CN110032236B - DC sensor circuit with arbitrary bias voltage output - Google Patents
DC sensor circuit with arbitrary bias voltage output Download PDFInfo
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- CN110032236B CN110032236B CN201910362209.5A CN201910362209A CN110032236B CN 110032236 B CN110032236 B CN 110032236B CN 201910362209 A CN201910362209 A CN 201910362209A CN 110032236 B CN110032236 B CN 110032236B
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- 238000001514 detection method Methods 0.000 claims abstract description 40
- 238000011896 sensitive detection Methods 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims 2
- 238000007142 ring opening reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000000087 stabilizing effect Effects 0.000 description 8
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000007849 functional defect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
Abstract
The invention discloses a direct current sensor circuit with any bias voltage output, which comprises an opening magnetic ring, a booster circuit, a reference voltage circuit, a magneto-sensitive detection circuit, a voltage dividing network and a voltage follower circuit, wherein the booster circuit, the reference voltage circuit, the magneto-sensitive detection circuit is used for detecting the magnetic field intensity in the opening of the opening magnetic ring and outputting the direct current voltage with the bias voltage, the voltage dividing network is used for dividing the direct current voltage with the bias voltage output by the magneto-sensitive detection circuit, and the direct current power supply voltage Vcc within the range of 4.5V-5.5V is raised to a certain value Vbst through the booster circuit during normal operation. Vbst is converted to an accurate +5.0v by a reference voltage regulator circuit to power the magnetosensitive detection circuit. The magneto-sensitive detection circuit detects the magnetic field intensity in the opening magnetic ring and outputs a direct-current voltage Vo1 with bias voltage, the voltage Vo1 forms a voltage division network by voltage division resistors, then the voltage Vo2 is output, and the voltage Vo2 directly outputs Vout after passing through the voltage follower circuit.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a direct current sensor circuit with arbitrary bias voltage output.
Background
In recent years, hall current sensor products are widely applied to the military and civil fields of aviation, aerospace, communication, instruments, metallurgy, railway and the like due to the advantages of good precision and linearity, high isolation between detection voltage and output signals, high reliability, low power consumption, convenient maintenance and replacement and the like. In many applications, the zero output of the hall current sensor is required to be 0V or 2.5V with reference, i.e. the detected current is zero, and the sensor output voltage is 0V or 2.5V; when the detected current is in a negative direction, the output voltage of the sensor is a voltage value smaller than the reference value; when the positive direction of the current is detected, the output voltage of the sensor is a voltage value larger than the reference value, and the detected current and the output voltage change form a linear relation. The zero output voltage of the conventional Hall current sensor in the market is 0V or 2.5V, and no other reference value output products exist. However, in application, products outputting other reference voltages are required, and zero output of the existing hall current sensor is 0V or 2.5V of the reference, so that the output of other reference voltages cannot be met, and obvious functional defects exist.
Disclosure of Invention
The invention aims to provide a sensor circuit for outputting direct current by any bias voltage, which is used for solving the problem that the existing sensor in the prior art cannot meet the reference voltage requirements except 0V and 2.5V.
The invention solves the problems by the following technical proposal:
the direct current sensor circuit with any bias voltage output comprises an opening magnetic ring, a booster circuit, a reference voltage circuit, a magnetosensitive detection circuit, a voltage dividing network and a voltage follower circuit, wherein the booster circuit, the reference voltage circuit, the magnetosensitive detection circuit is used for detecting the magnetic field intensity in an opening of the opening magnetic ring and outputting direct current voltage with bias voltage, the voltage dividing network is used for dividing the direct current voltage with bias voltage output by the magnetosensitive detection circuit, and the voltage follower circuit is used for boosting the direct current supply voltage Vcc within the range of 4.5V-5.5V to a certain value Vbst through the booster circuit in normal operation. Vbst is converted to an accurate +5.0v by a reference voltage regulator circuit to power the magnetosensitive detection circuit. The magneto-sensitive detection circuit detects the magnetic field intensity in the opening magnetic ring and outputs a direct-current voltage Vo1 with bias voltage, and the voltage Vo1 is output by a voltage dividing network consisting of voltage dividing resistors. Vo2 directly outputs Vout after voltage follower circuit, and voltage follower's effect is the load capacity that improves sensor circuit, avoids external load to cause the influence to the output voltage of sensor, fine solution prior art in the sensor can't satisfy the problem of reference voltage demand except 0V and 2.5V.
Preferably, the booster circuit comprises an LTC1515 booster chip, wherein a pin 3 is connected with a resistor R1 to a pin 8 in parallel and output, and a pin 3 is connected with a resistor R8 to a pin 4 and then connected with GND; a capacitor C1 is connected between the No. 5 pin and the No. 6 pin, and the No. 7 pin is connected with a power supply voltage Vcc.
Preferably, the reference voltage stabilizing circuit comprises a resistor R9 connected with the voltage boosting circuit, a +5V voltage connected with the other end of the resistor R9, a No. 2 pin of a TL431 voltage stabilizing power supply chip D1, an adjustable resistor R2 and a capacitor C10, wherein the other end of the R2 is commonly connected with a No. 1 pin of the D1, the other ends of the adjustable resistor R5 and R11, and the other ends of the R5, R11 and C10 are commonly connected with a No. 3 pin of the D1 and then connected with GND; in this circuit, R9 is a limiting resistor for limiting the current of the subsequent stage. R2, R5 and R11 are voltage regulating resistors and are used for regulating the output voltage to be accurate 5V.
Preferably, the magnetosensitive detection circuit includes a linear output magnetosensitive chip U3, a Vcc pin of the U3 is connected with +5v voltage GND pin and GND, vout is connected with an anode of an operational amplifier U4, a cathode of the U4 is commonly connected with resistors R3 and R4, another end of the R3 is connected with +2.5v voltage, another end of the R4 is connected with an output end of the U4, a No. 4 pin of the U4 is connected with GND, and a No. 8 pin is connected with a power supply voltage Vcc. When the detected current is zero, the magnetic flux in the opening magnetic ring is zero, and the zero output voltage of the magnetosensitive chip is 2.5V.
Preferably, the relationship between the dc voltage with bias voltage output by the magnetosensitive detection circuit and the magnetic field intensity in the opening magnetic ring is:
Vo1＝2.5V+K*ΔV
wherein Vo1 is a direct current voltage with bias voltage, 2.5V is a zero output voltage of the magneto-sensitive detection circuit, the voltage is half of a power supply voltage of the magneto-sensitive detection circuit, deltaV is sensitivity of the magneto-sensitive detection circuit, namely a variable quantity of output voltage of the magneto-sensitive chip caused by unit detection current change, K is a magnification factor of the magneto-sensitive detection circuit, and the variable quantity can be regulated by an external resistor and the like; when the magnetic force line vertically passes through the front surface of the magnetosensitive chip, the chip outputs a positive variable voltage, namely DeltaV >0; otherwise, the negative voltage variation is output, i.e. DeltaV <0.
U4 is an operational amplifier, and R3 and R4 are amplification factor adjusting resistors. The output voltage of the magneto-sensitive chip is compared with the reference 2.5V voltage to be amplified, namely the output Vo1, and according to the principle of 'virtual short' and 'virtual break' of the operational amplifier, the output voltage can be calculated:
this is the output voltage signal that has a precise 2.5V bias voltage output and that is linear with the sense current.
Preferably, the voltage dividing network comprises a resistor R6 connected with the magnetosensitive detection circuit, the other end of the resistor R6 is connected with an output end and R7, the output end is connected with the voltage follower circuit, and the other end of the R7 is connected with GND.
Preferably, the relationship between the output of the dc voltage with bias voltage output by the magnetosensitive detection circuit and the output of the dc voltage with bias voltage after passing through the voltage dividing network is:
wherein Vo2 is the voltage outputted after passing through the voltage dividing network, and Vo1 is the DC voltage with bias voltage outputted by the magnetosensitive detection circuit.
Preferably, the voltage follower circuit includes an operational amplifier U2, the positive pole of the U2 is connected to the voltage dividing network, the negative pole is directly connected to the output end and then outputs to the outside, the pin No. 4 of the U2 is connected to GND, and the pin No. 7 is connected to v+.
Preferably, the voltage dividing network and the voltage follower circuit can be replaced by a follower amplifier circuit, the follower amplifier circuit comprises an operational amplifier U2B, the negative electrode of the operational amplifier U2B is connected with the magnetosensitive detection circuit, the positive electrode of the operational amplifier U2B is commonly connected with resistors R8 and R9, the other end of the resistor R8 is connected with GND, and the other end of the resistor R9 is connected with the output end of the operational amplifier U2B and then is output outwards.
Compared with the prior art, the invention has the following advantages:
(1) When the invention works normally, the direct current power supply voltage Vcc within the range of 4.5V-5.5V is raised to a certain value Vbst through the booster circuit. Vbst is converted to an accurate +5.0v by a reference voltage regulator circuit to power the magnetosensitive detection circuit. The magnetic-sensing detection circuit detects the magnetic field intensity in the opening magnetic ring and outputs a direct-current voltage Vo1 with bias voltage, wherein Vo1=2.5V+K is delta V, 2.5V is zero output voltage of the magnetic-sensing detection circuit, and the voltage is half of the power supply voltage of the magnetic-sensing detection circuit, namely 2.5V; k is the amplification factor of the magnetosensitive detection circuit and can be adjusted by external resistors and the like; the delta V is the sensitivity of the magneto-sensitive detection circuit, namely the variation of the output voltage of the magneto-sensitive chip caused by the unit detection current variation, and the variation is determined by a Hall device in the magneto-sensitive chip. After Vo1 passes through a voltage dividing network composed of voltage dividing resistors, a voltage Vo2 is output, and vo2=f×vo1, wherein F is a dividing coefficient of the voltage dividing network. Vo2 directly outputs Vout after passing through the voltage follower circuit, and the function of the voltage follower is to improve the carrying capacity of the sensor circuit and avoid the influence of an external load on the output voltage of the sensor.
(2) The voltage dividing network and the voltage follower circuit can be replaced by the follower amplifier circuit, the follower amplifier circuit comprises an operational amplifier U2B, the negative electrode of the operational amplifier U2B is connected with the magnetosensitive detection circuit, the positive electrode of the operational amplifier U2B is commonly connected with resistors R8 and R9, the other end of the resistor R8 is connected with GND, and the other end of the resistor R9 is connected with the output end of the operational amplifier U2B and then is externally output.
Drawings
FIG. 1 is a schematic block diagram of a sensing circuit configuration of the present invention;
FIG. 2 is a schematic diagram of a boosting circuit according to the present invention;
FIG. 3 is a schematic diagram of a voltage stabilizing circuit according to the present invention;
FIG. 4 is a schematic diagram of a magnetosensitive detection circuit of the present invention;
FIG. 5 is a schematic diagram of a voltage divider network circuit according to the present invention;
FIG. 6 is a schematic diagram of a voltage follower circuit according to the present invention;
FIG. 7 is a schematic block diagram of a sensing circuit structure according to embodiment 2 of the present invention;
fig. 8 is a schematic circuit diagram of a follower amplifier circuit in embodiment 2 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Example 1:
referring to fig. 1, a direct current sensor circuit with any bias voltage output comprises an opening magnetic ring, a booster circuit, a reference voltage circuit, a magnetosensitive detection circuit, a voltage divider network and a voltage follower circuit, wherein the booster circuit, the reference voltage circuit, the magnetosensitive detection circuit is used for detecting the magnetic field intensity in the opening of the opening magnetic ring and outputting the direct current voltage with the bias voltage, and the voltage divider network is used for dividing the direct current voltage with the bias voltage output by the magnetosensitive detection circuit.
As shown in fig. 2, the booster circuit includes an LTC1515 booster chip, where the pin 3 is connected to the resistors R1 to 8 and output in parallel, and the pin 3 is connected to the resistors R8 to 4 and then connected to GND; a capacitor C1 is connected between the No. 5 pin and the No. 6 pin, and the No. 7 pin is connected with a power supply voltage Vcc. As shown in fig. 3, the reference voltage stabilizing circuit includes a resistor R9 connected to the voltage boosting circuit, a +5v voltage connected to the other end of the resistor R9, pin No. 2 of the TL431 voltage stabilizing power chip D1, an adjustable resistor R2, and a capacitor C10, where the other end of the R2 is commonly connected to pin No. 1 of the D1, and the other ends of the adjustable resistor R5 and R11, and the other ends of the R5, R11, and C10 are commonly connected to pin No. 3 of the D1, and then connected to GND. As shown in fig. 4, the magnetosensitive detection circuit includes a linear output magnetosensitive chip U3, wherein a Vcc pin of the U3 is connected with +5v voltage GND pin and GND, vout is connected with an anode of an operational amplifier U4, a cathode of the U4 is commonly connected with resistors R3 and R4, another end of the R3 is connected with +2.5v voltage, another end of the R4 is connected with an output end of the U4, a No. 4 pin of the U4 is connected with GND, and a No. 8 pin is connected with a power supply voltage Vcc. As shown in fig. 5, the voltage dividing network includes a resistor R6 connected to the magnetosensitive detection circuit, the other end of R6 is connected to an output terminal and R7, the output terminal is connected to the voltage follower circuit, and the other end of R7 is connected to GND. As shown in fig. 6, the voltage follower circuit includes an operational amplifier U2, where the positive electrode of the U2 is connected to the voltage dividing network, the negative electrode is directly connected to the output end and then output to the outside, the pin No. 4 of the U2 is connected to GND, and the pin No. 7 is connected to v+.
In normal operation, the DC supply voltage Vcc in the range of 4.5V-5.5V is raised to a certain value Vbst, such as 7V, or other settable value by the boost circuit. Vbst is converted to an accurate +5.0v by a reference voltage regulator circuit to power the magnetosensitive detection circuit. The magnetic-sensing detection circuit detects the magnetic field intensity in the opening magnetic ring and outputs a direct-current voltage Vo1 with bias voltage, wherein Vo1=2.5V+K is delta V, 2.5V is zero output voltage of the magnetic-sensing detection circuit, and the voltage is half of the power supply voltage of the magnetic-sensing detection circuit, namely 2.5V; k is the amplification factor of the magnetosensitive detection circuit and can be adjusted by external resistors and the like; the delta V is the sensitivity of the magneto-sensitive detection circuit, namely the variation of the output voltage of the magneto-sensitive chip caused by the unit detection current variation, and the variation is determined by a Hall device in the magneto-sensitive chip. When the magnetic force line vertically passes through the front surface of the magnetosensitive chip, the chip outputs a positive variable voltage, namely DeltaV >0; otherwise, the negative voltage variation is output, i.e. DeltaV <0. U4 is an operational amplifier, and R3 and R4 are amplification factor adjusting resistors. The output voltage of the magneto-sensitive chip is compared with the reference 2.5V voltage to be amplified, namely the output Vo1, and according to the principle of 'virtual short' and 'virtual break' of the operational amplifier, the output voltage can be calculated:
this is the output voltage signal that has a precise 2.5V bias voltage output and that is linear with the sense current.
And Vo1 outputs a voltage Vo2 after a voltage dividing network is formed by voltage dividing resistors, wherein Vo2 = F is Vo1, F is a voltage dividing coefficient of the voltage dividing network, and R6 and R7 are voltage dividing resistors, so that the accuracy of the sensor is improved, and a high-accuracy resistor can be selected. According to the principle of partial pressure, it can be deduced that:
vo2 directly outputs Vout after passing through the voltage follower circuit, and the function of the voltage follower is to improve the carrying capacity of the sensor circuit and avoid the influence of an external load on the output voltage of the sensor.
Based on the-20A-0A- +20A direct-current Hall current sensor designed by the invention, the direct-current Hall current sensor linearly outputs the direct-current voltage of 0.25V-1.25V-2.25V after detection.
The test results are shown in the following table:
from the result, the zero deviation of the Hall current sensor is 1mV, the maximum deviation in the rated current range is 4mV, and the nonlinear error is less than 0.18%.
Example 2
As shown in fig. 7, on the basis of embodiment 1, a dc sensor circuit for outputting any bias voltage includes an open magnetic loop, and further includes a booster circuit, a reference voltage circuit, a magnetosensitive detection circuit for detecting the magnetic field intensity in the open magnetic loop and outputting a dc voltage having a bias voltage, and a follower amplifier circuit, which are sequentially arranged from an input end to an output end.
As shown in fig. 2, the booster circuit includes an LTC1515 booster chip, where the pin 3 is connected to the resistors R1 to 8 and output in parallel, and the pin 3 is connected to the resistors R8 to 4 and then connected to GND; a capacitor C1 is connected between the No. 5 pin and the No. 6 pin, and the No. 7 pin is connected with a power supply voltage Vcc. As shown in fig. 3, the reference voltage stabilizing circuit includes a resistor R9 connected to the voltage boosting circuit, a +5v voltage connected to the other end of the resistor R9, pin No. 2 of the TL431 voltage stabilizing power chip D1, an adjustable resistor R2, and a capacitor C10, where the other end of the R2 is commonly connected to pin No. 1 of the D1, and the other ends of the adjustable resistor R5 and R11, and the other ends of the R5, R11, and C10 are commonly connected to pin No. 3 of the D1, and then connected to GND. As shown in fig. 4, the magnetosensitive detection circuit includes a linear output magnetosensitive chip U3, wherein a Vcc pin of the U3 is connected with +5v voltage GND pin and GND, vout is connected with an anode of an operational amplifier U4, a cathode of the U4 is commonly connected with resistors R3 and R4, another end of the R3 is connected with +2.5v voltage, another end of the R4 is connected with an output end of the U4, a No. 4 pin of the U4 is connected with GND, and a No. 8 pin is connected with a power supply voltage Vcc. As shown in fig. 8, the follower amplifying circuit includes an operational amplifier U2B with a negative electrode connected to the magnetosensitive detecting circuit, wherein the positive electrode of the operational amplifier U2B is commonly connected with resistors R8 and R9, the other end of R8 is connected with GND, and the other end of R9 is connected with the output end of U2B and then is output.
The reference voltage higher than 2.5V can be output through the circuit, and the relation between the output voltage Vout and Vo1 can be calculated according to the working principle of the amplifying circuit as follows:
if the power supply voltage is 15V, the booster circuit can be removed, and the precise voltage stabilizing circuit directly converts 15V into reference 5V.
Although the invention has been described herein with reference to the above-described illustrative embodiments thereof, the above-described embodiments are merely preferred embodiments of the present invention, and the embodiments of the present invention are not limited by the above-described embodiments, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the scope and spirit of the principles of this disclosure.
Claims (5)
1. The utility model provides a direct current sensor circuit of arbitrary bias voltage output, includes opening magnetic ring, its characterized in that: the magnetic field detector comprises an opening magnetic ring, a voltage-dividing network and a voltage follower circuit, wherein the opening magnetic ring is provided with an opening magnetic ring opening, a voltage-dividing network and a voltage follower circuit;
the booster circuit comprises an LTC1515 booster chip, wherein a pin 3 is connected with one end of a resistor R1, the other end of the resistor R1 is connected with a pin 8, the pin 8 is connected with output, meanwhile, the pin 3 is connected with one end of a resistor R8, the other end of the resistor R8 is connected with a pin 4, and the pin 4 is connected with GND; a capacitor C1 is connected between the No. 5 pin and the No. 6 pin, and the No. 7 pin is connected with a power supply voltage Vcc;
the reference voltage circuit comprises a resistor R9 connected with the booster circuit, +5V voltage connected with the other end of the resistor R9, a No. 2 pin of a TL431 stabilized power supply chip D1, an adjustable resistor R2 and a capacitor C10, wherein the other end of the resistor R2 is commonly connected with a No. 1 pin of the D1, the other ends of the adjustable resistor R5 and the adjustable resistor R11, and the other ends of the R5, the R11 and the C10 are commonly connected with a No. 3 pin of the D1 and then connected with GND;
the magneto-dependent detection circuit comprises a linear output magneto-dependent chip U3, wherein a Vcc pin of the U3 is connected with +5V voltage, a GND pin is connected with GND, a Vout is connected with the positive electrode of an operational amplifier U4, the negative electrode of the U4 is commonly connected with resistors R3 and R4, the other end of the R3 is connected with +2.5V voltage, the other end of the R4 is connected with the output end of the U4, a No. 4 pin of the U4 is connected with GND, and a No. 8 pin is connected with power supply voltage Vcc;
the relationship between the direct current voltage with bias voltage output by the magneto-sensitive detection circuit and the magnetic field intensity in the opening magnetic ring is as follows:
Vo1＝2.5V+K*ΔV
wherein Vo1 is a direct current voltage with bias voltage, 2.5V is a zero output voltage of the magneto-sensitive detection circuit, the voltage is half of a power supply voltage of the magneto-sensitive detection circuit, and DeltaV is sensitivity of the magneto-sensitive detection circuit, namely, a variation of output voltage of the magneto-sensitive chip caused by unit detection current variation.
2. The dc sensor circuit of any bias voltage output of claim 1, wherein: the voltage dividing network comprises a resistor R6 connected with the magnetosensitive detection circuit, the other end of the resistor R6 is connected with an output end and R7, the output end is connected to the voltage follower circuit, and the other end of the R7 is connected with GND.
3. The dc sensor circuit of any bias voltage output of claim 2, wherein: the relationship of the output of the direct current voltage with the bias voltage output by the magneto-sensitive detection circuit after passing through the voltage division network is as follows:
wherein Vo2 is the voltage outputted after passing through the voltage dividing network, and Vo1 is the DC voltage with bias voltage outputted by the magnetosensitive detection circuit.
4. The dc sensor circuit of any bias voltage output of claim 1, wherein: the voltage follower circuit comprises an operational amplifier U2A, the positive electrode of the U2A is connected with the voltage dividing network, the negative electrode of the U2A is directly connected with the output end and then is output outwards, the No. 4 pin of the U2A is connected with GND, and the No. 7 pin of the U2A is connected with V+.
5. The dc sensor circuit of any bias voltage output of claim 1, wherein: the voltage dividing network and the voltage follower circuit are replaced by the follower amplifier circuit, the follower amplifier circuit comprises an operational amplifier U2B, the negative electrode of the operational amplifier U2B is connected with the magnetosensitive detection circuit, the positive electrode of the operational amplifier U2B is commonly connected with resistors R8 and R9, the other end of the R8 is connected with GND, and the other end of the R9 is connected with the output end of the U2B and then is output outwards.
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| JP2009017631A (en) * | 2007-07-02 | 2009-01-22 | Seiko Epson Corp | Driver circuit and electric motor equipped therewith |
| CN101915900A (en) * | 2010-07-30 | 2010-12-15 | 石家庄吉纳科技有限公司 | Amorphous wire magneto-impedance transducer and magnetic field detection method based on amorphous wire magneto-impedance effect |
| CN102403084A (en) * | 2010-09-07 | 2012-04-04 | 中国石油天然气集团公司 | Hysteresis-damping demagnetizing method for pipeline port |
| JP2013195346A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| CN203535102U (en) * | 2013-10-29 | 2014-04-09 | 河北工业大学 | Colossal magnetoresistance effect current sensor |
| CN108183690A (en) * | 2016-12-08 | 2018-06-19 | 深圳市三诺数字科技有限公司 | A kind of audio voltage follows circuit |
| CN108375981A (en) * | 2018-02-11 | 2018-08-07 | 陕西理工大学 | Electromagnetism intelligent vehicle |
| CN108982952A (en) * | 2018-09-04 | 2018-12-11 | 广州小鹏汽车科技有限公司 | A kind of DC permanent magnet synchronous motor phase current sensing and balanced checking circuit and DC permanent magnet synchronous motor |
| CN209543180U (en) * | 2019-04-30 | 2019-10-25 | 成都新欣神风电子科技有限公司 | A kind of direct current transducer circuit of any bias voltage output |
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