CN110010445B - Method for manufacturing support substrate for bonded wafer and method for manufacturing bonded wafer - Google Patents
Method for manufacturing support substrate for bonded wafer and method for manufacturing bonded wafer Download PDFInfo
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- CN110010445B CN110010445B CN201811523671.0A CN201811523671A CN110010445B CN 110010445 B CN110010445 B CN 110010445B CN 201811523671 A CN201811523671 A CN 201811523671A CN 110010445 B CN110010445 B CN 110010445B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Abstract
A method for manufacturing a support substrate for a bonded wafer and a method for manufacturing a bonded wafer are provided, which can reduce the boron concentration in the bonded wafer. The method is characterized by comprising the following steps: a first step (step S1) of removing all oxide films on the surface of a 1 st silicon wafer composed of a silicon single crystal to be bonded to an active layer substrate; a second step of forming an oxide film on a surface of the 1 st silicon wafer to be bonded to the active layer substrate in the vapor phase growth apparatus (step S2); and a third step of forming a polysilicon layer on the formed oxide film (step S3).
Description
Technical Field
The present invention relates to a method for manufacturing a supporting substrate for a bonded wafer (bonded wafer) and a method for manufacturing a bonded wafer.
Background
Conventionally, an SOI (Silicon On Insulator ) wafer has been used as a substrate for a Radio Frequency (RF) device. The SOI wafer has silicon oxide (SiO) sequentially formed on a support substrate (e.g., silicon wafer) 2 ) And the structure of the insulating film and the active layer.
One representative method of the method of manufacturing an SOI wafer is a bonding method. The bonding method is a method of forming an insulating film on at least one of a support substrate and a substrate for an active layer, bonding these substrates via the insulating film, and then applying a heat treatment at a high temperature of about 1200 ℃.
In the bonded wafer, RF is processed based on a high resistance (for example, a resistivity of 3000 Ω and cm or more) of the support substrate. However, in order to cope with further higher speeds, it is required to cope with higher frequencies, and it is no longer possible to cope with only a higher resistance of the support substrate.
Accordingly, it is proposed to form a polysilicon layer as a carrier trapping layer on the surface of a support substrate for trapping and destroying carriers generated in a high-frequency operation (for example, refer to patent document 1). Since the polysilicon layer is well formed on the oxide film, the oxide film is formed on the support substrate by wet etching or the like, and polysilicon is formed thereon (for example, refer to patent document 2).
In addition, in an air conditioner of a clean room for manufacturing bonded wafers, a filter made of glass fiber is generally used, but when corrosive gas such as hydrogen fluoride gas is present in an atmosphere during processing of wafers, electrically active boron is released into the atmosphere of the clean room due to adhesion of the corrosive gas to the filter.
The support substrate having the oxide film formed on the surface thereof is exposed to the atmosphere of the clean room before being transferred to the vapor phase growth apparatus to form the polysilicon layer. Accordingly, boron released into the atmosphere of the clean room is adsorbed to the sites of the oxide film surface of the support substrate with charges. In this state, when a polysilicon layer is formed on the oxide film surface, boron is accumulated at a high concentration at the interface between the polysilicon layer and the oxide film thereunder, and it is detected that the concentration exceeds 1×10 15 Atoms/cm 3 Is a peak of the boron concentration of (a).
Since a high-resistance silicon wafer is used as a support substrate, if boron is accumulated at such a high concentration at the interface between the polysilicon layer and the oxide film, there is a possibility that the high-frequency characteristics of the device will be deteriorated. Particularly in recent years, in order to improve the high frequency characteristics, an ultra-high resistance substrate of 10000 Ω or more is used, and the high concentration of boron accumulated at the interface between the polysilicon layer and the oxide film causes a significant influence on the high frequency characteristics.
As a method for reducing the concentration of boron in such a bonded wafer, patent document 3 describes using an air filter that does not release boron (hereinafter referred to as a "boron-free filter") or a filter that adsorbs boron (hereinafter referred to as a "boron-adsorbing filter") as a filter for air conditioning equipment in a clean room.
However, in order to replace the filter of the air conditioner in the clean room with the boron-free filter or the boron adsorption filter, not only a large amount of equipment investment is required, but also a wafer manufacturing operation must be stopped for a long time.
On the other hand, patent document 4 describes a technique of removing impurities adhering to the surface by performing heat treatment on the support substrate just before forming the polysilicon layer, and etching only the oxide film surface, instead of the countermeasure against the air conditioner as in patent document 3. According to the method of patent document 4, deterioration of high frequency characteristics can be surely prevented.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2007-507093
Patent document 2: japanese patent application laid-open No. 2014-509087
Patent document 3: japanese patent No. 4070949
Patent document 4: japanese patent application laid-open No. 2017-5078.
Disclosure of Invention
Problems to be solved by the invention
However, when a bonded wafer is produced by removing a part of an oxide film by etching and then forming a polysilicon layer according to the method described in patent document 4, it is clear that boron cannot be removed sufficiently because a high concentration of boron is detected between the polysilicon layer and the oxide film thereunder.
The object of the present invention is therefore to propose: a method for manufacturing a support substrate for a bonded wafer and a method for manufacturing a bonded wafer, which can reduce the boron concentration in the bonded wafer.
Means for solving the problems
The present invention to solve the above problems is as follows.
(1) A method for manufacturing a support substrate for a bonded wafer, the bonded wafer being formed by bonding an active layer substrate and the support substrate, the method comprising:
a first step of removing all oxide films on the surface of a 1 st silicon wafer composed of a silicon single crystal to be bonded to the active layer substrate,
a second step of forming an oxide film on a surface of the 1 st silicon wafer to be bonded to the active layer substrate in a vapor phase growth apparatus, and
and a third step of forming a polysilicon layer on the oxide film formed as described above.
(2) The method for manufacturing a bonded wafer support substrate according to (1), wherein the second step is performed in a load lock chamber (load lock chamber) of the vapor phase growth apparatus.
(3) The method for manufacturing a supporting substrate for a bonded wafer according to (1) or (2), wherein in the first step, the silicon layer on the surface of the 1 st silicon wafer from which the oxide film has been completely removed is further removed.
(4) The method for producing a supporting substrate for bonded wafers according to (3), wherein the thickness of the removed silicon layer is 0.5 μm or more.
(5) The method for producing a bonded wafer support substrate according to any one of (1) to (4), wherein the oxide film formed in the third step has a thickness of 10nm or less.
(6) The method for producing a bonded wafer support substrate according to any one of (1) to (5), wherein in the third step, the polysilicon layer is formed at a temperature of 900 ℃ or lower.
(7) A method for manufacturing a bonded wafer is characterized by comprising:
a fourth step of forming an insulating film on the surface of the active layer substrate or the surface of the support substrate manufactured by the method according to any one of the above (1) to (6), and
and a fifth step of bonding the active layer substrate to the support substrate via the polysilicon layer and the insulating film.
Effects of the invention
According to the present invention, the boron concentration in the bonded wafer can be reduced.
Drawings
Fig. 1 is a flowchart of a method of manufacturing a supporting substrate for bonding a wafer according to the present invention.
FIG. 2 is a schematic view of an example of a vapor phase growth apparatus.
Fig. 3 is a flow chart of a method of fabricating a bonded wafer according to the present invention.
Fig. 4 is a graph showing boron concentration distribution in the thickness direction of the wafer in the example.
Detailed Description
(method for manufacturing support substrate for bonded wafer)
Embodiments of the present invention will be described below with reference to the drawings. Fig. 1 shows a flowchart of a method of manufacturing a supporting substrate for bonding a wafer according to the present invention. A method for manufacturing a support substrate for a bonded wafer according to the present invention is a method for manufacturing the support substrate in a bonded wafer in which an active layer substrate and the support substrate are bonded, the method comprising: a first step (step S1) of removing all oxide films on the surface of a 1 st silicon wafer composed of a silicon single crystal to be bonded to the active layer substrate; a second step of forming an oxide film on a surface of the 1 st silicon wafer to be bonded to the active layer substrate in a vapor phase growth apparatus (step S2); and a third step of forming a polysilicon layer on the oxide film formed as described above (step S3).
As described above, if electrically active boron exists in the bond wafer at a high concentration, there is a possibility that the high frequency characteristics of the device are deteriorated. Therefore, it is important to reduce the concentration of boron in the bonded wafer. The inventors tried to manufacture a bonded wafer by first removing a part of an oxide film formed on a support substrate by heat treatment etching, then forming a polysilicon layer, and then bonding the polysilicon layer to an active layer substrate on which an insulating film is formed, according to the method described in patent document 4. As a result, more than 1X 10 is detected between the polysilicon layer and the oxide film thereunder 15 Atoms/cm 3 The peak of the boron concentration of (c) revealed that boron was not sufficiently removed.
The inventors believe that the reason why such a high concentration of boron is detected is that, since the oxide film has porosity, boron adhering to the surface of the oxide film does not stay on the surface of the oxide film but diffuses to a deep position of the oxide film.
Accordingly, the present inventors have studied how much the oxide film is removed to sufficiently remove boron attached to the oxide film. As a result, the following conclusion is reached: the boron cannot be sufficiently removed by removing only a part of the oxide film, and the oxide film must be completely removed in order to sufficiently remove the boron.
However, since the polysilicon layer can be formed well on the oxide film, when the oxide film is removed entirely for removing boron, the oxide film must be formed again. At this time, when the oxide film is formed by wet etching or the like, the support substrate is exposed to the atmosphere of the clean room, and boron is reattached to the surface of the support substrate.
Accordingly, the present inventors have made intensive studies on a way of forming an oxide film without reattaching boron on the surface of a support substrate, and as a result, have conceived to form an oxide film in a vapor phase growth apparatus. The vapor phase growth apparatus is isolated from the atmosphere of the clean room, and is generally provided with an apparatus for forming an oxide film. Therefore, the oxide film can be formed without reattaching boron on the surface of the support substrate. Thus, the present invention has been completed. The steps are described below.
First, in step S1, all oxide films on the surface of a silicon wafer (1 st silicon wafer) made of a silicon single crystal, which is to be bonded to an active layer substrate, are removed (first step). As described above, the polysilicon layer can be formed well by forming the oxide film on the surface of the support substrate and forming the polysilicon on the oxide film, but in order to sufficiently remove the boron adhering to the oxide film, it is necessary to temporarily remove all the oxide film.
The support substrate is a substrate that serves as a support substrate for the device. As the support substrate, a silicon wafer composed of a silicon single crystal may be used. As the silicon wafer, a silicon wafer obtained by slicing a single crystal silicon ingot grown by a czochralski method (CZ method) or a float zone melting method (FZ method) with a wire saw or the like can be used. In addition, an arbitrary impurity may be added to make n-type or p-type.
The silicon wafer may be subjected to a known chamfering step, grinding step, etching step, polishing step, and cleaning step. After these steps are performed, an oxide film of the silicon wafer may be formed.
The method for forming the oxide film is not particularly limited, and the oxide film may be formed by thermal oxidation under an oxidizing atmosphere, or oxidation heat treatment using a rapid heating and rapid cooling (RTA: rapid Thermal Annealing, rapid thermal annealing) apparatus, or the like. In addition, a natural oxide film formed on the surface of the silicon wafer after the cleaning step is performed may also be used as an oxide film for forming the polysilicon layer.
The resistivity of the support substrate is preferably 100deg.OMEGA..about.cm or more. Thus, it can be used as a support substrate for a bonded wafer used in an RF device. The resistivity is more preferably 3000. OMEGA. Or more, still more preferably 10000. OMEGA. Or more. The upper limit of the resistivity corresponds to the resistivity of an intrinsic semiconductor of undoped silicon, but when the resistivity is high, i.e., 100000 Ω cm or more, the resistance measurement becomes difficult, and the conductivity may be reversed, for example, the p-type may be reversed to the n-type. Therefore, the resistivity of the support substrate is preferably less than 100000 Ω and cm.
The oxide film on the surface of the silicon wafer (1 st silicon wafer) serving as the support substrate to be bonded to the active layer substrate was removed entirely. This may be performed in a process chamber of a vapor phase growth apparatus. FIG. 2 is a schematic view showing an example of a vapor phase growth apparatus that can be used in the present invention. In the vapor phase growth apparatus 1 shown in fig. 2, around the transfer chamber 7, the process chambers 2, 3 for vapor phase growth, the load lock chambers 10, 11, and the cooling chamber 14 are each connected. A wafer transfer device 6 is disposed in the transfer chamber 7, and the wafer transfer device 6 transfers and sends out silicon wafers to and from each chamber.
Susceptors 4 and 5 are disposed in the processing chambers 2 and 3, respectively. Cassettes 8 and 9 which can accommodate silicon wafers 12 and 13 are disposed in the load lock chambers 10 and 11, respectively. The cooling chamber 14 is provided for cooling the silicon wafers 12 and 13. Gate valves 15 and 16 are provided between the transfer chamber 7 and the load lock chambers 10 and 11, and between the transfer chamber 7 and the chambers 2 and 3, respectively.
In the processing chambers 2 and 3, the oxide film formed on the surface of the silicon wafer (1 st silicon wafer) can be removed. For example, the oxide film may be removed by heat-treating a silicon wafer under a hydrogen atmosphere. Specifically, the oxide film on the silicon wafer can be removed by: a hydrogen gas is introduced into the process chambers 2 and 3 to produce a hydrogen atmosphere, and a silicon wafer is subjected to a heat treatment for a period of 10 seconds to 300 seconds at a temperature of 1000 ℃ to 1200 ℃ inclusive and a pressure of 730 Torr to 790 Torr inclusive.
The oxide film may be removed by etching. Specifically, for example, the oxide film on the silicon wafer can be removed by: hydrogen gas and hydrogen chloride gas are introduced into the process chambers 2 and 3, and a silicon wafer (1 st silicon wafer) is subjected to a heat treatment at a temperature of 1000 ℃ or higher and 1200 ℃ or lower and a pressure of 730 Torr or higher and 790 Torr or lower for a time of 10 seconds or more and 300 seconds or less.
Thus, by removing all of the oxide film on the surface of the silicon wafer (1 st silicon wafer) to be bonded to the active layer substrate, boron adhering to the oxide film can be sufficiently removed. Specifically, the peak concentration of boron at the interface of the later-formed polysilicon layer and the underlying oxide film can be reduced to less than 1X 10 15 Atoms/cm 3 。
After the oxide film is removed as described above, the silicon layer on the surface of the silicon wafer (1 st silicon wafer) from which the oxide film has been removed is preferably further removed. As a result of further studies by the present inventors, it was found that boron remains on the surface of the silicon wafer from which the oxide film was completely removed. In addition, it is known that boron on the surface of the silicon wafer does not diffuse to deep positions of the silicon wafer. Therefore, the boron concentration can be further reduced by removing a part of the silicon layer on the surface of the silicon wafer from which the oxide film has been removed. According to the study of the present inventors, by setting the thickness of the removed silicon layer to 0.5 μm or more, the peak concentration of boron at the interface of the polysilicon layer to be formed later and the oxide film thereunder can be reduced to less than 2X 10 14 Atoms/cm 3 。
Next, in step S2, an oxide film is formed on the surface of the silicon wafer (1 st silicon wafer) to be bonded to the active layer substrate in the vapor phase growth apparatus 1 (second step). In the above step S1, boron adhering to the oxide film of the silicon wafer (1 st silicon wafer) can be sufficiently removed. However, when the silicon wafer is exposed to the atmosphere of the clean room at the time of re-forming the oxide film, boron adheres again to the surface of the silicon wafer. Therefore, in the present invention, the oxide film is formed in the vapor phase growth apparatus 1 so as not to be exposed to the atmosphere of the clean room.
The oxide film may be formed in the load lock chambers 10 and 11 of the vapor phase growth apparatus 1, for example. That is, the load lock chambers 10 and 11 are isolated from the atmosphere of the clean room, and are generally configured to generate ozone for keeping the wafer surface clean after the epitaxial layer formation. Therefore, in the load lock chambers 10, 11, the silicon wafer (1 st silicon wafer) may be formed with an oxide film on the silicon wafer without exposing the silicon wafer to a boron-containing clean room atmosphere.
The thickness of the oxide film formed is preferably 0.5nm or more and 30nm or less. By setting the thickness of the oxide film to 0.5nm or more, a polysilicon layer can be formed thereon well. Further, by setting the thickness of the oxide film to 30nm or less, deterioration of high frequency characteristics due to the easiness of formation of the inversion layer on the surface side of the support substrate can be prevented. More preferably from 0.5nm to 2 nm.
Next, in step S3, a polysilicon layer is formed over the oxide film formed in step S2 (third step). The polysilicon layer may be formed by introducing hydrogen gas and trichlorosilane as a silicon source into the process chambers 2, 3. The formation of the polysilicon layer is preferably performed at 900 ℃ or less. This prevents a part of the oxide film formed on the surface of the silicon wafer (1 st silicon wafer) from disappearing, and a high-quality polysilicon layer can be formed.
The thickness of the polysilicon layer to be formed is preferably 100nm to 10000 nm. By setting the thickness of the polysilicon layer to 100nm or more, carriers generated when used in a high-frequency device can be captured well. In addition, by setting the thickness to 10000nm or less, warpage can be reduced, and bonding to the active layer substrate can be performed satisfactorily. More preferably 300nm to 3000 nm.
Thus, a supporting substrate for a bonded wafer capable of reducing the boron concentration in the bonded wafer can be manufactured.
(method for producing bonded wafer)
Next, a method of manufacturing a bonded wafer according to the present invention will be described. Fig. 3 shows a flow chart of a method of manufacturing a bonded wafer according to the present invention. The method for manufacturing a bonded wafer according to the present invention is characterized by comprising: a fourth step of forming an insulating film on the surface of a silicon wafer (second silicon wafer) made of a silicon single crystal as the substrate for an active layer (step S4), and a fifth step of bonding the substrate for an active layer to a support substrate manufactured by the above-described method for manufacturing a support substrate for a bonded wafer according to the present invention via a polysilicon layer and an insulating film (step S5).
As described above, with respect to the support substrate for bonding a wafer manufactured by the method according to the present invention, the oxide film formed on the surface of the support substrate is all temporarily removed, and then the oxide film is formed again in the vapor phase growth apparatus without being exposed to the atmosphere of the clean room, and the polysilicon layer is formed thereon. As a result, the concentration of boron accumulated between the polysilicon layer and the underlying oxide film is lower than before. Thus, by manufacturing a bonded wafer using the support substrate manufactured according to the present invention, the concentration of boron in the bonded wafer can be reduced. The steps S1 to S3 are steps of the method for manufacturing a support substrate for bonded wafers according to the present invention, and thus the description thereof will be omitted.
In step S4, an insulating film of a BOX (Buried Oxide) layer as a bond wafer is formed on the surface of a silicon wafer (second silicon wafer) composed of a silicon single crystal as a wafer for an active layer. Here, as the insulating film, an oxide film (SiO 2 Film) or a nitride film, for example, in the case of using an oxide film, the film can be formed by well-known thermal oxidation. The insulating film may be formed not on the active layer substrate but on the support substrate. In this case, since a part of the polysilicon layer becomes an insulating film, the polysilicon layer is formed by adding a thickness of an amount used as the insulating film.
Here, the thickness of the insulating film to be formed is preferably 0.001 μm or more and 1 μm or less. The thickness of the insulating film can be adjusted by the temperature and the treatment time of the heat treatment, the flow rate of the atmosphere gas, and the like.
Next, in step S5, the active layer wafer is bonded to the support substrate manufactured by the method according to the present invention described above via the polysilicon layer and the insulating film (fifth step). Thus, a bonded wafer having a reduced boron concentration can be manufactured.
After step S5, a heat treatment for reinforcing the bonding between the active layer substrate and the support substrate may be performed by a known method. The thickness of the active layer substrate may be adjusted by performing a grinding step and a polishing step on the active layer substrate.
Examples
(inventive example 1)
A supporting substrate for bonding a wafer was fabricated according to the flowchart shown in fig. 1. First, a single crystal silicon wafer (diameter: 200mm, crystal orientation <100>, resistivity: 10000. OMEGA..times.cm, p-type) obtained by the CZ method was prepared. The silicon wafer is subjected to a predetermined chamfering step, grinding step, etching step, and polishing step, and then subjected to SC-1 cleaning. A natural oxide film of 1nm was formed on the surface of the support substrate subjected to such treatment.
TABLE 1
Next, the silicon wafer was transferred to a process chamber of a vapor phase growth apparatus, and heat treatment under a hydrogen atmosphere was performed on the silicon wafer under the conditions shown in table 1, so that the natural oxide film on the surface of the silicon wafer was removed entirely. Then, the silicon wafer from which the natural oxide film was removed was transferred into a load lock chamber, oxygen gas was supplied into the load lock chamber to generate ozone, and a 1nm oxide film was formed on the surface of the silicon wafer. Then, the silicon wafer was transferred into a process chamber, a 2 μm polysilicon layer was formed on the oxide film under the conditions shown in table 1, and then the surface was polished to planarize in a polishing step. Thus, a supporting substrate for bonding a wafer is formed.
(inventive example 2)
A supporting substrate for bonding a wafer was formed in the same manner as in inventive example 1. However, the oxide film was removed by etching under the conditions shown in table 1, and the 0.6 μm silicon layer on the surface of the silicon wafer was removed at the same time as the oxide film was removed entirely. Other conditions were exactly the same as in inventive example 1.
Comparative example
A supporting substrate for bonding a wafer was formed in the same manner as in inventive example 1. However, the oxide film before removal in the vapor phase growth apparatus was formed by using an RTA apparatus, and the thickness of the oxide film formed was 30nm. In addition, the heat treatment under the hydrogen atmosphere was performed under the conditions shown in table 1, only the surface layer of the oxide film was removed, and the formation of the oxide film in the load lock chamber was not performed. Other conditions were exactly the same as in inventive example 1.
< evaluation of polysilicon layer by SEM >
The quality of the polysilicon layer formed on the oxide film in the support substrate obtained in each of the examples and comparative examples was evaluated by a scanning electron microscope (SEM: scanning Electron Microscope). As a result, it was found that each grain boundary was random in crystal orientation, and each of the inventive examples and comparative examples was of a quality without problems.
< evaluation of boron concentration >
In the support substrates obtained in each of the examples and comparative examples, the boron concentration distribution in the substrate depth direction of the oxide film was measured by secondary ion mass spectrometry (SIMS: secondary Ion Mass Spectrometry). The peak concentrations obtained are shown in table 1.
As shown in Table 1, the peak concentration of boron in the comparative example is as high as 2.3X10 15 Atoms/cm 3 In contrast, in invention example 1, the ratio was 3.1X10 14 Atoms/cm 3 The peak concentration of boron is greatly reduced. In addition, in the invention example 2, no peak of boron concentration was detected, and it was found that the boron concentration could be further reduced by further removing the silicon layer on the surface of the silicon wafer from which the oxide film was removed.
Industrial applicability
According to the present invention, the boron concentration in the bond wafer can be reduced, and thus is useful in the semiconductor wafer manufacturing industry.
Symbol description
1. Vapor phase growth device
2.3 treatment chamber
4. 5 base
6. Wafer conveying device
7. Conveying chamber
8. 9 boxes
10. 11 load lock chamber
12. 13 silicon wafer
14. Cooling chamber
15. 16 gate valve
Claims (6)
1. A method for manufacturing a support substrate for a bonded wafer, the bonded wafer being formed by bonding an active layer substrate and the support substrate, the method comprising:
a first step of removing all oxide films on the surface of a 1 st silicon wafer composed of a silicon single crystal to be bonded to the active layer substrate,
a second step of forming an oxide film on a surface of the 1 st silicon wafer to be bonded to the active layer substrate in a vapor phase growth apparatus, and
a third step of forming a polysilicon layer on the oxide film formed as described above,
the second step is performed by generating ozone in a load lock chamber of the vapor phase growth apparatus,
the third step is performed in a processing chamber of the vapor phase growth apparatus.
2. The method for manufacturing a bonded wafer support substrate according to claim 1, wherein in the first step, the silicon layer on the surface of the 1 st silicon wafer from which the oxide film has been completely removed is further removed.
3. The method for producing a supporting substrate for bonding a wafer according to claim 2, wherein the thickness of the removed silicon layer is 0.5 μm or more.
4. The method for producing a supporting substrate for a bonded wafer according to any one of claims 1 to 3, wherein the oxide film formed in the second step has a thickness of 0.5nm to 30nm.
5. The method for producing a supporting substrate for a bonded wafer according to any one of claims 1 to 3, wherein in the third step, the polysilicon layer is formed at a temperature of 900 ℃ or lower.
6. A method for manufacturing a bonded wafer is characterized by comprising:
a fourth step of forming an insulating film on a surface of a second silicon wafer made of a silicon single crystal as the substrate for an active layer or a surface of the support substrate manufactured by the method according to any one of claims 1 to 5, and
and a fifth step of bonding the active layer substrate to the support substrate via the polysilicon layer and the insulating film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-242514 | 2017-12-19 | ||
| JP2017242514A JP6834932B2 (en) | 2017-12-19 | 2017-12-19 | Manufacturing method of support substrate for bonded wafer and manufacturing method of bonded wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110010445A CN110010445A (en) | 2019-07-12 |
| CN110010445B true CN110010445B (en) | 2023-05-02 |
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| JP2019110221A (en) | 2019-07-04 |
| CN110010445A (en) | 2019-07-12 |
| JP6834932B2 (en) | 2021-02-24 |
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