CN110060712A - 固态储存装置 - Google Patents

固态储存装置 Download PDF

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Publication number
CN110060712A
CN110060712A CN201810053474.0A CN201810053474A CN110060712A CN 110060712 A CN110060712 A CN 110060712A CN 201810053474 A CN201810053474 A CN 201810053474A CN 110060712 A CN110060712 A CN 110060712A
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CN
China
Prior art keywords
heat dissipation
semiconductor packages
solid state
storage device
dissipation groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810053474.0A
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English (en)
Inventor
施昱廷
洪晨维
陈佳良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Global Unichip Corp
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Global Unichip Corp
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Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd, Global Unichip Corp filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority to CN201810053474.0A priority Critical patent/CN110060712A/zh
Priority to US15/985,727 priority patent/US11201100B2/en
Publication of CN110060712A publication Critical patent/CN110060712A/zh
Pending legal-status Critical Current

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Abstract

一种固态储存装置，包含一机壳、一配线板及一半导体封装单元。机壳包含一散热凹槽。配线板固定于机壳内。半导体封装单元嵌入散热凹槽内。半导体封装单元的底面固接该配线板，半导体封装单元的顶面与侧面皆于散热凹槽内热连接机壳。如此，通过以上实施例所述架构，不仅能够提高散热效率，进而改善系统稳定度及延长产品寿命，更能有效降低整体厚度。

Description

固态储存装置
技术领域
本发明有关于一种固态储存装置，尤指一种具有散热凹槽的固态储存装置。
背景技术
一般而言，固态硬盘(Solid-State Driver，SSD)，具有读写速度快、存储容量大、物理尺寸小与抗震性佳等优点，所以固态硬盘逐渐得到广泛应用。
然而，由于固态硬盘不断朝小型化的外型发展，使得内部空间不断缩小，且其内的控制单元等发热源必须紧密排列，伴随而来的散热问题也日益严重，将导致大量工作下的处理单元因为温度过高而烧毁。
故，如何研发出一种解决方案以改善上述所带来的缺失及不便，实乃相关业者目前刻不容缓的一重要课题。
发明内容
本发明的一实施例提供了一种固态储存装置。固态储存装置包含一机壳、一配线板及一半导体封装单元。机壳包含一盖板、一底盖与一散热凹槽。散热凹槽形成于盖板上。盖板盖合底盖以共同形成一容置空间。配线板固定于容置空间内。半导体封装单元嵌入散热凹槽内，半导体封装单元具有一顶面、一底面与多个侧面。底面相对顶面、邻接这些侧面且固接配线板。顶面与这些侧面皆于散热凹槽内热连接机壳。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，盖板具有一内表面与一外表面。散热凹槽形成于盖板的内表面，且散热凹槽具有一底壁与多个内壁面。底壁邻接这些内壁面，且为这些内壁面所包围。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，半导体封装单元的顶面直接接触散热凹槽的底壁，且半导体封装单元的这些侧面分别直接接触散热凹槽的这些内壁面。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，固态储存装置还包含一导热介质。导热介质具可挠性，位于散热凹槽内，介于半导体封装单元与盖板之间。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，导热介质直接接触半导体封装单元的顶面与散热凹槽的底壁，半导体封装单元的这些侧面分别直接接触散热凹槽的这些内壁面。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，导热介质的一部分直接接触半导体封装单元的顶面与散热凹槽的底壁，导热介质的另一部分分别直接接触半导体封装单元的这些侧面与散热凹槽的这些内壁面。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，盖板具有一内表面与一外表面。内表面与外表面彼此相对。散热凹槽贯通盖板，且连接内表面与外表面。散热凹槽具有多个内侧壁。机壳还包含一导热片，导热片覆盖于盖板的外表面。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，半导体封装单元的这些侧面分别直接接触散热凹槽的这些内侧壁，且导热片直接接触半导体封装单元的顶面。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，固态储存装置还包含一导热介质。导热介质具可挠性，位于散热凹槽内，介于半导体封装单元与导热片之间。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，导热介质直接接触半导体封装单元的顶面与导热片，半导体封装单元的侧面分别直接接触散热凹槽的内侧壁。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，导热介质还介于半导体封装单元与盖板之间。导热介质的一部分直接接触半导体封装单元的顶面与导热片。导热介质的另一部分分别直接接触半导体封装单元的这些侧面与散热凹槽的这些内侧壁。
依据本发明一或多个实施例，在上述各实施例的固态储存装置中，半导体封装单元至少部分地位于散热凹槽内。
如此，通过以上实施例所述架构，不仅能够提高散热效率，进而改善系统稳定度及延长产品寿命，更能有效降低整体厚度。
以上所述仅系用以阐述本发明所欲解决的问题、解决问题的技术手段、及其产生的功效等等，本发明的具体细节将在下文的实施例及相关附图中详细介绍。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附附图的说明如下：
图1绘示本发明第一实施例的固态储存装置的示意图；
图2绘示图1的固态储存装置的分解图；
图3绘示图2的盖板的上视图；
图4绘示本发明第二实施例的固态储存装置的示意图；
图5绘示本发明第三实施例的固态储存装置的示意图；
图6绘示本发明第四实施例的固态储存装置的示意图；
图7绘示图6的固态储存装置的分解图；
图8绘示本发明第五实施例的固态储存装置的示意图；
图9绘示本发明第六实施例的固态储存装置的示意图；以及
图10绘示本发明第七实施例的固态储存装置的分解图。
具体实施方式
以下将以附图揭露本发明的多个实施例，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明实施例中，这些实务上的细节是非必要的。此外，为简化附图起见，一些已知惯用的结构与元件在附图中将以简单示意的方式绘示。
第一实施例
图1绘示本发明第一实施例的固态储存装置10的示意图。图2绘示图1的固态储存装置10的分解图。如图1与图2所示，在本实施例中，固态储存装置10包含一机壳100、一配线板200及至少一半导体封装单元300。机壳100包含一盖板110、一底盖120与至少一散热凹槽140。盖板110能够与底盖120相互盖合，使得盖板110与底盖120之间共同形成一容置空间130。配线板200固定于容置空间130内，例如，配线板200透过螺栓B锁固于底盖120上，然而，本发明不限于此。散热凹槽140形成于盖板110上。半导体封装单元300位于机壳100内，一方面固接于配线板200的一面，另一方面嵌入于散热凹槽140内。
具体来说，半导体封装单元300具有一顶面310、一底面320与多个侧面330。底面320相对顶面310配置，底面320透过焊接单元350(例如焊球阵列)焊接于配线板200的一面上。顶面310与底面320分别邻接这些侧面330。这些侧面330分别位于顶面310与底面320之间，且共同围绕顶面310与底面320。当盖板110覆盖配线板200时，位于散热凹槽140内的半导体封装单元300的顶面310与这些侧面330皆于散热凹槽140内热连接机壳100。
如此，由于半导体封装单元300的顶面310与所有侧面330皆于散热凹槽140内热连接机壳100，不仅提供更多的导热路径，以提高散热效率，进而改善系统稳定度及延长产品寿命，还能有效降低固态储存装置10的整体厚度。
在本实施例中，具体来说，盖板110呈板状，具有一内表面111与一外表面112。内表面111大致呈平面状，且内表面111相对外表面112配置。散热凹槽140形成于盖板110的内表面111，且从内表面111朝外表面112的方向凹陷，换句话说，散热凹槽140为一种盲孔。更具体地，散热凹槽140具有一底壁141与多个内壁面142。这些内壁面142共同包围底壁141，且分别邻接底壁141。当配线板200覆盖至盖板110的内表面111时，半导体封装单元300伸入散热凹槽140内，使得半导体封装单元300的顶面310直接接触散热凹槽140的底壁141，且半导体封装单元300的这些侧面330分别直接接触散热凹槽140的这些内壁面142。较佳地，半导体封装单元300的顶面310的全部面积直接贴合且接触散热凹槽140的底壁141，且每个侧面330的全部面积直接贴合且接触散热凹槽140的其中一内壁面142。此外，盖板110的材料为铝或铜金属或其他高导热材料。然而，本发明不限于此。
图3绘示图2的盖板110的上视图。如图2与图3所示，在本实施例中，盖板110具有外凸缘114，外凸缘114围绕内表面111与散热凹槽140，用以结合至底盖120上。散热凹槽140的开口大小大致等于半导体封装单元300的面积大小，且散热凹槽140的深度143大致等于半导体封装单元300的厚度340。由于半导体封装单元300的体积与散热凹槽140的容积相同，半导体封装单元300能够匹配地完全嵌入散热凹槽140内。换句话说，半导体封装单元300的顶面310恰好重叠散热凹槽140的底壁141，且半导体封装单元300的这些侧面330分别恰好重叠散热凹槽140的这些内壁面142。然而，本发明不限于此，其他实施例中，半导体封装单元也可能只有一部分位于散热凹槽内，使得另部分凸出于散热凹槽之外。在本实施例中，半导体封装单元300的厚度340小于盖板110的厚度113，然而，本发明不限于此。
此外，在一模拟测试中，不具本实施例的技术特征的已知固态储存装置的模拟温度高达115.2℃，反观，本实施例中的固态储存装置10的模拟温度只有108.8℃。
需定义的是，本发明所述的半导体封装单元300包含一或多个半导体元件、焊球及封胶体(图中未示)。半导体元件电性连接焊球。封胶体密封半导体元件并露出焊球，以保护半导体元件。
第二实施例
图4绘示本发明第二实施例的固态储存装置11的示意图。图4的固态储存装置11与图1的固态储存装置10大致雷同，相同的部件沿用相同的符号，图4的固态储存装置11与图1的固态储存装置10差别在于：固态储存装置11还包含一第一导热介质500。第一导热介质500具可挠性，位于散热凹槽140内，直接介于半导体封装单元300与盖板110之间，且第一导热介质500只位于半导体封装单元300的顶面310与散热凹槽140的底壁141之间，其一面覆盖半导体封装单元300的顶面310，另面覆盖散热凹槽140的底壁141。
具体来说，第一导热介质500直接接触半导体封装单元300的顶面310以及散热凹槽140的底壁141与这些内壁面142，且半导体封装单元300的这些侧面330仍旧分别直接接触散热凹槽140的这些内壁面142。较佳地，第一导热介质500的一面直接贴合且接触半导体封装单元300的顶面310的全部面积，第一导热介质500的另面直接贴合且接触散热凹槽140的底壁141的全部面积。第一导热介质500例如为导热橡胶片或导热膏。
此外，在一模拟测试中，不具本实施例的技术特征的已知固态储存装置的模拟温度高达115.2℃，反观，本实施例中的固态储存装置11的模拟温度只有110℃。
如此，无论半导体封装单元300的顶面310与散热凹槽140的底壁141能否匹配地贴合，由于第一导热介质500具有可挠性，第一导热介质500得以受形变而分别依附半导体封装单元300的顶面310的表面与散热凹槽140的底壁141的表面，故，半导体封装单元300的热能仍可从半导体封装单元300的顶面310透过第一导热介质500被传递至机壳100，以提高热传递效率。
第三实施例
图5绘示本发明第三实施例的固态储存装置12的示意图。图5的固态储存装置12与图1的固态储存装置10大致雷同，相同的部件沿用相同的符号，图5的固态储存装置12与图1的固态储存装置10差别在于：固态储存装置12还包含一第二导热介质600。第二导热介质600具可挠性，位于散热凹槽140内，包覆半导体封装单元300的顶面310与这些侧面330，并且第二导热介质600位于半导体封装单元300的顶面310与散热凹槽140的底壁141之间，以及位于半导体封装单元300的这些侧面330与散热凹槽140的这些内壁面142之间。
具体来说，第二导热介质600的一部分610直接接触半导体封装单元300的顶面310与散热凹槽140的底壁141，第二导热介质600的另一部分620分别直接接触半导体封装单元300的这些侧面330与散热凹槽140的这些内壁面142。较佳地，第二导热介质600的一部分610直接贴合且接触半导体封装单元300的顶面310的全部面积与散热凹槽140的底壁141的全部面积，第二导热介质600的另一部分620分别直接贴合且接触半导体封装单元300的每个侧面330的全部面积与散热凹槽140的每个内壁面142的全部面积。第二导热介质600例如为导热橡胶片或导热膏。
此外，在一模拟测试中，不具本实施例的技术特征的已知固态储存装置的模拟温度高达115.2℃，反观，本实施例中的固态储存装置12的模拟温度只有105.1℃。
如此，无论半导体封装单元300的顶面310与散热凹槽140的底壁141能否匹配地贴合，以及半导体封装单元300的侧面330与散热凹槽140的内壁面142能否匹配地贴合，由于第二导热介质600具有可挠性，第二导热介质600得以受形变而分别依附半导体封装单元300的顶面310的表面与散热凹槽140的底壁141的表面，以及导体封装单元300的侧面330的表面与散热凹槽140的内壁面142的表面。故，半导体封装单元300的热能仍可从半导体封装单元300的顶面310以及每个侧面330透过第二导热介质600被传递至机壳100，以提高热传递效率。
第四实施例
图6绘示本发明第四实施例的固态储存装置13的示意图。图7绘示图6的固态储存装置13的分解图。图6的固态储存装置13与图1的固态储存装置10大致雷同，相同的部件沿用相同的符号，图6的固态储存装置13与图1的固态储存装置10差别在于：散热凹槽150为贯孔而非盲孔。机壳100还包含一导热片400，导热片400同时覆盖盖板110与散热凹槽150。半导体封装单元300的顶面310与这些侧面330皆于散热凹槽150内分别热连接导热片400与机壳100。
具体来说，盖板110呈板状，具有一内表面111与一外表面112。内表面111相对外表面112配置。散热凹槽150贯通盖板110，且连接内表面111与外表面112。更具体地，散热凹槽150内具有多个内侧壁151。这些内侧壁151共同围绕以形成用以容置半导体封装单元300的空间。导热片400呈薄片状，且导热片400覆盖于盖板110的外表面112。故，当配线板200依附至盖板110的内表面111时，半导体封装单元300伸入散热凹槽150内，使得半导体封装单元300的顶面310直接接触导热片400，且半导体封装单元300的这些侧面330分别直接接触散热凹槽150的这些内侧壁151。较佳地，半导体封装单元300的顶面310的全部面积直接贴合且接触导热片400，每一侧面330的全部面积直接贴合且接触散热凹槽150的其中一内侧壁151。
在本实施例中，散热凹槽150的开口大小大致等于半导体封装单元300的面积大小，且散热凹槽150的深度152大致等于盖板110的厚度113与半导体封装单元300的厚度340。由于半导体封装单元300的体积与散热凹槽150的容积相同，半导体封装单元300匹配地嵌入散热凹槽150内。换句话说，半导体封装单元300的顶面310恰好贴合导热片400，且半导体封装单元300的这些侧面330分别恰好重叠散热凹槽150的这些内侧壁151。然而，本发明不限于此，其他实施例中，半导体封装单元也可能只有一部分位于散热凹槽内，使得另部分凸出于散热凹槽之外，但仍受导热片覆盖。
在本实施例中，导热片400的面积大小大致等于盖板110的外表面112的面积大小。例如，导热片400的厚度401大致为1毫米，然而，本发明不限于此。此外，盖板110的材料为金属或其他高导热材料，导热片400的材料为金属或其他高导热材料，较佳地，导热片400的导热系优于盖板110的导热系数，然而，本发明不限于此。
在一模拟测试中，不具本实施例的技术特征的已知固态储存装置的模拟温度高达115.2℃，反观，本实施例中的固态储存装置13的模拟温度只有108.8℃。
第五实施例
图8绘示本发明第五实施例的固态储存装置14的示意图。图8的固态储存装置14与图6的固态储存装置13大致雷同，相同的部件沿用相同的符号，图8的固态储存装置14与图6的固态储存装置13差别在于：固态储存装置14还包含一第三导热介质700。第三导热介质700具可挠性，位于散热凹槽150内，直接介于半导体封装单元300与导热片400之间，第三导热介质700只位于半导体封装单元300的顶面310与导热片400之间，其一面覆盖半导体封装单元300的顶面310，另面覆盖导热片400。
具体来说，第三导热介质700直接接触半导体封装单元300的顶面310、导热片400与散热凹槽150的这些内侧壁151。半导体封装单元300的这些侧面330分别直接接触散热凹槽150的这些内侧壁151。较佳地，第三导热介质700的一面直接贴合且接触半导体封装单元300的顶面310的全部面积，第三导热介质700的另面直接贴合且接触导热片400。第三导热介质700例如为导热橡胶片或导热膏。
此外，在一模拟测试中，不具本实施例的技术特征的已知固态储存装置的模拟温度高达115.2℃，反观，本实施例中的固态储存装置13的模拟温度只有101.2℃。
如此，无论半导体封装单元300的顶面310与导热片400能否匹配地贴合，由于第三导热介质700具有可挠性，第三导热介质700得以受形变而分别依附半导体封装单元300的顶面310的表面与导热片400的表面，故，半导体封装单元300的热能仍可从半导体封装单元300的顶面310透过第三导热介质700被传递至导热片400与机壳100，以提高热传递效率。
第六实施例
图9绘示本发明第六实施例的固态储存装置15的示意图。图9的固态储存装置15与图6的固态储存装置13大致雷同，相同的部件沿用相同的符号，图9的固态储存装置15与图6的固态储存装置13差别在于：固态储存装置15还包含一第四导热介质800。第四导热介质800具可挠性，位于散热凹槽150内，包覆半导体封装单元300的顶面310与这些侧面330，并且第四导热介质800位于半导体封装单元300的顶面310与导热片400之间，以及位于半导体封装单元300的这些侧面330与散热凹槽150的这些内侧壁151之间。
具体来说，第四导热介质800的一部分810直接接触半导体封装单元300的顶面310与导热片400，第四导热介质800的另一部分820分别直接接触半导体封装单元300的这些侧面330与散热凹槽150的这些内侧壁151。较佳地，第四导热介质800的一部分810直接贴合且接触半导体封装单元300的顶面310的全部与导热片400，第四导热介质800的另一部分820分别直接贴合且接触半导体封装单元300的每个侧面330的全部与散热凹槽150的每个内侧壁151的全部。第四导热介质800例如为导热橡胶片或导热膏。
此外，在一模拟测试中，不具本实施例的技术特征的已知固态储存装置的模拟温度高达115.2℃，反观，本实施例中的固态储存装置15的模拟温度只有101.3℃。
如此，无论半导体封装单元300的顶面310与导热片400能否匹配地贴合，以及半导体封装单元300的侧面330与散热凹槽150的内侧壁151能否匹配地贴合，由于第四导热介质800具有可挠性，第四导热介质800得以受形变而分别依附半导体封装单元300的顶面310的表面与导热片400的表面以及导体封装单元300的侧面330的表面与散热凹槽140的内侧壁151的表面。故，半导体封装单元300的热能仍可从半导体封装单元300的顶面310以及每个侧面330透过第四导热介质800被传递至机壳100与导热片400，以提高热传递效率。
第七实施例
图10绘示本发明第七实施例的固态储存装置16的分解图。图10的固态储存装置16可沿用上述各实施例的固态储存装置10～15，相同的部件沿用相同的符号，图10的固态储存装置16与上述各实施例的固态储存装置10～15差别在于：在第七实施例中，半导体封装单元与散热凹槽不限只为一组，且半导体封装单元不限为一主控芯片或一记忆体单元。
举例来说，固态储存装置16包含一主控芯片301、一随机存取记忆体单元302(如双倍数据率同步动态随机存取记忆体，DDR SDRAM)与一快闪记忆体单元303(如NAND FLASH)。主控芯片301、随机存取记忆体单元302与快闪记忆体单元303分别焊接于配线板200，且盖板110的内表面111分别凹设有第一散热凹槽160、第二散热凹槽170与第三散热凹槽180。故，当盖板110覆盖配线板200时，主控芯片301、随机存取记忆体单元302与快闪记忆体单元303分别匹配地嵌入第一散热凹槽160、第二散热凹槽170与第三散热凹槽180内，分别热连接机壳100的盖板110。
最后，上述所揭露的各实施例中，并非用以限定本发明，任何熟习此技艺者，在不脱离本发明的精神和范围内，当可作各种的更动与润饰，皆可被保护于本发明中。因此本发明的保护范围当视所附的权利要求书所界定的范围为准。

Claims (12)

1.一种固态储存装置，其特征在于，包含：
一机壳，包含一盖板、一底盖与一散热凹槽，该散热凹槽形成于该盖板上，该盖板盖合该底盖以共同形成一容置空间；
一配线板，固定于该容置空间内；以及
一半导体封装单元，嵌入该散热凹槽内，该半导体封装单元具有一顶面、一底面与多个侧面，该底面相对该顶面、邻接所述多个侧面且固接该配线板，该顶面与所述多个侧面皆于该散热凹槽内热连接该机壳。
2.根据权利要求1所述的固态储存装置，其特征在于，该盖板具有一内表面与一外表面，该散热凹槽形成于该内表面上，且该散热凹槽具有一底壁与多个内壁面，该底壁邻接所述多个内壁面，且为所述多个内壁面所包围。
3.根据权利要求2所述的固态储存装置，其特征在于，该半导体封装单元的该顶面直接接触该散热凹槽的该底壁，且该半导体封装单元的所述多个侧面分别直接接触该散热凹槽的所述多个内壁面。
4.根据权利要求2所述的固态储存装置，其特征在于，还包含：
一导热介质，具可挠性，位于该散热凹槽内，介于该半导体封装单元与该盖板之间。
5.根据权利要求4所述的固态储存装置，其特征在于，该导热介质直接接触该半导体封装单元的该顶面与该散热凹槽的该底壁，该半导体封装单元的所述多个侧面分别直接接触该散热凹槽的所述多个内壁面。
6.根据权利要求4所述的固态储存装置，其特征在于，该导热介质的一部分直接接触该半导体封装单元的该顶面与该散热凹槽的该底壁，该导热介质的另一部分分别直接接触该半导体封装单元的所述多个侧面与该散热凹槽的所述多个内壁面。
7.根据权利要求1所述的固态储存装置，其特征在于，该盖板具有彼此相对的一内表面与一外表面，该散热凹槽贯通该盖板，且连接该内表面与该外表面，该散热凹槽具有多个内侧壁；以及
该机壳还包含一导热片，该导热片覆盖该盖板的该外表面。
8.根据权利要求7所述的固态储存装置，其特征在于，该半导体封装单元的所述多个侧面分别直接接触该散热凹槽的所述多个内侧壁，且该导热片直接接触该半导体封装单元的该顶面。
9.根据权利要求8所述的固态储存装置，其特征在于，还包含：
一导热介质，具可挠性，位于该散热凹槽内，介于该半导体封装单元与该导热片之间。
10.根据权利要求9所述的固态储存装置，其特征在于，该导热介质直接接触该半导体封装单元的该顶面与该导热片，该半导体封装单元的所述多个侧面分别直接接触该散热凹槽的所述多个内侧壁。
11.根据权利要求9所述的固态储存装置，其特征在于，该导热介质还介于该半导体封装单元与该盖板之间，该导热介质的一部分直接接触该半导体封装单元的该顶面与该导热片，该导热介质的另一部分分别直接接触该半导体封装单元的所述多个侧面与该散热凹槽的所述多个内侧壁。
12.根据权利要求1所述的固态储存装置，其特征在于，该半导体封装单元至少部分地位于该散热凹槽内。
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