CN107357034A - A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source - Google Patents

A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source Download PDF

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Publication number
CN107357034A
CN107357034A CN201710649227.2A CN201710649227A CN107357034A CN 107357034 A CN107357034 A CN 107357034A CN 201710649227 A CN201710649227 A CN 201710649227A CN 107357034 A CN107357034 A CN 107357034A
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light
interference
laser
lens
induction dielectrophoresis
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CN107357034B (en
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王作斌
杨焕洲
董莉彤
陈思兰
王璐
郝博
邸旭
宋正勋
翁占坤
许红梅
李理
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Changchun University of Science and Technology
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00Microscopes
    • G02B21/36Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00Microscopes
    • G02B21/36Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • G02B21/365Control or image processing arrangements for digital or video microscopes

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  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
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  • Computer Vision & Pattern Recognition (AREA)
  • Microscoopes, Condenser (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The invention discloses a kind of light-induction dielectrophoresis device of laser interference pattern light field as light source, interference figure light field is produced using laser interference system, by optical system, irradiate light-induction dielectrophoresis chip, change photosensitive layer resistance in chip, the non-uniform electric field changed with light field is produced in the solution layer of chip, so as to control the microcosmic particle in solution to move.The bigger light field pattern of the strong difference of bright half-light can be obtained by the use of laser interference pattern light field as light source;Requirement to required optical system is lower, and optical system is simpler;Aberration caused by device can be reduced, be advantageous to manipulate and observe particle movement.

Description

A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source
Technical field
The present invention relates to micro-nano control field, more particularly to light-induction dielectrophoresis field, is a kind of laser interference pattern Change light-induction dielectrophoresis device of the light field as light source.
Background technology
Observation and manipulation for micro-nano size objects are the micro-nano science of research and realize the core technology of minute manufacturing One of.As physics, chemistry, biotechnology develop rapidly, detection and tracking to micro-nano particle, and further manipulate, Increasingly paid close attention to by scientists.Traditional technological means can not meet current accurate, quick, efficient testing requirements, light Induction dielectrophoresis technology arises at the historic moment.
Light-induction dielectrophoresis is a kind of manipulation technology for being combined optical electrode with dielectrophoresis method.With optical electrode generation For traditional physical electrode, from operating function is determined, to design electrode and come into operation, the required cycle is extremely short, avoids complexity Electrode production process, improve particle manipulation flexibility, reduce electrode machining cost.It is virtual due to dynamic optical can be produced Electrode, therefore the manipulation more complicated to particulate can be realized.
The system architecture of in general light-induction dielectrophoresis device can be divided into 3 parts according to function difference:1) projected area: By projecting apparatus and its computer of connection, lens group, speculum group is into generation, the projection of major control optoelectronic pole pattern, and control Light field pattern moves.2) test section:It is made up of signal generator and its light-induction dielectrophoresis chip of connection, signal generator connects The two conductive layers up and down for connecing chip provide alternating signal, and particulate is manipulated in chip solution layer.3) area of observation coverage:Shown by optics The computer composition of micro mirror, charge coupling device (CCD) and its connection, light microscope and CCD are placed in above chip, by chip The position of portion's particle and operating situation Real-time Feedback are to computer screen.
Existing light-induction dielectrophoresis device typically uses projecting apparatus as light source, because the optical system of projecting apparatus is in itself It is relatively simple, so having the following disadvantages:1) the strong difference of the bright half-light of image being projected out is smaller, caused light-induction dielectrophoresis power It is small.2) inherently there is certain deviation in the image being projected out, and the angle of divergence be present to expanded view picture, so corresponding optics System is not easy to design and adjusted.3) it is larger that aberration is produced after optical system, is unfavorable for manipulating and observing particle movement.
The content of the invention
The invention solves technical problem to be:1) the strong difference of the bright half-light of image being projected out is smaller, and caused photoinduction is situated between Electrophoretic force is small, 2) optical system is not easy to design and adjusted, 3) that aberration is produced after optical system is larger.The invention provides one Light-induction dielectrophoresis device of the kind laser interference pattern light field as light source, light is used as by the use of laser interference pattern light field Source, the bigger light field pattern of the strong difference of bright half-light can be obtained;Requirement to required optical system is lower, and optical system is simpler It is single;Aberration caused by device can be reduced, be advantageous to manipulate and observe particle movement.
Technical scheme is as follows used by the present invention solves above-mentioned technical problem:
A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source, including laser interference system, light System, light-induction dielectrophoresis chip, signal generator, microscopic system and ccd image sensor-based system, laser transmitting swash Light produces interference figure after laser interference system, and interference figure is light and dark pattern, and the interference figure light field is as dress Light source used is put, described laser interference system is by one 1:2 beam splitting lenses, one 1:1 beam splitting lens, two special lens, Four total reflective mirrors composition, effect is laser is divided into three beams frequency identical, constant phase difference, the consistent light of direction of vibration, and is allowed to Interfere, interference figure needed for generation, two special lens are respectively the first special lens and the second special lens, and four complete Anti- mirror is respectively the first total reflective mirror, the second total reflective mirror, the 3rd total reflective mirror and the 4th total reflective mirror;Optical system by two positive lens and One speculum group is convergence light intensity into, effect, and the bright rays width adjusting of interference figure light field is arrived and to manipulate particle straight Footpath is close, and two positive lens are respectively the first positive lens and the second positive lens;Light-induction dielectrophoresis chip is divided into lower floor and upper strata, Lower floor is followed successively by the first sheet glass, the first conductive layer, photosensitive layer from top to bottom, upper strata be followed successively by from top to bottom the second sheet glass, Second conductive layer.
Further, the first conductive layer, the second conductive layer are indium oxide tin film, and thickness is 100nm -140nm, photosensitive layer For hydrogenated amorphous silicon film, thickness is 450nm -550nm.
The principle of the present invention is:
A kind of light-induction dielectrophoresis device of laser interference pattern as light source, including:Laser interference system 1, optical system System 2, light-induction dielectrophoresis chip 3, signal generator 4, microscopic system 5, ccd image sensor-based system 6.
Light-induction dielectrophoresis device of the laser interference pattern light field proposed according to embodiments of the present invention as light source, it is Distinguished with the maximum of other same devices, and the prioritization scheme of the present invention, light source used are that laser produces after interference system Light and dark interference figure light field.In order to obtain satisfactory interference figure, laser interference system 1 is devised.
Laser interference system 1 is as shown in Fig. 2 laser interference system 1 used in the embodiment of the present invention is Three-beam Interfere Single particulate can be moved to ad-hoc location by system, caused interference figure, and the system is by one 1:2 beam splitting lenses 21, one Individual 1:1 beam splitting lens, two special lens (the first special lens 24, the second special lens 28), (first is all-trans four total reflective mirrors Mirror 22, the second total reflective mirror 25, the 3rd total reflective mirror 26, the 4th total reflective mirror 27) composition, the effect of lens is to be divided into light beam to send out The three-beam of raw interference, the effect of total reflective mirror are to change the propagation path of light beam.Optical path difference is changed by mobile total reflective mirror, from And change interference figure.Different pattern and the interference figure of size can be obtained by changing laser interference system.Pass through microbit Position of the light field relative to light-induction dielectrophoresis chip can be changed by moving platform.The laser interference system 1 of design makes three-beam exist Start that stable interference occurs along the direction of propagation of light at second special lens 28.
Corresponding optical system 2 is needed after designing interference system as shown in figure 3, to converge light intensity and adjustment interference pattern The size of case.Bright pattern dimension in interference figure is close with manipulated particle size.Each lens used in optical system A part of light will be absorbed, so the light intensity that lens finally obtain more at least is higher.Optical system used in the embodiment of the present invention System is made up of two positive lens (the first positive lens 31, the second positive lens 32) and a speculum 33, and the effect of positive lens is to converge Optically focused is strong, and interference figure regulation is arrived to the size for being adapted to manipulate and observe particle movement.The effect of speculum is to change interference The propagation path of pattern, it is allowed to be irradiated to the horizontal positioned lower surface of light-induction dielectrophoresis chip 3.
Light-induction dielectrophoresis chip 3 as shown in figure 4, be divided into lower floor and upper strata, lower floor be followed successively by from top to bottom sheet glass 42, First conductive layer 43, photosensitive layer 44, upper strata are followed successively by sheet glass 45, the second conductive layer 46 from top to bottom.Work as laser interference pattern When change light field is irradiated to light-induction dielectrophoresis chip 3, the resistance of the relevant position of photosensitive layer 44 changes, uneven so as to produce Electric field, particulate is polarized, produce displacement.
Microscopic system 5 is made up of microscope and microscope illumination light source, and ccd image sensor-based system 6 is by CCD and computer Composition, without particular/special requirement.
In addition, laser interference pattern light field according to the above embodiment of the present invention fills as the light-induction dielectrophoresis of light source Technical characteristic additional as follows can also be had by putting:
In an embodiment of the present invention, the laser is Nd:YAG (neodymium-doped yttrium-aluminum garnet) solid state laser, it is used The a length of 532nm obtained by frequency multiplication of laser beam-wave.
Further, in an embodiment of the present invention, sheet glass is 3cm × 3cm × 0.07cm in the chip, conductive layer Tin indium oxide film thickness is 120nm, and the hydrogenated amorphous silicon thickness of photosensitive layer is 500nm.
Further, in an embodiment of the present invention, chip is sealed from the 3M narrow side double faced adhesive tapes that thickness is 50 μm Dress.The chip used does not enter hole by solution and design of portalling, it is therefore desirable to chip is packaged again after solution is injected. In encapsulation process it is noted that:Hand contact chip surface can not be used, avoids chip from polluting;The solution of injection is appropriate, amount of solution mistake The fitting of bottom crown on chip can be influenceed more;Amount of solution is very few, has bubble after encapsulation in chip, and can be quick in operating process Evaporation.
The beneficial effects of the invention are as follows:By the use of laser interference pattern light field as light source, bright dark light intensity difference can be obtained The bigger light field pattern of value;Requirement to required optical system is lower, and optical system is simpler;Picture caused by device can be reduced Difference, be advantageous to manipulate and observe particle movement.
Brief description of the drawings
Fig. 1 is light-induction dielectrophoresis apparatus structure schematic diagram;
Wherein 1 is laser interference system, and 2 be optical system, and 3 be light-induction dielectrophoresis chip, and 4 be signal generator, and 5 are Microscopic system, 6 be ccd image sensor-based system.
Fig. 2 is laser interference system schematic diagram;
Wherein 21 be 1:2 beam splitting lenses, 23 be 1:1 beam splitting lens, 24 be the first special lens, and 28 be second special Mirror, 22 be the first total reflective mirror, and 25 be the second total reflective mirror, and 26 be the 3rd total reflective mirror, and 27 be the 4th total reflective mirror.
Fig. 3 is optical system schematic diagram;
Wherein 31 be the first positive lens, and 32 be the second positive lens, and 33 be speculum.
Fig. 4 is light-induction dielectrophoresis chip structure schematic diagram;
Wherein 41 be light field pattern, and 42 be the first sheet glass, and 45 be the second sheet glass, and 43 be the first conductive layer, and 46 be Two conductive layers, 44 be photosensitive layer, and 47 be solution, and 48 be particulate.
Fig. 5 is the interference figure being observed that of simulation.
Embodiment
The present invention is described in further details below in conjunction with the accompanying drawings.
The present apparatus uses interference figure light field caused by laser interference as light source, such as Fig. 2 institutes of laser interference system 1 Show, the light that laser is sent is through 1:It is 1 by force that 2 beam splitting lenses 21, which divide for two-beam,:2 light, the high light beam of light intensity is through 1:1 light splitting is saturating Mirror 23 is divided into the strong identical light of two-beam, wherein the light beam transmitted is successively by the second total reflective mirror 25, the 3rd total reflective mirror 26, the The reflection of four total reflective mirrors 27, and by 1:The light beam of 1 beam splitting lens 23 reflection converges at the first special lens 24, then with it is complete by first The light beam that anti-mirror 22 reflects converges at the second special lens 28, because three beams light frequency is identical, constant phase difference, and direction of vibration one Cause, stable interference can occur along the direction of propagation of light.And interference pattern can be changed by adjusting the position of speculum The parameter of case, position of the light field relative to light-induction dielectrophoresis chip is changed by micro-displacement platform.
It will be seen from figure 1 that interference figure is needed by by 33 groups of the first positive lens 31, the second positive lens 32 and speculum Into optical system 2, the optical system can converge light intensity, and can adjust and be irradiated on light-induction dielectrophoresis chip 3 Interference figure light field size.Two layers of conducting film (the first conductive layer 43, the second conductive layer 46) and the signal up and down of Fig. 4 chips Generator 4 is connected.When light field pattern 41 is irradiated to light-induction dielectrophoresis chip 3, part electricity of the photosensitive layer 44 by light irradiation Resistive is small, produces non-uniform electric field, and particulate 48 in the solution polarizes in non-uniform electric field, produces displacement.It is logical Overregulate the output parameter of signal generator 4, thus it is possible to vary the stressing conditions of particulate 48.It is micro- when moving three dimension micro-displacement platform With the relative movement of light field pattern 41 respective change can occur for grain 48, reach mobile purpose.Because different particulates property itself Matter is different, and motion mode is different under identical current field condition, so the device can also screen different particulates.Pass through microscope system System 5 and ccd image sensor-based system 6 can be with Real Time Observation light field pattern and particle movements.
Interference figure is periodically circle battle array as seen from Figure 5, and light intensity is most weak at circle center, adjacent three triangular in shape Light is most strong at circle center, and particulate can be limited in light intensity most strength.Because when the photosensitive layer in light-induction dielectrophoresis chip 3 44 by after illumination, and resistance can substantially diminish, and produce non-uniform electric field in the solution, and pole occurs in non-uniform electric field for particulate Change, produce displacement, eventually settle at light intensity most strength.
By the use of laser interference pattern light field as light source, the bigger light field pattern of the strong difference of bright half-light can be obtained;It is right The requirement of required optical system is lower, and optical system is simpler;Aberration caused by device can be reduced, be advantageous to manipulate and observe Particle movement.
Above example is provided just for the sake of the description purpose of the present invention, and is not intended to limit the scope of the present invention.This The scope of invention is defined by the following claims.The various equivalent substitutions that do not depart from spirit and principles of the present invention and make and repair Change, all should cover within the scope of the present invention.

Claims (3)

1. a kind of light-induction dielectrophoresis device of laser interference pattern light field as light source, it is characterized in that:Including laser interference System (1), optical system (2), light-induction dielectrophoresis chip (3), signal generator (4), microscopic system (5) and ccd image Sensor-based system (6), the laser of laser transmitting produce interference figure after laser interference system (1), and interference figure is light and shade phase Between pattern, the interference figure light field is as light source used in device, by one 1:2 beam splitting lenses (21), one 1:1 beam splitting lens (23), two special lens (24,28), four total reflective mirror (22,25,26,27) compositions, effect is that laser is divided into three beams frequency It is identical, constant phase difference, the consistent light of direction of vibration, and be allowed to interfere, interference figure needed for generation, two special lens Respectively first special lens (24) and the second special lens (28), four total reflective mirrors (22,25,26,27) are respectively first complete Anti- mirror (22), the second total reflective mirror (25), the 3rd total reflective mirror (26) and the 4th total reflective mirror (27);Optical system (2) is just saturating by two Mirror (31,32) and speculum (33) composition, effect is convergence light intensity, and the bright pattern dimension of interference figure light field is adjusted Save with manipulation mean particle dia it is close, two positive lens (31,32) are respectively the first positive lens (31) and the second positive lens (32); Light-induction dielectrophoresis chip (3) is fixed on the adjustable three-dimensional micro-displacement platform of Three Degree Of Freedom, is divided into lower floor and upper strata, lower floor is under To the first sheet glass (42), the first conductive layer (43), photosensitive layer (44) is above followed successively by, upper strata is followed successively by the second glass from top to bottom Piece (45), the second conductive layer (46).
2. light-induction dielectrophoresis device of the laser interference pattern light field according to claim 1 as light source, its feature It is:The front of first special lens (24) and the second special lens (28) is reflectance coating, and reflectivity reaches during 45° angle incidence 93%, its back side is anti-reflection film, and transmitance reaches 93% during 45° angle incidence, and special lens thickness is no more than 1mm.
3. light-induction dielectrophoresis device of the laser interference pattern light field according to claim 1 as light source, its feature It is:First conductive layer (43), the second conductive layer (46) are indium oxide tin film, and thickness is 100nm -140nm, and photosensitive layer (44) is Hydrogenated amorphous silicon film, thickness are 450nm -550nm.
CN201710649227.2A 2017-08-02 2017-08-02 A kind of light-induction dielectrophoresis device of laser interference pattern light field as light source Active CN107357034B (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109725044A (en) * 2018-12-29 2019-05-07 长春理工大学 Based on the cell sorting devices for dividing focal plane type polarizing film and light-induction dielectrophoresis
CN109865485A (en) * 2019-03-06 2019-06-11 广东工业大学 A kind of displacement method of small items
CN111908421A (en) * 2020-07-31 2020-11-10 江南大学 Micro-nano self-assembly operation method and system based on light-induced dielectrophoresis
CN113312829A (en) * 2021-05-26 2021-08-27 江南大学 Micro-nano particle movement control method based on data-driven ODEP kinematic model
CN113654971A (en) * 2021-07-21 2021-11-16 长春理工大学 Photoinduction electrode scanning microscope and method for measuring electrical characteristics of biological cells

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CN102012561A (en) * 2010-09-20 2011-04-13 长春理工大学 Method and system for realizing phase shift in laser interference lithography
US20140124373A1 (en) * 2012-11-06 2014-05-08 Industrial Technology Research Institute Particle manipulation system and projection device
CN103852975A (en) * 2012-11-30 2014-06-11 长春理工大学 Method for preparing dual-period nanostructure through laser interference nanolithography
CN106350847A (en) * 2016-09-19 2017-01-25 长春理工大学 Method using laser interference to induce electrochemical deposition so as to prepare periodic and patterned Fe3O4 nano particles

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102012561A (en) * 2010-09-20 2011-04-13 长春理工大学 Method and system for realizing phase shift in laser interference lithography
US20140124373A1 (en) * 2012-11-06 2014-05-08 Industrial Technology Research Institute Particle manipulation system and projection device
CN103852975A (en) * 2012-11-30 2014-06-11 长春理工大学 Method for preparing dual-period nanostructure through laser interference nanolithography
CN106350847A (en) * 2016-09-19 2017-01-25 长春理工大学 Method using laser interference to induce electrochemical deposition so as to prepare periodic and patterned Fe3O4 nano particles

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109725044A (en) * 2018-12-29 2019-05-07 长春理工大学 Based on the cell sorting devices for dividing focal plane type polarizing film and light-induction dielectrophoresis
CN109725044B (en) * 2018-12-29 2021-02-19 长春理工大学 Cell screening device based on focusing planar polaroid and light-induced dielectrophoresis
CN109865485A (en) * 2019-03-06 2019-06-11 广东工业大学 A kind of displacement method of small items
CN111908421A (en) * 2020-07-31 2020-11-10 江南大学 Micro-nano self-assembly operation method and system based on light-induced dielectrophoresis
CN111908421B (en) * 2020-07-31 2024-01-05 江南大学 Micro-nano self-assembly operation method and system based on photoinduction dielectrophoresis
CN113312829A (en) * 2021-05-26 2021-08-27 江南大学 Micro-nano particle movement control method based on data-driven ODEP kinematic model
CN113312829B (en) * 2021-05-26 2022-07-26 江南大学 Micro-nano particle movement control method based on data-driven ODEP kinematic model
CN113654971A (en) * 2021-07-21 2021-11-16 长春理工大学 Photoinduction electrode scanning microscope and method for measuring electrical characteristics of biological cells
CN113654971B (en) * 2021-07-21 2022-11-01 长春理工大学 Photoinduction electrode scanning microscope and method for measuring electrical characteristics of biological cells

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