CN110011179B

CN110011179B - Array stack array of asymmetric micro-disk cavity edge-emitting semiconductor lasers

Info

Publication number: CN110011179B
Application number: CN201910322106.6A
Authority: CN
Inventors: 晏长岭; 杨静航; 刘云; 冯源; 郝永芹; 逢超
Original assignee: Changchun University of Science and Technology
Current assignee: Changchun University of Science and Technology
Priority date: 2019-04-22
Filing date: 2019-04-22
Publication date: 2020-08-14
Anticipated expiration: 2039-04-22
Also published as: CN110011179A

Abstract

An array stack array of an asymmetric microdisk cavity edge-emitting semiconductor laser belongs to the technical field of semiconductor lasers. In the prior art, a plurality of lines are overlapped to form a stacked array, and the technical problems of subsequent links such as beam shaping and output coupling are more prominent. In the invention, a plurality of array substrates and micro-channel heat dissipation plates are alternately stacked from bottom to top by self-heating sinking, and the array substrate is arranged at the top; the number of the array substrates is 3-5; the array substrate is composed of a substrate and a plurality of asymmetric microdisk cavities which are manufactured on the substrate through etching and arranged in an array mode, wherein the array mode means that the plurality of asymmetric microdisk cavities are respectively arranged in a line to form a front row laser line array and a rear row laser line array according to the same geometric center distance, the light emitting directions of the asymmetric microdisk cavities are the same and face the front, and the distance between the emergent light optical axis of the asymmetric microdisk cavity in the rear row laser line array and the geometric center of the closest asymmetric microdisk cavity in the front row laser line array is half of the geometric center distance.

Description

Array stack array of asymmetric micro-disk cavity edge-emitting semiconductor lasers

Technical Field

The invention relates to an array stacked array of asymmetric microdisk cavity edge-emitting semiconductor lasers, and belongs to the technical field of semiconductor lasers.

Background

In order to increase the output power of a semiconductor laser, the effect of simply increasing the power of a single tube of the semiconductor laser is limited. Therefore, in the prior art, schemes such as a semiconductor laser linear array, an array, a linear array stacking array and the like appear, and the output optical power of the semiconductor laser is greatly improved. Among them, the line array is the closest to the present invention. The linear array is formed by stacking a plurality of laser lines, in the linear array, each laser single tube is distributed in a vertical surface, which is equivalent to a vertical surface array, and the output light power is greatly improved. For example, as early as 2009, a semiconductor laser device company in germany introduced a quasi-continuous high-power semiconductor vertical stack, i.e., a line stack, in which 10 substrates, i.e., 10 semiconductor laser lines, were stacked at equal intervals in the vertical direction, the interval being 1.6mm, and up to 19 bar-shaped light-emitting units (laser monotubes) having a width of 100 μm were arranged in a line in each substrate, and the light-emitting unit interval was 500 μm. However, the stacked array is formed by stacking a plurality of linear arrays, the process difficulty is high, the height of the single tube light-emitting direction of each laser forming the vertical surface array of the laser is difficult to ensure to be consistent, the heat dissipation problem is more prominent, the size of the linear array stacked array is overlarge, the width of the example is 10.9mm, the height of the example is 16mm, and the technical problems existing in the subsequent links such as beam shaping, multi-beam bundling and output coupling are more prominent.

Disclosure of Invention

In order to improve the output optical power of a semiconductor laser light source in an array mode, reduce the difficulty of a device manufacturing process and avoid bringing new problems to a device using link, the invention provides an asymmetric micro-disk cavity edge emitting semiconductor laser array stack array.

In the array stacked array of the asymmetric microdisk cavity edge emitting semiconductor laser, as shown in fig. 1, a plurality of array substrates 2 and microchannel heat dissipation plates 3 are stacked alternately from bottom to top from a heat sink 1, and the array substrate 2 is arranged at the top; a cooling liquid micro-channel is distributed inside the micro-channel cooling plate 3; the number of the array substrates 2 is 3-5; the array substrate 2 is composed of a substrate 4 and a plurality of asymmetric microdisk cavities 5 which are manufactured on the substrate 4 by etching and are arranged in an array mode, as shown in fig. 2-5, the array mode means that the plurality of asymmetric microdisk cavities 5 are respectively arranged in a line to form a front row laser line array and a rear row laser line array according to the same geometric center distance, the light emitting directions of the asymmetric microdisk cavities 5 are the same and face the front, and the distance between the emergent light optical axis of the asymmetric microdisk cavity 5 in the rear row laser line array and the geometric center of the closest asymmetric microdisk cavity 5 in the front row laser line array is half the geometric center distance.

Compared with the existing semiconductor laser linear array stacking array, the semiconductor laser array stacking array has the technical effects that two rows of laser linear arrays are distributed on the array substrate forming the semiconductor laser array stacking array, and the rear row of laser linear arrays can normally emit light because the asymmetric micro-disk cavities in the front and rear rows of laser linear arrays are arranged in a staggered mode, namely the rear row of asymmetric micro-disk cavities and the front row of asymmetric micro-disk cavities are arranged in an inserting mode. The conventional substrate is strip-shaped, and the array substrate of the present invention is plate-shaped, so that it is easy to stack and arrange in a stack. No matter how many light-emitting units on the array substrate are, namely how many asymmetric micro-disk cavities are arranged, the process steps of designing patterns, manufacturing masks, photoetching, etching and the like are adopted for completing at one time, and the light-emitting directions of the light-emitting units on one array substrate are consistent. Compared with the existing linear array stack array, if the number of the light-emitting units is not changed, the number of the substrates is halved, and the consistency of the light-emitting directions among the array substrates is easy to adjust in the process of manufacturing the stack array. Therefore, the process difficulty of the device is integrally reduced. Since several asymmetric micro-disk cavities are arranged in a more compact manner on the array substrate, the number of light emitting units is twice that of the line array substrate, and the width of the array substrate is not increased but decreased. In the specific implementation mode of the invention, 38 asymmetric microdisk cavities are distributed on an array substrate in two rows, the microdisk cavities are oval, the transverse dimension is 144 micrometers, the spacing is 200 micrometers, and the width of an array lamination is only 6.3 mm; if the cavity of the micro-disk is in a spiral shape, the maximum transverse dimension is 300 μm, the spacing is still 200 μm, and the width of the array stack is only 9.3 mm. The thickness of the array substrate is the same as that of the prior art, and is 155 μm, the thickness of the microchannel heat sink plate is 1.5mm, the height of the stacked array is only 6.775mm, and the total height of the stacked array is about 6.8mm by adding the thickness of the solder layers between the layers, which is almost neglected. Compared with the existing large scale of the linear array laminated array with the width of 10.9mm and the height of 16mm, the invention can avoid bringing new problems to a certain extent in the links of subsequent beam shaping, multi-beam bundling, output coupling and the like. Finally, although the invention has a plurality of asymmetric micro-disk cavities densely arranged on the array substrate used for stacking the array in a two-dimensional way, the heat dissipation problem seems to be very outstanding, the micro-channel heat dissipation plate added between the array substrates is made of materials with excellent heat conduction performance, such as oxygen-free copper, and cooling liquid micro-channels are distributed in the micro-channel heat dissipation plate in a snake shape, so that the semiconductor laser array stack can be ensured to normally work at the allowable temperature.

Drawings

Fig. 1 is a schematic front view of a stacked array structure of an asymmetric microdisk cavity edge-emitting semiconductor laser device of the present invention, which is also taken as an abstract figure. FIG. 2 is a schematic top view of a right staggered array substrate structure with oval microdisk cavities according to the present invention. FIG. 3 is a schematic top view of a right-staggered array substrate structure with spiral microdisk cavities according to the present invention. FIG. 4 is a schematic top view of a right-staggered array substrate structure having spiral-shaped microdisk cavities with concave cylindrical mirrors according to the present invention. FIG. 5 is a schematic top view of a left staggered array substrate structure having a spiral shaped micro-disk cavity with concave cylindrical mirrors according to the present invention.

Detailed Description

In the array stacked array of the asymmetric microdisk cavity edge emitting semiconductor laser of the present invention, as shown in fig. 1, a plurality of array substrates 2 and microchannel heat dissipation plates 3 are stacked alternately from bottom to top from a heat sink 1, and the array substrate 2 is at the top.

A cooling liquid micro-channel is distributed inside the micro-channel cooling plate 3; the material of the micro-channel heat dissipation plate 3 is oxygen-free copper, the cooling liquid micro-channels are distributed inside the micro-channel heat dissipation plate 3 in a snake shape, the aperture of the cooling liquid micro-channels is 0.2mm, and deionized water is used as cooling liquid.

The number of the array substrates 2 is 3-5; such as 5. Adjacent array substrates 2 are separated by microchannel heat sink plates 3.

The array substrate 2 is composed of a substrate 4 and a plurality of asymmetric microdisk cavities 5 which are manufactured on the substrate 4 by etching and are arranged in an array mode, as shown in fig. 2-5, the array mode means that the plurality of asymmetric microdisk cavities 5 are respectively arranged in a line to form a front row laser line array and a rear row laser line array according to the same geometric center distance, the light emitting directions of the asymmetric microdisk cavities 5 are the same and face the front, and the distance between the emergent light optical axis of the asymmetric microdisk cavity 5 in the rear row laser line array and the geometric center of the closest asymmetric microdisk cavity 5 in the front row laser line array is half the geometric center distance.

The asymmetric microdisk cavity 5 is an elliptical microdisk cavity or a spiral microdisk cavity, as shown in fig. 2 or fig. 3-5. The number of the asymmetric microdisk cavities 5 in the front row laser line array and the back row laser line array in the array substrate 2 is the same, and is 4-19, such as 19. The line array of the rear row of lasers is staggered by the half geometric center distance to the right or left relative to the line array of the front row of lasers, as shown in fig. 2-4 or fig. 5, the array substrate 2 is divided into two types of array substrates staggered to the right and array substrates staggered to the left, and the array substrates staggered to the right and array substrates staggered to the left are alternately stacked to form the array stacked array of the asymmetric micro-disk cavity edge emitting semiconductor laser, so that the quality of the emitted light beam is improved, and the far field distribution of the light beam intensity is uniform.

The light-emitting point of the asymmetric microdisk cavity 5 in the rear row laser line array is positioned at the vertex angle A of an isosceles triangle delta ABC, and the geometric centers of two asymmetric microdisk cavities 5 in the front row laser line array which are closest to the asymmetric microdisk cavity 5 in the rear row laser line array are respectively positioned at the base angles B and C of the isosceles triangle delta ABC as shown in fig. 2-5; the angle A is 60-120 degrees; when the asymmetric micro-disk cavity is an elliptical micro-disk cavity, the waist length AB of the isosceles triangle delta ABC is 350-500 mu m, and when the asymmetric micro-disk cavity is a spiral micro-disk cavity, the waist length AB of the isosceles triangle delta ABC is 500-650 mu m. The mutual position relation of the asymmetric microdisk cavities 5 in the array substrate 2 is determined, so that the obvious thermal superposition phenomenon between emergent light of the asymmetric microdisk cavities 5 in the rear row of laser line arrays and the asymmetric microdisk cavities 5 in the front row of laser line arrays can be avoided, and the array substrate 2 is ensured to stably emit light and the service life of the array substrate 2 is prolonged. The working temperature of the asymmetric microdisk cavity 5 is kept within a normal range, and the luminous efficiency of the asymmetric microdisk cavity can be ensured. The distance from the light emitting point of the asymmetric micro-disk cavity 5 in the rear row laser line array to the geometric center of the asymmetric micro-disk cavity 5 in the front row laser line array closest to the light emitting point, namely the waist length AB and AC of the isosceles triangle delta ABC are limited within 500 mu m or 650 mu m, so that the light emitting point density of the array substrate 2 can be ensured, the device structure is compact, and the optical power density of the laser is improved.

When the asymmetric microdisk cavity 5 is a spiral microdisk cavity, a concave cylindrical reflector 6 is arranged behind each spiral microdisk cavity, as shown in fig. 4 and 5, the concave cylindrical reflector 6 and the spiral microdisk cavity are simultaneously manufactured on the substrate 4, the heights of the concave cylindrical reflector 6 and the spiral microdisk cavity are the same, and the upper surface of the concave cylindrical reflector 6 is insulated, does not inject electrons and does not generate heat. The structural characteristic can bring two technical effects, firstly, the optical energy (non-main lobe emergent) escaping from the spiral-shaped micro-disk cavity in the opposite direction can be reflected and then emergent from the front of the array substrate 2, and the light-emitting efficiency of the spiral-shaped micro-disk cavity can be improved by 3%; and secondly, the support function can be realized, the array substrate 2 and the micro-channel heat dissipation plate 3 on the array substrate 2 are supported by the auxiliary spiral micro-disk cavity, the stress on the spiral micro-disk cavity in the array substrate 2 is reduced, and the cavity damage possibly caused by the stress is avoided.

Claims

1. An array stacking array of an asymmetric microdisk cavity edge-emitting semiconductor laser is characterized in that a plurality of array substrates (2) and microchannel heat dissipation plates (3) are stacked alternately from bottom to top from a heat sink (1), and the array substrate (2) is arranged at the top; a cooling liquid micro-channel is distributed inside the micro-channel heat dissipation plate (3); the number of the array substrates (2) is 3-5; the array substrate (2) is composed of a substrate (4) and a plurality of asymmetric microdisk cavities (5) which are manufactured on the substrate (4) through etching and arranged in an array mode, the array mode means that the plurality of asymmetric microdisk cavities (5) are respectively arranged in a straight line to form a front row laser line array and a rear row laser line array according to the same geometric center distance, the light-emitting directions of the asymmetric microdisk cavities (5) are the same and face the front, and the distance between the emergent light axis of the asymmetric microdisk cavity (5) in the rear row laser line array and the geometric center of the closest asymmetric microdisk cavity (5) in the front row laser line array is half of the geometric center distance.

2. The stacked array of asymmetric microdisk cavity edge-emitting semiconductor laser arrays of claim 1, wherein the asymmetric microdisk cavity (5) is an elliptical microdisk cavity or a spiral microdisk cavity.

3. The stacked array of asymmetric microdisk cavity edge emitting semiconductor laser arrays of claim 1, wherein the number of asymmetric microdisk cavities (5) in the front row of laser lines and the rear row of laser lines in the array substrate (2) is the same, and is 4-19.

4. The asymmetric microdisk cavity edge-emitting semiconductor laser array stack array of claim 1, wherein the back row of laser lines is staggered by said one-half geometric center distance to the right or left with respect to the front row of laser lines, and the array substrate (2) is thus divided into two types, staggered array substrate to the right and staggered array substrate to the left; and the array substrates staggered rightwards and staggered leftwards are stacked in a conversion way to form the array stacked array of the asymmetric microdisk cavity edge emitting semiconductor laser.

5. The array stack array of asymmetric micro-disk cavity edge emitting semiconductor lasers as claimed in claim 1, characterized in that when the asymmetric micro-disk cavity (5) is a spiral micro-disk cavity, a concave cylindrical reflector (6) is arranged behind each spiral micro-disk cavity, the concave cylindrical reflector (6) and the spiral micro-disk cavity are simultaneously fabricated on the substrate (4), the concave cylindrical reflector (6) and the spiral micro-disk cavity have the same height, and the upper surface of the concave cylindrical reflector (6) is insulated.