CN109995340B - Cavity type bulk acoustic wave resonator and preparation method thereof - Google Patents
Cavity type bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a cavity type bulk acoustic wave resonator and a preparation method thereof, which are characterized in that: the method comprises the following steps: and taking the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and the substrate with the cavity, bonding one side of the piezoelectric single crystal wafer with the bottom electrode with one side of the substrate with the cavity, carrying out heat treatment on the bonded piezoelectric single crystal wafer to strip the film of the piezoelectric single crystal wafer, and then producing the top electrode on the stripped side of the piezoelectric single crystal wafer. According to the preparation method of the cavity type bulk acoustic wave resonator, a sacrificial layer does not need to be grown, the thin film is not etched and perforated, the mechanical strength of the device is improved, and the thin film is not easily damaged; the cavity structure is formed before film forming, the yield is high, residues left by etching after film forming are avoided, and the influence of incomplete release on devices is not required to be considered.
Description
Technical Field
The invention belongs to the technical field of single crystal thin film devices, and particularly relates to a cavity type bulk acoustic wave resonator and a preparation method thereof.
Background
Film Bulk Acoustic Wave resonators (FBAR), are single crystal thin Film devices. In recent years, with the improvement of the level of processing technology and the rapid development of wireless communication, the film bulk acoustic resonator has been rapidly developed due to its advantages of high Q value (greater than 1000) and compatibility with CMOS process. Which converts electric energy into sound waves by the inverse piezoelectric effect of the piezoelectric film to form resonance. The resonant cavity of the film bulk acoustic resonator takes a piezoelectric film as a support, is a sandwich structure in which the piezoelectric film is clamped between two metal electrodes, and the resonant frequency of the resonator is mainly in inverse proportion to the thickness of the piezoelectric film and is also related to the characteristics and the thickness of other layers of the sandwich structure. The two outer surfaces of the sandwich resonant cavity are both air, so that an ideal total reflection state is met.
At present, the piezoelectric film of the existing film bulk acoustic resonator is mainly deposited on the electrode layer by a deposition mode, and the quality of the film is very dependent on the quality of the lower electrode. The problem with this approach is that: the problems that the piezoelectric single crystal film forms polycrystal, the growth quality of the film is poor, and the crystal axis orientation is difficult to control are caused by the problems that the lattice constant of the electrode material is not matched with that of the piezoelectric single crystal wafer, the surface of the electrode is not flat and the like. These can greatly affect FBAR device performance.
In order to obtain a high-quality piezoelectric film, a wafer bonding transfer method is adopted to prepare the piezoelectric film in the prior art. According to the method, a single crystal wafer material or a wafer material with a high-quality epitaxial piezoelectric layer is selected as a piezoelectric single crystal wafer, high-energy ion implantation is carried out on the piezoelectric single crystal wafer, and then the high-quality piezoelectric film is transferred and prepared on a target substrate by combining a wafer bonding process. The micromachining method of the cavity type film bulk acoustic resonator needs to etch holes from the surface of a film material to corrode a sacrificial layer material under a piezoelectric film, and although a good reflection effect can be obtained, the method needs to prepare the sacrificial layer under the piezoelectric film in advance, and the film is easily damaged and the quality of the film is reduced in the process of etching the holes from the surface of the film material to corrode the sacrificial layer under the piezoelectric film. In addition, corrosion residues may form in the cavity affecting device performance. Therefore, the method for manufacturing the cavity type bulk acoustic wave resonator still remains to be improved.
Disclosure of Invention
The invention provides a cavity type bulk acoustic resonator and a preparation method thereof, and aims to solve the problems that when a cavity type film bulk acoustic resonator is prepared in the prior art, the film quality is low, and corrosion residues can be formed in a cavity.
In order to solve the above problems, the present invention provides a method for manufacturing a cavity type bulk acoustic wave resonator, comprising the steps of:
(1) taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and a substrate with a cavity, and bonding one side of the piezoelectric single crystal wafer with the bottom electrode with one side of the substrate with the cavity;
(2) and (2) carrying out heat treatment on the bonded intermediate product obtained in the step (1) to peel off the film of the piezoelectric single crystal wafer, and then producing a top electrode on the peeled side of the piezoelectric single crystal wafer to obtain the piezoelectric single crystal wafer.
Preferably, in the step (1), bonding the side of the piezoelectric single crystal wafer having the bottom electrode and the side of the substrate having the cavity specifically includes the following steps: coating a bonding object on one side of the piezoelectric single crystal wafer with the bottom electrode, and bonding the piezoelectric single crystal wafer with the substrate with the cavity; wherein the bonding matter is an organic insulating material; the organic insulating material comprises one or more of benzocyclobutene, polyimide, silsesquioxane and spin-on glass; preferably, the thickness of the bond coated is from 100nm to 4000 nm;
or growing a bonding object on one side of the piezoelectric single crystal wafer, which is provided with the bottom electrode, and bonding the bonding object with the substrate provided with the cavity; wherein the bonding material is one or more of silicon oxide, silicon nitride, aluminum oxide and aluminum nitride; preferably, the grown bond has a thickness of 100nm to 4000 nm.
Preferably, the piezoelectric single crystal wafer is one of quartz, lithium niobate, lithium tantalate, aluminum nitride, zinc oxide, barium titanate, potassium dihydrogen phosphate, lead magnesium niobate-lead titanate;
preferably, the ion-implanted piezoelectric single crystal wafer having a bottom electrode is obtained by: and taking a piezoelectric single crystal wafer, performing ion implantation on the piezoelectric single crystal wafer, and growing a bottom electrode on an ion implantation surface to obtain the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with the bottom electrode.
Preferably, the ions implanted into the piezoelectric single crystal wafer are hydrogen ions (preferably monovalent hydrogen ions, H)+) Helium ion (preferably monovalent helium ion, He)+) Boron ion (preferably monovalent, boron ion, B)+) Or arsenic ions (preferably monovalent arsenic ions, As)+) One or more of; the energy of the implanted ions is 100KeV-1000 KeV; the implantation dosage is 2-8 × 1016/cm2(ii) a The ion beam current is 0.1-10 μm/cm-2(ii) a The implantation depth is 0.3-8 μm.
Further preferably, the piezoelectric single crystal wafer is lithium tantalate, and the ions implanted into the piezoelectric single crystal wafer are H ions; the energy of the implanted ions is 150KeV-1000 KeV; the implantation depth is 1.5-8 μm.
Or the piezoelectric single crystal wafer is lithium tantalate, and the ions implanted into the piezoelectric single crystal wafer are As ions; the energy of the implanted ions is
The implantation depth is 0.5-1.8 μm.
Or the piezoelectric single crystal wafer is lithium niobate, and the ions implanted into the piezoelectric single crystal wafer are He ions; the energy of the implanted ions is 150KeV-1000 KeV; the implantation depth is 0.6-2.2 μm.
Or the piezoelectric single crystal wafer is lithium niobate, and the ions implanted into the piezoelectric single crystal wafer are B ions; the energy of the implanted ions is 150KeV-1000 KeV; the implantation depth is 0.3-1 μm.
Preferably, the bottom electrode of the piezoelectric single crystal wafer is grown by the following method: photoetching the surface of the piezoelectric single crystal wafer to form a pattern to be grown, growing an electrode again, and finally washing off redundant parts; or growing electrodes on the surface of the piezoelectric single crystal wafer, preparing a mask, and finally etching off redundant parts;
the electrode material of the growth bottom electrode is one of Al, Au, Mo, Pt and W; the thickness of the bottom electrode is 50-500 nm;
the growth mode of the bottom electrode comprises magnetron sputtering, resistance type evaporation and electron beam deposition.
Preferably, the substrate is made of one or more of silicon, silicon on an insulating layer, glass, quartz, lithium niobate, lithium tantalate, silicon carbide, gallium nitride and gallium arsenide; the substrate with the cavity is obtained by the following method: forming a cavity on the substrate by adopting an etching method; or growing a film on the substrate and forming a cavity on the grown film;
preferably, the cavity depth of the cavity is greater than 100 nm. .
The substrate with the cavity is obtained by the following method: taking a substrate, transferring a pattern to be etched on the substrate, arranging a convex angle compensation part at a convex angle of the pattern, and etching to form a cavity;
alternatively, the substrate having a cavity is obtained by: taking a substrate, growing a support film on the substrate, then carrying out graphical etching on one side of the grown support film, and etching the support film or the support film and the substrate to form a cavity; the support film is made of silicon oxide, silicon nitride, amorphous silicon and metal. Including, but not limited to, aluminum, molybdenum, platinum, gold, chromium, silver, copper, and alloys thereof.
Preferably, the substrate with the cavity is obtained by the following method: taking a substrate, transferring a pattern to be etched on the substrate, cleaning the substrate by adopting a cleaning solution, removing impurities on the surface of the substrate, preparing a mask on the surface of the substrate, and obtaining the pattern of the mask by photoetching, wherein a convex angle supplementing part is arranged at a convex angle of the pattern of the mask; and then, corroding the target position by adopting a wet etching mode to form a cavity.
Preferably, the wet etching specifically includes: etching with etchant at 90 deg.C for 10-60 min; the etching agent is KOH solution with the concentration of 30 percent;
the cleaning solution is one or more of water, acetone, ethanol and hydrogen fluoride.
Preferably, in the step (1), the bonding material is coated by spin coating; the spin coating comprises a low rotating speed stage and a high rotating speed stage; the rotating speed of the low rotating speed stage is 200-800 rpm, and the rotating time is 10-30 s; the rotating speed of the high rotating speed stage is 1000 rpm/s-8000 rpm/s, and the rotating time is 15-60 s;
preferably, the method further comprises the step of pre-baking the piezoelectric single crystal wafer coated with the bonding material in a spinning mode; the pre-drying temperature is 50-120 ℃, and the pre-drying time is 60-600 s.
Preferably, in the step (1), the piezoelectric single crystal wafer which is subjected to ion implantation and has a bottom electrode and the substrate with the cavity are bonded in advance and then bonded; preferably, the prebondingBonding pressure of 1X 105pa～5×106pa, keeping the pressure for 3-30 min; and after pre-bonding, slowly raising the temperature to 150-500 ℃, and keeping the temperature at 200-400 ℃ to completely cure the organic polymer layer to complete bonding.
Preferably, in the step (2), the bonded intermediate product obtained in the step (1) is stripped at 180-400 ℃, and then annealed at 180-400 ℃ for 10-600 min to obtain a stripped film; preferably, the thickness of the piezoelectric single crystal wafer after being stripped is 500-1000 nm.
Preferably, the electrode material of the grown top electrode is one of Al, Au, Mo, Pt and W, and the thickness of the top electrode is 50-300 nm. The growth mode of the top electrode comprises magnetron sputtering, resistance type evaporation and electron beam deposition.
The cavity type bulk acoustic wave resonator provided by the invention is prepared by the preparation method of the cavity type bulk acoustic wave resonator.
Preferably, the cavity type bulk acoustic wave resonator comprises a top electrode, a piezoelectric film, a bottom electrode, a bonding layer and a substrate which are arranged in sequence from top to bottom, wherein a cavity is arranged on the substrate; preferably, the bonding layer has a thickness of 2-6 μm.
Compared with the prior art, the invention has the advantages and beneficial effects that:
1. according to the preparation method of the cavity type bulk acoustic wave resonator, the substrate is provided with the cavity before bonding, the cavity is arranged below the injection surface, a sacrificial layer does not need to be grown firstly, and then the piezoelectric film layer or the lower electrode or the upper electrode is punched to release the sacrificial layer, so that the complexity of the process is greatly reduced, the film is not etched and perforated, the mechanical strength of the device is improved, the film is not easily damaged, and the quality of the film is not influenced; the cavity structure is formed before film forming, the yield is high, residues left by etching after film forming are avoided, influence on devices caused by incomplete release is not needed to be considered, the Q value of the resonator is greatly improved, and clutter of the resonator is reduced. The method can realize the growth of high-quality monocrystalline oxide films on the metal bottom electrode, and prepare the monocrystalline film device by using a film stripping method. The invention can be a silicon substrate of any crystal orientation or any other commonly used substrate.
2. According to the preparation method of the cavity type bulk acoustic wave resonator, the upper surface of the substrate is subjected to patterned etching to form the shallow cavity, compared with the reverse-side etched substrate, the etching depth is greatly reduced, and the etching time is shortened.
3. According to the preparation method of the cavity type bulk acoustic wave resonator, the organic polymer is used as a bonding object during bonding, so that the bonding effect can be achieved, the problem that the bonding surface is not flat during bonding can be solved by using the organic polymer as the bonding object, and the support can be provided for the thin film layer.
Drawings
Fig. 1 is a schematic structural view of a substrate having a cavity obtained in step (a) of the method for manufacturing a cavity type bulk acoustic wave resonator in embodiment 1 of the present invention;
fig. 2 is a schematic structural view of a substrate having a cavity obtained in step (a) of the method for manufacturing a cavity type bulk acoustic wave resonator in embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of the ion-implanted piezoelectric single crystal wafer having a bottom electrode obtained in step (b) of the method for manufacturing a cavity bulk acoustic resonator in embodiment 1 of the present invention;
fig. 4 is a schematic structural diagram of the piezoelectric single crystal wafer after a bonding material is coated on the side having the bottom electrode in step (c) of the method for manufacturing the cavity bulk acoustic wave resonator in embodiment 1 of the present invention;
fig. 5 is a schematic structural view of an intermediate product after bonding in step (c) of the method for manufacturing a cavity type bulk acoustic wave resonator in embodiment 1 of the present invention;
fig. 6 is a schematic structural view of the peeling film in step (d) of the method for manufacturing a cavity type bulk acoustic wave resonator in embodiment 1 of the present invention;
fig. 7 is a schematic structural view of the cavity type bulk acoustic wave resonator in step (d) of the method for manufacturing the cavity type bulk acoustic wave resonator in embodiment 1 of the present invention;
fig. 8 is a schematic structural diagram of the ion-implanted piezoelectric single crystal wafer having a bottom electrode obtained in step (b) of the method for manufacturing a cavity bulk acoustic resonator in embodiment 3 of the present invention.
Fig. 9 is a schematic structural diagram of a piezoelectric single crystal wafer after a bonding material is coated on the side having the bottom electrode in step (c) of the method for manufacturing a cavity bulk acoustic wave resonator in embodiment 3 of the present invention;
fig. 10 is a schematic structural view of the cavity type bulk acoustic wave resonator in step (d) of the method for manufacturing the cavity type bulk acoustic wave resonator in embodiment 3 of the present invention;
fig. 11 is a schematic structural view of the convex angle compensation portion in step (a) of the method for manufacturing a cavity bulk acoustic wave resonator in embodiment 1 of the present invention.
Reference numeral, 1-substrate; 2-a cavity; 3-supporting the membrane; 4-a piezoelectric single crystal wafer; 5-ion damage layer; 6-injection surface; 7-bottom electrode; 8-a bonding layer; 9-top electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the examples of the present invention, those who do not specify specific conditions are performed according to conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available. The implementation of the technical scheme and the realization of the technical effect are not influenced by the raw materials of different manufacturers and models.
Example 1
The preparation method of the cavity type bulk acoustic wave resonator of the embodiment comprises the following steps:
(a) taking a substrate, wherein the substrate is monocrystalline silicon; a silicon anisotropic etching method is adopted to form a cavity layer for preventing heat flow diffusion in monocrystalline silicon, and the method specifically comprises the following steps: transferring a pattern to be etched on the substrate, preparing a mask on the surface of the substrate, arranging a convex angle compensation part at a convex angle of the pattern of the mask, and performing wet etching, wherein in the etching process, the part of the substrate covered by the mask is reserved, and the part not covered by the mask is etched to form a cavity; the wet etching can be used for carrying out single crystal silicon anisotropic etching, and when the single crystal silicon is etched by adopting the wet etching, the etching solution has the fastest etching rate to the single crystal silicon below the 'convex angle' structure in the mask pattern, so that as shown in fig. 11, a convex angle compensation part is arranged through the pattern design of etching, and the 'convex angle' can be compensated, so that the compensated structure is closer to or equal to the designed structure; as shown in fig. 1, is a schematic structural diagram of the substrate with the cavity obtained in step (a).
As a preferred implementation manner of this embodiment, a pattern to be etched is transferred on the substrate, the substrate is cleaned by using a cleaning solution to remove impurities on the surface of the substrate, a photoresist is spin-coated on the surface of the substrate to serve as a mask, a pattern of the mask is obtained by photolithography, and a convex angle supplement portion is arranged at a convex angle of the pattern of the mask; then, corroding the target position by adopting a wet etching mode to form a cavity, wherein the depth of the cavity is 3000nm, and the position of the cavity is a cavity layer; after the target position of the substrate is corroded, removing impurities on the surface of the substrate by using the cleaning solution to obtain a substrate with a cavity;
as a preferred implementation manner of this embodiment, the cleaning solution is one or more of water, acetone, ethanol, and hydrogen fluoride; in this embodiment, the substrate is cleaned with acetone and ethanol solutions respectively to remove impurities on the surface, and then rinsed with deionized water, and then immersed in hydrogen fluoride with a concentration of 15 w% for 20min to remove an oxide layer, and finally rinsed with deionized water repeatedly.
The wet etching specifically comprises the following steps: etching with etchant at 90 deg.C for 30 min; the etchant is a 30 wt% KOH solution.
(b) Taking a piezoelectric single crystal wafer, theThe piezoelectric monocrystal wafer is a lithium tantalate wafer, ion implantation is performed on the piezoelectric monocrystal wafer to form an ion damage layer, the implanted ions are H ions, the energy of the implanted ions is 195KeV, and the implantation dosage is 6 multiplied by 1016/cm2The ion beam current is 1 mu m/cm-2The implantation depth is 6 microns to obtain a pyroelectric material, then, photoetching is carried out on the implantation surface of the obtained pyroelectric material to form a pattern to be grown, then, magnetron sputtering is utilized to grow an electrode, the electrode material is Au, and finally, the redundant part is washed away by acetone, so that the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode can be obtained, wherein the thickness of the bottom electrode is 100 nm; as shown in fig. 3, the structure of the ion-implanted piezoelectric single crystal wafer with a bottom electrode obtained in step (b) is schematically illustrated.
(c) Taking the substrate with the cavity obtained in the step (a) and the piezoelectric single crystal wafer which is subjected to ion implantation and has the bottom electrode obtained in the step (b), coating a bonding object on one side of the piezoelectric single crystal wafer with the bottom electrode to form a bonding layer, and bonding the bonding layer with the substrate with the cavity to obtain a bonded intermediate product; fig. 4 is a schematic structural diagram of the piezoelectric single crystal wafer in step (c) after the side with the bottom electrode is coated with the bonding material. FIG. 5 is a schematic structural diagram of the bonded intermediate product in step (c).
Among them, as a preferred implementation of this embodiment: the bonding object is benzocyclobutene, and the thickness of the bonding layer is 4 microns; the bonding object is coated by means of spin coating; the spin coating comprises a low rotating speed stage and a high rotating speed stage; the rotating speed of the low rotating speed stage is 800rpm/s, and the rotating time is 10 s; the rotating speed of the high rotating speed stage is 3000rpm/s, and the rotating time is 30 s;
as a preferred implementation manner of this embodiment, the single crystal wafer spin-coated with the organic polymer layer is placed in an oven for pre-baking, the pre-baking temperature is 100 ℃, and the pre-baking time is 4 min.
As a preferred implementation manner of this embodiment, the bonding specifically includes the following steps: firstly, the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with the bottom electrode and the piezoelectric single crystal wafer with the cavity structureThe substrate is placed in a bonding machine or a tube furnace for pre-bonding, and the bonding pressure of the pre-bonding is 4 multiplied by 105pa, keeping the pressure for 30 min; and then, slowly raising the temperature to 200 ℃, keeping the temperature at 200 ℃ for 2h, completely curing the organic polymer layer, and completing bonding to obtain a bonded intermediate product.
(d) And (c) annealing the bonded intermediate product obtained in the step (c) at 350 ℃ for 2h to strip the film, wherein the stripped film can recover the crystal lattice damage caused by ion implantation in the annealing process, so that the stripped film is obtained, and as shown in fig. 6, the stripped film is a schematic structural diagram in the step (d). Preparing a patterned metal top electrode on the surface of the stripped film by using electron beam evaporation or magnetron sputtering to obtain a cavity type bulk acoustic wave resonator; the electrode material of the top electrode is Al, and the thickness of the electrode is 100 nm. Fig. 8 is a schematic structural diagram of the cavity type bulk acoustic wave resonator in step (d) of the method for manufacturing the cavity type bulk acoustic wave resonator in embodiment 1 of the present invention.
As a preferred implementation manner of the embodiment, the method further comprises the step of bombarding the obtained stripping film: adopting argon ion bombardment to obtain a stripping film, and reducing the roughness of the stripping film to 4 nm; the argon ion beam current voltage is 400V, and the beam current is 20 mA; the accelerating voltage is 60v, the accelerating current is 15mA, and the processing time is 10 min.
The cavity type bulk acoustic wave resonator prepared by the embodiment includes a top electrode, a piezoelectric film, a bottom electrode, a bonding layer and a substrate which are sequentially arranged from top to bottom. The cavity is arranged on the substrate; the piezoelectric film is the peeled film. The upper surface area of the bottom electrode of the cavity type bulk acoustic resonator prepared in this embodiment is smaller than the upper surface area of the cavity.
Example 2
The preparation method of the cavity type bulk acoustic wave resonator of the embodiment comprises the following steps:
(a) taking a substrate, wherein the substrate is monocrystalline silicon; growing a support film on the substrate, then carrying out graphical etching on one side of the grown support film, and etching the support filmForming a cavity; the support film is SiO2. Fig. 2 is a schematic structural diagram of the substrate with a cavity obtained in step (a).
As an alternative implementation of this embodiment, the supporting surface and the substrate may also be etched.
(b) Taking a piezoelectric monocrystal wafer, wherein the piezoelectric monocrystal wafer is a lithium tantalate wafer, performing ion implantation on the piezoelectric monocrystal wafer, the implanted ions are H ions, the energy of the implanted ions is 195KeV, and the implantation dose is 6 multiplied by 1016/cm2The ion beam current is 1 mu m/cm-2The implantation depth is 6 microns to obtain a pyroelectric material, then, an electrode is grown on the implantation surface of the obtained pyroelectric material by magnetron sputtering, the electrode material is Au, a mask is prepared, and finally, the redundant part is etched away, so that the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode is obtained, wherein the thickness of the bottom electrode is 100 nm;
(c) taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and a substrate with a cavity, growing a bonding object on one side of the piezoelectric single crystal wafer, which is provided with the bottom electrode, and bonding the bonding object with the substrate with the cavity; wherein the bonding substance is SiO2Or Si3N4One or more of;
as a preferred implementation manner of this embodiment, the bonding specifically includes the following steps: firstly, placing the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with the bottom electrode and the substrate with the cavity structure into a bonding machine or a tube furnace for pre-bonding, wherein the bonding pressure of the pre-bonding is 4 multiplied by 105pa, keeping the pressure for 30 min; and then, slowly raising the temperature to 200 ℃, keeping the temperature at 200 ℃ for 2h, completely curing the organic polymer layer, and completing bonding to obtain a bonded intermediate product.
(d) And (c) annealing the bonded intermediate product obtained in the step (c) at 350 ℃ for 2h to strip the film, wherein the stripped film can recover the lattice damage caused by ion implantation in the annealing process, so that the stripped film is obtained. And preparing a patterned metal top electrode on the surface of the stripped film by electron beam evaporation or magnetron sputtering, wherein the electrode material of the top electrode is Al, and the thickness of the electrode is 100 nm.
The cavity type bulk acoustic wave resonator prepared by the embodiment includes a top electrode, a piezoelectric film, a bottom electrode, a bonding layer and a substrate which are sequentially arranged from top to bottom. The cavity is arranged on the substrate; the piezoelectric film is the peeled film.
Example 3
The method for manufacturing the cavity type bulk acoustic wave resonator of the present embodiment is exactly the same as that of embodiment 1, except that: the upper surface area of the bottom electrode is larger than the upper surface area of the cavity.
Fig. 8 is a schematic structural diagram of the ion-implanted piezoelectric single crystal wafer with a bottom electrode obtained in step (b).
Fig. 9 is a schematic structural diagram of the piezoelectric single crystal wafer in step (c) after the side with the bottom electrode is coated with a bonding material;
fig. 10 is a schematic structural diagram of the cavity type bulk acoustic wave resonator in step (d) of the method for manufacturing the cavity type bulk acoustic wave resonator in embodiment 3 of the present invention.
Example 4
The preparation method of the cavity type bulk acoustic wave resonator of the embodiment comprises the following steps:
(1) taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and a substrate with a cavity, coating a bonding object on one side of the piezoelectric single crystal wafer with the bottom electrode, and bonding the piezoelectric single crystal wafer with the substrate with the cavity; wherein the bonding matter is an organic insulating material; the organic insulating material comprises one or more of benzocyclobutene and polyimide; the bond applied was 4 μm thick;
(2) and (2) carrying out heat treatment on the bonded intermediate product obtained in the step (1) to peel off the film of the piezoelectric single crystal wafer, and growing a top electrode on the peeled side of the piezoelectric single crystal wafer to obtain the piezoelectric single crystal wafer.
Example 5
The preparation method of the cavity type bulk acoustic wave resonator of the embodiment comprises the following steps:
(1) taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and a substrate with a cavity, growing a bonding object on one side of the piezoelectric single crystal wafer, which is provided with the bottom electrode, and bonding the bonding object with the substrate with the cavity; wherein the bonding substance is SiO2Or Si3N4One or more of;
(2) and (2) carrying out heat treatment on the bonded intermediate product obtained in the step (1) to peel off the film of the piezoelectric single crystal wafer, and growing a top electrode on the peeled side of the piezoelectric single crystal wafer to obtain the piezoelectric single crystal wafer.
Comparative example 1
The method for manufacturing a cavity type bulk acoustic wave resonator of this comparative example, which was manufactured under the same conditions and by the same method as in example 1, differs only in that the substrate having the cavity was replaced with the substrate having the sacrificial layer, and specifically includes the following steps:
taking a substrate, growing a sacrificial layer on the substrate, wherein the sacrificial layer is amorphous silicon, taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode, growing a bonding object on one side of the piezoelectric single crystal wafer, which is provided with the bottom electrode, bonding the bonding object with the substrate provided with the sacrificial layer, and stripping the bonding object to obtain the piezoelectric film. Then, etching an opening on the upper surface of the piezoelectric single crystal wafer, and introducing XeF through the etched opening2And etching the amorphous silicon sacrificial layer by using gas to form a cavity so as to obtain the cavity type bulk acoustic wave resonator.
Examples of Effect test
In order to verify the technical effects of the method for manufacturing a single crystal thin film device having a cavity structure according to the present invention, the following comparative test tests were performed using the single crystal thin films manufactured in examples 1 to 5 and comparative example 1, respectively.
Respectively taking the single crystal thin film devices with the cavity structures prepared in the embodiments 1-5 and the comparative example 1, carrying out signal test on the devices, and testing the yield, the inductance Q value and the clutter number of the resonator;
through the above experiment, the obtained experimental data are as follows:
| group of | Yield of finished products | Q value | Number of clutter |
| Example 1 | 99％ | 2300 | Is free of |
| Example 2 | 99％ | 3000 | Is free of |
| Example 3 | 99％ | 2000 | Is free of |
| Example 4 | 99％ | 1900 | Is free of |
| Example 5 | 99％ | 2500 | Small amount of |
| Comparative example 1 | 76％ | 300 | Multiple purpose |
From the above experimental results, it can be seen that: according to the preparation method of the single crystal thin film device with the cavity structure, the prepared single crystal thin film device with the cavity structure is improved in mechanical strength, and the thin film is not easily damaged by etching, so that the quality of the thin film is not influenced; the cavity structure is formed before film forming, the yield is high, residues left by etching after film forming can be avoided, a high-quality monocrystalline oxide film can be grown on the polycrystalline metal bottom electrode, and a monocrystalline film device is prepared by a film stripping method. In example 2, the Q value of the single crystal film bonded with silicon dioxide as the bonding material was better than that of the single crystal film bonded with benzocyclobutene as the bonding material in example 1.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.
Claims (11)
1. A method for preparing a cavity type bulk acoustic wave resonator is characterized by comprising the following steps:
(1) taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and a substrate with a cavity, and bonding one side of the piezoelectric single crystal wafer with the bottom electrode with one side of the substrate with the cavity;
(2) carrying out heat treatment on the bonded intermediate product obtained in the step (1) to peel off the film of the piezoelectric single crystal wafer, and then producing a top electrode on the peeled side of the piezoelectric single crystal wafer to obtain the piezoelectric single crystal wafer;
in the step (1), bonding the side of the piezoelectric single crystal wafer having the bottom electrode and the side of the substrate having the cavity specifically includes the following steps:
growing a bonding object on one side of the piezoelectric single crystal wafer, which is provided with a bottom electrode, and bonding the bonding object with a substrate provided with a cavity; wherein the bonding material is silicon oxide.
2. A method for fabricating a cavity bulk acoustic resonator according to claim 1, wherein the grown bond has a thickness of 100nm to 4000 nm.
3. A method for manufacturing a cavity type bulk acoustic wave resonator as defined in claim 1 or 2,
the piezoelectric single crystal wafer is one of quartz, lithium niobate, lithium tantalate, aluminum nitride, zinc oxide, barium titanate, potassium dihydrogen phosphate and lead magnesium niobate-lead titanate;
the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode is obtained by the following method: and taking a piezoelectric single crystal wafer, performing ion implantation on the piezoelectric single crystal wafer, and growing a bottom electrode on an ion implantation surface to obtain the piezoelectric single crystal wafer which is subjected to ion implantation and is provided with the bottom electrode.
4. A method for manufacturing a cavity bulk acoustic resonator as defined in claim 3,
the ions implanted into the piezoelectric single crystal wafer are one or more of hydrogen ions, helium ions, boron ions or arsenic ions; the energy of the implanted ions is 100KeV-1000 KeV; the implantation dosage is 2-8 × 1016/cm2(ii) a The ion beam current is 0.1-10 μm/cm-2(ii) a The injection depth is 0.3-8 μm;
wherein the hydrogen ion is monovalent hydrogen ion H+The helium ion is monovalent helium ion He+The boron ion is a monovalent boron ion B+The arsenic ion is monovalent arsenic ion As+。
5. A method for manufacturing a cavity bulk acoustic resonator as defined in claim 4,
the bottom electrode of the piezoelectric single crystal wafer is grown by the following method: photoetching the surface of the piezoelectric single crystal wafer to form a pattern to be grown, growing an electrode again, and finally washing off redundant parts; or growing electrodes on the surface of the piezoelectric single crystal wafer, preparing a mask, and finally etching off redundant parts;
the electrode material of the growth bottom electrode is one of Al, Au, Mo, Pt and W; the thickness of the bottom electrode is 50-500 nm;
the growth mode of the bottom electrode comprises magnetron sputtering, resistance type evaporation and electron beam deposition.
6. A method for manufacturing a cavity bulk acoustic resonator as defined in claim 1,
the substrate is made of one or more of silicon, silicon on an insulating layer, glass, quartz, lithium niobate, lithium tantalate, silicon carbide, gallium nitride and gallium arsenide; the substrate with the cavity is obtained by the following method: forming a cavity on the substrate by adopting an etching method; or growing a film on the substrate and forming a cavity on the grown film;
the cavity depth of the cavity is larger than 100 nm.
7. A method for manufacturing a cavity type bulk acoustic resonator according to claim 6, wherein the substrate having a cavity is obtained by: taking a substrate, transferring a mask pattern to be etched on the substrate, arranging a convex angle compensation part at a convex angle of the pattern, and etching to form a cavity;
alternatively, the substrate having a cavity is obtained by: taking a substrate, growing a support film on the substrate, then carrying out graphical etching on one side of the grown support film, and etching the support film or the support film and the substrate to form a cavity; the support film is made of silicon oxide, silicon nitride, amorphous silicon and metal;
alternatively, the substrate having a cavity is obtained by: taking a substrate, transferring a pattern to be etched on the substrate, cleaning the substrate by adopting a cleaning solution, removing impurities on the surface of the substrate, preparing a mask on the surface of the substrate, and obtaining the pattern of the mask by photoetching, wherein a convex angle supplementing part is arranged at a convex angle of the pattern of the mask; and then, corroding the target position by adopting a wet etching mode to form a cavity.
8. A method for manufacturing a cavity bulk acoustic resonator as defined in claim 1,
in the step (1), the bonding object is coated in a spin coating mode; the spin coating comprises a low rotating speed stage and a high rotating speed stage; the rotating speed of the low rotating speed stage is 200-800 rpm/s, and the rotating time is 10-30 s; the rotating speed of the high rotating speed stage is 1000 rpm/s-8000 rpm/s, and the rotating time is 15 s-60 s;
the method also comprises the step of pre-baking the piezoelectric single crystal wafer coated with the bonding object in a spinning mode; the pre-drying temperature is 50-120 ℃, and the pre-drying time is 60-600 s;
in the step (1), firstly, pre-bonding a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode and a substrate with a cavity, and then bonding; bonding pressure of the prebonding is 1 × 105pa~5×106pa, keeping the pressure for 3-30 min; and after pre-bonding, slowly raising the temperature to 150-500 ℃, and keeping the temperature at 150-500 ℃ to completely cure the bonded object to complete bonding.
9. A preparation method of a cavity type bulk acoustic wave resonator according to claim 8, wherein in the step (2), the bonded intermediate product obtained in the step (1) is subjected to film peeling at 180-400 ℃, and then is annealed at 180-400 ℃ for 10-600 min to obtain a peeled film; the thickness of the piezoelectric single crystal wafer after being stripped is 500-1000 nm;
the grown top electrode is made of one of Al, Au, Mo, Pt and W, and the thickness of the top electrode is 50-300 nm.
10. A cavity type bulk acoustic resonator, characterized by being prepared by the method for preparing a cavity type bulk acoustic resonator according to any one of claims 1 to 9.
11. A cavity type bulk acoustic resonator according to claim 10, comprising a top electrode, a piezoelectric film, a bottom electrode, a bonding layer and a substrate arranged in this order from top to bottom, wherein the substrate is provided with a cavity; the thickness of the bonding layer is 2-6 μm.
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| CN111030628A (en) * | 2019-11-25 | 2020-04-17 | 南方科技大学 | Method for preparing bulk acoustic wave resonator |
| CN111337166A (en) * | 2020-03-25 | 2020-06-26 | 电子科技大学 | Preparation method of novel absolute pressure surface acoustic wave pressure sensor |
| CN111817681A (en) * | 2020-06-29 | 2020-10-23 | 中国科学院上海微系统与信息技术研究所 | Preparation method of film bulk acoustic resonator |
| CN115051673A (en) * | 2021-03-08 | 2022-09-13 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
| CN114362705B (en) * | 2021-12-03 | 2024-04-02 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator and preparation method thereof |
| CN114214732B (en) * | 2022-02-22 | 2022-04-29 | 济南晶正电子科技有限公司 | Method for improving polarization reversal phenomenon on surface of composite film and composite film |
| CN114894229B (en) * | 2022-04-26 | 2024-05-03 | 武汉敏声新技术有限公司 | Film bulk acoustic wave sensor and preparation method thereof |
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