TWI618170B - Substrate processing apparatus, control method of substrate processing apparatus, and recording medium - Google Patents

Abstract

The control device of the substrate processing apparatus of the present invention determines whether the setting value change condition is satisfied within each time of the processing schedule. When the set value change condition is satisfied at any time in the processing schedule, the control device sets the exhaust flow set value of the individual exhaust flow adjustment unit within the time when the set value change condition is established as a reference In the method with a large value, an individual exhaust schedule is created in which the exhaust flow setting value of the individual exhaust flow adjustment unit in each time of the processing schedule is specified. Moreover, the control device executes individual exhaust schedules in parallel with the processing schedule.

Description

Substrate processing apparatus, control method of substrate processing apparatus, and recording medium

The present invention relates to a substrate processing apparatus for processing a substrate, a method for controlling a substrate processing apparatus for controlling a substrate processing apparatus, and a computer-readable recording medium recorded with a program executed by the control apparatus of the substrate processing apparatus.

The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission display (FED), substrates for optical disks, substrates for magnetic disks, and optical disks Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

In the manufacturing steps of a semiconductor device or a liquid crystal display device, a substrate processing apparatus that processes a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used.

Patent Document 1 discloses a substrate processing apparatus including a control unit that monitors the pressure value of a pressure gauge that measures the pressure in the chamber body and performs feedback control. The feedback control is an electric pneumatic regulator ) To control the pressure of the fluid flowing in it.

Patent Document 2 discloses a substrate processing apparatus including a control unit that controls the dissolution or degassing of nitrogen in the variable concentration unit based on the measurement results of the first nitrogen concentration meter and the second nitrogen concentration meter. Feedback control.

[Prior technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2000-252275

[Patent Document 2] Japanese Patent Laid-Open No. 2004-79990

In substrate processing, it is more important to stabilize the flow rate such as the exhaust flow rate at an optimal value, but it is difficult to stabilize the flow rate with high accuracy.

In order to stabilize the flow rate, a conventional substrate processing apparatus uses a state of a measuring device such as a measuring device to perform feedback control. However, the feedback control of the flow rate has problems such as the time required until the flow rate is stabilized.

Therefore, one of the objects of the present invention is to shorten the time until the flow rate of the exhaust gas discharged from the processing unit is stabilized.

An embodiment of the present invention provides a substrate processing apparatus including: a processing unit that processes a plurality of substrates one by one; an exhaust unit that exhausts gas from the processing unit; and a control device as a computer It controls the above-mentioned processing unit and exhaust unit.

The processing unit includes a chamber having an internal space, a substrate holding unit that holds a substrate in the chamber, a processing fluid supply unit that supplies a processing fluid to a substrate held by the substrate holding unit, and a movable member. It can move between the positions separated from each other, that is, the origin position and the action position, in the above-mentioned chamber.

The exhaust unit includes: an individual exhaust pipe that guides the gas discharged from the chamber toward the exhaust treatment equipment; and an individual exhaust flow adjustment unit that adjusts toward the exhaust treatment equipment Exhaust flowing in the individual exhaust pipes mentioned above Of traffic.

The above control device executes the following steps: a processing schedule creation step, which creates a processing schedule that prescribes the actions of the above-mentioned processing unit when processing the substrate in a time series; a setting value change determination step, which determines the setting value change condition is Whether it is true or not, the set value change condition includes a position condition that the movable member is located at a position other than the origin position within each time of the processing schedule created in the processing schedule creation step; individual exhaust A schedule creation step, which prepares an individual exhaust schedule that specifies the exhaust flow setting value of the individual exhaust flow adjustment unit in each time of the above-mentioned processing schedule in the following manner: any of the above-mentioned processing schedules In a case where the above-mentioned change condition of the set value is satisfied within a time, the exhaust flow setting value of the individual exhaust flow adjustment unit within the time when the above-mentioned change of the value is established is set to be located at a position that is more than the movable member. The reference value at the time of the above-mentioned origin position is a large value; and the individual exhaust schedule execution steps, which Performing scheduling in the individual exhaust gas with the above-described process of scheduling simultaneously.

When the set value change condition includes a plurality of conditions (such as a position condition and a condition in which the processing fluid is discharged), the so-called "set value change condition is satisfied" means "at least one of the plurality of conditions included in the set value change condition. Established. "

The processing fluid supplied to the substrate by the processing fluid supply unit may be a processing liquid or a processing gas. The processing gas may also be a vapor of the processing agent (a gas generated from a liquid or solid processing agent). In addition to the vapor or mist of the processing agent, it may also be a gas containing a carrier gas (such as an inert gas).

According to the configuration of the above-mentioned one embodiment, a processing schedule for specifying the operation of the processing unit when processing the substrate in time series is prepared. On the one hand, referring to the processing schedule, on the other hand, making individual exhaust gas exhaust gas that sets the exhaust gas flow setting value of the individual exhaust gas flow adjustment unit. Cheng. Moreover, the individual exhaust schedule is performed simultaneously with the processing schedule.

The set value change condition includes a position condition that the movable member is located at a position other than the origin position. In the case where the movable member is planned at a position other than the origin position at any time in the processing schedule, that is, the time when the set value change condition is satisfied when the set value change condition is satisfied The exhaust flow rate setting value of the individual exhaust flow rate adjustment unit within is planned to be set to a value larger than a set value (reference value) when the movable member is located at the origin position. When the substrate processing apparatus includes a plurality of movable members, the reference value is a set value when all the movable members are located at the origin position.

When the movable member is actually located at a position other than the origin position, the exhaust flow setting value of the individual exhaust flow adjustment unit is set to a value larger than the reference value. Therefore, the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe becomes strong. In other words, the absolute value of the exhaust pressure (negative pressure) lower than the atmospheric pressure becomes larger. Therefore, even if the exhaust resistance (pressure loss) of the processing unit is increased according to the position of the movable member, the exhaust pressure is correspondingly increased, so that fluctuations in the flow rate of the exhaust gas discharged from the processing unit can be suppressed.

Furthermore, the individual exhaust schedule and the processing schedule are executed simultaneously. That is, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit is not changed after the flow rate of the gas discharged from the processing unit is actually changed, but is adjusted before the flow rate change occurs. Therefore, compared with the case where the feedback control is performed, the time until the exhaust flow rate becomes stable can be shortened.

The individual exhaust schedule that defines the exhaust flow setting value of the individual exhaust flow adjustment unit is made based on the processing schedule. That is, when it is convenient to execute the same formula, there are also cases where the parameters affecting the exhaust flow rate are different. Therefore, by creating an individual exhaust schedule based on each processing schedule, the exhaust flow rate can be optimized regardless of the substrate processing.

In the above-mentioned embodiment, the conditions for changing the set value may be further improved. The step includes a processing fluid discharging condition under which the processing fluid supply unit is discharging the processing fluid.

According to this configuration, even in the case of planning by discharging the processing fluid, it is planned to increase the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe.

When the processing fluid is discharged (particularly when the processing liquid is discharged), mist is likely to be generated in the processing unit. If the mist adheres to the substrate, the substrate may be contaminated. In addition, there is a case where the fog changes to particles that are one of the causes of contamination of the substrate, and the particles are suspended in the processing unit. Therefore, by actually increasing the exhaust pressure when the processing fluid is discharged, the mist can be efficiently discharged from the processing unit, and the diffusion range of the mist can be reduced. Therefore, it is possible to reduce the contamination of the substrate caused by the adhesion of fog or particles.

In the above-mentioned one embodiment, the processing fluid supply unit may further include a chemical liquid nozzle that discharges a chemical solution as a processing fluid toward a substrate held by the substrate holding unit. The setting value change condition may further include a chemical liquid discharge start condition for the medical liquid nozzle to start discharging the chemical liquid.

In this configuration, the above-mentioned individual exhaust schedule creation step may also include the step of producing the above-mentioned individual exhaust schedule in the following manner: a case where the setting value change condition is satisfied at any time in the above-mentioned processing schedule The above-mentioned set value change condition is set to an exhaust flow rate setting value of the individual exhaust flow rate adjustment unit within a time period established, and is set to a value larger than the reference value, and since the above-mentioned medicinal solution discharge start condition is satisfied Earlier, the exhaust flow rate setting value of the individual exhaust flow rate adjusting unit is set to a value larger than the reference value.

According to this configuration, in the case of planning by discharging the chemical liquid as a processing fluid, the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe is also enhanced. Way to plan. When the liquid medicine is discharged, a mist of the liquid medicine is easily generated in the processing unit. Furthermore, the mist of the chemical liquid is more likely to contaminate the substrate than the mist of the cleaning liquid such as pure water. Therefore, since the discharge pressure is actually increased when the chemical solution is actually discharged, the mist of the chemical solution can be efficiently discharged from the processing unit, thereby reducing the diffusion range of the mist. Therefore, it is possible to reduce the contamination of the substrate caused by the adhesion of fog or particles.

Furthermore, it is planned to increase the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe from the time when the conditions for starting the discharge of the chemical solution are established, that is, before the discharge of the chemical solution is started. In addition, it is planned to maintain a state in which the exhaust pressure is increased during the continuous discharge of the medicinal solution. Therefore, since the discharge of the medicinal solution is started in a state where the exhaust pressure is increased, the mist of the medicinal solution can be efficiently discharged immediately after the medicinal solution is ejected. Thereby, the residual amount of mist of the medicinal solution in the chamber can be reduced, and contamination of the substrate due to the adhesion of mist or particles can be reduced.

In the above configuration, the step of preparing the individual exhaust schedule may also include the step of preparing the individual exhaust schedule in the following manner: a case where the setting value change condition is satisfied at any time in the processing schedule , Setting the above-mentioned change condition of the set value to the exhaust flow setting value of the individual exhaust flow adjustment unit within the time when it is established, and setting it to a value larger than the reference value, and until the above-mentioned medicinal solution discharge start condition is satisfied After that time, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit is set to a value larger than the reference value.

According to this configuration, it is planned to increase the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe after the time when the end condition for discharging the chemical solution is satisfied, that is, after stopping the discharge of the chemical solution. Therefore, the mist of the medicinal solution suspended in the chamber after the discharge of the medicinal solution is stopped can be surely discharged. Thereby, the residual amount of mist of the medicinal solution in the chamber can be reduced, and contamination of the substrate due to the adhesion of mist or particles can be reduced.

In one embodiment, the substrate holding unit may include a rotary chuck that holds the substrate while rotating it in the chamber. The above-mentioned setting value changing conditions may further include a substrate rotation condition in which the substrate is rotated.

According to this configuration, in the case of planning by rotating the chuck to rotate the substrate, it is planned to increase the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe.

When the substrate to which the processing liquid is attached is rotated, the processing liquid is scattered from the substrate, and thus mist is easily generated. Therefore, by increasing the exhaust pressure when the substrate is actually rotated, the mist can be efficiently discharged from the processing unit, thereby reducing the diffusion range of the mist. Therefore, it is possible to reduce the contamination of the substrate caused by the adhesion of fog or particles.

In the above embodiment, the substrate rotation condition may include a drying execution condition where the substrate is rotated at a drying speed higher than a rotation speed of the substrate when the processing fluid supply unit discharges a processing fluid (for example, a processing liquid).

According to this configuration, when the substrate is rotated at the drying speed, the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe is increased.

The drying speed is a rotation speed higher than the rotation speed of the substrate when the processing fluid supply unit discharges the processing fluid. If the rotation speed of the substrate is increased, the centrifugal force acting on the processing liquid attached to the substrate is also increased, so the amount of the processing liquid scattered from the substrate is increased. Therefore, when the substrate is rotated at a drying speed, fog is easily generated. Therefore, by increasing the exhaust pressure when the substrate is rotated at a drying speed, the mist can be efficiently discharged from the processing unit, and the diffusion range of the mist can be reduced.

In the above embodiment, the movable member may further include a blocking plate, which can be located above the substrate holding unit at a position of the origin of the blocking plate and between the position of the origin of the blocking plate and the substrate holding unit. Between the operating position of the interrupter, between the above Move inside the chamber. The condition for changing the set value may further include a condition that the interruption plate is moved from the operating position of the interruption plate to an original position of the interruption plate.

According to this configuration, when the interruption plate is planned to be moved upward, it is also planned to increase the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe.

If the interrupting plate rises from the operating position of the interrupting plate to the original position of the interrupting plate, the interrupting plate is separated from the substrate, and the interval between the interrupting plate and the substrate is enlarged. If the rising speed of the interrupting plate is large, the air pressure between the interrupting plate and the substrate is reduced, and the ambient gas in the chamber is sucked between the interrupting plate and the substrate. Therefore, there is a possibility that mist or particles suspended around the substrate adhere to the substrate.

If the rising speed of the interrupter is reduced, it can be considered that the intake of ambient gas due to the generation of negative pressure is reduced. However, if the rising speed of the interrupting plate is slow, the time required for processing the substrate increases, so there is a possibility that the processing amount of the substrate processing apparatus (the number of substrates processed per unit time) may decrease.

If the exhaust pressure is increased when the interval between the interrupter and the substrate is enlarged, the ambient gas around the substrate is forcibly sucked to the side of the individual exhaust pipe, so the ambient gas is prevented from entering between the interrupter and the substrate. Therefore, it is possible to suppress or prevent the ambient gas around the substrate from contacting the substrate without reducing the rising speed of the interrupting plate. Therefore, it is possible to reduce the contamination of the substrate while maintaining the throughput.

In the above embodiment, the control device may further include a memory device that stores a table, the table includes a plurality of points allocated for each position of the movable member, and a process for the above processing. The fluid supply unit is assigned a plurality of points for each discharge state of the processing fluid. The above control device may further perform the following total value calculation step: at any time in the above processing schedule, the above setting When the fixed value change condition is satisfied, the total value of points in each time of the processing schedule is obtained based on the above table. The above-mentioned individual exhaust schedule creation step may also include the step of preparing the above-mentioned individual exhaust schedule in the following manner: at any time in the above-mentioned processing schedule, the above-mentioned set value change condition is satisfied, and the above-mentioned set value is set The change condition is that the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit within the time of establishment is set to a value larger than the reference value according to the size of the total value.

According to this configuration, a table including a plurality of points is stored in the memory device of the control device. The plurality of points are allocated for each working condition of the processing unit. Specifically, the table includes a plurality of points respectively assigned to an origin position and an operation position of the movable member, and a plurality of points respectively assigned to a state in which the processing fluid is being discharged and a state in which the discharge is stopped.

When the setting value change condition is satisfied at any time in the processing schedule, the total value of points in each time of the processing schedule is calculated. In addition, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit in each time of the processing schedule is planned to be set to a value larger than the reference value based on the total value of the points. Therefore, the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe is adjusted according to the working condition of the processing unit. Therefore, the airflow in the chamber can be brought close to an ideal state.

In one embodiment, the substrate holding unit may include a rotary chuck that holds the substrate while rotating it in the chamber. The above table may further include a plurality of points allocated for each rotation state of the substrate.

According to this configuration, the table of the memory device stored in the control device includes a plurality of points allocated for each position of the movable member and a plurality of points allocated for each discharge state of the processing fluid. Distribute in the rotation of the substrate The number of points in the state and the rotation stop state. Therefore, the force (exhaust pressure) for exhausting the gas in the chamber into the individual exhaust pipe is adjusted to a size that also takes into account the rotation state of the substrate. Therefore, the airflow in the chamber can be brought close to an ideal state.

In the above-mentioned embodiment, the plurality of points allocated to each discharge state of the processing fluid from the processing fluid supply unit may include a state corresponding to a state in which the cleaning liquid as the processing fluid is discharged. The number of points of the cleaning liquid to be dispensed, and the number of points of the chemical liquid to be dispensed with respect to the state where the chemical liquid as the processing fluid is discharged, and larger than the number of points of the cleaning liquid.

According to this configuration, the table of the memory device memorized in the control device includes the points of the cleaning liquid assigned to the state during the discharge of the cleaning liquid, and the points of the chemical liquid assigned to the state during the discharge of the medical liquid. The point of the medicinal solution is greater than that of the cleaning solution. Therefore, if the other working conditions of the processing unit are the same, the total value of the points when the liquid medicine is discharged is greater than the total value of the points when the cleaning liquid is discharged.

As described above, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit in each time of the processing schedule is planned to be set to a value greater than the reference value based on the total value of the points. If the total value of the points is large, the force (exhaust pressure) for exhausting the gas in the chamber to the individual exhaust pipe is strong, so the gas in the chamber is surely discharged.

Compared with the mist of cleaning liquid such as pure water, the mist of chemical liquid is more likely to contaminate the substrate. Therefore, since the discharge pressure is actually increased when the chemical solution is actually discharged, the mist of the chemical solution can be efficiently discharged from the processing unit, thereby reducing the diffusion range of the mist. Therefore, it is possible to reduce the contamination of the substrate caused by the adhesion of fog or particles.

In the above-mentioned embodiment, the table may also include more than one threshold value, which classifies the total value of the points into a plurality of groups according to the size of the total value of the points, and the plurality of groups are A plurality of added values of different sizes are allocated respectively. The control device may further perform a group determination step of determining the total value of the points obtained in the total value calculation step according to the table to which of the plurality of groups. The above-mentioned individual exhaust schedule creation step may also include the step of producing the above-mentioned individual exhaust schedule in the following manner: at any time in the above-mentioned processing schedule, the above-mentioned setting value change condition is satisfied, so that in the above setting The value change condition is the exhaust flow setting value of the above-mentioned individual exhaust flow adjustment unit within the time of establishment, forming a total value that is only increased by the above-mentioned reference value and allocated to the points obtained in the above-mentioned total value calculation step The above added value of the above-mentioned group to which it belongs.

According to this configuration, one or more threshold values for classifying the total value of points into a plurality of groups are included in a table of a memory device stored in the control device. Which of the plurality of groups the total value of points belongs to is obtained based on the table.

That is, when the total value of points in each time of the schedule is different, if the group is the same, the added value allocated to the group is also added to the reference value of the individual exhaust flow adjustment unit. In other words, even if the total value of the points is different, if the group to which the total value belongs is the same, the exhaust flow setting value of the individual exhaust flow adjustment unit is not changed. Therefore, compared with the case where the intensity of the exhaust gas is changed compared with each time the total value of points is changed, it is possible to prevent the control from being complicated.

In one embodiment, the substrate processing apparatus may include a plurality of the processing units. The exhaust unit may also include a plurality of the individual exhaust pipes, which respectively correspond to the plurality of the processing units, and direct the gas discharged from the chambers of the plurality of the processing units toward the exhaust. The air treatment equipment guides; the plurality of individual exhaust gas flow adjustment units, which respectively correspond to the plurality of individual exhaust pipes, and are adjusted toward the exhaust treatment equipment in the plurality of individual exhaust pipes. The flow of flowing exhaust gas; a collection exhaust pipe connected to a plurality of the above Each of the individual exhaust pipes; and a collective exhaust flow rate adjusting unit that adjusts a flow rate of exhaust gas flowing in the collective exhaust pipe toward the exhaust treatment equipment.

The above control device may further perform the following steps: a source pressure change judgment step, which judges whether the source pressure change condition is within each time of the individual exhaust schedule created in the individual exhaust schedule creation step. If the source pressure change condition is true, the exhaust flow setting value of any of the plurality of individual exhaust flow adjustment units described above is greater than the reference value; the collective exhaust schedule production steps are produced in the following manner. Collective exhaust schedule with specified exhaust flow setting value of the collective exhaust flow adjustment unit at each time of the individual exhaust schedule: The source pressure change conditions at any time in the individual exhaust schedule For the establishment, the exhaust flow setting value of the above-mentioned integrated exhaust flow adjustment unit within the time when the above-mentioned source pressure change condition is satisfied is set to be more than the exhaust flow setting value of each exhaust flow adjustment unit. The set value at the above reference value, that is, the source pressure reference value is a large value; and the collective exhaust schedule execution step, which is the same as the individual exhaust schedule above Executing the set of exhaust scheduling mode.

According to this configuration, the gases in the plurality of processing units are discharged to the plurality of individual exhaust pipes, respectively. Exhaust gas that flows to the downstream side of the exhaust treatment equipment in each individual exhaust pipe is discharged into the collective exhaust pipe. The flow rate of the exhaust gas flowing in the collective exhaust pipe toward the exhaust treatment equipment is adjusted by the collective exhaust flow adjustment unit.

The collective exhaust schedule that specifies the exhaust flow set value of the collective exhaust flow adjustment unit is made on the one hand with reference to the individual exhaust schedule that specifies the exhaust flow set value of the individual exhaust flow adjustment unit. Moreover, the collective exhaust schedule is performed simultaneously with the individual exhaust schedule.

When at any time in the individual exhaust schedule, the exhaust flow setting value of any individual exhaust flow adjustment unit is greater than the reference value, the source pressure change condition is established At that time, the exhaust flow set value of the collective exhaust flow adjustment unit within the time when the source pressure change condition is satisfied is the set value when the exhaust flow set value of each individual exhaust flow adjustment unit is set to a reference value (source Press the reference value).

If the exhaust flow setting value of any individual exhaust flow adjustment unit is greater than the reference value, there may be a case where the exhaust pressure in the collective exhaust pipe decreases, and the influence of the decrease in the exhaust pressure may spread to other processing units. Therefore, by making the set value of the exhaust flow rate of the collective exhaust flow rate adjustment unit larger than the reference value of the source pressure, it is possible to suppress or prevent a decrease in the flow rate of exhaust gas discharged from other processing units. This can suppress or prevent pressure fluctuations in other processing units.

Furthermore, the collective exhaust schedule is performed simultaneously with the individual exhaust schedule. That is, the exhaust flow rate setting value of the collective exhaust flow rate adjustment unit is not changed after the actual flow rate of the exhaust gas flowing in the collective exhaust pipe is changed, but is adjusted before the change in the flow rate occurs. Therefore, compared with the case where the feedback control is performed, the time until the exhaust flow rate becomes stable can be shortened.

In one embodiment, the substrate processing apparatus may include a plurality of the processing units. The exhaust unit may also include a plurality of the individual exhaust pipes, which respectively correspond to the plurality of the processing units, and direct the gas discharged from the chambers of the plurality of the processing units toward the exhaust. The air treatment equipment guides; the plurality of individual exhaust gas flow adjustment units, which respectively correspond to the plurality of individual exhaust pipes, and are adjusted toward the exhaust treatment equipment in the plurality of individual exhaust pipes. The flow rate of flowing exhaust gas; a collection exhaust pipe connected to each of the plurality of individual exhaust pipes; and a collection exhaust flow adjustment unit that adjusts toward the exhaust treatment equipment and is in the collection exhaust pipe. The flow rate of the flowing exhaust gas; and a collective flow meter that detects the exhaust gas flowing in the collective exhaust pipe toward the exhaust processing equipment; Of traffic. The above control device may also control the collective exhaust flow rate adjustment unit in such a manner that the exhaust flow rate in the collective exhaust pipe obtained according to the detection value of the collective flow meter is close to that of each individual exhaust flow rate adjustment unit The flow reference value is the value when the exhaust flow setting value is the reference value.

With this configuration, the exhaust flow rate in the collective exhaust pipe is obtained based on the detection value of the collective flow meter. The collective exhaust pipe is connected to each of a plurality of individual exhaust pipes. When the flow rate of the exhaust gas in the collective exhaust pipe changes, the flow rate of the exhaust gas flowing in each individual exhaust pipe also changes. If the exhaust flow rate in the collective exhaust pipe fluctuates, the control device performs feedback control of the collective exhaust flow rate adjustment unit so that the exhaust flow rate in the collective exhaust pipe approaches the flow reference value. Thereby, the variation of the flow rate of the exhaust gas discharged from each processing unit can be reduced, and the pressure fluctuation in each processing unit can be suppressed or prevented.

In one embodiment, the collective exhaust flow adjustment unit may further include a collective damper that opens and closes the collective exhaust pipe, and a blower that forms an airflow flowing toward the exhaust treatment equipment in the collective exhaust pipe. At least one of them.

According to this configuration, at least one of the collective damper and the blower is provided in the collective exhaust flow adjustment unit.

If the collection damper increases or decreases the flow path area of the collection exhaust pipe, the flow rate of the exhaust gas flowing in the collection exhaust pipe increases or decreases. In addition, if the airflow flowing toward the exhaust treatment equipment is formed in the collecting exhaust pipe by the air blower, the exhaust of the gas from the collecting exhaust pipe is promoted, so the flow rate of the exhaust gas flowing in the collecting exhaust pipe increases. . Thereby, the flow rate of the exhaust gas flowing in the collection exhaust pipe toward the exhaust treatment equipment is adjusted.

Furthermore, if the blower blows air, the gas in the collective exhaust pipe is forcibly discharged by the blower, so the exhaust pressure in the collective exhaust pipe is increased (the absolute value of the exhaust pressure becomes larger). Therefore, even when the attraction of exhaust equipment is insufficient, The fan is operated to keep the exhaust pressure in the collecting exhaust pipe to a fixed pressure. This makes it possible to suppress or prevent pressure fluctuations in each processing unit.

In the above-mentioned embodiment, the movable member may form a flow path of a gas flowing in the chamber toward the individual exhaust pipe in the chamber. The operating position is a position where the pressure loss in the flow path in the chamber is greater than when the movable member is located at the origin position.

According to this configuration, the flow path of the gas flowing inside the chamber toward the individual exhaust pipe is formed in the chamber by the movable member. Therefore, if the movable member moves inside the chamber, the shape of the flow path changes, so the exhaust resistance of the processing unit changes. Therefore, the flow rate of the gas discharged from the processing unit can be stabilized by changing the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit according to the position of the movable member.

In the above embodiment, the movable member may include at least one of a blocking plate and a splash-proof protective plate, and the blocking plate can be located at the origin of the blocking plate above the substrate holding unit and the above. The splash-proof protective plate can move between the original position of the interrupting plate and the operating position of the interrupting plate between the substrate holding unit, and the splash-proof protective plate can be lower than the substrate held by the substrate holding unit. The protective plate origin moves between the position of the protective plate origin and the operating position of the protective plate around the substrate held by the substrate holding unit. The origin position of the interrupter plate and the origin position of the protective plate are both the origin position. Similarly, the operating position of the blocking plate and the operating position of the protective plate are both operating positions.

Another embodiment of the present invention provides a method for controlling a substrate processing device, which is executed by the above-mentioned control device of the substrate processing device. The substrate processing device is provided with a processing unit that is configured to process a plurality of substrates one by one. Processing; an exhaust unit that exhausts the gas in the processing unit; and a computer control device that controls the processing unit and the exhaust unit.

The processing unit includes a chamber having an internal space, a substrate holding unit that holds a substrate in the chamber, a processing fluid supply unit that supplies a processing fluid to a substrate held by the substrate holding unit, and a movable member. It can move between the positions separated from each other, that is, the origin position and the action position, in the above-mentioned chamber.

The exhaust unit includes: an individual exhaust pipe that guides the gas discharged from the chamber toward the exhaust treatment equipment; and an individual exhaust flow adjustment unit that adjusts toward the exhaust treatment equipment The flow rate of the exhaust gas flowing in the individual exhaust pipes.

The control method of the substrate processing apparatus includes: a processing schedule creation step, which creates a processing schedule that prescribes the actions of the processing unit when processing the substrate in a time series; and a setting value change determination step, which determines that the setting value is changed The condition is whether it is true or not. The set value change condition includes a position condition that the movable member is located at a position other than the origin position within each time of the processing schedule created in the processing schedule creation step; individual Exhaust schedule creation step, which prepares an individual exhaust schedule that specifies the exhaust flow setting value of the individual exhaust flow adjustment unit in each time of the above-mentioned processing schedule in the following manner: If at any time during the process the above-mentioned set value change condition is satisfied, the exhaust flow set value of the individual exhaust flow adjustment unit within the time when the set value change condition is established is set to be higher than the movable member The setting value when it is at the above origin position, that is, the reference value is a large value; and the individual exhaust schedule execution steps , Which performs scheduling in the individual exhaust gas simultaneously with the above-described process scheduling mode. According to this method, the same effects as those described above can be exhibited.

Still another embodiment of the present invention provides a recording medium that records a computer program that is executed by a control device of a substrate processing apparatus related to the control method of a substrate processing apparatus described above, and is a computer-readable person. , And recorded to make as The way in which the control device of the computer executes the control method of the substrate processing device is incorporated into a computer program having a group of steps.

The above and other objects, features, and effects in the present invention will be made clear by the description of the embodiments described below with reference to the accompanying drawings.

1‧‧‧ substrate processing device

2‧‧‧load port

3‧‧‧ processing unit

4‧‧‧control device

5‧‧‧ chamber

6‧‧‧ partition

7‧‧‧FFU

8‧‧‧ rotating chuck

9‧‧‧ chuck pin

10‧‧‧ rotating base

11‧‧‧ rotating motor

12‧‧‧The first liquid medicine nozzle

13‧‧‧ 2nd liquid medicine nozzle

14‧‧‧Cleaning liquid nozzle

15‧‧‧ treatment liquid capture member

16‧‧‧ Splash-proof protective plate

17‧‧‧ opening of protective plate

18‧‧‧ Upper Capture Department

19‧‧‧ Upper Guide

20‧‧‧ lower capture department

21‧‧‧ Containment Department

22‧‧‧ cup

23‧‧‧ bottom wall

24‧‧‧ inner wall

25‧‧‧ outer wall

26‧‧‧Drain

27‧‧‧Exhaust

28‧‧‧ Recovery Ditch

29‧‧‧ protective plate lifting unit

30‧‧‧ Interrupter

31‧‧‧ center opening

32‧‧‧ mandrel

33‧‧‧ support arm

34‧‧‧ Interrupter lift unit

35‧‧‧Air valve

36‧‧‧Gas piping

37‧‧‧The first liquid medicine piping

38‧‧‧The first liquid medicine valve

39‧‧‧ 1st liquid medicine nozzle moving unit

40‧‧‧Second liquid medicine piping

41‧‧‧Second liquid medicine valve

42‧‧‧ 2nd liquid medicine nozzle moving unit

43‧‧‧Cleaning liquid pipe

44‧‧‧Cleaning liquid valve

45‧‧‧ Cleaning liquid nozzle moving unit

46‧‧‧Discharge unit

47‧‧‧ Recovery Piping

48‧‧‧ discharge piping

49‧‧‧Gas-liquid separation box

50‧‧‧ drainage pipe

51‧‧‧ individual exhaust pipe

52‧‧‧Individual flowmeter

53‧‧‧ Individual dampers

54‧‧‧ damper body

55‧‧‧Valve body

56‧‧‧Actuator

57‧‧‧Position sensor

58‧‧‧ Individual control device

59‧‧‧Opening degree calculation department

60‧‧‧Damper Drive

61‧‧‧Opening degree control department

62‧‧‧collection exhaust pipe

63‧‧‧Gathering damper

64‧‧‧collection control device

65‧‧‧collection flowmeter

65a‧‧‧The first integrated flow meter

65b‧‧‧The second collection flowmeter

66‧‧‧blower

67‧‧‧Computer Body

68‧‧‧ Peripherals

69‧‧‧CPU

70‧‧‧Master memory device

71‧‧‧ auxiliary memory device

72‧‧‧Reading device

73‧‧‧communication device

74‧‧‧ recipe

75‧‧‧Set value change condition

76‧‧‧source pressure change conditions

77‧‧‧Table

78‧‧‧point table

79‧‧‧ Classification

80‧‧‧ Processing Schedule Production Department

81‧‧‧ Processing schedule execution department

82‧‧‧Setting value change judgment section

83‧‧‧Total value calculation department

84‧‧‧Group determination department

85‧‧‧ Individual exhaust schedule production department

86‧‧‧ Individual exhaust schedule execution department

87‧‧‧ Individual feedback execution department

88‧‧‧Source pressure change judgment section

89‧‧‧collection exhaust schedule production department

90‧‧‧collection exhaust schedule execution department

91‧‧‧Integrated feedback control execution department

A1‧‧‧axis of rotation

C‧‧‧ carrier

CR‧‧‧ Central Robot

D1‧‧‧Arrangement direction

H‧‧‧hand

HC‧‧‧ host computer

IR‧‧‧ Indexing Robot

M‧‧‧ Removable Media

P‧‧‧Program

W‧‧‧ substrate

FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing the inside of a processing unit when the processing unit is viewed horizontally.

FIG. 3 is a schematic diagram showing a processing unit and a discharge unit.

Fig. 4 is a block diagram showing an exhaust system of a substrate processing apparatus.

Fig. 5 is a block diagram showing the physical configuration of the control device.

Fig. 6 is a block diagram showing the functional configuration of the control device.

FIG. 7 is a diagram showing a point table stored in the control device.

FIG. 8 is a diagram showing a classification table stored in the control device.

FIG. 9 is a diagram showing an example of a processing schedule and an individual exhaust schedule created by a control device.

FIG. 10 is a diagram showing an example of a collective exhaust schedule created by a control device.

FIG. 11 is a flowchart showing a flow of preparation and execution of a processing schedule.

FIG. 12 is a flowchart showing a flow when executing each step planned in the processing schedule.

FIG. 13 is a flowchart showing a flow of making and executing an individual exhaust schedule.

FIG. 14 is a flowchart showing a flow of production and execution of a collective exhaust schedule.

As shown in FIG. 1, the substrate processing apparatus 1 is a single-chip apparatus that processes a wafer-like substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of The load port 2 holds a plurality of carriers C; and a plurality of (for example, 12) processing units 3 that process the substrate W. The substrate processing apparatus 1 further includes an indexer robot IR as a transfer robot that carries in and out substrates W to and from the load port 2, and a central robot CR as a transfer robot that performs substrates to the processing unit 3 W is carried in and out; and a control device 4 that controls the substrate processing device 1.

As shown in FIG. 1, the load port 2 as a container holding unit is disposed at a position away from the processing unit 3 in the horizontal direction. The plurality of load ports 2 hold the plurality of carriers C in such a manner that the plurality of carriers C are arranged in the horizontal arrangement direction D1. The carrier C is a container capable of accommodating the plurality of substrates W in such a manner that the plurality of substrates W are stacked up and down at intervals with a horizontal posture.

As shown in FIG. 1, the indexing robot IR includes two hands H that are U-shaped in a plan view. Two hands H are arranged at different heights. Each hand H supports the substrate W in a horizontal posture. The indexing robot IR moves the hand H in at least one of a horizontal direction and a vertical direction. Furthermore, the indexing robot IR changes the direction of the hand H by rotating (rotating) around the vertical axis. The indexing robot IR moves along the path passing the transfer position (the position shown in FIG. 1) in the arrangement direction D1. The transfer position is a position facing the direction orthogonal to the indexing robot IR and the central robot CR and the arrangement direction D1 in a plan view.

The indexing robot IR moves the hand H in at least one of the horizontal direction and the vertical direction, so that the hand H faces the central robot CR or an arbitrary carrier C. The indexing robot IR performs a carrying-in operation of carrying the substrate W into the carrier C, and a carrying-out operation of carrying the substrate W from the carrier C. In addition, the indexing robot IR and the central robot CR perform a transfer operation to move the substrate W from one of the indexing robot IR and the central robot CR to the other at the transfer position.

As shown in Figure 1, the central robot CR includes a U-shaped 2 in plan view. Hands H. Two hands H are arranged at different heights. Each hand H supports the substrate W in a horizontal posture. The central robot CR moves the hand H in at least one of a horizontal direction and a vertical direction. Furthermore, the central robot CR changes the direction of the hand H by rotating (rotating) around the vertical axis. The central robot CR is surrounded by a plurality of processing units 3 in a plan view. The plurality of processing units 3 are formed with four towers arranged so as to surround the central robot CR in a plan view. Each tower includes three processing units 3 stacked on top and bottom.

The central robot CR causes the hand H to face the arbitrary processing unit 3 and the indexing robot IR by moving the hand H in at least one of the horizontal direction and the vertical direction. Then, the central robot CR performs a carrying-in operation of carrying in the substrate W to the processing unit 3 and a carrying-out operation of carrying out the substrate W from the processing unit 3. In addition, the central robot CR and the indexing robot IR perform a handover operation of moving the substrate W from one of the indexing robot IR and the central robot CR to the other.

When processing a plurality of substrates W, the control device 4 controls the indexing robot IR, the central robot CR, and the processing unit 3 to cause the substrate processing device 1 to repeat the following series of operations.

Specifically, the control device 4 moves the indexing robot IR out of the unprocessed substrate W held in the carrier C of the load port 2. Thereafter, the control device 4 moves the unprocessed substrate W from the indexing robot IR to the central robot CR. Then, the control device 4 causes the central robot CR to carry the unprocessed substrate W to any processing unit 3. Thereafter, the control device 4 causes the processing unit 3 to process the unprocessed substrate W.

The control device 4 moves the central robot CR out of the processed substrate W in the processing unit 3. Thereafter, the control device 4 moves the processed substrate W from the central robot CR to the indexing robot IR. Then, the control device 4 causes the indexing robot IR to carry the processed substrate W to any carrier C. In this way, with the processing unit 3 The unprocessed substrate W processed in the carrier C held by the load port 2 is processed, and the substrate W processed by the processing unit 3 is contained in the carrier C held by the load port 2.

As shown in FIG. 2, each processing unit 3 is a single-chip unit that processes a plurality of substrates W one by one using a processing liquid. Each processing unit 3 includes: a box-shaped chamber 5 having an internal space; and a rotary chuck 8 that holds a piece of substrate W in a horizontal posture in the chamber 5 and surrounds the substrate W with lead passing through the center of the substrate W The vertical rotation axis A1 rotates. Each processing unit 3 further includes a plurality of nozzles (a first chemical liquid nozzle 12, a second chemical liquid nozzle 13, and a cleaning liquid nozzle 14), and the processing liquid is discharged toward the substrate W held on the rotary chuck 8; The blocking plate 30 is arranged above the rotary chuck 8 in a horizontal posture; and a cylindrical processing liquid capturing member 15 surrounds the rotary chuck 8. The blocking plate 30 and the treatment liquid capture member 15 are examples of movable members that face the gas flow path formed in the chamber 5 in the chamber 5 as the exhaust port 27 as an exhaust port.

As shown in FIG. 2, the chamber 5 is provided with a box-shaped partition wall 6 that accommodates a rotating chuck 8 and the like; and an FFU 7 (fan. Filter. Unit 7) as an air supply unit, which is spaced from the upper part of the partition wall 6. Clean air (air filtered by a filter) is blown into the partition wall 6. FFU7 is arranged above the partition wall 6. FFU7 blows clean air downward from the ceiling of partition wall 6 into chamber 5 at a fixed flow rate. As a result, a downflow (downflow) flowing downward in the chamber 5 is formed by the FFU 7. The substrate W is processed in a state where a downflow is formed in the chamber 5.

As shown in FIG. 2, the rotating chuck 8 includes: a plurality of chuck pins 9, which are pressed against the peripheral end surface of the substrate W; and a circular plate-shaped rotating base 10, which can be surrounded by the plurality of chuck pins 9. The rotation line A rotates; and a rotation motor 11 that rotates the chuck pin 9 and the rotation base 10 about a rotation axis A1. The rotary chuck 8 is not limited to a mechanical chuck having a plurality of chuck pins 9, and may be a surface (lower surface) of the substrate W as a non-device forming surface being adsorbed on the rotating substrate 10 as an adsorption substrate Surface while keeping substrate W as water Flat vacuum chuck.

As shown in FIG. 2, the plurality of nozzles include a first chemical liquid nozzle 12 that discharges a first chemical liquid toward the substrate W, a second chemical liquid nozzle 13 that discharges a second chemical liquid toward the substrate W, and a cleaning liquid nozzle 14 , Which discharges the cleaning solution toward the substrate W.

As shown in FIG. 2, the processing unit 3 includes a first chemical liquid pipe 37 connected to the first chemical liquid nozzle 12 and a first chemical liquid valve 38 interposed in the first chemical liquid pipe 37. Similarly, the processing unit 3 includes a second chemical liquid pipe 40 connected to the second chemical liquid nozzle 13 and a second chemical liquid valve 41 interposed in the second chemical liquid pipe 40. The processing unit 3 further includes a cleaning liquid pipe 43 connected to the cleaning liquid nozzle 14 and a cleaning liquid valve 44 interposed in the cleaning liquid pipe 43.

When the first chemical liquid valve 38 is opened, the first chemical liquid from the first chemical liquid supply source is discharged from the first chemical liquid nozzle 12. Similarly, when the second chemical liquid valve 41 is opened, the second chemical liquid from the second chemical liquid supply source is discharged from the second chemical liquid nozzle 13. When the cleaning liquid valve 44 is opened, the cleaning liquid from the cleaning liquid supply source is discharged from the cleaning liquid nozzle 14.

An example of the first chemical solution includes sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), and organic bases (such as tetramethyl ammonium hydroxide (tetramethyl ammonium hydroxide, TMAH), etc.), a surfactant, and a preservative.

Similarly, an example of the second chemical solution includes sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), and organic bases (such as TMAH: Methyl ammonium, etc.), surfactant, and preservative. The first medicinal solution and the second medicinal solution may be different medicinal solutions, or they may be the same medicinal solution.

An example of the cleaning liquid is pure water (deionized water). clear The washing liquid is not limited to pure water, and may be any of isopropyl alcohol (IPA, isopropyl alcohol), carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water at a dilution concentration (for example, about 10 to 100 ppm). By.

As shown in FIG. 2, the processing unit 3 includes a first chemical liquid nozzle moving unit 39 that places the first chemical liquid nozzle 12 at a processing position (the position of the first chemical liquid nozzle 12 shown in FIG. 2) and a retreat position. Second chemical liquid nozzle moving unit 42, which moves the second chemical liquid nozzle 13 between the processing position and the retreat position (the position of the second chemical liquid nozzle 13 shown in FIG. 2); and the cleaning liquid nozzle moves A unit 45 that moves the cleaning liquid nozzle 14 between the processing position and the retreat position. The processing position is a position where the processing liquid discharged from the nozzle is deposited on the upper surface of the substrate W, and the retreat position is a position where the nozzle is retracted from above the substrate W.

As shown in FIG. 2, the interrupting plate 30 has a disk shape having an outer diameter larger than that of the substrate W. The blocking plate 30 is supported in a horizontal posture by a mandrel 32 extending in the vertical direction along the rotation axis A1. The mandrel 32 is supported by a support arm 33 that extends horizontally above the blocking plate 30. The blocking plate 30 is disposed below the mandrel 32. The center axis of the blocking plate 30 is arranged on the rotation axis A1. The lower surface (opposite surface) of the blocking plate 30 faces the upper surface of the substrate W. The blocking plate 30 is connected to a gas pipe 36 in which a gas valve 35 is interposed. When the gas valve 35 is opened, the gas (for example, nitrogen gas) supplied from the gas pipe 36 to the blocking plate 30 is discharged downward from the central opening 31 which forms an opening in the central portion of the lower surface of the blocking plate 30.

As shown in FIG. 3, the processing unit 3 includes a shutter lifter unit 34 that raises and lowers the shutter 30 and the mandrel 32 together with the support arm 33 by raising and lowering the support arm 33 in the vertical direction. The blocking plate lifting unit 34 brings the blocking plate 30 below the blocking plate 30 close to the approaching position (the position shown in FIG. 3) held on the upper surface of the substrate W of the rotary chuck 8 and at the approaching position. Move up and down between the retreat position (position shown in Figure 2). The retreat position is such that each of the nozzles 12 to 14 can enter between the substrate W and the blocking plate 30. The origin position where the blocking plate 30 is separated from the substrate W. The approaching position is such that the blocking plate 30 approaches the operating position of the substrate W so that the nozzles 12 to 14 cannot enter between the substrate W and the blocking plate 30. The shutter lifting unit 34 can position the shutter 30 at any position (height) from the approach position to the retreat position.

As shown in FIG. 3, the treatment liquid capturing member 15 includes a cylindrical splash protection plate 16 that receives the treatment liquid scattered from the substrate W to the outside, and a cylindrical cup 22 that receives the splash protection plate 16. Guided treatment liquid; and a guard plate lifting unit 29 that lifts the splash guard 16.

As shown in FIG. 3, the splash guard 16 is disposed above the cup 22. A splash guard 16 surrounds the rotary chuck 8. The inner peripheral surface of the splash-proof shield 16 includes an upper end of a shield opening 17 formed with a diameter larger than the outer diameter of the rotating base 10. The splash guard 16 includes a ring-shaped upper capture portion 18 having a V-shaped cross section that opens inward (toward the rotation axis A1), and a cylindrical upper guide portion 19 from the upper capture portion. The lower end of 18 extends toward the cup 22. The splash guard 16 further includes a ring-shaped lower capture portion 20 having an arcuate cross-section that opens inward obliquely downward, and a ring-shaped receiving portion 21 that contains a portion of the cup 22 (the inner wall 24 of the cup 22 described below) ).

As shown in FIG. 3, the cup 22 includes a bottom wall 23 that surrounds the rotating chuck 8, a cylindrical inner wall 24 that extends upward from the bottom wall 23, and a cylindrical outer wall 25 that is on the inner wall 24. The periphery extends upward from the bottom wall 23. The inner wall 24 surrounds the rotary chuck 8 and the outer wall 25 surrounds the inner wall 24. The cup 22 forms an annular drain groove 26 surrounding the rotary chuck 8 by the upper surface of the bottom wall 23 and the inner peripheral surface of the inner wall 24. The cup 22 further forms an annular recovery groove 28 surrounding the drain groove 26 by the upper surface of the bottom wall 23, the outer peripheral surface of the inner wall 24, and the inner peripheral surface of the outer wall 25. The drain groove 26 and the recovery groove 28 are both opened upward. The upper guide portion 19 of the splash guard 16 is disposed above the drain groove 26. The receiving portion 21 of the splash-proof protective plate 16 is arranged inside Above the wall 24. The lower catching portion 20 of the splash guard 16 is disposed above the recovery groove 28.

As shown in FIG. 3, the protection plate lifting unit 29 moves the splash protection plate 16 to a lower position (the position shown by a solid line in FIG. 3) and an intermediate position (the position shown by a two-point chain line in FIG. 3). ), And a plurality of positions of the upper position (the position shown in FIG. 2). The lower position is a transfer position where the splash guard 16 is arranged below the holding position of the rotary chuck 8 on the substrate W. The intermediate position is a liquid discharge position where the upper capture portion 18 and the peripheral end surface of the substrate W held on the rotary chuck 8 face each other horizontally. The upper position is a recovery position where the lower capture portion 20 and the peripheral end surface of the substrate W held on the spin chuck 8 face each other horizontally. The lower position is the origin position, the middle position and the upper position are the action positions. The middle position is a position higher than the lower position, and the upper position is a position higher than the middle position. Therefore, the height of the protective plate opening 17 is the lowest when the splash-proof protective plate 16 is in the lower position and the highest when the splash-proof protective plate 16 is in the upper position.

When the central robot CR places the substrate W on the rotary chuck 8 or takes out the substrate W from the rotary chuck 8, the control device 4 positions the splash-proof protective plate 16 in the lower position by the protective plate lifting unit 29. When the processing liquid scattered from the substrate W to the outside is caught by the catching portion 18 on the splash-proof protective plate 16, the control device 4 positions the splash-proof protective plate 16 as a liquid discharge position by the protective plate lifting unit 29. middle place. When the processing liquid scattered from the substrate W to the outside is caught by the capture portion 20 under the splash-proof protective plate 16, the control device 4 positions the splash-proof protective plate 16 as a recovery position by the protective plate lifting unit 29. Above position.

When the splash protection plate 16 is in the middle position, the processing liquid discharged from the substrate W is caught by the capture portion 18 above the splash protection plate 16, and the guide portion 19 above the splash protection plate 16 moves toward the cup 22. The drain groove 26 flows down. When the splash protection plate 16 is in the upper position, the processing liquid discharged from the substrate W is caught by the capture portion 20 below the splash protection plate 16, and the collection portion 20 is recovered from the capture portion 20 below the splash protection plate 16 to the cup 22. The groove 28 flows down. borrow As a result, the treatment liquid caught by the splash guard 16 is guided to the drain groove 26 or the recovery groove 28 of the cup 22.

As shown in FIG. 3, the substrate processing apparatus 1 includes a discharge unit 46 that discharges gas and liquid from a plurality of processing units 3. The exhaust unit 46 is an example of an exhaust unit.

As shown in FIG. 3, the discharge unit 46 includes: a recovery pipe 47 that guides the processing liquid discharged from the recovery groove 28 of the cup 22; and a discharge pipe 48 that is guided by a discharge port 27 that forms an opening in the drainage groove 26 Fluid (at least one of a gas and a liquid) discharged from the drain groove 26 of the cup 22; a gas-liquid separation box 49 (mist separator), the gas discharged from the processing liquid capture member 15 through the discharge pipe 48, and The liquid is separated from the liquid mixture; and a liquid discharge pipe 50 which discharges the liquid in the gas-liquid separation box 49.

As shown in FIG. 3, the exhaust unit 46 includes: an individual exhaust pipe 51 that exhausts the gas in the gas-liquid separation box 49; an individual flow meter 52 that detects the flow rate of the exhaust gas flowing in the individual exhaust pipe 51; The damper 53 adjusts the flow rate of the exhaust gas flowing in the individual exhaust pipe 51; and the individual control device 58 adjusts the opening degree of the individual damper 53 by controlling the individual damper 53. The individual damper 53 is an example of an individual exhaust flow adjustment unit. The setting value of the opening degree of the individual damper 53 is an example of the setting value of the exhaust flow rate of the individual exhaust flow adjustment unit.

The individual control device 58 calculates the flow rate of the exhaust gas flowing in the individual exhaust pipe 51 based on the detection value of the individual flow meter 52. The individual flow meter 52 is, for example, a pressure gauge that detects an exhaust pressure (air pressure) in the individual exhaust pipe 51. In this case, the control device 4 calculates the flow rate of the exhaust gas flowing in the individual exhaust pipe 51 based on the detection value of the individual flow meter 52 that changes according to the exhaust pressure in the individual exhaust pipe 51. The control device 4 transmits a set value (target value) of the opening degree of the individual damper 53 to the individual control device 58. The individual control device 58 is based on the setting value sent from the control device 4 and the actual value of the individual damper 53. The difference in the opening degree is reduced to increase or decrease the opening degree of the individual damper 53.

As shown in FIG. 3, the individual damper 53 includes a damper body 54 that forms an exhaust flow path for guiding exhaust gas, a valve body 55 that opens and closes an exhaust flow path formed by the damper body 54, and an actuator 56. It changes the opening degree (the flow path area of the exhaust flow path) of the individual damper 53 by moving the valve body 55; and the position sensor 57 detects the position of the valve body 55. The damper body 54 of the individual damper 53 is interposed in the individual exhaust pipe 51.

As shown in FIG. 4, the individual control device 58 includes: an opening degree calculation unit 59 that calculates the opening degree of the individual damper 53 based on the detection value of the position sensor 57; An actuator 56 and an opening degree control section 61 that give a command to the shutter driving section 60 to reduce the difference between the actual opening degree of the individual damper 53 and the set value of the opening degree.

The setting value of the opening degree of the individual damper 53 is transmitted from the control device 4 to the opening degree control section 61 of the individual control device 58. The opening degree control section 61 compares the actual opening degree of the individual damper 53 and the set value calculated by the opening degree calculating section 59, and sends a command to reduce the difference between the actual opening degree of the individual damper 53 and the set value to Damper drive 60. The damper driving section 60 drives the actuator 56 in such a manner that the opening degree of the individual damper 53 increases or decreases according to a command from the opening degree control section 61. Thereby, the actual opening degree of the individual damper 53 is close to the set value.

When the opening degree of the individual damper 53 is increased or decreased, the flow path area and the exhaust resistance (pressure loss) of the individual damper 53 are changed. Therefore, the exhaust pressure and the exhaust flow rate in the individual exhaust pipes 51 are changed. Therefore, the control device 4 sends the set value of the opening degree to the individual control device 58 so that the actual exhaust pressure and exhaust flow rate in the individual exhaust pipe 51 can approach the target exhaust pressure and exhaust flow rate.

As shown in FIG. 4, the discharge unit 46 includes a plurality of processes corresponding to each of the processes. The unit 3 has a plurality of individual exhaust pipes 51. Therefore, an individual exhaust pipe 51 is provided for each processing unit 3. Similarly, individual dampers 53, individual flow meters 52, and individual control devices 58 are provided for each processing unit 3. The exhaust unit 46 includes a collective exhaust pipe 62 connected to each individual exhaust pipe 51. The collecting exhaust pipe 62 is connected to an exhaust treatment device that sucks gas at a fixed exhaust pressure. The exhaust gas processing equipment is installed in a factory where the substrate processing apparatus 1 is installed.

As shown in FIG. 4, the exhaust unit 46 includes a collective damper 63 that adjusts the flow rate of the exhaust gas flowing in the collective exhaust pipe 62 further downstream than the connection position of the individual exhaust pipe 51 and the collective exhaust pipe 62. A collective control device 64 that adjusts the flow rate of the exhaust gas discharged from the collective exhaust pipe 62 by controlling the collective damper 63; and a collective flow meter 65 that detects the flow rate of the exhaust gas flowing in the collective exhaust pipe 62. The collection damper 63 is an example of a collection exhaust flow adjustment unit. The set value of the opening degree of the collective damper 63 is an example of the exhaust flow rate setting value of the collective exhaust flow adjustment unit.

The collective flow meter 65 is, for example, a differential pressure flow meter that detects exhaust pressure (pressure) at two positions in the collective exhaust pipe 62. In this case, as shown in FIG. 4, the collective flow meter 65 includes a first collective flow meter 65 a that detects exhaust pressure between the connection position of each of the individual exhaust pipes 51 and the collective exhaust pipe 62 and the collective damper 63. (The air pressure in the individual exhaust pipe 51); and the second collective flow meter 65b, which detects the exhaust pressure on the downstream side of the collective damper 63. The collective flow meter 65 is not limited to a differential pressure flow meter, and may be other types of flow meters such as a thermal mass flow meter, a vortex flow meter, an ultrasonic flow meter, and the like.

The control device 4 performs a pressure difference (differential pressure) between the upstream position and the downstream position of the collecting damper 63 in the individual exhaust pipe 51 based on the detection value of the first collecting flow meter 65a and the detecting value of the second collecting flow meter 65b. Operation. The control device 4 sends a set value (target value) of the opening degree of the collective damper 63 to the collective control device 64. The collective control device 64 reduces the difference between the set value sent from the control device 4 and the actual opening degree of the collective damper 63. In this way, the opening degree of the collecting damper 63 is increased or decreased.

The collecting damper 63 has the same structure as the individual damper 53. Specifically, the collecting damper 63 includes a damper body 54 that forms an exhaust flow path for guiding exhaust gas, a valve body 55 that opens and closes an exhaust flow path formed by the damper body 54, and an actuator 56 that The opening degree of the collecting damper 63 (the flow path area of the exhaust flow path) is changed by moving the valve body 55, and the position sensor 57 detects the position of the valve body 55 (see FIG. 3). The damper body 54 of the collection damper 63 is interposed in the collection exhaust pipe 62.

As shown in FIG. 4, the collective control device 64 includes: an opening degree computing unit 59 that calculates the opening degree of the collective damper 63 based on the detection value of the position sensor 57; and a damper driving unit 60 that drives the collective damper 63. An actuator 56; and an opening degree control unit 61 that gives a command to the damper driving unit 60 to reduce the difference between the actual opening degree of the collective damper 63 and the set value of the opening degree.

The setting value of the opening degree of the individual damper 53 is transmitted from the control device 4 to the opening degree control section 61 of the collective control device 64. The opening degree control unit 61 compares the actual opening degree of the collective damper 63 calculated by the opening degree calculating unit 59 with the set value, and sends a command to reduce the difference between the actual opening degree of the collective damper 63 and the set value to Damper drive 60. The damper driving section 60 drives the actuator 56 in such a manner that the opening degree of the collective damper 63 increases or decreases according to a command from the opening degree control section 61. Thereby, the actual opening degree of the collecting damper 63 is close to the set value.

When the opening degree of the collecting damper 63 increases or decreases, the flow path area and the exhaust resistance (pressure loss) of the collecting damper 63 change. Therefore, the exhaust pressure and the exhaust flow rate in the collecting exhaust pipe 62 are changed. Therefore, the control device 4 sends the set value of the opening degree to the collective control device 64, so that the actual exhaust pressure and exhaust flow rate in the collective exhaust pipe 62 can approach the target exhaust pressure and exhaust flow rate.

As shown in FIG. 5, the control device 4 includes a computer body 67 and a peripheral device 68 connected to the computer body 67. The computer body 67 includes a central processing unit 69 (central processing unit, CPU) that executes various commands, and a main memory device 70 that stores information. The peripheral device 68 includes: an auxiliary memory device 71 that stores information such as programs; a reading device 72 that reads information from the removable medium M; and a communication device 73 that communicates with external devices such as the host computer HC.

As shown in FIG. 5, the computer body 67 is connected to each of the auxiliary memory device 71, the reading device 72, and the communication device 73. The computer body 67 is further connected to various devices such as the indexing robot IR or the processing unit 3. The computer body 67 exchanges information with each of the auxiliary memory device 71 and the like. The CPU 69 executes a program P stored in the auxiliary storage device 71 or a program P read from the removable medium M by the reading device 72. The program in the auxiliary memory device 71 may also be installed in the control device 4 in advance, or may be sent from the removable medium M to the auxiliary memory device 71 through the reading device 72, or may be externally transmitted through the communication device 73 The device is sent to the auxiliary memory device 71.

The auxiliary memory device 71 is a non-volatile memory that retains memory even without supplying power. The auxiliary memory device 71 is, for example, a magnetic memory device such as a hard disk drive. The auxiliary memory device 71 may be a non-volatile memory other than a magnetic memory device. As shown in FIG. 5, the recipe 74, the set value change condition 75, the source pressure change condition 76, and the table 77 are stored in the auxiliary memory device 71. Table 77 includes a point table 78 and a classification table 79.

Removable media M is a non-volatile memory that retains memory even when power is not supplied. The removable medium M is, for example, an optical disc such as a compact disk or a semiconductor memory such as a memory card. The removable medium M may also be a non-volatile memory other than an optical disc and a semiconductor memory. The removable medium M is an example of a computer-readable recording medium on which the program P is recorded.

As shown in FIG. 5, the host computer HC communicates with the control device 4. The host computer HC designates a carrier C (destination position) in which the substrate W to be processed is accommodated, and a carrier C (destination position) in which the substrate W to be processed by the processing unit 3 is accommodated, for each substrate W. The host computer HC further assigns the identification information of the recipe 74 indicating a series of steps performed on the substrate W to the control device 4 for the substrate W.

As shown in FIG. 5, the control device 4 stores a plurality of recipes 74 in the auxiliary storage device 71. The recipe 74 includes recipe identification information, substrate processing conditions, and substrate processing order. The computer body 67 reads the recipe 74 designated by the host computer HC from the auxiliary memory device 71. Furthermore, the computer body 67 creates a processing schedule for processing the substrate W by the processing unit 3 according to the designated recipe 74. Thereafter, the computer body 67 causes the control target (resource) of the substrate processing apparatus 1 such as the indexing robot IR, the central robot CR, and the processing unit 3 to execute a processing schedule.

As shown in FIG. 6, the control device 4 includes a processing schedule creation unit 80 and a processing schedule execution unit 81. The processing schedule creation unit 80 and the processing schedule execution unit 81 are functional blocks implemented by the CPU 69 executing a program installed in the control device 4.

As shown in FIG. 11, the processing schedule creation unit 80 creates a processing schedule that specifies the operation of the processing unit 3 when processing the substrate W in a time series (step S11). The processing schedule execution unit 81 causes the resources of the substrate processing apparatus 1 to execute the processing schedule by controlling the resources of the substrate processing apparatus 1 according to the processing schedule (step S12).

FIG. 9 shows an example of a processing schedule created by the processing schedule creation unit 80. Hereinafter, FIG. 9 and FIG. 12 are referred. S21 to S28 shown in the upper part of FIG. 9 represent the numbers of each step shown in FIG. 12.

When the substrate W is processed by the processing unit 3, a carrying-in step of carrying the substrate W into the chamber 5 is performed (step S21).

Specifically, the control device 4 is such that the interrupting plate 30 is located at the retracted position and With the splash guard 16 in the lower position, the hand H of the central robot CR holding the substrate W enters the chamber 5. Then, the control device 4 causes the central robot CR to place the substrate W on the plurality of chuck pins 9. Thereafter, the control device 4 retracts the hand H of the central robot CR from the inside of the chamber 5 and moves each of the chuck pins 9 from the open position to the closed position. Thereby, the substrate W is held on the spin chuck 8. Thereafter, the control device 4 starts the rotation of the substrate W by controlling the rotary motor 11. Thereby, the substrate W is rotated around the rotation axis A1 at the liquid processing speed.

Next, a first cleaning liquid supply step of supplying pure water as an example of the cleaning liquid to the substrate W is performed (step S22).

Specifically, the control device 4 controls the cleaning liquid nozzle moving unit 45 to move the cleaning liquid nozzle 14 from the retreat position to the processing position. Thereafter, the control device 4 opens the cleaning liquid valve 44 and causes the cleaning liquid nozzle 14 to spit out pure water toward the center of the upper surface of the substrate W with the splash guard 16 in the lower position. Thereby, the entire surface of the upper surface of the substrate W is covered with a liquid film of pure water. When a predetermined time has passed since the cleaning liquid valve 44 was opened, the control device 4 closes the cleaning liquid valve 44 to stop the discharge of pure water from the cleaning liquid nozzle 14. Thereafter, the control device 4 controls the cleaning liquid nozzle moving unit 45 to retract the cleaning liquid nozzle 14 from above the substrate W.

Next, a first chemical liquid supply step of supplying the first chemical liquid to the substrate W is performed (step S23).

Specifically, the control device 4 controls the first chemical liquid nozzle moving unit 39 to move the first chemical liquid nozzle 12 from the retreat position to the processing position. The control device 4 further controls the splash plate lifting unit 29 to move the splash protection plate 16 from the lower position to the intermediate position. In this state, the control device 4 opens the first chemical liquid valve 38 and causes the first chemical liquid nozzle 12 to eject the first chemical liquid toward the center of the upper surface of the substrate W. With this, the substrate W Pure water is replaced with the first chemical solution, and the entire surface of the upper surface of the substrate W is covered with the liquid film of the first chemical solution. When a predetermined time has passed since the first chemical liquid valve 38 was opened, the control device 4 closes the first chemical liquid valve 38 to stop the discharge of the first chemical liquid from the first chemical liquid nozzle 12. Thereafter, the control device 4 controls the first chemical liquid nozzle moving unit 39 to retract the first chemical liquid nozzle 12 from above the substrate W.

Next, a second cleaning liquid supply step of supplying pure water as an example of the cleaning liquid to the substrate W is performed (step S24).

Specifically, the control device 4 controls the cleaning liquid nozzle moving unit 45 to move the cleaning liquid nozzle 14 from the retreat position to the processing position. After that, the control device 4 opens the cleaning liquid valve 44 and causes the cleaning liquid nozzle 14 to spit out pure water toward the center of the upper surface of the substrate W with the splash guard 16 in the middle position. Thereby, the first chemical solution on the substrate W is rinsed with pure water, and the entire surface of the upper surface of the substrate W is covered with a liquid film of pure water. When a predetermined time has passed since the cleaning liquid valve 44 was opened, the control device 4 closes the cleaning liquid valve 44 to stop the discharge of pure water from the cleaning liquid nozzle 14. Thereafter, the control device 4 controls the cleaning liquid nozzle moving unit 45 to retract the cleaning liquid nozzle 14 from above the substrate W.

Next, a second chemical liquid supply step of supplying the second chemical liquid to the substrate W is performed (step S25).

Specifically, the control device 4 controls the second chemical liquid nozzle moving unit 42 to move the second chemical liquid nozzle 13 from the retreat position to the processing position. The control device 4 further controls the protection plate lifting unit 29 to move the splash protection plate 16 from the intermediate position to the upper position. In this state, the control device 4 opens the second chemical liquid valve 41 and causes the second chemical liquid nozzle 13 to eject the second chemical liquid toward the center of the upper surface of the substrate W. Thereby, the pure water on the substrate W is replaced with the second chemical liquid, and the entire upper surface of the substrate W is covered with the liquid film of the second chemical liquid. When a predetermined time has elapsed since the second chemical liquid valve 41 is opened, the control device 4 closes the second The chemical liquid valve 41 stops the discharge of the second chemical liquid from the second chemical liquid nozzle 13. After that, the control device 4 controls the second chemical liquid nozzle moving unit 42 to retract the second chemical liquid nozzle 13 from above the substrate W.

Next, a third cleaning liquid supply step of supplying pure water as an example of the cleaning liquid to the substrate W as a final cleaning liquid supply step is performed (step S26).

Specifically, the control device 4 controls the cleaning liquid nozzle moving unit 45 to move the cleaning liquid nozzle 14 from the retreat position to the processing position. After that, the control device 4 opens the cleaning liquid valve 44 and causes the cleaning liquid nozzle 14 to spit out pure water toward the center of the upper surface of the substrate W with the splash guard 16 in the upper position. Thereby, the second chemical solution on the substrate W is rinsed with pure water, and the entire surface of the upper surface of the substrate W is covered with a liquid film of pure water. The control device 4 controls the protection plate lifting unit 29 to move the splash protection plate 16 from the upper position to the lower position in a state where the cleaning liquid nozzle 14 discharges pure water. When a predetermined time has passed since the cleaning liquid valve 44 was opened, the control device 4 closes the cleaning liquid valve 44 to stop the discharge of pure water from the cleaning liquid nozzle 14. Thereafter, the control device 4 controls the cleaning liquid nozzle moving unit 45 to retract the cleaning liquid nozzle 14 from above the substrate W.

Next, a drying step of drying the substrate W is performed (step S27).

Specifically, the control device 4 controls the interrupter plate elevating unit 34 to move the interrupter plate 30 from the retracted position to the close position. The control device 4 further opens the gas valve 35 so that nitrogen gas is emitted from the central opening 31 which forms an opening in the central portion of the lower surface of the blocking plate 30. Thereafter, the control device 4 controls the rotation motor 11 to accelerate the rotation of the substrate W to be larger than the rotation of the substrate W from the first cleaning liquid supply step (step S22) to the third cleaning liquid supply step (step S26). Speed (liquid processing speed) of the drying speed (for example, thousands of rpm). Thereby, the substrate W is rotated at a drying speed in a state where the blocking plate 30 is located at the close position and the splash prevention plate 16 is located at the lower position.

Since the interrupting plate 30 is close to the substrate W, nitrogen is supplied to the space between the interrupting plate 30 and the substrate W, and the ambient gas between the interrupting plate 30 and the substrate W is removed from the interrupting plate 30 and the substrate. Extrude between W. Thereby, the space between the shielding plate 30 and the substrate W is filled with nitrogen. In addition, as the substrate W rotates at a drying speed, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhered to the substrate W is thrown around the substrate W. Thereby, the liquid is removed from the substrate W, and the substrate W is dried in a nitrogen atmosphere. In addition, if a predetermined time has passed since the high-speed rotation of the substrate W was started, the control device 4 controls the rotation motor 11 to reduce the rotation speed of the substrate W, and closes the gas valve 35 to stop the discharge of nitrogen from the blocking plate 30 .

Next, a carrying-out step of carrying out the substrate W from the chamber 5 is performed (step S28).

Specifically, the control device 4 controls the interrupter plate elevating unit 34 to move the interrupter plate 30 from the approach position to the retracted position (the rise of the interrupter plate 30). Thereafter, the control device 4 stops the rotation of the substrate W using the rotary chuck 8 by controlling the rotary motor 11. The control device 4 further moves each chuck pin 9 from the closed position to the open position, and releases the grasping of the substrate W by the rotary chuck 8. Thereby, the holding of the substrate W by the spin chuck 8 is released. In this state, the control device 4 causes the hand H of the central robot CR to enter the chamber 5. Furthermore, the control device 4 holds the hand H of the central robot CR on the substrate W on the spin chuck 8. Thereafter, the control device 4 retracts the hand H of the central robot CR from the inside of the chamber 5. Thereby, the processed substrate W is carried out from the chamber 5.

In this manner, a plurality of substrate processing steps (a processing liquid supply step or a drying step) are performed under the substrate processing conditions specified by the recipe 74 and in the substrate processing order specified by the recipe 74.

As shown in FIG. 6, the control device 4 includes a set value change determination unit 82 and a cooperation unit. The value calculation unit 83, the group determination unit 84, the individual exhaust schedule creation unit 85, and the individual exhaust schedule execution unit 86. The control device 4 further includes a set value change condition 75 and a table 77. The set value change determination unit 82, the total value calculation unit 83, the group determination unit 84, the individual exhaust schedule creation unit 85, and the individual exhaust schedule execution unit 86 are executed by the CPU 69 by executing a program installed in the control device 4. Implemented function blocks.

As shown in FIG. 13, the setting value change determination unit 82 determines whether the following setting value change condition 75 is satisfied within any one of the processing schedules after the processing schedule is created by the processing schedule creation unit 80 (step S31). . When the setting value change condition 75 is satisfied at any time in the processing schedule (in the case of YES in step S31), the total value calculation unit 83 obtains points in each time of the processing schedule based on Table 77. The total value of the numbers (step S32). The group determination unit 84 determines, based on the table 77, which of the plurality of groups the total value of the points calculated by the total value calculation unit 83 belongs to (step S33).

As shown in FIG. 13, the individual exhaust schedule creation unit 85 creates an individual exhaust flow setting value (a setting value of the opening degree of the individual damper 53) of the individual exhaust flow adjustment unit at each time within a predetermined processing schedule. Gas schedule (step S34). The individual exhaust schedule execution unit 86 controls the individual damper 53 in accordance with the individual exhaust schedule, so that the individual damper 53 executes the individual exhaust schedule simultaneously with the processing schedule (step S35).

In this way, the set value change determination unit 82 determines whether the set value change condition 75 is satisfied within each time of the processing schedule. The blocking plate 30 and the treatment liquid capturing member 15 are examples of movable members that can be moved in the chamber 5. The set value change condition 75 includes a position condition that the movable member is located at a position other than the origin position.

Each of the first chemical liquid nozzle 12, the second chemical liquid nozzle 13, and the cleaning liquid nozzle 14 is an example of a processing fluid supply unit that supplies a processing fluid to the substrate W. The set value change condition 75 further includes at least one of the nozzles 12 to 14 being ejected. Fluid processing conditions during fluid discharge, at least one of the first chemical liquid nozzle 12 and the second chemical liquid nozzle 13, the chemical liquid ejection start condition at which the discharge of the chemical liquid is started, and the first chemical liquid nozzle 12 and the second chemical liquid nozzle At least one of 13 ends the discharge of the medicinal solution and the medicinal solution ejection end condition.

The set value change condition 75 further includes a substrate rotation condition in which the substrate W is rotated, and a riser condition in which the interrupter plate 30 is moved from the close position as the operating position to the retracted position as the origin position. The substrate rotation conditions include a liquid processing execution condition where the substrate W is rotated at a liquid processing speed, and a drying execution condition where the substrate W is rotated at a drying speed.

The total value calculation unit 83 obtains the total value of the points in each time of the processing schedule based on the point table 78. FIG. 7 shows an example of a point table 78 describing a plurality of points allocated for each operating state of the processing unit 3.

As shown in order from the top in FIG. 7, the points table 78 includes: a plurality of points allocated for each position of the movable member, a point from the first chemical liquid nozzle 12, a second chemical liquid nozzle 13, and cleaning A plurality of points allocated for each discharge state of the processing fluid of the liquid nozzle 14 and a plurality of points allocated for each rotation state of the substrate W.

As shown in FIG. 7, the retreat position of the interrupting plate 30 is assigned to 0 points, and the approaching position of the interrupting plate 30 is assigned to 2 points. The position below the splash guard 16 is assigned to 0 points, the middle position of the splash guard 16 is assigned to 1 point, and the position above the splash guard 16 is assigned to 2 points. The discharge state of the medicinal solution is assigned to 3 points, and the discharge state of the medicinal solution is assigned to 0 points. The state in which the washing liquid is being discharged is assigned to 1 point, and the state in which the washing liquid is discharged is assigned to 0 points. The rotation stop state of the substrate W is assigned to 0 points, the liquid processing execution state of the substrate W rotating at the liquid processing speed is assigned to 1 point, and the drying execution state of the substrate W rotating at the drying speed is assigned to 2 points.

The group determination unit 84 calculates the total value based on the classification table 79 The total value of the points obtained by the unit 83 belongs to one of the plurality of groups. FIG. 8 shows an example of a classification table 79 that classifies the total value of the points obtained by the total value calculation unit 83 into three groups according to the size.

As shown in FIG. 8, the classification table 79 includes two thresholds for classifying the total value of points into three groups according to their sizes. FIG. 8 shows an example in which two points and five points are set as threshold values of the total value. The group with a total value of 0 to 1 point is a weak exhaust group, the group with a total value of 2 to 4 points is a exhaust group, and the total value of points is 5 The above groups are strong exhaust groups.

As shown in FIG. 8, when the total number of points is 0 to 1 point, that is, when the weak exhaust condition is established, the setting value of the opening degree of the individual damper 53 is set to the weak setting value (reference value). ). That is, when the weak exhaust condition is established, the added value is zero.

As shown in FIG. 8, when the total number of points is 2 to 4 points, that is, when the middle exhaust condition is established, the setting value of the opening degree of the individual damper 53 is set to be larger than the reference value. value. Therefore, when the middle exhaust condition is established (when the total number of points is 2 to 4), the setting value of the opening degree of the individual damper 53 is set to add the middle added value to the weak set value (reference value ).

As shown in FIG. 8, when the total number of points is 5 or more, that is, when the strong exhaust condition is established, the setting value of the opening degree of the individual damper 53 is set to a strong setting value greater than the middle setting value. . Therefore, when the strong exhaust condition is established (when the total value of the points is 5 or more), the setting value of the opening degree of the individual damper 53 is set to be obtained by adding the imposed value to the weak setting value (reference value). Value. The imposed value is a value greater than the medium added value.

The setting value of the opening degree of the individual damper 53 is adjusted according to the group to which the total value of points belongs. The strong exhaust group is the setting value of the opening degree of the individual damper 53 among the three groups, and the weak exhaust group is the setting value of the opening degree of the individual damper 53 among the 3 groups. The smallest group in the group.

When the total value of points in a certain time of the processing schedule is, for example, 3 points, as shown in FIG. 8, the group determination unit 84 determines that the total value of points belongs to the middle exhaust group. The individual exhaust schedule creation unit 85 creates an individual exhaust schedule in such a manner that the setting value of the opening degree of the individual damper 53 within the time is set to a middle setting value.

When the total value of the points is changed from 3 to 4, as shown in FIG. 8, the group determination unit 84 determines that the total value of the points belongs to the middle exhaust group. In this case, although the total value of points has changed, the group to which the total value of points does not change (still in the middle exhaust group), so the individual exhaust schedule production department 85 Individual exhaust schedules are made in such a way that the setting value of the opening degree of the damper 53 is set to the middle setting value.

FIG. 9 shows an example of an individual exhaust schedule created by the individual exhaust schedule creation unit 85 in addition to an example of a processing schedule.

At the predetermined time T1, it is planned that the interruption plate 30 and the splash protection plate 16 are located at the retracted position and the lower position, respectively, and the position condition that the movable member is located at a position other than the origin position is not established. However, at the predetermined time T1, the substrate W is planned to rotate at the liquid processing speed, and the substrate rotation condition is established. Therefore, at the predetermined time T1, the set value change condition 75 is satisfied.

During the period from the predetermined time T0 to the predetermined time T1, the total value of points is less than 2, and the total value of points belongs to the weak exhaust group. Therefore, the opening degree of the individual damper 53 during this period is set to a weak setting. Value (reference value. "A" in the figure).

At a predetermined time T2, it is planned to rotate the substrate W at a liquid processing speed and discharge pure water. Therefore, at the predetermined time T2, the substrate rotation condition (liquid processing execution condition) and the processing fluid discharge condition are satisfied.

During the period from scheduled time T1 to scheduled time T2, the sum of points The value is 2 points, and the total value of the points belongs to the middle exhaust group. Therefore, the opening degree of the individual damper 53 during this period is set to the middle setting value ("B" in the figure).

During the period from the predetermined time T2 to the predetermined time T3, if the addition of the first liquid medicine is excluded, the total value of points is less than 5 points (2 points). Originally, the total value of points should be classified as Exhaust group. However, since the discharge of the first medicinal solution is started at the predetermined time T3 (the conditions for the discharge of the medicinal solution are established), the period from the predetermined time T2 to the predetermined time T3 is also regarded as the first medicinal solution being discharged, that is, during this period The discharge of the first liquid medicine is not planned, but as shown by the thick line in FIG. 9, the discharge of the first liquid medicine is planned, and 3 points allocated to the state of discharging the first liquid medicine are added. Therefore, it is considered that the total value of the points in this period belongs to the strong exhaust group, and it is planned to set the opening degree of the individual damper 53 to a strong set value ("C" in the figure).

During the period from the predetermined time T3 to the predetermined time T4, it is planned to rotate the substrate W at the liquid processing speed and discharge the first chemical solution. Therefore, during this period, the substrate rotation condition and the processing fluid discharge condition are satisfied. Furthermore, during this period, it is planned so that the splash guard 16 is positioned at an intermediate position. Therefore, during this period, the conditions regarding the position of the splash guard 16 are also established. The total value of the points during this period is 5 or more, so it is planned to set the opening degree of the individual damper 53 to a strong set value.

The period from the predetermined time T4 to the predetermined time T5 is the same as the period from the predetermined time T2 to the predetermined time T3. If the addition of the first medicine liquid is excluded, the total value of the points is 2 to 4 Within the range of points (3 points), originally, the total value of points should be classified into the middle exhaust group. However, since the discharge of the first medicinal solution is stopped at the predetermined time T4 (a condition for the completion of the discharge of the medicinal solution is satisfied), the period from the predetermined time T4 to the predetermined time T5 is also considered to be the first medicinal solution to be dispensed, and will be allocated as the first 3 points in the state of spitting out of medicinal solution are added. Therefore, the total value of points considered as the period belongs to the strong exhaust group. It is planned to set the opening degree of the damper 53 to a strong setting value.

Regarding the period from the predetermined time T5 to the predetermined time T6 and the period from the predetermined time T7 to the predetermined time T8, it is considered that the second medical liquid is ejected in the same manner as the start and end of the first medical liquid. Add 3 points that are assigned to the state of spitting out of the second medicinal solution. Therefore, it is considered that the total value of the points in these periods belongs to the strong exhaust group, and it is planned to set the opening degree of the individual damper 53 to a strong set value.

During the period from the predetermined time T6 to the predetermined time T7, similarly to the period from the predetermined time T3 to the predetermined time T4, the substrate rotation condition (liquid processing execution condition), the processing fluid discharge condition, and the position condition are satisfied. In the period from the predetermined time T3 to the predetermined time T4, the splash prevention plate 16 is planned to be positioned at an intermediate position. On the other hand, in the period from the predetermined time T6 to the predetermined time T7, the splash prevention is performed. The way in which the protective plate 16 is in the upper position is planned.

Points above the splash-proof shield 16 are assigned more points than the middle position of the splash-proof shield 16. Therefore, the total value of points in the period from the predetermined time T6 to the predetermined time T7 (6 points) is larger than the total value of points in the period from the predetermined time T3 to the predetermined time T4 (5 points). However, since the total value of any period belongs to the strong exhaust gas group, it is planned to set the opening degree of the individual damper 53 to a strong setting value.

During the period from the predetermined time T9 to the predetermined time T10, it is planned to rotate the substrate W at a drying speed. Therefore, during this period, the substrate rotation conditions (drying execution conditions) are established. Furthermore, in this period, it is planned so that the interruption plate 30 may be located at a close position. Therefore, during this period, the positional conditions of the interruption plate 30 are also established. The total value of points during this period is in the range of 2 to 4 points (4 points). Therefore, it is planned to set the opening degree of the individual damper 53 during this period to a middle setting value.

During the period from scheduled time T10 to scheduled time T11, if When the addition of the interrupting plate 30 is added, the total value of the points is in the range of 0 to 1 (1 point). Originally, the total value of the points should be classified as a weak exhaust group. However, at the predetermined time T10, the interruption plate 30 is planned to be raised from the approach position to the retracted position, so the interruption plate rise condition is established. Therefore, as shown by the thick line in FIG. 9, the period from the predetermined time T10 to the predetermined time T11 is also regarded as the number of points allocated to the close position of the interruption plate 30 ( 2 points) Addition. Therefore, the total value of the points considered as the period belongs to the middle exhaust group, and it is planned to set the opening degree of the individual damper 53 to the middle set value.

On the one hand, the individual exhaust schedule creation unit 85 refers to the processing schedule, and on the other hand, creates an individual exhaust schedule. The individual exhaust schedule execution unit 86 controls the individual damper 53 according to the individual exhaust schedule, and causes the individual damper 53 to execute the individual exhaust schedule in a manner that the individual exhaust schedule is synchronized with the processing schedule.

As shown in FIG. 6, in addition to the individual exhaust schedule creation unit 85 and the individual exhaust schedule execution unit 86, the control device 4 may further include an individual feedback execution unit 87, which is based on the detection values of the individual flow meters 52. The feedback control for adjusting the opening degree of the individual damper 53 is performed during the execution of the individual exhaust schedule. The individual feedback execution unit 87 is a functional block implemented by the CPU 69 executing a program installed in the control device 4.

The individual feedback execution unit 87 monitors the flow rate of the exhaust gas discharged from the inside of the chamber 5 to the individual exhaust pipe 51 based on the detection value of the individual flow meter 52. In addition, the individual feedback execution unit 87 adjusts the execution of the individual exhaust schedule in such a manner that the exhaust flow rate discharged to the individual exhaust pipe 51 approaches the exhaust flow rate associated with the setting value of the opening degree of the individual damper 53. Opening of individual damper 53. Therefore, when the control device 4 further includes the individual feedback execution unit 87, the flow rate of the exhaust gas discharged from the processing unit 3 can be controlled more precisely.

As shown in FIG. 6, the control device 4 includes a source pressure change determination unit 88, a collective exhaust schedule creation unit 89, and a collective exhaust schedule execution unit 90. The control device 4 further includes Source pressure change condition 76. The source pressure change determination unit 88, the collective exhaust schedule creation unit 89, and the collective exhaust schedule execution unit 90 are functional blocks implemented by the CPU 69 executing a program installed in the control device 4.

As shown in FIG. 14, the source pressure change determination unit 88 determines the source pressure change condition 76 of any of the plurality of individual exhaust flow adjustment units that exceeds a reference value after making an individual exhaust schedule. Whether the exhaust schedule is established at any time (step S41).

As shown in FIG. 14, when the source pressure change condition 76 is satisfied at any time in the individual exhaust schedule (the case of YES in step S41), the exhaust schedule production unit 89 is assembled to When the pressure change condition 76 is established, the exhaust flow setting value of the collective exhaust flow adjustment unit (the setting value of the opening degree of the collective damper 63) is set to be larger than the reference value when the setting values of the opening degrees of all the individual dampers 53 are set. The set value is a value of the source pressure reference value, and a collective exhaust schedule is created that defines the set value of the opening degree of the collective damper 63 within each time of the individual exhaust schedule (step S42).

As shown in FIG. 14, the collective exhaust schedule execution unit 90 controls the collective damper 63 in accordance with the collective exhaust schedule, so that the collective damper 63 executes the collective exhaust schedule simultaneously with the individual exhaust schedule (step S43). .

FIG. 10 shows an example of three individual exhaust schedules corresponding to three processing units 3 (the first processing unit 3, the second processing unit 3, and the third processing unit 3), and the collective exhaust schedule An example of a collective exhaust schedule produced by the production unit 89. The total number of processing units 3 included in the substrate processing apparatus 1 is twelve, but in the description of FIG. 10, it is assumed that the total number of processing units 3 is three.

As shown in FIG. 10, during the period from the predetermined time T20 to the predetermined time T21, the setting value of the opening degree of each individual damper 53 is set to a weak setting value (reference value). Way to plan. Therefore, during this period, the source pressure change condition 76 is not satisfied. Therefore, it is planned to set the opening degree of the collection damper 63 as a reference value of the source pressure.

As shown in FIG. 10, during the period from the predetermined time T21 to the predetermined time T22, the opening value of the individual damper 53 corresponding to any processing unit 3 (the first processing unit 3 in FIG. 10) is set. Plan for the way you set the value. Therefore, during this period, the source pressure change condition 76 is satisfied. Therefore, it is planned to change the setting value of the opening degree of the collective damper 63 to a value larger than the reference value of the source pressure. FIG. 10 shows an example of changing the setting value of the opening degree of the collective damper 63 from a weak setting value to a middle setting value.

As shown in FIG. 10, during the period from the predetermined time T22 to the predetermined time T23, it is planned to set the setting value of the opening degree of each individual damper 53 to a weak setting value (reference value). Therefore, during this period, the source pressure change condition 76 is not satisfied. Therefore, it is planned to set the set value of the opening degree of the collective damper 63 as the reference value of the source pressure.

The collective exhaust schedule creation unit 89 makes collective exhaust schedules with reference to the individual exhaust schedules. The collective exhaust schedule execution unit 90 controls the collective damper 63 in accordance with the collective exhaust schedule, and causes the collective damper 63 to execute the collective exhaust schedule in a manner that the collective exhaust schedule is synchronized with the individual exhaust schedule.

As shown in FIG. 6, the control device 4 replaces the collective exhaust schedule creation unit 89 and the collective exhaust schedule execution unit 90 in addition to the collective exhaust schedule creation unit 89 and the collective exhaust schedule execution unit 90 and the like. It may further include a collective feedback control execution unit 91 that performs a feedback control that adjusts the opening degree of the collective damper 63 based on the detection value of the collective flow meter 65. The integrated feedback control execution unit 91 is a functional block implemented by the CPU 69 executing a program installed in the control device 4.

The collective feedback control execution unit 91 monitors the flow rate of exhaust gas discharged from the inside of the individual exhaust pipe 51 to the collective exhaust pipe 62 based on the detection value of the collective flow meter 65. and In addition, the collective feedback control execution unit 91 adjusts the collective damper 63 so that the exhaust gas discharged to the collective exhaust pipe 62 approaches the flow reference value (the value when the opening degrees of all the individual dampers 53 are the reference values). Opening degree. Therefore, when the control device 4 includes the collective feedback control execution unit 91, the exhaust pressure in the collective exhaust pipe 62 is stabilized, so that fluctuations in the exhaust pressure applied to the individual exhaust pipes 51 can be suppressed or prevented. This makes it possible to suppress or prevent the pressure fluctuation in each processing unit 3. The feedback control by the collective feedback control execution unit 91 may be performed simultaneously with the collective exhaust schedule, or may be performed during a period when the collective exhaust schedule is not performed.

Each processing unit 3 is connected to the same exhaust source (exhaust treatment equipment). The opening degree of each individual damper 53 is usually set on the premise that the source pressure (exhaust pressure of the exhaust treatment equipment) is fixed. That is, on the premise that the exhaust pressure in the collecting exhaust pipe 62 is fixed, the opening degree of each individual damper 53 is set.

If the opening degree of any individual damper 53 changes and the exhaust flow rate from the processing unit 3 corresponding to the individual damper 53 changes, there may be a case where the exhaust pressure in the collecting exhaust pipe 62 changes due to its influence. Therefore, the flow rate of the exhaust gas from the remaining processing unit 3 may be changed. In other words, although the strength of the attraction force of the exhaust treatment equipment itself is the same, the exhaust pressure acting on each treatment unit 3 may change. When the exhaust pressure in the collective exhaust pipe 62 changes, even if the openings of the individual dampers 53 are the same, the exhaust flow rate discharged from each processing unit 3 also changes.

As described above, the collective exhaust schedule is made by referring to all predetermined individual exhaust schedules that are executed at the same time, and the collective exhaust schedule is executed, so that variations in the exhaust pressure in the collective exhaust pipe 62 can be suppressed. Similarly, by adjusting the opening degree of the collecting damper 63 based on the exhaust pressure in the collecting exhaust pipe 62, it is possible to suppress the fluctuation of the exhaust pressure in the collecting exhaust pipe 62. Thereby, the flow rate of the exhaust gas discharged from each processing unit 3 can be suppressed or prevented from inadvertently changing.

As described above, in the present embodiment, a processing schedule of the operation of the processing unit 3 when the substrate W is processed in a time series is prepared. On the one hand, referring to the processing schedule, on the other hand, an individual exhaust gas schedule is established that specifies the exhaust gas flow setting value of the individual exhaust gas flow adjusting unit (the setting value of the opening degree of the individual damper 53 in the above example). Moreover, the individual exhaust schedule is performed simultaneously with the processing schedule.

The blocking plate 30 and the treatment liquid capturing member 15 are examples of movable members that can be moved in the chamber 5. The set value change condition 75 includes a position condition that the movable member is located at a position other than the origin position. When any of the interruption plate 30 and the processing liquid capturing member 15 is planned at a position other than the origin position at any time in the processing schedule, the setting value change condition 75 is established. In this case, the exhaust flow setting value of the individual exhaust flow adjustment unit within the time when the set value change condition 75 is established is planned to be set to a value greater than the set value (reference value) when the movable member is located at the origin position .

When the movable member is actually located at a position other than the origin position, the exhaust flow setting value of the individual exhaust flow adjustment unit is set to a value larger than the reference value. Therefore, the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51 becomes strong. In other words, the absolute value of the exhaust pressure (negative pressure) lower than the atmospheric pressure becomes larger. Therefore, even if the exhaust resistance (pressure loss) of the processing unit 3 is increased according to the position of the movable member, the exhaust pressure is correspondingly increased, so that fluctuations in the flow rate of the exhaust discharged from the processing unit 3 can be suppressed.

Furthermore, the individual exhaust schedules are executed simultaneously with the processing schedule. That is, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit is not changed after the flow rate of the gas discharged from the processing unit 3 actually changes, but is adjusted before the flow rate change occurs. Therefore, compared with the case where the feedback control is performed, the time until the exhaust flow rate becomes stable can be shortened.

Specify the individual exhaust flow setting value of individual exhaust flow adjustment unit The exhaust schedule is created based on the processing schedule. When the same recipe 74 is executed, there may be different parameters that affect the exhaust flow. Therefore, by creating an individual exhaust schedule based on each process schedule, the exhaust flow rate can be optimized even for any substrate W process.

In addition, in the present embodiment, the set value changing condition 75 includes a condition during which the processing fluid is being discharged. Therefore, in the case of planning by discharging the processing liquid as an example of the processing fluid, it is also planned to increase the force (exhaust pressure) for discharging the gas in the chamber 5 into the individual exhaust pipe 51.

When the processing fluid is discharged (particularly, the processing liquid is discharged), it is easy to generate mist in the processing unit 3. If the mist adheres to the substrate W, the substrate W may be contaminated. In addition, there is a case where the mist is changed into particles that are one of the causes of contamination of the substrate W, and the particles are suspended in the processing unit 3. Therefore, since the exhaust pressure is actually increased when the processing fluid is discharged, the mist can be efficiently discharged from the processing unit 3, and the diffusion range of the mist can be reduced. Therefore, it is possible to reduce the contamination of the substrate W due to the adhesion of mist or particles.

In addition, in the present embodiment, the set value change condition 75 includes a medical liquid discharge start condition. Therefore, in the case of planning by discharging a chemical liquid as a processing fluid, it is also planned to increase the force (exhaust pressure) for discharging the gas in the chamber 5 into the individual exhaust pipe 51. When the medicinal solution is discharged, a mist of the medicinal solution is easily generated in the processing unit 3. Furthermore, the mist of the chemical liquid is more likely to contaminate the substrate W than the mist of the cleaning liquid such as pure water. Therefore, since the discharge pressure is actually increased when the chemical solution is actually discharged, the mist of the chemical solution can be efficiently discharged from the processing unit 3, and the diffusion range of the mist can be reduced. Therefore, it is possible to reduce the contamination of the substrate W due to the adhesion of mist or particles.

Furthermore, since the time when the discharge start condition of the medicinal solution is established, that is, before the discharge of the medicinal solution is started, the gas in the chamber 5 is enhanced to be discharged into the individual exhaust pipe 51. Force (exhaust pressure) scheme. In addition, while continuing to spit out the medicinal solution, it is planned to maintain a state of increased exhaust pressure. Therefore, the discharge of the medicinal solution is started under the state of increasing the exhaust pressure, so the mist of the medicinal solution can be efficiently discharged immediately after the medicinal solution is discharged. Thereby, the residual amount of the mist of the medicinal solution in the chamber 5 can be reduced, and contamination of the substrate W due to the adhesion of mist or particles can be reduced.

In addition, in the present embodiment, the set value change condition 75 includes a chemical liquid discharge end condition. It is planned to increase the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51 after the completion of the discharge condition of the medicinal solution, that is, after stopping the discharge of the medicinal solution. Therefore, the mist of the medicinal solution suspended in the chamber 5 after the discharge of the medicinal solution is stopped can be surely discharged. Thereby, the residual amount of the mist of the medicinal solution in the chamber 5 can be reduced, and contamination of the substrate W due to the adhesion of mist or particles can be reduced.

In this embodiment, the set value changing condition 75 includes a substrate rotation condition. Therefore, in the case of planning by rotating the chuck 8 to rotate the substrate W, it is also planned to increase the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51.

When the substrate W to which the processing liquid is attached is rotated, the processing liquid is scattered from the substrate W, and thus mist is easily generated. Therefore, by increasing the exhaust pressure when the substrate W is actually rotated, the mist can be efficiently discharged from the processing unit 3, and the diffusion range of the mist can be reduced. Therefore, it is possible to reduce the contamination of the substrate W due to the adhesion of mist or particles.

In the present embodiment, the set value change condition 75 includes a drying execution condition. Therefore, when the substrate W is rotated at a drying speed, the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51 is increased.

The drying speed is greater than the rotation speed of the substrate W when any one of the first chemical liquid nozzle 12, the second chemical liquid nozzle 13, and the cleaning liquid nozzle 14 discharges the processing fluid. Turn speed. If the rotation speed of the substrate W is increased, the centrifugal force acting on the processing liquid attached to the substrate W is also increased, so the amount of the processing liquid scattered from the substrate W is increased. Therefore, when the substrate W is rotated at a drying speed, fog is easily generated. Therefore, by increasing the exhaust pressure when the substrate W is rotated at a drying speed, the mist can be efficiently discharged from the processing unit 3, and the diffusion range of the mist can be reduced.

In the present embodiment, the set value change condition 75 includes a riser condition of the interrupter. Therefore, when planning to move the blocking plate 30 upward, it is planned to increase the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51.

When the interrupting plate 30 rises from a close position which is an operating position of the interrupting plate to a retreat position which is an origin position of the interrupting plate, the interrupting plate 30 is separated from the substrate W and the interval between the interrupting plate 30 and the substrate W is widened. If the rising speed of the blocking plate 30 is large, the air pressure between the blocking plate 30 and the substrate W decreases, and the ambient gas in the chamber 5 is sucked between the blocking plate 30 and the substrate W. Therefore, there is a possibility that mist or particles suspended around the substrate W adhere to the substrate W.

If the rising speed of the blocking plate 30 is reduced, it can be considered that the intake of the ambient gas due to the negative pressure is reduced. However, if the rising speed of the shielding plate 30 is slow, the time required for processing the substrate W increases, so that the processing amount of the substrate processing apparatus 1 (the number of processing pieces of the substrate W per unit time) may decrease.

If the exhaust pressure is increased when the interval between the shielding plate 30 and the substrate W is enlarged, the ambient gas around the substrate W is forcibly sucked to the side of the individual exhaust pipe 51, so the ambient gas is suppressed from entering the shielding plate 30 and the substrate Between W. Therefore, it is possible to suppress or prevent the ambient gas around the substrate W from contacting the substrate W without reducing the rising speed of the blocking plate 30. Therefore, it is possible to reduce the contamination of the substrate W while maintaining the throughput.

In the present embodiment, a table 77 including a plurality of points is stored in the auxiliary memory device 71 of the control device 4. The plurality of points are allocated for each working condition of the processing unit 3. Specifically, Table 77 includes a plurality of points respectively assigned to the origin position and the operation position of the movable member, and a plurality of points respectively assigned to the state during the discharge of the processing fluid and the state in which the discharge is stopped.

When the setting value change condition 75 is satisfied at any time in the processing schedule, the total value of the points in each time of the processing schedule is calculated. In addition, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit in each time of the processing schedule is planned to be set to a value larger than the reference value based on the total value of the points. Therefore, the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51 is adjusted according to the operating condition of the processing unit 3. Therefore, the airflow in the chamber 5 can be brought close to an ideal state.

In addition, in this embodiment, the table 77 stored in the auxiliary memory device 71 of the control device 4 is divided into a plurality of points allocated for each position of the movable member and a plurality of points allocated for each discharge state of the processing fluid. In addition to the number of points, a plurality of points respectively allocated to the rotation state and the rotation stop state of the substrate W are included. Therefore, the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51 is adjusted to a size that also takes into consideration the rotation state of the substrate W. Therefore, the airflow in the chamber 5 can be brought close to an ideal state.

In addition, in this embodiment, the table 77 stored in the auxiliary memory device 71 of the control device 4 includes the points of the cleaning liquid allocated to the state during which the cleaning liquid is being discharged, and the medicines allocated to the state during which the liquid is being discharged. Liquid points. The point of the medicinal solution is greater than that of the cleaning solution. Therefore, if the other operating conditions of the processing unit 3 are the same, the total value of the points when the chemical liquid is discharged is greater than the total value of the points when the cleaning liquid is discharged.

As described above, the exhaust flow setting value of the individual exhaust flow adjustment unit at each time of the processing schedule is set to be larger than the reference value in accordance with the total value of the points The value of the plan. If the total value of the points is large, the force (exhaust pressure) for exhausting the gas in the chamber 5 into the individual exhaust pipe 51 is strong, so the gas in the chamber 5 is surely discharged.

The mist of the chemical liquid is more likely to contaminate the substrate W than the mist of the cleaning liquid such as pure water. Therefore, since the discharge pressure is actually increased when the chemical solution is actually discharged, the mist of the chemical solution can be efficiently discharged from the processing unit 3, and the diffusion range of the mist can be reduced. Therefore, it is possible to reduce the contamination of the substrate W due to the adhesion of mist or particles.

Further, in the present embodiment, one or more threshold values for classifying the total value of points into a plurality of groups are included in the table 77 of the auxiliary memory device 71 stored in the control device 4. Which of the plurality of groups the total value of points belongs to is obtained based on the classification table 79 of Table 77.

When the total value of the points in each time of the processing schedule is different, if the group is the same, the added value allocated to the group is also added to the reference value of the individual exhaust flow adjustment unit. In other words, even if the total value of the points changes, if the group to which the total value belongs is the same, the exhaust flow setting value of the individual exhaust flow adjustment unit will not change. Therefore, compared with the case where the intensity of the exhaust gas is changed every time the total value of points is changed, it is possible to prevent the control from being complicated.

Further, in the present embodiment, the gas in the plurality of processing units 3 is discharged to the plurality of individual exhaust pipes 51, respectively. Exhaust gas that flows toward the exhaust treatment equipment to the downstream side in each individual exhaust pipe 51 is discharged into the collective exhaust pipe 62. The flow rate of the exhaust gas that flows toward the exhaust treatment equipment in the collective exhaust pipe 62 is adjusted by the collective damper 63 as the collective exhaust flow adjustment unit.

The collective exhaust schedule that specifies the exhaust flow setting value of the collective exhaust flow adjustment unit (the setting value of the opening degree of the collective damper 63) is based on the one hand by referring to the prescribed exhaust flow setting value of the individual exhaust flow adjustment unit (individual damper). (The opening value of 53) Gas scheduling is made on the one hand. Moreover, the collective exhaust schedule is performed simultaneously with the individual exhaust schedule.

When at any time in the individual exhaust schedule, the exhaust flow setting value of any individual exhaust flow adjustment unit is greater than the reference value, the source pressure change condition 76 is satisfied. The exhaust flow rate setting value of the collective exhaust flow rate adjustment unit is planned to be set to a value larger than a set value (source pressure reference value) when the exhaust flow rate setting value of each individual exhaust flow rate adjustment unit is a reference value.

If the set value of the exhaust flow rate of any individual exhaust flow adjustment unit is greater than the reference value, there may be a case where the exhaust pressure in the collective exhaust pipe 62 decreases, and the influence of the decrease in the exhaust pressure may spread to other processing units 3. Therefore, by making the set value of the exhaust flow rate of the collective exhaust flow rate adjustment unit larger than the source pressure reference value, it is possible to suppress or prevent a decrease in the flow rate of the exhaust gas discharged from the other processing unit 3. This makes it possible to suppress or prevent pressure fluctuations in the other processing units 3.

Furthermore, the collective exhaust schedule is performed simultaneously with the individual exhaust schedule. That is, the exhaust flow rate setting value of the collective exhaust flow rate adjustment unit is not changed after the flow rate of the exhaust gas flowing in the collective exhaust pipe 62 is actually changed, but is adjusted before the flow rate change occurs. Therefore, compared with the case where the feedback control is performed, the time until the exhaust flow rate becomes stable can be shortened.

In the present embodiment, the flow path of the gas flowing toward the individual exhaust pipe 51 inside the chamber 5 is formed in the chamber 5 by the interrupter plate 30 and the treatment liquid capturing member 15 as the movable member. . Therefore, if at least one of the blocking plate 30 and the processing-liquid capturing member 15 moves in the chamber 5, the shape of the flow path changes, so the exhaust resistance of the processing unit 3 changes. Therefore, by setting the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit (the setting value of the opening degree of the individual damper 53) according to the blocking plate 30 and the processing liquid capture structure, The position of the element 15 is changed, so that the flow rate of the gas discharged from the processing unit 3 can be stabilized.

The above is the description of the embodiment of the present invention, but the present invention is not limited to the content of the above embodiment, and various changes can be made within the scope of the present invention.

For example, in the embodiment described above, the set value change condition 75 includes, in addition to the position condition, a processing fluid discharge condition, a chemical solution discharge start condition, a chemical solution discharge end condition, a substrate rotation condition, and a blocking plate rising condition. The situation is illustrated. However, at least one of the medicinal solution ejection start condition, the medicinal solution ejection end condition, the substrate rotation condition, and the shutter rise condition may be excluded from the set value change condition 75.

In addition, as shown in FIG. 4, in the above embodiment, the exhaust unit 46 may be provided with a blower 66 in addition to the collecting damper 63, and the collecting exhaust pipe 62 is reinforced by blowing gas toward the downstream end of the collecting exhaust pipe 62. Exhaust pressure inside. Both the collection damper 63 and the blower 66 are examples of a collection exhaust flow adjustment unit that adjusts the flow rate of the exhaust gas flowing in the collection exhaust pipe 62 toward the exhaust treatment equipment.

The blower 66 is connected to the collecting exhaust pipe 62 further downstream than the collecting damper 63. The control device 4 controls the blower 66 to switch the blower 66 between the air supply state (on) and the air supply stop state (off). In addition to the on / off of the blower 66, the control device 4 can also change the air flow rate of the blower 66. The blower 66 forms an air flow flowing in the collection exhaust pipe 62 toward the downstream side (the exhaust treatment equipment side). Therefore, in the air supply of the blower 66, the force that moves the gas in the collective exhaust pipe 62 to the downstream side of the collective exhaust pipe 62 is formed by the exhaust treatment equipment and the blower 66, and the exhaust pressure in the collective exhaust pipe 62 rises high. Therefore, by controlling the blower 66, the control device 4 can change the exhaust pressure and the exhaust flow rate in the collecting exhaust pipe 62.

When the blower 66 is switched between the air supply state and the air supply stop state, the flow rate of the exhaust gas flowing in the collective exhaust pipe 62 is also adjusted. Similarly, if the collection damper is changed With an opening of 63, the flow rate of the exhaust gas flowing in the collecting exhaust pipe 62 is adjusted. Therefore, the collective exhaust schedule creation unit 89 of the control device 4 can also produce the collective exhaust schedule by at least one of adjusting the opening degree of the collective damper 63 and switching the blower 66. Similarly, the collective feedback control execution unit 91 of the control device 4 may control at least one of the collective damper 63 and the blower 66 based on the detection value of the collective flow meter 65.

When the blower 66 supplies air, the gas in the collective exhaust pipe 62 is forcibly discharged by the blower 66, so the exhaust pressure in the collective exhaust pipe 62 increases (the absolute value of the exhaust pressure becomes larger). Therefore, when the attraction of the exhaust equipment is insufficient, the exhaust pressure in the collecting exhaust pipe 62 can be maintained at a fixed pressure by operating the blower 66. This makes it possible to suppress or prevent the pressure fluctuation in each processing unit 3.

In the above embodiment, the exhaust unit 46 may include an exhaust pump (individual pump) that exhausts the gas in the individual exhaust pipe 51 to the collective exhaust pipe 62 in addition to or instead of the individual damper 53. In this case, the individual exhaust schedule creation unit 85 of the control device 4 may also make the individual exhaust schedule by at least one of the adjustment of the opening degree of the individual damper 53 and the output adjustment of the exhaust pump. Similarly, the individual feedback execution unit 87 of the control device 4 may control at least one of the individual damper 53 and the exhaust pump based on the detection value of the individual flow meter 52.

In the above embodiment, the case where the rotation chuck 8 as the substrate holding unit holds the substrate W and rotates it has been described. However, the substrate holding unit can also replace the rotating base 10 that can be rotated together with the substrate W, and includes a non-rotatable holding base that supports the lower surface of the substrate W.

In the above embodiment, the total value of the points is calculated based on a plurality of points allocated based on each operating condition of the processing unit 3, and the individual exhaust flow rate is adjusted according to the size of the total value of the points The exhaust flow set value of the unit is set to greater than The case where an individual exhaust schedule is created as the value of the reference value has been described. That is, the case where the added value added to the reference value is changed in accordance with the total value of points is described. However, when the setting value change condition 75 is satisfied, a fixed value may be added to the reference value without calculating the total value of points.

In the above embodiment, the total value of the judgment points belongs to one of a plurality of groups (a weak exhaust group, a medium exhaust group, and a strong exhaust group), and will be assigned to the group to which it belongs. The case where the added value of the group is added to the reference value is explained. That is, even if the total value of the points is different, if the groups to which they belong are the same, the case where the same size addition value is added to the reference value is explained. However, the calculation value may be changed for the total value of each point.

In the above-mentioned embodiment, the case where the substrate processing apparatus 1 is an apparatus which processes a disk-shaped substrate was demonstrated. However, the substrate processing apparatus 1 may be a device that processes a polygonal substrate such as a substrate for a liquid crystal display device.

Two or more of all the embodiments may be combined.

Although the embodiments of the present invention have been described in detail so far, these are only specific examples for clarifying the technical content of the present invention, and the present invention should not be interpreted as being limited to these specific examples. The spirit of the present invention The scope is limited only by the scope of the accompanying application.

This application corresponds to Japanese Patent Application No. 2013-261468 filed with the Japan Patent Office on December 18, 2013, and all disclosures of this application are hereby incorporated herein by reference.

3‧‧‧ processing unit

4‧‧‧control device

46‧‧‧Discharge unit

74‧‧‧ recipe

75‧‧‧Set value change condition

76‧‧‧source pressure change conditions

77‧‧‧Table

78‧‧‧point table

79‧‧‧ Classification

80‧‧‧ Processing Schedule Production Department

81‧‧‧ Processing schedule execution department

82‧‧‧Setting value change judgment section

83‧‧‧Total value calculation department

84‧‧‧Group determination department

85‧‧‧ Individual exhaust schedule production department

86‧‧‧ Individual exhaust schedule execution department

87‧‧‧ Individual feedback execution department

88‧‧‧Source pressure change judgment section

89‧‧‧collection exhaust schedule production department

90‧‧‧collection exhaust schedule execution department

91‧‧‧Integrated feedback control execution department

CR‧‧‧ Central Robot

IR‧‧‧ Indexing Robot

Claims (18)

A substrate processing apparatus includes: a processing unit that processes a plurality of substrates one by one; an exhaust unit that discharges gas from the processing unit; and a computer control device that controls the processing unit and the exhaust A gas unit; and the processing unit includes: a chamber having an internal space; a substrate holding unit that holds a substrate in the chamber; and a processing fluid supply unit that supplies a processing fluid to a substrate held by the substrate holding unit And a movable member, which can move between the positions separated from each other, that is, the origin position and the action position, in the above-mentioned chamber; and the above-mentioned exhaust unit includes: an individual exhaust pipe, which will be from the above-mentioned chamber. The exhaust gas is guided toward the exhaust treatment equipment; and an individual exhaust flow adjustment unit that adjusts the flow of the exhaust gas flowing in the individual exhaust pipe toward the exhaust treatment equipment; and the control device executes The following steps: a processing schedule making step, which produces the above-mentioned processing unit when processing the substrate in time series Set a prescribed processing schedule; a set value change judgment step, which determines whether the set value change condition is true, the set value change condition includes each time of the above-mentioned processing schedule created in the above-mentioned processing schedule creation step Inside, the condition that the movable member is located at a position other than the origin position; The individual exhaust schedule creation step is to create an individual exhaust schedule that specifies the exhaust flow setting value of the individual exhaust flow adjustment unit in each time of the above-mentioned processing schedule in the following manner: If the above-mentioned set value change condition is satisfied at any time in the schedule, the exhaust flow set value of the individual exhaust flow adjustment unit within the time when the set value change condition is established is set to be more movable than the above. The set value when the component position is at the origin position, that is, the reference value is a large value; and the individual exhaust schedule execution step, which executes the individual exhaust schedule in a manner that is concurrent with the processing schedule. For example, the substrate processing apparatus of the first patent application range, wherein the set value change condition further includes a processing fluid discharge condition in which the processing fluid supply unit is discharging the processing fluid. For example, the substrate processing apparatus of the first patent application range, wherein the processing fluid supply unit includes a chemical liquid nozzle that discharges a chemical liquid as a processing fluid toward a substrate held by the substrate holding unit, and the set value is changed. The conditions further include the above-mentioned chemical liquid ejection start conditions for starting the chemical liquid discharge from the chemical liquid nozzle, and the above-mentioned individual exhaust schedule creation step includes the steps of preparing the above-mentioned individual exhaust schedule in the following manner: When the above-mentioned set value change condition is satisfied at any time in the schedule, the exhaust flow set value of the individual exhaust flow adjustment unit within the time when the set value change condition is established is set to be higher than the above reference The value is a large value, and the exhaust flow rate setting value of the individual exhaust flow rate adjusting unit is set to a value greater than the reference value since an earlier time than the time when the above-mentioned chemical liquid discharge start condition is satisfied. For example, the substrate processing apparatus of the scope of application for a patent, wherein the above-mentioned processing fluid is supplied The unit system includes a medicine liquid nozzle that discharges the medicine liquid as a processing fluid toward the substrate held by the substrate holding unit. The setting value change condition further includes a medicine that ends the discharge of the medicine liquid by the medicine liquid nozzle. The liquid discharge end condition. The above-mentioned individual exhaust schedule creation step includes the steps of making the above-mentioned individual exhaust schedule in such a manner that, at any time in the above-mentioned processing schedule, the above-mentioned set value change condition is satisfied. The exhaust flow rate setting value of the individual exhaust flow rate adjustment unit within the time when the setting value change condition is satisfied is set to a value larger than the reference value, and until the condition for starting the discharge of the medicinal solution is satisfied. After that time, the exhaust flow rate setting value of the individual exhaust flow rate adjustment unit is set to a value larger than the reference value. For example, the substrate processing device of the first patent application range, wherein the substrate holding unit includes a rotary chuck that holds the substrate while rotating it in the chamber, and further includes the condition for changing the set value. There are substrate rotation conditions for the substrate to rotate. For example, the substrate processing apparatus of the scope of application for patent No. 5, wherein the above-mentioned substrate rotation conditions include drying execution conditions, and the drying execution conditions are that the substrate is dried at a faster speed than the substrate rotation speed when the processing fluid supply unit discharges the processing fluid. Rotate. For example, the substrate processing device of the scope of application for a patent, wherein the movable member includes a blocking plate, and the blocking plate can be located at the origin of the blocking plate above the substrate holding unit and the blocking plate original. The position between the point position and the operating position of the shutter between the substrate holding unit moves in the chamber, and the setting value change condition further includes that the shutter is moved from the shutter. The riser condition of the interrupter that moves the operating position to the original position of the interrupter. For example, the substrate processing apparatus of the first patent application range, wherein the control device includes a memory device, the memory device stores a table, and the table includes a plurality of numbers assigned to each position of the movable member. A table of the number of points and a plurality of points allocated for each discharge state of the processing fluid from the processing fluid supply unit, the control device further executes a total value calculation step, and the total value calculation step is If the condition for changing the set value is satisfied at any time in the processing schedule, the total value of the points in each time of the processing schedule is obtained according to the above table. The individual exhaust schedule production steps It includes the steps of making the above-mentioned individual exhaust schedule in the following way: if at any time in the above-mentioned processing schedule, the above-mentioned set value change condition is satisfied, and within the time when the above-mentioned set value change condition is satisfied, The exhaust flow setting value of the individual exhaust flow adjustment unit is set to be larger than the above-mentioned base according to the magnitude of the total value. The standard value is a large value. For example, the substrate processing apparatus of the eighth aspect of the patent application, wherein the substrate holding unit includes a rotating chuck for holding the substrate while rotating it in the chamber, and the watch system further includes a substrate for the substrate. The number of points assigned to each of the rotation states. For example, the substrate processing apparatus of the eighth aspect of the patent application, wherein the plurality of points allocated for each discharge state of the processing fluid from the processing fluid supply unit include a cleaning liquid for the processing fluid. The number of points of the cleaning liquid to be dispensed and the number of points of the chemical liquid to be dispensed with respect to the state of discharging the chemical liquid as the processing fluid and larger than the number of the cleaning liquid. For example, for the substrate processing device of the scope of application for patent No. 8, wherein the above table includes More than one threshold value, the threshold value classifies the total value of points into a plurality of groups according to the total value of the points, and the plurality of groups are respectively assigned a plurality of different sizes The control device further executes a group determination step. The group determination step is based on the above table to obtain a total value of the points obtained in the total value calculation step, which belongs to the plurality of groups. Which of the groups, the above-mentioned individual exhaust schedule creation step includes the steps of making the above-mentioned individual exhaust schedule in the following manner: in any time in the above-mentioned processing schedule, the above-mentioned set value change condition is satisfied The exhaust flow rate setting value of the individual exhaust flow rate adjustment unit within the time when the setting value change condition is satisfied is formed to increase only from the reference value and is allocated to the point obtained in the above-mentioned total value calculation step. The above added value of the above group to which the total value of the number belongs. For example, the substrate processing apparatus of the first patent application range, wherein the substrate processing apparatus includes a plurality of the above-mentioned processing units, and the exhaust unit includes: a plurality of the above-mentioned individual exhaust pipes, each of which corresponds to the above-mentioned plurality The above-mentioned processing units, and directing the gas discharged from the chambers of the above-mentioned processing units toward the exhaust treatment equipment; the above-mentioned individual exhaust flow adjustment units, each of which corresponds to the above-mentioned plurality The individual exhaust pipes, and adjusting the flow rate of the exhaust gas flowing in the plurality of individual exhaust pipes toward the exhaust treatment equipment; and a collective exhaust pipe connected to the plurality of individual exhaust pipes. Each; and a collective exhaust gas flow adjustment unit that adjusts a flow rate of exhaust gas flowing in the collective exhaust pipe toward the exhaust treatment equipment; and The above control device further executes the following steps: a source pressure change determination step, which judges whether the source pressure change condition is established within each time of the individual exhaust schedule created in the individual exhaust schedule creation step. The source pressure change condition is that any one of the above-mentioned individual exhaust flow adjustment units has an exhaust flow setting value greater than the above-mentioned reference value; a collective exhaust schedule production step, which is produced in the following manner Collective exhaust schedule where the exhaust flow setting value of the above-mentioned collective exhaust flow adjustment unit is specified at each time of the individual exhaust schedule: At any time in the individual exhaust schedule, the above-mentioned source pressure change condition is In the case of being established, the exhaust flow setting value of the above-mentioned integrated exhaust flow adjusting unit within the time when the above-mentioned source pressure change condition is satisfied is set to be higher than the exhaust flow setting value of the respective exhaust flow adjusting unit. The set value at the reference value, that is, the reference value of the source pressure is a large value; and the collective exhaust schedule execution step is performed at the same time as the above-mentioned individual exhaust schedule Executing the set of exhaust scheduling mode. For example, the substrate processing apparatus of the first patent application range, wherein the substrate processing apparatus includes a plurality of the above-mentioned processing units, and the exhaust unit includes: a plurality of the above-mentioned individual exhaust pipes, each of which corresponds to the above-mentioned plurality The above-mentioned processing units, and directing the gas discharged from the chambers of the above-mentioned processing units toward the exhaust treatment equipment; the above-mentioned individual exhaust flow adjustment units, each of which corresponds to the above-mentioned plurality The individual exhaust pipes, and adjusting the flow rate of the exhaust gas flowing in the plurality of individual exhaust pipes toward the exhaust treatment equipment; and a collective exhaust pipe connected to the plurality of individual exhaust pipes. Each A collective exhaust flow rate adjustment unit that adjusts a flow rate of exhaust gas flowing in the collective exhaust pipe toward the exhaust treatment equipment; and a collective flow meter that detects the exhaust pipe toward the exhaust treatment equipment in the collective exhaust pipe. The flow rate of the exhaust gas flowing inside; and the control device controls the aggregate exhaust flow rate adjustment unit in such a way that the exhaust flow rate in the aggregate exhaust pipe obtained based on the detection value of the aggregate flow meter is close to When the exhaust flow rate setting value of each individual exhaust flow rate adjustment unit is the above-mentioned reference value, it is the flow reference value. For example, the substrate processing device of the scope of application for patent No. 12, wherein the collective exhaust flow adjustment unit includes at least one of a collective damper and a blower, the collective damper opens and closes the collective exhaust pipe, and the blower The airflow flowing toward the exhaust treatment equipment is formed in the collection exhaust pipe. For example, in the substrate processing apparatus of claim 1, the movable member forms a flow path of a gas flowing in the chamber toward the individual exhaust pipe in the chamber. For example, the substrate processing apparatus according to any one of claims 1 to 15, wherein the movable member includes at least one of a blocking plate and a splash protection plate, and the blocking plate can be held on the substrate. The splash-proof protective plate can be moved in the chamber between the original position of the shielding plate above the unit and the operating position of the shielding plate between the shielding plate origin and the substrate holding unit. The substrate held by the substrate holding unit is moved between the original position of the lower shield plate and the operating position of the shield plate located around the substrate held by the substrate holding unit. A method for controlling a substrate processing apparatus is executed by the above-mentioned control device of the substrate processing apparatus. The substrate processing apparatus is provided with: a processing unit, The substrate is processed piece by piece; an exhaust unit that exhausts the gas in the processing unit; and a computer control device that controls the processing unit and the exhaust unit; and the processing unit includes a chamber, It has an internal space; a substrate holding unit that holds the substrate in the chamber; a processing fluid supply unit that supplies a processing fluid to the substrate held by the substrate holding unit; and a movable member that can be separated from each other as: Move between the origin position and the operating position in the chamber; the exhaust unit includes: an individual exhaust pipe that guides the gas discharged from the chamber toward the exhaust treatment equipment; and the individual An exhaust flow adjustment unit that adjusts the flow of the exhaust gas flowing in the individual exhaust pipe toward the exhaust processing equipment; the control method of the substrate processing apparatus includes a processing schedule making step, which is made in time Sequence the predetermined processing schedule for the operation of the above processing unit when processing the substrate; set value change judgment step It judges whether the set value change condition is true or not. The set value change condition includes that the movable member is located at a position other than the origin position within each time of the processing schedule created in the processing schedule creation step. Position conditions; an individual exhaust schedule creation step, which creates an individual exhaust schedule that defines the exhaust flow setting value of the individual exhaust flow adjustment unit described above within each time of the processing schedule : At any time in the above processing schedule, the above setting value change bar In the case where the component is established, the exhaust flow setting value of the individual exhaust flow adjustment unit within the time when the set value change condition is satisfied is set to a setting value when the movable member is positioned at the origin position. That is, the reference value is a large value; and an individual exhaust schedule execution step, which executes the above-mentioned individual exhaust schedule in the same manner as the above-mentioned processing schedule. A recording medium having recorded thereon a computer program which is executed by a control device of a substrate processing apparatus related to a method for controlling a substrate processing apparatus of claim 17 of a patent application and is readable by a computer; and A computer program having a group of steps is incorporated in such a manner that the control device as a computer executes the control method of the substrate processing device.