CN103986059A - Laser device - Google Patents
Laser device Download PDFInfo
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- CN103986059A CN103986059A CN201410172364.8A CN201410172364A CN103986059A CN 103986059 A CN103986059 A CN 103986059A CN 201410172364 A CN201410172364 A CN 201410172364A CN 103986059 A CN103986059 A CN 103986059A
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- heat sink
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Abstract
The invention relates to the field of laser illumination, in particular to a laser device. The laser device comprises a plurality of heat sinks extending in the axial direction of a central column around the central column, a plurality of array chips integrated with light-emitting components are distributed on each heat sink in the axial direction of the central column, and the corresponding array chips on the adjacent heat sinks are staggered in the axial direction of the central column. The laser device is arranged according to the optimized structure, the performance on various aspects is weighed, the light emitting power and light emitting quality of the manufactured laser device are greatly optimized, and meanwhile the longitudinal length of the device is within the range capable of being processed maturely by the technology.
Description
Technical field
The present invention relates to field of laser illumination, relate in particular to a kind of Laser Devices.
Background technology
As advanced manufacturing technology, laser processing has been widely used in the industries such as automobile, electronics, electrical equipment, aviation, metallurgy, machine-building, to improving the quality of products, labor productivity, automaticity, environmental friendliness degree, reduce material consumption etc. and play important effect.In the application such as cutting, welding, surface treatment, more and more higher to the demanded power output of laser.In addition, to require the Laser output form of most of laser process equipments be optical fiber output to the particularity of laser processing.Therefore for high-power side-pump laser module, not only requiring has enough laser output powers (more than kilowatt), and need to possess the beam quality of higher Output of laser.
The problem that conventional profile pump laser module exists is:
In the time of more than profile pump laser module power output reaches kilowatt, if while using the laser diode array chip of the specified output of small-power, required laser diode array chip arrange need to be longer laser crystal bar.And due to the limits of fabrication techniques of laser crystal bar, the length of laser crystal bar is just difficult to increase after reaching certain limit again.
If use the laser diode array chip of the specified output of high power, can reduce the quantity that single profile pump laser module is used laser diode array chip.Yet, when using high specified power laser diode array chip, the transmitting power density of laser diode array chip will significantly improve, the thermal lensing effect of the laser crystal bar in conventional profile pump laser module is obviously aggravated, the beam quality of profile pump laser module output obviously declines, thereby laser beam cannot be coupled in output optical fibre.
Summary of the invention
As mentioned above, in the prior art, there are the following problems: in the time of more than profile pump laser module power output reaches kilowatt, if while using the laser diode array chip of the specified output of small-power, required laser diode array chip arrange need to be longer laser crystal bar, and due to the limits of fabrication techniques of laser crystal bar, the length of laser crystal bar is just difficult to increase after reaching certain limit again; And when using high specified power laser diode array chip, the transmitting power density of laser diode array chip will significantly improve, the thermal lensing effect of the laser crystal bar in conventional profile pump laser module is obviously aggravated, and the light quality producing can decline.
For the problems referred to above, the present invention proposes a kind of Laser Devices.It is arranged with optimized structure, has weighed the performance of each side, and the luminous power of the Laser Devices of manufacturing, luminous mass are all optimized greatly, and the longitudinal length of while device is positioned at technology can the ripe scope of processing.
The present invention proposes a kind of Laser Devices, comprise around central cylinder along its axially extended many heat sink, axial arranging along described central cylinder on heat sink every described has a plurality of array chips that are integrated with light-emitting component, wherein, on the axial direction of described central cylinder, adjacent corresponding described array chip on heat sink staggers mutually.
So design, the position of the array chip on difference is heat sink is not identical straight line continuous arrangement, and array chip can be arranged on all sides of Laser Devices with more rational position and density.Luminous power on can either guarantor unit's area, can not cause significant thermal lensing effect again, can not make the axial dimension of central cylinder long yet.
Preferably, all array chips have identical size, and described heat sink on, adjacent described array chip spacing distance is each other half of the size of described array chip on the axial direction of described central cylinder.
Preferably, on the axial direction of described central cylinder, adjacent corresponding array chip on the heat sink specific range that mutually staggers, described distance be the size of described array chip on the axial direction of described central cylinder or its half.
So, according on the lateral circle surface of Laser Devices of the present invention, the array chip on oblique line has formed around the helix of central cylinder to be arranged.
Preferably, described heat sink quantity is nine.
Preferably, described nine heat sink in, the quantity of first, fourth, seven array chip on heat sink is ten.
Preferably, described nine heat sink in, second and third, the quantity of five, six, eight, nine array chips on heat sink is nine.
Because pumping laser along central rods axon to the irradiation spread pattern that is helix, for the cooling water along central rods body axial flow, radiating effect is better than the radiating effect of conventional profile pump laser module.
Preferably, on the axial direction of described central cylinder, first, four, the position of seven first array chips on heat sink flushes, second, five, the position and first of eight first array chips on heat sink, four, the distance staggering in the position of seven first array chips on heat sink is half of the size of described array chip on the axial direction of described central cylinder, the 3rd, six, the position and first of nine first array chips on heat sink, four, the distance staggering in the position of seven first array chips on heat sink is the whole size of described array chip on the axial direction of described central cylinder, the 3rd, six, the position and second of nine first array chips on heat sink, five, the distance staggering in the position of eight first array chips on heat sink is half of the size of described array chip on the axial direction of described central cylinder.
The central rods surface that is arranged in has like this formed the equally distributed pumping laser irradiation of spiral way layout and interval along its axial direction.On the axial direction of central cylinder, the pumping laser length of being irradiated is the length of 14.5 array chips, and the length of the central cylinder that the modular design of this illumination length is required, in 200mm, is positioned at the scope of ripe manufacturing capacity.
Preferably, described light-emitting component is laser diode.
Preferably, described central cylinder is the laser crystal bar that outer cover has quartz glass tube.According to technical scheme of the present invention, the length of required laser crystal bar, in 200mm, is positioned at the manufacturing capacity scope of crystal bar.
Preferably, between described central cylinder and described quartz glass tube, there is the ring-type pipeline for cooling water, and there is the pipeline for cooling water described on heat sink.So cooling water can cool away rapidly the heat that array chip and laser crystal bar distribute, and guarantees luminous mass.
According to Laser Devices of the present invention, equivalent array chip quantity in the region of unit chip length is 6, therefore can calculate the specified pumping light power irradiating on the central cylinder of unit chip length is 40Wx6=240W, the specified pumping light power that is compared to 280W on conventional Laser Devices, the power density on crystal bar has reduced more than 14%.This has effectively alleviated thermal lensing effect, has promoted luminous mass.
Above-mentioned technical characterictic can various applicable modes combine or be substituted by equivalent technical characterictic, as long as can reach object of the present invention.
Accompanying drawing explanation
To the present invention, be described in more detail based on embodiment and with reference to accompanying drawing hereinafter.Wherein:
Fig. 1 has shown according to Laser Devices of the present invention cutaway view vertically;
Fig. 2 has shown that Laser Devices according to the present invention are along the cutaway view of the AA line in Fig. 1;
Fig. 3 has shown the expansion schematic diagram according to the lateral circle surface of Laser Devices of the present invention;
Fig. 4 has shown that the Laser Devices in comparative example are along horizontal cutaway view;
Fig. 5 has shown the expansion schematic diagram of the lateral circle surface of the Laser Devices in comparative example;
Fig. 6 has shown the effect schematic diagram of the Laser Devices in comparative example 1;
Fig. 7 has shown the effect schematic diagram of the Laser Devices in comparative example 2;
Fig. 8 has shown the effect schematic diagram according to the Laser Devices in embodiments of the invention.
In the accompanying drawings, identical parts are used identical Reference numeral.Accompanying drawing is not according to actual ratio.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
The present invention proposes a kind of Laser Devices.
With reference to Fig. 1, Laser Devices according to the present invention comprise and are positioned at central laser crystal bar 3 and are centered around the quartz glass tube 4 outside laser crystal bar 3.
According to Laser Devices of the present invention, also comprise around laser crystal bar 3 and quartz glass tube 4 and axially the direction of AA direction in Fig. 1 (perpendicular to) many of extending are heat sink along it.
Fig. 2 has shown the cutaway view of the Laser Devices in Fig. 1 along AA direction.From Fig. 2, can be clear that, these Laser Devices have nine heat sink, be denoted as respectively 11,12,13,14,15,16,17,18,19.
Referring again to Fig. 1.On every heat sink 11-19, be placed with a plurality of array chips 2 that are integrated with laser diode, all array chips 2 all have identical size, and on the axial direction perpendicular to AA direction, and adjacent corresponding array chip 2 on heat sink staggers mutually.
With reference to Fig. 2, between laser crystal bar 3 and quartz glass tube 4, there is cooling water pipeline 9.And being formed with equally cooling water pipeline on heat sink, the cooling water pipeline in heat sink in Fig. 2 respectively correspondence is denoted as 81,82,83,84,85,86,87,88 and 89.
Referring again to Fig. 1, cooling water 7 flows to water outlet water cavity 6 by cooling water pipeline from entering water water cavity 5, the heat being distributed to take away laser diode array chip 2 and laser crystal bar 3.
Fig. 3 has shown the expansion schematic diagram according to the lateral circle surface of Laser Devices of the present invention.
With reference to Fig. 3, on the axial direction of laser crystal bar 3 (be left and right to) in Fig. 3, adjacent array chip 2 spacing distance is each other preferably half of size of array chip 2.Adjacent heat sink corresponding array chip 2 specific range that mutually staggers, this distance can for the size of array chip 2 on the axial direction of laser crystal bar 3 or its half.
About the quantity of heat sink upper array chip 2 and arrange, specifically can be in the following way: nine heat sink in, the quantity of the array chip 2 on heat sink 11, heat sink 14 and heat sink 17 is ten; The quantity of the array chip 2 on heat sink 12, heat sink 13, heat sink 15, heat sink 16, heat sink 18 and heat sink 19 is nine.Meaning property shows as shown in Figure 3.
On the axial direction of laser crystal bar 3 (be left and right to) in Fig. 3,2 alignment of array chip on heat sink 11, heat sink 14 and heat sink 17 are arranged, and the distance staggering in the position of the first array chip 2 on the position and heat sink 11, heat sink 14 and heat sink 17 of the first array chip 2 on heat sink 12, heat sink 15 and heat sink 18 is half of the size of array chip 2 on the axial direction of laser crystal bar 3.The distance staggering in the position of the first array chip 2 on the position of the first array chip 2 on heat sink 13, heat sink 16 and heat sink 19 and heat sink 11, heat sink 14 and heat sink 17 is the size of array chip 2 on the axial direction of laser crystal bar 3.
Below in conjunction with comparative example, illustrate according to the obvious favourable effect of Laser Devices of the present invention.According to Laser Devices of the present invention, for example can use the pump laser diode array chip 2 of 84 40W rated power.
Fig. 8 has shown the effect schematic diagram according to the Laser Devices in embodiments of the invention.
According to property illustrated in Figure 8, show, by pump laser diode array chip 2 be arranged in 9 heat sink on.9 heat sink shows with label 11～19 respectively, wherein on heat sink 11, heat sink 14 and heat sink 17 with same arrangement mode 10 the pump laser diode array chips 2 of arranging respectively, between every two pumping laser array chips 2, reserve the space of 1/2nd chip length a (be chip on the axial direction of laser crystal bar 3, be the size on the left and right directions of Fig. 8).And 9 the laser diode array chips 2 of arranging respectively on heat sink 12, heat sink 15, heat sink 18, heat sink 13, heat sink 16 and heat sink 19 are also the space that reserves 1/2nd chip length a (be chip on the axial direction of laser crystal bar 3, be the size on the left and right directions of Fig. 8) between every two chips 2.The arrangement position of heat sink 12, heat sink 15, heat sink 18 3 first pump laser diode array chips 2 on heat sink is compared to the position of 1/2nd chip length a of first chip position skew of heat sink 11, heat sink 14 and heat sink 17 three pump laser diode array chips 2 on heat sink.In figure, be schematically illustrated as skew to the right.And the position of a chip length a of first chip position skew of the pump laser diode array chip 2 of the first chip position of the pump laser diode array chip 2 of arranging on heat sink 13, heat sink 16 and heat sink 19 on heat sink compared to heat sink 11, heat sink 14 and heat sink 17 three.In Fig. 8, be schematically illustrated as equally skew to the right.
Three groups of boost line A1, A2 from Fig. 8 and A3, the pump laser diode array chip 2 in each group boost line has formed around the helix of laser crystal bar 3 to be arranged.Laser crystal bar 3 surfaces that are arranged in have like this formed the equally distributed pumping laser irradiation of spiral way layout and interval along crystal bar axial direction.The pumping laser length L 8 of suffered irradiation on laser crystal bar axial direction is the length of 14.5 pump laser diode array chips, the length of the laser crystal bar 3 that the modular design of this illumination length is required, in 200mm, is arranged in the ripe manufacturing capacity scope of crystal bar 3.
The quantity of the equivalent pump laser diode array chip 2 in the region of the two other boost line A4 in Fig. 8, the unit chip length a that A5 limits is 6, therefore can calculate the specified pumping light power irradiating on the laser crystal bar 3 in unit chip length a is 40Wx6=240W, the specified pumping light power that is compared to 280W in conventional pumping laser module, the power density on crystal bar has reduced more than 14%.This has effectively alleviated thermal lensing effect, has promoted luminous mass.In addition, because the spread pattern that pumping laser is helix along the axial irradiation of crystal bar is for the cooling water along crystal bar axial flow, better than the radiating effect of conventional profile pump laser module to the radiating effect of crystal bar.
Below can be with reference to comparative example.
Fig. 4 has shown that the Laser Devices in comparative example are along horizontal cutaway view.
Fig. 5 has shown the expansion schematic diagram of the lateral circle surface of the Laser Devices in comparative example.As seen from Figure 5, the arrangement mode of the array chip 2 on the difference of the Laser Devices in comparative example is heat sink is arranged for alignment, and on the axial direction of laser crystal bar 3, (be left and right to) in Fig. 4 do not have mutual dislocation.Meanwhile, the quantity of all array chips 2 on heat sink is all identical.
In this case, the arrangement of arbitrary heat sink packaged pump laser diode array chip 2 is all identical straight line continuous arrangement.Therefore, for the laser diode array chip 2 of pumping object, around the spread pattern of crystal bar 3 side surfaces, be multidimensional, straight line continuous arrangement, around crystal bar 3 axle center, be arranged as multidimensional, along crystal bar 3 axis directions, be arranged as straight line continuous arrangement.
Select single rated power be the laser diode array chip 2 of 40W as pumping source, laser diode array chip 2 quantity that need are 85 (40W*85=3400W).
Fig. 6 has shown the effect schematic diagram of the Laser Devices in comparative example 1.In comparative example 1, arrange 7 heat sink, the quantity of the pump laser diode array chip 2 of each heat sink upper installation is INT (85 ÷ 7)=12 (only considering integer), total number of chips is 84.From the heat sink planar development of Fig. 6, arranging of pump laser diode array chip 2 can be found out, on the laser crystal bar 3 on unit chip length a, received quota pumping light power is 40W*7=280W.And shown in Fig. 8 according in Laser Devices of the present invention, the specified pumping light power irradiating on the laser crystal bar 3 of unit chip length a is 40Wx6=240W, the power density on crystal bar has reduced more than 14%.
Fig. 7 has shown the effect schematic diagram of the Laser Devices in comparative example 2.In comparative example 2, arrange 9 heat sink, the quantity of the pump laser diode array chip 2 of each heat sink upper installation is INT (85 ÷ 9)=9 (only considering integer), total number of chips is 81.From the heat sink planar development of Fig. 7, arranging of pump laser diode array chip 2 can be found out, the specified pumping light power irradiating on the laser crystal bar on unit chip length a is 40Wx9=360W.
In comparative example 2, the irradiation pump power density of receiving on laser crystal bar 3 is much larger than the irradiation power density of receiving according to the laser crystal bar 3 of the Laser Devices in embodiments of the invention, so the thermal lensing effect of the laser crystal bar of the Laser Devices of comparative example 2 is much larger than according to the thermal lensing effect in the profile pump laser module of Laser Devices of the present invention.
Certainly, if only arrange 5 heat sink, compared to 7 heat sink comparative examples 1 are set, there is less thermal lensing effect, if but only arrange 5 heat sink, in Laser Devices, the quantity of each laser diode array chip 2 on heat sink has reached (85 ÷ 5)=17, the suffered pumping laser irradiation of laser crystal bar 3 width will, over 18.7 pump laser diode array chip length, at this moment far exceed the capabilities limits of current manufacture crystal bar length to the requirement of laser crystal bar 3 total lengths.According to laser crystal bar 3 total lengths of Laser Devices of the present invention, be positioned at acceptable scope.
Therefore, there are the spiral Laser Devices that are spaced the profile pump laser module of laser diode array chip 2 and there is less crystal bar thermal lensing effect.In the same module laser power situation of output, Laser Devices according to the present invention have better beam quality.There is good cooling performance simultaneously.
Although invention has been described with reference to preferred embodiment, without departing from the scope of the invention, can carry out various improvement and can replace parts wherein with equivalent it.Especially, only otherwise have structural hazard, every technical characterictic of mentioning in each embodiment all can combine in any way.The present invention is not limited to disclosed specific embodiment in literary composition, but comprises all technical schemes in the scope that falls into claim.
Claims (10)
1. Laser Devices, comprise around central cylinder along its axially extended many heat sink, axial arranging along described central cylinder on heat sink every described has a plurality of array chips that are integrated with light-emitting component, it is characterized in that, on the axial direction of described central cylinder, adjacent corresponding described array chip on heat sink staggers mutually.
2. Laser Devices according to claim 1, it is characterized in that, all array chips have identical size, and described heat sink on, adjacent described array chip spacing distance is each other half of the size of described array chip on the axial direction of described central cylinder.
3. Laser Devices according to claim 2, it is characterized in that, on the axial direction of described central cylinder, adjacent corresponding array chip on the heat sink specific range that mutually staggers, described distance be the size of described array chip on the axial direction of described central cylinder or its half.
4. Laser Devices according to claim 3, is characterized in that, described heat sink quantity is nine.
5. Laser Devices according to claim 4, is characterized in that, described nine heat sink in, the quantity of first, fourth, seven array chip on heat sink is ten.
6. Laser Devices according to claim 5, is characterized in that, described nine heat sink in, second and third, the quantity of five, six, eight, nine array chips on heat sink is nine.
7. Laser Devices according to claim 6, it is characterized in that, on the axial direction of described central cylinder, first, four, the position of seven first array chips on heat sink flushes, second, five, the position and first of eight first array chips on heat sink, four, the distance staggering in the position of seven first array chips on heat sink is half of the size of described array chip on the axial direction of described central cylinder, the 3rd, six, the position and first of nine first array chips on heat sink, four, the distance staggering in the position of seven first array chips on heat sink is the whole size of described array chip on the axial direction of described central cylinder, the 3rd, six, the position and second of nine first array chips on heat sink, five, the distance staggering in the position of eight first array chips on heat sink is half of the size of described array chip on the axial direction of described central cylinder.
8. according to the Laser Devices described in any one in claim 1 to 7, it is characterized in that, described light-emitting component is laser diode.
9. according to the Laser Devices described in any one in claim 1 to 7, it is characterized in that, described central cylinder is the laser crystal bar that outer cover has quartz glass tube.
10. Laser Devices according to claim 9, is characterized in that, have the ring-type pipeline for cooling water between described central cylinder and described quartz glass tube, and have the pipeline for cooling water described on heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410172364.8A CN103986059A (en) | 2014-04-25 | 2014-04-25 | Laser device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410172364.8A CN103986059A (en) | 2014-04-25 | 2014-04-25 | Laser device |
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| CN103986059A true CN103986059A (en) | 2014-08-13 |
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| CN201410172364.8A Pending CN103986059A (en) | 2014-04-25 | 2014-04-25 | Laser device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378693A (en) * | 2018-12-11 | 2019-02-22 | 中国工程物理研究院激光聚变研究中心 | Laser gain structure and laser |
| CN109921284A (en) * | 2019-04-22 | 2019-06-21 | 长春理工大学 | Asymmetric micro- disk chamber edge-emission semiconductor laser array |
| CN109921283A (en) * | 2019-02-01 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor devices and preparation method |
| CN110011179A (en) * | 2019-04-22 | 2019-07-12 | 长春理工大学 | Asymmetric micro- disk chamber edge-emission semiconductor laser array folds battle array |
| CN114784600A (en) * | 2022-03-04 | 2022-07-22 | 中国电子科技集团公司第十一研究所 | Solid laser of space ladder uniform pumping |
-
2014
- 2014-04-25 CN CN201410172364.8A patent/CN103986059A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378693A (en) * | 2018-12-11 | 2019-02-22 | 中国工程物理研究院激光聚变研究中心 | Laser gain structure and laser |
| CN109378693B (en) * | 2018-12-11 | 2024-02-20 | 中国工程物理研究院激光聚变研究中心 | Laser gain structure and laser |
| CN109921283A (en) * | 2019-02-01 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor devices and preparation method |
| CN109921283B (en) * | 2019-02-01 | 2020-11-10 | 苏州长光华芯光电技术有限公司 | Semiconductor device and preparation method |
| CN109921284A (en) * | 2019-04-22 | 2019-06-21 | 长春理工大学 | Asymmetric micro- disk chamber edge-emission semiconductor laser array |
| CN110011179A (en) * | 2019-04-22 | 2019-07-12 | 长春理工大学 | Asymmetric micro- disk chamber edge-emission semiconductor laser array folds battle array |
| CN109921284B (en) * | 2019-04-22 | 2020-06-05 | 长春理工大学 | Asymmetric microdisk cavity edge emitting semiconductor laser array |
| CN114784600A (en) * | 2022-03-04 | 2022-07-22 | 中国电子科技集团公司第十一研究所 | Solid laser of space ladder uniform pumping |
| CN114784600B (en) * | 2022-03-04 | 2024-03-19 | 中国电子科技集团公司第十一研究所 | Solid laser with space ladder uniform pumping |
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