CN104465853B - 一种雪崩光电二极管及其制作方法 - Google Patents

一种雪崩光电二极管及其制作方法 Download PDF

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CN104465853B
CN104465853B CN201410818494.4A CN201410818494A CN104465853B CN 104465853 B CN104465853 B CN 104465853B CN 201410818494 A CN201410818494 A CN 201410818494A CN 104465853 B CN104465853 B CN 104465853B
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向伟
王国伟
徐应强
郝宏玥
蒋洞微
任正伟
贺振宏
牛智川
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Abstract

本发明公开了一种雪崩光电二极管及其制作方法。所述二极管包括：在衬底上至少外延生长的缓冲层，N型欧姆接触层，光吸收层，雪崩倍增层和P型欧姆接触层。本发明采用不同厚度的InAs层、GaSb层的超晶格制成光吸收层，可以吸收从短波到长波的红外，同时AlGaAsSb可以减少暗电流，通过台面刻蚀，钝化和蒸金属后制成器件，器件可以响应短波到长波红外并可以提供一定的增益，从而提高探测器的信噪比。

Description

一种雪崩光电二极管及其制作方法
技术领域
本发明涉及半导体技术领域，特别是一种用于中波红外的雪崩光电二极管。
背景技术
雪崩光电二极管(APD)广泛用作如光纤光传输系统、战略预警、制导感测、激光雷达等民用和军用领域，因为雪崩光电二极管显著的提高了光探测的灵敏度和更快的响应速度。然而，基于InP衬底的晶格匹配InGaAs雪崩光电二极管的截止波长不超过1.7微米，而外延出晶格不匹配的雪崩光电二极管材料质量不够好，难以实现高性能。而能扩展到中波红外波段的碲镉汞红外探测器由于衬底难，成品率低，材料生长均匀性差，导致制作的雪崩二极管成本高。
InAs/GaSb超晶格材料作为红外探测器量子效率高，均匀性好，成本低，生长质量好，通过调节InAs和GaSb的厚度，材料仍可与GaSb衬底匹配，其吸收波长可有短波红外到长波红外。但InAs/GaSb超晶格禁带宽度窄，外加高压倍增后暗电流大，无法实现提高信噪比。AlGaAsSb也可以与GaSb衬底匹配，提供更宽的禁带宽带，由InAs/GaSb超晶格做成的吸收区和AlGaAsSb倍增区组成的雪崩二极管可以实现短波到长波的高灵敏低噪声的探测。
发明内容
本发明的目的是提供一种短波到长波红外雪崩光电二极管。本发明的雪崩光电二极管利用窄禁带的InAs/GaSb超晶格作为光吸收区拓展红外雪崩二极管的波长，利用宽禁带的AlGaAsSb为雪崩区，组成吸收区与倍增区分离的雪崩光电二极管。
本发明提出的一种雪崩光电二极管，其包括在衬底上至少外延生长的 缓冲层，N型欧姆接触层，光吸收层，雪崩倍增层和P型欧姆接触层。
本发明还提出了一种雪崩光电二极管的制作方法，其包括：
在衬底上制备外延片，包括：在衬底上至少依次外延生长缓冲层、N型欧姆接触层、倍增层、光吸收层和P型欧姆接触层；
制备好的外延片上制作台面；
在台面上电镀一层硫，然后沉积一层绝缘层覆盖在硫上面，并在台面上方刻蚀硫和绝缘层而形成通光孔，在台面四周开电极窗口，深度至N型接触层表面；
沉积一层电极金属层，然后剥离去除P电极和N电极以外的金属，所述P电极位于所述通光孔上，所述N电极位于电极窗口上。
本发明采用不同厚度的InAs层、GaSb层的超晶格制成光吸收层，可以吸收从短波到长波的红外，同时AlGaAsSb可以减少暗电流，通过台面刻蚀，钝化和蒸金属后制成器件，器件可以响应短波到长波红外并可以提供一定的增益，从而提高探测器的信噪比。
附图说明
图1是本发明中雪崩光电二极管的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。
图1为本发明实施例中的雪崩二极管的剖面示意图。如图1所示，所述雪崩二极管包括：
GaSb衬底1；
GaSb缓冲层2，其外延生长在衬底1上；
N型欧姆接触层3，其生长在所述缓冲层2上；
台面，其位于N型欧姆接触层3上，包括：
N区电荷层4，其生长在N型欧姆接触层3上；
雪崩倍增层5，其生长在N区电荷层4上表面；
电荷截止层6，其生长在雪崩倍增层5的上表面；
光吸收层7，其生长在电荷截止层6的上表面；
P区电荷层8，其生长在光吸收层7上表面；
P型欧姆接触层9，其生长在P区电荷层8上表面；
保护层10，覆盖于台面侧壁；
P电极11，环形位于台面上与P型欧姆接触层9接触，台面中间未覆盖电极地方为通光孔；
N电极12，位于台面下，与N型欧姆接触层3直接接触；
与现有技术的不同点在于，其光吸收层采用了InAs/GaSb超晶格，这种材料的优势在于可以通过调整GaSb与InAs的厚度，吸收从短波红外到长波红外的光。吸收区与倍增区分离结构又确保了窄禁带的吸收区中的电场强度很小，在扩展了波长的同时，又可以保持较低的暗电流，从而提高了探测器的性能。
倍增层采用与GaSb晶格匹配的AlGaAsSb材料制成，其通过碰撞电离过程，在光电二极管中提供了内部增益，其材料禁带宽度比InAs/GaSb超品格，可以减少在高电压下的隧穿电流。
截止层在光吸收层和倍增之间，由高P型掺杂的AlGaAsSb材料制成，使得大部分电场分布于N型电极和截止层之间，即使倍增区保持了高电场，有利于电子的倍增，同时保证光吸收层的电场较小，减小暗电流。
本发明实施例中，在GaSb衬底1上由有机金属气相(MOCVD)或者分子束外延(MBE)外延生长，下面以截止探测波长5微米的雪崩光电二极管为例，但不限定于中波InAs/GaSb超晶格，具体说明本发明提出的雪崩光电二极管的制作方法，具体步骤如下：
如图1所示，在GaSb衬底1上，依次外延下面几层：载流子浓度为1-3×1018，厚度为0.5μm的N型GaSb缓冲层2；载流子浓度为1-3×1018；厚度为0.5μm的N型GaSb欧姆接触层3；载流子浓度为1-3×1018cm-3、厚度0.5μm的AlGaAsSb电荷层4；非有意掺杂或者P型掺杂厚度为1微米的AlGaAsSb倍增层5；载流子浓度为3×1017cm-3厚度的AlGaAsSb电荷截止层6；非故意掺杂、厚度1.0μm的InAs/GaSb超晶格的光吸收层7；载流子浓度为1-3×1018cm-3、厚度0.5μm的P型AlGaAsSb电荷层8；载流子浓度为1-3×1018cm-3，100nm的N型GaSb的N型欧姆接触层9， 制作形成外延片。其中InAs/GaSb超晶格光吸收层7是由100-200个周期交替排列的InAs层和GaSb层组成。每个周期中InAs的厚度为每个周期中GaSb层厚度为
以上说明中，光吸收层7是和交替组成的超晶格，但是不限定于此，只要是InAs/GaSb组成的能吸收红外的超晶格均可以制作成吸收层。例如和交替组成的吸收短波超晶格， 和交替组成的吸收长波超晶格均可以当做光吸收层。
制备好的外延片采用标准光刻技术并用磷酸、柠檬酸、双氧水腐蚀制作台面或者采用ICP刻蚀制作台面，台面刻蚀深度3.4μm，腐蚀到N型欧姆接触层3。
然后在无水硫化钠的乙二醇溶液中将外延片电镀一层30nm的硫，然后用磁控溅射沉积一层200nm的SiO2覆盖在硫上面，光刻并用HF缓冲液腐蚀SiO2和硫层，在台面上开出一个略小于台面大小的孔用于制作N型接触和通光孔，在台面四周开孔用于制作P型欧姆接触，台面侧壁留下硫及SiO2组成的保护层10。采用硫层钝化可以饱和台面侧壁的悬挂键，减少暗电流，SiO2增加物理钝化的效果。
光刻并依次沉积Ti、Pt、Au三种金属，然后剥离去除P电极11和N电极12以外的上述金属，最终在台面上留下P电极11和台面下留下N电极12，台面上未覆盖保护层10及P电极11的地方作为通光孔，所述P电极制作在台面上所开孔的四周，所述N电极制作在台面四周所开的孔上。Ti/Pt/Au能与高掺的N型GaSb和P型GaSb形成良好的欧姆接触。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (7)

1.一种雪崩光电二极管，其特征在于，在衬底上至少依次设置外延生长的缓冲层，N型欧姆接触层，光吸收层，雪崩倍增层和P型欧姆接触层；
其中，所述雪崩倍增层由AlGaAsSb材料制成；所述光吸收层由InAs/GaSb超晶格材料制成，所述InAs/GaSb超晶格材料由交替生长的InAs层和GaSb层组成，所述InAs层和GaSb层的厚度由所要制造的雪崩光电二极管器件可吸收的波长范围确定。
2.如权利要求1所述的雪崩光电二极管，还包括由AlGaAsSb构成的N区电荷层和P区电荷层，所述N区电荷层生长在N型欧姆接触层上，所述P区电荷层生长在光吸收层上。
3.如权利要求1或2所述的雪崩光电二极管，还包括：电荷截止层，其位于光吸收层和雪崩倍增层之间；所述电荷截止层由p型掺杂的AlGaAsSb材料制成。
4.一种雪崩光电二极管的制作方法，其包括：
在衬底上制备外延片，包括：在衬底上至少依次外延生长缓冲层、N型欧姆接触层、雪崩倍增层、光吸收层和P型欧姆接触层；
制备好的外延片上制作台面；
在台面上电镀一层硫，然后沉积一层绝缘层覆盖在硫上面，并在台面上方刻蚀硫和绝缘层而形成通光孔，在台面四周开电极窗口，深度至N型接触层表面；
沉积一层电极金属层，然后剥离去除P电极和N电极以外的金属，所述P电极位于所述通光孔上，所述N电极位于电极窗口上；
其中，所述雪崩倍增层由AlGaAsSb材料制成；所述光吸收层由InAs/GaSb超晶格材料制成，所述InAs/GaSb超晶格材料由交替生长的InAs层和GaSb层组成，所述InAs层和GaSb层的厚度由所要制造的雪崩光电二极管器件可吸收的波长范围确定。
5.如权利要求4所述的制作方法，其中，所述倍增层采用InAs/GaSb超晶格匹配的AlGaAsSb材料制成。
6.如权利要求4所述的制作方法，其中，制备外延片的步骤还包括：在光吸收层和倍增层之间生长电荷截止层，所述电荷截止层由P型掺杂的AlGaAsSb材料制成。
7.如权利要求4所述的制作方法，其中，所述电极金属层材料为Ti/Pt/Au。
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