CN110047774B - 一种沉浸式制备钙钛矿薄膜的设备及使用方法和应用 - Google Patents
一种沉浸式制备钙钛矿薄膜的设备及使用方法和应用 Download PDFInfo
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- CN110047774B CN110047774B CN201810046196.6A CN201810046196A CN110047774B CN 110047774 B CN110047774 B CN 110047774B CN 201810046196 A CN201810046196 A CN 201810046196A CN 110047774 B CN110047774 B CN 110047774B
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- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
本发明涉及一种沉浸式制备钙钛矿薄膜的设备,包括一密封腔室,在密封腔室内至少设置有一组半封闭反应器装置,半封闭反应器装置包括下加热升华装置和上加热台,在下加热升华装置的顶部设置有器皿,在器皿内盛载有反应物前体,在器皿的正上方设置有基片架,基片架遮罩在器皿的开口上,在器皿的侧面设置有基片架支撑平台,基片架设置在基片架支撑平台上,在基片架的下底面设置有待沉积的基片,基片上的待沉积面正朝向器皿中的反应物前体,上加热台设置在基片架上给基片加热。本发明还公开了使用该沉浸式制备钙钛矿薄膜的设备制备钙钛矿太阳能电池的方法。本发明可在制备过程中控制薄膜的晶体生长,提高成膜质量及均匀性和重复性。
Description
技术领域
本发明属于钙钛矿太阳能电池技术领域,特别涉及一种沉浸式制备钙钛矿薄膜的设备及使用方法和应用。
背景技术
太阳能电池是一种光电转换器件,利用半导体的光伏效应将太阳能转化为电能。发展至今,太阳能发电已经成为除水力发电和风力发电之外最重要的可再生能源。现用于商业化的半导体有单晶硅、多晶硅、非晶硅、碲化镉、铜铟镓硒等等,但大多能耗大、成本高。
近年来,一种钙钛矿太阳能电池受到广泛关注,这种钙钛矿太阳能电池以有机金属卤化物为光吸收层。钙钛矿为ABX3型的立方八面体结构,如图1所示。此种材料制备的薄膜太阳能电池工艺简便、生产成本低、稳定且转化率高,自2009年至今,光电转换效率从3.8%提升至22%以上,已高于商业化的晶硅太阳能电池且具有较大的成本优势。
现有的各种钙钛矿太阳能电池薄膜成型工艺可分为两大类:溶液法和气相法。在溶液法操作简便,但薄膜均一性、重复性差,影响电池的效率。气相法有双源共蒸发法、气相辅助溶液法、化学气相沉积(CVD)等方法,其中气相溶液辅助法可制备均一、大晶粒尺寸、表面粗糙度小的钙钛矿薄膜,但薄膜的重复性、成膜质量有待提高。
发明内容
本发明所要解决的技术问题在于,提供一种沉浸式制备钙钛矿薄膜的设备及使用方法和应用,提供了一个均匀稳定的反应环境,可在制备过程中控制薄膜的晶体生长,提高成膜质量及均匀性和重复性,并可嵌入大型生产线进行连续生产。
本发明是这样实现的,提供一种沉浸式制备钙钛矿薄膜的设备,包括一密封腔室,在所述密封腔室内至少设置有一组半封闭反应器装置,所述半封闭反应器装置包括下加热升华装置和上加热台,在所述下加热升华装置的顶部设置有开口朝上的器皿,在所述器皿内盛载有反应物前体,在所述器皿的正上方设置有基片架,所述基片架遮罩在器皿的开口上,在所述器皿的侧面设置有基片架支撑平台,所述基片架设置在基片架支撑平台上,在所述基片架的下底面设置有待沉积的基片,所述基片位于器皿的正上方,其上的待沉积面正朝向器皿中的反应物前体,所述上加热台设置在基片架上以加热基片,所述反应物前体被蒸发沉积到基片表面;控制密封腔室内的气压,控制上加热台和下加热升华装置的加热温度。
进一步地,所述器皿的开口面积大于基片的面积。
进一步地,所述基片架可带动基片在水平或垂直方向来回往复运动。
进一步地,在所述器皿内的反应物前体厚度为2~10mm,其厚度差不超过0.1~1.0mm;所述基片的待沉积面与反应物前体的顶面高度距离为5~40mm。
进一步地,所述密封腔室内的反应气压范围为10-5Pa~105Pa,所述上加热台的加热温度范围为20~400℃,所述下加热升华装置的加热温度范围为20~400℃,反应时间为10~120min。
进一步地,所述密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
本发明是这样实现的,还提供一种如前所述的沉浸式制备钙钛矿薄膜的设备的使用方法,包括以下步骤:
第一步骤、向器皿中倒入反应物前体材料,将基片的待沉积面朝下设置在基片架的内底面上,将基片架放置在基片架支撑平台上,然后将设置好的半封闭反应器装置放入密封腔室内;
第二步骤、抽取密封腔室内的气体,控制密封腔室内的气压;给上加热台和下加热升华装置分别通电,控制上加热台和下加热升华装置的加热温度,反应物前体被蒸发并沉积到基片表面上;
第三步骤、持续反应10~120min时间后,将上加热台和下加热升华装置断电停止加热,并恢复密封腔室内为大气压,取出沉积好反应物前体的基片。
进一步地,在第一步骤中,在所述器皿内的反应物前体厚度为2~10mm,其厚度差不超过0.1~1.0mm,所述基片的待沉积面与反应物前体的顶面高度距离为5~40mm。
进一步地,在第二步骤中,所述基片架可带动基片在水平或垂直方向来回往复运动。
进一步地,在第二步骤中,所述的密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
进一步地,在第二步骤中,所述密封腔室内的反应气压范围为10-5Pa~105Pa,所述上加热台的加热温度范围为20~400℃,所述下加热升华装置的加热温度范围为20~400℃。
本发明是这样实现的,还提供一种钙钛矿太阳能电池,所述钙钛矿太阳能电池包括钙钛矿层,在所述钙钛矿层的制备过程中使用如前所述的沉浸式制备钙钛矿薄膜的设备。
本发明是这样实现的,还提供一种前述的钙钛矿太阳能电池的制备方法,所述钙钛矿太阳能电池包括第一导电电极、第一传输层、钙钛矿薄膜层、第二传输层以及第二导电电极,其制备方法包括以下步骤:
S1、在第一导电电极上制备第一传输层;
S1、利用旋涂、刮涂、狭缝式连续涂布、喷涂、印刷或真空沉积中任意一种加工方法在沉积有第一传输层的基底上沉积一种或多种金属卤化物BX2薄膜;
S2、其次将沉积有金属卤化物BX2薄膜的基片作为待沉积基片固定在如前所述的沉浸式制备钙钛矿薄膜的设备的基片架上,在所述器皿中放置一种或多种反应物AX并每种均匀铺平,所述基片的待沉积面朝下正对器皿中的反应物AX,同时给上加热台和下加热升华装置加热,控制密封腔室内的气压,控制上加热台和下加热升华装置的加热温度,反应物AX被蒸发并沉积到含有金属卤化物BX2的基片表面上生成钙钛矿薄膜层;
S3、反应结束后,取出已沉积好的基片;
S4、在制备的钙钛矿薄膜层上沉积第二传输层;
S5、沉积第二导电电极;
其中,所述金属卤化物BX2中的B为二价金属阳离子,可为铅、锡、钨、铜、锌、镓、锗、砷、硒、铑、钯、银、镉、铟、锑、锇、铱、铂、金、汞、铊、铋、钋中的一种阳离子,X为氯、溴、碘、硫氰根、氰根、氧氰根中任意的一种阴离子;所述金属卤化物BX2薄膜厚度为80-300nm;
所述的反应物AX中A为铯、铷、钾、胺基、脒基或者碱族中任意的一种阳离子,X为氯、溴、碘、硫氰根、氰根、氧氰根中任意的一种阴离子。
进一步地,所述在所述器皿内的反应物前体厚度为2~10mm,每种反应物前体的厚度差不超过0.1~1.0mm,所述基片的待沉积面与反应物前体的顶面高度距离为5~40mm;所述密封腔室内的反应气压范围为10-5Pa~105Pa,所述上加热台的加热温度范围为100~400℃,所述下加热升华装置的加热温度范围为100~400℃,制备的钙钛矿薄膜层的厚度为100~600nm。
进一步地,所述基片架可带动基片在水平或垂直方向来回往复运动。
进一步地,所述的密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
与现有技术相比,本发明的沉浸式制备钙钛矿薄膜的设备及使用方法和应用,提供了一个均匀稳定的反应环境,可在钙钛矿薄膜的制备过程中控制薄膜的晶体生长,提高成膜质量及均匀性和重复性,并可嵌入大型生产线进行连续生产。
与现有技术相比,本发明同时还具有以下特点:
1. 可精确地控制要形成的钙钛矿薄膜的质量,提高钙钛矿薄膜的均匀性。
2. 促进金属卤化物与卤化物蒸汽的充分反应,提高对于钙钛矿结晶的可控性。
3. 提供了一种可实现连续性生产的方案。
4. 提高沉积速度及材料的利用率。
5. 真空下沉积防止钙钛矿材料的分解或变质。
附图说明
图1为现有技术钙钛矿薄膜中分子结构示意图;
图2为本发明的沉浸式制备钙钛矿薄膜的设备一较佳实施例的平面示意图;
图3为图2中半封闭装置的一个较佳示例的平面示意图;
图4为图3中基片架较佳示例示意图;
图5为本发明的钙钛矿太阳能中钙钛矿薄膜的制备流程图;
图6为使用本发明的沉浸式制备钙钛矿薄膜的设备制得的钙钛矿薄膜的扫描电镜图;
图7为使用本发明的沉浸式制备钙钛矿薄膜的设备制得的钙钛矿太阳能电池的JV曲线。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
请同时参照图2、图3以及图4所示,本发明沉浸式制备钙钛矿薄膜的设备,包括一密封腔室1,在所述密封腔室1内至少设置有一组半封闭反应器装置2。
所述半封闭反应器装置2包括下加热升华装置3和上加热台4。在所述下加热升华装置3的顶部设置有开口朝上的器皿5,在所述器皿5内盛载有反应物前体。在所述器皿5的正上方设置有基片架6。所述基片架6遮罩在器皿5的开口上。在所述器皿5的侧面设置有基片架支撑平台7,所述基片架6设置在基片架支撑平台7上。在所述基片架6的下底面设置有待沉积的基片8,所述基片8位于器皿5的正上方,其上的待沉积面正朝向器皿5中的反应物前体。所述上加热台4设置在基片架6上以加热基片8。所述反应物前体被蒸发沉积到基片8表面。控制密封腔室1内的气压,控制上加热台4和下加热升华装置3的加热温度。所述上加热台4设置在基片架6的顶部,在所述下加热升华装置3内设置有给器皿5中的反应物前体加热的反应物加热装置,在所述上加热台4上设置有给基片8加热的基片加热装置。
所述器皿5的开口面积大于基片8的面积。在所述器皿5内的反应物前体厚度为2~10mm,其厚度差不超过0.1~1.0mm。所述基片8的待沉积面与反应物前体的顶面高度距离为5~40mm。
所述密封腔室1内的反应气压范围为10-5Pa~105Pa,所述上加热台4的加热温度范围为20~400℃,所述下加热升华装置3的加热温度范围为20~400℃,反应时间为10~120min。
本发明的沉浸式制备钙钛矿薄膜的设备还包括一传动装置9,所述传动装置9驱动基片架支撑平台7使基片架6在水平方向或垂直方向上来回往复运动。
本发明的密封腔室1为小型腔体或大型连续生产设备。密封腔室1的气压由真空泵和真空阀控制。
本发明还公开了一种如前所述的沉浸式制备钙钛矿薄膜的设备的使用方法,包括以下步骤:
第一步骤、向器皿5中倒入反应物前体材料,将基片8的待沉积面朝下设置在基片架6的内底面上,将基片架6放置在基片架支撑平台7上,然后将设置好的半封闭反应器装置2放入密封腔室1内。
第二步骤、抽取密封腔室1内的气体,控制密封腔室1内的气压,给上加热台4和下加热升华装置3分别通电,控制上加热台4和下加热升华装置3的加热温度,反应物前体被蒸发并沉积到基片8表面上。
第三步骤、持续反应10~120min时间后,将上加热台4和下加热升华装置3断电停止加热,并恢复密封腔室1内为大气压,取出沉积好反应物前体的基片8。
在第一步骤中,在所述器皿5内的反应物前体厚度为2~10mm,其厚度差不超过0.1~1.0mm,所述基片8的待沉积面与反应物前体的顶面高度距离为5~40mm。
在第二步骤中,所述密封腔室1内的反应气压范围为10-5Pa~105Pa,所述上加热台4的加热温度范围为20~400℃,所述下加热升华装置3的加热温度范围为20~400℃。
在第二步骤中,所述基片架6可带动基片8在水平或垂直方向来回往复运动。
在第二步骤中,所述的密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
本发明还公开了一种钙钛矿太阳能电池,所述钙钛矿太阳能电池包括钙钛矿层,在所述钙钛矿层的制备过程中使用如前所述的沉浸式制备钙钛矿薄膜的设备。
请参照图5所示,本发明还公开了一种钙钛矿太阳能电池的制备方法,所述钙钛矿太阳能电池包括第一导电电极、第一传输层、钙钛矿薄膜层、第二传输层以及第二导电电极,其制备方法包括以下步骤:
S1、在第一导电电极上制备第一传输层。
S2、利用旋涂、刮涂、狭缝式连续涂布、喷涂、印刷或真空沉积中任意一种加工方法在沉积有第一传输层的基底上沉积一种或多种金属卤化物BX2薄膜。
S3、其次将沉积有金属卤化物BX2薄膜的基片8作为待沉积基片固定在如前所述的沉浸式制备钙钛矿薄膜的设备的基片架6上,在所述器皿5中放置一种或多种反应物AX并每种均匀铺平,所述基片8的待沉积面朝下正对器皿5中的反应物AX,同时给上加热台4和下加热升华装置3加热,控制密封腔室1内的气压,控制上加热台4和下加热升华装置3的加热温度,反应物AX被蒸发并沉积到含有金属卤化物BX2的基片8表面上生成钙钛矿薄膜层。
S4、反应结束后,取出已沉积好的基片8。
S5、在基片8的钙钛矿薄膜层上沉积第二传输层。
S6、沉积第二导电电极。
其中,所述金属卤化物BX2中的B为二价金属阳离子,可为铅(Pb2+)、锡(Sn2+)、钨(W2 +)、铜(Cu2+)、锌(Zn2+)、镓(Ga2+)、锗(Ge2+)、砷(As2+)、硒(Se2+)、铑(Rh2+)、钯(Pd2+)、银(Ag2 +)、镉(Cd2+)、铟(In2+)、锑(Sb2+)、锇(Os2+)、铱(Ir2+)、铂(Pt2+)、金(Au2+)、汞(Hg2+)、铊(Tl2 +)、铋(Bi2+)、钋(Po2+)中的一种阳离子,X为氯(Cl-)、溴(Br-)、碘(I-)、硫氰根(NCS-)、氰根(CN-)、氧氰根 (NCO-)中任意的一种阴离子;所述金属卤化物BX2薄膜厚度为80-300nm。
其中,所述的反应物AX中A为铯(Cs+)、铷(Rb+)、钾(K+)、胺基、脒基或者碱族中的一种,X为氯(Cl-)、溴(Br-)、碘(I-)、硫氰根(NCS-)、氰根(CN-)、氧氰根 (NCO-)中任意的一种阴离子。
所述在所述器皿5内的反应物前体厚度为2~10mm,每种反应物前体的厚度差不超过0.1~1.0mm,所述基片8的待沉积面与反应物前体的顶面高度距离为5~40mm。所述密封腔室1内的反应气压范围为10-5Pa~105Pa,所述上加热台4的加热温度范围为100~400℃,所述下加热升华装置3的加热温度范围为100~400℃,制备的钙钛矿薄膜层的厚度为100~600nm。
所述基片架6可带动基片8在水平或垂直方向来回往复运动。
所述的密封腔室为小型腔体或大型连续生产设备,所述密封腔室1内的气压由真空泵和真空阀控制。
下面结合具体实施例来说明使用本发明的沉浸式制备钙钛矿薄膜的设备来制备钙钛矿太阳能电池的方法。
实施例1。
一种钙钛矿太阳能电池的制备方法,包括以下步骤:
(1)将10×10cm的ITO玻璃板依次经洗洁精、去离子水、丙酮、异丙醇超声各清洗30min,再用N2吹干后经UV O-zone处理10min;
(2)制备PEDOT:PSS薄膜作为空穴传输层;
(3)制备金属卤化物薄膜前驱液:将461mg的PbI2(1mmol)、溶解于1mL的DMF溶液中,60℃加热搅拌2h,溶解后待用;
(4)使用制备的前驱液通过狭缝涂布制备掺杂的PbI2薄膜;
(5)将沉积有金属卤化物薄膜的基片8固定于基片架6,带沉积面朝下,利用传动装置将反应腔上盖传输至被MAI铺满的蒸发皿正上方,架于基片架支撑平台7上,利用真空泵抽真空控制气压,到达在一定值后反馈于真空阀使其关闭,密封腔室1腔体内气压范围为10-5Pa~105Pa,下加热台升华装置3控制在100℃~200℃,上加热台4加热温度控制在100℃~200℃,MAI气体分子与PbI2反应生成钙钛矿薄膜,反应时间为10-120min;
(8)沉积电子传输层PCBM;
(9)蒸镀金属导电层Ag电极,制得钙钛矿太阳能电池。
图6为使用本发明的沉浸式制备钙钛矿薄膜的设备制得的钙钛矿薄膜的扫描电镜图,从图上可以看出,使用此法制备的钙钛矿平整、致密,晶体颗粒大小均匀。
图7为使用本发明的沉浸式制备钙钛矿薄膜的设备制得的钙钛矿太阳能电池的JV曲线,电池效率达16.08%(PCE)。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (16)
1.一种沉浸式制备钙钛矿薄膜的设备,包括一密封腔室,其特征在于,在所述密封腔室内至少设置有一组半封闭反应器装置,所述半封闭反应器装置包括下加热升华装置和上加热台,在所述下加热升华装置的顶部设置有开口朝上的器皿,在所述器皿内盛载有反应物前体,在所述器皿的正上方设置有基片架,所述基片架遮罩在器皿的开口上,在所述器皿的侧面设置有基片架支撑平台,所述基片架设置在基片架支撑平台上,在所述基片架的下底面设置有待沉积的基片,所述基片位于器皿的正上方,其上的待沉积面正朝向器皿中的反应物前体,所述上加热台设置在基片架上以加热基片,所述反应物前体被蒸发沉积到基片表面;控制密封腔室内的气压,控制上加热台和下加热升华装置的加热温度。
2.如权利要求1所述的沉浸式制备钙钛矿薄膜的设备,其特征在于,所述器皿的开口面积大于基片的面积。
3.如权利要求1所述的沉浸式制备钙钛矿薄膜的设备,其特征在于,所述基片架可带动基片在水平或垂直方向来回往复运动。
4.如权利要求1所述的沉浸式制备钙钛矿薄膜的设备,其特征在于,在所述器皿内的反应物前体厚度为2~10mm,其厚度差不超过0.1~1.0mm;所述基片的待沉积面与反应物前体的顶面高度距离为5~40mm。
5.如权利要求1所述的沉浸式制备钙钛矿薄膜的设备,其特征在于,所述密封腔室内的反应气压范围为10-5Pa~105Pa,所述上加热台的加热温度范围为20~400℃,所述下加热升华装置的加热温度范围为20~400℃,反应时间为10~120min。
6.如权利要求1所述的沉浸式制备钙钛矿薄膜的设备,其特征在于,所述的密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
7.一种如权利要求1所述的沉浸式制备钙钛矿薄膜的设备的使用方法,其特征在于,包括以下步骤:
第一步骤、向器皿中倒入反应物前体材料,将基片的待沉积面朝下设置在基片架的内底面上,将基片架放置在基片架支撑平台上,然后将设置好的半封闭反应器装置放入密封腔室内;
第二步骤、抽取密封腔室内的气体,控制密封腔室内的气压;给上加热台和下加热升华装置分别通电,控制上加热台和下加热升华装置的加热温度,反应物前体被蒸发并沉积到基片表面上;
第三步骤、持续反应10~120min时间后,将上加热台和下加热升华装置断电停止加热,并恢复密封腔室内为大气压,取出沉积好反应物前体的基片。
8.如权利要求7所述的沉浸式制备钙钛矿薄膜的设备的使用方法,其特征在于,在第一步骤中,在所述器皿内的反应物前体厚度为2~10mm,其厚度差不超过0.1~1.0mm,所述基片的待沉积面与反应物前体的顶面高度距离为5~40mm。
9.如权利要求7所述的沉浸式制备钙钛矿薄膜的设备的使用方法,其特征在于,在第二步骤中,所述基片架可带动基片在水平或垂直方向来回往复运动。
10.如权利要求7所述的沉浸式制备钙钛矿薄膜的设备的使用方法,其特征在于,在第二步骤中,所述的密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
11.如权利要求7所述的沉浸式制备钙钛矿薄膜的设备的使用方法,其特征在于,在第二步骤中,所述密封腔室内的反应气压范围为10-5Pa~105Pa,所述上加热台的加热温度范围为20~400℃,所述下加热升华装置的加热温度范围为20~400℃。
12.一种钙钛矿太阳能电池,其特征在于,所述钙钛矿太阳能电池包括钙钛矿层,在所述钙钛矿层的制备过程中使用如权利要求1所述的沉浸式制备钙钛矿薄膜的设备。
13.一种如权利要求12所述的钙钛矿太阳能电池的制备方法,其特征在于,所述钙钛矿太阳能电池包括第一导电电极、第一传输层、钙钛矿薄膜层、第二传输层以及第二导电电极,其制备方法包括以下步骤:
S1、在第一导电电极上制备第一传输层;
S2、利用旋涂、刮涂、狭缝式连续涂布、喷涂、印刷或真空沉积中任意一种加工方法在沉积有第一传输层的基底上沉积一种或多种金属卤化物BX2薄膜;
S3、其次将沉积有金属卤化物BX2薄膜的基片作为待沉积基片固定在如权利要求1所述的沉浸式制备钙钛矿薄膜的设备的基片架上,在所述器皿中放置一种或多种反应物AX并每种均匀铺平,所述基片的待沉积面朝下正对器皿中的反应物AX,同时给上加热台和下加热升华装置加热,控制密封腔室内的气压,控制上加热台和下加热升华装置的加热温度,反应物AX被蒸发并沉积到含有金属卤化物BX2的基片表面上生成钙钛矿薄膜层;
S4、反应结束后,取出已沉积好的基片;
S5、在钙钛矿薄膜层上沉积第二传输层;
S6、沉积第二导电电极;
其中,所述金属卤化物BX2中的B为二价金属阳离子,可为铅、锡、钨、铜、锌、镓、锗、砷、硒、铑、钯、银、镉、铟、锑、锇、铱、铂、金、汞、铊、铋、钋中的一种阳离子,X为氯、溴、碘、硫氰根、氰根、氧氰根中任意的一种阴离子;所述金属卤化物BX2薄膜厚度为80-300nm;
所述的反应物AX中A为铯、铷、钾、胺基、脒基或者碱族中任意的一种阳离子,X为氯、溴、碘、硫氰根、氰根、氧氰根中任意的一种阴离子。
14.如权利要求13所述的钙钛矿太阳能电池的制备方法,其特征在于,所述在所述器皿内的反应物前体厚度为2~10mm,每种反应物前体的厚度差不超过0.1~1.0mm,所述基片的待沉积面与反应物前体的顶面高度距离为5~40mm;所述密封腔室内的反应气压范围为10-5Pa~105Pa,所述上加热台的加热温度范围为100~400℃,所述下加热升华装置的加热温度范围为100~400℃,制备的钙钛矿薄膜层的厚度为100~600nm。
15.如权利要求13所述的钙钛矿太阳能电池的制备方法,其特征在于,所述基片架可带动基片在水平或垂直方向来回往复运动。
16.如权利要求13所述的钙钛矿太阳能电池的制备方法,其特征在于,所述的密封腔室为小型腔体或大型连续生产设备,密封腔室内的气压由真空泵和真空阀控制。
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JP7037838B2 (ja) | 2022-03-17 |
KR102418868B1 (ko) | 2022-07-07 |
CN110047774A (zh) | 2019-07-23 |
US20200373507A1 (en) | 2020-11-26 |
JP7037838B6 (ja) | 2022-04-01 |
EP3723118A1 (en) | 2020-10-14 |
KR20200100148A (ko) | 2020-08-25 |
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