance is lower, and without reverse recovery loss caused by body diode, can reduce switching loss.In addition, gallium nitride
The switching speed of transistor is faster than the switching speed of silicon substrate switching tube, thus overall switch performance be better than silicon substrate switching tube,
Higher switching frequency may be implemented, thus while keeping reasonable switching loss, hoisting power density and mapping.By
Use GaN HEMT as switching component in blower inversion bridge circuit 20 and compressor inversion bridge circuit 10, the two of GaN HEMT
Dimensional electron gas characteristic, GaN HEMT does not need FRD in parallel, and GaN HEMT gate pole charge is far fewer than IGBT so not having to grid
It is protected without connecting resistance.In compressor inversion bridge circuit 10, the grid of bridge arm HEMT pipe 101 and the first control in U phase
Signal receiving end UHIN connection；The grid of bridge arm HEMT pipe 102 is connect with first control signal receiving end VHIN in V phase；In W phase
The grid and first control signal receiving end WHIN of bridge arm HEMT pipe 103.The drain electrode of bridge arm HEMT pipe 101, V Xiang Shangqiao in U phase
The drain electrode of bridge arm HEMT pipe 103 is connected in the drain electrode of arm HEMT pipe 102, W phase, and the height as the intelligent power module 200
Voltage input end P, P generally meet 300V.In blower inversion bridge circuit 20, the grid of U phase lower bridge arm HEMT pipe 104 and the first control
The end signal receiving end ULIN；The grid of V phase lower bridge arm HEMT pipe 105 and the second control signal receiving end end VLIN；W phase lower bridge arm
The grid of HEMT pipe 106 and the second control signal receiving end end WLIN.The source electrode of the HEMT pipe 104 is as the intelligent power
The U phase low reference voltage end UN of module 200；The source electrode of the HEMT pipe 105 is low as the V phase of the intelligent power module 200
Voltage Reference end VN；W phase low reference voltage end WN of the emitter-base bandgap grading of the HEMT pipe 106 as the intelligent power module 200.U
The common end of bridge arm HEMT pipe 101 and U phase lower bridge arm HEMT pipe 104 is the output end of U phase higher-pressure region, bridge arm in V phase in phase
The common end of HEMT pipe 102 and V phase lower bridge arm HEMT pipe 105 is the output end of V phase higher-pressure region, 103 He of bridge arm HEMT pipe in W phase
The common end of V phase lower bridge arm HEMT pipe 106 is the output end of V phase higher-pressure region.The U phase higher-pressure region of compressor inversion bridge circuit 10 supplies
External capacitor C10 between electric power positive end UVB and U phase higher-pressure region power supply negative terminal UVS；V phase higher-pressure region power supply anode VVB
With V phase higher-pressure region power supply negative terminal VVS external capacitor C11；The power supply of W phase higher-pressure region power supply anode WVB and W phase higher-pressure region
External capacitor C12 between power supply negative terminal WVS.
In blower inversion bridge circuit 20, the grid of bridge arm HEMT pipe 201 and second control signal receiving end FUHIN in U phase
Connection；The grid of bridge arm HEMT pipe 202 is connect with second control signal receiving end FVHIN in V phase；Bridge arm HEMT pipe 203 in W phase
Grid and second control signal receiving end FWHIN.The drain electrode of bridge arm HEMT pipe 201 in U phase, bridge arm HEMT pipe 202 in V phase
The drain electrode of bridge arm HEMT pipe 203 is connected in drain electrode, W phase, and high voltage input terminal P, P as the intelligent power module 200
Generally meet 300V.In blower inversion bridge circuit 20, the grid of U phase lower bridge arm HEMT pipe 204 and first control signal receiving end
The end ULIN；The grid of V phase lower bridge arm HEMT pipe 205 and the second control signal receiving end end VLIN；W phase lower bridge arm HEMT pipe 206
Grid and the second control signal receiving end end WLIN.The source electrode of the HEMT pipe 204 is as the intelligent power module 200
U phase low reference voltage end FUN；V phase low reference voltage of the source electrode of the HEMT pipe 205 as the intelligent power module 200
Hold FVN；W phase low reference voltage end FWN of the emitter-base bandgap grading of the HEMT pipe 206 as the intelligent power module 200.U Xiang Shangqiao
The common end of arm HEMT pipe 201 and U phase lower bridge arm HEMT pipe 204 is bridge arm HEMT pipe in output end UV, the V phase of U phase higher-pressure region
The common end of 202 and V phase lower bridge arm HEMT pipe 205 is the output end of V phase higher-pressure region, in W phase under bridge arm HEMT pipe 203 and V phase
The common end of bridge arm HEMT pipe 206 is the output end of V phase higher-pressure region.The U phase higher-pressure region power supply of blower inversion bridge circuit 20
External capacitor C13 between the power supply negative terminal FUVS of anode FUVB and U phase higher-pressure region；V phase higher-pressure region power supply anode FVVB and V
Phase higher-pressure region power supply negative terminal FVVS external capacitor C14；The power supply of W phase higher-pressure region power supply anode FWVB and W phase higher-pressure region
External capacitor C15 between power supply negative terminal FWVS.
Each phase bridge arm circuit in blower inversion bridge circuit 20 and compressor inversion bridge circuit 10 in the present embodiment, namely
Bridge arm switching tube is all made of gallium nitride type HEMT pipe to realize, in the case where same conducting resistance, gallium nitride (GaN) crystal
Pipe, the Terminal Capacitance of especially GaN HEMT (high electron mobility transistor) is lower, and without anti-caused by body diode
To restoring to be lost, switching loss can reduce.In addition, switching speed the opening than silicon substrate switching tube of gallium nitride (GaN) transistor
Close speed it is fast, therefore overall switch performance be better than silicon substrate switching tube, higher switching frequency may be implemented, thus keeping
While reasonable switching loss, hoisting power density and mapping.Due to blower inversion bridge circuit 20 and compressor inverter bridge
Circuit 10 uses GaN HEMT as switching component, the two-dimensional electron gas characteristic of GaN HEMT, and GaN HEMT does not need parallel connection
FRD, and GaN HEMT gate pole charge is protected far fewer than IGBT so not having to grid and not having to connection resistance.And GaN
The driving voltage of HEMT is smaller, can directly use driving of the control signal of master controller 100 as GaN HMET, Ye Jifeng
Machine inversion bridge circuit 20 and compressor inversion bridge circuit 10 can directly be controlled by master controller 100, drive without bridge arm is arranged
Dynamic circuit, such as HVIC chip.
Master controller 100 is MCU, and logic controller, memory, data processor etc., and storage are integrated in MCU
On the memory and the software program and/or module that can run on the data processor, MCU is by operation or executes
The software program and/or module being stored in memory, and the data being stored in memory are called, export corresponding control
Signal is to blower inversion bridge circuit 20 and compressor inversion bridge circuit 10, so that blower inversion bridge circuit 20 and compressor inverter bridge
Gallium nitride type HEMT pipe in circuit 10 is according to the control signal conduction/shutdown received, to drive blower, compressor, motor
Equal loaded work pieces.
It is understood that the driving voltage of GaN HEMT is smaller, the control signal of master controller 100 can be directly used
Bridge arm circuit 10 and three-phase lower bridge arm circuit 20 are directly controlled by master controller in driving namely three-phase as GaN HMET
100, without the route of bridge arm circuit Yu master controller 100 can be shortened for bridge arm driving circuit, such as HVIC chip is arranged
Distance, and then the response speed for the control signal that each GaN HEMT exports master controller 100 in bridge arm circuit can be improved, and
And the shortening of route, the influence that the interference signal on route works to bridge arm circuit can also be reduced.
The master controller 100 of the present embodiment independently of intelligent power module 200 to outer, in practical application, master controller
100 and intelligent power module 200 be set on electric-controlled plate, and electrical connection is realized by wiring or conducting wire.Certainly at it
In his embodiment, master controller 100 be can integrate in intelligent power module 200, to improve the integrated level of intelligent power module.
Each monomer bare chip on three-phase in bridge arm circuit 10 and three-phase lower bridge arm circuit 20, can be integrated in an independent core respectively
After piece, and secondary encapsulation is carried out, then highly integrated intelligent power module is made in integrated setting.
The present invention is by the way that blower inversion bridge circuit 20 and compressor inversion bridge circuit 10 to be integrated in same encapsulation with shape
At highly integrated intelligent power module, and each phase bridge arm driving in blower inversion bridge circuit 20 and compressor inversion bridge circuit 10
Circuit is all made of gallium nitride type HEMT pipe to realize, gallium nitride type HEMT pipe is directly controlled by master controller 100, and no setting is required drives
Dynamic IC amplifies the control signal of master controller 100 or the processing such as logical transition, is conducive to improve blower inverter bridge
The response speed of circuit 20 and compressor inversion bridge circuit 10.And no setting is required drives IC, therefore can simplify bridge arm driving
The internal structure and circuit structure of circuit, so as to reduce the volume and design difficulty of highly integrated intelligent power module, and
And the difficulty of arrangement and the wiring of each device in the highly integrated intelligent power module of reduction, be conducive to highly integrated intelligent power mould
Block space utilization rate, and the volume of highly integrated intelligent power module is reduced, highly integrated intelligent power module is reduced in electric-controlled plate
On area occupied.
Referring to Fig.1, in one embodiment, the highly integrated intelligent power module further include PFC power switching modules 30 and
Third for receiving the control signal of master controller output controls signal receiving end, and the PFC power switching modules 30 include
The base stage of gallium nitride type HEMT pipe, the gallium nitride type HEMT pipe is connect with third control signal receiving end.
In the present embodiment, in PFC power switching modules 30, gallium nitride type HEMT pipe only can be integrated in intelligent power mould
In block, the pfc circuit that other components such as diode, inductance form can also be integrated in intelligent power module.PFC electricity
Road can be boost PFC circuit perhaps voltage-dropping type pfc circuit or buck-boost type pfc circuit.Pfc circuit by direct current into
The adjustment of row power factor (PF), direct current electricity output adjusted to inverter bridge circuit power input terminal, so that each power module drives phase
The loaded work piece answered.Direct current adjusted can also generate the operating voltage of the control chip such as 5V, for master controller 100 etc.
Circuit module provides operating voltage.Since PFC power switching modules 30 use GaN HEMT pipe 301 as switching component, GaN
The two-dimensional electron gas characteristic of HEMT, GaN HEMT do not need FRD in parallel, and GaN HEMT gate pole charge far fewer than IGBT so
Do not have to connection resistance without grid to be protected.The driving voltage of GaN HEMT is smaller, can be directly using master controller 100
Master controller 100 can be directly controlled by by controlling driving namely PFC power switching modules 30 of the signal as GaN HMET, and
It is not necessary that driving circuit is arranged for PFC power switching modules 30.So set, PFC power switching modules 30 and master control can be shortened
The route distance of device 100 processed, and then the GaN HEMT pipe 301 that PFC power switching modules 30 can be improved is defeated to master controller 100
The response speed of control signal out, and the shortening of route, can also reduce the interference signal on route to PFC power switch
The influence of the GaN HEMT work of module 30.Wherein, PFC power switching modules 30 using GaN HEMT pipe 301 source electrode PFC and
Drain electrode-VP is for accessing PFC inductance.
It should be noted that the switching frequency of PFC power switching modules 30 is much higher than blower inversion bridge circuit 20 and compression
The switching frequency of machine inversion bridge circuit 10, such as in practical application, the switching frequency of PFC power switching modules 30 is that blower is inverse
Become twice of bridge circuit 20 and each switching tube switching frequency of compressor inversion bridge circuit 10, if integrating PFC function in driving chip
The driving signal of rate switch module 30, PFC power switching modules 30 are easy fan inversion bridge circuit 20 and compressor inverter bridge
Circuit 10 brings serious electromagnetic interference, and influences the normal work of blower inversion bridge circuit 20 and compressor inversion bridge circuit 10
Make, the PFC power switching modules 30, blower inversion bridge circuit 20 and compressor inversion bridge circuit 10 of the present embodiment are directly controlled by
Master controller 100 can also reduce PFC power switching modules 30 to blower inversion bridge circuit 20 and compressor inversion bridge circuit 10
Interference.
Referring to Fig.1 in one embodiment, a side surface of the installation base plate 50 is additionally provided with the 4th installation position；
The highly integrated intelligent power module further includes rectifier bridge 40, and the rectifier bridge 40 is set to the 4th installation
Position.
Specifically, rectifier bridge 40 is set on the installation position of the circuit-wiring layer 51.The highly integrated intelligent power mould
Block further includes rectifier bridge 40, and the rectifier bridge 40 is set on the 4th installation position.
In the present embodiment, rectifier bridge 40 can combine realization using four stamp-mounting-paper diodes, and four stamp-mounting-paper diodes are simultaneously
Electrical connection is realized by circuit-wiring layer 51 and metal lead wire, and the rectifier bridge 40 of four stamp-mounting-paper diodes composition is by the exchange of input
Output is to power switch tube after electricity is converted into direct current, for power switch tube power supply.
Referring to Fig. 2 or Fig. 3, in one embodiment, the highly integrated intelligent power module further includes installation base plate 50, described
Highly integrated intelligent power module further includes installation base plate 50, and a side surface of the installation base plate 50 is provided with multiple first installations
Position, the second installation position and third installation position；
The PFC power switching modules 30 are set on first installation position, and the blower inversion bridge circuit 20 is arranged
In on second installation position, the compressor inversion bridge circuit 10 is set on the third installation position.
In above-described embodiment, installation base plate 10 includes: heat-radiating substrate (figure does not indicate)；
Circuit-wiring layer 51, is set to a side surface of the heat-radiating substrate 51, and the circuit-wiring layer 51 is formed with peace
Position is filled, for the PFC power switching modules 30, the compressor inversion bridge circuit 10 and the blower inversion bridge circuit 20 peace
Dress.
Further, the highly integrated intelligent power module further includes insulating layer 52, and the insulating layer 52 is located in described
Between circuit-wiring layer 51 and the heat-radiating substrate.
In the present embodiment, circuit-wiring layer 51 is provided on installation base plate 50, circuit-wiring layer 51 is according to highly integrated intelligence
The circuit design of power module forms corresponding route and corresponding for each electronics in power switch tube on installation base plate 50
The installation position of element installation, i.e. pad.Specifically, after insulating layer 52 being set on installation base plate 50, copper foil is laid on absolutely
In edge layer 52, and the copper foil is etched according to preset circuit design, to form circuit-wiring layer 51.By power switch tube
In each circuit module electronic component integration after the circuit-wiring layer 51 on heat-radiating substrate, can also be realized by metal wiring
Electrical connection between each circuit module.
When heat-radiating substrate is when using aluminum nitride ceramic substrate to realize, aluminum nitride ceramic substrate include insulating radiation layer and
The circuit-wiring layer 51 being formed on the insulating radiation layer.When using substrate made of metal material, substrate includes metal
Heat dissipating layer, the insulating layer 52 being laid on metallic radiating layer and the circuit-wiring layer 51 being formed on insulating layer 52.The present embodiment
In, installation base plate 50 is chosen as single side wiring plate.The insulating layer 52 is located in the circuit-wiring layer 51 and the heat dissipation base
Between plate.The insulating layer 52 for realizing the electrical isolation and electromagnetic shielding between circuit-wiring layer 51 and heat-radiating substrate, with
And external electromagnetic interference is reflected, so that external electromagnetic radiation jamming power switching tube be avoided to work normally, reduce surrounding
The interference effect of electromagnetic radiation in environment to the electronic component in highly integrated intelligent power module.
In some embodiments, on heat-radiating substrate can also according to the material of heat-radiating substrate be arranged insulating layer 52, such as
Heat-radiating substrate uses thermoplastic cement using the material of the conductive energy such as aluminium or copper material come when realizing, insulating layer 52 is optional
Or the materials such as thermosetting cement are made, to realize being fixedly connected between heat-radiating substrate and circuit-wiring layer 51 and insulate.Insulation
The high heat conductive insulating that layer 52 can be realized using epoxy resin, aluminium oxide, the one or more material mixing of high thermal conductivity packing material
Layer 52 is realized.
It is understood that due to the present embodiment intelligent power module no setting is required driving IC, in fabrication and installation substrate
50 and when circuit-wiring layer 51, without considering that power device to the electromagnetic interference of driving IC, therefore can reduce circuit-wiring layer
51 wiring difficulty.Also, driving IC is non-power device, and the heat generated drives again smaller than power device, no setting is required
When dynamic IC, without the heat-insulated setting considered between driving IC and power device.
Referring to Fig. 2 or Fig. 3, in one embodiment, the highly integrated intelligent power module further includes pin 60, the pin
60 are set on the circuit-wiring layer 51, and the pin 60 is opened by metal wire and circuit-wiring layer 51 with the PFC power
Module 30, blower inversion bridge circuit 20 and compressor inversion bridge circuit 10 is closed to be electrically connected.
In the present embodiment, pin 60 can be realized using gull wing type pin 60 or direct plugging-in pin 60, the present embodiment
Preferably direct plugging-in pin 60, pin 60 are welded on low heat conductive insulating substrate, on the corresponding installation position of circuit-wiring layer 510
Pad locations, and realized and be electrically connected by metal wire 60 and (PCC) power 10.
In another embodiment, one end of each pin 60 is fixed on the installation base plate 50, the other end of pin 60
Extend towards the direction far from the installation base plate 50, the plane where the extending direction of pin 60 and the installation base plate 50 is flat
Row.
It is understood that the present embodiment no setting is required driving IC, does not need to carry out the control exported to master controller 100
Signal carries out boosting processing, no setting is required boostrap circuit, filter capacitor etc., and the pin 60 of this implementation intelligent power module also adapts to
Property reduction, can solve the safety distance because between pin 60, and the problem for causing the area of installation base plate 50 larger can
Further to reduce the area of intelligent power module.
Referring to Fig. 2 or Fig. 3, in one embodiment, the highly integrated intelligent power module further includes opening the PFC power
The encapsulating housing 70 that pass module 30, installation base plate 50, blower inversion bridge circuit 20 and compressor inversion bridge circuit 10 are packaged.
In the present embodiment, encapsulating housing 70 can be made of materials such as epoxy resin, aluminium oxide, conductive filler materials,
Wherein, conductive filler material can be boron nitride, nitrogenize aluminium material, and the insulating properties of aluminium nitride and boron nitride is preferable, and thermal conductivity
Higher, heat resistance and heat conductivity are preferable, so that aluminium nitride and boron nitride have higher heat-transfer capability.In production encapsulating housing 70
When, the materials such as epoxy resin, aluminium oxide, boron nitride or aluminium nitride can be subjected to mixing, the package material that then will be mixed
Material is heated；After cooling, the encapsulating material is crushed, then is rolled 70 material of encapsulating housing with ingot grain moulding process
PFC power switching modules 30, three-phase bridge arm circuit and bridge arm driving circuit, are encapsulated in after encapsulating housing 70 by forming with being formed
It fills in shell 70.Or PFC power switching modules 30, three-phase bridge arm circuit and bridge arm driving circuit are encapsulated by Shooting Technique
In encapsulating housing 70.
In highly integrated intelligent power module, the encapsulating housing 70 can be covered at into the installation base plate 50 and the function
On rate component.So that the lower surface of aluminum substrate is exposed outside packaging part, and the heat dissipation of accelerating power element.If highly integrated intelligence function
Rate module is additionally provided with radiator 80 to radiate to power switch tube, then encapsulating housing 70 can be wrapped in the installation base plate
50 and the (PCC) power periphery so that power module and installation base plate 50 and (PCC) power are integrally formed and are arranged.
Referring to Fig. 3, in one embodiment, the highly integrated intelligent power module further includes radiator 80, the radiator
80 are set to the installation base plate 50 away from the PFC power switching modules 30, blower inversion bridge circuit 20 and compressor inversion
The side of bridge circuit 10.
In the present embodiment, radiator 80 can be made using preferable highly heat-conductive materials of heat dissipation effects such as aluminum, aluminium alloys,
So that the heat that the power switch tube in three-phase bridge arm circuit generates is conducted by installation base plate 50 to radiator 80, into one
Step increases the contact area of the heat that power switch tube generates and air, improves rate of heat dispation.The radiator 80 is also gratifying to be set
It is equipped with 80 ontology of radiator and multiple radiator shutters, multiple radiator shutters are arranged at intervals at the one of 80 ontology of radiator
Side.So set, the contact area of radiator 80 Yu air can be increased, namely when radiator 80 works, increase radiator
The contact area of heat and air on 80, to accelerate the rate of heat dispation of radiator 80.Radiator 80 can also be reduced simultaneously
Material avoids cooling fin because material application is excessive, causes cost excessively high.
Referring to figs. 1 to Fig. 3, in one embodiment, 10 structure of the blower inversion bridge circuit 20 and compressor inversion bridge circuit
At compressor horsepower module；
And/or the blower inversion bridge circuit 20 and compressor inversion bridge circuit 10 constitute power of fan module.
In the present embodiment, multiple power switch tubes are integrated in compressor horsepower module and power of fan module, it is multiple
Power switch tube composition driving inverter circuit, such as three-phase inversion bridge circuit, Huo Zheyou can be formed by six power switch tubes
Four power switch tubes form two-phase inverter bridge circuit.Wherein, each power switch tube can be using metal-oxide-semiconductor or IGBT come real
It is existing.Multiple power switch tubes form power inverting bridge circuit, and for driving the loaded work pieces such as blower, compressor, each power is opened
After pipe setting is closed on the corresponding installation position of circuit-wiring layer 5130, the conductive materials such as scolding tin and circuit-wiring layer 5130 can be passed through
It realizes electrical connection, and forms current loop.Each power switch tube can also be attached at circuit-wiring layer by the technique of upside-down mounting
On 5130 corresponding installation positions, and returned by forming electric current between circuit-wiring layer 5130 and metal wiring and each circuit element
Road.
Referring to figs. 1 to Fig. 3, it is also integrated with the failures such as overcurrent, over-voltage, overheat in one embodiment, in intelligent power module
Protect circuit (not shown go out).Fault secure circuit can be judged by the output electric current of detection blower fan blower whether overcurrent,
And overcurrent protection signal is fed back into master controller 100, so that master controller 100 is protected according to the overcurrent that fault secure circuit exports
Protect signal driving intelligent power module work.In above-described embodiment, fault secure circuit can also pass through detection DC bus electricity
Pressure realizes the mistake to intelligent power module by detecting the temperature of intelligent power module to realize the overvoltage protection to compressor
Thermal protection, overvoltage protection, overheat protector circuit can be using the electronics such as voltage sensor, temperature sensor, resistance, comparator
Element constitutes above-mentioned protection circuit.
The present invention also proposes that a kind of air conditioner, the air conditioner include highly integrated intelligent power module as described above.It should
The detailed construction of highly integrated intelligent power module can refer to above-described embodiment, and details are not described herein again；It is understood that due to
Above-mentioned highly integrated intelligent power module is used in the air condition of that present invention, therefore, the embodiment of the air condition of that present invention includes above-mentioned
Whole technical solutions of highly integrated intelligent power module whole embodiments, and technical effect achieved is also identical, herein
It repeats no more.
The foregoing is merely alternative embodiments of the invention, are not intended to limit the scope of the invention, all at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in scope of patent protection of the invention.
Claims (10)
1. a kind of highly integrated intelligent power module, which is characterized in that the highly integrated intelligent power module includes:
First control signal receiving end and second control signal receiving end receive the control signal of master controller output；
Compressor inversion bridge circuit, the controlled end of the compressor inversion bridge circuit and the first control signal receiving end connect
It connects, each phase inversion bridge arm circuit in the compressor inversion bridge circuit includes gallium nitride type HEMT pipe；
Blower inversion bridge circuit, the controlled end of the blower inversion bridge circuit are connect with the second control signal receiving end, institute
Stating each phase inversion bridge arm circuit in blower inversion bridge circuit includes gallium nitride type HEMT pipe.
2. highly integrated intelligent power module as described in claim 1, which is characterized in that the highly integrated intelligent power module is also
The third of control signal including PFC power switching modules and for receiving master controller output controls signal receiving end；
The PFC power switching modules include gallium nitride type HEMT pipe, the base stage and the third of the gallium nitride type HEMT pipe
Control signal receiving end connection.
3. highly integrated intelligent power module as claimed in claim 2, which is characterized in that the highly integrated intelligent power module is also
Including installation base plate, a side surface of the installation base plate is provided with multiple first installation positions, the second installation position and third installation
Position；
The PFC power switching modules are set on first installation position, and the blower inversion bridge circuit is set to described
On two installation positions, the compressor inversion bridge circuit is set on the third installation position.
4. highly integrated intelligent power module as claimed in claim 3, which is characterized in that a side surface of the installation base plate is also
It is provided with the 4th installation position；
The highly integrated intelligent power module further includes rectifier bridge, and the rectifier bridge is set to the 4th installation position.
5. highly integrated intelligent power module as claimed in claim 3, which is characterized in that the installation base plate includes:
Heat-radiating substrate；
Circuit-wiring layer is set to a side surface of the heat-radiating substrate, and the circuit-wiring layer is formed with installation position, for institute
State PFC power switching modules, the compressor inversion bridge circuit and blower inversion bridge circuit installation.
6. highly integrated intelligent power module as claimed in claim 5, which is characterized in that the highly integrated intelligent power module is also
Including insulating layer, the insulating layer is located between the circuit-wiring layer and the heat-radiating substrate.
7. highly integrated intelligent power module as claimed in claim 5, which is characterized in that the highly integrated intelligent power module is also
Including pin, the pin is set on the circuit-wiring layer, the pin by metal wire and circuit-wiring layer with it is described
PFC power switching modules, blower inversion bridge circuit and the electrical connection of compressor inversion bridge circuit.
8. highly integrated intelligent power module as claimed in claim 3, which is characterized in that the highly integrated intelligent power module is also
Including to the PFC power switching modules, the installation base plate, the blower inversion bridge circuit and compressor inverter bridge electricity
The encapsulating housing that road is packaged.
9. highly integrated intelligent power module as claimed in claim 3, which is characterized in that the highly integrated intelligent power module is also
Including radiator, the radiator is set to the installation base plate away from the PFC power switching modules, blower inversion bridge circuit
With the side of compressor inversion bridge circuit.
10. a kind of air conditioner, which is characterized in that including highly integrated intelligent power mould as claimed in any one of claims 1 to 9
Block.
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| CN201910468315.1A CN110085581B (en) | 2019-05-30 | 2019-05-30 | High-integration intelligent power module and air conditioner |
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| CN110085581B CN110085581B (en) | 2024-03-29 |
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| CN110085581B (en) | 2024-03-29 |
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