CN110071122A - 一种阵列基板及其制备方法、显示面板 - Google Patents
一种阵列基板及其制备方法、显示面板 Download PDFInfo
- Publication number
- CN110071122A CN110071122A CN201910311421.9A CN201910311421A CN110071122A CN 110071122 A CN110071122 A CN 110071122A CN 201910311421 A CN201910311421 A CN 201910311421A CN 110071122 A CN110071122 A CN 110071122A
- Authority
- CN
- China
- Prior art keywords
- ti3o5
- array substrate
- crystalline material
- active layer
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910009815 Ti3O5 Inorganic materials 0.000 claims abstract description 49
- 239000002178 crystalline material Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 241000931526 Acer campestre Species 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 230000035807 sensation Effects 0.000 abstract description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 64
- 238000000034 method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
本发明涉及一种阵列基板及其制备方法、显示面板，其中所述阵列基板包括衬底以及设置于所述衬底上的有源层，其中所述有源层采用的材料包括λ‑Ti3O5晶体材料。首先，本发明采用λ‑Ti3O5晶体材料替代Poly–Si材料制备阵列基板中的有源层，避免P‑Si材料成膜温度较高，易受可见光影响，产生光电流，影响TFT开关关态电流大小，从而影响画面质量等问题；更进一步的，本发明还通过干法刻蚀或者激光辐照的方式将有源层的两侧部的材料由λ‑Ti3O5晶体材料转换成β‑Ti3O5晶体材料，从而提升迁移率，降低光感电流，提高其电学性能。
Description
技术领域
本发明涉及显示技术领域，具体涉及一种阵列基板及其制备方法、显示面板。
背景技术
有机发光显示装置(英文全称：Organic Light-Emitting Diode,简称OLED)又称为有机电激光显示装置、有机发光半导体。OLED的基本结构是由一薄而透明具有半导体特性的铟锡氧化物(ITO)与电力之正极相连，再加上另一个金属阴极，包成如三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子(电子-空穴对)，而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置(英文全称：Thinfilm transistor-liquid crystal display，简称TFT-LCD)需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
目前OLED显示装置的阵列基板中的有源层通常采用Poly–Si制成。具体的，有源层的制备方法为PECVD方式沉积A-Si,然后通过ELA等方法使其晶体化，最后通过P+掺杂以达到其技术要求。由此可见Poly–Si的制作技术要求高、工序复杂、且P-Si成膜温度较高，易受可见光影响，产生光电流，影响TFT开关关态电流大小，从而影响画面质量。因此需要寻求一种新型的有源层已解决上述问题。
发明内容
本发明的一个目的是提供一种阵列基板及其制备方法、显示面板，其能够解决目前的阵列基板中Poly–Si材料的制作技术要求高、工序复杂、且P-Si材料成膜温度较高，易受可见光影响，产生光电流，影响TFT开关关态电流大小，从而影响画面质量等问题。
为了解决上述问题，本发明的一个实施方式提供了一种阵列基板，其中包括衬底以及设置于所述衬上的有源层，其中所述有源层采用的材料包括λ-Ti3O5晶体材料。
进一步的，其中所述有源层包括：主体部和两侧部。其中所述主体部采用的材料包括λ-Ti3O5晶体材料；所述两侧部采用的材料包括β-Ti3O5晶体材料。
本发明的另一个实施方式提供了一种制备本发明所涉及的阵列基板的制备方法，其中包括：
步骤S1，提供一衬底，在所述衬底形成一层λ-Ti3O5晶体材料；
步骤S2，对所述λ-Ti3O5晶体材料进行退火处理进而形成所述有源层。
进一步的，其中所述步骤S1中，通过蒸镀方式在所述衬底上形成一层λ-Ti3O5晶体材料。
进一步的，其中所述步骤S2中，所述退火包括激光退火、低温退火中的一种或多种。
进一步的，其中所述低温退火的温度范围为100-300℃。
进一步的，其中所述阵列基板的制备方法还包括：步骤S3，将步骤S2形成的有源层定义出主体部及两侧部，对两侧部进行激光辐照，将两侧部的材料由λ-Ti3O5晶体材料转换为β-Ti3O5晶体材料。
进一步的，其中所述激光辐照的激光波长范围为500-550nm。
进一步的，其中所述阵列基板的制备方法还包括：步骤S3，将步骤S2形成的有源层定义出主体部及两侧部，通过干法刻蚀对两侧部进行刻蚀去除所述λ-Ti3O5晶体材料，再通过蒸镀方式在所述两侧部的位置处蒸镀β-Ti3O5晶体材料。
本发明的另一个实施方式提供了一种显示面板，其中包括上述阵列基板。
本发明的优点是：本发明涉及一种阵列基板及其制备方法、显示面板，首先，本发明采用λ-Ti3O5晶体材料替代Poly–Si材料制备阵列基板中的有源层，避免P-Si材料成膜温度较高，易受可见光影响，产生光电流，影响TFT开关关态电流大小，从而影响画面质量等问题；更进一步的，本发明还通过干法刻蚀或者激光辐照的方式将有源层的两侧部的材料由λ-Ti3O5晶体材料转换成β-Ti3O5晶体材料，从而提升迁移率，降低光感电流，提高其电学性能。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明阵列基板的结构示意图。
图2是本发明阵列基板采用的λ-Ti3O5晶体材料的XRD图。
图3是本发明阵列基板采用的β-Ti3O5晶体材料的XRD图。
图4是本发明阵列基板的制备步骤图。
图中部件标识如下：
100、阵列基板 1、基板
2、第一缓冲层 3、第二缓冲层
4、有源层 5、第一栅极绝缘层
6、第一栅极层 7、第二栅极绝缘层
8、第二栅极层 9、第一层间绝缘层
10、第二层间绝缘层 11、钝化层
12、第一平坦层 13、第二平坦层
14、第一源漏极 15、第二源漏极
16、像素定义层 17、隔离柱
41、主体部 42、两侧部
具体实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
实施例1
如图1所示，本实施例提供了一种阵列基板100，所述阵列基板100包括：衬底以及设置于所述衬底上的有源层4，其中所述衬底包括：基板1、第一缓冲层2以及第二缓冲层3。其中所述阵列基板100还包括：第一栅极绝缘层5、第一栅极层6、第二栅极绝缘层7、第二栅极层8、第一层间绝缘层9、第二层间绝缘层10、钝化层11、第一平坦层12、第二平坦层13、像素定义层16以及隔离柱17。其中所述第二层间绝缘层10上还设有第一源漏极14，所述第一源漏极14连接至所述有源层4，所述第一平坦层12上设有第二源漏极15，所述第二源漏极15连接至所述第一源漏极14。
其中所述第一栅极绝缘层5主要是起绝缘作用，防止第一栅极层6与所述有源层4直接接触，防止产生短路现象。
其中所述第二栅极绝缘层7主要是起绝缘作用，防止第一栅极层6与所述第二栅极层8直接接触，防止产生短路现象。
其中所述第一层间绝缘层9与所述第二层间绝缘层10主要是防止第一源漏极14与所述第二栅极层8以及第一栅极层6之间产生短路现象。
其中所述钝化层11主要是为了防止水氧侵蚀，降低阵列基板100的老化程度，提高其使用寿命。
其中所述有源层4采用的材料包括λ-Ti3O5晶体材料。采用λ-Ti3O5晶体材料替代Poly–Si材料制备阵列基板中的有源层4，避免P-Si材料成膜温度较高，易受可见光影响，产生光电流，影响TFT开关关态电流大小，从而影响画面质量等问题。
本实施例中所述有源层4包括主体部41和两侧部42。其中所述主体部41采用的材料包括λ-Ti3O5晶体材料；所述两侧部42采用的材料包括β-Ti3O5晶体材料。
具体的，图2、3分别为λ-Ti3O5晶体材料和β-Ti3O5晶体材料的XRD图。其中将两侧部42采用的材料由λ-Ti3O5晶体材料转换成β-Ti3O5晶体材料，主要提高有源层4的迁移率，降低光感电流，提高其电学性能。
实施例2
如图4所示，本发明的另一个实施方式提供了一种制备实施例1所涉及的阵列基板100的制备方法，其中包括：
步骤S1，提供一衬底，在所述衬底上形成一层λ-Ti3O5晶体材料；
步骤S2，对所述λ-Ti3O5晶体材料进行退火处理进而形成所述有源层4。
步骤S3，将步骤S2形成的有源层4定义出主体部41及两侧部42，将两侧部42的材料由λ-Ti3O5晶体材料转换为β-Ti3O5晶体材料。
其中，步骤S1中，可以通过蒸镀方式在所述衬底上形成一层λ-Ti3O5晶体材料，步骤S2中，可以采用激光退火、低温退火中的一种或多种对所述λ-Ti3O5晶体材料进行退火处理进而形成所述有源层4。具体的，低温退火的温度范围为100-300℃。
其中步骤S3中，一方面，可以采用波长范围为500-550nm的激光对两侧部42进行激光辐照，从而将两侧部42的材料由λ-Ti3O5晶体材料转换为β-Ti3O5晶体材料，其中所述激光辐照的激光波长范围为500-550nm。另一方面，还可以通过干法刻蚀对两侧部42进行刻蚀去除所述λ-Ti3O5晶体材料，再通过蒸镀方式在所述两侧部42的位置处蒸镀β-Ti3O5晶体材料，最终将所述两侧部42的材料由λ-Ti3O5晶体材料转换为β-Ti3O5晶体材料。
本发明还提供了一种显示面板，其中包括上述阵列基板100，具体的所述显示面板可以是OLED显示面板。
以上对本发明所提供的阵列基板及其制备方法、显示面板进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种阵列基板，其特征在于，包括：
衬底；
有源层，所述有源层设置于所述衬底上；
其中所述有源层采用的材料包括λ-Ti3O5晶体材料。
2.根据权利要求1所述的阵列基板，其特征在于，所述有源层包括：
主体部，所述主体部采用的材料包括λ-Ti3O5晶体材料；
两侧部，所述两侧部采用的材料包括β-Ti3O5晶体材料。
3.一种制备权利要求1所述的阵列基板的制备方法，其特征在于，包括：
步骤S1，提供一衬底，在所述衬底上形成一层λ-Ti3O5晶体材料；
步骤S2，对所述λ-Ti3O5晶体材料进行退火处理进而形成所述有源层。
4.根据权利要求3所述的阵列基板的制备方法，其特征在于，所述步骤S1中，通过蒸镀方式在所述衬底上形成一层λ-Ti3O5晶体材料。
5.根据权利要求3所述的阵列基板的制备方法，其特征在于，所述步骤S2中，所述退火包括激光退火、低温退火中的一种或多种。
6.根据权利要求5所述的阵列基板的制备方法，其特征在于，所述低温退火的温度范围为100-300℃。
7.根据权利要求3所述的阵列基板的制备方法，其特征在于，还包括：
步骤S3，将步骤S2形成的有源层定义出主体部及两侧部，对两侧部进行激光辐照，将两侧部的材料由λ-Ti3O5晶体材料转换为β-Ti3O5晶体材料。
8.根据权利要求7所述的阵列基板的制备方法，其特征在于，所述激光辐照的激光波长范围为500-550nm。
9.根据权利要求3所述的阵列基板的制备方法，其特征在于，还包括：
步骤S3，将步骤S2形成的有源层定义出主体部及两侧部，通过干法刻蚀对两侧部进行刻蚀去除所述λ-Ti3O5晶体材料，再通过蒸镀方式在所述两侧部的位置处蒸镀β-Ti3O5晶体材料。
10.一种显示面板，其特征在于，包括权利要求1所述的阵列基板。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910311421.9A CN110071122B (zh) | 2019-04-18 | 2019-04-18 | 一种阵列基板及其制备方法、显示面板 |
| PCT/CN2019/084883 WO2020211118A1 (zh) | 2019-04-18 | 2019-04-29 | 一种阵列基板及其制备方法、显示面板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910311421.9A CN110071122B (zh) | 2019-04-18 | 2019-04-18 | 一种阵列基板及其制备方法、显示面板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110071122A true CN110071122A (zh) | 2019-07-30 |
| CN110071122B CN110071122B (zh) | 2021-01-15 |
Family
ID=67367949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910311421.9A Active CN110071122B (zh) | 2019-04-18 | 2019-04-18 | 一种阵列基板及其制备方法、显示面板 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110071122B (zh) |
| WO (1) | WO2020211118A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023033182A1 (ja) * | 2021-09-06 | 2023-03-09 | 国立大学法人東北大学 | λ－Ｔｉ３Ｏ５膜形成基板およびλ－Ｔｉ３Ｏ５膜形成基板の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104973622A (zh) * | 2015-02-12 | 2015-10-14 | 四川大学 | 一种光致相变存储粉体材料λ-Ti3O5的制备方法 |
| CN107272276A (zh) * | 2016-04-08 | 2017-10-20 | 三星显示有限公司 | 显示装置 |
| CN107305303A (zh) * | 2016-04-18 | 2017-10-31 | 三星显示有限公司 | 液晶显示器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5515281B2 (ja) * | 2008-12-03 | 2014-06-11 | ソニー株式会社 | 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法 |
| US20120161098A1 (en) * | 2009-08-20 | 2012-06-28 | Nec Corporation | Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element |
| JP5733736B2 (ja) * | 2010-05-21 | 2015-06-10 | 国立大学法人 東京大学 | 酸化チタン粒子の製造方法 |
| CN102709326B (zh) * | 2012-04-28 | 2018-04-17 | 北京京东方光电科技有限公司 | 薄膜晶体管及其制造方法、阵列基板和显示装置 |
-
2019
- 2019-04-18 CN CN201910311421.9A patent/CN110071122B/zh active Active
- 2019-04-29 WO PCT/CN2019/084883 patent/WO2020211118A1/zh active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104973622A (zh) * | 2015-02-12 | 2015-10-14 | 四川大学 | 一种光致相变存储粉体材料λ-Ti3O5的制备方法 |
| CN107272276A (zh) * | 2016-04-08 | 2017-10-20 | 三星显示有限公司 | 显示装置 |
| CN107305303A (zh) * | 2016-04-18 | 2017-10-31 | 三星显示有限公司 | 液晶显示器 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023033182A1 (ja) * | 2021-09-06 | 2023-03-09 | 国立大学法人東北大学 | λ－Ｔｉ３Ｏ５膜形成基板およびλ－Ｔｉ３Ｏ５膜形成基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020211118A1 (zh) | 2020-10-22 |
| CN110071122B (zh) | 2021-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110048005A (zh) | 一种oled显示器件及其制备方法 | |
| CN103107184B (zh) | 有机发光显示面板及其制造方法 | |
| CN102456712B (zh) | 制造柔性显示器的方法 | |
| CN101615624B (zh) | 发光显示面板及其制造方法 | |
| KR102068956B1 (ko) | 박막트랜지스터, 박막트랜지스터 어레이 기판 및 이의 제조방법 | |
| CN100470842C (zh) | 有源矩阵型有机电致发光显示装置及其制造方法 | |
| US9620578B2 (en) | Array substrate, manufacture method thereof, and display panel | |
| US10658446B2 (en) | Method for manufacturing OLED backplane comprising active layer formed of first, second, and third oxide semiconductor layers | |
| US7494396B2 (en) | Organic electroluminescent device including transparent conductive layer and fabricating method thereof | |
| CN102629621A (zh) | 一种电路、阵列基板及制作方法、显示器 | |
| WO2011104893A1 (ja) | 有機ｅｌディスプレイ及び有機ｅｌディスプレイの製造方法 | |
| TW200533234A (en) | Organic electro luminescence device and fabrication method thereof | |
| US10504731B2 (en) | TFT substrate and manufacturing method thereof | |
| CN104966718A (zh) | Amoled背板的制作方法及其结构 | |
| CN109755287A (zh) | 一种柔性oled器件及其制备方法 | |
| CN110265441A (zh) | 一种显示面板及其显示装置 | |
| TW200308178A (en) | Organic electroluminescent device | |
| US20230088235A1 (en) | Display panel and method for manufacturing same | |
| CN203674269U (zh) | 薄膜晶体管、阵列基板及有机发光显示面板 | |
| CN103489892A (zh) | 一种阵列基板及其制作方法和显示装置 | |
| CN113725234B (zh) | 像素驱动电路及其制备方法、阵列基板和显示装置 | |
| CN104393026A (zh) | Oled显示基板及其制作方法、显示装置 | |
| US8686443B2 (en) | Organic light-emitting display device | |
| CN110071122A (zh) | 一种阵列基板及其制备方法、显示面板 | |
| CN110349974A (zh) | 一种阵列基板及其制备方法、显示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |