CN110010445A - The manufacturing method of bonding wafer supporting substrate and the manufacturing method of bonding wafer - Google Patents
The manufacturing method of bonding wafer supporting substrate and the manufacturing method of bonding wafer Download PDFInfo
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- CN110010445A CN110010445A CN201811523671.0A CN201811523671A CN110010445A CN 110010445 A CN110010445 A CN 110010445A CN 201811523671 A CN201811523671 A CN 201811523671A CN 110010445 A CN110010445 A CN 110010445A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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Abstract
Propose the manufacturing method of the manufacturing method and bonding wafer that can reduce the bonding wafer supporting substrate of the concentration of the boron in bonding wafer.It is characterized in that having: the first step (step S1) that the oxidation film on the surface of the 1st silicon wafer being made of silicon single crystal to be bonded with active layer with substrate is all removed；In epitaxially growing equipment, the second step (step S2) of oxidation film is formed on the surface of the 1st silicon wafer to be bonded with active layer with substrate；With the third step (step S3) for forming polysilicon layer on the oxidation film of formation.
Description
Technical field
The manufacturing method of supporting substrate and the manufacture of bonding wafer are used the present invention relates to bonding wafer (bonded wafer)
Method.
Background technique
In the past, SOI (Silicon On Insulator, insulating layer cover silicon) chip was used as high frequency (RF:Radio
Frequency, radio frequency) device substrate.SOI wafer, which has, sequentially forms silica on supporting substrate (such as silicon wafer)
(SiO2) etc. insulating films and active layer structure.
A kind of exemplary process for manufacturing the method for SOI wafer is bonding method.The bonding method is in supporting substrate and activity
These substrates are then bonded, then with 1200 DEG C or so by layer with insulating film is formed at least one of substrate via insulating film
High temperature apply heat treatment, thus manufacture SOI wafer method (below by the SOI wafer manufactured by bonding method be known as " bonding
Chip ").
In above-mentioned bonding wafer, the high resistance (such as resistivity is 3000 Ω cm or more) based on supporting substrate is come needle
RF is handled.However, due in order to cope with further high speed, and require to cope with high frequency, only by supporting substrate
High resistance become to be no longer able to cope with.
Therefore, it is proposed to formed on the surface of supporting substrate for by the carrier capture generated in high frequencies of operation and
The polysilicon layer of elimination is as carrier capture layer (referring for example to patent document 1).Polysilicon layer good landform on oxidation film
At, therefore oxidation film is formed on supporting substrate by wet etching etc., and be formed on polysilicon (referring for example to patent document
2)。
In addition, in the air-conditioning equipment of the toilet of manufacture bonding wafer, usually using the filtering being made of glass fibre
Device, but when handling chip, if there are the corrosive gas such as hydrogen fluoride gas in atmosphere, since corrosive gas was attached to
Filter causes the boron of electrical activity to be discharged into the atmosphere of toilet.
The supporting substrate that surface forms oxidation film is formed before polysilicon layer in being transported to epitaxially growing equipment, cruelly
It is exposed in the atmosphere of toilet.Therefore, the boron being discharged into the atmosphere of toilet is adsorbed to the oxidation film surface of supporting substrate
Site with charge.In such a state, when forming polysilicon layer on aoxidizing film surface, polysilicon layer and the oxygen under it
Change the boron for accumulating high concentration on the interface of film, detects more than 1 × 1015A atom/cm3Boron concentration peak value.
Due to using high-resistance silicon wafer as supporting substrate, if being accumulated in this way on the interface of polysilicon layer and oxidation film
The boron of high concentration, then the high frequency characteristics of device has the possibility of deterioration.Especially in recent years, it in order to improve high frequency characteristics, uses
The ultra-high resistance substrate of 10000 Ω cm or more, and the boron of the high concentration accumulated on the interface of polysilicon layer and oxidation film will lead to
Largely effect on high frequency characteristics.
As the method for the concentration for reducing boron in such bonding wafer, use is described in patent document 3 and is not discharged
The air filter (hereinafter referred to as " boron free filter ") of boron or the filter (hereinafter referred to as " boron adsorption filter ") for adsorbing boron
The filter of air-conditioning equipment as toilet.
However, in order to by the filter replacement of the air-conditioning equipment of toilet at boron free filter or boron adsorption filter, no
A large amount of equipment investment is only needed, there are also must stop chip manufacturing operation for a long time.
On the other hand, in patent document 4, describe not as described in Patent Document 3 towards the countermeasure of air-conditioning equipment, and
Be by supporting substrate face to form polysilicon layer before implement be heat-treated, only will oxidation film surface etching, to remove table
The technology of the impurity of face attachment.According to the method for patent document 4, the deterioration of high frequency characteristics can be certainly prevented.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Application Publication 2007-507093 bulletin
Patent document 2: Japanese Unexamined Patent Application Publication 2014-509087 bulletin
Patent document 3: No. 4070949 bulletins of Japanese Patent No.
Patent document 4: Japanese Unexamined Patent Publication 2017-5078 bulletin.
Summary of the invention
Problems to be solved by the invention
However, being formed after the present inventor is removed a part of oxidation film by etching according to method documented by patent document 4
Polysilicon layer when making bonding wafer, the boron of high concentration is detected between the oxidation film under polysilicon layer and its, is specified
It is unable to fully remove boron.
Therefore, it is an object of the invention to propose: can reduce the bonding wafer support of the boron concentration in bonding wafer
The manufacturing method of substrate and the manufacturing method of bonding wafer.
Means for solving the problems
The present invention for solving the above subject is as follows.
(1) manufacturing method of bonding wafer supporting substrate, the method to manufacture the supporting substrate in bonding wafer,
The bonding wafer is bonded by active layer with substrate with aforementioned supporting substrate, and the method is characterized in that, is had:
First step, by the oxidation on the surface of the 1st silicon wafer being made of silicon single crystal to be bonded with foregoing active layer with substrate
Film all removes,
Second step, in epitaxially growing equipment, on the surface of aforementioned 1st silicon wafer to be bonded with foregoing active layer with substrate
Upper formation oxidation film, and
Third step forms polysilicon layer on the oxidation film being previously formed.
(2) manufacturing method of bonding wafer supporting substrate described in aforementioned (1), wherein aforementioned second step is aforementioned
It is carried out in the load lock chamber (load lock chamber) of epitaxially growing equipment.
(3) manufacturing method of bonding wafer supporting substrate described in aforementioned (1) or (2), wherein aforementioned first process step
In, further remove the silicon layer for aforementioned 1st silicon wafer surface that aforementioned oxide coatings have all removed.
(4) manufacturing method of bonding wafer supporting substrate described in aforementioned (3), wherein the thickness of the aforementioned silicon layer of removing
Degree is 0.5 μm or more.
(5) manufacturing method of bonding wafer supporting substrate described in any one of aforementioned (1) ~ (4), wherein aforementioned
In three steps, the aforementioned oxide coatings of formation with a thickness of 10nm or less.
(6) manufacturing method of bonding wafer supporting substrate described in any one of aforementioned (1) ~ (5), wherein aforementioned
In three steps, aforementioned polysilicon layer is formed at 900 DEG C of temperature below.
(7) manufacturing method of bonding wafer, which is characterized in that have:
Four steps, before being manufactured on the surface of foregoing active layer substrate or by the method for any one of aforementioned (1) ~ (6)
It states and forms insulating film on the surface of supporting substrate, and
5th step, via aforementioned polysilicon layer and aforementioned dielectric film, by foregoing active layer substrate and aforementioned supporting substrate key
It closes.
Invention effect
According to the present invention it is possible to reduce the boron concentration in bonding wafer.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of bonding wafer supporting substrate according to the present invention.
Fig. 2 is the schematic diagram of an example of epitaxially growing equipment.
Fig. 3 is the flow chart of the manufacturing method of bonding wafer according to the present invention.
Fig. 4 is the figure for showing the boron concentration distribution in the wafer thickness direction in embodiment.
Specific embodiment
(manufacturing method of bonding wafer supporting substrate)
Below with reference to attached drawing, embodiments of the present invention will be described.Fig. 1 shows bonding wafer support according to the present invention
The flow chart of the manufacturing method of substrate.The manufacturing method of bonding wafer according to the present invention supporting substrate is manufacture in active layer
The method of above-mentioned supporting substrate in bonding wafer made of being bonded with substrate with supporting substrate, it is characterised in that have: will be by
The first step that the oxidation film on the surface of the 1st silicon wafer that silicon single crystal is constituted to be bonded with above-mentioned active layer with substrate all removes
Suddenly (step S1)；In epitaxially growing equipment, on the surface of above-mentioned 1st silicon wafer to be bonded with above-mentioned active layer with substrate
Form the second step (step S2) of oxidation film；With the third step (step for forming polysilicon layer on the oxidation film of above-mentioned formation
Rapid S3).
As described above, having the high frequency characteristics of device bad if the boron of electrical activity exists in bonding wafer with high concentration
The possibility of change.It is therefore important that reducing the concentration of boron in bonding wafer.The present inventor has attempted first, in accordance with patent document 4
A part of the oxidation film formed on supporting substrate is removed by heat treatment etching, is subsequently formed more by the method for middle record
Then crystal silicon layer makes bonding wafer with being formed with the active layer of insulating film with substrate and being bonded.As a result, polysilicon layer with
It detects between oxidation film under it more than 1 × 1015A atom/cm3Boron concentration peak value, specify and do not remove fully
Boron.
Inventors believe that the reason of detecting the boron of such high concentration is, since oxidation film has porosity, so
The boron being attached on the surface of oxidation film will not rest on the surface of oxidation film, and be to diffuse into the depth location of oxidation film.
Therefore, the present inventor for by oxidation film with the removing of which kind of degree can sufficiently remove the boron adhered on oxidation film into
Research is gone.As a result, having reached following conclusion: only removing a part of oxidation film and remove boron with being unable to fully, in order to incite somebody to action
Boron fully removes, it is necessary to all remove oxidation film.
However, since polysilicon layer can be formed well on oxidation film, in order to remove boron and by oxidation film
In the case where all removing, it is necessary to form oxidation film again.At this point, if forming oxidation film, supporting substrate by wet etching etc.
It can be exposed in the atmosphere of toilet, adhere to boron again on the surface of supporting substrate.
Therefore, the present inventor carries out for not adhering to the approach of the formation oxidation film of boron again on the surface of supporting substrate
Diligent research, as a result contemplates and forms oxidation film in epitaxially growing equipment.The interior atmosphere with toilet of epitaxially growing equipment
Isolation, and it is generally configured with the device to form oxidation film.Therefore, the feelings of boron can not adhered to again on the surface of supporting substrate
Oxidation film is formed under condition.So complete the present invention.Each step is illustrated below.
Firstly, in step sl, by the silicon wafer being made of silicon single crystal (the 1st silicon wafer), will be with active layer substrate
The oxidation film for being bonded the surface of side all removes (first step).As described above, by forming oxygen on the surface of supporting substrate
Change film and simultaneously form polysilicon on oxidation film, can form polysilicon layer well, but in order to fully remove be attached to it is above-mentioned
The boron of oxidation film, it is necessary to for the time being all remove oxidation film.
Supporting substrate is used as the substrate of the supporting substrate of device.As the supporting substrate, can be used by silicon single crystal structure
At silicon wafer.Silicon wafer, which can be used, uses the monocrystal silicon cultivated by vertical pulling method (CZ method) or floating zone meling method (FZ method)
Silicon wafer obtained by the slice such as scroll saw.Furthermore it is possible to which adding arbitrary impurity is made N-shaped or p-type.
Well known chamfering step or grinding step, etching step, grinding steps, cleaning step can be carried out to above-mentioned silicon wafer
Suddenly.After carrying out these steps, the oxidation film of silicon wafer can be formed.
The forming method of above-mentioned oxidation film is not particularly limited, can by thermal oxide in an oxidizing atmosphere or
Use the oxidizing thermal treatment of instant heating rapid cooling (RTA:Rapid Thermal Annealing, rapid thermal annealing) device
Etc. forming oxidation film.In addition, being also used as using in the natural oxide film that the surface of silicon wafer is formed after carrying out cleaning step
In the oxidation film for forming polysilicon layer.
The resistivity of supporting substrate is preferably 100 Ω cm or more.It can be used as bonding wafer used in RF device as a result,
Supporting substrate.Resistivity is more preferably 3000 Ω cm or more, further preferably 10000 Ω cm or more.In addition, resistivity
The upper limit correspond to the silicon not being doped intrinsic semiconductor resistivity, but resistivity be 100000 Ω cm or more
High-resistance situation under, resistance measurement becomes difficult, and conductivity type has reversion, such as p-type to be inverted to the possibility of N-shaped.Therefore, branch support group
The resistivity of plate is preferably smaller than 100000 Ω cm.
Surface will act as the silicon wafer (the 1st silicon wafer) of such supporting substrate, being bonded with active layer with substrate
Oxidation film all remove.This can be carried out in the process chamber of epitaxially growing equipment.Fig. 2 shows what be can be used in the present invention
The schematic diagram of an example of epitaxially growing equipment.In epitaxially growing equipment 1 shown in Fig. 2, around conveying chamber 7, it to be used for gas phase
The process chamber 2 of growth, 3, load lock chamber 10,11 and cooling chamber 14 respectively connect.Wafer transfer device is configured in conveying chamber 7
6, by the wafer transfer device 6, carry out the feeding from the silicon wafer to each room and submitting of.
Pedestal 4,5 is each configured in process chamber 2,3.In addition, being each configured in load lock chamber 10,11 can hold
Receive the box 8,9 of silicon wafer 12,13.It should be noted that cooling chamber 14 is arranged to cool down silicon wafer 12,13.In addition,
Between conveying chamber 7 and load lock chamber 10,11 and between conveying chamber 7 and room 2,3, it is respectively arranged with the gate being opened and closed
Valve 15,16.
In above-mentioned process chamber 2,3, the oxidation film formed on silicon wafer (the 1st silicon wafer) surface can remove.Such as oxygen
The removing for changing film can be removed by the way that silicon wafer to be heat-treated under a hydrogen atmosphere.Specifically, can be by such as getting off
It removes the oxidation film on silicon wafer: importing hydrogen into process chamber 2,3 and nitrogen atmosphere is made, at 1000 DEG C or more and 1200 DEG C or less
Temperature, more than 730 supports and under 790 supports pressure below, with 10 seconds or more and 300 seconds time below implemented heat to silicon wafer
Processing.
In addition, the removing of oxidation film can also be carried out by etching.Such as specifically, silicon can be removed by such as getting off
Oxidation film on chip: hydrogen and hydrogen chloride gas are imported into process chamber 2,3, in 1000 DEG C or more and 1200 DEG C of temperature below
More than degree, 730 supports and under 790 supports pressure below, with 10 seconds or more and 300 seconds time below was to silicon wafer (the 1st silicon wafer
Piece) implement heat treatment.
In this way, by by silicon wafer (the 1st silicon wafer), the oxidation film on surface to be bonded with active layer with substrate it is whole
It removes, can fully remove the boron for being attached to oxidation film.Specifically, can will the polysilicon layer that formed later and its under
The peak concentration of the interface boron of oxidation film drops below 1 × 1015A atom/cm3。
After removing oxidation film as described above, silicon wafer (the 1st silicon wafer that oxidation film has been removed preferably further is removed
Piece) surface silicon layer.According to the present invention people further study as a result, specifying the table of the silicon wafer all removed in oxidation film
On face, boron has many residuals.In addition, knowing that the boron of silicon wafer surface does not diffuse to the depth location of silicon wafer.Therefore, pass through
The silicon layer for the silicon wafer surface that oxidation film has been removed removes a part, can further decrease boron concentration.People according to the present invention
Research, by the way that the thickness of the silicon layer of removing is set as 0.5 μm or more, can by the polysilicon layer formed later and its under oxygen
The peak concentration for changing the interface boron of film drops below 2 × 1014A atom/cm3。
Then, in step s 2, in epitaxially growing equipment 1, silicon wafer (the 1st silicon wafer), to be used with active layer
Oxidation film (second step) is formed on the surface of substrate bonding.In above-mentioned steps S1, it can fully remove and be attached to silicon wafer
The boron of the oxidation film of (the 1st silicon wafer).But if silicon wafer is exposed to the atmosphere of toilet, silicon when forming oxidation film again
The surface of chip can adhere to boron again.Therefore, in the present invention, the formation of above-mentioned oxidation film is to be not exposed to the atmosphere of toilet
Mode carries out in epitaxially growing equipment 1.
The formation of oxidation film can for example carry out in the load lock chamber 10,11 of epitaxially growing equipment 1.That is, load lock
The gas isolating of room 10,11 Yu toilet is determined, usually can produce for the wafer surface cleaning after keeping epitaxial layer to be formed
The mode of ozone constitute.Therefore, in load lock chamber 10,11, silicon wafer (the 1st silicon wafer) can not be exposed to boracic
Clean room atmosphere, and oxidation film is formed on silicon.
The thickness of the oxidation film of formation is preferably set to 0.5nm or more and 30nm or less.By the way that the thickness of oxidation film is set as
0.5nm or more can form polysilicon layer well on it.In addition, by the way that the thickness of oxidation film is set as 30nm hereinafter, can
To prevent deterioration of the surface side of supporting substrate due to easily forming high frequency characteristics caused by inversion layer.More preferably 0.5nm or more
And 2nm or less.
Then, in step s3, polysilicon layer (third step) is formed on the oxidation film formed in step s 2.Polycrystalline
Silicon layer can be formed by the importing hydrogen into process chamber 2,3 and as the trichlorosilane of silicon source.The formation of the polysilicon layer
It is preferred that being carried out at 900 DEG C or less.Thus, it is possible to prevent the oxidation film formed on the surface of silicon wafer (the 1st silicon wafer) on one side
A part disappears, and forms the polysilicon layer of high-quality on one side.
In addition, the thickness of the polysilicon layer formed is preferably set to 100nm or more and 10000nm or less.By by polysilicon
The thickness of layer is set as 100nm or more, can be trapped in the carrier for generating when high-frequency element well.In addition, by setting
For 10000nm or less, it is possible to reduce warpage can carry out being bonded with active layer substrate well.More preferably 300nm with
Upper and 3000nm or less.
In this way, the bonding wafer supporting substrate that can reduce the concentration of the boron in bonding wafer can be manufactured.
(manufacturing method of bonding wafer)
Then, the manufacturing method of bonding wafer according to the present invention is illustrated.Fig. 3 shows bonding wafer according to the present invention
Manufacturing method flow chart.The manufacturing method of bonding wafer according to the present invention is characterized in that having: as active layer
With the four steps (step S4) for forming insulating film on the surface for the silicon wafer (the second silicon wafer) of substrate being made of silicon single crystal,
By above-mentioned active layer substrate and pass through above-mentioned bonding wafer according to the present invention branch with via polysilicon layer and insulating film
The manufacturing method of support group plate and manufacture supporting substrate bonding the 5th step (step S5).
It is by branch support group as described previously for bonding wafer supporting substrate made according to the method for the present invention is passed through
The oxidation film that the surface of plate is formed all temporarily removes, then in epitaxially growing equipment in the atmosphere for being not exposed to toilet
In the case where form oxidation film again, be formed on polysilicon layer.As a result, product between polysilicon layer and oxidation film under it
The concentration of tired boron is lower than previous.Bonding wafer is manufactured by using supporting substrate made according to the present invention as a result, it can
To reduce the concentration of the boron in bonding wafer.Each step is illustrated below, but step S1 ~ S3 be it is above-mentioned according to the present invention
Bonding wafer supporting substrate manufacturing method the step of, thus omit the description.
In step s 4, on the surface of the silicon wafer (the second silicon wafer) being made of silicon single crystal as active layer chip
The upper insulating film for forming BOX (Buried Oxide, buried oxide) layer as bonding wafer.It here, can as insulating film
To use oxidation film (SiO2Film) or nitride film etc., in the case where for example using oxidation film, well-known heat can be passed through
Oxidation is formed.It should be noted that the formation of insulating film can not be formed on supporting substrate in active layer with substrate.This
In the case of kind, since a part of polysilicon layer becomes insulating film, polysilicon layer is the thickness of the additional amount for being used as insulating film
Degree and formed.
Here, the thickness of the insulating film of formation is preferably set to 0.001 μm or more and 1 μm or less.In addition, the thickness of insulating film
Adjustment can be adjusted by the temperature of heat treatment and processing time, atmosphere gas flow etc..
Then, in step s 5, via polysilicon layer and insulating film by active layer chip with it is above-mentioned according to the present invention
The supporting substrate of method manufacture is bonded (the 5th step).In this way, the bonding wafer that the concentration that can manufacture boron reduces.
It should be noted that after step s 5, can also be carried out by well known method for strengthening active layer substrate
And the heat treatment of the combination of supporting substrate.Furthermore it is possible to grinding step, grinding steps be carried out with substrate to active layer, to adjust
The thickness of active layer substrate.
Embodiment
(example 1)
According to flow chart shown in FIG. 1, bonding wafer supporting substrate is made.Firstly, being ready to pass through the monocrystalline silicon of CZ method acquisition
Chip (diameter: 200mm, crystal orientation<100>, resistivity: 10000 Ω cm, p-type).Defined chamfering is carried out to the silicon wafer
Step, grinding step, etching step, grinding steps, then carry out SC-1 cleaning.Implementing such supporting substrate handled
Surface on form the natural oxide film of 1nm.
Table 1
Then, silicon wafer is transported in the process chamber of epitaxially growing equipment, hydrogen is implemented to silicon wafer under the conditions shown in Table 1
Heat treatment under atmosphere all removes the natural oxide film of silicon wafer surface.Then, the silicon wafer of natural oxide film will be eliminated
Piece is transported in load lock chamber, is supplied oxygen into load lock chamber to generate ozone, is formed 1nm on the surface of silicon wafer
Oxidation film.Then, silicon wafer is transported in process chamber, under the conditions shown in Table 1 in 2 μm of polysilicons of formation on oxidation film
Layer, then in grinding steps lapped face to planarize.In this way, forming bonding wafer supporting substrate.
(example 2)
Bonding wafer supporting substrate is identically formed with example 1.But the removing of oxidation film is by shown in the table 1
Under the conditions of etching carry out, while all removing oxidation film, remove 0.6 μm of silicon layer of silicon wafer surface.Other
Part is identical with example 1.
(comparative example)
Bonding wafer supporting substrate is identically formed with example 1.But the oxidation before being removed in epitaxially growing equipment
Film is formed using RTA device, the oxidation film of formation with a thickness of 30nm.In addition, carrying out hydrogen under the conditions shown in Table 1
Heat treatment under atmosphere only removes the surface layer of oxidation film, and the formation without the oxidation film in load lock chamber.Other
Part is identical with example 1.
<utilizing the evaluation of the polysilicon layer of SEM>
Using scanning electron microscope (SEM:Scanning Electron Microscope), evaluate in each example and ratio
Compared with the quality of the polysilicon layer formed on oxidation film in example supporting substrate obtained.Finally, it is found that each crystal boundary is random
Crystal orientation, and each of example and comparative example are qualities out of question.
<evaluation of boron concentration>
In each example and comparative example supporting substrate obtained, pass through Secondary Ion Mass Spectrometry (SIMS:Secondary Ion
Mass Spectrometry) measurement oxidation film substrate depth direction boron concentration distribution.The peak concentration of acquisition is shown in table 1
In.
As shown in table 1, the peak concentration of boron is up to 2.3 × 10 in a comparative example15A atom/cm3, in contrast, hair
Bright example 1 is then 3.1 × 1014A atom/cm3, it is known that the peak concentration of boron substantially reduces.In addition, it is dense that boron is not detected in example 2
The peak of degree, it is known that by further removing the silicon layer for the silicon wafer surface that oxidation film has removed, boron concentration can be further decreased.
Industrial utilizability
It according to the present invention it is possible to reduce the boron concentration in bonding wafer, therefore is useful in semiconductor wafer manufacturing industry.
Symbol description
1 epitaxially growing equipment
2,3 process chamber
4,5 pedestal
6 wafer transfer devices
7 conveying chambers
8,9 box
10,11 load lock chamber
12,13 silicon wafer
14 cooling chambers
15,16 gate valve
Claims (7)
1. the manufacturing method of bonding wafer supporting substrate, for the method for the supporting substrate in manufacture bonding wafer, the key
Synthetic piece is bonded by active layer with substrate with aforementioned supporting substrate, and the method is characterized in that, is had:
First step, by the oxidation on the surface of the 1st silicon wafer being made of silicon single crystal to be bonded with foregoing active layer with substrate
Film all removes,
Second step, in epitaxially growing equipment, on the surface of aforementioned 1st silicon wafer to be bonded with foregoing active layer with substrate
Upper formation oxidation film, and
Third step forms polysilicon layer on the oxidation film being previously formed.
2. the manufacturing method of bonding wafer supporting substrate according to claim 1, wherein aforementioned second step is aforementioned
It is carried out in the load lock chamber of epitaxially growing equipment.
3. the manufacturing method of bonding wafer supporting substrate according to claim 1 or 2, wherein in aforementioned first process step,
Further remove the silicon layer for aforementioned 1st silicon wafer surface that aforementioned oxide coatings have all removed.
4. the manufacturing method of bonding wafer supporting substrate according to claim 3, wherein the thickness of the aforementioned silicon layer of removing
Degree is 0.5 μm or more.
5. the manufacturing method of bonding wafer supporting substrate according to claim 1 or 2, wherein in aforementioned third step,
The aforementioned oxide coatings of formation with a thickness of 10nm or less.
6. the manufacturing method of bonding wafer supporting substrate according to claim 1 or 2, wherein in aforementioned third step,
Aforementioned polysilicon layer is formed at 900 DEG C of temperature below.
7. the manufacturing method of bonding wafer, which is characterized in that have:
Four steps, the second silicon wafer being made of silicon single crystal as foregoing active layer substrate surface or pass through right
It is required that insulating film is formed on the surface for the aforementioned supporting substrate that any one of 1 ~ 6 method manufactures, and
5th step, via aforementioned polysilicon layer and aforementioned dielectric film, by foregoing active layer substrate and aforementioned supporting substrate key
It closes.
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| JP2019110221A (en) | 2019-07-04 |
| JP6834932B2 (en) | 2021-02-24 |
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