CN110085581A - Highly integrated intelligent power module and air conditioner - Google Patents

Abstract

The invention discloses a highly integrated intelligent power module and an air conditioner. The highly integrated intelligent power module includes: a first control signal receiving end and a second control signal receiving end for receiving a control signal output by a main controller; Bridge circuit, the controlled end of the compressor inverter bridge circuit is connected to the first control signal receiving end, each phase inverter bridge arm circuit in the compressor inverter bridge circuit includes a gallium nitride type HEMT tube; the fan inverter In the bridge circuit, the controlled end of the wind turbine inverter bridge circuit is connected to the second control signal receiving end, and each phase inverter bridge arm circuit in the wind turbine inverter bridge circuit includes a gallium nitride type HEMT tube. The invention simplifies the internal structure and circuit structure of the intelligent power module, is beneficial to the space utilization rate of the intelligent power module, reduces the volume of the intelligent power module, and reduces the occupied area of the intelligent power module on the electric control board.

Description

Highly integrated intelligent power module and air conditioner

technical field

The invention relates to the technical field of electronic circuits, in particular to a highly integrated intelligent power module and an air conditioner.

Background technique

Intelligent power modules are winning more and more markets with their advantages of high integration and high reliability. An intelligent power module is usually integrated with a driver IC and a power device. When working, the driver IC amplifies the logic signal output by the main controller and outputs it to the power device to drive the power device to work. However, integrating the driver IC into the smart power module requires increasing the size of the smart power module, which is not conducive to the development of the smart power module towards portability and miniaturization.

SUMMARY OF THE INVENTION

The main purpose of the present invention is to provide a highly integrated intelligent power module and an air conditioner, aiming at reducing the volume of the highly integrated intelligent power module and reducing the occupied area of the highly integrated intelligent power module on the electric control board.

In order to achieve the above purpose, the present invention proposes a highly integrated intelligent power module, the highly integrated intelligent power module includes:

The first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller;

Compressor inverter bridge circuit, the controlled end of the compressor inverter bridge circuit is connected to the first control signal receiving end, and each phase inverter bridge arm circuit in the compressor inverter bridge circuit includes Gallium nitride type HEMT tube;

Wind turbine inverter bridge circuit, the controlled end of the wind turbine inverter bridge circuit is connected to the second control signal receiving end, and each phase inverter bridge arm circuit in the wind turbine inverter bridge circuit includes gallium nitride type HEMT tube.

Optionally, the highly integrated intelligent power module further includes a PFC power switch module and a third control signal receiving end for receiving a control signal output by the main controller;

The PFC power switch module includes a gallium nitride type HEMT transistor, and a base of the gallium nitride type HEMT transistor is connected to the third control signal receiving end.

Optionally, the highly integrated intelligent power module further includes a mounting substrate, and one side surface of the mounting substrate is provided with a plurality of first mounting positions, second mounting positions and third mounting positions;

The PFC power switch module is set on the first installation position, the fan inverter bridge circuit is set on the second installation position, and the compressor inverter bridge circuit is set on the third installation position .

Optionally, a fourth installation position is further provided on one side surface of the installation substrate;

The highly integrated intelligent power module further includes a rectifier bridge, and the rectifier bridge is arranged at the fourth installation position.

Optionally, the mounting substrate includes:

Heat dissipation substrate;

The circuit wiring layer is arranged on one side surface of the heat dissipation substrate, and the circuit wiring layer is formed with installation positions for the PFC power switch module, the compressor inverter bridge circuit and the fan inverter bridge circuit Install.

Optionally, the highly integrated intelligent power module further includes an insulating layer, and the insulating layer is interposed between the circuit wiring layer and the heat dissipation substrate.

Optionally, the highly integrated intelligent power module further includes pins, the pins are arranged on the circuit wiring layer, and the pins are connected to the PFC power switch module and the fan inverter through the metal wire and the circuit wiring layer. The variable bridge circuit is electrically connected with the compressor inverter bridge circuit.

Optionally, the highly integrated intelligent power module further includes an encapsulation case encapsulating the PFC power switch module, the mounting substrate, the wind turbine inverter bridge circuit, and the compressor inverter bridge circuit.

Optionally, the highly integrated intelligent power module further includes a radiator, and the radiator is arranged on a side of the mounting substrate away from the PFC power switch module, the fan inverter bridge circuit, and the compressor inverter bridge circuit.

The present invention also proposes an air conditioner, including the above-mentioned highly integrated intelligent power module.

The invention integrates the fan inverter bridge circuit and the compressor inverter bridge circuit into the same package to form a highly integrated intelligent power module, and each phase of the bridge arm drive circuit in the fan inverter bridge circuit and the compressor inverter bridge circuit They are all realized by GaN-type HEMT tubes. GaN-type HEMT tubes are directly controlled by the main controller, and there is no need to set up a driver IC to amplify or logically convert the control signal of the main controller, which is beneficial to improve the wind turbine inverter. Response speed of variable bridge circuit and compressor inverter bridge circuit. And there is no need to set a driver IC, so the internal structure and circuit structure of the bridge arm drive circuit can be simplified, thereby reducing the volume and design difficulty of the highly integrated intelligent power module, and reducing the arrangement and wiring of various devices in the highly integrated intelligent power module The difficulty is beneficial to the space utilization of the highly integrated intelligent power module, as well as reducing the volume of the highly integrated intelligent power module and reducing the occupied area of the highly integrated intelligent power module on the electric control board.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained according to the structures shown in these drawings without creative effort.

FIG. 1 is a schematic diagram of a circuit structure of an embodiment of an intelligent power module of the present invention;

Fig. 2 is a schematic structural diagram of an embodiment of an intelligent power module of the present invention;

Fig. 3 is a schematic structural diagram of another embodiment of the intelligent power module of the present invention.

Explanation of reference numbers:

label name label name 100 main controller 50 Install the substrate 200 Intelligent Power Module 41 circuit wiring layer 10 Compressor inverter bridge circuit 42 Insulation 20 Fan inverter bridge circuit 60 pin 30 PFC power switch module 70 Encapsulation case 40 rectifier bridge 80 heat sink

The realization of the purpose of the present invention, functional characteristics and advantages will be further described in conjunction with the embodiments and with reference to the accompanying drawings.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

The invention proposes a highly integrated intelligent power module.

The intelligent power module, that is, IPM (Intelligent Power Module), is suitable for frequency converters for driving motors and various inverter power supplies to realize functions such as frequency conversion speed regulation, metallurgical machinery, electric traction, and servo drive. It is especially suitable for driving the motors of compressors such as air conditioners and refrigerators. When applied to inverter air conditioners, since the algorithm of the inverter drive is basically solidified in most cases, in order to save volume, improve anti-interference ability, and reduce the design workload of the peripheral electronic control board, the power device will be integrated into a circuit board. Intelligent power modules are formed. Compared with traditional discrete solutions, intelligent power modules win an increasing market due to their advantages of high integration and high reliability. When the power module is working, because the power devices are mostly implemented by IGNT and MOS tubes, the driving voltage is generally 12V or 15V, so there is usually a bridge arm drive circuit connected in series between the main controller and the power module to drive the power The device works. In some highly integrated smart power modules, power devices or diodes of the PFC circuit are usually integrated into the smart power module.

However, in an intelligent power module integrated with a PFC power device, the function of driving the PFC power device is usually integrated into the bridge arm drive circuit, such as the HVIC chip, so the HVIC chip must simultaneously drive the inverter bridge circuit and the PFC power The driving signal of the switch module makes the internal hardware circuit structure and software algorithm program of the HVIC chip more complicated. In addition, processing the received control signal through the HVIC to boost the voltage will increase the response time of the control signal and reduce the response speed of each switching tube. In addition, the volume of the HVIC chip also needs to be increased, which is not conducive to the arrangement and wiring of various devices in the intelligent power module, and the space utilization rate is low, which makes the volume of the intelligent power module too large, and it is easy to increase the size of the intelligent power module in the electronic control system. The footprint on the board.

In order to solve the above problems, referring to Fig. 1, in an embodiment of the present invention, the highly integrated intelligent power module includes:

The first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller 100;

Compressor inverter bridge circuit 10, the controlled end of the compressor inverter bridge circuit 10 is connected to the first control signal receiving end, each phase inverter bridge arm in the compressor inverter bridge circuit 10 The circuits all include gallium nitride (GaN) type HEMT tube (High electron mobility transistor, high electron mobility transistor), that is, GaN HEMT;

The fan inverter bridge circuit 20, the controlled end of the fan inverter bridge circuit 20 is connected to the second control signal receiving end, and each phase inverter bridge arm circuit in the fan inverter bridge circuit 20 includes GaN type HEMT tube.

In this embodiment, the number of first control signal receiving ends is six, which are UHIN, VHIN, WHIN, ULIN, VLIN, and WLIN; the first control signal receiving ends UHIN, VHIN, WHIN, ULIN, VLIN, and WLIN respectively receive The logic input signal output by the first control terminal of the main controller 100, that is, the control signal, drives the fan to work; the number of the second control signal receiving terminal is also six, respectively FUHIN, FVHIN, FWHIN, FULIN, FVLIN, FWLIN The second control signal receiving terminals FUHIN, FVHIN, FWHIN, FULIN, FVLIN, and FWLIN respectively receive the logic input signal of the second control output of the main controller 100, that is, the control signal, to drive the compressor to work. In some embodiments, the intelligent power module further includes a PFC control signal input terminal PFCOUT.

Each phase of the bridge arm circuit in the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10, that is, the bridge arm switch tube is realized by a gallium nitride type HEMT tube. Gallium transistors, especially GaN HEMTs, have low terminal capacitance and no reverse recovery losses caused by body diodes, which can reduce switching losses. In addition, the switching speed of GaN transistors is faster than that of silicon-based switching tubes, so the overall switching performance is better than that of silicon-based switching tubes, and higher switching frequencies can be achieved, thereby improving switching losses while maintaining reasonable switching losses. power density and transient performance. Since the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 use GaN HEMTs as switching components, GaN HEMTs have two-dimensional electron gas characteristics, GaN HEMTs do not need to be connected in parallel with FRDs, and the gate charge of GaN HEMTs is much less than that of IGBTs. There is no gate or connection resistor for protection. In the compressor inverter bridge circuit 10, the grid of the U-phase upper bridge arm HEMT tube 101 is connected to the first control signal receiving end UHIN; the grid of the V-phase upper bridge arm HEMT tube 102 is connected to the first control signal receiving end VHIN ; The grid of the W-phase upper bridge arm HEMT tube 103 and the first control signal receiving terminal WHIN. The drain of the U-phase upper bridge arm HEMT tube 101, the drain of the V-phase upper bridge arm HEMT tube 102, and the drain of the W-phase upper bridge arm HEMT tube 103 are connected, and serve as the high voltage input terminal of the intelligent power module 200 P, P are generally connected to 300V. In the fan inverter bridge circuit 20, the grid of the U-phase lower bridge arm HEMT tube 104 is connected to the first control signal receiving terminal ULIN; the grid of the V-phase lower bridge arm HEMT tube 105 is connected to the second control signal receiving terminal VLIN; The gate of the W-phase lower bridge arm HEMT transistor 106 is connected to the second control signal receiving end WLIN end. The source of the HEMT tube 104 serves as the U-phase low-voltage reference terminal UN of the intelligent power module 200; the source of the HEMT tube 105 serves as the V-phase low-voltage reference terminal VN of the intelligent power module 200; the The emitter of the HEMT tube 106 serves as the W-phase low voltage reference terminal WN of the intelligent power module 200 . The common end of the U-phase upper bridge arm HEMT tube 101 and the U-phase lower bridge arm HEMT tube 104 is the output end of the U-phase high voltage area, and the common end of the V-phase upper bridge arm HEMT tube 102 and the V-phase lower bridge arm HEMT tube 105 is The output end of the V-phase high-voltage area, the common end of the W-phase upper bridge arm HEMT tube 103 and the V-phase lower bridge arm HEMT tube 106 is the output end of the V-phase high-voltage area. An external capacitor C10 is connected between the positive terminal UVB of the power supply in the U-phase high-voltage zone and the negative terminal UVS of the power supply in the U-phase high-voltage zone of the compressor inverter bridge circuit 10; the positive terminal VVB of the power supply in the V-phase high-voltage zone and the negative terminal of the power supply in the V-phase high-voltage zone External capacitor C11 is connected to VVS; external capacitor C12 is connected between the positive terminal WVB of the power supply in the W-phase high-voltage area and the negative terminal WVS of the power supply in the W-phase high-voltage area.

In the fan inverter bridge circuit 20, the grid of the U-phase upper bridge arm HEMT tube 201 is connected to the second control signal receiving end FUHIN; the grid of the V-phase upper bridge arm HEMT tube 202 is connected to the second control signal receiving end FVHIN; The gate of the W-phase upper bridge arm HEMT transistor 203 is connected to the second control signal receiving end FWHIN. The drain of the U-phase upper bridge arm HEMT tube 201, the drain of the V-phase upper bridge arm HEMT tube 202, and the drain of the W-phase upper bridge arm HEMT tube 203 are connected, and serve as the high voltage input terminal of the intelligent power module 200 P, P are generally connected to 300V. In the fan inverter bridge circuit 20, the grid of the U-phase lower bridge arm HEMT tube 204 is connected to the first control signal receiving terminal ULIN; the grid of the V-phase lower bridge arm HEMT tube 205 is connected to the second control signal receiving terminal VLIN; The gate of the W-phase lower bridge arm HEMT transistor 206 is connected to the second control signal receiving end WLIN end. The source of the HEMT tube 204 serves as the U-phase low-voltage reference terminal FUN of the intelligent power module 200; the source of the HEMT tube 205 serves as the V-phase low-voltage reference terminal FVN of the intelligent power module 200; the The emitter of the HEMT tube 206 serves as the W-phase low voltage reference terminal FWN of the intelligent power module 200 . The common end of the U-phase upper bridge arm HEMT tube 201 and the U-phase lower bridge arm HEMT tube 204 is the output end UV of the U-phase high voltage area, and the common end of the V-phase upper bridge arm HEMT tube 202 and the V-phase lower bridge arm HEMT tube 205 is the output end of the V-phase high-voltage area, and the common end of the W-phase upper bridge arm HEMT tube 203 and the V-phase lower bridge arm HEMT tube 206 is the output end of the V-phase high-voltage area. An external capacitor C13 is connected between the positive terminal FUVB of the power supply in the U-phase high-voltage zone and the negative terminal FUVS of the power supply in the U-phase high-voltage zone of the fan inverter bridge circuit 20; the positive terminal FVVB of the power supply in the V-phase high-voltage zone and the negative terminal FVVS of the power supply in the V-phase high-voltage zone External capacitor C14; external capacitor C15 between the positive terminal FWVB of the power supply in the W-phase high-voltage area and the negative terminal FWVS of the power supply in the W-phase high-voltage area.

In this embodiment, each phase of the bridge arm circuit in the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10, that is, the bridge arm switch tube is realized by a gallium nitride type HEMT tube. In this case, gallium nitride (GaN) transistors, especially GaN HEMTs (High Electron Mobility Transistors), have low terminal capacitance and no reverse recovery loss caused by body diodes, which can reduce switching losses. In addition, the switching speed of gallium nitride (GaN) transistors is faster than that of silicon-based switching tubes, so the overall switching performance is better than silicon-based switching tubes, and higher switching frequencies can be achieved, thereby maintaining reasonable switching losses. At the same time, power density and transient performance are improved. Since the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 use GaN HEMTs as switching components, GaN HEMTs have two-dimensional electron gas characteristics, GaN HEMTs do not need to be connected in parallel with FRDs, and the gate charge of GaN HEMTs is much less than that of IGBTs. There is no gate or connection resistor for protection. Moreover, the driving voltage of the GaN HEMT is relatively small, and the control signal of the main controller 100 can be directly used as the driving of the GaN HMET, that is, the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 can be directly controlled by the main controller 100, There is no need to set up a bridge arm drive circuit, such as an HVIC chip.

The main controller 100 is an MCU, which is integrated with a logic controller, memory, data processor, etc., as well as software programs and/or modules stored on the memory and operable on the data processor. Run or execute the software programs and/or modules stored in the memory, and call the data stored in the memory, output corresponding control signals to the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10, so that the fan inverter bridge The gallium nitride type HEMT tube in the circuit 20 and the compressor inverter bridge circuit 10 is turned on/off according to the received control signal to drive loads such as fans, compressors and motors.

It can be understood that the driving voltage of the GaN HEMT is small, and the control signal of the main controller 100 can be directly used as the driving of the GaN HMET, that is, the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 are directly controlled by The main controller 100 does not need to set the bridge arm drive circuit, such as the HVIC chip, which can shorten the line distance between the bridge arm circuit and the main controller 100, and then can improve the control of the output of each GaN HEMT in the bridge arm circuit to the main controller 100 The response speed of the signal and the shortening of the line can also reduce the influence of the interference signal on the line on the operation of the bridge arm circuit.

The main controller 100 of this embodiment is independent from the intelligent power module 200 . In actual application, the main controller 100 and the intelligent power module 200 are arranged on an electric control board, and are electrically connected through circuit wiring or wires. Of course, in other embodiments, the main controller 100 can be integrated into the intelligent power module 200 to improve the integration degree of the intelligent power module. Each single bare chip in the three-phase upper bridge arm circuit 10 and the three-phase lower bridge arm circuit 20 can be integrated into an independent chip, and then packaged twice, and then integrated to obtain a highly integrated intelligent power module .

The present invention forms a highly integrated intelligent power module by integrating the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 in the same package, and each phase of the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 The driving circuits of the bridge arms are implemented by GaN-type HEMT tubes, and the GaN-type HEMT tubes are directly controlled by the main controller 100, and there is no need to set up a driver IC to amplify or logic convert the control signals of the main controller 100. , which is beneficial to improve the response speed of the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 . And there is no need to set a driver IC, so the internal structure and circuit structure of the bridge arm drive circuit can be simplified, thereby reducing the volume and design difficulty of the highly integrated intelligent power module, and reducing the arrangement and wiring of various devices in the highly integrated intelligent power module The difficulty is beneficial to the space utilization of the highly integrated intelligent power module, as well as reducing the volume of the highly integrated intelligent power module and reducing the occupied area of the highly integrated intelligent power module on the electric control board.

Referring to FIG. 1 , in one embodiment, the highly integrated intelligent power module further includes a PFC power switch module 30 and a third control signal receiving end for receiving a control signal output by the main controller, and the PFC power switch module 30 It includes a gallium nitride type HEMT tube, the base of the gallium nitride type HEMT tube is connected to the third control signal receiving end.

In this embodiment, in the PFC power switch module 30 , only GaN-type HEMT tubes may be integrated in the smart power module, or PFC circuits composed of diodes, inductors and other components may be integrated in the smart power module. The PFC circuit may be a step-up PFC circuit, a step-down PFC circuit, or a step-down PFC circuit. The PFC circuit adjusts the power factor of the direct current, and the adjusted direct current is output to the power input end of the inverter bridge circuit, so that each power module drives a corresponding load to work. The adjusted direct current can also generate the operating voltage of the control chip such as 5V to provide the operating voltage for the main controller 100 and other circuit modules. Since the PFC power switch module 30 uses GaN HEMT tube 301 as a switching component, GaN HEMT has two-dimensional electron gas characteristics, GaN HEMT does not need to connect FRD in parallel, and the gate charge of GaN HEMT is much less than that of IGBT, so there is no gate or connection resistor for protection . The driving voltage of the GaN HEMT is small, and the control signal of the main controller 100 can be directly used as the driving of the GaN HMET, that is, the PFC power switch module 30 can be directly controlled by the main controller 100 without setting the PFC power switch module 30. Drive circuit. Such setting can shorten the line distance between the PFC power switch module 30 and the main controller 100, thereby improving the response speed of the GaN HEMT tube 301 of the PFC power switch module 30 to the control signal output by the main controller 100, and shortening the line, It can also reduce the influence of the interference signal on the line on the operation of the GaN HEMT of the PFC power switch module 30 . Wherein, the PFC power switch module 30 uses the source PFC and the drain -VP of the GaN HEMT tube 301 to access the PFC inductor.

It should be noted that the switching frequency of the PFC power switch module 30 is much higher than the switching frequency of the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10. For example, in practical applications, the switching frequency of the PFC power switch module 30 is The inverter bridge circuit 20 and the compressor inverter bridge circuit 10 have twice the switching frequency of each switching tube. If the driving signal of the PFC power switch module 30 is integrated in the drive chip, the PFC power switch module 30 can easily give the fan inverter bridge circuit 20 and compressor inverter bridge circuit 10 bring serious electromagnetic interference, and affect the normal work of fan inverter bridge circuit 20 and compressor inverter bridge circuit 10, the PFC power switch module 30 of the present embodiment, fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 are directly controlled by the main controller 100, which can also reduce the interference of the PFC power switch module 30 on the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10.

Referring to FIG. 1, in one embodiment, a fourth installation position is provided on one side surface of the installation substrate 50;

The highly integrated intelligent power module further includes a rectifier bridge 40, and the rectifier bridge 40 is arranged at the fourth installation position.

Specifically, the bridge rectifier 40 is disposed on the installation position of the circuit wiring layer 51 . The highly integrated intelligent power module further includes a rectifier bridge 40, and the rectifier bridge 40 is arranged on the fourth installation position.

In this embodiment, the rectifier bridge 40 can be realized by combining four patch diodes, and the four patch diodes are electrically connected through the circuit wiring layer 51 and metal leads, and the rectifier bridge 40 composed of four patch diodes will The alternating current is converted into direct current and then output to the power switch tube to supply power for the power switch tube.

Referring to Fig. 2 or Fig. 3, in one embodiment, the highly integrated intelligent power module further includes a mounting substrate 50, the highly integrated intelligent power module further includes a mounting substrate 50, and one side surface of the mounting substrate 50 is provided with A plurality of first installation positions, second installation positions and third installation positions;

The PFC power switch module 30 is set on the first installation position, the fan inverter bridge circuit 20 is set on the second installation position, and the compressor inverter bridge circuit 10 is set on the third installation position. on the installation position.

In the above embodiments, the mounting substrate 10 includes: a heat dissipation substrate (not shown in the figure);

The circuit wiring layer 51 is arranged on one side surface of the heat dissipation substrate 51, and the circuit wiring layer 51 is formed with mounting positions for the PFC power switch module 30, the compressor inverter bridge circuit 10 and the Wind turbine inverter bridge circuit 20 is installed.

Further, the highly integrated intelligent power module further includes an insulating layer 52, and the insulating layer 52 is interposed between the circuit wiring layer 51 and the heat dissipation substrate.

In this embodiment, a circuit wiring layer 51 is provided on the mounting substrate 50, and the circuit wiring layer 51 forms corresponding circuits on the mounting substrate 50 and corresponding electronic components in the power supply switch tube according to the circuit design of the highly integrated intelligent power module. The installation position of the installation, that is, the pad. Specifically, after the insulating layer 52 is disposed on the mounting substrate 50 , copper foil is laid on the insulating layer 52 , and the copper foil is etched according to a preset circuit design, thereby forming the circuit wiring layer 51 . After the electronic components of each circuit module in the power switch tube are integrated on the circuit wiring layer 51 on the heat dissipation substrate, the electrical connection between each circuit module can also be realized through metal binding wires.

When the heat dissipation substrate is realized by using an aluminum nitride ceramic substrate, the aluminum nitride ceramic substrate includes an insulating heat dissipation layer and a circuit wiring layer 51 formed on the insulation heat dissipation layer. When a substrate made of metal is used, the substrate includes a metal heat dissipation layer, an insulating layer 52 laid on the metal heat dissipation layer, and a circuit wiring layer 51 formed on the insulating layer 52 . In this embodiment, the mounting substrate 50 may be a single-sided wiring board. The insulating layer 52 is interposed between the circuit wiring layer 51 and the heat dissipation substrate. The insulating layer 52 is used to realize electrical isolation and electromagnetic shielding between the circuit wiring layer 51 and the heat dissipation substrate, and to reflect external electromagnetic interference, thereby preventing external electromagnetic radiation from interfering with the normal operation of the power switch tube and reducing electromagnetic radiation in the surrounding environment Interference effects on electronic components in highly integrated intelligent power modules.

In some embodiments, an insulating layer 52 can also be provided on the heat dissipation substrate according to the material of the heat dissipation substrate. Made of materials such as thermosetting glue to achieve fixed connection and insulation between the heat dissipation substrate and the circuit wiring layer 51 . The insulating layer 52 can be realized by using epoxy resin, aluminum oxide, high thermal conductivity filling material or a mixture of one or more materials to realize the high thermal conductivity insulating layer 52 .

It can be understood that since the intelligent power module of this embodiment does not need to be equipped with a driver IC, when manufacturing the mounting substrate 50 and the circuit wiring layer 51, it is not necessary to consider the electromagnetic interference of the power device to the driver IC, so the wiring of the circuit wiring layer 51 can be reduced. difficulty. Moreover, the driver IC is a non-power device, and the heat generated by it is smaller than that of a power device. When there is no need to install the driver IC, there is no need to consider the heat insulation between the driver IC and the power device.

Referring to FIG. 2 or FIG. 3, in one embodiment, the highly integrated intelligent power module further includes pins 60, the pins 60 are arranged on the circuit wiring layer 51, and the pins 60 are connected through metal wires and The circuit wiring layer 51 is electrically connected to the PFC power switch module 30 , the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 .

In this embodiment, the pin 60 can be implemented by using a gull-wing pin 60 or an in-line pin 60. In this embodiment, the in-line pin 60 is preferred, and the pin 60 is welded on a low thermal conductivity insulating substrate. The wiring layer 510 corresponds to the pad position on the mounting position, and is electrically connected to the power component 10 through the metal wire 60 .

In another embodiment, one end of each pin 60 is fixed on the mounting substrate 50, the other end of the pin 60 extends away from the mounting substrate 50, and the extending direction of the pin 60 is in line with the mounting substrate 50. 50 is parallel to the plane.

It can be understood that, in this embodiment, there is no need to install a driver IC, no need to boost the control signal output by the main controller 100, no need to set a bootstrap circuit, filter capacitor, etc., and the pin 60 of the intelligent power module in this embodiment is also The reduction of adaptability can solve the problem that the area of the mounting substrate 50 is larger due to the safety distance between the pins 60 , and can further reduce the area of the intelligent power module.

Referring to FIG. 2 or FIG. 3 , in one embodiment, the highly integrated intelligent power module further includes the PFC power switch module 30 , the mounting substrate 50 , the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 . Encapsulated encapsulation case 70 .

In this embodiment, the package housing 70 can be made of materials such as epoxy resin, aluminum oxide, and thermally conductive filling materials, wherein the thermally conductive filling material can be made of boron nitride, aluminum nitride, aluminum nitride and boron nitride. Good insulation, high thermal conductivity, good heat resistance and thermal conductivity, so that aluminum nitride and boron nitride have high heat transfer capabilities. When making the packaging shell 70, materials such as epoxy resin, alumina, boron nitride or aluminum nitride can be mixed, and then the mixed packaging material is heated; after cooling, the packaging material is pulverized, The material of the package case 70 is then rolled and formed by the ingot forming process to form the package case 70 and then the PFC power switch module 30 , the three-phase bridge arm circuit and the bridge arm drive circuit are packaged in the package case 70 . Alternatively, the PFC power switch module 30 , the three-phase bridge arm circuit and the bridge arm drive circuit are packaged in the packaging case 70 through an injection molding process.

In a highly integrated intelligent power module, the encapsulation case 70 may be covered on the mounting substrate 50 and the power components. The lower surface of the aluminum substrate is exposed outside the package, thereby accelerating the heat dissipation of the power element. If the highly integrated intelligent power module is also provided with a heat sink 80 to dissipate heat for the power switch tube, then the encapsulating case 70 can be wrapped around the outer periphery of the mounting substrate 50 and the power assembly, so that the power module and the mounting substrate 50 and The power components are integrally formed.

Referring to FIG. 3 , in one embodiment, the highly integrated intelligent power module further includes a radiator 80, and the radiator 80 is arranged on the mounting substrate 50 away from the PFC power switch module 30 and the fan inverter bridge circuit 20. And one side of compressor inverter bridge circuit 10.

In this embodiment, the heat sink 80 can be made of aluminum, aluminum alloy and other high thermal conductivity materials with good heat dissipation effect, so that the heat generated by the power switch tube in the three-phase bridge arm circuit is conducted to the heat sink through the mounting substrate 50 80, the contact area between the heat generated by the power switch tube and the air is further increased to improve the heat dissipation rate. The heat sink 80 is also intended to be provided with a body of the heat sink 80 and a plurality of heat dissipation fins, and the plurality of heat dissipation fins are arranged at intervals on one side of the body of the heat sink 80 . Such setting can increase the contact area between the radiator 80 and the air, that is, when the radiator 80 is working, the contact area between the heat on the radiator 80 and the air can be increased to speed up the heat dissipation rate of the radiator 80 . At the same time, the materials of the radiator 80 can be reduced, so as to avoid excessive cost of the radiator due to excessive application of materials.

1 to 3, in an embodiment, the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 constitute a compressor power module;

And/or, the fan inverter bridge circuit 20 and the compressor inverter bridge circuit 10 constitute a fan power module.

In this embodiment, multiple power switch tubes are integrated in the compressor power module and the fan power module, and the multiple power switch tubes form a driving inverter circuit. For example, a three-phase inverter bridge circuit can be composed of six power switch tubes. Or a two-phase inverter bridge circuit is composed of four power switch tubes. Wherein, each power switch tube may be realized by using a MOS tube or an IGBT. A plurality of power switch tubes form a power inverter bridge circuit, which is used to drive loads such as fans and compressors. After each power switch tube is installed on the corresponding installation position of the circuit wiring layer 5130, it can be connected to the circuit wiring layer through conductive materials such as solder. 5130 realizes electrical connection and forms a current loop. Each power switch tube can also be pasted on the corresponding mounting position of the circuit wiring layer 5130 by flip-chip technology, and a current loop is formed between the circuit wiring layer 5130 and the metal binding wire and each circuit element.

Referring to FIG. 1 to FIG. 3 , in an embodiment, the intelligent power module is also integrated with overcurrent, overvoltage, overheating and other fault protection circuits (not shown). The fault protection circuit can judge whether the fan is over-current by detecting the output current of the fan, and feed back the over-current protection signal to the main controller 100, so that the main controller 100 can drive the intelligent power module according to the over-current protection signal output by the fault protection circuit Work. In the above embodiment, the fault protection circuit can also realize the overvoltage protection of the compressor by detecting the voltage of the DC bus, and realize the overheat protection of the intelligent power module by detecting the temperature of the intelligent power module, the functions of overvoltage protection and overtemperature protection The circuit can use electronic components such as voltage sensors, temperature sensors, resistors, comparators, etc. to form the above protection circuit.

The present invention also proposes an air conditioner, which includes the above-mentioned highly integrated intelligent power module. The detailed structure of the highly integrated intelligent power module can refer to the above-mentioned embodiments, and will not be repeated here; it can be understood that since the above-mentioned highly integrated intelligent power module is used in the air conditioner of the present invention, the implementation of the air conditioner of the present The examples include all the technical solutions of all the embodiments of the above-mentioned highly integrated intelligent power module, and the achieved technical effects are also completely the same, and will not be repeated here.

The above descriptions are only optional embodiments of the present invention, and do not limit the patent scope of the present invention. Under the inventive concept of the present invention, the equivalent structural transformation made by using the description of the present invention and the contents of the accompanying drawings, or direct/indirect Application in other related technical fields is included in the patent protection scope of the present invention.

Claims (10)

1. A highly integrated intelligent power module, characterized in that the highly integrated intelligent power module comprises: The first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller; Compressor inverter bridge circuit, the controlled end of the compressor inverter bridge circuit is connected to the first control signal receiving end, and each phase inverter bridge arm circuit in the compressor inverter bridge circuit includes Gallium nitride type HEMT tube; Wind turbine inverter bridge circuit, the controlled end of the wind turbine inverter bridge circuit is connected to the second control signal receiving end, and each phase inverter bridge arm circuit in the wind turbine inverter bridge circuit includes gallium nitride type HEMT tube. 2. The highly integrated intelligent power module according to claim 1, characterized in that, the highly integrated intelligent power module further comprises a PFC power switch module and a third control signal receiving terminal for receiving the control signal output by the main controller ; The PFC power switch module includes a gallium nitride type HEMT transistor, and a base of the gallium nitride type HEMT transistor is connected to the third control signal receiving end. 3. The highly integrated intelligent power module according to claim 2, characterized in that, the highly integrated intelligent power module further comprises a mounting substrate, and one side surface of the mounting substrate is provided with a plurality of first mounting positions, second installation position and the third installation position; The PFC power switch module is set on the first installation position, the fan inverter bridge circuit is set on the second installation position, and the compressor inverter bridge circuit is set on the third installation position . 4. The highly integrated intelligent power module according to claim 3, characterized in that, one side surface of the mounting substrate is further provided with a fourth mounting position; The highly integrated intelligent power module further includes a rectifier bridge, and the rectifier bridge is arranged at the fourth installation position. 5. The highly integrated intelligent power module according to claim 3, wherein the mounting substrate comprises: Heat dissipation substrate; The circuit wiring layer is arranged on one side surface of the heat dissipation substrate, and the circuit wiring layer is formed with installation positions for the PFC power switch module, the compressor inverter bridge circuit and the fan inverter bridge circuit Install. 6. The highly integrated intelligent power module according to claim 5, wherein the highly integrated intelligent power module further comprises an insulating layer, and the insulating layer is interposed between the circuit wiring layer and the heat dissipation substrate . 7. The highly integrated intelligent power module according to claim 5, characterized in that, the highly integrated intelligent power module further comprises pins, the pins are arranged on the circuit wiring layer, and the pins pass through metal The wire and circuit wiring layer are electrically connected with the PFC power switch module, the fan inverter bridge circuit and the compressor inverter bridge circuit. 8. The highly integrated intelligent power module according to claim 3, characterized in that, the highly integrated intelligent power module also includes a power switch module for the PFC, the mounting substrate, the fan inverter bridge circuit and the The packaging casing for packaging the compressor inverter bridge circuit. 9. The highly integrated intelligent power module according to claim 3, characterized in that, the highly integrated intelligent power module further comprises a radiator, and the radiator is arranged on the mounting substrate away from the PFC power switch module, fan One side of the inverter bridge circuit and the compressor inverter bridge circuit. 10. An air conditioner, characterized by comprising the highly integrated intelligent power module according to any one of claims 1 to 9.