CN110048026A

CN110048026A - Oled panel manufacturing system, the device for being used to form interim pairing unit

Info

Publication number: CN110048026A
Application number: CN201810045316.0A
Authority: CN
Inventors: 孔杰; 居宇涵
Original assignee: Shanghai Vision Mdt Infotech Ltd
Current assignee: Hefei Shiya Technology Co ltd
Priority date: 2018-01-17
Filing date: 2018-01-17
Publication date: 2019-07-23
Anticipated expiration: 2038-01-17
Also published as: CN110048026B

Abstract

A kind of oled panel manufacturing system, the device for being used to form interim pairing unit, wherein oled panel manufacturing system includes several cluster operation chambers, several transfer chambers, several processing chambers, several interim bonding chambers, several solutions are bonded chamber, wherein each cluster operation chamber is connect at least one processing chamber；Adjacent cluster operation chamber is connected by transfer chamber；Each transfer chamber is temporarily bonded chamber and at least one solution bonding chamber connection at least one.It is to separate that oled panel manufacturing system of the invention, which is temporarily bonded chamber with processing chamber, improve the technique Adapter Property of oled panel manufacturing system, interim bonding chamber realizes being bonded for vapor deposition shadow mask and substrate by UV glue, to meet the para-linkage demand of the vapor deposition shadow mask and substrate of different materials.

Description

Oled panel manufacturing system, the device for being used to form interim pairing unit

Technical field

The present invention relates to OLED production field, in particular to a kind of oled panel manufacturing system is used to form interim pairing The device of unit.

Background technique

Organic electroluminescent LED (Organic Light-Emitting Diode, OLED) display panel is provided simultaneously with Self-luminous (being not required to backlight), contrast is high, thickness is thin, visual angle is wide, reaction speed is fast, can be used for flexibility panel, using temperature The advantages that spending wide range and construction and simpler processing procedure, is increasingly favored by industry.

The initial color schemes of OLED display panel are the display units of production display white light, then again with the use of corresponding Colored filter.This this technical solution of technical solution needs to introduce colored filter, due to blocking for colored filter So that about 80% display sub-pixel goes out light loss in colored filter, so that the luminous power consumption of OLED display panel and brightness Performance is gradually unable to satisfy the demand to the wearable application of micro display.In addition, can not individually modulate difference in this technical solution The microcavity chamber of three sub-pixel of wavelength RGB is long, and the alternative of colored filter becomes smaller, therefore, corresponding OLED display surface Visual angle colour cast, sound state contrast and colour gamut range of plate etc. show that main performance all has and decline by a relatively large margin.

For this purpose, industry proposes the technical solution for directly forming three primary colors sub-pixel.This technical solution is not due to needing coloured silk Colo(u)r filter, therefore, the light loss out of each sub-pixel is small, and the luminous power consumption and brightness characteristics of OLED display panel are superior.And And this OLED display panel can individually modulate the microcavity of three sub-pixel of different wave length RGB, therefore, corresponding OLED is aobvious Show that big visual angle colour cast, sound state contrast, colour gamut range of panel etc. shows that main performance is superior.

Directly formed three primary colors sub-pixel technical solution in OLED display panel production process, most important process it First is that organic layer (luminescent material) is formed the knot such as each luminescence display unit according on the requirement vapor deposition to substrate of driving matrix Structure.During this, need using to metal shadow mask (or exposure mask) and evaporation source, existing metal shadow mask is using invar alloy system Make, when being deposited, after metal shadow mask and substrate are aligned, then penetrates substrate, the magnetic that magnetic sheet generates using magnetic sheet Power adsorbs metal shadow mask on the surface of the substrate, then carries out vapor deposition process.

The mode of magnetic-adsorption set the contraposition of metal shadow mask and substrate and vapor deposition process can only in oled panel production The standby same chamber carries out, i.e., (alignment system is used for shadow mask and base the alignment system of existing oled panel making apparatus Plate is aligned) and deposition system (deposition system be used for after contraposition, using metal shadow mask as exposure mask, formed on substrate organic Luminous material layer) be integrated in a processing chamber, thus the technique Adapter Property of existing oled panel making apparatus is very Difference, and existing oled panel making apparatus can not carry out oled panel production using the shadow mask of nonmetallic materials production.

Summary of the invention

Problems solved by the invention is how to improve the technique Adapter Property of oled panel making apparatus, and realize using non- The shadow mask of metal material production carries out oled panel production.

To solve the above problems, the present invention provides a kind of oled panel manufacturing system characterized by comprising several clusters Operation chamber, several transfer chambers, several processing chambers, several interim bonding chambers, several solutions are bonded chamber, wherein Each cluster operation chamber is connect at least one processing chamber；Adjacent cluster operation chamber is connected by transfer chamber；Each Transfer chamber is temporarily bonded chamber and at least one solution bonding chamber connection at least one；The interim bonding chamber is at least used Shadow mask is deposited in storage, and after vapor deposition shadow mask is aligned with the substrate for transmitting into the chamber, substrate and vapor deposition shadow mask are led to It crosses UV glue to be bonded together, forms interim pairing structure；The transfer chamber is at least used to exist substrate or interim pairing structure It is transmitted between cluster operation chamber, interim bonding chamber reconciliation bonding chamber；The cluster operation chamber is at least used for will be interim Pairing structure is transmitted between processing chamber, and is transmitted between processing chamber and transfer chamber； The processing chamber is at least used for when interim pairing structure is sent among processing chamber, with interim pairing structure On vapor deposition shadow mask be exposure mask, by be vaporized on vapor deposition shadow mask exposure substrate surface formed organic material layer；The solution bonding After chamber is at least used on the substrate of interim pairing structure form organic material layer, when being transmitted to solution bonding chamber, by swashing Light irradiation is by substrate and vapor deposition shadow mask solution bonding, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask.

Optionally, the interim bonding chamber includes: bit cell, the first clamping unit, dispensing unit, UV light irradiation list Member and storage unit, wherein the bit cell is used to align by substrate and for shadow mask；First clamping unit is used In clamping substrate and vapor deposition shadow mask, and after substrate and vapor deposition shadow mask are aligned, so that substrate and vapor deposition shadow mask contact fitting； The dispensing unit is used for after substrate and vapor deposition shadow mask contact fitting, is shootd out UV glue, is filled between substrate and vapor deposition shadow mask UV glue；The UV light irradiation unit is irradiated filling UV glue between substrate and vapor deposition shadow mask, for emitting UV light so that UV Adhesive curing is bonded together substrate and vapor deposition shadow mask to form interim pairing structure；The storage unit is shady for storing vapor deposition Cover.

Optionally, the substrate includes pixel region and the cofferdam region around pixel region, cofferdam region part Surface forms cofferdam structure；The vapor deposition shadow mask includes: substrate；Grid film layer in the substrate face, the grid With the opening of several array arrangements in film layer；Run through the groove of substrate thickness in the substrate, the groove exposes Several openings in grid film layer and the grid film layer between adjacent apertures.

Optionally, first clamping unit makes the surface contact fitting of the vapor deposition shadow mask of the cofferdam structure on substrate.

Optionally, substrate of the dispensing unit on the outside of cofferdam structure and filling UV glue between vapor deposition shadow mask.

Optionally, the UV glue that the dispensing unit shoots out is that glue connection reaction occurs in the irradiation of UV light, so that substrate and steaming Plating shadow mask is bonded, and in laser irradiation, and fuse glue connection molecule, so that substrate and vapor deposition shadow mask carry out the UV of solution bonding Glue.

Optionally, the wavelength of the UV light of the UV light irradiation unit transmitting is more than or equal to 365nm, and irradiation energy is greater than 1000mj/cm²。

Optionally, the dispensing unit fills UV glue between substrate and vapor deposition shadow mask, and first clamping unit may be used also So that substrate and the vapor deposition shadow mask rotation of contact fitting.

Optionally, the solution bonding chamber includes laser beam irradiation unit and the second clamping unit, the laser beam irradiation unit For emitting laser, the cured UV glue in interim pairing structure is irradiated, second clamping unit is for clamping interim pairing Structure, and after the cured UV glue of laser irradiation, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask.

Optionally, the laser is picosecond laser, pulse frequency 100-1000KHz.

Optionally, processing chamber >=1 being connect with each cluster operation chamber.

Optionally, it when processing chamber >=2 being connect with each cluster operation chamber, is connect with each cluster operation chamber Processing chamber several processing chambers be identical processing chamber or different processing chambers, or At least partly quantity is identical processing chamber, and other parts quantity is other processing chambers.

Optionally, the processing chamber of different cluster operation chamber connections is identical processing chamber or different works At least part is identical process chamber in skill processing chamber housing, or the processing chamber of different cluster operation chamber connections Room.

Optionally, when certain cluster operation chamber is target cluster operation chamber, connect with the target cluster operation chamber front end The transfer chamber connect is front end transfer chamber, and the transfer chamber connecting with the target cluster operation chamber rear end is rear end transmission cavity Room, the substrate and vapor deposition shadow mask are forming interim pairing knot with interim be bonded in chamber that the front end transfer chamber connects Structure, and interim pairing structure is transmitted to by the target cluster operation chamber by the front end transfer chamber；The target cluster behaviour Make chamber and interim pairing structure is transmitted to corresponding processing chamber；In processing chamber, it is formed on substrate Machine material layer；Rear end transfer chamber by the interim bonding units for being formed with organic material layer from target cluster operation chamber be transmitted to The solution of rear end transfer chamber connection is bonded chamber, in solution bonding chamber, so that being formed with the substrate and vapor deposition of organic material layer Shadow mask separation.

Optionally, when several processing chambers being connected with target cluster operation chamber are identical processing chamber When, several interim pairing structures are being sequentially formed with interim be bonded in chamber that the front end transfer chamber connects, are being faced several If when pairing structure be sequentially transmitted by front end transfer chamber and target cluster operation chamber and to be connected with target cluster operation chamber In dry processing chamber, organic material layer is formed accordingly in the substrate surface of several interim pairing structures.

Optionally, when several processing chambers being connected from target cluster operation chamber are two different process chambers When room, interim pairing structure is formed in interim be bonded in chamber connected with the front end transfer chamber, is first temporarily matched described Structure is transmitted at a technique being connected with target cluster operation chamber by front end transfer chamber and target cluster operation chamber It manages in chamber, shadow mask is deposited as exposure mask, forms the first organic material layer in the substrate surface of the interim pairing structure, then The interim pairing structure for being formed with the first organic material layer is transmitted to and target cluster operation chamber by target cluster operation chamber In connected another processing chamber, using identical vapor deposition shadow mask as exposure mask, in the first organic material layer shape of substrate At the second organic material layer.

Optionally, the cluster operation chamber includes the first successively adjacent cluster operation chamber, the second cluster operation chamber, third Cluster operation chamber, the 4th cluster operation chamber, the 5th cluster operation chamber, the 6th cluster operation chamber, the transfer chamber include first Transfer chamber, the second transfer chamber, third transfer chamber, the 4th transfer chamber, the 5th transfer chamber, the 6th transfer chamber, Seven transfer chambers, the first transfer chamber are connect with the first cluster operation chamber, and the second transfer chamber is by the first cluster operation chamber and The connection of two cluster operation chambers, third transfer chamber connect the second cluster operation chamber with third cluster operation chamber, the 4th transmission cavity Room connects third cluster operation chamber with the 4th cluster operation chamber, and the 5th transfer chamber grasps the 4th cluster operation chamber and the 5th cluster Make chamber connection, the 6th transfer chamber connects the 5th cluster operation chamber with the 6th cluster operation chamber, the 7th transfer chamber and the The connection of six cluster operation chambers；Each transfer chamber between adjacent cluster operation chamber is temporarily bonded chamber and at least at least one One solution bonding chamber connection；Each cluster operation chamber is connect at least one processing chamber.

Optionally, the processing chamber connecting with the first cluster operation chamber includes at least one p-type doping hole transport Layer chamber and at least one public hole transmission layer chamber, the processing chamber connecting with the second cluster operation chamber include at least One blue light microcavity adjustment layer chamber and at least one blue light organic luminescent material layer chamber, connect with third cluster operation chamber Processing chamber includes at least one green light microcavity adjustment layer chamber and at least one green organic luminescence layer chamber, with The processing chamber of 4th cluster operation chamber connection includes at least one feux rouges microcavity adjustment layer chamber and at least one feux rouges Organic light emitting material chamber, the processing chamber connecting with the 5th cluster operation chamber include at least one electron transfer layer chamber Room and at least one cathode layer chamber, the processing chamber connecting with the 6th cluster operation chamber includes at least one coating chamber Room.

Optionally, the substrate is transmitted into what the first transfer chamber connected by the first transfer chamber and interim is bonded chamber In, this, which is temporarily bonded in chamber, is stored with the first vapor deposition shadow mask, and in the interim bonding chamber, the substrate and the first vapor deposition are shady Cover bonds together to form the first interim pairing unit；Then, first is temporarily matched by the first transfer chamber and the first cluster operation chamber Unit is sent in p-type doping hole transmission layer chamber, p-type is formed in substrate surface by evaporation process and adulterates hole transport Layer；Then, the first interim bonding units are sent to from p-type doping hole transmission layer chamber by the first cluster operation chamber public Hole transmission layer chamber adulterates hole transport layer surface in p-type by evaporation process and is formed with public hole transmission layer；Then, The be formed with public hole transmission layer first interim pairing unit is transmitted by the first cluster operation chamber and the second transfer chamber It is bonded chamber to the solution of the second transfer chamber connection, carries out solution bonding, by the first vapor deposition shadow mask and is formed with public hole biography The substrate of defeated layer separates；Then, the substrate for being formed with public hole transmission layer is sent to and the second transmission by the second transfer chamber The interim bonding chamber of chamber connection, this, which is temporarily bonded in chamber, is stored with the second vapor deposition shadow mask, in the interim bonding chamber, The substrate for being formed with public hole transmission layer and the second vapor deposition shadow mask are bonded together to form into the second interim pairing unit；Then, pass through Second interim pairing unit is sent in blue light microcavity adjustment layer chamber by the second transfer chamber and the second cluster operation chamber, is passed through The part of the surface of public hole transmission layer of the evaporation process on substrate forms blue light microcavity adjustment layer；Then, pass through the second cluster Second interim bonding units are sent to blue light organic luminescent material layer chamber from blue light microcavity adjustment layer chamber by operation chamber, are led to It crosses evaporation process and forms blue light organic luminescent material layer in blue light microcavity adjustment layer surface；Then, pass through the second cluster operation chamber The be formed with blue light organic luminescent material layer second interim pairing unit is sent to and third transmission cavity with third transfer chamber The solution of room connection is bonded chamber, carries out solution bonding, and shadow mask is deposited by second and is formed with the substrate of blue light organic luminescent material layer Separation；Then, the substrate for forming blue light organic luminescent material layer is sent to and connect with third transfer chamber by third transfer chamber Interim bonding chamber, this be temporarily bonded in chamber be stored with third vapor deposition shadow mask will be formed in the interim bonding chamber Substrate and third the vapor deposition shadow mask of blue light organic luminescent material layer bond together to form the interim pairing unit of third；Then, pass through third The interim pairing unit of third is sent in green light microcavity adjustment layer chamber by transfer chamber and third cluster operation chamber, passes through vapor deposition The part of the surface of the public hole transmission layer of blue light organic luminescent material layer side of the technique on substrate forms green light microcavity tune Flood；Then, the interim bonding units of third are sent to from green light microcavity adjustment layer chamber by green light by third cluster operation chamber Organic light emitting material chamber adjusts layer surface in green light microcavity by evaporation process and forms green organic luminescence layer；It connects , the third for being formed with green organic luminescence layer is temporarily matched by list by third cluster operation chamber and the 4th transfer chamber Member, which is sent to, is bonded chamber with the solution of the 4th transfer chamber connection, carries out solution bonding, by third vapor deposition shadow mask and is formed with green light The substrate of organic light emitting material separates；Then, the 4th transfer chamber transmits the substrate for forming green organic luminescence layer It is bonded chamber to the interim of the 4th transfer chamber connection, this, which temporarily be bonded in chamber, is stored with the 4th shadow mask is deposited, and faces at this In Shi Jianhe chamber, the substrate for being formed with green organic luminescence layer is bonded together to form the 4th with the 4th vapor deposition shadow mask and is temporarily matched To unit；Then, the 4th interim pairing unit is sent to by feux rouges microcavity by the 4th transfer chamber and the 4th cluster operation chamber In adjustment layer chamber, pass through the portion of the public hole transmission layer of green organic luminescence layer side of the evaporation process on substrate Surface is divided to form feux rouges microcavity adjustment layer；Then, by the 4th cluster operation chamber by the 4th interim bonding units from feux rouges microcavity Adjustment layer chamber is sent to red-light organic luminous material layer chamber, by evaporation process feux rouges microcavity adjust layer surface formed it is red Light organic light emitting material；Then, feux rouges organic light emission material will be formed with by the 4th cluster operation chamber and the 5th transfer chamber 4th interim pairing unit of the bed of material, which is sent to, is bonded chamber with the solution of the 5th transfer chamber connection, solution bonding is carried out, by the 4th Vapor deposition shadow mask is separated with the substrate for being formed with red-light organic luminous material layer；Then, it is organic will to form feux rouges for the 5th transfer chamber The substrate of luminous material layer, which is sent to, is bonded chamber with the interim of the 5th transfer chamber connection, this is temporarily bonded in chamber and is stored with 5th vapor deposition shadow mask, it is in the interim bonding chamber, the substrate and the 5th vapor deposition that are formed with red-light organic luminous material layer is shady Cover bonds together to form the 5th interim pairing unit；Then, the 5th is temporarily matched by the 5th transfer chamber and the 5th cluster operation chamber Unit is sent in electron transfer layer chamber, formed on substrate by evaporation process covering blue light organic luminescent material layer, The electron transfer layer of green organic luminescence layer and red-light organic luminous material layer surface；Then, pass through the 5th cluster operating cavity 5th interim bonding units are sent to cathode layer chamber from electron transfer layer chamber by room, by evaporation process in electron transfer layer Surface forms cathode layer；Then, the form cathode layer the 5th is temporarily matched by the 5th cluster operation chamber and the 6th transfer chamber Unit is sent to and is bonded chamber with the solution of the 6th transfer chamber connection, carries out solution bonding, by the 5th vapor deposition shadow mask and is formed with The substrate of cathode layer separates；Then, the substrate for forming cathode layer is sent to by the 6th transfer chamber connect with the 6th transfer chamber Interim bonding chamber, this be temporarily bonded in chamber be stored with the 6th vapor deposition shadow mask will be formed in the interim bonding chamber The substrate of cathode layer and the 6th vapor deposition shadow mask bond together to form the 6th interim pairing unit；Then, pass through the 6th transfer chamber and 6th interim pairing unit is sent in coating chamber by six cluster operation chambers, passes through cathode layer of the evaporation process on substrate Surface forms coating.

Optionally, the processing chamber connecting with the first cluster operation chamber includes at least one p-type doping hole transport Layer chamber and at least one public hole transmission layer chamber, the processing chamber connecting with the second cluster operation chamber include at least One public hole transmission layer chamber and at least one blue light organic luminescent material layer chamber, connect with third cluster operation chamber Processing chamber includes at least one green light microcavity adjustment layer chamber and at least one green organic luminescence layer chamber, with The processing chamber of 4th cluster operation chamber connection includes at least one feux rouges microcavity adjustment layer chamber and at least one feux rouges Organic light emitting material chamber, the processing chamber connecting with the 5th cluster operation chamber include at least one electron transfer layer chamber Room and at least one cathode layer chamber, the processing chamber connecting with the 6th cluster operation chamber includes at least one coating chamber Room.

Optionally, the substrate is transmitted into what the first transfer chamber connected by the first transfer chamber and interim is bonded chamber In, this, which is temporarily bonded in chamber, is stored with the first vapor deposition shadow mask, and in the interim bonding chamber, the substrate and the first vapor deposition are shady Cover bonds together to form the first interim pairing unit；Then, first is temporarily matched by the first transfer chamber and the first cluster operation chamber Unit is sent in p-type doping hole transmission layer chamber, p-type is formed in substrate surface by evaporation process and adulterates hole transport Layer；Then, the first interim bonding units hole transmission layer chamber is adulterated from p-type by the first cluster operation chamber to be sent to and the The public hole transmission layer chamber of cluster operation chamber connection adulterates hole transport layer surface in p-type by evaporation process and is formed The public hole transmission layer of first layer；Then, by the first cluster operation chamber, the second transfer chamber and the second cluster operation chamber by shape At there is the first interim pairing unit of the public hole transmission layer of first layer to be sent to the public sky connecting with the second cluster operation chamber Cave transport layer chamber forms the public hole transmission layer of the second layer in the public hole transport layer surface of first layer by evaporation process, The public hole transmission layer of first layer and the public hole transmission layer of the second layer constitute hole transmission layer；Then, it is operated by the second cluster Chamber and the second transfer chamber will be formed with the interim pairing structure transmission of the public hole transmission layer of the second layer as the second transmission The solution of unit connection is bonded chamber, carries out solution bonding, by the first vapor deposition shadow mask and is formed with the public hole transmission layer of the second layer Substrate separation；Then, the substrate for being formed with the public hole transmission layer of the second layer is sent to and the second transmission by the second transfer chamber The interim bonding chamber of chamber connection, this, which is temporarily bonded in chamber, is stored with the second vapor deposition shadow mask, in the interim bonding chamber, The substrate for being formed with the public hole transmission layer of the second layer and the second vapor deposition shadow mask are bonded together to form into the second interim pairing unit；It connects , the second interim pairing unit is sent to by blue light organic luminescent material layer by the second transfer chamber and the second cluster operation chamber Chamber, the part of the surface by evaporation process in the public hole transmission layer of the second layer form blue light organic luminescent material layer；Then, The second interim pairing unit that blue light organic luminescent material layer will be formed with by the second cluster operation chamber and third transfer chamber It is sent to and is bonded chamber with the solution of third transfer chamber connection, carry out solution bonding, shadow mask, which is deposited, and is formed with blue light by second has The substrate of machine luminous material layer separates；Then, the substrate for forming blue light organic luminescent material layer is sent to by third transfer chamber Interim with the connection of third transfer chamber is bonded chamber, this, which is temporarily bonded in chamber, is stored with third vapor deposition shadow mask, interim at this It is bonded in chamber, the substrate for being formed with blue light organic luminescent material layer is bonded together to form into third with third vapor deposition shadow mask and is temporarily matched Unit；Then, the interim pairing unit of third is sent to by green light microcavity tune by third transfer chamber and third cluster operation chamber In flood chamber, passed by the public hole of the portion of second layer of blue light organic luminescent material layer side of the evaporation process on substrate Defeated layer surface forms green light microcavity adjustment layer；Then, by third cluster operation chamber that the interim bonding units of third are micro- from green light Intonation flood chamber is sent to green organic luminescence layer chamber, adjusts layer surface in green light microcavity by evaporation process and is formed Green organic luminescence layer；Then, green light organic light emission will be formed with by third cluster operation chamber and the 4th transfer chamber The interim pairing unit of the third of material layer, which is sent to, is bonded chamber with the solution of the 4th transfer chamber connection, solution bonding is carried out, by the Three vapor deposition shadow masks are separated with the substrate for being formed with green organic luminescence layer；Then, the 4th transfer chamber has green light is formed The substrate of machine luminous material layer, which is sent to, is bonded chamber with the interim of the 4th transfer chamber connection, this is temporarily bonded in chamber and stores There is the 4th vapor deposition shadow mask, in the interim bonding chamber, the substrate and the 4th vapor deposition of green organic luminescence layer will be formed with Shadow mask bonds together to form the 4th interim pairing unit；Then, interim by the 4th by the 4th transfer chamber and the 4th cluster operation chamber Pairing unit is sent in feux rouges microcavity adjustment layer chamber, passes through green organic luminescence layer one of the evaporation process on substrate The public hole transport layer surface of the portion of second layer of side forms feux rouges microcavity adjustment layer；It then, will by the 4th cluster operation chamber 4th interim bonding units are sent to red-light organic luminous material layer chamber from feux rouges microcavity adjustment layer chamber, pass through evaporation process Red-light organic luminous material layer is formed in feux rouges microcavity adjustment layer surface；Then, it is transmitted by the 4th cluster operation chamber and the 5th The 4th interim pairing unit for being formed with red-light organic luminous material layer is sent to the solution connecting with the 5th transfer chamber by chamber It is bonded chamber, carries out solution bonding, the 4th vapor deposition shadow mask is separated with the substrate for being formed with red-light organic luminous material layer；Then, The substrate for forming red-light organic luminous material layer is sent to and interim being bonded of the 5th transfer chamber connection by the 5th transfer chamber Chamber, this be temporarily bonded in chamber be stored with the 5th vapor deposition shadow mask will be formed with the organic hair of feux rouges in the interim bonding chamber The substrate of optical material layer and the 5th vapor deposition shadow mask bond together to form the 5th interim pairing unit；Then, by the 5th transfer chamber and 5th interim pairing unit is sent in electron transfer layer chamber by the 5th cluster operation chamber, by evaporation process on substrate shape At the electron-transport of covering blue light organic luminescent material layer, green organic luminescence layer and red-light organic luminous material layer surface Layer；Then, the 5th interim bonding units are sent to from electron transfer layer chamber by cathode layer chamber by the 5th cluster operation chamber, Cathode layer is formed in electron-transport layer surface by evaporation process；Then, pass through the 5th cluster operation chamber and the 6th transfer chamber The 5th interim pairing unit for forming cathode layer is sent to and is bonded chamber with the solution of the 6th transfer chamber connection, carries out solution key It closes, the 5th vapor deposition shadow mask is separated with the substrate for being formed with cathode layer；Then, the 6th transfer chamber will form the substrate of cathode layer It being sent to and is bonded chamber with the interim of the 6th transfer chamber connection, this, which is temporarily bonded in chamber, is stored with the 6th vapor deposition shadow mask, In the interim bonding chamber, the substrate for being formed with cathode layer and the 6th vapor deposition shadow mask are bonded together to form into the 6th interim pairing unit； Then, the 6th interim pairing unit is sent in coating chamber by the 6th transfer chamber and the 6th cluster operation chamber, is led to It crosses cathode layer surface of the evaporation process on substrate and forms coating.

Optionally, the aligning accuracy of several interim bonding chambers is consistent.

The present invention also provides a kind of oled panel manufacturing systems, comprising: a cluster operation chamber, several transfer chambers, Several processing chambers, several interim bonding chambers, several solutions are bonded chamber, wherein the cluster operation chamber and at least one A processing chamber connection；The leading portion of the cluster operation chamber and rear end are at least connected with a transfer chamber respectively；It is grasped with cluster The transfer chamber for making the connection of chamber front end is temporarily bonded chamber connection, the transmission connecting with cluster operation chamber rear end at least one Chamber is bonded chamber connection at least one solution；The interim bonding chamber is at least used to store vapor deposition shadow mask, and shady in vapor deposition It covers and after the substrate that transmits into the chamber aligned, substrate and vapor deposition shadow mask is bonded together by UV glue, formed temporarily Pairing structure；The transfer chamber be at least used for by substrate or interim pairing structure cluster operation chamber, interim bonding chamber and It is transmitted between solution bonding chamber；The cluster operation chamber is at least used for interim pairing structure between processing chamber It is transmitted, and is transmitted between processing chamber and transfer chamber；The processing chamber is at least used for When interim pairing structure is sent among processing chamber, using the vapor deposition shadow mask on interim pairing structure as exposure mask, pass through steaming The substrate surface for being plated in vapor deposition shadow mask exposure forms organic material layer；The solution bonding chamber is at least used in interim pairing structure Substrate on formed organic material layer after, be transmitted to solution bonding chamber when, by laser irradiation by substrate and vapor deposition shadow mask solution key It closes, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask.

Optionally, processing chamber is several, and several processing chambers are identical processing chamber, cluster operation Chamber front-end and back-end are separately connected a transfer chamber, and the transfer chamber of front end is at least connected with an interim bonding chamber, after The transfer chamber at end is at least connected with a solution bonding chamber.

Optionally, processing chamber is several, and several processing chambers are identical processing chamber, front end Transfer chamber connects at least one solution bonding chamber, the biography of the rear end other than being at least connected with an interim bonding chamber It send chamber other than being at least connected with a solution bonding chamber, and connects at least one interim bonding chamber.

Optionally, processing chamber is several, and several processing chambers include at least at different two kinds of technique Chamber is managed, the transfer chamber of front end is at least connected with an interim bonding chamber, and the transfer chamber of rear end is at least connected with a solution key Close chamber.

Optionally, several processing chambers include different two kinds of processing chambers, the transmission cavity of front end Room connects at least one solution bonding chamber, the transfer chamber of the rear end other than being at least connected with an interim bonding chamber Other than being at least connected with a solution bonding chamber, and connect at least one interim bonding chamber.

The present invention also provides a kind of devices for being used to form interim pairing unit, comprising: it is temporarily bonded chamber, it is described Interim bonding chamber is at least used to store vapor deposition shadow mask, and after vapor deposition shadow mask is aligned with the substrate for transmitting into the chamber, Substrate and vapor deposition shadow mask are bonded together by UV glue, form interim pairing structure.

Compared with prior art, technical solution of the present invention has the advantage that

Oled panel manufacturing system of the invention, comprising: several cluster operation chambers, several transfer chambers, at several techniques Chamber, several interim bonding chambers are managed, several solutions are bonded chamber, and each cluster operation chamber and at least one processing chamber connect It connects；Adjacent cluster operation chamber is connected by transfer chamber；Each transfer chamber is temporarily bonded chamber and at least one at least one A solution bonding chamber connection, interim bonding chamber of the invention are separated with processing chamber, and the interim chamber that is bonded is steaming After plating shadow mask is aligned with the substrate for transmitting into the chamber, substrate and vapor deposition shadow mask are bonded together by UV glue, formation Interim pairing structure, so that substrate and vapor deposition shadow mask can realize the bonding of the two, and the interim pairing formed without magnetic force Unit has very high fastness by the bonding of UV glue, can very easily be realized temporarily by transfer chamber and cluster operation chamber The transmission of pairing unit, processing chamber is when interim pairing structure is sent among processing chamber, temporarily to match Vapor deposition shadow mask in structure is exposure mask, and the substrate surface by being vaporized on vapor deposition shadow mask exposure forms organic material layer, thus this The oled panel manufacturing system of application make that shadow mask and the para-linkage process of substrate is deposited to be completed outside processing chamber, So that the contraposition process and evaporation process process of vapor deposition shadow mask and substrate are carried out separately, so that processing chamber forms Kind organic material layer not will receive the limitation of the para-linkage process of vapor deposition shadow mask and substrate, so that oled panel production system The processing chamber that a certain organic material layer is formed in system can be easy to transform the technique to form another organic material layer as Processing chamber housing improves the technique Adapter Property of oled panel manufacturing system, and the side that temporarily bonding chamber is bonded by UV glue The para-linkage of the vapor deposition shadow mask and substrate of nonmetallic materials had both may be implemented in formula, can also realize the vapor deposition shadow mask of metal material With the para-linkage of substrate, and solve bonding chamber by laser irradiation can very easily realize vapor deposition shadow mask and substrate point From to meet the para-linkage demand of the vapor deposition shadow mask and substrate of different materials.

Further, the interim bonding chamber includes: bit cell, the first clamping unit, dispensing unit and the irradiation of UV light Unit, wherein the bit cell is used to align by substrate and for shadow mask；First clamping unit is for clamping base Plate and vapor deposition shadow mask, and after substrate and vapor deposition shadow mask are aligned, so that substrate and vapor deposition shadow mask contact fitting；The dispensing Unit is used for after substrate and vapor deposition shadow mask contact fitting, is shootd out UV glue, is filled UV glue between substrate and vapor deposition shadow mask；It is described UV light irradiation unit is irradiated filling UV glue between substrate and vapor deposition shadow mask for emitting UV light, so that UV adhesive curing, it will Substrate and vapor deposition shadow mask are bonded together to form interim pairing structure；The storage unit is led to for storing vapor deposition shadow mask Substrate can very easily be realized and the para-linkage of shadow mask is deposited to form interim pairing unit by crossing interim bonding chamber.

Further, the UV glue is the generation glue connection reaction in the irradiation of UV light, so that substrate is bonded with vapor deposition shadow mask, And in laser irradiation, fuse glue connection molecule so that substrate and vapor deposition shadow mask carry out solution bonding UV glue, thus can be convenient and It efficiently realizes substrate and the interim bonding reconciliation bonding steps of shadow mask is deposited.

Further, the wavelength of the UV light is more than or equal to 365nm, can be greater than with 365nm, 395nm, irradiation energy 1000mj/cm²The wave band energy of (millijoule is every square centimeter), the UV light is lower, excites to the chemical potential energy of luminous organic material It is smaller, the service life of OLED device will not be reduced, while relatively reliable UV bonding performance can be obtained again.

Further, the laser of laser beam irradiation unit transmitting is picosecond laser, pulse frequency 100-1000KHz, so that solidification UV glue in corsslinking molecular can fuse faster, and UV glue is made still to be able to maintain cured state, and can guarantee substrate with Separation of the shadow mask without the lateral changing of the relative positions is deposited.

Further, each cluster operation chamber connects several identical processing chambers, and different cluster operation chamber connections Processing chamber be different processing chambers, using some cluster operation chamber as cluster operation chamber, with target cluster The connected several processing chambers of operation chamber are identical processing chamber, are connected with the target cluster operation chamber front end The transfer chamber connect is front end transfer chamber, and the transfer chamber connecting with the target cluster operation chamber rear end is rear end transmission cavity When room, several interim pairing structures are being sequentially formed with interim be bonded in chamber that the front end transfer chamber connects, it will be several Interim pairing structure is sequentially transmitted by front end transfer chamber and target cluster operation chamber to be connected with target cluster operation chamber In several processing chambers, organic material layer, rear end transmission are formed accordingly in the substrate surface of several interim pairing structures The interim bonding units for being formed with organic material layer are transmitted to from target cluster operation chamber and connect with rear end transfer chamber by chamber Solution be bonded chamber, in solution bonding chamber, separated so that being formed with the substrate of organic material layer and shadow mask being deposited, thus substrate It can be with continuous-flow type by different interim bonding chambers, cluster operation chamber, process chamber in oled panel manufacturing system Room reconciliation bonding chamber repeats abovementioned steps to form different organic light emitting materials, it is thus achieved that oled panel is successively criticized Amount production.

Further, when some cluster operation chamber is as cluster operation chamber, several works for being connected with target cluster operation chamber Skill processing chamber housing is different processing chamber, and the transfer chamber connecting with the target cluster operation chamber front end is front end biography Chamber is sent, when the transfer chamber connecting with the target cluster operation chamber rear end is rear end transfer chamber, is passed with the front end Interim pairing structure is formed in the interim bonding chamber for sending chamber to connect, the interim pairing structure is first passed through into front end transmission cavity Room and target cluster operation chamber are transmitted in a processing chamber being connected with target cluster operation chamber, are so that shadow mask is deposited Exposure mask forms the first organic material layer in the substrate surface of the interim pairing structure, then will be formed with the first organic material The interim pairing structure of layer is transmitted to another process chamber being connected with target cluster operation chamber by target cluster operation chamber In room, using identical vapor deposition shadow mask as exposure mask, the second organic material layer is formed in the first organic material layer of substrate；Then The interim bonding units for being formed with the second organic material layer are transmitted to and rear end by rear end transfer chamber from target cluster operation chamber The solution of transfer chamber connection is bonded chamber, in solution bonding chamber, so that being formed with the substrate and vapor deposition of the second organic material layer Shadow mask separation, thus when make oled panel realization to being formed at the continuous-flow type of at least two layers organic material layer on multiple substrates Reason, and while forming two layers of organic material layer, only need to once be aligned and bonding technology, and the time of technique is saved.

Further, at least part is identical process chamber in the processing chamber of different cluster operation chamber connections Room, thus the thicker organic material layer of thickness can split at least thickness is two layers identical, it is connected in different cluster operation chambers Processing chamber grows the organic material layer of respective thickness (such as at the technique being connected with certain cluster operation chamber accordingly Reason chamber grows the organic material layer of a part of thickness, then in the process chamber being connected with adjacent another cluster operation chamber Room grows the organic material layer of another part thickness) so that the growth time difference of the organic material layer of each processing chamber is smaller Or it is essentially identical, to reduce the growth of part organic material layer to the shadow of the technique pitch time of entire OLED manufacturing system It rings.

Detailed description of the invention

FIG. 1 to FIG. 6 is the structural schematic diagram of oled panel of embodiment of the present invention manufacturing system；

Fig. 7 is the structural schematic diagram that shadow mask is deposited in the embodiment of the present invention；

Fig. 8~Fig. 9 is the structural schematic diagram of substrate of the embodiment of the present invention；

Figure 10~Figure 15 is the section chambers of oled panel of embodiment of the present invention manufacturing system when making oled panel Structural schematic diagram；

Figure 16 is the structural schematic diagram of one embodiment of the invention oled panel；

Figure 17 is the structural schematic diagram that one embodiment of the invention oled panel manufacturing system makes oled panel；

Figure 18 is the structural schematic diagram of one embodiment of the invention oled panel；

Figure 19 is the structural schematic diagram that one embodiment of the invention oled panel manufacturing system makes oled panel.

Specific embodiment

As described in the background art, the technique Adapter Property of existing oled panel making apparatus is very poor, and existing OLED Panel making apparatus can not carry out oled panel production using the shadow mask of nonmetallic materials production.

The study found that alignment system and deposition system are integrated in a process cavity by existing oled panel making apparatus In room, and when oled panel makes, needs to form plurality of layers organic material layer (for example hole transmission layer, blue light, feux rouges, green light is micro- The long layer of intonation, blue light, feux rouges, green organic luminescence layer, electron transfer layer etc.), and when forming different organic materials layer pair The required precision of contraposition is different that (for example process window when forming hole transmission layer is larger, thus aligning accuracy is opposite wants Process window when asking lower, and forming blue light, feux rouges, green organic luminescence layer is smaller, thus aligning accuracy is opposite wants Ask higher), thus when being designed using existing oled panel making apparatus, the considerations of in the factors such as cost, for shape At different organic light emitting materials using different precision alignment system (such as formed blue light, feux rouges, green light organic light emission Material layer processing chamber integrates the higher alignment system of precision, and the integrated precision of the processing chamber for forming hole transmission layer is lower Alignment system), i.e., the alignment system of different accuracy is integrated in a processing chamber with corresponding deposition system, thus is made When oled panel, specific processing chamber can be only used to form specific organic light emitting material, it is difficult to by specific process cavity Room is used to form different organic material layers, and (processing chamber for being used to form hole transmission layer, which is difficult to transform as, is used to form indigo plant Light, feux rouges, green organic luminescence layer processing chamber), so that the technique Adapter Property of oled panel making apparatus is very poor.

Also, when the prior art uses metal shadow mask, magnetic sheet penetrates substrate, and the magnetic force that magnetic sheet generates adsorbs metal shadow mask On the surface of the substrate, and magnetic sheet is using electromagnet, generating magnetic force when being powered adsorbs metal shadow mask, and magnetic force disappears when powering off It loses, so that substrate is separated with metal shadow mask, such mode makes shady for metal in existing oled panel making apparatus The alignment system and deposition system of cover and substrate can only be integrated in a processing chamber, and only due to magnetic sheet suction type Can be only to the shadow mask of metal material, and for the shadow mask of nonmetallic materials, existing oled panel making apparatus can not achieve The contraposition of shadow mask and substrate.

In addition, technique pitch time is longer during making oled panel asks for existing oled panel making apparatus Topic.The study found that oled panel needed to form when making plurality of layers organic material layer (such as hole transmission layer, blue light, feux rouges, The long layer of green light microcavity tune, blue light, feux rouges, green organic luminescence layer, electron transfer layer etc.), thus use existing OLED When panel making apparatus makes oled panel, forming different organic layers every time is that will carry out in different processing chambers pair , it is aligned in each processing chamber repeatedly, so that the technique pitch time of the manufacturing process of entire oled panel is longer.

For this purpose, interim bonding chamber and processing chamber are point the present invention provides a kind of oled panel manufacturing system From, the interim chamber that is bonded leads to substrate and vapor deposition shadow mask after vapor deposition shadow mask is aligned with the substrate for transmitting into the chamber It crosses UV glue to be bonded together, forms interim pairing structure, so that substrate and vapor deposition shadow mask can realize the two without magnetic force Bonding, and the interim pairing unit formed has very high fastness by the bonding of UV glue, passes through transfer chamber and cluster operating cavity Room can very easily realize the transmission of interim pairing unit, and processing chamber is sent to process in interim pairing structure When among chamber, using the vapor deposition shadow mask on interim pairing structure as exposure mask, by the substrate surface for being vaporized on vapor deposition shadow mask exposure Organic material layer is formed, thus the oled panel manufacturing system of the application makes that shadow mask is deposited and the para-linkage process of substrate is It is completed outside processing chamber, so that the contraposition process and evaporation process process of vapor deposition shadow mask and substrate are carried out separately, It will receive the limitation that the para-linkage process of shadow mask and substrate is deposited so which kind of organic material layer processing chamber forms not, So that the processing chamber for forming a certain organic material layer in oled panel manufacturing system can be easy to transform shape as At the processing chamber of another organic material layer, the technique Adapter Property of oled panel manufacturing system, and ephemeral key are improved Close chamber both may be implemented the para-linkage of vapor deposition shadow mask and substrate of nonmetallic materials in such a way that UV glue is bonded, can be with Realize the para-linkage of the vapor deposition shadow mask and substrate of metal material, and solving bonding chamber can be very easily by laser irradiation The separation of vapor deposition shadow mask and substrate is realized, to meet the para-linkage demand of the vapor deposition shadow mask and substrate of different materials.

To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention Specific embodiment be described in detail.When describing the embodiments of the present invention, for purposes of illustration only, schematic diagram can disobey general proportion Make partial enlargement, and the schematic diagram is example, should not limit the scope of the invention herein.In addition, in reality It should include the three-dimensional space of length, width and depth in production.

FIG. 1 to FIG. 6 is the structural schematic diagram of oled panel of embodiment of the present invention manufacturing system；Fig. 7 is the embodiment of the present invention The structural schematic diagram of shadow mask is deposited；Fig. 8~Fig. 9 is the structural schematic diagram of substrate of the embodiment of the present invention；Figure 10~Figure 15 is this hair Structural schematic diagram of the section chambers of bright embodiment oled panel manufacturing system when making oled panel；Figure 16 is the present invention one The structural schematic diagram of embodiment oled panel；Figure 17 is that one embodiment of the invention oled panel manufacturing system makes oled panel Structural schematic diagram；Figure 18 is the structural schematic diagram of one embodiment of the invention oled panel；Figure 19 is one embodiment of the invention OLED The structural schematic diagram of panel manufacturing system production oled panel.

A kind of oled panel manufacturing system is provided in one embodiment of the invention, referring to FIG. 1, including: several cluster operations Chamber 200, several transfer chambers 220, several processing chambers 210, several interim bonding chambers 230, several solutions are bonded chamber Room 240, wherein

Each cluster operation chamber 200 is connect at least one processing chamber 210；

Adjacent cluster operation chamber 200 is connected by transfer chamber 220；

Each transfer chamber 220 is temporarily bonded chamber 230 at least one and at least one solution bonding chamber 240 connects；

The interim bonding chamber 230 is at least used to store vapor deposition shadow mask, and (is somebody's turn to do shadow mask is deposited and transmits into the chamber Interim bonding chamber) substrate aligned after, substrate and vapor deposition shadow mask are bonded together by UV glue, is formed and is temporarily matched Structure；

The transfer chamber 220 at least for by substrate or interim pairing structure in cluster operation chamber 200, be temporarily bonded chamber It is transmitted between the reconciliation of room 230 bonding chamber 240；

The cluster operation chamber 200 is at least used to for interim pairing structure being transmitted between processing chamber 210, And it is transmitted between processing chamber 210 and transfer chamber 220；

The processing chamber 210 is at least used for when interim pairing structure is sent among processing chamber, with Vapor deposition shadow mask on interim pairing structure is exposure mask, and the substrate surface by being vaporized on vapor deposition shadow mask exposure forms organic material Layer；

After the solution bonding chamber 240 is at least used on the substrate of interim pairing structure form organic material layer, transmission When being bonded chamber to solution, by laser irradiation by substrate and vapor deposition shadow mask solution bonding, so that being formed with the substrate of organic material layer It is separated with vapor deposition shadow mask.

The quantity of cluster operation chamber 200 is at least 2 or is more than or equal to 2 (these in the oled panel manufacturing system Be several in subsequent embodiment in embodiment it is to indicate that quantity is at least 2 or is more than or equal to 2), i.e. oled panel system The quantity for making cluster operation chamber 200 in system can be 2,3,4,5,6,7,8,9 or 10, this implementation Example in, in oled panel manufacturing system have 5 cluster operation chambers 200 as an example, each cluster operation chamber 200 with it is several Processing chamber 210 connects；Adjacent cluster operation chamber 200 is connected by transfer chamber 220.

Each cluster operation chamber 200 is connect at least one processing chamber 210 in the oled panel manufacturing system, I.e. each cluster operation chamber 200 can be connect with 1,2,3,4 or 5 processing chamber housing 210.Different cluster operation chambers The quantity of the processing chamber of 200 connections can be identical or not identical.In the present embodiment, with each cluster operation chamber 200 and 4 A processing chamber housing 210 is connected to example.

Adjacent cluster operation chamber 200 is connected by transfer chamber 220, is formed serial structure, as shown in fig. 1, is worked as cluster When operation chamber 200 is 5, two adjacent cluster operation chambers 200 are transmitted by one in 5 cluster operation chambers 200 Chamber 220 connects, and to form serial structure, and is located at two cluster operation chambers 200 at both ends (both ends of serial structure) It is also respectively connected with a transfer chamber 220, i.e. each cluster operation chamber needs are connect with two transfer chambers 220.

In the present embodiment, each transfer chamber 220 between adjacent cluster operation chamber is temporarily bonded chamber at least one 230 connect at least one solution bonding chamber 240.One connects at least one and faces in two transfer chambers 220 at both ends Shi Jianhe chamber 230 (only connects an interim bonding chamber 230 than that of front end or left end transfer chamber 220 as shown in figure 1), At least one solution of another transfer chamber 220 connection is bonded chamber 240, and (that of rear end or right end transfer chamber 220 only connects That transfer chamber 220 of one front end or left end only connects an interim bonding chamber 230).In other embodiments, both ends Two transfer chambers 220 can be connected to few one interim bonding chamber 230 and at least one solution bonding chamber 240.

The interim bonding chamber 220 includes: bit cell, the first clamping unit, dispensing unit and UV light irradiation unit, Wherein the bit cell is used to align by substrate and for shadow mask；First clamping unit is for clamping substrate and steaming Shadow mask is plated, and after substrate and vapor deposition shadow mask are aligned, so that substrate and vapor deposition shadow mask contact fitting；The dispensing unit is used In after substrate and vapor deposition shadow mask contact fitting, UV glue is shootd out, fills UV glue between substrate and vapor deposition shadow mask；The UV illumination Unit is penetrated for emitting UV light, filling UV glue between substrate and vapor deposition shadow mask is irradiated so that UV adhesive curing, by substrate and Vapor deposition shadow mask is bonded together to form interim pairing structure；The storage unit is for storing vapor deposition shadow mask.Below to substrate and Vapor deposition shadow mask is described in detail.

Referring to FIG. 7, Fig. 7 is the structural schematic diagram that shadow mask is deposited in one embodiment of the invention, the vapor deposition shadow mask includes institute Stating vapor deposition shadow mask includes: substrate 101；Grid film layer 102 on 101 front of substrate, if having in the grid film layer 102 The opening 108 of dry array arrangement；Run through the groove 111 of 101 thickness of substrate in substrate 101, the exposure of groove 111 is offscale Grid film layer between several openings in grid film layer 102 and adjacent apertures 108.

In one embodiment, the forming process of the vapor deposition shadow mask includes: to provide substrate 101, and the substrate 101 includes just Face and the opposite back side, as shown in fig. 7, lower surface is as the back side using the upper surface of substrate 101 as front；Form covering institute State the positive grid film layer 102 of substrate 101；Grid film layer 102 described in etched portions is formed in the grid film layer 102 Several openings 108 being arranged in array, and the opening 108 exposes 101 front face surface of substrate；It is carved along the back side of substrate 101 The part substrate 101 is lost, forms several openings 108 and the adjacent apertures exposed in grid film layer 102 in substrate 101 The groove 111 of grid film layer between 108.The vapor deposition shadow mask that this method is formed, the size of the opening formed in grid film layer 108 Can be smaller, and the sidewall profile being open is preferable.

The material of the substrate 101 is semiconductor material or glass, and the semiconductor material is silicon, germanium, silicon-on-insulator Or germanium on insulator.The glass is tempered glass.

The material of the grid film layer 102 is silicon nitride, silica or silicon oxynitride.

In one embodiment, the grid film layer 102 can only cover the front of substrate 101, in other embodiments, institute Front face surface of the grid film layer 102 in addition to covering substrate, the also side of covering substrate and backside surface are stated, the substrate 101 is just Several openings are formed in face grid film layer 102, mask layer when as vapor deposition, the grid film layer at 101 back side of substrate, as The etched substrate back side forms mask layer when groove, and the grid film layer of 101 side of substrate is protected at the back side of etched substrate The substrate of shield side will not be etched, the grid film layer for enabling the good support substrate front of remaining substrate material hanging, And the grid film layer of 101 side of substrate and the positive grid film layer of substrate 101 be it is integrated, it is subsequent to be formed in etched substrate Groove, when so that the positive grid film layer with several openings of substrate 101 is hanging, with several openings grid film layer with Between substrate 101 have good adhesiveness and mechanical stability, prevent the grid film layer with several openings deformation and The warpage or disengaging at edge, thus the opening in grid film layer is still able to maintain good pattern, is formed when advantageously ensuring that vapor deposition Luminescence unit position precision and good pattern.

In one embodiment, the grid film layer 102 has tensile stress, to prevent hanging grid film layer due to from heave hand The deformation come improves the position precision of grid film layer split shed and keeps the good of opening sidewalls pattern.

The material of the grid film layer 102 is silicon nitride, the grid film layer 102 with a thickness of 1~1.5 micron, grid The size of the tensile stress of film layer 102 is 100~400Mpa, and the surface roughness of grid film layer 102 guarantees subsequent less than 20 nanometers Hanging grid film layer mechanical stability and mechanical strength and corrosion resistance are higher simultaneously, effectively overcome grid film layer certainly Weight bring deformation, and the lesser opening of formation size that can be very easy in 1~1.5 micron of grid film layer, and prevent Only grid film layer is too thin generates damaged in subsequent technique processing, while stress is excessive when preventing thickness too thick be easy to cause substrate Warpage.

It can uniformly and with larger be answered by the very easy formation thickness of boiler tube low-pressure chemical vapor deposition process The grid film layer of power forms front, the back side and the side of covering substrate 101, and have tensile stress, material in one embodiment Material is that the temperature of the low pressure boiler tube depositing operation of the grid film layer 102 of silicon nitride is greater than 600 DEG C, chamber pressure 0.2-7Torr, Gas includes silane gas and NH₃, wherein silane gas is SiH₄、SiH₂Cl₂、Si₂H₆One or more, low pressure boiler tube deposit work When skill forms grid film layer, the whole surface (front, the back side and side) of energy while substrate 101 is formed simultaneously grid film layer 102, While formation process is simple, so that the thickness for forming grid film layer is more uniform, surface roughness is lower, and film layer is each More uniform and stress the size of the tensile stress distribution of a position is relatively easy to control.

Etching 102 technique of grid film layer is dry etching.The dry etch process can be anisotropic etc. Plasma etching technique.It should be noted that since subsequent UV light and laser need to pass by the substrate 101 of 111 two sides of groove It is defeated, to irradiate the UV glue formed between substrate and substrate, thus the front and back surface of the substrate with UV light and swash Light can be also removed by the corresponding partial grid film layer in position.

Vapor deposition shadow mask shown in fig. 7 is organic to form blue light, feux rouges, the long layer of green light microcavity tune or blue light, feux rouges, green light Shadow mask when luminous material layer.

It should be noted that being used to form different organic materials layer (such as hole transmission layer, blue light, feux rouges, green light microcavity Adjust long layer, blue light, feux rouges, green organic luminescence layer, electron transfer layer, cathode) Shi Zuowei exposure mask vapor deposition shadow mask knot Structure is essentially identical, and there are areas for most important quantity, the positions and dimensions for distinguishing the opening 108 for being to be formed in grid film layer 102 Not, it can according to the different vapor deposition shadow mask of the Demand Design of different organic materials layer.Form hole transmission layer, electron-transport Layer, the structure and the structure shown in Fig. 7 that shadow mask is deposited of vapor deposition shadow mask when cathode are essentially identical.

With reference to Fig. 8 and Fig. 9, Fig. 8 and Fig. 9 are the structural schematic diagram of one embodiment of the invention substrate, and wherein Fig. 8 is the edge Fig. 9 The schematic diagram of the section structure in the direction cutting line AB provides substrate 301,301 front of substrate includes pixel with reference to Fig. 8 and Fig. 9 Region 31 and the cofferdam region 32 for surrounding pixel region 31；The part of the surface in the cofferdam region 32 of the substrate 301 forms cofferdam Structure 302,402,502.

The substrate 301 is as the carrier for forming OLED, and the substrate includes the positive and opposite back side, as shown in Figure 8 Using the upper surface of substrate 301 as front, using the lower surface of substrate 301 as the back side.

The front of the substrate 301 includes pixel region 31 and the cofferdam region 32 around pixel region 31, pixel region 31 are used to form the luminescence unit of OLED and corresponding circuit, and the cofferdam region 32 is used to form cofferdam structure.

At least one in the substrate 301 and substrate 101 (referring to Fig. 7) is transparent material, another material It can be transparent material or opaque material.The material of the substrate 301 is glass or semiconductor material in one embodiment Material or other suitable materials, shown glass are transparent material, at least one in substrate 301 and substrate 101 (referring to Fig. 7) Material be glass, be subsequently formed UV glue, allowing UV light and laser right by transparent substrate 301 and/or substrate 101 UV glue is irradiated, so that key is conciliate in UV adhesive curing (bonding), to realize substrate 301 and facing for shadow mask (substrate 101) is deposited Separation after Shi Jianhe and temporarily bonding, and in irradiation process, prevent UV light and laser from shining to established OLED single The influence of member.It should be noted that the transparent material can also be other transparent materials outside glass.

In the particular embodiment, the material that can choose substrate 301 is glass, and the material of corresponding substrate 101 is glass Glass；Or the material of substrate 301 is glass, the material of corresponding substrate 101 is semiconductor material；Or the material of substrate 301 For semiconductor material, the material of corresponding substrate 101 is glass.

302,402,502 one side of cofferdam structure plays branch support group when substrate 301 and substrate 101 to be temporarily bonded The effect of plate 301 and substrate 101, so that the spacing that substrate 301 and substrate 101 are kept constant in bonding, in order to subsequent Predetermined thickness and the preferable luminescence unit of pattern are formed on the surface of the pixel region 31 of substrate 301 by evaporation process；It is another Aspect, the cofferdam structure 302,402,502 can will be subsequently formed the substrate 301 and substrate that UV glue is limited on the outside of cofferdam structure Between 101, to prevent from being subsequently formed UV glue to the sprawling of the pixel region 31 of substrate 301, and the formation of luminescence unit is influenced.

In one embodiment, the material of the cofferdam structure 302,402,502 is SiO₂, SiN, SiON, TiN, TaN and gold Belong to one or more of material (such as Cu, Al, W).In one embodiment, the thickness of the cofferdam structure 302,402,502 It is 0.4~0.6 micron.

In one embodiment, the forming process of the cofferdam structure 302 are as follows: form cofferdam on 301 surface of substrate and tie Structure film layer (not shown)；Patterned photoresist layer (not shown) is formed in cofferdam structure thin-film surface；With The patterned photoresist layer is exposure mask, etches the cofferdam structure film, the part table in the cofferdam structure region of substrate Face forms cofferdam structure；Remove the patterned photoresist layer.

Cofferdam structure 302 described in the present embodiment, 402,502 are the U-typed shape or " V " type for being poured over 301 surface of substrate The opening of shape structure, U-typed shape or " V " type shape structure towards substrate 301 edge direction, during subsequent progress dispensing, UV Glue is filled in the first cofferdam structure 302, the U-typed shape of the second cofferdam structure 402 and third cofferdam structure 502 or " V " type shape and opens In mouthful, preferably prevent in the forming process of UV glue and solution bonding after, pixel region from UV glue to substrate flowing, prevent UV Contamination of the glue to the luminescence unit of formation；And since UV glue is limited in U-typed shape or " V " type shaped opening so that UV glue with The binding ability of cofferdam structure increases, and when solving bonding, UV glue can be completely stored in U-typed shape or " V " type shaped opening Without overflowing outward, so that the presence of the UV glue after solution bonding will not influence the bonding precision and stability of subsequent step, because And can not need in the case where carrying out additional UV glue cleaning step, directly carry out subsequent second luminescence unit and third hair The manufacturing process of light unit improves producing efficiency to save the time of technique.It should be noted that described first encloses Weir structure, the second cofferdam structure and third cofferdam structure can be other shapes, such as the recess of rectangle, outward opening Deng.

In other embodiments, the cofferdam structure can be cyclic structure or discrete block structure.

In the present embodiment, the cofferdam structure is divided into the cofferdam structure of three types, including several first cofferdam structures 302, the second cofferdam structure 402 and third cofferdam structure 502, and several first cofferdam structures 302,402 and of the second cofferdam structure Third cofferdam structure 502 is alternately distributed and around pixel region 31.Due to needing to sequentially form sending not when oled panel production The organic material layer (luminescence unit) of same color of light (issuing feux rouges, green light and blue light), forms and issues feux rouges, green light or blue light It is needed when organic material layer (such as shady using the first vapor deposition when forming the organic material layer of blue light-emitting using different vapor deposition shadow mask Cover, using the second vapor deposition shadow mask when forming the organic material layer of green light, using third when forming the organic material layer to glow Shadow mask is deposited), when forming several first cofferdam structures 302, the second cofferdam structure 402 and third cofferdam structure on substrate 301 502, and several first cofferdam structures 302, the second cofferdam structure 402 and third cofferdam structure 502 are alternately distributed and around pixel When region 31, the organic material layer in the organic material layer, green light for sequentially forming blue light-emitting and the organic material layer that glows When, it needs for substrate to be bonded three times with vapor deposition shadow mask (the first vapor deposition shadow mask, the second vapor deposition shadow mask or third vapor deposition shadow mask) When reconciliation bonding, bonding is only needed in wherein corresponding one cofferdam structure (the first cofferdam structure 302, the second cofferdam every time Structure 402 or third cofferdam structure 502) on the outside of substrate and corresponding vapor deposition shadow mask (the first vapor deposition shadow mask, the second vapor deposition are shady One in cover, third vapor deposition shadow mask) between form UV glue, (such as the organic material layer of blue light when being specially bonded for the first time When), UV glue is only formed on the outside of the first cofferdam structure, does not form UV glue, phase on the outside of the second cofferdam structure and third cofferdam structure The organic material layer of green light (such as when) only forms UV glue, third time key on the outside of the second cofferdam structure when answer second bonding The organic material layer of feux rouges (such as when) only forms UV glue on the outside of third cofferdam structure when conjunction, thus every time after solution key step, Remaining UV glue can directly carry out the bonding steps of next step on substrate without additionally using cleaning process removal Xie Jianhou, The time for saving technique improves the producing efficiency of OLED.It should be noted that in other embodiments, the cofferdam structure It can only include a seed type.

With continued reference to FIG. 1, the bit cell of the interim bonding chamber 220 uses mobile working platforms, aligned For the purpose of be so that vapor deposition shadow mask on 101 split shed 108 of grid film layer position and substrate 301 on need organic material layer Position is corresponding.Bit cell can use the existing mobile working platforms for aligning two targets.In the present embodiment, if Dry interim bonding chamber 220 (or bit cell of interim bonding chamber) aligning accuracy having the same, it is interim to be bonded chamber 220 It can satisfy para-linkage between different vapor deposition shadow mask and substrate and form interim bonding units, and the interim bonding in the application Chamber 220 is separated with processing chamber 210, thus when making oled panel, in order to meet the needs of technique, this Shen Oled panel manufacturing system please only needs to change the material of evaporation source in processing chamber, so that it may which easily realizing will The processing chamber for forming a kind of organic material layer is converted into the processing chamber to form another organic material layer, from And effectively raise the technique Adapter Property of oled panel making apparatus.

In other embodiments, several interim bonding chambers 220 (or bit cell of interim bonding chamber) can have Different aligning accuracies, for example the aligning accuracy of the interim bonding chamber 220 in part can be relatively higher, and the interim bonding chamber in part The aligning accuracy of room can be relatively lower, while meeting oled panel production demand, to realize interim bonding chamber 220 Rationally effectively configuration.

First clamping unit may include multiple mechanical walls and/or sucker, and multiple mechanical walls and/or sucker have Multiple freedom degrees (multiple machinery walls and/or sucker can move up and down, move left and right, tilt or rotate).

First clamping unit can not only fixed substrate and vapor deposition shadow mask, and the cofferdam structure on substrate can be made The surface that shadow mask is deposited contacts fitting

The position regulating unit that the dispensing unit includes at least spray head and connect with spray head, UV glue are sprayed from spray head, position It sets and adjusts the position that unit is used to adjust spray head.

In the present embodiment, the UV glue 303 be UV light irradiation when occur glue connection reaction so that substrate and vapor deposition shadow mask into Line unit closes, and in laser irradiation, and fuse glue connection molecule, so that substrate and vapor deposition shadow mask carry out the UV glue of solution bonding, thus can To facilitate and efficiently realize that substrate 301 and the interim bonding of substrate 101 (vapor deposition shadow mask) conciliate bonding steps, so that in substrate On form a kind of organic material layer after, another organic material layer can be formed using similar step, and the steaming after separating Plating shadow mask can repeat to utilize after cleaning.

In one embodiment, the wavelength of the UV light is more than or equal to 365nm, can be greater than with 365nm, 395nm, irradiation energy 1000mj/cm²(millijoule is every square centimeter) can be 1000mj/cm²、1500mj/cm²、2000mj/cm², the wave band of the UV light Energy is lower, smaller to the chemical potential energy excitation of luminous organic material, will not reduce the service life of OLED device, while can obtain again Relatively reliable UV bonding performance.

In one embodiment, the dispensing process of the filling UV glue 303 carries out simultaneously with the UV light irradiation of UV curing glue, with It improves precision when being bonded and prevents contamination of the UV glue to pixel region.In other embodiments, dispensing process can be first carried out, Then UV irradiation process is carried out.

The UV light irradiation unit includes at least UV light emitting unit and light intensity regulating unit, and the UV light emitting unit is used In generating UV light, light intensity regulating unit is used to adjust the intensity for the UV light for being irradiated to UV glue.

Thus in the embodiment of the present invention, when separating due to being temporarily bonded chamber with processing chamber, shadow mask and base is deposited The para-linkage of plate forms interim pairing unit and can complete outside processing chamber, and the interim pairing unit of formation passes through UV Glue bonding has very high fastness, can very easily realize transmission by transfer chamber and cluster operation chamber, so that Contraposition and evaporation process of the shadow mask with substrate, which is deposited, can separate progress, so that being formed at the technique of a certain organic material layer Reason chamber can be easy to transform the processing chamber to form another organic material layer as, improve oled panel making apparatus Technique Adapter Property, and temporarily the vapor deposition shadow mask of nonmetallic materials had both may be implemented in bonding chamber in such a way that UV glue is bonded With the para-linkage of substrate, the para-linkage of the vapor deposition shadow mask and substrate of metal material can also be realized, and solve bonding chamber The separation of vapor deposition shadow mask and substrate can be very easily realized by laser irradiation.

The storage unit for storing vapor deposition shadow mask, the quantity of the vapor deposition shadow mask of storage unit storage be it is multiple, The type of the vapor deposition shadow mask of storage unit storage can be one or more.

The oled panel manufacturing system can also include recycling chamber, and shown recycling chamber will be for that will solve in bonding chamber Isolated vapor deposition shadow mask recycling, and the vapor deposition shadow mask recycled is cleaned and dried, and the vapor deposition shadow mask after cleaning-drying is passed Interim bonding chamber 220 is given to be stored.The oled panel manufacturing system can also include main control unit and several sons Control unit, the main control unit are at least used to send control instruction to several sub-control units, and several sub-control units are used In controlling each chamber (such as each transfer chamber, each processing chamber, each interim bonding chamber, each solution bonding chamber, reclaiming chamber Room all has the sub-control unit of each system) running.

In conjunction with reference Fig. 1 and Figure 10~Figure 12, to form showing for interim pairing structure in a certain interim bonding chamber 230 It is intended to.

With reference to Figure 10, after substrate 301 is sent to interim bonding chamber 230, the first clamping unit clamps substrate 301 and steams Shadow mask is plated, is oppositely arranged so that shadow mask front is deposited with first in the front of substrate 301, bit cell is to the substrate 301 and the One vapor deposition shadow mask is aligned, and the first clamping unit can make substrate 301 and vapor deposition shadow mask during contraposition, after contraposition, the One clamping unit makes cofferdam structure 302 and vapor deposition shadow mask on the substrate 301 contact and make the two fixed.

Referring next to Figure 11, dispensing unit shoots out UV glue, fills UV glue 303, UV glue between substrate 301 and vapor deposition shadow mask 303 are filled between the substrate 301 and vapor deposition shadow mask in 302 outside of cofferdam structure.

In one embodiment, when filling UV glue 303, the first clamping unit can make substrate 301 and vapor deposition shadow mask one Body rotation, and the spray head of dispensing unit is remain stationary.

In another embodiment, when filling UV glue 303, the spray head of the dispensing unit can be along substrate 301 and steaming The outside rotation of shadow mask is plated, and substrate 301 and vapor deposition shadow mask are remain stationary.

Then, with reference to Figure 12, the UV light irradiation unit is for emitting UV light 304, between substrate 301 and vapor deposition shadow mask Filling UV glue 303 is irradiated, so that UV glue 303 solidifies, is bonded together substrate 301 and vapor deposition shadow mask to form interim pairing Structure.

With continued reference to FIG. 1, the transfer chamber 220 includes at least transmission arm or transmission microscope carrier, the transmission arm Or transmission microscope carrier can have multiple freedom degrees (can move up and down, move left and right and rotate).

The cluster operation chamber 200 can include at least transmission arm, and the transmission arm can have multiple freedom degrees (can move up and down, move left and right and rotate).

Several processing chambers 210 are described for forming organic material layer on the substrate of interim pairing unit Processing chamber 210 can be used for being formed hole transmission layer, the long layer of blue light microcavity tune, the long layer of feux rouges microcavity tune, green light microcavity Adjust long layer, blue light organic luminescent material layer, red-light organic luminous material layer, green organic luminescence layer, electron transfer layer, yin Pole or other suitable organic material layers.The hole transmission layer, the long layer of blue light microcavity tune, the long layer of feux rouges microcavity tune, green light are micro- The long layer of intonation, blue light organic luminescent material layer, red-light organic luminous material layer, green organic luminescence layer, electron transfer layer, The material of cathode is organic material, and each organic material is not identical.

The solution bonding chamber 240 includes laser beam irradiation unit and the second clamping unit, and the laser beam irradiation unit is used for Emitting laser, irradiates the cured UV glue in interim pairing structure, second clamping unit is used to clamp interim pairing structure, And after the cured UV glue of laser irradiation, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask.

In one embodiment, laser beam irradiation unit transmitting laser 312 be picosecond laser, pulse frequency 100-1000KHz, Corsslinking molecular in cured UV glue is fused faster, and makes UV glue still be able to maintain cured state, and can protect Demonstrate,prove substrate 301 and vapor deposition separation of the shadow mask without the lateral changing of the relative positions.

Second clamping unit may include multiple mechanical walls and/or sucker, and multiple mechanical walls and/or sucker have Multiple freedom degrees (multiple machinery walls and/or sucker can move up and down, move left and right, tilt or rotate).

In conjunction with reference Fig. 1, Figure 13 and Figure 14, the interim pairing unit for being formed with organic material layer is transmitted to solution bonding chamber In 240, the laser beam irradiation unit in Xie Jianhe chamber 240 emits laser 312, irradiates the cured UV glue in interim pairing structure 303, in whole process, the second clamping unit clamps interim pairing structure, and after laser 312 irradiates cured UV glue, so that The substrate 301 for being formed with organic material layer is separated with vapor deposition shadow mask.

An evaporation source 11, the evaporation source are included at least in the processing chamber 210 in conjunction with described in reference Fig. 1 and Figure 15 11 can generate gaseous organic material when heated, thus after interim pairing structure is sent to processing chamber 210, gaseous state Organic material the surface of substrate 301 is diffused by the opening 108 that is formed in vapor deposition shadow mask, form organic material layer 305.

There is an evaporation source 11, the material of evaporation source is according to shape in the present embodiment in a processing chamber 210 At organic material layer material depending on, such as when hole transmission layer to be formed, the material of the evaporation source 11 is and hole Transmit the corresponding organic material of layer material, when blue light organic luminescent material layer to be formed, the material of the evaporation source 11 be with The corresponding organic material of blue light organic luminescent material layer material.

The aforementioned oled panel manufacturing system is for when making oled panel, certain cluster shown in Fig. 1 to be operated When chamber is as target cluster operation chamber, the transfer chamber connecting with the target cluster operation chamber front end is front end transmission cavity Room, the transfer chamber connecting with the target cluster operation chamber rear end are rear end transfer chamber, and the substrate and vapor deposition shadow mask exist Interim pairing structure is formed with interim be bonded in chamber of front end transfer chamber connection, and passes through the front end transfer chamber Interim pairing structure is transmitted to the target cluster operation chamber；Interim pairing structure is transmitted to by the target cluster operation chamber Corresponding processing chamber；In processing chamber, organic material layer is formed on substrate；Rear end transfer chamber will be formed There are the interim bonding units of organic material layer to be transmitted to the solution connected with rear end transfer chamber from target cluster operation chamber and is bonded chamber Room, in solution bonding chamber, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask.The when the application for needing to illustrate Until being sent into one end of substrate or interim pairing structure, rear end refers to the one end for sending out substrate or interim pairing structure for middle front end.

In one embodiment, when processing chamber >=2 being connect with each cluster operation chamber 200, each cluster behaviour Make several processing chambers that chamber 200 connects as identical processing chamber or different processing chambers, or At least partly quantity is identical processing chamber, and other parts quantity is other processing chambers.Different cluster operations The processing chamber that chamber 200 connects is identical processing chamber or different processing chambers, or different clusters Operation chamber 200 connect processing chamber at least part be identical processing chamber (processing chamber It is identical or different refer to be used to form identical organic material layer or different organic material layers), can specifically be divided into following several Kind situation:

In one embodiment, each cluster operation chamber (200a-200e) connects several identical processing chambers, and not Processing chamber with cluster operation chamber (200a-200e) connection is different processing chamber, it is specific referring to FIG. 2, 5 cluster operation chambers 200a, 200b, 200c, 200d, 200e as shown in Figure 2, each cluster operation chamber (200a-200e) The identical processing chamber of connection 4 (such as 4 identical processing chambers of cluster operation chamber 200a connection in Fig. 2 The identical processing chamber of label in 210a, cluster operation chamber 200b connection 4 identical processing chamber 210b, Fig. 2 Four processing chambers for identical processing chamber, such as label 210a are identical processing chamber, label Tetra- processing chambers of 210b are identical processing chamber), and the process that different cluster operation chambers 200 connects Different chamber (is different process than processing chamber 210a, 210b, 210c, 210d, 210e as shown in Figure 2 Chamber, the processing chamber that cluster operation chamber 200a is connected with cluster operation chamber 200b are different).

Identical processing chamber, which refers to, can form identical organic material layer, and different processing chambers refers to the work Organic material layer is formed in skill processing chamber housing and other processing chambers are distinct.

Processing chamber 210a, 210b, 210c, 210d, 210e are used to form different organic material layers.Implement one In example, the organic material layer that processing chamber 210a, 210b, 210c, 210d, 210e are used to form includes hole transmission layer, The long layer of blue light microcavity tune, the long layer of feux rouges microcavity tune, the long layer of green light microcavity tune, blue light organic luminescent material layer, feux rouges organic light emission Material layer, green organic luminescence layer, electron transfer layer or cathode.That process can be set according to the actual needs Chamber forms that organic material layer accordingly.

Using some cluster operation chamber in Fig. 2 as when cluster operation chamber, it is connected with target cluster operation chamber several Processing chamber is identical processing chamber, and the transfer chamber connecting with the target cluster operation chamber front end is front end Transfer chamber, the transfer chamber being connect with the target cluster operation chamber rear end be rear end transfer chamber when, with the front end Several interim pairing structures are sequentially formed in the interim bonding chamber of transfer chamber connection, before several interim pairing structures are passed through End transfer chamber and target cluster operation chamber are sequentially transmitted in several processing chambers being connected with target cluster operation chamber, Organic material layer is formed accordingly in the substrate surface of several interim pairing structures, and rear end transfer chamber will be formed with organic material The interim bonding units of layer are transmitted to the solution connected with rear end transfer chamber from target cluster operation chamber and are bonded chamber, in Xie Jianhe In chamber, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask, thus substrate is in oled panel manufacturing system Before being repeated with continuous-flow type by different interim bonding chamber, cluster operation chamber, processing chamber reconciliation bonding chamber Step is stated to form different organic light emitting materials, it is thus achieved that the successively batch making of oled panel, and the face OLED Plate manufacturing system is due to being temporarily bonded chamber and processing chamber is separation, thus the technique for forming a certain organic material layer Processing chamber housing is easy to transform the processing chamber to form another organic material layer as, improves the work of oled panel making apparatus Skill Adapter Property.

The technique of one specific oled panel is formed with using oled panel manufacturing system shown in Fig. 2 as an example, passing The substrate outside chamber 220a reception is sent, substrate is sent to and interim being bonded of transfer chamber 220a connection by transfer chamber 220a In chamber 230, substrate and the first vapor deposition shadow mask para-linkage form the first temporarily pairing and tie in the interim bonding chamber 230 Structure；First interim pairing structure is transmitted to processing chamber 210a by transfer chamber 220a and cluster operation chamber 200a, is passed through It is vaporized on the substrate of the first vapor deposition shadow mask exposure and forms hole transmission layer；Cluster operation chamber 200a and transfer chamber 220b is by shape It is bonded chamber 240 with the solution of transfer chamber 220b connection at there is the interim pairing structure of hole transmission layer first to send to, in the solution It is bonded in chamber 240, the substrate for being formed with hole transmission layer is separated with the first vapor deposition shadow mask；Transfer chamber 220b will be formed with The substrate of hole transmission layer be transmitted to interim being bonded in chamber 230 of transfer chamber 220b connection, in the interim bonding chamber Substrate and the second vapor deposition shadow mask para-linkage form the second interim pairing structure in 230；Transfer chamber 220b and cluster operation chamber Second interim pairing structure is transmitted to processing chamber 210b by 200b, by the part for being vaporized on the exposure of the second vapor deposition shadow mask Hole injection layer surface forms blue light organic luminescent material layer；Cluster operation chamber 200b and transfer chamber 220c has blue light is formed The interim pairing structure of machine luminous material layer second, which is sent to, is bonded chamber 240 with the solution of transfer chamber 220c connection, in the solution key It closes in chamber 240, the substrate for being formed with blue light organic luminescent material layer is separated with the second vapor deposition shadow mask；Transfer chamber 220c will Be formed with blue light organic luminescent material layer substrate be transmitted to interim being bonded in chamber 230 of transfer chamber 220c connection, Substrate and third vapor deposition shadow mask para-linkage form the interim pairing structure of third in the interim bonding chamber 230；Transfer chamber The interim pairing structure of third is transmitted to processing chamber 210c by 220c and cluster operation chamber 200c, is had by being vaporized on blue light The partial holes injection layer surface of machine luminous material layer side forms green organic luminescence layer；Cluster operation chamber 200c and biography It send chamber 220d that will form green organic luminescence layer third interim pairing structure and send to connect with transfer chamber 220d The substrate for being formed with green organic luminescence layer and third are deposited in solution bonding chamber 240 for solution bonding chamber 240 Shadow mask separation；The substrate for being formed with green organic luminescence layer is transmitted to and connect with transfer chamber 220d by transfer chamber 220d Interim bonding chamber 230 in, substrate and the 4th vapor deposition shadow mask para-linkage form and the 4th face in the interim bonding chamber 230 When pairing structure；4th interim pairing structure is transmitted to processing chamber by transfer chamber 220d and cluster operation chamber 200d 210d, the partial holes by being vaporized on green organic luminescence layer side inject layer surface and form red-light organic luminous material Layer；Cluster operation chamber 200d and transfer chamber 220e will be formed with the organic light emitting material the 4th of red-light organic luminous material layer Interim pairing structure, which is sent to, is bonded chamber 240 with the solution of transfer chamber 220e connection, in solution bonding chamber 240, by shape It is separated at there is the substrate of red-light organic luminous material layer that shadow mask is deposited with the 4th；Transfer chamber 220e will be formed with the organic hair of feux rouges The substrate of optical material layer be transmitted to interim being bonded in chamber 230 of transfer chamber 220e connection, in the interim bonding chamber 230 Middle substrate and the 5th vapor deposition shadow mask para-linkage form the 5th interim pairing structure；Transfer chamber 220e and cluster operation chamber 200e 5th interim pairing structure is transmitted to processing chamber 210e, by vapor deposition formed covering red-light organic luminous material layer, The electron transfer layer of green organic luminescence layer, blue light organic luminescent material layer surface；Cluster operation chamber 200e and transmission cavity Room 220f sends the interim pairing structure of organic light emitting material the 5th for forming electron transfer layer to be connected with transfer chamber 220f The solution bonding chamber 240 connect will be formed with the substrate and the 5th vapor deposition shadow mask of electron transfer layer in solution bonding chamber 240 Separation, transfer chamber 220f will be formed with electron-transport laminar substrate and send out oled panel manufacturing system.

It should be noted that if stem substrate can once carry out oled panel manufacturing system progress streamlined in the above process Production.

In another embodiment, each cluster operation chamber connects several different processing chambers (several different works Skill processing chamber housing refers to that at least one processing chamber is different from other processing chambers in several processing chambers, than When connecting two processing chambers such as some cluster operation chamber, two processing chambers are different, such as the operation of some cluster When chamber connects three processing chambers, a kind of situation is that can be all different with three processing chambers, another situation Identical for two of them processing chamber, two another processing chambers are not identical), and different cluster operation chamber connections Processing chamber be different processing chambers.

In another embodiment, each cluster operation chamber connects several different processing chambers (several different works Skill processing chamber housing refers to that at least one processing chamber is different from other processing chambers in several processing chambers, than When connecting two processing chambers such as some cluster operation chamber, two processing chambers are different, such as the operation of some cluster When chamber connects three processing chambers, a kind of situation is that can be all different with three processing chambers, another situation Identical for two of them processing chamber, two another processing chambers are not identical), and different cluster operation chambers connects The processing chamber connect can part it is identical.

In another embodiment, partial amt is identical in several processing chambers of part cluster operation chamber connection Processing chamber, partial amt are different processing chamber, other parts cluster operation chamber Joining Technology processing chamber Room is identical processing chamber, and the processing chamber of different cluster operation chamber connections is different process chamber Room, specifically referring to FIG. 3,6 cluster operation chambers (200a-200f) as shown in Figure 3, first five cluster operation chamber (200a- 200e) (in Fig. 3 from left to right) in each cluster operation chamber connect 4 processing chambers, two of them processing chamber It is to be used to form a certain organic material layer, other two processing chamber is for another organic material layer (processing chamber of first cluster operation chamber 200a connection of number includes two processing chambers from left to right in Fig. 3 210a and two processing chamber 210b, the processing chamber of second cluster operation chamber 200b connection include two techniques The identical processing chamber of label is at identical technique in processing chamber housing 210c and two processing chambers 210d, Fig. 3 Chamber is managed, label difference is then different processing chamber, for example 2 processing chambers of label 210a are identical work Skill processing chamber housing, label 210b two processing chambers be identical processing chamber, label 210a process chamber Room is different processing chambers from the processing chamber of label 210b), the 6th cluster operation chamber 200f two phases of connection With processing chamber 210j, and the processing chamber of different cluster operation chamber (200a-200f) connection it is different (such as Processing chamber 210a, 210b, 210c, 210d, 210e, 210f, 210g, 210h, 210i, 210j shown in Fig. 3 are not Same processing chamber).

Processing chamber 210a, 210b, 210c, 210d, 210e, 210f, 210g, 210h, 210i, 210j, 210k are used In the different organic material layer of formation.In one embodiment, processing chamber 210a, 210b, 210c, 210d, 210e, The organic material layer that 210f, 210g, 210h, 210i, 210j are used to form includes hole transmission layer, and the long layer of blue light microcavity tune is red The long layer of light microcavity tune, the long layer of green light microcavity tune, blue light organic luminescent material layer, red-light organic luminous material layer, the organic hair of green light Optical material layer, electron transfer layer or cathode.That processing chamber can be set according to the actual needs and form that accordingly Kind organic material layer.

Using some cluster operation chamber in the 200a-200e in Fig. 3 as when cluster operation chamber, with target cluster operating cavity The connected several processing chambers in room are different processing chambers, the biography connecting with the target cluster operation chamber front end Sending chamber is front end transfer chamber, when the transfer chamber connecting with the target cluster operation chamber rear end is rear end transfer chamber, Interim pairing structure is formed in interim be bonded in chamber connected with the front end transfer chamber, first by the interim pairing structure A processing chamber being connected with target cluster operation chamber is transmitted to by front end transfer chamber and target cluster operation chamber In, shadow mask is deposited as exposure mask, the first organic material layer is formed in the substrate surface of the interim pairing structure, then will be formed There is the interim pairing structure of the first organic material layer to be transmitted to by target cluster operation chamber to be connected with target cluster operation chamber In another processing chamber, using identical vapor deposition shadow mask as exposure mask, second is formed in the first organic material layer of substrate Organic material layer；Then rear end transfer chamber will be formed with the interim bonding units of the second organic material layer from target cluster operating cavity Room, which is transmitted to, is bonded chamber with the solution of rear end transfer chamber connection, in solution bonding chamber, so that being formed with the second organic material The substrate and vapor deposition shadow mask of layer separate, thus when making oled panel realization to forming at least two layers organic material on multiple substrates The continuous-flow type of the bed of material is handled, and while forming two layers of organic material layer only need to once be aligned and bonding technology, saves work The time of skill, and the oled panel manufacturing system is due to being temporarily bonded chamber and processing chamber is separation, thus shape It is easy to transform the processing chamber to form another organic material layer (ratio as at the processing chamber of a certain organic material layer It, can be by processing chamber if the processing chamber 210c in Fig. 3 was used to form the long layer of blue light microcavity tune originally 210c, which is transform as, is used to form hole transmission layer), improve the technique Adapter Property of oled panel making apparatus.

In a specific embodiment, with continued reference to FIG. 3, the cluster operation chamber includes successively adjacent the first cluster behaviour Make chamber 200a, the second cluster operation chamber 200b, third cluster operation chamber 200c, the 4th cluster operation chamber 200d, the 5th cluster behaviour Make chamber 200e, the 6th cluster operation chamber 200f, the transfer chamber includes the first transfer chamber 220a, the second transfer chamber 220b, third transfer chamber 220c, the 4th transfer chamber 220d, the 5th transfer chamber 220e, the 6th transfer chamber 220f, the 7th Transfer chamber 220g, the first transfer chamber 220a are connect with the first cluster operation chamber 200a, and the second transfer chamber 220b is by first Cluster operation chamber 200a and the second cluster operation chamber 200b connection, third transfer chamber 220c by the second cluster operation chamber 200b and Third cluster operation chamber 200c connection, the 4th transfer chamber 220d is by third cluster operation chamber 200c and the 4th cluster operation chamber 200d connection, the 5th transfer chamber 220e pass the 4th cluster operation chamber 200d and the 5th cluster operation chamber 200e connection, the 6th Send chamber 220f by the 5th cluster operation chamber 200e and the 6th cluster operation chamber 200f connection, the 7th transfer chamber 220g and the 6th The 200f connection of cluster operation chamber；(the second transfer chamber 220b to the 6th is passed each transfer chamber between adjacent cluster operation chamber Send chamber 220f) chamber 230 and at least one solution bonding connection of chamber 240 are temporarily bonded at least one, positioned at the two of both ends At least one interim bonding chamber of the one of connection of a transfer chamber, another connects at least one solution bonding chamber, and first Transfer chamber 220a connects at least one interim bonding chamber 230, and the 7th transfer chamber 220g connects at least one solution bonding chamber Room 240 is (in another case, two transfer chambers for being located at both ends can temporarily be bonded chamber 230 and extremely at least one Few solution bonding chamber 240 connects, i.e., the first transfer chamber 220a and the 7th transfer chamber 220g can be at least one Interim bonding chamber 230 and at least one solution bonding chamber 240 connect)；At the technique being connect with the first cluster operation chamber 200a Reason chamber includes at least one p-type doping hole transmission layer chamber 210a and at least one public hole transmission layer chamber 210b, It include at least one blue light microcavity adjustment layer chamber 210c and extremely with the second cluster operation chamber 200b processing chamber connecting A few blue light organic luminescent material layer chamber 210d, the processing chamber connecting with third cluster operation chamber 200c include extremely A few green light microcavity adjustment layer chamber 210e and at least one green organic luminescence layer chamber 210f, operates with the 4th cluster The processing chamber of chamber 200d connection includes that at least one feux rouges microcavity adjustment layer chamber 210g and at least one feux rouges have Machine luminous material layer chamber 210f includes that at least one electronics passes with the 5th cluster operation chamber 200d processing chamber connecting Defeated layer chamber 210h and at least one cathode layer chamber 210i, the processing chamber packet being connect with the 6th cluster operation chamber 200f Include at least one coating chamber 210j.

In another embodiment, partial amt is identical in several processing chambers of part cluster operation chamber connection Processing chamber, partial amt are different processing chamber, other parts cluster operation chamber Joining Technology processing chamber Room is identical processing chamber, and the processing chamber of different cluster operation chamber connection be can part it is identical, tool Body is referring to FIG. 4,6 cluster operation chambers (200a-200f) as shown in Figure 4, first five cluster operation chamber (200a-200e) Each cluster operation chamber connects 4 processing chambers in (in Fig. 4 from left to right), and two of them processing chamber is to use In forming a certain organic material layer, other two processing chamber be for another organic material layer (in Fig. 4 from The processing chamber of first cluster operation chamber 200a connection of from left to right number includes two processing chamber 210a and two A processing chamber 210b, the processing chamber of second cluster operation chamber 200b connection include two processing chambers The identical processing chamber of label is identical processing chamber, mark in 210c and two processing chamber 210d, Fig. 4 Number difference is then different processing chamber, for example 2 processing chambers of label 210a are identical process chamber Room, label 210b two processing chambers be identical processing chamber, label 210a processing chamber and label The processing chamber of 210b is different processing chamber), the 6th cluster operation chamber 200f two identical techniques of connection Processing chamber housing 210j, and the processing chamber of different cluster operation chamber (200a-200f) connection can part it is identical (such as It is connected in Fig. 4 with first cluster operation chamber 200a processing chamber 210b being connected and with second cluster operation chamber 200b Processing chamber 210b be identical processing chamber).

In the manufacturing process of oled panel, since the thickness of different organic material layers may be different, thickness is formed Time needed for thicker organic material layer is longer, and the time needed for forming the organic material layer of thinner thickness gets over It is short, if when stem substrate streamlined operation in oled panel manufacturing system, when a certain substrate is in a processing chamber The thicker a certain organic material layer of thickness is formed, and other substrates form the another of thinner thickness in other processing chamber Outer organic material layer, after the organic material layer of thinner thickness is formed, the thicker organic material layer of thickness is still being formed, because And the corresponding substrate of organic material layer of thinner thickness need for the medium thickness to be formed of processing chamber it is thicker The substrate of organic material layer reduces the efficiency of production so that the technique pitch time of whole system is affected.And it adopts With oled panel manufacturing system above-mentioned, the processing chamber that is connected due to different cluster operation chambers can part it is identical, The thicker organic material layer of thickness thus can split at least thickness is two layers identical, it is corresponding in different processing chambers Growing the organic material layer of respective thickness, (for example Fig. 4 is in the processing chamber being connected with first cluster operation chamber 200a 210b grows the organic material layer of a part of thickness, then in the processing chamber being connected with second cluster operation chamber 200b 210b grows the organic material layer of another part thickness) so that the organic material layer of each processing chamber growth time difference compared with It is small or essentially identical, to reduce the growth of part organic material layer to the technique pitch time of entire OLED manufacturing system It influences.

In a specific embodiment, with continued reference to FIG. 4, the cluster operation chamber includes successively adjacent the first cluster behaviour Make chamber 200a, the second cluster operation chamber 200b, third cluster operation chamber 200c, the 4th cluster operation chamber 200d, the 5th cluster behaviour Make chamber 200e, the 6th cluster operation chamber 200f, the transfer chamber includes the first transfer chamber 220a, the second transfer chamber 220b, third transfer chamber 220c, the 4th transfer chamber 220d, the 5th transfer chamber 220e, the 6th transfer chamber 220f, the 7th Transfer chamber 220g, the first transfer chamber 220a are connect with the first cluster operation chamber 200a, and the second transfer chamber 220b is by first Cluster operation chamber 200a and the second cluster operation chamber 200b connection, third transfer chamber 220c by the second cluster operation chamber 200b and Third cluster operation chamber 200c connection, the 4th transfer chamber 220d is by third cluster operation chamber 200c and the 4th cluster operation chamber 200d connection, the 5th transfer chamber 220e pass the 4th cluster operation chamber 200d and the 5th cluster operation chamber 200e connection, the 6th Send chamber 220f by the 5th cluster operation chamber 200e and the 6th cluster operation chamber 200f connection, the 7th transfer chamber 220g and the 6th The 200f connection of cluster operation chamber；(the second transfer chamber 220b to the 6th is passed each transfer chamber between adjacent cluster operation chamber Send chamber 220f) chamber 230 and at least one solution bonding connection of chamber 240 are temporarily bonded at least one, positioned at the two of both ends At least one interim bonding chamber of the one of connection of a transfer chamber, another connects at least one solution bonding chamber, and first Transfer chamber 220a connects at least one interim bonding chamber 230, and the 7th transfer chamber 220g connects at least one solution bonding chamber Room 240 is (in another case, two transfer chambers for being located at both ends can temporarily be bonded chamber 230 and extremely at least one Few solution bonding chamber 240 connects, i.e., the first transfer chamber 220a and the 7th transfer chamber 220g can be at least one Interim bonding chamber 230 and at least one solution bonding chamber 240 connect)；At the technique being connect with the first cluster operation chamber 200a Reason chamber includes at least one p-type doping hole transmission layer chamber 210a and at least one public hole transmission layer chamber 210b, It include at least one public hole transmission layer chamber 210b and extremely with the second cluster operation chamber 200b processing chamber connecting A few blue light organic luminescent material layer chamber 210d, the processing chamber connecting with third cluster operation chamber 200c include extremely A few green light microcavity adjustment layer chamber 210e and at least one green organic luminescence layer chamber 210f, operates with the 4th cluster The processing chamber of chamber 200d connection includes that at least one feux rouges microcavity adjustment layer chamber 210g and at least one feux rouges have Machine luminous material layer chamber 210f includes that at least one electronics passes with the 5th cluster operation chamber 200d processing chamber connecting Defeated layer chamber 210h and at least one cathode layer chamber 210i, the processing chamber packet being connect with the 6th cluster operation chamber 200f Include at least one coating chamber 210j.

In another embodiment, referring to FIG. 5, each cluster operation chamber 200 passes through phase in the oled panel manufacturing system Circlewise, each transmission chamber 220 is temporarily bonded chamber 230 and at least one at least one for the connection of transmission chamber 220 answered Solution bonding chamber 240 connects, and each cluster operation chamber 200 is connect at least one processing chamber 210.

Details are not described herein for the restriction of each chamber in cricoid oled panel manufacturing system, please refers to the OLED of aforementioned serial Panel manufacturing system partially limits accordingly.Cricoid oled panel manufacturing system and aforementioned oled panel manufacturing system are unique Difference is that serial structure both ends are respectively necessary for one transfer chamber of connection, and cyclic structure both ends only need a transmission cavity Room, i.e. cyclic structure can save a transmission chamber and corresponding solution bonding chamber and interim bonding chamber.

Cricoid oled panel manufacturing system shown in fig. 5 can choose one of transmission chamber 220 and carry out with external The transmission and reception of substrate, substrate are with the production of aforementioned oled panel in the process for the production that the oled panel manufacturing system carries out Production process in system is essentially identical, and details are not described herein, please refers to aforementioned relevant production process, and unique distinctive points exist When, substrate is sent into that transmission chamber from the external world, in oled panel manufacturing system after corresponding technique last or quilt Send back to the transmission chamber, is then sent to outside.

It should be noted that the transmission chamber at the oled panel manufacturing system both ends in foregoing embodiments has one to be used for Substrate is received from outside, has one substrate is sent to the external world.Each chamber can have corresponding vacuum unit as needed, so that The vacuum for obtaining each chamber meets the requirement of technique, and each chamber can be set by controlling the window that can be closed and open.

In another embodiment, referring to FIG. 6, oled panel manufacturing system includes a cluster operation chamber 200, Ruo Ganchuan Send chamber 220, several processing chambers 210, several interim bonding chambers 230, several solutions bonding chambers 240, wherein

The cluster operation chamber 200 and at least one (at least one expression can be for one or greater than one) process Chamber 210 connects；

The leading portion of the cluster operation chamber 200 and rear end are at least connected with a transfer chamber 220 respectively；

It is temporarily bonded chamber connection at least one with the transfer chamber of 200 front end of cluster operation chamber connection, is operated with cluster The transfer chamber of 200 rear end of chamber connection is bonded chamber connection at least one solution；

The interim bonding chamber 230 in vapor deposition shadow mask and is transmitted into the chamber at least for storing vapor deposition shadow mask After substrate is aligned, substrate and vapor deposition shadow mask are bonded together by UV glue, form interim pairing structure；

The transfer chamber 220 at least for by substrate or interim pairing structure in cluster operation chamber, be temporarily bonded chamber It is transmitted between reconciliation bonding chamber；

It should be noted that the restriction of each chamber please refers to the restriction of previous embodiment corresponding chambers in the present embodiment, This is repeated no more.

In one embodiment, the cluster operation chamber 200 connects several (being more than or equal to 2) processing chambers 210, cluster 200 front-end and back-end of operation chamber are separately connected a transfer chamber, and the transfer chamber 220 of front end is at least connected with an ephemeral key Chamber 230 is closed, the transfer chamber 220 of rear end is at least connected with a solution bonding chamber 240.The transfer chamber 220 of front end is for connecing The substrate being conveyed into outside oled panel manufacturing system is received, and substrate can be sent to interim bonding chamber or cluster operation The interim pairing structure formed in temporarily bonding chamber can also be sent to cluster behaviour by the transfer chamber 220 of chamber 200, front end Make chamber 200, cluster operation chamber 200 is used to substrate or interim pairing structure being sent to corresponding processing chamber 210, Organic material layer is formed on substrate, the transfer chamber 220 of rear end is used to be formed the interim pairing structure transmission of organic material layer To solution be bonded chamber 240, solution bonding chamber 240 by be formed with organic material substrate and vapor deposition shadow mask it is discrete, the rear end Transfer chamber 220 be also used to by be formed with organic material substrate go out be sent to outside oled panel manufacturing system.It needs to illustrate , in other embodiments, the transfer chamber 220 of the front end other than being at least connected with an interim bonding chamber 230, It can connect at least one solution bonding chamber 240；The transfer chamber of the rear end is in addition to being at least connected with a solution bonding chamber 240 Outside, it also can connect at least one interim bonding chamber 230, the transfer chamber of front end both can be used as reception external substrate at this time Chamber can be used as the chamber for sending out the substrate after process, the transfer chamber of rear end both can be used as process The chamber that substrate afterwards is sent out can be used as the chamber for receiving external substrate.Thus, oled panel manufacturing system above-mentioned can be with Meet and form at least one layer of organic material layer on substrate, several situations can be divided into, the first situation: several process chambers Room 210 is identical processing chamber, and the transfer chamber 220 of front end is at least connected with an interim bonding chamber 230, rear end When transfer chamber 220 is at least connected with solution bonding chamber 240, the transfer chamber of front end receive outside substrate, then substrate Transmit into front end transfer chamber connect it is interim be bonded in chamber (this be temporarily bonded in chamber is stored with vapor deposition shadow mask), substrate Interim pairing structure is formed with interim be bonded after the vapor deposition shadow mask stored in chamber carries out para-linkage, passes through front end transmission cavity Interim pairing structure is sent to processing chamber by room and cluster operation chamber 200, organic material layer is formed on substrate, then The interim pairing structure for being formed with organic material layer is sent to rear end transmission cavity by cluster operation chamber 200 and rear end transfer chamber The solution of room connection is bonded chamber, in solution bonding chamber, the substrate for being formed with organic material layer is separated with vapor deposition shadow mask, then The substrate for being formed with organic material layer is transmitted to outside by rear end transfer chamber, and such case is realized to being formed on multiple substrates The continuous-flow type of machine material layer is handled, and the oled panel manufacturing system is due to being temporarily bonded chamber and processing chamber is point From, thus the processing chamber for forming a certain organic material layer is easy to transform the technique to form another organic material layer as Processing chamber housing improves the technique Adapter Property of oled panel making apparatus.

Second situation: several processing chambers 210 are identical processing chamber, the transfer chamber 220 of front end Other than being at least connected with an interim bonding chamber 230, and connect at least one solution bonding chamber 240, the transmission of the rear end Chamber is other than being at least connected with solution bonding chamber 240, and when connecting at least one interim bonding chamber 230, the biography of front end Send the transfer chamber of chamber and rear end that can receive external (several) substrate simultaneously, then substrate transmit into front end transmission cavity In the interim bonding chamber (this, which is temporarily bonded in chamber, is stored with vapor deposition shadow mask) of room (or rear end transfer chamber) connection, substrate Interim pairing structure is formed with interim be bonded after the vapor deposition shadow mask stored in chamber carries out para-linkage, passes through front end transmission cavity Interim pairing structure is sent to several processing chambers by room (or rear end transfer chamber) and cluster operation chamber 200, in base Organic material layer is formed on plate, the interim pairing structure for being then formed with organic material layer passes through cluster operation chamber 200 and front end Transfer chamber (either rear end transfer chamber) is sent to the solution bonding chamber of front end transfer chamber (or rear end transfer chamber) connection Room, solution bonding chamber in, by the substrate for being formed with organic material layer be deposited shadow mask separate, then front end transfer chamber (or Person rear end transfer chamber) substrate for being formed with organic material layer is transmitted to outside, thus in this case can be to multiple bases The processing that organic material layer is formed while plate, improves the efficiency of technique, and the oled panel manufacturing system is due to interim Bonding chamber and processing chamber are separation, thus the processing chamber for forming a certain organic material layer is easy to be transformed For the processing chamber for forming another organic material layer, the technique Adapter Property of oled panel making apparatus is improved.

The third situation: several processing chambers 210 include at least different two kinds of processing chambers, for example wrap Include at least one first processing chamber and at least one second processing chamber, the first processing chamber and the second work Skill processing chamber housing is used to form different organic material layers, and the transfer chamber 220 of front end is at least connected with an interim bonding chamber 230, the base when transfer chamber 220 of rear end is at least connected with a solution bonding chamber 240, outside the transfer chamber reception of front end Plate, then substrate is transmitted interim be bonded chamber (this is temporarily bonded in chamber and is stored with vapor deposition into what front end transfer chamber connected Shadow mask) in, substrate forms interim pairing structure with interim be bonded after the vapor deposition shadow mask stored in chamber carries out para-linkage, leads to It crosses front end transfer chamber and cluster operation chamber 200 and interim pairing structure is sent to the first processing chamber, shadow mask is deposited For exposure mask, the first organic material layer is formed by being vaporized on substrate, is then formed with the interim pairing of the first organic material layer Structure is transmitted to the second processing chamber by cluster operation chamber 200, using aforementioned identical vapor deposition shadow mask as exposure mask, passes through steaming The second organic material layer is formed on the first organic material layer being plated on substrate, then will be formed with facing for the second organic material layer When pairing structure the solution that rear end transfer chamber connects be sent to by cluster operation chamber 200 and rear end transfer chamber be bonded chamber, In solution bonding chamber, the substrate for being formed with the second organic material layer is separated with vapor deposition shadow mask, then rear end transfer chamber will The substrate for being formed with the second organic material layer is transmitted to outside, and such case is realized organic to forming at least two layers on multiple substrates The continuous-flow type of material layer is handled, and while forming two layers of organic material layer only need to once be aligned and bonding technology, saves The time of technique, and the oled panel manufacturing system due to be temporarily bonded chamber and processing chamber be separation, thus The processing chamber for forming a certain organic material layer is easy to transform the processing chamber to form another organic material layer as, Improve the technique Adapter Property of oled panel making apparatus.

4th kind of situation: several processing chambers 210 be including at least several different two kinds of processing chambers, Such as including at least two first processing chambers and at least two second processing chambers, the first processing chamber and Second processing chamber is used to form different organic material layers, and the transfer chamber 220 of front end is faced in addition to being at least connected with one Outside Shi Jianhe chamber 230, and at least one solution bonding chamber 240 is connected, the transfer chamber of the rear end is in addition to being at least connected with one Outside a solution bonding chamber 240, and when connecting at least one interim bonding chamber 230, the transfer chamber of front end and the transmission of rear end Chamber can receive external (several) substrate simultaneously, then substrate transmit into front end transfer chamber (or rear end transmission cavity Room) connection interim bonding chamber (this temporarily be bonded in chamber is stored with is deposited shadow mask) in, substrate interim is bonded chamber with this The vapor deposition shadow mask of middle storage forms interim pairing structure after carrying out para-linkage, and by front end transfer chamber, (or rear end is transmitted Chamber) and cluster operation chamber 200 interim pairing structure is sent to the first processing chamber, it is organic that first is formed on substrate Material layer；Then the interim pairing structure for being formed with the first organic material layer is transmitted to the second technique by cluster operation chamber 200 Processing chamber housing, using aforementioned identical vapor deposition shadow mask as exposure mask, by forming on the first organic material layer for being vaporized on substrate Two organic material layers；Then, the interim pairing structure for being formed with the second organic material layer is passed by cluster operation chamber 200 and front end The solution bonding chamber for sending chamber (either rear end transfer chamber) to be sent to front end transfer chamber (or rear end transfer chamber) connection, Solution bonding chamber in, by the substrate for being formed with the second organic material layer be deposited shadow mask separate, then front end transfer chamber (or Person rear end transfer chamber) substrate for being formed with organic material layer is transmitted to outside, thus in this case can be to multiple bases The processing that at least two layers organic material layer is formed while plate improves the efficiency of technique, and forms two layers of organic material layer When only need to once be aligned and bonding technology, save the time of technique, and the oled panel manufacturing system is due to interim Bonding chamber and processing chamber are separation, thus the processing chamber for forming a certain organic material layer is easy to be transformed For the processing chamber for forming another organic material layer, the technique Adapter Property of oled panel making apparatus is improved.

Another embodiment of the present invention has additionally provided a kind of device for being used to form interim pairing unit, comprising: ephemeral key Chamber is closed, the interim bonding chamber is at least used to store vapor deposition shadow mask, and in vapor deposition shadow mask and transmits the substrate into the chamber After being aligned, substrate and vapor deposition shadow mask are bonded together by UV glue, form interim pairing structure.

In one embodiment, the interim bonding chamber includes: bit cell, the first clamping unit, dispensing unit, UV light Illumination unit and storage unit, wherein the bit cell is used to align by substrate and for shadow mask；First clamping Unit is used to clamp substrate and vapor deposition shadow mask, and after substrate and vapor deposition shadow mask are aligned, so that substrate connects with vapor deposition shadow mask Touching fitting；The dispensing unit be used for substrate and vapor deposition shadow mask contact fitting after, shoot out UV glue, substrate and vapor deposition shadow mask it Between fill UV glue；The UV light irradiation unit is irradiated filling UV glue between substrate and vapor deposition shadow mask for emitting UV light, So that UV adhesive curing, is bonded together substrate and vapor deposition shadow mask to form interim pairing structure；The storage unit is for storing Shadow mask is deposited.

In one embodiment, the UV glue that the dispensing unit shoots out is that glue connection reaction occurs in the irradiation of UV light, so that base Plate is bonded with vapor deposition shadow mask, and in laser irradiation, and fuse glue connection molecule, so that substrate and vapor deposition shadow mask carry out solution bonding UV glue.

In one embodiment, the wavelength of the UV light of the UV light irradiation unit transmitting is more than or equal to 365nm, and irradiation energy is big In 1000mj/cm²。

It should be noted that other restrictions about interim bonding chamber, please refer to aforementioned oled panel manufacturing system phase The restriction of part is answered, details are not described herein.

Figure 16 is please referred to, one embodiment of the invention provides a kind of structure of oled panel, and the oled panel includes: base Plate 601,601 surface of substrate have transparency conducting layer (material of transparency conducting layer is ITO)；P-type on substrate 601 Adulterate hole transmission layer 602；Public hole transmission layer 603 positioned at p-type doping 602 surface of hole transmission layer；Positioned at public sky The blue light microcavity adjustment layer 604 of 603 part of the surface of cave transport layer；Public hole positioned at 604 side of blue light microcavity adjustment layer passes The green light microcavity adjustment layer 605 of defeated 603 part of the surface of layer；Public hole transmission layer positioned at 605 side of green light microcavity adjustment layer The thickness of the feux rouges microcavity adjustment layer 606 of 603 part of the surfaces, the blue light microcavity adjustment layer 604 is less than green light microcavity adjustment layer 605 thickness, the thickness of green light microcavity adjustment layer 605 are less than the thickness of feux rouges microcavity adjustment layer 606, with match different blue lights, The wavelength of green light and feux rouges improves the display effect of oled panel；The organic hair of blue light positioned at 604 surface of blue light microcavity adjustment layer Optical material layer 607；Green organic luminescence layer 608 positioned at 605 surface of green light microcavity adjustment layer；It is adjusted positioned at feux rouges microcavity The red-light organic luminous material layer 609 on 606 surface of layer；Cover blue light organic luminescent material layer 607, green organic luminescence layer 608, the electron transfer layer 610 of red-light organic luminous material layer 609；Cathode 611 on electron transfer layer 610；Positioned at yin Coating on pole 611.The structural schematic diagram of one RGB luminescence unit of oled panel is illustrated only in Figure 16, in practice one There are many RGB luminescence units as shown in figure 16 in block oled panel, and in oled panel manufacturing process, multiple RGB Luminescence unit makes simultaneously.

Figure 17 is to make oled panel shown in Figure 16 using the oled panel manufacturing system in one embodiment of the invention Structural schematic diagram, the arrow in Figure 17 with dotted line indicate movement line of the substrate in oled panel manufacturing system.

In conjunction with reference Figure 16 and Figure 17, manufacturing process include: the substrate 601 by the first transfer chamber 220a transmit into Interim with the first transfer chamber connection 220 is bonded in chamber 230, this, which is temporarily bonded in chamber 230, is stored with the shade of the first vapor deposition Cover, in the interim bonding chamber 230, the substrate 601 and the first vapor deposition shadow mask bond together to form the first interim pairing unit；It connects , the first interim pairing unit is sent to by p-type doping sky by the first transfer chamber 220a and the first cluster operation chamber 200a In the transport layer chamber 210a of cave, using the first vapor deposition shadow mask as exposure mask, p-type doping is formed on 601 surface of substrate by evaporation process Hole transmission layer 602；Then, the first interim bonding units are adulterated from p-type by hole transport by the first cluster operation chamber 200a Layer chamber 210a is sent to public hole transmission layer chamber 210b, equally using the first vapor deposition shadow mask as exposure mask, passes through evaporation process Public hole transmission layer 603 is formed on p-type doping 602 surface of hole transmission layer；Then, pass through the first cluster operation chamber 200a The the first interim pairing unit for being formed with public hole transmission layer 603 is sent to and the second transmission with the second transfer chamber 220b The solution of chamber 220b connection is bonded chamber 240, carries out solution bonding, by the first vapor deposition shadow mask and is formed with public hole transmission layer 603 substrate 601 separates；Then, the second transfer chamber 220b transmits the substrate 601 for being formed with public hole transmission layer 603 To chamber 230 is bonded with the second the interim of transfer chamber 220b connection, this, which is temporarily bonded in chamber, is stored with the second vapor deposition shadow mask, In the interim bonding chamber, the substrate for being formed with public hole transmission layer 603 and the second vapor deposition shadow mask are bonded together to form second Interim pairing unit；Then, by the second transfer chamber 220b and the second cluster operation chamber 200b by the second interim pairing unit It is sent in blue light microcavity adjustment layer chamber 210c, using the second vapor deposition shadow mask as exposure mask, passes through public affairs of the evaporation process on substrate The part of the surface of hole transmission layer 603 forms blue light microcavity adjustment layer 604 altogether；It then, will by the second cluster operation chamber 200b Second interim bonding units are sent to blue light organic luminescent material layer chamber 210d from blue light microcavity adjustment layer chamber 210c, with Two vapor deposition shadow masks are exposure mask, form blue light organic luminescent material layer on 604 surface of blue light microcavity adjustment layer by evaporation process 607；Then, blue light organic luminescent material layer will be formed with by the second cluster operation chamber 200a and third transfer chamber 220c The interim pairing unit of the second of 607, which is sent to, is bonded chamber 240 with the solution of third transfer chamber 220c connection, carries out solution bonding, Second vapor deposition shadow mask and the substrate 601 for being formed with blue light organic luminescent material layer 607 are separated；Then, third transfer chamber The substrate 601 for forming blue light organic luminescent material layer 607 is sent to the ephemeral key connecting with third transfer chamber 220c by 220c Close chamber 230, this temporarily be bonded in chamber be stored with third be deposited shadow mask will be formed with blue light in the interim bonding chamber Substrate 601 and third the vapor deposition shadow mask of organic light emitting material bond together to form the interim pairing unit of third；Then, it is passed by third Send chamber 220c and third cluster operation chamber 200c that the interim pairing unit of third is sent to green light microcavity adjustment layer chamber 210e In, using third vapor deposition shadow mask as exposure mask, pass through blue light organic luminescent material layer 607 side of the evaporation process on substrate 601 The part of the surface of public hole transmission layer 603 forms green light microcavity adjustment layer 605；Then, pass through third cluster operation chamber 200c The interim bonding units of third are sent to green organic luminescence layer chamber 210f from green light microcavity adjustment layer chamber 210e, with It is exposure mask that shadow mask, which is deposited, in third, forms green organic luminescence layer on 605 surface of green light microcavity adjustment layer by evaporation process 608；Then, green organic luminescence layer will be formed with by third cluster operation chamber 200c and the 4th transfer chamber 220d The interim pairing unit of 608 third, which is sent to, is bonded chamber 240 with the solution of the 4th transfer chamber 220d connection, carries out solution bonding, Third vapor deposition shadow mask and the substrate 601 for being formed with green organic luminescence layer are separated；Then, the 4th transfer chamber 220d will The substrate 601 for forming green organic luminescence layer, which is sent to, is bonded chamber 230 with the 4th the interim of transfer chamber 220d connection, The 4th vapor deposition shadow mask is stored in the interim bonding chamber will be formed with green light organic light emission material in the interim bonding chamber The substrate 601 of the bed of material and the 4th vapor deposition shadow mask bond together to form the 4th interim pairing unit；Then, pass through the 4th transfer chamber 220d The 4th interim pairing unit is sent in feux rouges microcavity adjustment layer chamber 210g with the 4th cluster operation chamber 200d, is steamed with the 4th Plating shadow mask is exposure mask, passes through the public hole transport of green organic luminescence layer 608 side of the evaporation process on substrate 601 The part of the surface of layer 603 forms feux rouges microcavity adjustment layer 606；Then, by the 4th cluster operation chamber 200d by the 4th ephemeral key It closes unit and is sent to red-light organic luminous material layer chamber 210f from feux rouges microcavity adjustment layer chamber 210g, with the 4th vapor deposition shadow mask For exposure mask, red-light organic luminous material layer 609 is formed on 606 surface of feux rouges microcavity adjustment layer by evaporation process；Then, pass through The 4th interim pairing that 4th cluster operation chamber 200d and the 5th transfer chamber 220e will be formed with red-light organic luminous material layer Unit, which is sent to, is bonded chamber 240 with the solution of the 5th transfer chamber 220e connection, carries out solution bonding, by the 4th vapor deposition shadow mask and shape It is separated at the substrate 601 for having red-light organic luminous material layer；Then, the 5th transfer chamber 220e will form feux rouges organic light emission material The substrate 601 of the bed of material, which is sent to, is bonded chamber 230 with the 5th the interim of transfer chamber 220e connection, this is temporarily bonded in chamber and deposits The substrate 601 and the 5th of red-light organic luminous material layer will be formed in the interim bonding chamber by containing the 5th vapor deposition shadow mask Vapor deposition shadow mask bonds together to form the 5th interim pairing unit；Then, pass through the 5th transfer chamber 220e and the 5th cluster operation chamber 5th interim pairing unit is sent in electron transfer layer chamber 210h by 200e, using the 5th vapor deposition shadow mask as exposure mask, passes through steaming Depositing process forms covering blue light organic luminescent material layer 607, green organic luminescence layer 608 and the organic hair of feux rouges on substrate The electron transfer layer 610 on 609 surface of optical material layer；Then, by the 5th cluster operation chamber 200e by the 5th interim bonding units It is sent to cathode layer chamber 210i from electron transfer layer chamber 210h, using the 5th vapor deposition shadow mask as exposure mask, is existed by evaporation process 610 surface of electron transfer layer forms cathode layer 611；Then, pass through the 5th cluster operation chamber 200e and the 6th transfer chamber 230f The 5th interim pairing unit for forming cathode layer 611 is sent to and is bonded chamber 240 with the solution of the 6th transfer chamber 220f connection, Solution bonding is carried out, the 5th vapor deposition shadow mask and the substrate 601 for being formed with cathode layer 611 are separated；Then, the 6th transfer chamber 220f The substrate 601 for forming cathode layer is sent to and is bonded chamber 240 with the 6th the interim of transfer chamber 220f connection, the interim bonding It is stored with the 6th vapor deposition shadow mask in chamber, in the interim bonding chamber, the substrate 601 and the 6th vapor deposition of cathode layer will be formed with Shadow mask bonds together to form the 6th interim pairing unit；It then, will by the 6th transfer chamber 220f and the 6th cluster operation chamber 200f 6th interim pairing unit is sent in coating chamber 210j, using the 6th vapor deposition shadow mask as exposure mask, by evaporation process in base 611 surface of cathode layer on plate 601 forms coating 612；Pass through the 6th cluster operation chamber 200f and the 7th transfer chamber 220g The 6th interim pairing unit for being formed with coating 612 is sent to and is bonded chamber with the solution of the 7th transfer chamber 220g connection In 240, solution bonding is carried out, the 6th vapor deposition shadow mask and the substrate 601 for being formed with coating 612 are separated；Pass through the 7th transmission cavity Room 220g sends out the substrate 601 for being formed with coating 612.

It should be noted that in other embodiments, after forming cathode layer 611, will can directly form cathode layer 611 The 5th interim pairing unit be sent in coating chamber 210j, using the 5th vapor deposition shadow mask as exposure mask, existed by evaporation process 611 surface of cathode layer on substrate 601 forms coating 612.

It is thus aforementioned when making oled panel using oled panel manufacturing system of the invention, form two layers of organic material layer Need to only carry out side contraposition and bonding technology (for example form p-type doping hole transmission layer 602 and when public hole transmission layer 603, When forming blue light microcavity adjustment layer 604 and blue light organic luminescent material layer 607, forming green light microcavity adjustment layer 605 and green light has When machine luminous material layer 608；When forming feux rouges microcavity adjustment layer 606 and red-light organic luminous material layer 609), greatly save Time of technique.

Figure 18 is please referred to, another embodiment of the present invention additionally provides a kind of structure of oled panel, the oled panel packet Include: substrate 601,601 surface of substrate have transparency conducting layer (material of transparency conducting layer is ITO)；On substrate 601 P-type adulterate hole transmission layer 602；Public hole transmission layer 603 positioned at p-type doping 602 surface of hole transmission layer；Positioned at public affairs The blue light organic luminescent material layer 607 of 603 part of the surface of hole transmission layer altogether；Positioned at 607 side of blue light organic luminescent material layer 603 part of the surface of public hole transmission layer green light microcavity adjustment layer 605；Public affairs positioned at 605 side of green light microcavity adjustment layer The feux rouges microcavity adjustment layer 606 of 603 part of the surface of hole transmission layer altogether, it is micro- that the thickness of green light microcavity adjustment layer 605 is less than feux rouges The thickness of intonation flood 606 improves the display effect of oled panel to match the wavelength of different blue and green lights and feux rouges；It is located at The green organic luminescence layer 608 on 605 surface of green light microcavity adjustment layer；Feux rouges positioned at 606 surface of feux rouges microcavity adjustment layer Organic light emitting material 609；Cover blue light organic luminescent material layer 607, green organic luminescence layer 608, the organic hair of feux rouges The electron transfer layer 610 of optical material layer 609；Cathode 611 on electron transfer layer 610；Covering on cathode 611 Layer.

The structural schematic diagram of one RGB luminescence unit of oled panel is illustrated only in Figure 18, in practice one piece of face OLED There are many RGB luminescence units as shown in figure 18 in plate, and in oled panel manufacturing process, multiple RGB luminescence units It makes simultaneously.

Figure 19 is to make oled panel shown in Figure 17 using the oled panel manufacturing system in one embodiment of the invention Structural schematic diagram, the arrow in Figure 18 with dotted line indicate movement line of the substrate in oled panel manufacturing system.

In conjunction with reference Figure 18 and Figure 19, manufacturing process include: the substrate 601 by the first transfer chamber 220a transmit into With interim being bonded in chamber 230 of the first transfer chamber 220a connection, this, which is temporarily bonded in chamber, is stored with the first vapor deposition shadow mask, In the interim bonding chamber, the substrate 601 and the first vapor deposition shadow mask bond together to form the first interim pairing unit；Then, lead to It crosses the first transfer chamber 220a and the first cluster operation chamber 200a and the first interim pairing unit is sent to p-type doping hole transport In layer chamber 210a, using the first vapor deposition shadow mask as exposure mask, p-type is formed on 601 surface of substrate by evaporation process and adulterates hole biography Defeated layer 602；Then, the first interim bonding units are adulterated from p-type by hole transmission layer chamber by the first cluster operation chamber 200a 210a is sent to the public hole transmission layer chamber 210b connecting with the first cluster operation chamber 200a, is to cover with the first vapor deposition shadow mask Film adulterates 602 surface of hole transmission layer in p-type by evaporation process and forms the public hole transmission layer of first layer；Then, pass through Cluster operation chamber 200a, the second transfer chamber 220b and the second cluster operation chamber 200b will be formed with the public hole of first layer and pass The interim pairing unit of the first of defeated layer is sent to the public hole transmission layer chamber 210b connecting with the second cluster operation chamber 200b, Public hole transmission layer forms the public hole transport of the second layer in the public hole transport layer surface of first layer by evaporation process Layer, the public hole transmission layer of first layer and the public hole transmission layer of the second layer constitute public hole transmission layer 603；Then, pass through Second cluster operation chamber 200b and the second transfer chamber 220b will be formed with the public hole transmission layer of the second layer (or public hole pass Defeated layer 603) interim pairing structure transmission as the second transmission unit 220b connection solution bonding chamber 240, carry out solution bonding, First vapor deposition shadow mask is separated with the substrate for being formed with the public hole transmission layer of the second layer；Then, the second transfer chamber 220b will The substrate 601 for being formed with the public hole transmission layer of the second layer, which is sent to, is bonded chamber with the second the interim of transfer chamber 220b connection 230, this, which is temporarily bonded in chamber, is stored with the second vapor deposition shadow mask, public by the second layer is formed in the interim bonding chamber The substrate 601 of hole transmission layer and the second vapor deposition shadow mask bond together to form the second interim pairing unit；Then, pass through the second transmission cavity Second interim pairing unit is sent to blue light organic luminescent material floor chamber 210d by room 220b and the second cluster operation chamber 200b, It is organic in the part of the surface formation blue light of the public hole transmission layer of the second layer by evaporation process using the second vapor deposition shadow mask as exposure mask Luminous material layer 607；Then, the organic hair of blue light will be formed with by the second cluster operation chamber 200a and third transfer chamber 220c The interim pairing unit of the second of optical material layer 607, which is sent to, is bonded chamber 240 with the solution of third transfer chamber 220c connection, carries out Solution bonding separates the second vapor deposition shadow mask and the substrate 601 for being formed with blue light organic luminescent material layer 607；Then, third transmits The substrate 601 for forming blue light organic luminescent material layer 607 is sent to by chamber 220c to be faced with what third transfer chamber 220c was connect Shi Jianhe chamber 230, this be temporarily bonded in chamber be stored with third vapor deposition shadow mask will be formed in the interim bonding chamber Substrate 601 and third the vapor deposition shadow mask of blue light organic luminescent material layer bond together to form the interim pairing unit of third；Then, pass through The interim pairing unit of third is sent to green light microcavity adjustment layer chamber by three transfer chamber 220c and third cluster operation chamber 200c In 210e, using third vapor deposition shadow mask as exposure mask, pass through blue light organic luminescent material layer 607 one of the evaporation process on substrate 601 The part of the surface of the public hole transmission layer 603 of side forms green light microcavity adjustment layer 605；Then, pass through third cluster operation chamber The interim bonding units of third are sent to green organic luminescence layer chamber from green light microcavity adjustment layer chamber 210e by 200c 210f forms green light organic light emission on 605 surface of green light microcavity adjustment layer by evaporation process using third vapor deposition shadow mask as exposure mask Material layer 608；Then, green light organic light emission material will be formed with by third cluster operation chamber 200c and the 4th transfer chamber 220d The interim pairing unit of the third of the bed of material 608, which is sent to, is bonded chamber 240 with the solution of the 4th transfer chamber 220d connection, carries out solution key It closes, third vapor deposition shadow mask and the substrate 601 for being formed with green organic luminescence layer is separated；Then, the 4th transfer chamber The substrate 601 for forming green organic luminescence layer is sent to and is bonded chamber with the 4th the interim of transfer chamber 220d connection by 220d Room 230, this, which is temporarily bonded in chamber, is stored with the 4th vapor deposition shadow mask, organic by green light is formed in the interim bonding chamber The substrate 601 of luminous material layer and the 4th vapor deposition shadow mask bond together to form the 4th interim pairing unit；Then, pass through the 4th transmission cavity 4th interim pairing unit is sent in feux rouges microcavity adjustment layer chamber 210g by room 220d and the 4th cluster operation chamber 200d, with 4th vapor deposition shadow mask is exposure mask, passes through the public sky of green organic luminescence layer 608 side of the evaporation process on substrate 601 The part of the surface of cave transport layer 603 forms feux rouges microcavity adjustment layer 606；Then, by the 4th cluster operation chamber 200d by the 4th Interim bonding units are sent to red-light organic luminous material layer chamber 210f from feux rouges microcavity adjustment layer chamber 210g, steam with the 4th Plating shadow mask is exposure mask, forms red-light organic luminous material layer 609 on 606 surface of feux rouges microcavity adjustment layer by evaporation process；It connects , the be formed with red-light organic luminous material layer the 4th is faced by the 4th cluster operation chamber 200d and the 5th transfer chamber 220e When pairing unit be sent to and be bonded chamber 240 with the solution of the 5th transfer chamber 220e connection, carry out solution bonding, the 4th vapor deposition is shady The substrate 601 for covering and being formed with red-light organic luminous material layer separates；Then, it is organic will to form feux rouges by the 5th transfer chamber 220e The substrate 601 of luminous material layer, which is sent to, is bonded chamber 230 with the 5th the interim of transfer chamber 220e connection, this is temporarily bonded chamber The 5th vapor deposition shadow mask is stored in room will be formed with the substrate 601 of red-light organic luminous material layer in the interim bonding chamber The 5th interim pairing unit is bonded together to form with the 5th vapor deposition shadow mask；Then, it is operated by the 5th transfer chamber 220e and the 5th cluster 5th interim pairing unit is sent in electron transfer layer chamber 210h by chamber 200e, using the 5th vapor deposition shadow mask as exposure mask, is led to Cross that evaporation process forms covering blue light organic luminescent material layer 607 on substrate, green organic luminescence layer 608 and feux rouges have The electron transfer layer 610 on 609 surface of machine luminous material layer；Then, the 5th is temporarily bonded by the 5th cluster operation chamber 200e Unit is sent to cathode layer chamber 210i from electron transfer layer chamber 210h, using the 5th vapor deposition shadow mask as exposure mask, by the way that work is deposited Skill forms cathode layer 611 on 610 surface of electron transfer layer；Then, pass through the 5th cluster operation chamber 200e and the 6th transfer chamber The 5th interim pairing unit for forming cathode layer 611 is sent to and is bonded chamber with the solution of the 6th transfer chamber 220f connection by 230f 240, solution bonding is carried out, the 5th vapor deposition shadow mask and the substrate 601 for being formed with cathode layer 611 are separated；Then, the 6th transfer chamber The substrate 601 for forming cathode layer is sent to and is bonded chamber 240 with the 6th the interim of transfer chamber 220f connection by 220f, this is interim The 6th vapor deposition shadow mask is stored in bonding chamber will be formed with the substrate 601 and the 6th of cathode layer in the interim bonding chamber Vapor deposition shadow mask bonds together to form the 6th interim pairing unit；Then, pass through the 6th transfer chamber 220f and the 6th cluster operation chamber 6th interim pairing unit is sent in coating chamber 210j by 200f, using the 6th vapor deposition shadow mask as exposure mask, by the way that work is deposited Cathode layer 611 surface of the skill on substrate 601 forms coating 612；Pass through the 6th cluster operation chamber 200f and the 7th transmission cavity The 6th interim pairing unit for being formed with coating 612 is sent to and is bonded with the solution of the 7th transfer chamber 220g connection by room 220g In chamber 240, solution bonding is carried out, the 6th vapor deposition shadow mask and the substrate 601 for being formed with coating 612 are separated；It is passed by the 7th Chamber 220g is sent to send out the substrate 601 for being formed with coating 612.

In the present embodiment, by the thicker public hole transmission layer of thickness split into two layers (the public hole transmission layer of first layer and The public hole transmission layer of the second layer) it is grown in the processing chamber 210b being connected with first cluster operation chamber 200a respectively Grown in the processing chamber 210b being connected with second cluster operation chamber 200b, the public hole transmission layer of first layer and The growth time difference of the public hole transmission layer growth time organic material layer in other processing chambers of the second layer is smaller Or it is essentially identical, to reduce the growth of public hole transmission layer to the shadow of the technique pitch time of entire OLED manufacturing system It rings, improves production efficiency.

Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims

1. a kind of oled panel manufacturing system characterized by comprising several cluster operation chambers, several transfer chambers, Ruo Gangong Skill processing chamber housing, several interim bonding chambers, several solutions are bonded chamber, wherein each cluster operation chamber and at least one technique Processing chamber housing connection；

Adjacent cluster operation chamber is connected by transfer chamber；

Each transfer chamber is temporarily bonded chamber and at least one solution bonding chamber connection at least one；

The interim bonding chamber is at least used to store vapor deposition shadow mask, and in vapor deposition shadow mask and transmits the substrate progress into the chamber After contraposition, substrate and vapor deposition shadow mask are bonded together by UV glue, form interim pairing structure；

The transfer chamber is at least used for substrate or interim pairing structure in cluster operation chamber, interim bonding chamber reconciliation bonding It is transmitted between chamber；

The cluster operation chamber is at least used to for interim pairing structure being transmitted between processing chamber, and in technique It is transmitted between processing chamber housing and transfer chamber；

The processing chamber is at least used for when interim pairing structure is sent among processing chamber, temporarily to match Vapor deposition shadow mask in structure is exposure mask, and the substrate surface by being vaporized on vapor deposition shadow mask exposure forms organic material layer；

The solution bonding chamber is transmitted to solution bonding after being at least used to be formed organic material layer on the substrate of interim pairing structure When chamber, by laser irradiation by substrate and vapor deposition shadow mask solution bonding, so that being formed with the substrate of organic material layer and being deposited shady Cover separation.

2. oled panel manufacturing system as described in claim 1, which is characterized in that the interim bonding chamber includes: that contraposition is single Member, the first clamping unit, dispensing unit, UV light irradiation unit and storage unit, wherein the bit cell be used for substrate and It is aligned for shadow mask；First clamping unit for clamp substrate and vapor deposition shadow mask, and substrate and vapor deposition shadow mask into After row contraposition, so that substrate and vapor deposition shadow mask contact fitting；The dispensing unit is used in substrate and vapor deposition shadow mask contact fitting Afterwards, UV glue is shootd out, fills UV glue between substrate and vapor deposition shadow mask；The UV light irradiation unit is for emitting UV light, to substrate Filling UV glue is irradiated between vapor deposition shadow mask, so that UV adhesive curing, substrate and vapor deposition shadow mask are bonded together to be formed and be faced When pairing structure；The storage unit is for storing vapor deposition shadow mask.

3. oled panel manufacturing system as claimed in claim 2, which is characterized in that the substrate includes pixel region and circular picture The cofferdam region in plain region, cofferdam region part of the surface form cofferdam structure；The vapor deposition shadow mask includes: substrate；It is located at Grid film layer in the substrate face, with the opening of several array arrangements in the grid film layer；In the substrate Through the groove of substrate thickness, the groove exposes several openings in grid film layer and the louver film between adjacent apertures Layer.

4. oled panel manufacturing system as claimed in claim 3, which is characterized in that first clamping unit makes on substrate The surface that shadow mask is deposited in cofferdam structure contacts fitting.

5. oled panel manufacturing system as claimed in claim 4, which is characterized in that the dispensing unit is on the outside of cofferdam structure UV glue is filled between substrate and vapor deposition shadow mask.

6. oled panel manufacturing system as claimed in claim 2, which is characterized in that the UV glue that the dispensing unit shoots out is in UV Glue connection reaction occurs when light irradiates, so that substrate is bonded with vapor deposition shadow mask, and in laser irradiation, fuse glue connection molecule, So that substrate and vapor deposition shadow mask carry out the UV glue of solution bonding.

7. oled panel manufacturing system as claimed in claim 2, which is characterized in that the UV light of the UV light irradiation unit transmitting Wavelength is more than or equal to 365nm, and irradiation energy is greater than 1000mj/cm²。

8. oled panel manufacturing system as claimed in claim 2, which is characterized in that the dispensing unit is in substrate and vapor deposition shadow mask Between fill UV glue, first clamping unit be also possible that contact fitting substrate and vapor deposition shadow mask rotation.

9. oled panel manufacturing system as claimed in claim 2, which is characterized in that the solution bonding chamber includes laser irradiation list Member and the second clamping unit, the laser beam irradiation unit are used to emit laser, irradiate the cured UV glue in interim pairing structure, Second clamping unit is used to clamp interim pairing structure, and after the cured UV glue of laser irradiation, so that being formed with organic The substrate of material layer is separated with vapor deposition shadow mask.

10. oled panel manufacturing system as claimed in claim 9, which is characterized in that the laser is picosecond laser, pulse frequency 100-1000KHz。

11. oled panel manufacturing system as described in claim 1, which is characterized in that the technique being connect with each cluster operation chamber Processing chamber housing >=1.

12. oled panel manufacturing system as claimed in claim 11, which is characterized in that the technique being connect with each cluster operation chamber When processing chamber housing >=2, several processing chambers for the processing chamber connecting with each cluster operation chamber are identical Processing chamber or different processing chambers, or at least partly quantity is identical processing chamber, other portions Dosis refracta is other processing chambers.

13. LED panel manufacturing system as claimed in claim 12, which is characterized in that at the technique of different cluster operation chamber connections Managing chamber is at identical processing chamber or different processing chambers, or the technique of different cluster operation chamber connections Managing at least partially is identical processing chamber in chamber.

14. oled panel manufacturing system as claimed in claim 12, which is characterized in that when certain cluster operation chamber is target cluster behaviour When making chamber, the transfer chamber connecting with the target cluster operation chamber front end is front end transfer chamber, is grasped with the target cluster Make chamber rear end connection transfer chamber be rear end transfer chamber, the substrate and be deposited shadow mask with the front end transfer chamber Interim pairing structure is formed in the interim bonding chamber of connection, and is transmitted interim pairing structure by the front end transfer chamber To the target cluster operation chamber；Interim pairing structure is transmitted to corresponding process chamber by the target cluster operation chamber Room；In processing chamber, organic material layer is formed on substrate；Rear end transfer chamber will be formed with facing for organic material layer When bonding units from target cluster operation chamber be transmitted to rear end transfer chamber connect solution be bonded chamber, solution bonding chamber In, so that the substrate for being formed with organic material layer is separated with vapor deposition shadow mask.

15. oled panel manufacturing system as claimed in claim 14, which is characterized in that if when being connected with target cluster operation chamber When dry processing chamber is identical processing chamber, interim it is bonded in chamber with what the front end transfer chamber connected Sequentially form several interim pairing structures, by several interim pairing structures by front end transfer chamber and target cluster operation chamber according to It is secondary to be transmitted in several processing chambers being connected with target cluster operation chamber, in the substrate surface of several interim pairing structures It is corresponding to form organic material layer.

16. oled panel manufacturing system as claimed in claim 14, which is characterized in that if when being connected with target cluster operation chamber When dry processing chamber is two different processing chambers, interim chamber is being bonded with what the front end transfer chamber connected Interim pairing structure is formed in room, first transmits the interim pairing structure by front end transfer chamber and target cluster operation chamber Into a processing chamber being connected with target cluster operation chamber, shadow mask is deposited as exposure mask, in the interim pairing knot The substrate surface of structure forms the first organic material layer, and the interim pairing structure for being formed with the first organic material layer is then passed through mesh Mark cluster operation chamber is transmitted in another processing chamber being connected with target cluster operation chamber, is with identical vapor deposition shadow mask Exposure mask forms the second organic material layer in the first organic material layer of substrate.

17. oled panel manufacturing system as claimed in claim 13, which is characterized in that the cluster operation chamber includes successively adjacent The first cluster operation chamber, the second cluster operation chamber, third cluster operation chamber, the 4th cluster operation chamber, the 5th cluster operation chamber, 6th cluster operation chamber, the transfer chamber include the first transfer chamber, the second transfer chamber, third transfer chamber, the 4th biography Chamber, the 5th transfer chamber, the 6th transfer chamber, the 7th transfer chamber are sent, the first transfer chamber and the first cluster operation chamber connect It connects, the second transfer chamber connects the first cluster operation chamber with the second cluster operation chamber, and third transfer chamber operates the second cluster Chamber is connected with third cluster operation chamber, and the 4th transfer chamber connects third cluster operation chamber with the 4th cluster operation chamber, the Five transfer chambers connect the 4th cluster operation chamber with the 5th cluster operation chamber, the 6th transfer chamber by the 5th cluster operation chamber and The connection of 6th cluster operation chamber, the 7th transfer chamber are connect with the 6th cluster operation chamber；Each of between adjacent cluster operation chamber Transfer chamber is temporarily bonded chamber and at least one solution bonding chamber connection at least one；Each cluster operation chamber and at least one A processing chamber connection.

18. oled panel manufacturing system as claimed in claim 14, which is characterized in that described to connect with the first cluster operation chamber Processing chamber includes that at least one p-type adulterates hole transmission layer chamber and at least one public hole transmission layer chamber, with The processing chamber of second cluster operation chamber connection includes at least one blue light microcavity adjustment layer chamber and at least one blue light Organic light emitting material chamber, the processing chamber connecting with third cluster operation chamber include the adjustment of at least one green light microcavity Layer chamber and at least one green organic luminescence layer chamber, the processing chamber connecting with the 4th cluster operation chamber include At least one feux rouges microcavity adjustment layer chamber and at least one red-light organic luminous material layer chamber connect with the 5th cluster operation chamber The processing chamber connect includes at least one electron transfer layer chamber and at least one cathode layer chamber, with the 6th cluster operating cavity The processing chamber of room connection includes at least one coating chamber.

19. oled panel manufacturing system as claimed in claim 18, which is characterized in that the substrate is passed by the first transfer chamber Be sent into the first transfer chamber connect it is interim be bonded in chamber, this, which is temporarily bonded in chamber, is stored with the first vapor deposition shadow mask, In the interim bonding chamber, the substrate and the first vapor deposition shadow mask bond together to form the first interim pairing unit；Then, pass through first First interim pairing unit is sent in p-type doping hole transmission layer chamber by transfer chamber and the first cluster operation chamber, is passed through Evaporation process forms p-type in substrate surface and adulterates hole transmission layer；Then, first is temporarily bonded by the first cluster operation chamber Unit is sent to public hole transmission layer chamber from p-type doping hole transmission layer chamber, adulterates hole in p-type by evaporation process Transmission layer surface is formed with public hole transmission layer；Then, it will be formed with by the first cluster operation chamber and the second transfer chamber The interim pairing unit of the first of public hole transmission layer, which is sent to, is bonded chamber with the solution of the second transfer chamber connection, carries out solution key It closes, the first vapor deposition shadow mask is separated with the substrate for being formed with public hole transmission layer；Then, the second transfer chamber will be formed with public affairs The substrate of hole transmission layer, which is sent to, altogether is bonded chamber with the interim of the second transfer chamber connection, this is temporarily bonded in chamber and stores There is the second vapor deposition shadow mask, in the interim bonding chamber, the substrate and the second vapor deposition shadow mask of public hole transmission layer will be formed with Bond together to form the second interim pairing unit；Then, second is temporarily matched by the second transfer chamber and the second cluster operation chamber Unit is sent in blue light microcavity adjustment layer chamber, passes through the part of the surface of public hole transmission layer of the evaporation process on substrate Form blue light microcavity adjustment layer；Then, by the second cluster operation chamber by the second interim bonding units from blue light microcavity adjustment layer Chamber is sent to blue light organic luminescent material layer chamber, organic in blue light microcavity adjustment layer surface formation blue light by evaporation process Luminous material layer；Then, blue light organic luminescent material layer will be formed with by the second cluster operation chamber and third transfer chamber Second interim pairing unit, which is sent to, is bonded chamber with the solution of third transfer chamber connection, carries out solution bonding, and the second vapor deposition is shady Cover and be formed with the substrate separation of blue light organic luminescent material layer；Then, third transfer chamber will form blue light organic emissive material The substrate of the bed of material, which is sent to, is bonded chamber with the interim of third transfer chamber connection, this, which is temporarily bonded in chamber, is stored with third steaming Shadow mask is plated, in the interim bonding chamber, the substrate for being formed with blue light organic luminescent material layer is bonded with third vapor deposition shadow mask Form the interim pairing unit of third；Then, by third transfer chamber and third cluster operation chamber by the interim pairing unit of third It is sent in green light microcavity adjustment layer chamber, passes through the public of blue light organic luminescent material layer side of the evaporation process on substrate The part of the surface of hole transmission layer forms green light microcavity adjustment layer；Then, third is temporarily bonded by third cluster operation chamber Unit is sent to green organic luminescence layer chamber from green light microcavity adjustment layer chamber, by evaporation process in green light microcavity tune Flood surface forms green organic luminescence layer；Then, it will be formed with by third cluster operation chamber and the 4th transfer chamber The interim pairing unit of the third of green organic luminescence layer, which is sent to, is bonded chamber with the solution of the 4th transfer chamber connection, carries out Solution bonding separates third vapor deposition shadow mask with the substrate for being formed with green organic luminescence layer；Then, the 4th transfer chamber will The substrate for forming green organic luminescence layer, which is sent to, is bonded chamber with the interim of the 4th transfer chamber connection, the interim bonding The 4th vapor deposition shadow mask is stored in chamber will be formed with the substrate of green organic luminescence layer in the interim bonding chamber The 4th interim pairing unit is bonded together to form with the 4th vapor deposition shadow mask；Then, pass through the 4th transfer chamber and the 4th cluster operation chamber 4th interim pairing unit is sent in feux rouges microcavity adjustment layer chamber, the organic hair of green light of the evaporation process on substrate is passed through The part of the surface of the public hole transmission layer of optical material layer side forms feux rouges microcavity adjustment layer；Then, it is operated by the 4th cluster 4th interim bonding units are sent to red-light organic luminous material layer chamber from feux rouges microcavity adjustment layer chamber by chamber, pass through steaming Depositing process forms red-light organic luminous material layer in feux rouges microcavity adjustment layer surface；Then, pass through the 4th cluster operation chamber and The 4th interim pairing unit for being formed with red-light organic luminous material layer is sent to by five transfer chambers to be connected with the 5th transfer chamber The solution bonding chamber connect, carries out solution bonding, and the 4th vapor deposition shadow mask is separated with the substrate for being formed with red-light organic luminous material layer； Then, the 5th transfer chamber by formed red-light organic luminous material layer substrate be sent to connect with the 5th transfer chamber it is interim It is bonded chamber, this, which is temporarily bonded in chamber, is stored with the 5th vapor deposition shadow mask, and in the interim bonding chamber, will be formed with feux rouges has The substrate of machine luminous material layer and the 5th vapor deposition shadow mask bond together to form the 5th interim pairing unit；Then, pass through the 5th transmission cavity 5th interim pairing unit is sent in electron transfer layer chamber by room and the 5th cluster operation chamber, by evaporation process in substrate The upper electronics for forming covering blue light organic luminescent material layer, green organic luminescence layer and red-light organic luminous material layer surface Transport layer；Then, the 5th interim bonding units are sent to from electron transfer layer chamber by cathode layer by the 5th cluster operation chamber Chamber forms cathode layer in electron-transport layer surface by evaporation process；Then, it is transmitted by the 5th cluster operation chamber and the 6th The 5th interim pairing unit for forming cathode layer is sent to and is bonded chamber with the solution of the 6th transfer chamber connection by chamber, is solved Bonding separates the 5th vapor deposition shadow mask with the substrate for being formed with cathode layer；Then, the 6th transfer chamber will form the base of cathode layer Plate, which is sent to, is bonded chamber with the interim of the 6th transfer chamber connection, this, which is temporarily bonded in chamber, is stored with the 6th vapor deposition shadow mask, In the interim bonding chamber, it is single that the substrate for being formed with cathode layer and the 6th vapor deposition shadow mask are bonded together to form into the 6th interim pairing Member；Then, the 6th interim pairing unit is sent in coating chamber by the 6th transfer chamber and the 6th cluster operation chamber, Coating is formed by cathode layer surface of the evaporation process on substrate.

20. oled panel manufacturing system as claimed in claim 14, which is characterized in that described to connect with the first cluster operation chamber Processing chamber includes that at least one p-type adulterates hole transmission layer chamber and at least one public hole transmission layer chamber, with The processing chamber of second cluster operation chamber connection includes at least one public hole transmission layer chamber and at least one blue light Organic light emitting material chamber, the processing chamber connecting with third cluster operation chamber include the adjustment of at least one green light microcavity Layer chamber and at least one green organic luminescence layer chamber, the processing chamber connecting with the 4th cluster operation chamber include At least one feux rouges microcavity adjustment layer chamber and at least one red-light organic luminous material layer chamber connect with the 5th cluster operation chamber The processing chamber connect includes at least one electron transfer layer chamber and at least one cathode layer chamber, with the 6th cluster operating cavity The processing chamber of room connection includes at least one coating chamber.

21. oled panel manufacturing system as claimed in claim 18, which is characterized in that the substrate is passed by the first transfer chamber Be sent into the first transfer chamber connect it is interim be bonded in chamber, this, which is temporarily bonded in chamber, is stored with the first vapor deposition shadow mask, In the interim bonding chamber, the substrate and the first vapor deposition shadow mask bond together to form the first interim pairing unit；Then, pass through first First interim pairing unit is sent in p-type doping hole transmission layer chamber by transfer chamber and the first cluster operation chamber, is passed through Evaporation process forms p-type in substrate surface and adulterates hole transmission layer；Then, first is temporarily bonded by the first cluster operation chamber Unit is sent to the public hole transmission layer chamber connecting with the first cluster operation chamber from p-type doping hole transmission layer chamber, leads to It crosses evaporation process and forms the public hole transmission layer of first layer in p-type doping hole transport layer surface；Then, it is operated by the first cluster Chamber, the second transfer chamber and the second cluster operation chamber are single by the first interim pairing for being formed with the public hole transmission layer of first layer Member is sent to the public hole transmission layer chamber connecting with the second cluster operation chamber, by evaporation process in the public hole of first layer It transmits layer surface and forms the public hole transmission layer of the second layer, the public hole transmission layer of first layer and the public hole transmission layer of the second layer Constitute hole transmission layer；Then, the public hole of the second layer will be formed with by the second cluster operation chamber and the second transfer chamber to pass The interim pairing structure transmission of defeated layer is bonded chamber as the solution that the second transmission unit connects, and carries out solution bonding, by the first vapor deposition Shadow mask is separated with the substrate for being formed with the public hole transmission layer of the second layer；Then, the second transfer chamber will be formed with second layer public affairs The substrate of hole transmission layer, which is sent to, altogether is bonded chamber with the interim of the second transfer chamber connection, this is temporarily bonded in chamber and stores There is the second vapor deposition shadow mask, in the interim bonding chamber, the substrate for being formed with the public hole transmission layer of the second layer and second are steamed Plating shadow mask bonds together to form the second interim pairing unit；Then, second is faced by the second transfer chamber and the second cluster operation chamber When pairing unit be sent to blue light organic luminescent material layer chamber, by evaporation process in the portion of the public hole transmission layer of the second layer Surface is divided to form blue light organic luminescent material layer；Then, indigo plant will be formed with by the second cluster operation chamber and third transfer chamber The interim pairing unit of the second of light organic light emitting material, which is sent to, is bonded chamber with the solution of third transfer chamber connection, is solved Bonding separates the second vapor deposition shadow mask with the substrate for being formed with blue light organic luminescent material layer；Then, third transfer chamber is by shape It is sent at the substrate of blue light organic luminescent material layer and is bonded chamber with the interim of third transfer chamber connection, this is temporarily bonded chamber Third vapor deposition shadow mask is stored in room, in the interim bonding chamber, will be formed with the substrate of blue light organic luminescent material layer with Third vapor deposition shadow mask bonds together to form the interim pairing unit of third；It then, will by third transfer chamber and third cluster operation chamber The interim pairing unit of third is sent in green light microcavity adjustment layer chamber, passes through blue light organic emissive of the evaporation process on substrate The public hole transport layer surface of the portion of second layer of material layer side forms green light microcavity adjustment layer；Then, it is grasped by third cluster Make chamber and the interim bonding units of third are sent to green organic luminescence layer chamber from green light microcavity adjustment layer chamber, passes through Evaporation process forms green organic luminescence layer in green light microcavity adjustment layer surface；Then, by third cluster operation chamber and The interim pairing unit of the third for being formed with green organic luminescence layer is sent to and the 4th transfer chamber by the 4th transfer chamber The solution of connection is bonded chamber, carries out solution bonding, and third vapor deposition shadow mask and the substrate for being formed with green organic luminescence layer are divided From；Then, the substrate for forming green organic luminescence layer is sent to and connect with the 4th transfer chamber by the 4th transfer chamber Interim bonding chamber, this temporarily be bonded in chamber to be stored with the 4th shadow mask is deposited and will be formed with green in the interim bonding chamber The substrate of light organic light emitting material and the 4th vapor deposition shadow mask bond together to form the 4th interim pairing unit；Then, it is passed by the 4th Send chamber and the 4th cluster operation chamber that the 4th interim pairing unit is sent in feux rouges microcavity adjustment layer chamber, by the way that work is deposited The public hole transport layer surface of the portion of second layer of green organic luminescence layer side of the skill on substrate forms feux rouges microcavity Adjustment layer；Then, the 4th interim bonding units are sent to from feux rouges microcavity adjustment layer chamber by the 4th cluster operation chamber red Light organic light emitting material chamber adjusts layer surface in feux rouges microcavity by evaporation process and forms red-light organic luminous material layer； Then, the 4th interim pairing that red-light organic luminous material layer will be formed with by the 4th cluster operation chamber and the 5th transfer chamber Unit, which is sent to, is bonded chamber with the solution of the 5th transfer chamber connection, carries out solution bonding, by the 4th vapor deposition shadow mask and is formed with red The substrate of light organic light emitting material separates；Then, the 5th transfer chamber passes the substrate for forming red-light organic luminous material layer Send to the 5th transfer chamber connect it is interim be bonded chamber, this be temporarily bonded in chamber is stored with the 5th vapor deposition shadow mask, at this In interim bonding chamber, it is interim that the substrate for being formed with red-light organic luminous material layer and the 5th vapor deposition shadow mask are bonded together to form the 5th Pairing unit；Then, the 5th interim pairing unit electronics is sent to by the 5th transfer chamber and the 5th cluster operation chamber to pass In defeated layer chamber, covering blue light organic luminescent material layer, green organic luminescence layer are formed on substrate by evaporation process With the electron transfer layer of red-light organic luminous material layer surface；Then, by the 5th cluster operation chamber that the 5th interim bonding is single Member is sent to cathode layer chamber from electron transfer layer chamber, forms cathode layer in electron-transport layer surface by evaporation process；It connects , the 5th interim pairing unit for forming cathode layer is sent to and the 6th by the 5th cluster operation chamber and the 6th transfer chamber The solution of transfer chamber connection is bonded chamber, carries out solution bonding, and the 5th vapor deposition shadow mask is separated with the substrate for being formed with cathode layer；It connects , the substrate for forming cathode layer is sent to and is bonded chamber with the interim of the 6th transfer chamber connection by the 6th transfer chamber, this faces The 6th vapor deposition shadow mask is stored in Shi Jianhe chamber will be formed with the substrate and the 6th of cathode layer in the interim bonding chamber Vapor deposition shadow mask bonds together to form the 6th interim pairing unit；Then, by the 6th transfer chamber and the 6th cluster operation chamber by the 6th Interim pairing unit is sent in coating chamber, forms coating by cathode layer surface of the evaporation process on substrate.

22. oled panel manufacturing system as described in claim 1, which is characterized in that the contraposition of several interim bonding chambers Precision is consistent.

23. a kind of oled panel manufacturing system characterized by comprising a cluster operation chamber, several transfer chambers are several Processing chamber, several interim bonding chambers, several solutions are bonded chamber, wherein the cluster operation chamber and at least one work The connection of skill processing chamber housing；

The leading portion of the cluster operation chamber and rear end are at least connected with a transfer chamber respectively；

Chamber connection is temporarily bonded at least one with the transfer chamber of cluster operation chamber front end connection, with cluster operation chamber rear end The transfer chamber of connection is bonded chamber connection at least one solution；

After the solution bonding chamber is at least used on the substrate of interim pairing structure form organic material layer, it is transmitted to solution bonding When chamber, by laser irradiation by substrate and vapor deposition shadow mask solution bonding, so that being formed with the substrate of organic material layer and being deposited shady Cover separation.

24. oled panel manufacturing system as claimed in claim 23, which is characterized in that several processing chambers are identical Processing chamber, cluster operation chamber front-end and back-end are separately connected a transfer chamber, and the transfer chamber of front end at least connects An interim bonding chamber is connect, the transfer chamber of rear end is at least connected with a solution bonding chamber.

25. oled panel manufacturing system as claimed in claim 23, which is characterized in that several processing chambers are identical Processing chamber, the transfer chamber of front end connects at least one solution other than being at least connected with an interim bonding chamber It is bonded chamber, the transfer chamber of the rear end connects at least one ephemeral key other than being at least connected with a solution bonding chamber Close chamber.

26. oled panel manufacturing system as claimed in claim 23, which is characterized in that several processing chambers at least wrap Different two kinds of processing chambers are included, the transfer chamber of front end is at least connected with an interim bonding chamber, the transmission of rear end Chamber is at least connected with a solution bonding chamber.

27. oled panel manufacturing system as claimed in claim 23, which is characterized in that several processing chambers include not Identical two kinds of processing chambers, the transfer chamber of front end are connected to other than being at least connected with an interim bonding chamber A few solution is bonded chamber, and the transfer chamber of the rear end connects at least one other than being at least connected with a solution bonding chamber A interim bonding chamber.

28. a kind of device for being used to form interim pairing unit characterized by comprising

Interim bonding chamber, the interim bonding chamber is at least used to store vapor deposition shadow mask, and in vapor deposition shadow mask and transmits into this After the substrate of chamber is aligned, substrate and vapor deposition shadow mask are bonded together by UV glue, form interim pairing structure.

29. being used to form the device of interim pairing unit as claimed in claim 28, which is characterized in that the interim bonding chamber It include: bit cell, the first clamping unit, dispensing unit, UV light irradiation unit and storage unit, wherein the bit cell is used It is aligned in by substrate and for shadow mask；First clamping unit for clamping substrate and vapor deposition shadow mask, and in substrate and After vapor deposition shadow mask is aligned, so that substrate and vapor deposition shadow mask contact fitting；The dispensing unit is used for shady in substrate and vapor deposition After cover contact fitting, UV glue is shootd out, fills UV glue between substrate and vapor deposition shadow mask；The UV light irradiation unit is for emitting UV Light is irradiated filling UV glue between substrate and vapor deposition shadow mask, so that UV adhesive curing, is bonded in one for substrate and vapor deposition shadow mask It rises and forms interim pairing structure；The storage unit is for storing vapor deposition shadow mask.

30. being used to form the device of interim pairing unit as claimed in claim 29, which is characterized in that the dispensing unit shoots out UV glue be that glue connection reaction occurs in the irradiation of UV light it is molten and in laser irradiation so that substrate is bonded with vapor deposition shadow mask Disconnected glue connection molecule, so that substrate and vapor deposition shadow mask carry out the UV glue of solution bonding.

31. being used to form the device of interim pairing unit as claimed in claim 30, which is characterized in that the UV light irradiation unit The wavelength of the UV light of transmitting is more than or equal to 365nm, and irradiation energy is greater than 1000mj/cm²。