CN114825034B - Single photon source with asymmetric micro-disc cavity optical pump - Google Patents
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Abstract
A single photon source with asymmetric micro-disk cavity optical pumping belongs to the technical field of semiconductor photoelectrons. The prior art is difficult to realize miniaturization and integration, and has low pumping efficiency and single photon generation efficiency. In the invention, the optical pump is a micro-disc cavity, the micro-disc cavity and the micro-column cavity are separated on the same lower electrode, substrate and buffer layer, and the micro-disc cavity and the micro-column cavity have the same epitaxial structure; the same epitaxial structure is that a lower distributed Bragg reflector, a lower waveguide layer, a quantum dot active gain layer, an upper waveguide layer, an oxide limiting layer, an upper distributed Bragg reflector, a covering layer and an electrode metal layer are sequentially arranged from bottom to top; the micro-disc cavity is an asymmetric micro-disc cavity, and the light emitting direction faces the micro-column cavity; the side surface of the micro-column cavity facing the micro-disc cavity is provided with a groove, the center part of the electrode metal layer of the micro-column cavity is provided with a light outlet with the radius of 0.5-5.0 mu m, and the radius of the micro-column cavity is 8-20 mu m; in the vertical direction, the geometric axis of the optical pump is parallel to the geometric axis of the micro-column cavity and is 200-500 μm away.
Description
Technical Field
The invention relates to a single photon source with an asymmetric micro-disk cavity optical pump, belonging to the technical field of semiconductor photoelectrons.
Background
The existing light sources are divided into four types according to the distribution of photons on time sequence, namely a thermal radiation light source, a laser light source, a non-classical light source and a single photon source. By single photon source is meant a quantum light source that can emit single photons in sequence with certainty, depending on any time required for use. Because photons have the characteristics of weak coupling with environment, small decoherence, easiness in coding and control of single bit and the like, the single photon source has important application in the fields of quantum communication, quantum precision measurement, quantum key distribution, quantum sensing and the like. An ideal single photon source needs to be deterministic, isotactic and efficient. The certainty of a single photon source refers to the probability of 1 that the device has and only one single photon emits, depending on any time required for use. Isotacticity of a single photon source refers to the exact identity of the quantum states of the radiated single photons, including polarization, spatiotemporal mode, spectral mode, and the like. The efficiency of a single photon source includes two parts, namely, high generation efficiency, which refers to the ratio of the number of generated single photons to the number of excitation pulses, and high collection efficiency, which refers to the efficiency with which generated photons are collected by an optical system.
Many physical systems are available that can be single photon sources, such as single atoms, single molecules, diamond color centers, defect states of two-dimensional materials, and semiconductor quantum dots. These different physical systems vary greatly in device fabrication, experimental complexity, single photon frequency, single photon lifetime, stability, etc. The semiconductor quantum dots are semiconductor materials grown by a molecular beam epitaxy technology and can form a two-level structure similar to natural atoms. The semiconductor quantum dot not only has an obvious discrete energy level structure like atoms, but also has many advantages of semiconductor materials, such as controllable growth conditions and dimensions, and the like, can be coupled and integrated with various cavities on a chip, and single photons emitted by the quantum dot are easy to be freely controlled. Meanwhile, the light emission wavelength of the quantum dot can be controlled by adjusting the epitaxial growth parameters, and it is seen that the semiconductor quantum dot is naturally suitable for use as a single photon source. Among the various physical systems available, semiconductor quantum dots offer the highest quality single photon sources to date.
The existing single photon source device is formed by coupling a semiconductor quantum dot and a micro-column cavity to form a quantum dot-micro-column cavity coupling system, and single photon output is generated under the excitation of an optical pump. The structure of the single photon source device is shown in figure 1, the quantum dot-micro column cavity coupling system is made of P-type Al from top to bottom 0.1 Ga 0.9 As/Al 0.8 Ga 0.2 An As upper distributed Bragg reflector 3, an InAs/GaAs quantum dot active gain layer 6 and an N-type Al 0.1 Ga 0.9 As/Al 0.8 Ga 0.2 The lower distribution Bragg reflector 8 of As, the buffer layer 9 of N-type GaAs and the substrate 10 of N-type GaAs; the micro-column cavity formed by the upper distributed Bragg reflector 3, the quantum dot active gain layer 6 and the lower distributed Bragg reflector 8 has very small radius and is in the range of 0.5-5.0 mu mIn the micro-column cavity, single photon emission is facilitated, the optical pump 14 is separated from the quantum dot-micro-column cavity coupling system, optical energy is provided for the micro-column cavity from the side face, photons in the micro-column cavity are directly emitted to a cavity mode, and light is emitted from the top face of the micro-column cavity. The radius of the micro-column cavity is designed appropriately, so that the quality factor of the micro-column cavity and the value of the cavity mode volume can be maximized, the purcell factor reaches the maximum value, and finally the spontaneous radiation rate of the quantum dot is greatly improved.
However, the conventional single photon source device has the following disadvantages.
In the optical pumping 14, besides the light source, a complex filtering system and a collimation coupling system are required to be configured to realize single photon resonance excitation, so that the defects are that the single photon source device has a complex and loose structure, miniaturization and integration are not easy to realize, and alignment of pumping light and the quantum dot active gain layer 6 is not easy to realize, so that pumping efficiency is reduced.
Due to geometrical characteristics of the micro-column cavity such as cylindrical shape and very small radial dimension, the reflection loss of the cavity facing the pump light is larger, and the pump efficiency and the photon generation efficiency are lower; in addition, ring resonance in the cavity is easy to occur, and the generation efficiency of single photons is reduced.
There are various differences between the optical pump 14 and the micro-column cavity, and it is difficult to obtain high single photon output stability and full identity.
Disclosure of Invention
In order to overcome the defects of the existing single photon source device, the invention provides a scheme of a single photon source with asymmetric micro-disk cavity optical pumping.
The single photon source with the asymmetric micro-disc cavity optical pump comprises an optical pump and a micro-column cavity, and is characterized in that as shown in fig. 2-4, the optical pump is a micro-disc cavity, the micro-disc cavity and the micro-column cavity are separated on the same lower electrode 11, a substrate 10 and a buffer layer 9, and the micro-disc cavity and the micro-column cavity have the same epitaxial structure; the same epitaxial structure is that a lower distributed Bragg reflector 8, a lower waveguide layer 7, a quantum dot active gain layer 6, an upper waveguide layer 5, an oxide limiting layer 4, an upper distributed Bragg reflector 3, a covering layer 2 and an electrode metal layer 1 are sequentially arranged from bottom to top; the micro-disc cavity is an asymmetric micro-disc cavity, and the light emitting direction faces the micro-column cavity; the part of the side surface of the micro-column cavity facing the micro-disc cavity is provided with a groove 12, the central part of the electrode metal layer 1 of the micro-column cavity is provided with a light outlet 13 with the radius of 0.5-5.0 mu m, and the radius of the micro-column cavity is 8-20 mu m; in the vertical direction, the geometric axis of the optical pump is parallel to the geometric axis of the micro-column cavity and is 200-500 μm away.
The light-emitting process of the single photon source with the asymmetric micro-disk cavity optical pump is as follows. A driving voltage is applied between the lower electrode 11 and the electrode metal layer 1 of the micro-disk cavity, current is injected from the electrode metal layer 1 and passes through the quantum dot active gain layer 6 of the micro-disk cavity, so that quantum dots in the quantum dot active gain layer 6 are stimulated to excite photons, and the photons flow out from the lower electrode 11 to form a closed loop. The excitation photons are circularly resonant on the horizontal layer in the micro-disc cavity, form stable standing waves and then radiate outside the cavity in a directional manner, as shown in figure 2, and become pump light of the micro-column cavity. Under the action of pumping light, quantum dots in the quantum dot active gain layer 6 of the micro-column cavity are stimulated to excite photons, the excited photons form column resonance in the vertical direction under the combined action of the upper distributed Bragg reflector 3 and the lower distributed Bragg reflector 8, and finally the excited photons are emitted through the light outlet 13 positioned at the central part of the electrode metal layer 1 of the micro-column cavity, so that single photon output is realized.
The technical effects of the present invention are as follows.
The micro-disc cavity optical pump and the micro-column cavity single photon source are separated on the same lower electrode 11, the substrate 10 and the buffer layer 9 and have the same epitaxial structure, which means that the two can be synchronously manufactured on the same substrate by the same epitaxial process, become two inherent components of one light-emitting chip, and realize miniaturization and integration of the device; the micro-disk cavity is an asymmetric micro-disk cavity, the light emitting direction is unique and faces the micro-column cavity, the light emitting mode of the micro-disk cavity is edge emission, meanwhile, the gain layer of the micro-disk cavity is equal to the gain layer of the micro-column cavity in height, and the emission and the receiving of pump light are naturally aligned; the radial dimension of the micro-column cavity is increased, and the part of the side surface of the micro-column cavity facing the micro-disk cavity is provided with a groove 12, so that the receiving of pump light is facilitated, the pump efficiency is greatly improved, the pump efficiency is theoretically improved by about 50%, and meanwhile, under the constraint of a light outlet 13 with the dimension of 0.5-5.0 mu m, the micro-column cavity with the increased radial dimension can still emit light in a single photon mode; the large distance of 200-500 μm between the optical pump and the micro-column cavity ensures the heat dissipation of the device during the period, and meanwhile, most of the pump light with a certain divergence angle can still enter the groove 12 on the side surface of the micro-column cavity, so that the pump efficiency is not reduced, and the whole light emission of the device is stable.
Compared with the existing microcolumn cavity with a complete cylindrical shape, the microcolumn cavity with the grooves 12 on the side surface is not easy to generate annular resonance in the cavity, and the single photon generation efficiency is stable.
The micro-disk cavity and the micro-column cavity are provided with the same quantum dot active gain layer 6, so that the energy of pump light and the energy level resonance condition of the micro-column cavity quantum dot are easily met, resonance excitation is formed, time jitter and dephasing effects caused by other excitation modes are reduced, the environmental stability of an excitation process is ensured, and the stability and the full identity of single photon output can be improved.
The oxide confinement layer 4, the upper waveguide layer 5 and the lower waveguide layer 7 become co-liners in the micro-column cavity, and the upper distributed Bragg reflector 3 and the lower distributed Bragg reflector 8 become co-liners in the micro-disk cavity, but the process links are not added, and the cost is increased slightly. Moreover, the existence of the upper waveguide layer 5 and the lower waveguide layer 7 in the micro-column cavity and the existence of the upper distributed Bragg reflector 3 and the lower distributed Bragg reflector 8 in the micro-disk cavity ensure the equal heights of the two active gain layers; the oxide confinement layer 4 can also function to focus the single photon beam.
In the prior art, the micro-column cavity is free of the electrode metal layer 1 and the cover layer 2, however, the micro-column cavity is a necessary technology for the invention. Because the cover layer 2 is arranged for manufacturing the electrode metal layer 1, the existence of the electrode metal layer 1 corresponds to the larger radial dimension of the micro-column cavity, and then is matched with the light outlet 13 with the dimension of a few micrometers, so that the single photon light outlet on the top surface is realized.
Drawings
Fig. 1 is a schematic diagram showing a front view in cross section of a conventional single photon source device in its structure and operating state.
FIG. 2 is a schematic cross-sectional front view of a single photon source structure and operating state of the optical pump with asymmetric microdisk cavities of the present invention.
FIG. 3 is a schematic perspective view of a single photon source structure of the optical pump with asymmetric micro-disk cavity according to the present invention, which is also used as a summary drawing.
Fig. 4-8 are schematic top views of the single photon source structure of the self-contained asymmetric micro-disk cavity optical pump of the present invention.
Wherein:
the micro-disk cavity in fig. 2-4 is a spiral asymmetric micro-disk cavity, and the micro-column cavity groove is a single concave cylindrical surface groove.
The micro-disc cavity in fig. 5 is a spiral asymmetric micro-disc cavity, and the micro-column cavity groove is a single concave cylindrical surface groove.
The micro-disk cavity in fig. 6 is an elliptical asymmetric micro-disk cavity, and the micro-column cavity groove is a single concave cylindrical surface groove.
The micro-disk cavity in fig. 7 is a spiral asymmetric micro-disk cavity, and the micro-column cavity groove is a single concave trapezoid column-shaped groove.
The micro-disk cavity in fig. 8 is a spiral asymmetric micro-disk cavity, and the micro-column cavity groove is a three-concave cylindrical surface groove.
Detailed Description
The asymmetric micro-disk cavity is one of a spiral asymmetric micro-disk cavity, a spiral asymmetric micro-disk cavity and an elliptic asymmetric micro-disk cavity, and as shown in fig. 4, 5 and 6, the light emitting direction faces the micro-column cavity groove 12.
The spiral polar coordinate equation of the spiral asymmetric micro-disk cavity is ρ (θ) =ρ 0 (1+epsilon cos theta), the spiral polar coordinate equation of the spiral asymmetric micro-disc cavity is
A spiral microdisk cavity of (a), wherein: ρ (θ) is the polar diameter, θ is the polar angle, ε is the deformation factor, ε=0.1 to 2, ρ 0 Is a characteristic radius, that is, a polar radius when the polar angle θ of the spiral is=pi/2, the polar angle θ of the spiral is=0°, and ρ 0 ＝90μm～180 μm. E.g. the spiral asymmetric micro-disk cavity takes epsilon=0.42 and ρ 0 Spiral asymmetric microdisk cavity =150 μm, ε=0.1, ρ 0 ＝180μm。
The part of the side surface of the micro-column cavity facing the micro-disc cavity is provided with a groove 12 which is one of a single concave cylindrical surface groove, a single concave trapezoid cylindrical surface groove and a three concave cylindrical surface groove, and the grooves are sequentially shown in fig. 4, 7 and 8.
When the groove 12 is a single concave cylindrical groove, the cylindrical chord length is 6 μm to 18 μm, and the cylindrical radius is 8 μm to 20 μm. When the groove 12 is a single concave trapezoid column-shaped groove, the trapezoid bottom is 6-18 μm long, the height is 4-8 μm, and the upper bottom is 4-12 μm long. When the groove 12 is a three-concave cylindrical groove, the sum of the chord lengths of the three cylindrical surfaces is 6-18 μm, and the radius of the cylindrical surface is 1-3 μm.
The center part of the electrode metal layer 1 of the micro-column cavity is provided with a light outlet 13 with the radius of 0.5-5.0 mu m, such as 5.0 mu m; the radius of the micro-column cavity is 8-20 μm, such as 8 μm; in the vertical direction, the geometric axis of the optical pump is parallel to the geometric axis of the micro-column cavity and is 200 μm to 500 μm, such as 200 μm, away.
When the pump light enters the grooves 12, most of the pump light effectively enters the quantum dot active gain layer 6 of the micro-column cavity, and even if reflection exists, the pump light enters the quantum dot active gain layer 6 after multiple reflections.
The fabrication process of the single photon source with asymmetric micro-disk cavity optical pump of the invention is as follows. As shown in fig. 2 and 3, a semiconductor epitaxial growth process is adopted to sequentially grow a buffer layer 9 made of N-type GaAs and an Al made of N-type Al on a substrate 10 made of N-type GaAs with high doping concentration 0.1 Ga 0.9 As/Al 0.8 Ga 0.2 As lower distributed Bragg reflector 8 made of N-type Al 0.5 The lower waveguide layer 7 of GaAs, the active gain layer 6 of InAs/GaAs quantum dot and the P-type Al 0.5 The upper waveguide layer 5 of GaAs is made of P-type Al 0.1 Ga 0.9 As/Al 0.8 Ga 0.2 The upper distribution Bragg reflector 3 of As and the covering layer 2 of the P-type GaAs material; according to the shape and position of the asymmetric microdisk cavity as shown in FIGS. 4-6, anThe shape and position of the micro-column cavity with the groove 12 are shown in fig. 4, 7 and 8, a mask is manufactured, and then an epitaxial structure is etched to the buffer layer 9 by adopting a semiconductor etching process, so that an asymmetric micro-disc cavity and the micro-column cavity with the groove 12 are obtained synchronously; adopts a semiconductor wet oxidation process to form Al 2 O 3 An oxide confinement layer 4; an electrode metal layer 1 made of Au/Ge/Ni is manufactured on the cover layer 2, a lower electrode 11 made of Ti/Pt/Au is manufactured on the bottom surface of the substrate 10, and the electrode metal layer 1 and the lower electrode 11 are manufactured in a layering mode and then subjected to alloying treatment; finally, a light outlet 13 is formed in the central part of the electrode metal layer 1 of the micro-column cavity.
Claims (6)
1. The single photon source with the asymmetric micro-disc cavity optical pump comprises an optical pump and a micro-column cavity, and is characterized in that the optical pump is a micro-disc cavity, the micro-disc cavity and the micro-column cavity are separated on the same lower electrode (11), a substrate (10) and a buffer layer (9), and the micro-disc cavity and the micro-column cavity have the same epitaxial structure; the same epitaxial structure is that a lower distributed Bragg reflector (8), a lower waveguide layer (7), a quantum dot active gain layer (6), an upper waveguide layer (5), an oxide limiting layer (4), an upper distributed Bragg reflector (3), a covering layer (2) and an electrode metal layer (1) are sequentially arranged from bottom to top; the micro-disc cavity is an asymmetric micro-disc cavity, and the light emitting direction faces the micro-column cavity; the part of the side surface of the micro-column cavity facing the micro-disc cavity is provided with a groove (12), the central part of the electrode metal layer (1) of the micro-column cavity is provided with a light outlet (13) with the radius of 0.5-5.0 mu m, and the radius of the micro-column cavity is 8-20 mu m; in the vertical direction, the geometric axis of the optical pump is parallel to the geometric axis of the micro-column cavity and is 200-500 μm away.
2. The single photon source with asymmetric micro-disk cavity optical pumping according to claim 1, wherein the asymmetric micro-disk cavity is one of a spiral asymmetric micro-disk cavity, a spiral asymmetric micro-disk cavity and an elliptical asymmetric micro-disk cavity.
3. The single photon source with asymmetric microdisk cavity optical pumping according to claim 2, whichCharacterized in that the spiral polar coordinate equation of the spiral asymmetric micro-disk cavity is ρ (θ) =ρ 0 (1+epsilon cos theta), the spiral polar coordinate equation of the spiral asymmetric micro-disc cavity is
Wherein: ρ (θ) is the polar diameter, θ is the polar angle, ε is the deformation factor, ε=0.1 to 2, ρ 0 Is a characteristic radius, that is, a polar radius when the polar angle θ of the spiral is=pi/2, the polar angle θ of the spiral is=0°, and ρ 0 ＝90μm～180μm。
4. The single photon source with asymmetric micro disk cavity optical pump as in claim 1 wherein the groove (12) on the side of the micro column cavity facing the micro disk cavity is one of a single concave cylindrical groove, a single concave trapezoidal cylindrical groove and a tri-concave cylindrical groove.
5. The single photon source with asymmetric microdisk cavity optical pumping according to claim 4, characterized in that when the groove (12) is a single concave cylindrical groove, the cylindrical chord length is 6 μm-18 μm, the cylindrical radius is 8 μm-20 μm; when the groove (12) is a single concave trapezoid column-shaped groove, the lower bottom of the trapezoid is 6-18 mu m in length, the height is 4-8 mu m, and the upper bottom is 4-12 mu m in length; when the groove (12) is a three-concave cylindrical groove, the sum of chord lengths of the three cylindrical surfaces is 6-18 mu m, and the radius of the cylindrical surface is 1-3 mu m.
6. The single photon source with self-asymmetric micro-disk cavity optical pumping according to claim 1, wherein the manufacturing process of the single photon source with self-asymmetric micro-disk cavity optical pumping is as follows: a semiconductor epitaxial growth process is adopted, a buffer layer (9) made of N-type GaAs and Al made of N-type Al are sequentially grown on a substrate (10) made of high-doping concentration N-type GaAs 0.1 Ga 0.9 As/Al 0.8 Ga 0.2 The lower distribution Bragg reflector (8) of As is made of N-type Al 0.5 Lower waveguide layer (7) of GaAs, quantum dot active gain made of InAs/GaAsThe layer (6) is made of P-type Al 0.5 An upper waveguide layer (5) of GaAs is made of P-type Al 0.1 Ga 0.9 As/Al 0.8 Ga 0.2 A Bragg reflector (3) is distributed on As, and a covering layer (2) made of P-type GaAs is formed on the As;
manufacturing a mask plate according to the shape and the position of the asymmetric micro-disc cavity and the shape and the position of the micro-column cavity with the groove (12), and then etching the epitaxial structure to the buffer layer (9) by adopting a semiconductor etching process to synchronously obtain the asymmetric micro-disc cavity and the micro-column cavity with the groove (12); adopts a semiconductor wet oxidation process to form Al 2 O 3 An oxide confinement layer (4); an electrode metal layer (1) made of Au/Ge/Ni is manufactured on the cover layer (2), a lower electrode (11) made of Ti/Pt/Au is manufactured on the bottom surface of the substrate (10), and the electrode metal layer (1) and the lower electrode (11) are manufactured in a layering mode and then are subjected to alloying treatment; finally, a light outlet (13) is formed in the center part of the electrode metal layer (1) of the micro-column cavity.
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