CN107357034B - A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source - Google Patents
A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source Download PDFInfo
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- CN107357034B CN107357034B CN201710649227.2A CN201710649227A CN107357034B CN 107357034 B CN107357034 B CN 107357034B CN 201710649227 A CN201710649227 A CN 201710649227A CN 107357034 B CN107357034 B CN 107357034B
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- G02B21/00—Microscopes
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Abstract
A kind of light-induction dielectrophoresis device the invention discloses laser interference pattern light field as light source, interference figure light field is generated using laser interference system, by optical system, irradiate light-induction dielectrophoresis chip, change photosensitive layer resistance in chip, the non-uniform electric field changed with light field is generated in the solution layer of chip, to control the microcosmic particle movement in solution.The bigger light field pattern of the strong difference of bright half-light can be obtained using laser interference pattern light field as light source；Requirement to required optical system is lower, and optical system is simpler；The aberration that can reduce device generation is conducive to manipulate and observe particle movement.
Description
Technical field
The present invention relates to micro-nano control fields, in particular to light-induction dielectrophoresis field, are a kind of laser interference patterns
Change light-induction dielectrophoresis device of the light field as light source.
Background technique
Observation and manipulation for micro-nano size objects are the micro-nano science of research and the core technology for realizing minute manufacturing
One of.With the rapid development of physics, chemistry, biotechnology, detection and tracking to micro-nano particle, and further manipulation,
Increasingly by the concern of scientists.Traditional technological means is unable to satisfy current accurate, quick, efficient testing requirements, light
Induction dielectrophoresis technology comes into being.
Light-induction dielectrophoresis is a kind of manipulation technology for combining optical electrode with dielectrophoresis method.With optical electrode generation
It to design electrode and comes into operation, the required period is extremely short, avoids complexity for traditional physical electrode from operating function is determined
Electrode production process, improve particle manipulation flexibility, reduce electrode machining cost.It is virtual since dynamic optical can be generated
Electrode, therefore the manipulation more complicated to particle may be implemented.
The system structure of general light-induction dielectrophoresis device can be divided into 3 parts: 1) projected area according to function difference:
By projector and its computer of connection, lens group, reflecting mirror composition, the main generation for controlling optoelectronic pole pattern, projection, and control
Light field pattern is mobile.2) test section: being made of signal generator and its light-induction dielectrophoresis chip of connection, and signal generator connects
The upper layer and lower layer conductive layer for connecing chip provides alternating signal, and particle is manipulated in chip solution layer.3) it the area of observation coverage: is shown by optics
The computer composition of micro mirror, charge-coupled device (CCD) and its connection, optical microscopy and CCD are placed in above chip, will be in chip
The position of portion's particle and operating situation Real-time Feedback are to computer screen.
Existing light-induction dielectrophoresis device generally uses projector as light source, because of the optical system of projector itself
It is relatively simple, so have the disadvantage in that the strong difference of the bright half-light of the image 1) being projected out is smaller, the light-induction dielectrophoresis power of generation
It is small.2) inherently there is certain deviation in the image being projected out, and there are the angles of divergence to enlarged image, so corresponding optics
System is not easy to design and adjust.3) it is larger that aberration is generated after optical system, is unfavorable for manipulating and observing particle movement.
Summary of the invention
The invention solves technical problems are as follows: 1) the strong difference of the bright half-light of the image being projected out is smaller, and the photoinduction of generation is situated between
Electrophoretic force is small, 2) optical system is not easy to design and adjust, 3) that aberration is generated after optical system is larger.The present invention provides one
Light-induction dielectrophoresis device of the kind laser interference pattern light field as light source, using laser interference pattern light field as light
Source can obtain the bigger light field pattern of the strong difference of bright half-light；Requirement to required optical system is lower, and optical system is simpler
It is single；The aberration that can reduce device generation is conducive to manipulate and observe particle movement.
It is as follows that the present invention solves technical solution used by above-mentioned technical problem:
A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source, including laser interference system, light
System, light-induction dielectrophoresis chip, signal generator, microscopic system and ccd image sensor-based system, laser transmitting swash
Light generates interference figure after laser interference system, and interference figure is light and dark pattern, and the interference figure light field is as dress
Set light source used, the laser interference system is by a 1:2 beam splitting lens, a 1:1 beam splitting lens, two special lens,
Four total reflective mirrors composition, effect is laser is divided into three beams frequency identical, constant phase difference, the consistent light of direction of vibration, and is allowed to
It interferes, interference figure needed for generating, two special lens are respectively the first special lens and the second special lens, and four complete
Anti- mirror is respectively the first total reflective mirror, the second total reflective mirror, third total reflective mirror and the 4th total reflective mirror；Optical system by two positive lens and
One reflecting mirror composition, effect are convergence light intensity, and the bright rays width adjusting of interference figure light field is arrived and to manipulate particle straight
Diameter is close, and two positive lens are respectively the first positive lens and the second positive lens；Light-induction dielectrophoresis chip is divided into lower layer and upper layer,
Lower layer is followed successively by the first sheet glass, the first conductive layer, photosensitive layer from top to bottom, upper layer be followed successively by from top to bottom the second sheet glass,
Second conductive layer.
Further, the first conductive layer, the second conductive layer are indium oxide tin film, with a thickness of 100nm -140nm, photosensitive layer
For hydrogenated amorphous silicon film, with a thickness of 450nm -550nm.
The principle of the invention lies in:
The light-induction dielectrophoresis device of a kind of laser interference pattern as light source, comprising: laser interference system 1, optical system
System 2, light-induction dielectrophoresis chip 3, signal generator 4, microscopic system 5, ccd image sensor-based system 6.
Light-induction dielectrophoresis device of the laser interference pattern light field proposed according to embodiments of the present invention as light source be
Maximum difference and prioritization scheme of the invention with other same devices, light source used are that laser generates after interference system
Light and dark interference figure light field.Satisfactory interference figure in order to obtain devises laser interference system 1.
Laser interference system 1 is as shown in Fig. 2, laser interference system 1 used in the embodiment of the present invention is Three-beam Interfere
Single particle can be moved to specific position by the interference figure of system, generation, and the system is by a 1:2 beam splitting lens 21, and one
A 1:1 beam splitting lens, two special lens (the first special lens 24, the second special lens 28), (first is all-trans four total reflective mirrors
Mirror 22, the second total reflective mirror 25, third total reflective mirror 26, the 4th total reflective mirror 27) composition, the effect of lens is to be divided into light beam to send out
The three-beam of raw interference, the effect of total reflective mirror are the propagation paths for changing light beam.Change optical path difference by mobile total reflective mirror, from
And change interference figure.The interference figure of different pattern and size can be obtained by changing laser interference system.Pass through microbit
Moving platform can change position of the light field relative to light-induction dielectrophoresis chip.The laser interference system 1 of design makes three-beam exist
Start to occur to stablize interference along the direction of propagation of light at second special lens 28.
Corresponding optical system 2 is needed after designing interference system as shown in figure 3, to converge light intensity and adjustment interference pattern
The size of case.Bright pattern dimension in interference figure is close with manipulated particle size.Each lens used in optical system
A part of light will be absorbed, so the lens the few, the light intensity finally obtained is higher.Optical system used in the embodiment of the present invention
System is made of two positive lens (the first positive lens 31, the second positive lens 32) and a reflecting mirror 33, and the effect of positive lens is to converge
Optically focused is strong, and interference figure is adjusted the size to suitable manipulation and observation particle movement.The effect of reflecting mirror is to change interference
The propagation path of pattern is allowed to be irradiated to horizontal positioned 3 lower surface of light-induction dielectrophoresis chip.
Light-induction dielectrophoresis chip 3 as shown in figure 4, be divided into lower layer and upper layer, lower layer be followed successively by from top to bottom sheet glass 42,
First conductive layer 43, photosensitive layer 44, upper layer are followed successively by sheet glass 45, the second conductive layer 46 from top to bottom.Work as laser interference pattern
When change light field is irradiated to light-induction dielectrophoresis chip 3, the resistance of 44 corresponding position of photosensitive layer changes, to generate uneven
Electric field makes particle polarize, and generates displacement.
Microscopic system 5 is made of microscope and microscope illumination light source, and ccd image sensor-based system 6 is by CCD and computer
Composition, without particular/special requirement.
In addition, laser interference pattern light field according to the above embodiment of the present invention is filled as the light-induction dielectrophoresis of light source
Setting can also have the following additional technical features:
In an embodiment of the present invention, the laser is Nd:YAG (neodymium-doped yttrium-aluminum garnet) solid state laser, used
The a length of 532nm obtained by frequency multiplication of laser beam-wave.
Further, in an embodiment of the present invention, sheet glass is 3cm × 3cm × 0.07cm, conductive layer in the chip
Indium oxide tin film is with a thickness of 120nm, and photosensitive layer amorphous silicon hydride is with a thickness of 500nm.
Further, in an embodiment of the present invention, it selects and chip is sealed with a thickness of 50 μm of 3M narrow side double-sided adhesive
Dress.The chip used does not pass through solution into hole and design of portalling, it is therefore desirable to be packaged again to chip after injecting solution.
In encapsulation process it is noted that: cannot use hand contact chip surface, avoid chip from polluting；The solution of injection is appropriate, amount of solution mistake
It will affect the fitting of bottom crown on chip more；Amount of solution is very few, has bubble after encapsulation in chip, and can be quick in operating process
Evaporation.
The beneficial effects of the present invention are: bright dark light intensity difference can be obtained using laser interference pattern light field as light source
It is worth bigger light field pattern；Requirement to required optical system is lower, and optical system is simpler；It can reduce the picture of device generation
Difference is conducive to manipulate and observe particle movement.
Detailed description of the invention
Fig. 1 is light-induction dielectrophoresis apparatus structure schematic diagram；
Wherein 1 is laser interference system, and 2 be optical system, and 3 be light-induction dielectrophoresis chip, and 4 be signal generator, and 5 are
Microscopic system, 6 be ccd image sensor-based system.
Fig. 2 is laser interference system schematic diagram；
Wherein 21 be 1:2 beam splitting lens, and 23 be 1:1 beam splitting lens, and 24 be the first special lens, and 28 is special for second
Mirror, 22 be the first total reflective mirror, and 25 be the second total reflective mirror, and 26 be third total reflective mirror, and 27 be the 4th total reflective mirror.
Fig. 3 is schematic diagram of optical system；
Wherein 31 be the first positive lens, and 32 be the second positive lens, and 33 be reflecting mirror.
Fig. 4 is light-induction dielectrophoresis chip structure schematic diagram；
Wherein 41 be light field pattern, and 42 be the first sheet glass, and 45 be the second sheet glass, and 43 be the first conductive layer, and 46 be the
Two conductive layers, 44 be photosensitive layer, and 47 be solution, and 48 be particle.
Fig. 5 is the interference figure of simulation being observed that.
Specific embodiment
The present invention is described in further details with reference to the accompanying drawing.
The interference figure light field that the present apparatus uses laser interference to generate is as light source, such as Fig. 2 institute of laser interference system 1
Show, the light that laser issues is divided into two bundles the light that light intensity is 1:2 through 1:2 beam splitting lens 21, and the high light beam of light intensity is divided saturating through 1:1
Mirror 23 is divided into two-beam identical light by force, wherein the light beam transmitted successively passes through the second total reflective mirror 25, third total reflective mirror 26,
The reflection of four total reflective mirrors 27, converges at the first special lens 24 with the light beam reflected by 1:1 beam splitting lens 23, then with it is complete by first
The light beam that anti-mirror 22 reflects converges at the second special lens 28, since three beams light frequency is identical, constant phase difference, and direction of vibration one
It causes, can occur to stablize interference along the direction of propagation of light.And interference pattern can be changed by adjusting the position of reflecting mirror
The parameter of case changes position of the light field relative to light-induction dielectrophoresis chip by micro-displacement platform.
It will be seen from figure 1 that interference figure is needed by by the first positive lens 31, the second positive lens 32 and 33 groups of reflecting mirror
At optical system 2, which can converge light intensity, and adjustable be irradiated on light-induction dielectrophoresis chip 3
Interference figure light field size.The upper layer and lower layer conductive film (the first conductive layer 43, the second conductive layer 46) and signal of chip in Fig. 4
Generator 4 is connected.When light field pattern 41 is irradiated to light-induction dielectrophoresis chip 3, photosensitive layer 44 is electric by the part that light irradiates
Resistive is small, generates non-uniform electric field, and particle 48 in the solution polarizes in non-uniform electric field, generates displacement.It is logical
Overregulate the output parameter of signal generator 4, thus it is possible to vary 48 stress condition of particle.It is micro- when moving three dimension micro-displacement platform
With the relative movement of light field pattern 41 corresponding change can occur for grain 48, achieve the purpose that mobile.Because of different particle property itself
Matter is different, and motion mode is different under identical current field condition, so the device can also screen different particles.Pass through microscope system
Light field pattern and particle movement can be observed in real time in system 5 and ccd image sensor-based system 6.
Interference figure is periodical circle battle array as seen from Figure 5, and light intensity is most weak at circle center, adjacent three triangular in shape
Light is most strong at circle center, and particle can be limited in light intensity most strength.This is because when the photosensitive layer in light-induction dielectrophoresis chip 3
After 44 by illumination, resistance can obviously become smaller, and generate non-uniform electric field in the solution, and pole occurs in non-uniform electric field for particle
Change, generates displacement, eventually settle at light intensity most strength.
Using laser interference pattern light field as light source, the bigger light field pattern of the strong difference of bright half-light can be obtained；It is right
The requirement of required optical system is lower, and optical system is simpler；The aberration that can reduce device generation is conducive to manipulate and observe
Particle movement.
Above embodiments are provided just for the sake of the description purpose of the present invention, and are not intended to limit the scope of the invention.This
The range of invention is defined by the following claims.It does not depart from spirit and principles of the present invention and the various equivalent replacements made and repairs
Change, should all cover within the scope of the present invention.
Claims (2)
1. light-induction dielectrophoresis device of a kind of laser interference pattern light field as light source, it is characterized in that: including laser interference
System (1), optical system (2), light-induction dielectrophoresis chip (3), signal generator (4), microscopic system (5) and ccd image
Sensor-based system (6), the laser of laser transmitting generate interference figure after laser interference system (1), and interference figure is light and shade phase
Between pattern, the laser interference pattern light field is as light source used in device, and laser interference system is by a 1:2 beam splitting lens
(21), a 1:1 beam splitting lens (23), two special lens (24,28), four total reflective mirror (22,25,26,27) compositions, effect
It is laser is divided into three beams frequency identical, constant phase difference, the consistent light of direction of vibration, and is allowed to interfere, needed for generation
Interference figure, two special lens are respectively the first special lens (24) and the second special lens (28), four total reflective mirrors (22,
It 25, is respectively 26,27) the first total reflective mirror (22), the second total reflective mirror (25), third total reflective mirror (26) and the 4th total reflective mirror (27)；
Optical system (2) is made of two positive lens (31,32) and a reflecting mirror (33), and effect is convergence light intensity, and laser is done
Relate to patterned light field bright pattern dimension adjust to manipulation particle diameter it is close, two positive lens (31,32) are respectively first
Positive lens (31) and the second positive lens (32)；Light-induction dielectrophoresis chip (3) is fixed on the adjustable three-dimensional micro-displacement of Three Degree Of Freedom
Platform, is divided into lower layer and upper layer, and lower layer is followed successively by the first sheet glass (42), the first conductive layer (43), photosensitive layer from top to bottom
(44), upper layer is followed successively by the second sheet glass (45), the second conductive layer (46) from top to bottom；Wherein, 1:2 beam splitting lens is by light point
It is by force the lens of the light of 1:2 for two-beam, 1:1 beam splitting lens is the lens that light is divided into two bundles to the identical light of light intensity；
Wherein, the front of the first special lens (24) and the second special lens (28) is reflectance coating, and reflectivity reaches when 45° angle incidence
To 93%, the back side is anti-reflection film, and transmitance reaches 93% when 45° angle incidence, and special lens thickness is no more than 1mm.
2. light-induction dielectrophoresis device of the laser interference pattern light field according to claim 1 as light source, feature
Be: the first conductive layer (43), the second conductive layer (46) are indium oxide tin film, and with a thickness of 100nm -140nm, photosensitive layer (44) is
Hydrogenated amorphous silicon film, with a thickness of 450nm -550nm.
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| CN109725044B (en) * | 2018-12-29 | 2021-02-19 | 长春理工大学 | Cell screening device based on focusing planar polaroid and light-induced dielectrophoresis |
| CN109865485B (en) * | 2019-03-06 | 2021-05-11 | 广东工业大学 | Directional moving method for micro objects |
| CN111908421B (en) * | 2020-07-31 | 2024-01-05 | 江南大学 | Micro-nano self-assembly operation method and system based on photoinduction dielectrophoresis |
| CN113312829B (en) * | 2021-05-26 | 2022-07-26 | 江南大学 | Micro-nano particle movement control method based on data-driven ODEP kinematic model |
| CN113654971B (en) * | 2021-07-21 | 2022-11-01 | 长春理工大学 | Photoinduction electrode scanning microscope and method for measuring electrical characteristics of biological cells |
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| CN102012561A (en) * | 2010-09-20 | 2011-04-13 | 长春理工大学 | Method and system for realizing phase shift in laser interference lithography |
| CN103852975A (en) * | 2012-11-30 | 2014-06-11 | 长春理工大学 | Method for preparing dual-period nanostructure through laser interference nanolithography |
| CN106350847A (en) * | 2016-09-19 | 2017-01-25 | 长春理工大学 | Method using laser interference to induce electrochemical deposition so as to prepare periodic and patterned Fe3O4 nano particles |
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| US9323039B2 (en) * | 2012-11-06 | 2016-04-26 | Industrial Technology Research Institute | Particle manipulation system and projection device |
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|---|---|---|---|---|
| CN102012561A (en) * | 2010-09-20 | 2011-04-13 | 长春理工大学 | Method and system for realizing phase shift in laser interference lithography |
| CN103852975A (en) * | 2012-11-30 | 2014-06-11 | 长春理工大学 | Method for preparing dual-period nanostructure through laser interference nanolithography |
| CN106350847A (en) * | 2016-09-19 | 2017-01-25 | 长春理工大学 | Method using laser interference to induce electrochemical deposition so as to prepare periodic and patterned Fe3O4 nano particles |
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