CN110047956B - 具有挡光层的非等平面AlGaN基肖特基型紫外探测器及其制备方法 - Google Patents
具有挡光层的非等平面AlGaN基肖特基型紫外探测器及其制备方法 Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 45
- 230000000903 blocking effect Effects 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title description 6
- 238000010521 absorption reaction Methods 0.000 claims abstract description 28
- 230000007704 transition Effects 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000001883 metal evaporation Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 201000004569 Blindness Diseases 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008506 pathogenesis Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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Abstract
本发明公开了一种具有挡光层的非等平面AlGaN基肖特基型紫外探测器，包括依次设置的蓝宝石衬底、缓冲层、阻挡层、掺杂层、过渡层，过渡层上设有吸收层，在吸收层上刻蚀出双台面结构，在吸收层及双台面结构上沉积钝化层，在钝化层上开窗口，窗口处设置欧姆接触层、肖特基接触层，在器件表面依次设置绝缘层a、挡光层和绝缘层b，并且开孔使欧姆接触层和肖特基接触层露出。并公开了其制备方法。本发明在缓冲层上沉积AlGaN层作为阻挡层，实现器件对具体波长范围为250‑280nm的光信号的响应；在阻挡层上沉积一层过渡层，降低了器件体内的晶格失配，可以减小器件暗电流；在器件最上层设计绝缘层a/挡光层/绝缘层b的结构，可提高器件的响应度。
Description
技术领域
本发明涉及一种具有挡光层的非等平面AlGaN基肖特基型紫外探测器及其制备方法，属于半导体紫外探测领域。
背景技术
近年来，紫外探测器在军事和民用领域得到了越来越广泛的应用。在军事上，紫外探测技术可以应用于机密军事情报的传递、导弹监测和预警以及在现代生化武器战争中对生化试剂的检测等领域中。在民用上，紫外探测技术可以应用于对森林重大火灾的监测、对生物医学中疾病病发原理的研究以及公安机关的侦查破案等领域中。而AlGaN材料作为直接宽禁带半导体，且其禁带宽度对应的波长范围为200-365nm，因此AlGaN材料在制备紫外探测器中具有很大的优势。
半导体紫外探测器主要可分为光电导探测器和光伏探测器，肖特基型紫外探测器是光伏探测器的一种。AlGaN基肖特基型紫外探测器虽然具有本征日盲、响应快和抗辐射能力强等优点，但在对微弱信号的探测上有很大的局限性，一方面是器件体内因Al组分相差较大产生了晶格失配和较多的缺陷，导致器件的暗电流较大，另一方面是由于器件响应度的限制。
发明内容
本发明提供了一种具有挡光层的非等平面AlGaN基肖特基型紫外探测器及其制备方法，目的是针对现有技术的不足，实现更低的暗电流和对具体信号范围的更高的响应度。
本发明的目的通过以下技术方案实现：
一种具有挡光层的非等平面AlGaN基肖特基型紫外探测器，包括依次设置的蓝宝石衬底、缓冲层、阻挡层、掺杂层、过渡层，在过渡层上设有吸收层，在吸收层上刻蚀出双台面结构，在吸收层及双台面结构上沉积钝化层，在钝化层上开窗口，在深至掺杂层的窗口处设置欧姆接触层，在吸收层的窗口处设置肖特基接触层，在器件表面依次设置绝缘层a、挡光层和绝缘层b，并且开孔使欧姆接触层和肖特基接触层露出。
优选的，所述缓冲层为非故意掺杂AlN，厚度为1000nm，用以降低AlGaN与衬底之间的晶格失配，减小暗电流。
优选的，所述阻挡层为Al组分为0.55的n型AlGaN，厚度为1000nm，用以吸收波长低于250nm的光信号。
优选的，所述掺杂层为Al组分为0.52的n型AlGaN，厚度为800nm。
优选的，所述过渡层为n型AlGaN，厚度为30nm，该层Al组分在0.42-0.52之间逐渐变化，靠近掺杂层端的Al组分为0.52，靠近吸收层端的Al组分为0.42，中间部分的Al组分逐渐变化，用以降低Al组分相差较大的AlGaN材料之间的晶格失配，减小暗电流。
优选的，所述吸收层为Al组分为0.42的非故意掺杂AlGaN，厚度为250nm。
优选的，所述欧姆接触层为钛/铝/镍/金，厚度为30/150/50/100nm。
优选的，所述肖特基接触层为镍/金，厚度为20/100nm。
优选的，所述钝化层为二氧化硅，厚度为200nm，用以防止器件表面AlGaN的氧化和修饰表面缺陷，减小暗电流。
优选的，所述绝缘层a为环氧树脂，厚度为1600-2000nm；所述挡光层为金属铝，厚度为500nm；所述绝缘层b为环氧树脂，厚度为3000nm。挡光层用以反射背入射光信号，提高器件对光信号的吸收，获取更高的器件响应度。
本发明还提供了上述的具有挡光层的非等平面AlGaN基肖特基型紫外探测器的制备方法，其步骤包括：
(1)通过金属有机化合物化学气相沉积技术在蓝宝石衬底上沉积缓冲层；
(2)在缓冲层上沉积阻挡层；
(3)在阻挡层上沉积掺杂层；
(4)在掺杂层上沉积AlGaN薄膜，在AlGaN薄膜上通过多次注入不同能量和剂量的Al离子，获得过渡层；
(5)在过渡层上沉积吸收层；
(6)通过感应耦合等离子技术在吸收层上刻蚀出高度为280nm的双台面结构；
(7)通过等离子增强化学气相沉积技术在器件表面沉积钝化层，并进行开窗口，留出蒸镀金属的地方；
(8)通过电子束蒸发技术在掺杂层上蒸镀欧姆接触层；
(9)在吸收层上蒸镀肖特基接触层；
(10)在器件表面涂绝缘层a，开孔并固化；在绝缘层a蒸镀挡光层；在器件表面涂绝缘层b，开孔并固化。
本发明的有益效果如下：
(1)在缓冲层上沉积了1000nm厚度的Al组分为0.55的AlGaN作为阻挡层，用以吸收波长小于250nm的光信号，从而实现了器件对具体波长范围为250-280nm的光信号的响应；
(2)在阻挡层上沉积了一层过渡层，降低器件体内由于Al组分相差较大导致的不同AlGaN外延层间的晶格失配，从而减小器件暗电流，降低器件的背景噪声，提高器件探测的准确性；
(3)在器件最上层设计了绝缘层a/挡光层/绝缘层b的挡光层结构，可以将透过器件的入射光反射回去，使器件对其进行二次吸收，从而提高器件的响应度。
附图说明
图1是本发明器件的结构示意图。
图中：1-蓝宝石衬底，2-缓冲层，3-阻挡层，4-掺杂层，5-过渡层，6-吸收层，7-欧姆接触层，8-肖特基接触层，9-钝化层，10-绝缘层a，11-挡光层，12-绝缘层b。
图2是本发明器件的制备流程图。
具体实施方式
实施例1
一种具有挡光层的非等平面AlGaN基肖特基型紫外探测器，包括：蓝宝石衬底1、缓冲层2、阻挡层3、掺杂层4、过渡层5、吸收层6、欧姆接触层7、肖特基接触层8、钝化层9、绝缘层a10、挡光层11和绝缘层b12。所述蓝宝石衬底位于整个器件最底部；所述缓冲层为1000nm的非故意掺杂AlN，用以降低AlGaN与衬底之间的晶格失配，减小暗电流，位于蓝宝石衬底之上；所述阻挡层为1000nm的Al组分为0.55的n型AlGaN，用以吸收波长低于250nm的光信号，位于缓冲层之上；所述掺杂层为800nm的Al组分为0.52的n型AlGaN，位于阻挡层之上；所述过渡层为30nm的n型AlGaN，Al组分在0.42-0.52之间连续变化，靠近掺杂层的Al组分为0.52，靠近吸收层的Al组分为0.42，中间部分的Al组分逐渐变化，用以降低Al组分相差较大的AlGaN材料之间的晶格失配，减小暗电流，位于掺杂层之上；所述吸收层为250nm的Al组分为0.42的AlGaN，用以探测波长低于280nm的光信号，位于过渡层之上；所述吸收层经过刻蚀，形成双台面结构，刻蚀深度至掺杂层，所述欧姆接触层为30/150/50/100nm的钛/铝/镍/金，用以制备欧姆接触电极，位于掺杂层与绝缘层a之间；所述肖特基接触层为20/100nm的镍/金，用以制备肖特基接触电极，位于吸收层与绝缘层a之间；所述钝化层为200nm的二氧化硅，用以防止表面氧化和修饰表面缺陷，减小暗电流，位于掺杂层与绝缘层a之间和吸收层与绝缘层a之间；所述绝缘层a为1600-2000nm的环氧树脂，位于欧姆接触层、肖特基接触层和钝化层之上；所述挡光层为500nm的金属铝，用以反射背入射光信号，提高器件对光信号的吸收，获取更高的器件响应度，位于绝缘层a之上；所述绝缘层b为3000nm的环氧树脂，位于挡光层之上。
实施例2
具有挡光层的非等平面AlGaN基肖特基型紫外探测器的制备方法，其步骤包括：
(1)通过金属有机化合物化学气相沉积技术在蓝宝石衬底1上沉积缓冲层2；
(2)在缓冲层2上沉积阻挡层3；
(3)在阻挡层3上沉积掺杂层4；
(4)在掺杂层4上沉积n型AlGaN薄膜，厚度为30nm，向n型AlGaN薄膜中多次注入不同能量和剂量的Al离子，注入次数为4至8次，注入能量为8keV至80keV，注入剂量为2.5×1013ions/cm2至1.5×1014ions/cm2，获得过渡层5；
(5)在过渡层5上沉积吸收层6；
(6)通过感应耦合等离子技术在吸收层6上刻蚀出高度为280nm的双台面结构；
(7)通过等离子增强化学气相沉积技术在器件表面沉积钝化层9，并进行开窗口，留出蒸镀金属的地方；
(8)通过电子束蒸发技术在掺杂层4上蒸镀钛/铝/镍/金，厚度为30/150/50/100nm，将器件置于充满氮气氛围的快速热退火炉中，在850℃的温度下退火30s，获得欧姆接触层7；
(9)在吸收层6上蒸镀肖特基接触层8；
(10)在器件表面涂绝缘层a10，开孔并固化；在绝缘层a10蒸镀挡光层11；在器件表面涂绝缘层b12，开孔并固化。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (5)
1.一种具有挡光层的非等平面AlGaN基肖特基型紫外探测器，包括依次设置的蓝宝石衬底(1)、缓冲层(2)、阻挡层(3)、掺杂层(4)、过渡层(5)，在过渡层(5)上设有吸收层(6)，在吸收层(6)上刻蚀出双台面结构，刻蚀到掺杂层(4)，在吸收层(6)及双台面结构上沉积钝化层(9)，在钝化层(9)上开窗口，在深至掺杂层(4)的窗口处设置欧姆接触层(7)，在吸收层(6)的窗口处设置肖特基接触层(8)，在器件表面依次设置绝缘层a(10)、挡光层(11)和绝缘层b(12)，并且开孔使欧姆接触层(7)和肖特基接触层(8)露出；
其中所述缓冲层(2)为非故意掺杂AlN，厚度为1000nm；
其中所述阻挡层(3)为Al组分为0.55的n型AlGaN，厚度为1000nm；
其中所述掺杂层(4)为Al组分为0.52的n型AlGaN，厚度为800nm；
其中所述过渡层(5)为n型AlGaN，厚度为30nm，该层Al组分在0.42-0.52之间逐渐变化，靠近掺杂层(4)端的Al组分为0.52，靠近吸收层(6)端的Al组分为0.42，中间部分的Al组分逐渐变化；
其中所述吸收层(6)为Al组分为0.42的非故意掺杂AlGaN，厚度为250nm。
2.根据权利要求1所述的具有挡光层的非等平面AlGaN基肖特基型紫外探测器，其特征在于：所述欧姆接触层(7)为钛/铝/镍/金，厚度为30/150/50/100nm；所述肖特基接触层(8)为镍/金，厚度为20/100nm。
3.根据权利要求2所述的具有挡光层的非等平面AlGaN基肖特基型紫外探测器，其特征在于：所述钝化层(9)为二氧化硅，厚度为200nm。
4.根据权利要求3所述的具有挡光层的非等平面AlGaN基肖特基型紫外探测器，其特征在于：所述绝缘层a(10)为环氧树脂，厚度为1600-2000nm；所述挡光层(11)为金属铝，厚度为500nm；所述绝缘层b(12)为环氧树脂，厚度为3000nm。
5.基于权利要求1-4中任一项所述的具有挡光层的非等平面AlGaN基肖特基型紫外探测器的制备方法，其步骤包括：
(1)通过金属有机化合物化学气相沉积技术在蓝宝石衬底(1)上沉积缓冲层(2)；
(2)在缓冲层(2)上沉积阻挡层(3)；
(3)在阻挡层(3)上沉积掺杂层(4)；
(4)在掺杂层(4)上沉积AlGaN薄膜，在AlGaN薄膜上通过多次注入不同能量和剂量的Al离子，获得过渡层(5)；
(5)在过渡层(5)上沉积吸收层(6)；
(6)通过感应耦合等离子技术在吸收层(6)上刻蚀出双台面结构；
(7)通过等离子增强化学气相沉积技术在器件表面沉积钝化层(9)，并进行开窗口，留出蒸镀金属的地方；
(8)通过电子束蒸发技术在掺杂层(4)上蒸镀欧姆接触层(7)；
(9)在吸收层(6)上蒸镀肖特基接触层(8)；
(10)在器件表面涂绝缘层a(10)，开孔并固化；在绝缘层a(10)蒸镀挡光层(11)；在器件表面涂绝缘层b(12)，开孔并固化。
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