CN111030628A - Method for preparing bulk acoustic wave resonator - Google Patents
Method for preparing bulk acoustic wave resonator Download PDFInfo
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- CN111030628A CN111030628A CN201911166647.0A CN201911166647A CN111030628A CN 111030628 A CN111030628 A CN 111030628A CN 201911166647 A CN201911166647 A CN 201911166647A CN 111030628 A CN111030628 A CN 111030628A
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 163
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 238000000059 patterning Methods 0.000 claims abstract description 13
- 238000005468 ion implantation Methods 0.000 claims abstract description 12
- 230000002950 deficient Effects 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 19
- 230000007547 defect Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 230000002411 adverse Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The embodiment of the invention discloses a preparation method of a bulk acoustic wave resonator, which comprises the following steps: providing a piezoelectric substrate, and performing ion implantation on the piezoelectric substrate to form a first substrate and a second substrate which are connected by a defective layer; forming a metal electrode on the first substrate, and patterning the metal electrode to form a bottom electrode; bonding one surface of a piezoelectric substrate with a bottom electrode to a support substrate with a preset cavity, wherein the bottom electrodes are all positioned in the cavity; peeling off the second substrate of the piezoelectric substrate; thinning the first substrate to a required thickness; a top electrode is formed on a side of the first substrate remote from the bottom electrode. The method solves the problems of adverse effect on the resonator structure in the process of forming the bottom cavity in the conventional process and difficulty in bonding the metal and the supporting substrate in the conventional process, reduces the process fault tolerance, reduces the process steps and the process cost, and ensures the working characteristics of the device.
Description
Technical Field
The embodiment of the invention relates to the technical field of resonators, in particular to a method for preparing a bulk acoustic wave resonator.
Background
The piezoelectric film of the bulk acoustic wave filter on the market at present mainly adopts an aluminum nitride film material prepared by a vacuum sputtering method. However, the aluminum nitride material has a low electromechanical coupling coefficient and a low Q value, and cannot meet the requirements of a 5G band-pass filter on high frequency, large bandwidth and low loss, and related materials and technical problems still need to be solved. Theoretical research shows that the electromechanical coupling coefficient of the lithium niobate film is higher. For example, the coupling coefficient of the X tangential lithium niobate thin film can reach 45 percent at most and is far higher than 8 percent of that of the aluminum nitride thin film. Accordingly, the relative bandwidth of the filters made from lithium niobate films is over 20%, which is 6 times the relative bandwidth of the aluminum nitride based film filters.
However, the process of the bulk acoustic wave resonator based on the lithium niobate thin film has been difficult due to the metal and Si or SiO2The bonding difficulty exists between the supporting layers; on the other hand, during the process of etching to form the bottom cavity, the problems of insufficient etching, excessive etching and the like often exist, the resonator is often damaged, the performance of the resonator is reduced, and the process cost is increased in the etching step; or a sacrificial layer is formed in the cavity, then the bottom electrode is formed on the sacrificial layer, and the sacrificial layer is removed by using an etchant after the sample is bonded through thermal decomposition or a release hole is formed, so that the cavity is formed.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a bulk acoustic wave resonator, which solves the problems that metal and a supporting substrate are difficult to bond in the conventional process and the resonator structure is adversely affected in the process of forming a bottom cavity in the conventional process, reduces the process fault tolerance, reduces the process steps and the process cost, and ensures the working characteristics of devices.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a bulk acoustic wave resonator, where the method includes:
providing a piezoelectric substrate, and performing ion implantation on the piezoelectric substrate to form a first substrate and a second substrate which are connected by a defective layer;
forming a metal electrode on the first substrate, and patterning the metal electrode to form a bottom electrode; bonding one surface of the piezoelectric substrate with the bottom electrodes to a support substrate with a preset cavity, wherein the bottom electrodes are all positioned in the cavity;
peeling off the second substrate of the piezoelectric substrate;
thinning the first substrate to a required thickness;
and forming a top electrode on one surface of the first substrate far away from the bottom electrode.
Optionally, the forming the first substrate and the second substrate with a defect layer connection by performing ion implantation on the piezoelectric substrate includes:
performing He to the piezoelectric substrate+Ion implantation; to form defects within the piezoelectric substrate; the defect is close to the implantation surface.
Optionally, the piezoelectric substrate is made of lithium niobate or lithium tantalate.
Optionally, the patterning the metal electrode to form a bottom electrode includes:
etching the redundant metal electrode to form a flat electrode in a graphical mode; alternatively, the first and second electrodes may be,
and etching the redundant part of the metal electrode to form an interdigital electrode by patterning.
Optionally, the bottom electrode is made of Al, Mo, Au, Ag, Ni, Pt, or Cu.
Optionally, the supporting substrate is made of Si or has a layer of SiO on the surface thereof2A film.
Optionally, the peeling the second substrate of the piezoelectric substrate includes:
carrying out heat treatment on the bonded sample; so that the defect layer is automatically fractured;
peeling off the second substrate of the piezoelectric substrate.
Optionally, the thinning the first substrate to a desired thickness includes:
and thinning and polishing one surface of the first substrate far away from the bottom electrode in a chemical mechanical grinding mode, wherein the thickness range of the thinned first substrate is 400 nm-2000 nm.
Optionally, the forming a top electrode on a side of the first substrate away from the bottom electrode includes:
forming a top electrode on one side of the piezoelectric substrate far away from the bottom electrode by a deposition and etching method; the top electrode is an interdigitated electrode and is aligned with the bottom electrode.
Optionally, the top electrode is made of Al, Mo, Au, Ag, Ni, Pt, or Cu.
The embodiment of the invention provides a preparation method of a bulk acoustic wave resonator, which comprises the following steps: providing a piezoelectric substrate, and performing ion implantation on the piezoelectric substrate to form a first substrate and a second substrate which are connected by a defective layer; forming a metal electrode on the first substrate, and patterning the metal electrode to form a bottom electrode; bonding one surface of the piezoelectric substrate with the bottom electrodes to a support substrate with a preset cavity, wherein the bottom electrodes are all positioned in the cavity; peeling off the second substrate of the piezoelectric substrate; thinning the first substrate to a required thickness; and forming a top electrode on one surface of the first substrate far away from the bottom electrode. The bottom electrode is formed on the piezoelectric substrate and then bonded with the supporting substrate with the preset cavity, so that the problem of adverse effect on a resonator structure in the process of forming the bottom cavity in the conventional process is solved, the patterning of the bottom electrode is favorable for bonding the lithium niobate and the supporting layer, the difficulty in bonding the metal and the supporting substrate in the conventional process is overcome, the process fault tolerance is reduced, the process steps and the process cost are reduced, and the working characteristics of the device are ensured.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention;
fig. 2A to 2F are sectional views of structures of steps in a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the present invention provides a method for manufacturing a bulk acoustic wave resonator, and referring to fig. 1, fig. 1 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention, and with reference to fig. 2A to 2F, fig. 2A to 2F are sectional views of structures of steps in the method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention, and the method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention includes:
and S10, providing a piezoelectric substrate, and performing ion implantation on the piezoelectric substrate to form a first substrate and a second substrate which are connected by a defect layer.
Specifically, referring to fig. 2A, a defect layer 2 is formed by implanting ions into a certain depth of the surface of the piezoelectric substrate 1, and the defect layer 2 divides the piezoelectric substrate 1 into two parts, namely, a first substrate 11 and a second substrate 12.
Alternatively, forming the first substrate 11 and the second substrate 12 connected with the defect layer 2 by performing ion implantation on the piezoelectric substrate 1 includes:
he to the piezoelectric substrate 1+Ion implantation; to form defects in the piezoelectric substrate 1; the defect is close to the implantation surface.
Specifically, the ion implanted into the piezoelectric substrate 1 is He+Ions, He+The damage of ions to the piezoelectric substrate 1 is small, only one layer of defect is formed near the implantation surface, He is implanted into the surface of the first substrate 11 in the embodiment+And forming a defect layer 2, wherein the defect layer 2 is connected with the first substrate 11 and the second substrate 12, and the thickness of the first substrate 11 is smaller than that of the second substrate 12.
Optionally, the material of the piezoelectric substrate 1 is lithium niobate or lithium tantalate.
Specifically, the lithium niobate or lithium tantalate has high electromechanical coupling coefficient, and has the advantages of stable mechanical property, high temperature resistance, corrosion resistance, easy processing, low cost and the like.
S20, forming a metal electrode on the first substrate, and patterning the metal electrode to form a bottom electrode; a piezoelectric substrate having bottom electrodes is bonded on one surface to a support substrate having a pre-formed cavity, the bottom electrodes being located in the cavity.
Specifically, referring to fig. 2B, a layer of metal electrode 13 is formed on the first substrate 11, referring to fig. 2C, the metal electrode is patterned to form a bottom electrode 3, the metal of the ineffective region is removed, the piezoelectric substrate 1 with the bottom electrode 3 is formed, referring to fig. 2D, one surface of the piezoelectric substrate 1 with the bottom electrode 3 is bonded to the supporting substrate 4 with the preset cavity 5, the supporting substrate 4 is directly bonded to the piezoelectric substrate 1 with the metal of the ineffective region removed, and after bonding, the bottom electrode 3 is located in the preset cavity 5; removing the metal in the invalid region to expose the first substrate 11, wherein the material of the first substrate 11 is lithium niobate or lithium tantalate, the material of the support substrate 4 is Si, or a layer of SiO is arranged on the surface of the support substrate2Thin film, Si or SiO2The bonding with lithium niobate or lithium tantalate is easy, and the bonding with metal is not easy, so that the supporting substrate 4 is in contact bonding with the first substrate 11, and the problem of difficult bonding between metal and the supporting substrate in the conventional process is solved; the conventional process comprises two methods for forming the bottom cavity, wherein one method is an etching method for forming the bottom cavity, and the method often has the problems of insufficient etching, excessive etching and the like, and often damages the resonator to reduce the performance of the resonator; in another method, a sacrificial layer is formed in the cavity, a bottom electrode is formed on the sacrificial layer, and the sacrificial layer is removed by thermal decomposition or an etchant after a release hole is formed after bonding of the sample, so that the cavity is formed. In the present embodiment, the cavity is preset in advance by the supporting substrate 4, thereby overcoming the problem of adverse effect on the resonator structure in the process of forming the bottom cavity in the conventional process.
Optionally, the patterned metal electrode 13 forms the bottom electrode 3, including:
etching the redundant metal electrode 13 to form a flat electrode in a patterning way; alternatively, the first and second electrodes may be,
and etching the redundant metal electrode 13 to form an interdigital electrode by patterning.
Specifically, the metal in the inactive area is removed, and the metal in the remaining active area is patterned to form a plate electrode or an interdigital electrode, for example, referring to fig. 2C, the bottom electrode 3 is an interdigital pattern. The interdigital electrode refers to an electrode in a periodic pattern such as a finger or a comb, and the electromechanical coupling coefficient is increased, so that the bandwidth of the bulk acoustic wave resonator is increased.
Optionally, the bottom electrode 3 is made of Al, Mo, Au, Ag, Ni, Pt, or Cu.
Optionally, the supporting substrate 4 is made of Si or has a layer of SiO on the surface thereof2A film.
And S30, peeling the second substrate of the piezoelectric substrate.
Specifically, referring to fig. 2E, the second substrate 12 of the piezoelectric substrate 1 is peeled off to leave the first substrate 11 having a smaller occupied space, so that the original piezoelectric substrate 1 is thinned, and a piezoelectric substrate film is formed.
Optionally, the peeling the second substrate 12 of the piezoelectric substrate 1 includes:
carrying out heat treatment on the bonded sample; so that the defective layer 2 is automatically fractured;
the second substrate 12 of the piezoelectric substrate 1 is peeled off.
Specifically, the bonded sample is subjected to heat treatment, and after the heat treatment, the defective layer 2 is automatically cracked, the second substrate 12 is detached from the entire piezoelectric substrate 1, and only the first substrate 11 bonded to the support substrate 4 remains.
And S40, thinning the first substrate to a required thickness.
Specifically, the first substrate 11 is thinned to a desired thickness from the side of the first substrate 11 away from the bottom piezoelectric 3.
Optionally, thinning the first substrate 11 to a desired thickness comprises:
and thinning and polishing one surface of the first substrate 11 far away from the bottom electrode 3 in a chemical mechanical grinding mode, wherein the thickness range of the thinned first substrate 11 is 400 nm-2000 nm.
Specifically, the principle of the chemical mechanical polishing is a processing technology combining a chemical corrosion effect and a mechanical removal effect, and the chemical mechanical polishing is the only technology capable of realizing global surface planarization in the current mechanical processing; the method can obtain a perfect surface while ensuring the material removal efficiency, and the flatness can realize the surface roughness from nano level to atomic level; and thinning and polishing one surface of the first substrate 11 far away from the bottom electrode 3 in a chemical mechanical grinding mode to a range of 400 nm-2000 nm, namely the required thickness.
S50, forming a top electrode on a side of the first substrate remote from the bottom electrode.
Alternatively, referring to fig. 2F, forming the top electrode 6 on a side of the first substrate 11 away from the bottom electrode 3 includes:
forming a top electrode 6 on a side of the first substrate 11 away from the bottom electrode 3 by deposition and etching; the top electrodes are interdigitated electrodes and aligned with the bottom electrodes.
Specifically, the top electrode 6 is patterned to be an interdigital electrode and aligned with the bottom interdigital electrode so that the bulk acoustic wave resonator can excite different modes, for example, referring to fig. 2F, the top electrode 6 is patterned to be an interdigital electrode and aligned with the bottom electrode 3 being an interdigital electrode.
Optionally, the top electrode 6 is made of Al, Mo, Au, Ag, Ni, Pt, or Cu.
The embodiment of the invention provides a preparation method of a bulk acoustic wave resonator, which comprises the following steps: providing a piezoelectric substrate, and performing ion implantation on the piezoelectric substrate to form a first substrate and a second substrate which are connected by a defective layer; forming a metal electrode on the first substrate, and patterning the metal electrode to form a bottom electrode; bonding one surface of a piezoelectric substrate with a bottom electrode to a support substrate with a preset cavity, wherein the bottom electrodes are all positioned in the cavity; peeling off the second substrate of the piezoelectric substrate; thinning the first substrate to a required thickness; on the first substrate far from the bottom electrodeA top electrode is formed on the face. The method comprises the following steps of forming a bottom electrode on a piezoelectric substrate, and bonding the bottom electrode with a support substrate with a preset cavity, so that the problem that the structure of a resonator is adversely affected in the process of forming the bottom cavity in the conventional process is solved, the conventional process comprises two methods for forming the bottom cavity, one method is etching to form the bottom cavity, the method often has the problems of insufficient etching, excessive etching and the like, and the resonator is often damaged to reduce the performance of the resonator; the other method is that a sacrificial layer is formed in the cavity, a bottom electrode is formed on the sacrificial layer, the sacrificial layer is removed through thermal decomposition or an etchant method after a release hole is formed after a sample is bonded, so that the cavity is formed, the method can increase the process steps and the process cost, damage the resonator and reduce the performance of the resonator, a support substrate does not need to be etched to form a preset cavity, the preset cavity does not need to be formed through a method of filling the sacrificial layer and then decomposing the sacrificial layer, the process steps and the process cost are reduced, and the process fault tolerance is reduced; the bottom electrode is patterned to facilitate the bonding of the lithium niobate and the supporting layer, thereby overcoming the difficulty of bonding the metal and the supporting substrate in the conventional process, and Si or SiO2The bonding with lithium niobate or lithium tantalate is easy, and the bonding with metal is not easy, so that the supporting substrate is in contact bonding with the first substrate, the problem of difficult bonding between metal and the supporting substrate in the conventional process is solved, the process fault tolerance is reduced, the process steps and the process cost are reduced, and the working characteristics of the device are ensured.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for manufacturing a bulk acoustic wave resonator, comprising:
providing a piezoelectric substrate, and performing ion implantation on the piezoelectric substrate to form a first substrate and a second substrate which are connected by a defective layer;
forming a metal electrode on the first substrate, and patterning the metal electrode to form a bottom electrode; bonding one surface of the piezoelectric substrate with the bottom electrodes to a support substrate with a preset cavity, wherein the bottom electrodes are all positioned in the cavity;
peeling off the second substrate of the piezoelectric substrate;
thinning the first substrate to a required thickness;
and forming a top electrode on one surface of the first substrate far away from the bottom electrode.
2. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein the forming the first substrate and the second substrate having the defect layer connected thereto by ion implantation on the piezoelectric substrate comprises:
performing He to the piezoelectric substrate+Ion implantation; to form defects within the piezoelectric substrate; the defect is close to the implantation surface.
3. The method of manufacturing a bulk acoustic wave resonator according to claim 2, wherein the material of the piezoelectric substrate is lithium niobate or lithium tantalate.
4. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein the patterning the metal electrode to form a bottom electrode comprises:
etching the redundant metal electrode to form a flat electrode in a graphical mode; alternatively, the first and second electrodes may be,
and etching the redundant part of the metal electrode to form an interdigital electrode by patterning.
5. The method of manufacturing a bulk acoustic wave resonator according to claim 4, wherein the bottom electrode is made of Al, Mo, Au, Ag, Ni, Pt, or Cu.
6. The method of claim 1, wherein the supporting substrate is made of Si or has a layer of SiO on the surface thereof2A film.
7. The method for manufacturing a bulk acoustic wave resonator according to claim 1, wherein the peeling the second substrate of the piezoelectric substrate includes:
carrying out heat treatment on the bonded sample; so that the defect layer is automatically fractured;
peeling off the second substrate of the piezoelectric substrate.
8. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein the thinning the first substrate to a desired thickness comprises:
and thinning and polishing one surface of the first substrate far away from the bottom electrode in a chemical mechanical grinding mode, wherein the thickness range of the thinned first substrate is 400 nm-2000 nm.
9. The method of manufacturing a bulk acoustic wave resonator according to claim 1, wherein the forming a top electrode on a side of the piezoelectric substrate away from the bottom electrode comprises:
forming a top electrode on the side of the first substrate far away from the bottom electrode by a deposition and etching method; the top electrode is an interdigitated electrode and is aligned with the bottom electrode.
10. The method of manufacturing a bulk acoustic wave resonator according to claim 9, wherein the top electrode is made of Al, Mo, Au, Ag, Ni, Pt, or Cu.
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| CN113054941A (en) * | 2021-02-09 | 2021-06-29 | 偲百创(深圳)科技有限公司 | Method for manufacturing acoustic wave resonator and acoustic wave resonator |
| CN114301413A (en) * | 2021-12-29 | 2022-04-08 | 苏州达波新材科技有限公司 | Cavity type inverted acoustic wave device and preparation method thereof |
| CN114301406A (en) * | 2021-12-29 | 2022-04-08 | 苏州达波新材科技有限公司 | Cavity type piezoelectric monocrystal bulk acoustic resonator and preparation method thereof |
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