CN110042346A - It is a kind of to improve the device of the evaporation of aluminum uniformity, device and method - Google Patents
It is a kind of to improve the device of the evaporation of aluminum uniformity, device and method Download PDFInfo
- Publication number
- CN110042346A CN110042346A CN201910412584.6A CN201910412584A CN110042346A CN 110042346 A CN110042346 A CN 110042346A CN 201910412584 A CN201910412584 A CN 201910412584A CN 110042346 A CN110042346 A CN 110042346A
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- Prior art keywords
- silicon wafer
- aluminum
- objective table
- evaporation
- aluminium
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Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 136
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 230000008020 evaporation Effects 0.000 title claims abstract description 46
- 238000001704 evaporation Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000004411 aluminium Substances 0.000 claims abstract description 68
- 230000009471 action Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 52
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010010 raising Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Present disclose provides a kind of devices for improving the evaporation of aluminum uniformity, device and method, including deposited chamber, at least one aluminium vapour source and objective table are equipped in the deposited chamber, the aluminium vapour source is fixed on above objective table, the objective table is for placing silicon wafer, at least one baffle is equipped between the aluminium vapour source and objective table, for stopping aluminum steam to the concentration of aluminium vapour source lower position, reduce influence of the aluminium vapour source to silicon wafer distance itself, simultaneously by the way that uniform net is arranged between baffle and objective table, the uniformity of aluminium film be deposited is further improved；By the way that motor and each silicon wafer lattice bottom setting micro-step motor is arranged in objective table bottom, objective table is rotation, each silicon wafer is also rotation, largely eliminates influence of the different location to aluminium film thickness, reduces position difference bring non-uniformity.
Description
Technical field
This disclosure relates to evaporation coating technique field, in particular to a kind of device and method for improving the evaporation of aluminum uniformity.
Background technique
The statement of this part only there is provided background technique relevant to the disclosure, not necessarily constitutes the prior art.
Integrated circuit fabrication process mainly divides several committed steps: substrate-epitaxial layer-oxide layer-photoetching-corrosion-
It cleans the area N and makes (phosphorus diffusion)-oxide layer-photoetching-corrosion-cleaning-area P production-oxide layer-photoetching-corrosion-
Evaporation of aluminum-photoetching-corrosion-segmentation-detection-encapsulation-aging-test.Wherein evaporation of aluminum refers to the uniform film aluminium layer of manufacture,
It is to provide each semiconductor regions and connects into one of critical process of integrated circuit, and improves the weight of integrated circuit electric conductivity
Technique, especially high power device and high-frequency element is wanted there are demanding specifications to the uniformity and thickness of aluminium layer film.
But the disclosed invention people has found under study for action, in current evaporation of aluminum technique, the aluminium film thickness uniformity of formation is not
Height seriously affects product quality and performances, is mainly reflected in: different location, some are close from evaporation silicon source in steam room, fall in the silicon
On piece aluminium thin layer is with regard to more, and the aluminium layer thickness of formation is a bit；The silicon wafer at edge falls in the aluminum steam particle few one of silicon chip surface
The aluminium film of point, formation is thinner；Same silicon wafer different parts, aluminum layer thickness also have little discrimination.
Summary of the invention
In order to solve the deficiencies in the prior art, present disclose provides a kind of device, equipment and sides for improving the evaporation of aluminum uniformity
Method improves the uniformity of aluminium film, reduces aluminium film bring product quality problem in uneven thickness, and improvement cost is lower,
It can be used in current most of aluminium-vapour deposition equipment, replicability is strong.
To achieve the goals above, the disclosure adopts the following technical scheme that
In a first aspect, present disclose provides a kind of devices for improving the evaporation of aluminum uniformity；
A kind of device improving the evaporation of aluminum uniformity, including deposited chamber, the deposited chamber is interior to be equipped at least one aluminium vapour source
And objective table, the aluminium vapour source are fixed on above objective table, the objective table is for placing silicon wafer, the aluminium vapour source and load
At least one baffle is equipped between object platform, for stopping aluminum steam to the concentration of aluminium vapour source lower position.
As possible some implementations, at least one uniform net is equipped between the baffle and objective table, it is described equal
The aperture of even net is greater than aluminium atom aperture.
As possible some implementations, the baffle is set to immediately below aluminium vapour source or the setting of face aluminium vapour source.
As possible some implementations, the objective table bottom is equipped with motor, rotates for band dynamic object stage.
As possible some implementations, the objective table is equipped with multiple silicon wafer lattice, is equipped with one in each silicon wafer lattice
Piece silicon wafer, each silicon wafer lattice bottom are equipped with a micro-step motor, and the micro-step motor drives the silicon wafer in silicon wafer lattice
Rotation.
Second aspect, present disclose provides a kind of evaporated devices, the dress including improving the evaporation of aluminum uniformity described in the disclosure
It sets.
The third aspect, present disclose provides a kind of methods for improving the evaporation of aluminum uniformity；
A method of the evaporation of aluminum uniformity being improved, steps are as follows:
Front side of silicon wafer is put into upward in the indoor silicon wafer lattice of vapor deposition, and raffinal vapour source is lighted after vacuumizing, and generates aluminium
Steam；
At least one baffle is set between aluminium vapour source and objective table, stops aluminum steam to aluminium vapour source lower position
It concentrates, aluminum steam, which spreads and drops to deposited chamber periphery under the action of the baffle, forms aluminium film on silicon wafer.
As possible some implementations, at least one uniform net is set between baffle and silicon wafer, for improving aluminium
Steam drops to the uniformity on silicon wafer.
As possible some implementations, motor is set in objective table bottom, during evaporation of aluminum, motor drives loading
Platform rotation, and then with all silicon slice rotatings in dynamic object stage.
As possible some implementations, multiple silicon wafer lattice are set on objective table, are equipped in each silicon wafer lattice a piece of
Silicon wafer, each silicon wafer lattice bottom is equipped with a micro-step motor, and during evaporation of aluminum, micro-step motor is driven in silicon wafer lattice
Silicon slice rotating.
Compared with prior art, the beneficial effect of the disclosure is:
1, evaporation of aluminum device described in the disclosure, improves the uniformity of aluminium film, reduces aluminium film bring in uneven thickness
Product quality problem, improvement cost is lower, can use in current most of aluminium-vapour deposition equipment, replicability is strong.
2, evaporation of aluminum device described in the disclosure is used for by being equipped at least one baffle between aluminium vapour source and objective table
Stop concentration of the aluminum steam to aluminium vapour source lower position, reduce influence of the aluminium vapour source to silicon wafer distance itself, leads to simultaneously
It crosses and uniform net is set between baffle and objective table, further improve the uniformity of aluminium film be deposited.
3, evaporation of aluminum device described in the disclosure, it is micro- by being arranged in objective table bottom setting motor and each silicon wafer lattice bottom
Type stepper motor, objective table are rotations, each silicon wafer is also rotation, largely eliminate different location to aluminium film thickness
Influence, reduce position difference bring non-uniformity.
Detailed description of the invention
Fig. 1 is the silicon wafer schematic diagram that integrated circuit is had described in the embodiment of the present disclosure 1.
Fig. 2 is evaporation of aluminum schematic diagram in the prior art described in the embodiment of the present disclosure 1.
Fig. 3 is the apparatus structure schematic diagram that the evaporation of aluminum uniformity is improved described in the embodiment of the present disclosure 1.
Fig. 4 is the objective table schematic diagram equipped with motor of the device of the raising evaporation of aluminum uniformity described in the embodiment of the present disclosure 1.
Fig. 5 is equipped with motor and miniature stepping while being the device of the raising evaporation of aluminum uniformity described in the embodiment of the present disclosure 1
The objective table schematic diagram of motor.
Fig. 6 is the method flow diagram that the evaporation of aluminum uniformity is improved described in the embodiment of the present disclosure 2.
1- silicon wafer；2- chip；3- aluminium vapour source；4- aluminum steam；5- aluminium film；6- deposited chamber；7- baffle；The uniform net of 8-；
9- objective table；10- motor；11- silicon wafer lattice；12- micro-step motor.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the disclosure.Unless another
It indicates, all technical and scientific terms used herein has usual with disclosure person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the disclosure.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Currently, IC chip be usually made on 8,10,12,14 or 16 inch silicon wafers, as shown in Figure 1, for
The IC chip of said function is made on the silicon wafer of one 12 inch diameter, each small cube is exactly an integrated circuit
Chip；Tens big silicon wafer, one batch of even several hundred compositions, carries out unified technique and completes.
Current evaporation of aluminum technique is: front side of silicon wafer upward, is put into the evaporation of aluminum room of evaporation of aluminum equipment, vacuumizes, high voltage is lighted
High-purity aluminum or aluminum alloy generates aluminum steam, and the gas molecule of aluminium falls in integrated circuit surface, forms one layer very thin filter
Layer, thickness is at 6-12 microns, and thickness is depending on device conducts parameter, as shown in Figure 2.
But different location in steam room, some are close from evaporation silicon source, fall on the silicon wafer aluminium thin layer with regard to more, formation
A bit, the silicon wafer at edge, the aluminum steam particle for falling in silicon chip surface is a little less, and the aluminium film of formation is thinner for aluminium layer thickness；It is same
Block silicon wafer different parts, aluminum layer thickness also have little discrimination, to cause the disunity of product, quality is irregular.
Embodiment 1:
In order to improve vapor deposition aluminium film uniformity, improve product quality, the embodiment of the present disclosure 1 provides a kind of raisings steaming
The device of the aluminium uniformity is equipped at least one aluminium vapour source 3 and loading in the deposited chamber 6 as shown in figure 3, including deposited chamber 6
Platform 9, the aluminium vapour source 3 are fixed on 9 top of objective table, and the objective table 9 is used for for placing silicon wafer 1, aluminium vapour source 3 in height
Temperature is lower to generate aluminum steam 4, and aluminum steam 4, which deposits to, forms aluminium film 5, the aluminium vapour source 3 and objective table on the silicon wafer 1 of objective table
A baffle 7 is equipped between 9, the aluminium vapour source is set to right above deposited chamber 6, under the baffle 7 is set to aluminium vapour source 3 just
Side, for stopping aluminum steam to the concentration of 3 lower position of aluminium vapour source, reduces aluminium vapour source itself to the shadow of silicon wafer distance
It rings.
At least one uniform net 8 is equipped between the baffle 7 and objective table 9, the aperture of the uniform net 8 is greater than aluminium atom
Aperture further improves the uniformity of aluminium film be deposited.
9 bottom of objective table is equipped with motor 10, rotates for band dynamic object stage 9.
The objective table 9 is equipped with multiple silicon wafer lattice 11, is equipped with a piece of silicon wafer 1, each silicon wafer lattice in each silicon wafer lattice 11
11 bottoms are equipped with a micro-step motor 12, and the micro-step motor 12 drives the silicon wafer 1 in silicon wafer lattice 11 to rotate, loading
Platform 9 is rotation, each silicon wafer is also rotation, largely eliminates influence of the different location to aluminium film thickness, reduces position
Set different bring non-uniformities.
Embodiment 2:
The embodiment of the present disclosure 2 provide it is a kind of improve the evaporation of aluminum uniformity device, the aluminium vapour source be it is multiple, set respectively
Set the position on deposited chamber side wall close to vaporium roof, the aluminium vapour source and side wall loading downward at an angle
The position of platform, the baffle face aluminium vapour source setting, other structures setting are same as Example 1.
Embodiment 3:
The embodiment of the present disclosure 3 provides a kind of evaporated device, including the embodiment of the present disclosure 1 or raising as described in example 2
The device of the evaporation of aluminum uniformity.
Embodiment 4:
As shown in fig. 6, the embodiment of the present disclosure 4 provides a kind of method for improving the evaporation of aluminum uniformity, steps are as follows:
Front side of silicon wafer is put into upward in the indoor silicon wafer lattice of vapor deposition, and raffinal vapour source is lighted after vacuumizing, and generates aluminium
Steam；
At least one baffle is set between aluminium vapour source and objective table, stops aluminum steam to aluminium vapour source lower position
It concentrates, aluminum steam, which spreads and drops to deposited chamber periphery under the action of the baffle, forms aluminium film on silicon wafer.
At least one uniform net is set between baffle and silicon wafer, for improve aluminum steam drop to it is uniform on silicon wafer
Property.
Motor is set in objective table bottom, during evaporation of aluminum, motor band dynamic object stage rotates, and then in dynamic object stage
All silicon slice rotatings.
Multiple silicon wafer lattice are set on objective table, are equipped with a piece of silicon wafer in each silicon wafer lattice, each silicon wafer lattice bottom is equipped with
One micro-step motor, during evaporation of aluminum, micro-step motor drives the silicon slice rotating in silicon wafer lattice.
The foregoing is merely preferred embodiment of the present disclosure, are not limited to the disclosure, for the skill of this field
For art personnel, the disclosure can have various modifications and variations.It is all within the spirit and principle of the disclosure, it is made any to repair
Change, equivalent replacement, improvement etc., should be included within the protection scope of the disclosure.
Claims (10)
1. a kind of device for improving the evaporation of aluminum uniformity, which is characterized in that including deposited chamber, be equipped at least one in the deposited chamber
Aluminium vapour source and objective table, the aluminium vapour source are fixed on above objective table, and the objective table is steamed for placing silicon wafer, the aluminium
At least one baffle is equipped between vapour source and objective table, for stopping aluminum steam to the concentration of aluminium vapour source lower position.
2. improving the device of the evaporation of aluminum uniformity as described in claim 1, which is characterized in that set between the baffle and objective table
There is at least one uniform net, the aperture uniformly netted is greater than aluminium atom aperture.
3. improving the device of the evaporation of aluminum uniformity as described in claim 1, which is characterized in that the baffle is being set to aluminium vapour source just
Lower section or the setting of face aluminium vapour source.
4. improving the device of the evaporation of aluminum uniformity as described in claim 1, which is characterized in that the objective table bottom is equipped with electricity
Machine is rotated for band dynamic object stage.
5. improving the device of the evaporation of aluminum uniformity as claimed in claim 4, which is characterized in that the objective table is equipped with multiple silicon
Frame, each silicon wafer lattice are interior to be equipped with a piece of silicon wafer, and each silicon wafer lattice bottom is equipped with a micro-step motor, the miniature stepping
Motor drives the silicon slice rotating in silicon wafer lattice.
6. a kind of evaporated device, which is characterized in that including the dress described in any one of claims 1-6 for improving the evaporation of aluminum uniformity
It sets.
7. a kind of method for improving the evaporation of aluminum uniformity, which is characterized in that steps are as follows:
Front side of silicon wafer is put into upward in the silicon wafer lattice in deposited chamber on objective table, and raffinal vapour source is lighted after vacuumizing, raw
At aluminum steam；
At least one baffle is set between aluminium vapour source and objective table, stops collection of the aluminum steam to aluminium vapour source lower position
In, aluminum steam, which spreads and drops to deposited chamber periphery under the action of the baffle, forms aluminium film on silicon wafer.
8. as claimed in claim 7 improve the evaporation of aluminum uniformity method, which is characterized in that be arranged between baffle and silicon wafer to
A few uniform net, the uniformity dropped on silicon wafer for improving aluminum steam.
9. improving the method for the evaporation of aluminum uniformity as claimed in claim 7, which is characterized in that in objective table bottom, motor is set,
During evaporation of aluminum, motor band dynamic object stage rotates, and then with all silicon slice rotatings in dynamic object stage.
10. improving the method for the evaporation of aluminum uniformity as claimed in claim 7, which is characterized in that multiple silicon are arranged on objective table
Frame, each silicon wafer lattice are interior to be equipped with a piece of silicon wafer, and each silicon wafer lattice bottom is equipped with a micro-step motor, in evaporation of aluminum process
In, micro-step motor drives the silicon slice rotating in silicon wafer lattice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910412584.6A CN110042346B (en) | 2019-05-17 | 2019-05-17 | Device, equipment and method for improving aluminum steaming uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910412584.6A CN110042346B (en) | 2019-05-17 | 2019-05-17 | Device, equipment and method for improving aluminum steaming uniformity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110042346A true CN110042346A (en) | 2019-07-23 |
| CN110042346B CN110042346B (en) | 2020-02-04 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910412584.6A Active CN110042346B (en) | 2019-05-17 | 2019-05-17 | Device, equipment and method for improving aluminum steaming uniformity |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112481495A (en) * | 2020-09-26 | 2021-03-12 | 扬州洁晨机电科技有限公司 | A recovery unit for aluminum products |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201142064A (en) * | 2010-04-16 | 2011-12-01 | Jds Uniphase Corp | Ring cathode for use in a magnetron sputtering device |
| CN208201099U (en) * | 2018-06-01 | 2018-12-07 | 潍坊华光光电子有限公司 | A kind of vapor deposition uses correcting device |
-
2019
- 2019-05-17 CN CN201910412584.6A patent/CN110042346B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201142064A (en) * | 2010-04-16 | 2011-12-01 | Jds Uniphase Corp | Ring cathode for use in a magnetron sputtering device |
| CN208201099U (en) * | 2018-06-01 | 2018-12-07 | 潍坊华光光电子有限公司 | A kind of vapor deposition uses correcting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112481495A (en) * | 2020-09-26 | 2021-03-12 | 扬州洁晨机电科技有限公司 | A recovery unit for aluminum products |
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| Publication number | Publication date |
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| CN110042346B (en) | 2020-02-04 |
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Effective date of registration: 20240205 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250000 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Country or region after: China Address before: 250014 No. 51 Heping Road, Lixia District, Shandong, Ji'nan Patentee before: JINAN SEMICONDUCTOR Research Institute Country or region before: China |