CN110040680A - The MEMS microgravity sensor chip with quasi- zero stiffness characteristic is preloaded based on electric heating - Google Patents
The MEMS microgravity sensor chip with quasi- zero stiffness characteristic is preloaded based on electric heating Download PDFInfo
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- CN110040680A CN110040680A CN201910319089.0A CN201910319089A CN110040680A CN 110040680 A CN110040680 A CN 110040680A CN 201910319089 A CN201910319089 A CN 201910319089A CN 110040680 A CN110040680 A CN 110040680A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V7/00—Measuring gravitational fields or waves; Gravimetric prospecting or detecting
- G01V7/02—Details
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
Abstract
The MEMS microgravity sensor chip with quasi- zero stiffness characteristic is preloaded based on electric heating, including monocrystalline substrate, silicon dioxide insulating layer is grown in monocrystalline substrate, and monocrystal silicon structure layer is bonded on silicon dioxide insulating layer, makes MEMS acceleration sensor chip in monocrystal silicon structure layer；MEMS acceleration sensor chip includes chi frame, its quadrangle is respectively equipped with 1 group of electrode anchor point, the electrothermal drive unit of V-type beam composition is connected between every group of electrode anchor point, V-type beam is connected with intermediate arm, intermediate arm is connected by limit self mechanism, spring with mass block, limit self mechanism and chi frame cooperation；Except electrode anchor point and chi frame, monocrystalline substrate and silicon dioxide insulating layer below rest part are corroded；Axial displacement load is carried out to spring using electrocaloric effect, makes mass block in one section of the vertical acquisition operation interval with quasi- zero stiffness under the premise of not reducing spring vertical stiffness, can be used for microgravity acceleration detection, has the characteristics that structure simply waits.
Description
Technical field
The present invention relates to acceleration transducer technical field, in particular to a kind of preloaded based on electric heating has quasi- zero stiffness
The MEMS microgravity sensor chip of characteristic.
Background technique
Earth gravitational field contains physical message abundant, with human production activity gradually in depth under, gravity accelerate
The measurement environment and index of degree become more harsh, and people are for high-resolution, high-precision microgravity acceleration detection technology
Demand it is more eager.It is small in size, low energy consumption, MEMS with high accuracy (MEMS) as the iteration of manufacturing technology develops
Acceleration transducer increasingly has the trend for replacing conventional acceleration sensor to become mainstream.Either utilize optics, capacitor
Or the measurement method of resonant mode, having highly sensitive spring mass system is to realize the core knot of low g value acceleration analysis
Structure, it is significant to high-precision microgravimetry field.
Sandia National Labs proposed acceleration sensing in a kind of face based on sub-micron wavelength optical grating detection technology
Device, the sensor have (1nano-g=9.81 × 10 nano-g-9m/s2) resolution ratio；It is hanged using four groups of fold-type springs
Mass block is hung, has obtained high-resolution signal, but itself spring mass system in conjunction with the difference optical grating construction of nano-scale
Resonance frequency is not too much low, and the sensitivity of chip body structure also has room for promotion.
University of Glasgow Middlemiss et al. applies to MEMS manufacturing process on acceleration transducer, utilizes rebound
Spring structure carrys out the spring mass system of design acceleration sensor, has obtained the system with ultralow in plane vibration resonance frequency；
The but anti-spring feature size very little, manufacturing process is required it is very high, and the shortcomings that there are narrower bandwidths.
In conclusion since the rigidity in the sensitivity of spring-mass system in the vertical direction and its this direction is into
Inverse ratio, if reducing the vertical rigidity of spring merely in order to improve its sensitivity, the bearing capacity of system also declines therewith, i.e.,
The mass block quality of connection declines and the acceleration that can bear also very little, so existing in-plane moving MEMS acceleration transducer
The sensitive direction rigidity of main structure can't be made very low, and mass block sensitivity is also therefore limited, the resolution ratio of low g value detection
It is still to be hoisted.
Summary of the invention
In order to overcome the disadvantages of the above prior art, being preloaded the object of the present invention is to provide one kind based on electric heating has standard
The MEMS microgravity sensor chip of zero stiffness characteristic carries out axial displacement load to spring using electrocaloric effect, not straight
Connecing makes mass block obtain one section in vertical direction under the premise of reducing spring vertical stiffness have highly sensitive operation interval, together
When do not change original pair of mass block quality of system or the bearing capacity compared with high acceleration, so as to be used for microgravity acceleration value
Detection, and have the characteristics that can mass, low cost, structure it is simple.
In order to achieve the above objectives, the technical scheme adopted by the invention is that:
It is a kind of to preload the MEMS microgravity sensor chip with quasi- zero stiffness characteristic, including monocrystalline silicon lining based on electric heating
Bottom 1, growth has silicon dioxide insulating layer 2 in monocrystalline substrate 1, and monocrystal silicon structure layer 3 is bonded on silicon dioxide insulating layer 2,
It is deposited with metal electrode layer 4 on the electrode anchor point 3-2 of monocrystal silicon structure layer 3, production has MEMS to add in monocrystal silicon structure layer 3
Velocity sensor chip；
The MEMS acceleration sensor chip, including chi frame 3-7, the quadrangle of chi frame 3-7 are respectively equipped with 1
The V-type beam that array structure is connected between group electrode anchor point 3-2, every group of two electrode anchor point 3-2 forms an electrothermal drive
Unit 3-1, one end that V-type beam intermediate lateral is connected with an intermediate arm 3-3, intermediate arm 3-3 and limit self mechanism 3-4 connect
It connects, limit self mechanism 3-4 and chi frame 3-7 cooperation, the other end of limit self mechanism 3-4 and the head end of spring 3-5 connect
It connects, the tail end of spring 3-5 is connected with mass block 3-6；Electrothermal drive unit 3-1, intermediate arm 3-3, limit self mechanism 3-4, bullet
Spring 3-5, mass block 3-6 constitute the main part of sensor chip, are manufactured by integrated MEMS technology, are fixed company
It connects；Remove electrode anchor point 3-2 and chi frame 3-7, monocrystalline substrate 1 and silicon dioxide insulating layer 2 below rest part
It will be corroded, the main part of sensor chip is made to become hanging structure；
After electrothermal drive unit 3-1 is axially loaded to spring 3-5 progress, MEMS acceleration sensor chip can be changed and existed
The linear rigidity of its sensitive direction can be realized MEMS acceleration sensing by changing on-load voltage and spring 3-5 structural parameters
The quasi- zero stiffness section of device chip it is adjustable.
The limit self mechanism 3-4 uses cam pressing self-locking structure, acts on down and moving along loading force, and with
Vertical extruding occurs for the circular arc of chi frame 3-7, compressed by the circular arc of chi frame 3-7 to be formed it is self-locking.
The V-type beam unilateral side beam length of the electrothermal drive unit 3-1 is 1000~1200 μm, and width is 30~40 μm, V-type
Angle is 166~172 ° among beam, and the spacing between V-type beam is 70~80 μm.
The spring 3-5 uses Euler's buckling girder construction, and deck-siding is 30~34 μm, and both ends span is 3000~3100
μm, center deflection is away from being 55~60 μm.
The growth thickness of the silicon dioxide insulating layer 2 is 2~3 μm.
The monocrystal silicon structure layer 3 with a thickness of 40 μm, planar dimension is 13mm × 16mm.
Compared with prior art, the invention has the benefit that
It is that every spring is equipped with electrothermal drive unit, electricity on the basis of the layout for the spring suspended mass being arranged symmetrically
The input terminal of thermal drivers unit is low-voltage dc power supply, and element constitutes simple.After completing chip and integrally manufacturing, imitated using electric heating
Axial displacement load should be carried out to spring, four groups of springs is made to be in the pretightning force state being pressurized in initial rest position.Pass through conjunction
The parameters such as reason design electrothermal drive unit, spring sizes, precompressed amount, can make under the premise of directly not reducing spring vertical stiffness
Force-displacement curve of the mass block near initial rest position be modulated into it is non-linear, i.e., in a certain range along shaking in face
There is quasi- zero stiffness characteristic not reduce original pair of mass block quality of system or the bearing capacity compared with high acceleration simultaneously in dynamic direction,
By changing on-load voltage and spring structure parameter, quasi- zero stiffness siding-to-siding block length is also able to achieve adjustable, i.e., change work as needed
Make interval range.As a result, in the case where mass block weight is certain, vibration of the mass block near equilbrium position is amplified, spirit
Sensitivity is improved as much as possible.
Chip structure of the present invention is simple, can relatively easily be manufactured using mature micro-nano process.Afterwards
The continuous measurement that microgravity acceleration can be carried out in conjunction with the high-resolution displacement detecting technology such as light difference, grating, and
It can easily be integrated into that small in size, precision is high, the microgravity acceleration transducer product of high resolution, be suitable for low frequency signal
Detection, can meet application and the market demand well.
Detailed description of the invention
Fig. 1 is three-dimensional structure shaft side figure of the invention.
Fig. 2 is the main view of monocrystal silicon structure layer 3 of the invention.
Fig. 3 is the energization load self-locking state main view of monocrystal silicon structure layer 3 of the invention.
Fig. 4 is electrothermal drive unit 3-1 and limit self mechanism 3-4 stress state schematic diagram of the invention.
Fig. 5 is stress diagram after spring mass block load of the invention.
Fig. 6 is power-displacement curve figure after spring mass block load of the invention.
Specific embodiment
It elaborates with reference to the accompanying drawings and embodiments to the present invention.
Referring to Fig.1, a kind of MEMS microgravity sensor chip preloaded based on electric heating with quasi- zero stiffness characteristic, including
Monocrystalline substrate 1, growth has silicon dioxide insulating layer 2 in monocrystalline substrate 1, and growth thickness is 2~3 μm, silicon dioxide insulator
It is bonded with monocrystal silicon structure layer 3 on layer 2, metal electrode layer 4 is deposited on the electrode anchor point 3-2 of monocrystal silicon structure layer 3, in list
Production has MEMS acceleration sensor chip in crystal silicon structure sheaf 3；The monocrystal silicon structure layer 3 with a thickness of 40 μm, plane
Having a size of 13mm × 16mm.
Referring to Fig. 2 and Fig. 3, the MEMS acceleration sensor chip, including chi frame 3-7, chi frame 3-7's
Quadrangle is respectively equipped with 3 groups of V-type beams that array structure is connected between 1 group of electrode anchor point 3-2, every group of two electrode anchor point 3-2
An electrothermal drive unit 3-1 is formed, 3 groups of V-type beam intermediate laterals are connected with an intermediate arm 3-3, and intermediate arm 3-3 and limit are certainly
One end of latch mechanism 3-4 connects, limit self mechanism 3-4 and chi frame 3-7 cooperation, the other end of limit self mechanism 3-4
It is connected with the head end of spring 3-5, the tail end of spring 3-5 is connected with mass block 3-6；Electrothermal drive unit 3-1, intermediate arm 3-3, limit
Position self-locking mechanism 3-4, spring 3-5, mass block 3-6 constitute the main part of sensor chip, pass through integrated MEMS technology
Manufacture, is to be fixedly connected；Remove electrode anchor point 3-2 and chi frame 3-7,1 He of monocrystalline substrate below rest part
Silicon dioxide insulating layer 2 will be corroded, and the main part of sensor chip is made to become hanging structure；Due to spring 3-5 head and the tail
Hold connection limit self mechanism 3-4, mass block 3-6 than spring 3-5 have bigger structure size, that is, can be considered rigid body without
Deformation occurs, thus the deformation passed over only makes spring 3-5 that buckling occur；Electrothermal drive unit 3-1 expanded by heating pusher
The spring 3-5 that moves axial movement, the limit self mechanism 3-4 being attached thereto is moved to be lockked until being limited by chi frame 3-7,
The end spring 3-5 is fixed up in a position, i.e. produces certain decrement inside spring 3-5, so that mass block 3-6 be made to exist
Four groups of compression spring 3-5 supports are lower to realize the single freedom of motion in chip plane.
Cam pressing self-locking structure is used, is acted on down along loading force referring to Fig. 4, the limit self mechanism 3-4
It is mobile, and vertical extruding occurs with the circular arc of chi frame 3-7, when the left end limit self mechanism 3-4 is with chi frame 3-7's
When contact aside, V-type beam electrothermal drive unit 3-1 expansion stroke reaches the design upper limit, while by the circular arc of chi frame 3-7
Place's compression forms self-locking.
The V-type beam unilateral side beam length of the electrothermal drive unit 3-1 is 1000~1200 μm, and width is 30~40 μm, V-type
Angle is 166~172 ° among beam, and the spacing between V-type beam is 70~80 μm；The spring 3-5 uses Euler's buckling beam knot
Structure, deck-siding are 30~34 μm, and both ends span is 3000~3100 μm, and center deflection is away from being 55~60 μm.
The operation principle of the present invention is that:
The electrocaloric effect and thermal expansion effects of silicon materials is utilized.It is single after applying DC voltage on metal electrode layer 4
The electrothermal drive unit 3-1 of crystal silicon material has electric current and passes through, due to monocrystalline silicon there are resistance so corresponding heat can be generated,
Under heat transfer, thermal convection and the collective effect of heat radiation, the heat of generation and the heat of dissipation may eventually reach balance, electricity
Temperature on thermal drivers unit 3-1 can also occur under temperature field inside the stable state higher than environment temperature, silicon materials
Expansion, since its boundary is connect with electrode anchor point 3-2, the vertical shift of electrothermal drive unit 3-1 is limited, finally can only be along
Its axis of symmetry generates distorted movement；Since limit self mechanism 3-4, the mass block 3-6 of the connection of the two ends spring 3-5 compare spring
3-5 has bigger structure size, that is, can be considered rigid body without deformation, thus the deformation passed over only makes euler beam
Buckling occurs；Push the spring 3-5 is moved axially after electrothermal drive unit 3-1 expanded by heating, the limit self mechanism being attached thereto
3-4 is moved to be lockked until being limited by chi frame 3-7；The end the spring 3-5 position Ye Yi is fixed up, i.e. spring 3-5
Inside produces certain decrement, and mass block 3-6 can carry out list along sensitive direction certainly in the case where four groups of compression spring 3-5 are supported
It is moved by degree.For Euler's girder construction that both ends are fixed, axial load P and axial displacement y relationship are writeable are as follows:
L is the original span of both ends of the spring, q0It deflects for the center of beam away from Pe=π2EI/L2Facing for buckling occurs for euler beam
Boundary's load, E are the elasticity modulus of monocrystalline silicon, and I is the moment of inertia of euler beam cross section.
Referring to Fig. 5, two sides Euler's buckling beam has axial rigidity KAxis, since the boundary condition of Euler's buckling beam head end is solid
It is fixed, thus its support the simplified model of mass block 3-6 that can be equivalent to spring head end hinged to add a rigidity be constant KIt hangs downHang down
Straight spring；Left figure is stress model when chip is in initial rest position, due to symmetrical above and below therefore can be reduced to a quality
Block 3-6 is supported by one group of compression spring 3-5；When mass block 3-6 is offset downward and after new position balance, stress model is such as
Shown in right figure；Consider the case where mass block 3-6 is offset downward from equilbrium position, then dimensionless vertical force suffered by mass block 3-6With equilbrium position dimensionless offsetRelationship it is writeable are as follows:
F is vertical force suffered by mass block 3-6, rigidity ratioKIt hangs downFor the vertical of spring mass block
Rigidity, compression ratioA is the span at both ends after euler beam is pressurized, For coordinate origin without
Dimension offset, For both ends of the spring dimensionless span.
It willIt is rightDerivation obtains the catenary motion rigidity of system?When, it enablesIt obtains meeting standard zero
The λ in rigidity section0:
Referring to Fig. 6, when on-load voltage, spring 3-5 structural parameters meet λ0Required condition, then chip is in initial rest position
The nonlinear characteristic with quasi- zero stiffness is just presented in neighbouring power-displacement curve, is tied by changing on-load voltage and spring 3-5
Structure parameter, quasi- zero stiffness siding-to-siding block length are also able to achieve adjustable.
In the microgravity acceleration analysis of low frequency, the pass of acceleration A suffered by mass block and deviation of balance position amount u
It is writeable are as follows:
A=ω0 2·u,
For system undamped natural angular frequency, k, m are respectively rigidity and quality on system direction.It is logical
The means such as optics, capacitor are crossed to detect displacement u, acceleration suffered by mass block can be obtained.In the present invention, since chip exists
It works in quasi- zero stiffness section, rigidity can level off to 0, therefore in the case where suffered acceleration A is certain, and mass block generates
Displacement u can become very big, i.e. sensitivity is greatly improved, to be highly suitable for the low frequency signal detection of low g value.
Claims (6)
1. a kind of preload the MEMS microgravity sensor chip with quasi- zero stiffness characteristic, including monocrystalline substrate based on electric heating
(1), it is characterised in that: there is silicon dioxide insulating layer (2) growth in monocrystalline substrate (1), silicon dioxide insulating layer is bonded on (2)
There are monocrystal silicon structure layer (3), metal electrode layer (4) is deposited on the electrode anchor point (3-2) of monocrystal silicon structure layer (3), in list
Production has MEMS acceleration sensor chip in crystal silicon structure sheaf (3)；
The MEMS acceleration sensor chip, including chi frame (3-7), the quadrangle of chi frame (3-7) are respectively equipped with 1
It organizes electrode anchor point (3-2), the V-type beam that array structure is connected between every group of two electrode anchor points (3-2) forms an electric heating
Driving unit (3-1), V-type beam intermediate lateral are connected with an intermediate arm (3-3), intermediate arm (3-3) and limit self mechanism (3-
4) one end connection, limit self mechanism (3-4) and chi frame (3-7) cooperate, the other end of limit self mechanism (3-4) with
The head end of spring (3-5) connects, tail end and mass block (3-6) connection of spring (3-5)；Electrothermal drive unit (3-1), intermediate arm
(3-3), limit self mechanism (3-4), spring (3-5), mass block (3-6) constitute the main part of sensor chip, pass through
Integrated MEMS technology manufacture, is to be fixedly connected；Electrode anchor point (3-2) and chi frame (3-7) are removed, under rest part
The monocrystalline substrate (1) and silicon dioxide insulating layer (2) in face will be corroded, and the main part of sensor chip is made to become hanging
Structure；
After electrothermal drive unit (3-1) is axially loaded to spring (3-5) progress, MEMS acceleration sensor chip can be changed and existed
The linear rigidity of its sensitive direction can be realized MEMS acceleration biography by changing on-load voltage and spring (3-5) structural parameters
The quasi- zero stiffness section of sensor chip it is adjustable.
2. a kind of MEMS microgravity sensor preloaded based on electric heating with quasi- zero stiffness characteristic according to claim 1
Chip, it is characterised in that: the limit self mechanism (3-4) uses cam pressing self-locking structure, acts on along loading force
Lower movement, and vertical extruding occurs with the circular arc of chi frame (3-7), shape is compressed by the circular arc of chi frame (3-7)
At self-locking.
3. a kind of MEMS microgravity sensor preloaded based on electric heating with quasi- zero stiffness characteristic according to claim 1
Chip, it is characterised in that: the V-type beam unilateral side beam length of the electrothermal drive unit (3-1) is 1000~1200 μm, width 30
~40 μm, V-type beam centre angle is 166~172 °, and the spacing between V-type beam is 70~80 μm.
4. a kind of MEMS microgravity sensor preloaded based on electric heating with quasi- zero stiffness characteristic according to claim 1
Chip, it is characterised in that: the spring (3-5) uses Euler's buckling girder construction, and deck-siding is 30~34 μm, and both ends span is
3000~3100 μm, center deflection is away from being 55~60 μm.
5. a kind of MEMS microgravity sensor preloaded based on electric heating with quasi- zero stiffness characteristic according to claim 1
Chip, it is characterised in that: the growth thickness of the silicon dioxide insulating layer (2) is 2~3 μm.
6. a kind of MEMS microgravity sensor preloaded based on electric heating with quasi- zero stiffness characteristic according to claim 1
Chip, it is characterised in that: the monocrystal silicon structure layer (3) with a thickness of 40 μm, planar dimension is 13mm × 16mm.
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| CN110588695A (en) * | 2019-07-30 | 2019-12-20 | 同济大学 | Quasi-zero rigidity secondary suspension system of railway vehicle |
| CN113565922A (en) * | 2021-08-23 | 2021-10-29 | 北京理工大学 | Integrated quasi-zero stiffness vibration isolation buffering element and vibration isolation buffering assembly |
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