CN110064839A - A kind of laser anneal device - Google Patents
A kind of laser anneal device Download PDFInfo
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- CN110064839A CN110064839A CN201910364335.4A CN201910364335A CN110064839A CN 110064839 A CN110064839 A CN 110064839A CN 201910364335 A CN201910364335 A CN 201910364335A CN 110064839 A CN110064839 A CN 110064839A
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- laser
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- microscope group
- light beam
- anneal device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D11/00—Process control or regulation for heat treatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Abstract
The embodiment of the invention discloses a kind of laser anneal devices, comprising: control module；Module occurs for laser beam, and laser beam occurs module and is electrically connected with control module, and the laser control signal for being exported according to control module generates first laser light beam；Laser beam adjusts module, and laser beam adjustment module is electrically connected with control module, and the movable agency parameter for being exported according to control module is adjusted the Distribution of laser intensity of first laser light beam to be converted to second laser light beam；Optical module, optical module are used to converge second laser light beam to form hot spot corresponding with laser control signal on the substrate being correspondingly arranged.In the embodiment of the present invention, no matter how the beam quality of laser output changes, and will not have an impact to first laser light beam, will not carry out uncertain influence to process bands；Without frequently adjusting the yield of laser, it ensure that laser yield maximally utilizes.
Description
Technical field
The present embodiments relate to laser technique more particularly to a kind of laser anneal devices.
Background technique
Annealing is primarily referred to as after material is exposed to the high temperature some time, the heat treatment system then slowly cooled down again
Journey.Traditional stove heating anneal still cannot thoroughly eliminate crystal defect even if annealing under up to 1100 degree.And laser moves back
It is fiery then can more thoroughly eliminate crystal defect.
Existing laser annealing techniques, when silicon wafer needs strong energy exposure, by the side for actively increasing laser light intensity
Formula generates small size hot spot to realize strong energy, when silicon wafer needs weak energy exposure, by actively weakening laser light intensity
Mode generates large scale hot spot to realize weak energy, and the size of the small size hot spot and large scale hot spot immobilizes.And swash
The power of the yield of light device and laser light intensity is related, and laser utilization rate is low when weak energy exposure, and current annealing way is led
Cause can not play the maximum yield of laser.
Summary of the invention
The embodiment of the present invention provides a kind of laser anneal device, can not play asking for the maximum yield of laser with solution
Topic.
The embodiment of the invention provides a kind of laser anneal devices, comprising: module and light occur for control module, laser beam
Learn module, which is characterized in that further include: laser beam adjusts module；
The laser beam occurs module and is electrically connected with the control module, swashs for what is exported according to the control module
Optical control signal generates first laser light beam；
Laser beam adjustment module is electrically connected with the control module, for according to the control module export can
Dynamic mechanism parameter is adjusted to be converted to second laser light beam the Distribution of laser intensity of the first laser light beam；
The optical module be used for the second laser light beam converged on the substrate being correspondingly arranged formed with
The corresponding hot spot of the laser control signal.
Further, the laser beam adjustment module includes: the first rotating mechanism and cylindrical micro-lens array microscope group；
First rotating mechanism is connect with the control module and the cylindrical micro-lens array microscope group respectively, is used for root
It rotates according to cylindrical micro-lens array microscope group described in the movable agency state modulator to adjust the cylindrical micro-lens array microscope group
Angle.
Further, the cylindrical micro-lens array microscope group includes: two cylindrical micro-lens arrays that plane is oppositely arranged.
Further, first rotating mechanism includes motor or high-precision motion component.
Further, the rotation angle of the cylindrical micro-lens array microscope group is less than or equal to 45 °.
Further, the laser beam adjusts module further include: cylinder microscope group and the second rotating mechanism, the cylinder
Microlens array microscope group and the cylinder microscope group are successively arranged along direction of beam propagation；
Second rotating mechanism is connect with the control module and the cylinder microscope group respectively, for according to described movable
Mechanism parameter controls the eyeglass interval of the cylinder microscope group.
Further, the cylinder microscope group includes: at least one convex lens and extremely along direction of beam propagation arrangement
Few concavees lens.
Further, second rotating mechanism includes motor or high-precision motion component.
Further, the eyeglass interval of the cylinder microscope group is less than or equal to 10 millimeters.
Further, it includes: the laser successively arranged along direction of beam propagation, light beam that module, which occurs, for the laser beam
Processing unit, optical splitter, laser angle adjustment structure and expand unit.
Further, the laser angle adjustment structure includes: the angle of reflection successively arranged along the direction of beam propagation
Degree adjusts unit, collimation unit and shutter control unit.
Further, the laser control signal includes laser power density and laser frequency.
Further, the optical module includes reflecting mirror and convergence microscope group.
Further, the length-width ratio of the hot spot is 30:1 or 15:1.
In the embodiment of the present invention, control module exports laser control signal so that laser beam occurs module generation first and swashs
Light light beam, obtains the laser beam of energy density needed for laser control signal, control module also export movable agency parameter so that
The Laser beam energy distribution of laser beam adjustment module adjustment first laser light beam is simultaneously converted to second laser light beam, to be set
Laser beam corresponding to size hot spot, optical module converge with the shape on the substrate being correspondingly arranged second laser light beam
At being sized hot spot.In the embodiment of the present invention, no matter how the beam quality of laser output changes, and will not swash to first
Light light beam has an impact, and will not carry out uncertain influence to process bands；Laser anneal device is needing to carry out difference to substrate
When the annealing of degree, without frequently adjusting the yield of laser, it ensure that laser yield maximally utilizes, it is ensured that laser
The technology stability of annealing device, and reduce influence of the maintenance maintenance to board hot spot；It is adjustable to also achieve laser facula dynamic.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to do one simply to introduce, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of schematic diagram of laser anneal device provided in an embodiment of the present invention；
Fig. 2 is the schematic diagram of the laser beam adjustment module of laser anneal device described in Fig. 1；
Fig. 3 is the hot spot pattern of the 3mm*0.1mm of laser anneal device described in Fig. 1；
Fig. 4 is the hot spot pattern of the 3mm*0.2mm of laser anneal device described in Fig. 1.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, hereinafter with reference to attached in the embodiment of the present invention
Figure, clearly and completely describes technical solution of the present invention by embodiment, it is clear that described embodiment is the present invention one
Section Example, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
Refering to what is shown in Fig. 1, being a kind of schematic diagram of laser anneal device provided in an embodiment of the present invention, laser annealing dress
It sets and may be directly applied to semiconductor surface annealing, also can be applied to the fields such as glass substrate, metal material surface heat treatment, especially
It is the profile that can adjust output facula according to actual needs, realizes that hot spot dynamic is adjustable.
Laser anneal device provided in this embodiment includes: control module 100, and module 200 and optics occur for laser beam
Module 400；Further include: laser beam adjusts module 300；Laser beam occurs module 200 and is electrically connected with control module 100, uses
First laser light beam is generated in the laser control signal exported according to control module 100；Laser beam adjusts module 300, laser
Light beam adjustment module 300 is electrically connected with control module 100, and the movable agency parameter for being exported according to control module 100 is to the
The Distribution of laser intensity of one laser beam is adjusted to be converted to second laser light beam；Optical module 400 is used to swash to second
Light light beam is converged to form hot spot corresponding with laser control signal on the substrate 500 being correspondingly arranged.
In the present embodiment, control module 100 exports laser control signal to control laser beam and the generation of module 200 institute occurs
The first laser light beam needed, also output movable agency parameter are to control laser beam adjustment 300 rotary motion of module to first
Laser beam carries out shaping and obtains second laser light beam, then carries out convergence to second laser light beam by optical module 400 and obtain
Required size hot spot.
Control module 100 exports different laser control signals, and the laser parameter for including in different laser control signals is different,
The movable agency parameter being accordingly calculated is also different, then final corresponding spot size is also different.Control module 100 exports
Movable agency parameter be laser control signal corresponding to movable agency parameter, specifically, in laser control signal comprising with
The corresponding laser energy density of spot size and laser Output optical power, comprising according to external input demand in movable agency parameter
Spot size and the motor-driven angle that is calculated of the parameters such as laser energy density and laser Output optical power.Optional laser energy
Density includes laser power density, and laser Output optical power includes laser frequency, therefore optional laser control signal includes laser
Power density and laser frequency.
Optional laser control signal is depth annealing regulation signal or shallow-layer annealing regulation signal.Such as silicon wafer of substrate 500, needs
When depth being wanted to anneal, it can realize that the depth of silicon wafer is annealed by improving laser energy density, what control module 100 exported at this time swashs
Optical control signal is depth annealing regulation signal, and the movable agency parameter that control module 100 exports is depth annealing regulation signal
Corresponding movable agency parameter, control module 100 is according to laser control signal and movable agency state modulator, so that laser moves back
Energy density needed for fiery device generates is sized hot spot and carries out depth annealing to substrate 500.Similarly, silicon wafer needs shallow-layer
When annealing, it can realize that the shallow-layer of silicon wafer is annealed by reducing laser energy density, the laser controlling that control module 100 exports at this time
Signal is shallow-layer annealing regulation signal, and control module 100 also to swash according to laser control signal and movable agency state modulator
Energy density needed for photo-annealing device generates is sized hot spot and carries out shallow-layer annealing to substrate 500.Specific, silicon wafer needs
When depth being wanted to anneal, the control of control device 100 enters narrow facular model, and swashing for silicon chip surface can be increased by being sized narrow hot spot
Optical energy density promotes annealing depth and activity ratio.When silicon wafer needs shallow-layer to anneal, the control of control device 100 enters wide hot spot
Mode, generation are sized wide hot spot and can reduce the laser energy density of silicon chip surface, energy density and annealing depth phase
Matching avoids excessively high energy density from causing thin silicon wafer broken.
It should be noted that beam quality changes after the laser long-term work of laser anneal device, the present embodiment
In to laser output light beam be adjusted with generate needed for energy density first laser light beam, the energy of first laser light beam
Metric density is corresponding with laser control signal, and no matter how the beam quality of laser output changes, and can be generated by adjusting
The first laser light beam of required energy density.Distribution of laser intensity, that is, laser energy density parameter directly affects spot size.Tool
Body point, the energy density of laser beam needed for control module 100 determines, the laser beam that can be generated to laser are adjusted
To obtain the first laser light beam of required energy density, although therefore in the present embodiment laser long-term work will lead to light beam matter
Amount variation, but not laser energy density is influenced, uncertain influence will not be carried out on process bands.Mould is adjusted by laser beam
First laser light beam can be adjusted to second laser light beam by block 300, and second laser light beam is corresponding with being sized for hot spot
Laser beam, i.e., energy density determine first laser light beam be conditioned Distribution of laser intensity, can be rear to be converted to
Continuous convergence forms the second laser light beam for being sized hot spot, converged convenient for second laser light beam by optical module 400 and
It is formed on substrate 500 and is sized hot spot, this is sized energy density phase of the energy density with first laser light beam of hot spot
It is corresponding, therefore laser beam adjustment module 300 is also laser shaping module, for laser beam carry out intensity distribution shaping with
It obtains being sized the corresponding laser beam of hot spot.It can be characterized by laser energy density in this Distribution of laser intensity.
In the present embodiment, the laser beam of the laser of laser anneal device exportable different frequency and energy can also begin
The laser beam of output fixed frequency and energy eventually, when needing to carry out different degrees of annealing to substrate 500, it is only necessary to according to
The Distribution of laser intensity of first laser light beam is adjusted to laser intensity point corresponding to setting anneal mode by laser control signal
Cloth can finally form hot spot corresponding with first laser light beam, and then the annealing of respective degrees is carried out to substrate 500.It is not necessarily to
Different degrees of annealing is realized by the way of adjusting laser light intensity power, and laser light intensity is related to laser yield,
There is no need to frequently adjust the yield of laser, it ensure that laser yield maximally utilizes, it is ensured that laser anneal device
Technology stability, and reduce influence of the maintenance maintenance to board hot spot.
In the present embodiment, control module exports laser control signal so that laser beam occurs module and generates first laser light
Beam, obtains the laser beam of energy density needed for laser control signal, and control module also exports movable agency parameter so that laser
The Distribution of laser intensity of first laser light beam is adjusted to be converted to second laser light beam by light beam adjustment module, to be set
Laser beam corresponding to scale cun hot spot, optical module converges second laser light beam can be in the substrate being correspondingly arranged
Upper formation is corresponding with laser control signal to be sized hot spot.In the present embodiment, no matter laser output beam quality such as
What changes, and will not have an impact to first laser light beam, will not carry out uncertain influence to process bands；Laser anneal device
When needing to carry out different degrees of annealing to substrate, without frequently adjusting the yield of laser, it ensure that laser yield most
Bigization utilizes, it is ensured that the technology stability of laser anneal device, and reduce influence of the maintenance maintenance to board hot spot；It is also real
It is adjustable spot size dynamic has been showed.
Illustratively, based on the above technical solution, it includes: to pass along light beam that module 200, which occurs, for optional laser beam
Broadcast the laser 201 successively arranged in direction, beam treatment unit 202, optical splitter 203 and expands laser angle adjustment structure 204
Unit 205.Optional laser angle adjustment structure 204 includes: to adjust unit along the reflection angle that direction of beam propagation is successively arranged
204a, collimation unit 204b and shutter control unit 204c.
In the present embodiment, laser 201 is used to generate a branch of or multi beam variable frequency variable energy polarized laser beam,
Beam treatment unit 202 carries out light intensity regulating to the initial laser light beam that laser 201 generates and is transmitted to optical splitter 203.Through
It crosses the laser beam after beam treatment unit 202 is adjusted and enters optical splitter 203, the major part of laser beam enters laser after light splitting
Angle adjustment mechanism 204, optional another fraction enter an energy-probe 206, and energy-probe 206 detects laser energy at this time
Amount, and detection result is input to control module 100, control module 100 adjusts initial laser light beam according to detection result
Section, so that laser energy is consistent.
The reflection angle of laser angle adjustment structure 204 adjusts unit 204a and by angular adjustment laser beam is reflected
It is transmitted to collimation unit 204b, laser beam is converted to directional light by collimation unit 204b, so that laser beam maximal efficiency
It is coupled into shutter control unit 204c, shutter control unit 204c controls the light-inletting quantity of parallel laser light beam.By laser angular
The parallel laser light beam that degree adjustment structure 204 is reconciled enters expand unit 205, and expand unit 205 is straight by parallel input light beam
Diameter is extended to biggish collimated output beam, realizes collimated light beam enlarged-diameter, carries out shaping to laser beam convenient for subsequent.
It should be noted that control module 100 is also electrically connected with shutter control unit 204c, for carrying out shutter control, realize to sharp
The control of light light beam light-inletting quantity.
Illustratively, based on the above technical solution, the optional laser beam adjustment module 300 with reference to shown in Fig. 2 is wrapped
It includes: the first rotating mechanism 301 and cylindrical micro-lens array microscope group 302；First rotating mechanism 301 respectively with control module 100 and
Cylindrical micro-lens array microscope group 302 connect, for according to movable agency state modulator cylindrical micro-lens array microscope group 302 rotate with
Adjust the angle of cylindrical micro-lens array microscope group 302.Optional cylindrical micro-lens array microscope group 302 includes: what plane was oppositely arranged
Two cylindrical micro-lens arrays.Optional first rotating mechanism 301 includes motor or high-precision motion component.
In the present embodiment, cylindrical micro-lens array microscope group 302 includes multiple cylindrical micro-lens arrays, specific optional including flat
Two identical cylindrical micro-lens arrays that face is oppositely arranged.First rotating mechanism 301 is control cylindrical micro-lens array microscope group
The set of 302 motor-driven mating rotating devices ensure that multiple cylindrical micro-lens arrays begin in cylindrical micro-lens array microscope group 302
Relative position is kept eventually and is rotated integrally, and multiple cylindrical microlenses in cylindrical micro-lens array microscope group 302 are required in rotary course
The relative position rotation error of array is less than 0.05 °.
In the present embodiment, movable agency parameter is parameter relevant to spot size, specifically, user inputs required hot spot
After size, the rotation angle of cylindrical micro-lens array microscope group is calculated according to the facula information that user inputs for control module 100,
It then include the rotation angle of cylindrical micro-lens array microscope group in movable agency parameter.First rotating mechanism 301 is according to movable agency
State modulator cylindrical micro-lens array microscope group 302 rotation with by the angular adjustment of cylindrical micro-lens array microscope group 302 be with it is movable
The angle information of the cylindrical micro-lens array microscope group carried in mechanism parameter is identical.
First rotating mechanism 301 is integrated with cylindrical micro-lens array microscope group 302, the rotation of the first rotating mechanism 301
And then cylindrical micro-lens array microscope group 302 is driven to rotate integrally, the variation of the angle of the first rotating mechanism 301 rotation can make cylinder
The angle of microlens array microscope group 302 changes.The rotation angle of first rotating mechanism 301 needs light according to actual needs
Spot length-width ratio is selected, and different angles can make laser facula generate the different M^2 factors in two different axial directions.
The opposite position of each cylindrical micro-lens array in cylindrical micro-lens array microscope group 302 is required in first rotating mechanism, 301 rotary course
Rotation error is set less than 0.05 °.
It should be noted that direction of beam propagation is optical axis direction, the present embodiment central column face microlens array microscope group 302
Two cylindrical micro-lens arrays that middle plane is oppositely arranged are arranged along optical axis direction.Optional cylindrical micro-lens array includes multiple
Mirror, under original state, wherein the extending direction and horizontal plane of lens, the arragement direction of multiple lens are parallel to the horizontal plane.
Also optional in other embodiments, under original state, the extending direction of lens is parallel to the horizontal plane in cylindrical micro-lens array, more
The arragement direction and horizontal plane of a lens.Refer to the postrotational angle of lens and initial lens angle in the angle of this lens
Angle.The rotation of lens refers to that the first rotating mechanism 301 control cylindrical micro-lens array microscope group 302 is revolved counterclockwise or clockwise
Turn.
The rotation angle of optional cylindrical micro-lens array microscope group 302 is less than or equal to 45 °.Those skilled in the art can manage
Solution, required size hot spot, the rotation angle of cylindrical micro-lens array microscope group are not limited within 45 ° in order to obtain.
Optionally, laser beam adjusts module 300 further include: cylinder microscope group 303 and the second rotating mechanism 304, cylinder
Microlens array microscope group 302 and cylinder microscope group 303 are successively arranged along direction of beam propagation；Second rotating mechanism 304 respectively with control
Molding block 100 and cylinder microscope group 303 connect, for the eyeglass interval according to movable agency state modulator cylinder microscope group 303.Cylinder
Microscope group 303 includes: at least one convex lens and at least one concave lens along direction of beam propagation arrangement.Optional second whirler
Structure 304 includes motor or high-precision motion component.
In the present embodiment, cylinder microscope group 303 includes the movable cylinder microscope group arranged along optical axis direction, specially along light
The convex lens and concavees lens of axis direction arrangement.During actual technological experiment, the rotation of the whole group of the first rotating mechanism 301 with
And the relative rotation in cylindrical micro-lens array microscope group 302 between each cylindrical micro-lens array will cause spot length and width
The variation in direction, causes multiplying power to lose, but the influence to spot length direction is smaller.Therefore need to change enlargement ratio to correct
Spot length or width, the working distance that can change cylinder microscope group 303 by the second rotating mechanism 304 herein change enlargement ratio and are
Focal length, realization is varifocal, and then changes spot length or width.
Movable agency parameter is parameter relevant to spot size, specifically, after user inputs required spot size, control
The lens spacing of cylinder microscope group is calculated according to the facula information that user inputs for module 100, then includes in movable agency parameter
The lens spacing of cylinder microscope group.Control module 100 is according to the facula information of external input demand, in conjunction with laser Output optical power,
Most matched hot spot length and width are calculated, the range of depth of focus compensation is calculated further according to the matched calculated result of M^2, pass through the second rotation
Mechanism 304 changes the working distance of cylinder microscope group 303, and compensation multiplying power as caused by Rotating cylindrical surface microlens array microscope group 302 is lost,
The working distance of specific cylinder microscope group 303 is related to focal length, and adjusting working distance is realized varifocal.Specifically, optional second rotation
Rotation mechanism includes motor or high-precision motion component, is connected in a certain range using motor or the realization of other high-precision motion components
The continuous eyeglass interval for changing cylinder microscope group 303, changes enlargement ratio.So realize in a certain range change hot spot length-width ratio and
Final technique depth of focus and uniformity are not influenced.The working distance of the cylinder microscope group 303 of second rotating mechanism 304 adjustment herein, is realized
Correction to the size of hot spot length direction or wide direction.
The eyeglass interval of optional cylinder microscope group 303 is less than or equal to 10 millimeters.Specifically, the second rotating mechanism 304 controls
The interval of the working distance of cylinder microscope group 303 is no more than 10 millimeters.
The optional length-width ratio for being sized hot spot is 30:1 or 15:1, then 3mm* can be generated in the laser anneal device
0.1mm and 3mm*0.2mm etc. different spot sizes.Fig. 3 is the hot spot pattern for the 3mm*0.1mm that actual exposure generates, wherein
Actual facula length is 3mm, and actual facula width is 0.095mm.Fig. 4 is the hot spot shape for the 3mm*0.2mm that actual exposure generates
Looks, wherein actual facula length is 3.1mm, and actual facula width is 0.21mm.Obviously, actual facula pattern and setting hot spot ruler
It is very little very close, it can regard as to form specified size hot spot.Switch to 3mm*0.2mm's from 3mm*0.1mm in laser path
In the process, hot spot length-width ratio is switched to 15:1 from 30:1, and the angle of corresponding same level optical axis has converted 1.90 °, due to rotation
Angular region is smaller, and the length-width ratio of light spot profile can be from 30:1 in the rotary course that can approximately think from 1.91 ° to 3.81 °
It changes to 15:1 is linear.
Illustratively, based on the above technical solution, optional optical module 400 includes reflecting mirror 401 and converging lenses
Group 402.Reflecting mirror 401 reflects second laser light beam, and the second laser light beam for converging 402 pairs of microscope group reflections converges
It is sized hot spot to be formed on substrate 500, being sized for the hot spot is corresponding with laser control signal.
Illustratively, based on the above technical solution, the control module 100 of optional laser anneal device includes outside
Input controller 101, exposure control unit 102, environment control unit 103 and laser controller 104.
External input controller 101 swashs for receiving externally input energy density and being controlled laser 201 with this and issued
Light light beam.Exposure control unit 102 is used to control the movable agency parameter in frequency, power and the optical path of laser 201, is also used to
Environment is monitored, relevant parameters are electrically waited, guarantees complete machine work in safe and reliable state.Environment control unit 103 respectively with swash
Light device 201 and laser controller 104 are electrically connected, working environment such as temperature parameter for detecting laser 201 etc., and will be visited
It surveys result and is back to laser controller 104.Laser controller 104 is according to environment control unit 103 and energy-probe 206
Output result control laser 201 work.
Illustratively, based on the above technical solution, optional further include: board 600.Substrate 500 is placed on board
On 600, board 600 is mobile to drive the movement of substrate 500 thereon, so that the laser facula of specified size carries out substrate 500
Annealing.
In conclusion laser anneal device provided in this embodiment increases the moving beams shaping list comprising Zoom structure
Member is that laser beam adjusts module, can switch spot size according to process requirements and complete annealing process, while according to setting
Power density, the spot size of switching illumination output guarantees the utilization rate as high as possible to light source.The present embodiment has as follows
The utility model has the advantages that the laser energy of output is controllable, it can be adapted to for different operating conditions, the technique for improving product adapts to model
It encloses, meets more customer demands；It can guarantee that whole output facula quality does not export matter after the long-term work of stimulated light device
The influence of amount, ensure that the technology stability of product lifecycle, and reduce influence of the maintenance maintenance to board hot spot；It is existing
In technology, different hot spot length-width ratios cause the optical constant into camera lens to change, and cause the depth of focus of single axial to reduce, and may
The variation of uniformity is caused in final image planes, compared with prior art, aspect ratio change bring physical optics is also avoided to imitate
It answers, guarantees the uniformity of laser facula under various sizes range, improve the focal depth range of entire laser anneal device, improve
Whole process uniformity avoids yield and promotes the decline of bring Technological adaptability.
It should be noted that anneal mode, hot spot length-width ratio numerical value are specific examples in the embodiment of the present invention, and unlimited
Due to this, the structure of laser anneal device, which is also only, to be briefly described, and wherein the specific structure of all parts repeats no more, any one
The component that its function can be achieved in kind each falls within protection scope of the present invention.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this
Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept
In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (14)
1. a kind of laser anneal device, comprising: module and optical module occur for control module, laser beam, which is characterized in that also
It include: laser beam adjustment module；
The laser beam occurs module and is electrically connected with the control module, the laser control for being exported according to the control module
Signal processed generates first laser light beam；
Laser beam adjustment module is electrically connected with the control module, for according to the control module export can motivation
Structure parameter is adjusted to be converted to second laser light beam the Distribution of laser intensity of the first laser light beam；
The optical module be used for the second laser light beam converged on the substrate being correspondingly arranged formed with it is described
The corresponding hot spot of laser control signal.
2. laser anneal device according to claim 1, which is characterized in that laser beam adjustment module includes: the
One rotating mechanism and cylindrical micro-lens array microscope group；
First rotating mechanism is connect with the control module and the cylindrical micro-lens array microscope group respectively, for according to institute
The rotation of cylindrical micro-lens array microscope group described in movable agency state modulator is stated to adjust the angle of the cylindrical micro-lens array microscope group
Degree.
3. laser anneal device according to claim 2, which is characterized in that the cylindrical micro-lens array microscope group includes:
Two cylindrical micro-lens arrays that plane is oppositely arranged.
4. laser anneal device according to claim 2, which is characterized in that first rotating mechanism includes motor or height
Precise movements component.
5. laser anneal device according to claim 2, which is characterized in that the rotation of the cylindrical micro-lens array microscope group
Angle is less than or equal to 45 °.
6. laser anneal device according to claim 2, which is characterized in that the laser beam adjusts module further include:
Cylinder microscope group and the second rotating mechanism, the cylindrical micro-lens array microscope group and the cylinder microscope group along direction of beam propagation according to
Secondary arrangement；
Second rotating mechanism is connect with the control module and the cylinder microscope group respectively, for according to the movable agency
The eyeglass interval of cylinder microscope group described in state modulator.
7. laser anneal device according to claim 6, which is characterized in that the cylinder microscope group includes: along the light beam
At least one convex lens and at least one concave lens of direction of propagation arrangement.
8. laser anneal device according to claim 6, which is characterized in that second rotating mechanism includes motor or height
Precise movements component.
9. laser anneal device according to claim 6, which is characterized in that the eyeglass interval of the cylinder microscope group be less than or
Equal to 10 millimeters.
10. laser anneal device according to claim 1, which is characterized in that it includes: edge that module, which occurs, for the laser beam
The laser that direction of beam propagation is successively arranged, beam treatment unit, optical splitter, laser angle adjustment structure and expand unit.
11. laser anneal device according to claim 10, which is characterized in that the laser angle adjustment structure includes:
The reflection angle successively arranged along the direction of beam propagation adjusts unit, collimation unit and shutter control unit.
12. laser anneal device according to claim 1, which is characterized in that the laser control signal includes laser function
Rate density and laser frequency.
13. laser anneal device according to claim 1, which is characterized in that the optical module includes reflecting mirror and remittance
Poly- microscope group.
14. laser anneal device according to claim 1, which is characterized in that the length-width ratio of the hot spot is 30:1 or 15:1.
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| CN201910364335.4A CN110064839B (en) | 2019-04-30 | 2019-04-30 | Laser annealing device |
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| CN201910364335.4A CN110064839B (en) | 2019-04-30 | 2019-04-30 | Laser annealing device |
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| CN110064839B CN110064839B (en) | 2020-03-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112718702A (en) * | 2020-12-30 | 2021-04-30 | 中国科学院微电子研究所 | Controllable microlens array cleaning device |
| CN112769025A (en) * | 2020-12-30 | 2021-05-07 | 中国科学院微电子研究所 | Optical shaping device and method |
| CN113943856A (en) * | 2021-09-07 | 2022-01-18 | 中国科学院宁波材料技术与工程研究所 | Intelligent laser shock peening system with adjustable light spot shape and energy |
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|---|---|
| CN110064839B (en) | 2020-03-17 |
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