CN117544126A - Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology - Google Patents

Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology Download PDF

Info

Publication number
CN117544126A
CN117544126A CN202311481400.4A CN202311481400A CN117544126A CN 117544126 A CN117544126 A CN 117544126A CN 202311481400 A CN202311481400 A CN 202311481400A CN 117544126 A CN117544126 A CN 117544126A
Authority
CN
China
Prior art keywords
layer
electrode layer
bulk acoustic
film bulk
acoustic resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311481400.4A
Other languages
Chinese (zh)
Inventor
许荣彬
裴文皎
吴少城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen University
Original Assignee
Xiamen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen University filed Critical Xiamen University
Priority to CN202311481400.4A priority Critical patent/CN117544126A/en
Publication of CN117544126A publication Critical patent/CN117544126A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The invention belongs to the technical field of preparation of film bulk acoustic resonators, and particularly discloses a method for optimizing performance of a film bulk acoustic resonator by using a bonding flip-chip technology, which comprises the following steps: depositing a piezoelectric layer on a substrate; sputtering and growing a bottom electrode layer on the piezoelectric layer, and patterning the bottom electrode layer by photoetching and etching; growing a bonding layer and polishing the bonding layer; directly bonding the substrate etched with the grooves with the polished bonding layer to form a cavity, then flip-chip the device, and removing the original substrate by utilizing a chemical mechanical polishing and etching process; patterning the piezoelectric layer by photoetching and etching, exposing part of the bottom electrode, and then depositing a top electrode layer; and carrying out photoetching patterning on the top electrode layer, wherein the top electrode layer is opposite to the bottom electrode layer, and the top electrode layer, the piezoelectric layer and the bottom electrode layer form a sandwich structure to obtain the film bulk acoustic resonator. The method of the invention avoids the corrosion of the corrosive liquid to other structures of the device in the sacrificial layer removing process of the current commercial air gap type film bulk acoustic resonator, and simultaneously avoids the damage to the structure of the device due to the stress change of the cavity in the releasing process.

Description

Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology
Technical Field
The invention belongs to the technical field of preparation of film bulk acoustic resonators, and particularly relates to a method for optimizing performance of a film bulk acoustic resonator by using a bonding flip-chip technology.
Background
With the development of 5G communication technology, the development of rf filters in the direction of high frequency and miniaturization has become an unblockable trend. The traditional filter can not meet the current requirements, and the film bulk acoustic resonator (Film BulkAcoustic Resonator, FBAR) has the advantages of small volume, high working frequency, quick response, high quality factor, integration and relatively low processing difficulty, has better out-of-band rejection and insertion loss, and has wide application in 5G communication. Meanwhile, the requirements of the piezoelectric material in aspects of thermal stability, durability, precise preparation process and the like are also put higher requirements.
The main resonance area of the current FBAR resonator is composed of electrodes, piezoelectric layers and electrodes to form a sandwich structure, the cavity type FBAR resonator of the structure improves the carrier frequency to a certain extent, and the main cavity type FBAR filter is prepared by introducing a sacrificial layer and finally removing the sacrificial layer to obtain a cavity. The invention with the application number of 202211048802.0 provides a preparation method of a film bulk acoustic resonator. According to the invention, a groove is etched on a device substrate, a sacrificial layer is filled in the groove, a bottom electrode layer, a first piezoelectric layer, a second piezoelectric layer and a top electrode layer are directly deposited on the substrate in sequence, and finally a cavity structure is formed after the sacrificial layer is released. The corrosion liquid in the process of removing the sacrificial layer of the structure is easy to cause corrosion to other structures of the device to different degrees, and the stress change generated in the cavity releasing process is easy to damage the structure of the device, so that the performance and the yield of the device are reduced.
Therefore, a more efficient preparation method of the cavity type FBAR structure needs to be researched, so that the preparation process is simplified, the transmission loss is reduced, and the device performance is improved.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a method for optimizing the performance of a film bulk acoustic resonator by using a bonding flip-chip process. The method comprises the steps of sequentially depositing a piezoelectric layer, a bottom electrode layer and a bonding layer on a substrate, directly bonding the etched groove-shaped glass substrate and the bonding layer to form a cavity, then flip-chip mounting the device, removing the original substrate, and then depositing a top electrode layer. The method has the advantages that the problem that the corrosion liquid is easy to corrode other structures of the device in the process of removing the sacrificial layer is avoided, meanwhile, the problem that the structure of the device is easily damaged due to stress change generated in the releasing process of the cavity is avoided, and the performance and the yield of the device are guaranteed.
In order to achieve the above object, one of the technical solutions of the present invention is: a method for optimizing performance of a thin film bulk acoustic resonator using a bonded flip-chip process, comprising the steps of:
(1) Depositing a piezoelectric layer on a substrate;
(2) Sputtering and growing a bottom electrode layer on the piezoelectric layer, and patterning the bottom electrode layer by photoetching and etching;
(3) Growing a bonding layer on the bottom electrode by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, polishing the bonding layer, and then carrying out surface activation treatment on the bonding layer for subsequent bonding, wherein the bonding layer also serves as a supporting layer of the whole structure and electrically serves as an insulating layer between the bottom electrode and a substrate material;
(4) Etching a groove on a substrate, carrying out surface activation treatment on a bonding surface at the groove side, bonding with the bonding layer subjected to the surface activation treatment in the step (3) to form a cavity, then flip-chip mounting devices on a wafer, and removing the original substrate by utilizing a chemical mechanical polishing and etching process;
(5) Patterning the piezoelectric layer by photoetching and etching, exposing part of the bottom electrode, and then depositing a top electrode layer;
(6) And carrying out photoetching and etching patterning treatment on the top electrode layer, wherein the top electrode layer is opposite to the bottom electrode layer, and the top electrode layer, the piezoelectric layer and the bottom electrode layer form a sandwich structure to obtain the film bulk acoustic resonator.
In a preferred embodiment of the present invention, the substrate in step (1) includes, but is not limited to Si, siC, al 2 O 3 One of them.
In a preferred embodiment of the present invention, the material of the piezoelectric layer in the step (1) includes, but is not limited to AlN, znO, PZT, liNbO 3 、LiTaO 3 One of them.
In a preferred embodiment of the present invention, the thickness of the piezoelectric layer in the step (1) ranges from 200nm to 2 μm.
In a preferred embodiment of the present invention, the bottom electrode layer in step (2) and the top electrode layer in step (5) are both metal electrode layers.
Further preferably, the metal electrode material includes, but is not limited to, one of Mo, pt, W, ti, au, al.
In a preferred embodiment of the present invention, the thickness of the bottom electrode layer in the step (2) ranges from 50nm to 300nm.
In a preferred embodiment of the present invention, the bonding layer in the step (3) is made of SiO 2 The thickness of the bonding layer ranges from 200nm to 1um.
In a preferred embodiment of the present invention, the substrate material in the step (4) is glass.
In a preferred embodiment of the present invention, the depth of the groove in the step (4) ranges from 500nm to 3 μm.
In order to achieve the above object, a second technical scheme of the present invention is as follows: a film bulk acoustic resonator is prepared by a method for optimizing performance of the film bulk acoustic resonator by using a bonding flip-chip technology.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a method for preparing a film bulk acoustic resonator by using a bonding flip-chip technology, which adopts a glass substrate as a substrate of a device and a structure for forming a cavity, has lower cost, is beneficial to further improving the performance of the film bulk acoustic resonator and reduces transmission loss;
2. the bonding layer used in the invention can be used as a supporting layer of the whole device structure at the same time, thereby improving the stability of the device;
3. compared with the traditional method for obtaining the cavity by releasing the sacrificial layer, the method provided by the invention has the advantages that the glass substrate etched with the groove is directly bonded on the wafer, so that the cavity is obtained; the film layer is prevented from cracking or adhering to the lower surface of the sacrificial layer in the process of removing the sacrificial layer, and the cavity structure is difficult to recover; meanwhile, corrosion of other structures of the device caused by the corrosive liquid is avoided, and the performance and the yield of the device are ensured.
Drawings
FIG. 1 is a schematic cross-sectional view of a thin film bulk acoustic resonator of the present invention prior to flip-chip mounting of the device;
FIG. 2 is a schematic cross-sectional view of a thin film bulk acoustic resonator according to the present invention after removing the original Si substrate and flip-chip mounting the device;
FIG. 3 is a schematic cross-sectional view of the invention after a piezoelectric film, bottom electrode and bonding layer are grown sequentially on a substrate and patterned;
FIG. 4 is a schematic cross-sectional view of a cavity formed by flip-chip bonding a first wafer and a second wafer according to the present invention;
FIG. 5 is a schematic cross-sectional view of the piezoelectric thin film layer after the third wafer is flipped and the original Si substrate is removed;
FIG. 6 is a schematic cross-sectional view of a completed thin film bulk acoustic resonator of the present invention after a top electrode layer is grown on a piezoelectric thin film layer and patterned;
in the figure: 101-substrate, 102-piezoelectric layer, 103-bottom electrode layer, 104-bonding layer, 105-substrate, 106-top electrode layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in more detail with reference to the accompanying drawings and specific embodiments, but the scope of the present invention is not limited to these embodiments. Like reference numerals refer to like elements throughout, and like reference numerals refer to like elements.
In the description of the present invention, it should be understood that, the terms "upper", "lower", "front", "rear", "left", etc,
The orientation or positional relationship indicated by "right", "horizontal", "vertical", "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the perspective view of the drawings, and is merely for convenience in describing the present invention and simplifying the description, and does not indicate or imply that the device or element in question must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
A method for optimizing performance of a thin film bulk acoustic resonator using a bonded flip-chip process, comprising the steps of:
(1) Depositing a piezoelectric layer on a substrate;
(2) Sputtering and growing a bottom electrode layer on the piezoelectric layer, and patterning the bottom electrode layer by photoetching and etching;
(3) Growing a bonding layer on the bottom electrode by plasma enhanced chemical vapor deposition, polishing the bonding layer, and then carrying out surface activation treatment on the bonding layer;
(4) Etching a groove on a substrate, carrying out surface activation treatment on a bonding surface at the groove side, bonding with the bonding layer subjected to the surface activation treatment in the step (3) to form a cavity, then flip-chip mounting devices on a wafer, and removing the original substrate by utilizing a chemical mechanical polishing and etching process;
(5) Patterning the piezoelectric layer by photoetching and etching, exposing part of the bottom electrode, and then depositing a top electrode layer;
(6) And carrying out photoetching and etching patterning treatment on the top electrode layer, wherein the top electrode layer is opposite to the bottom electrode layer, and the top electrode layer, the piezoelectric layer and the bottom electrode layer form a sandwich structure to obtain the film bulk acoustic resonator.
The substrate in the step (1) comprises, but is not limited to Si, siC, al 2 O 3 One of them. .
The piezoelectric layer materials in step (1) include, but are not limited to AlN, znO, PZT, liNbO 3 、LiTaO 3 One of them.
The thickness of the piezoelectric layer in the step (1) ranges from 200nm to 2 mu m.
The bottom electrode layer in the step (2) and the top electrode layer in the step (5) are both metal electrode layers.
The metal electrode material is one of Mo, pt, W, ti, au, al.
The thickness range of the bottom electrode layer in the step (2) is 50nm-300nm.
The bonding layer in the step (3) is made of SiO 2 The thickness of the bonding layer ranges from 200nm to 1 μm.
And (3) the substrate material in the step (4) is glass.
The depth of the groove in the step (4) is in the range of 500nm-3 mu m.
A film bulk acoustic resonator is prepared by a method for optimizing performance of the film bulk acoustic resonator by using a bonding flip-chip technology.
Example 1
A film bulk acoustic resonator prepared by bonding flip-chip technology and method for optimizing performance of film bulk acoustic resonator is provided, wherein the schematic cross section of the film bulk acoustic resonator before flip-chip is shown in figure 1, and the schematic cross section of the film bulk acoustic resonator after removing the original Si substrate and flip-chip is shown in figure 2. The substrate 101 is Si; the piezoelectric layer 102 is made of monocrystalline AlN and has a thickness of 1 μm; the bottom electrode layer 103 and the top electrode layer 106 are both metal electrode layers, the metal electrode material is Mo, the thickness of the bottom electrode layer is 100nm, the thickness of the top electrode layer 106 is 100nm, and the bonding layer 104 is made of SiO 2 The thickness is 200nm; the material of the substrate 105 is glass, wherein the depth of the grooves is in the range of 500nm.
The preparation method comprises the following steps:
step 1: as shown in fig. 3, si (100) is selected as the substrate 101; growing a single crystal AlN piezoelectric layer 102 having a thickness of 1 μm on a substrate 101;
step 2: sputtering and growing a Mo bottom electrode layer 103 with the thickness of 100nm on the piezoelectric layer 102, and obtaining a needed bottom electrode pattern through photoetching and etching processes;
step 3: growing a bonding layer 104 on the bottom electrode layer by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, polishing the bonding layer, and then sending the bonding layer into a plasma activation system to perform surface activation treatment on the bonding layer to obtain a first wafer;
step 4: as shown in fig. 4, etching a 500nm deep groove on a glass substrate 105 with HF acid, and then sending the etched groove into a plasma activation system to perform surface activation treatment on a bonding surface of the groove side of the glass substrate to obtain a second wafer; aligning and bonding the first wafer and the second wafer by using the groove side of the bonding layer 104 and the glass substrate 105 as a contact surface to form a cavity, so as to obtain a third wafer; as shown in fig. 5, the third wafer is flipped, and the original Si substrate 101 is removed by Chemical Mechanical Polishing (CMP) in combination with a dry etching process;
step 5: patterning the piezoelectric layer 102 by photolithography and etching processes to expose a portion of the bottom electrode Mo; as shown in fig. 6, a Mo top electrode layer 106 with a thickness of 100nm is grown on the upper surface of the piezoelectric layer 102;
step 6: the top electrode layer 106 is subjected to graphic processing through photoetching and etching processes, the top electrode layer 106 is opposite to the bottom electrode layer 105, and the top electrode layer, the piezoelectric layer and the bottom electrode layer form a sandwich structure, so that a complete sample, namely the film bulk acoustic resonator, is obtained.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (10)

1. A method for optimizing performance of a thin film bulk acoustic resonator using a bonding flip-chip process, comprising the steps of:
(1) Depositing a piezoelectric layer on a substrate;
(2) Sputtering and growing a bottom electrode layer on the piezoelectric layer, and patterning the bottom electrode layer by photoetching and etching;
(3) Growing a bonding layer on the bottom electrode by plasma enhanced chemical vapor deposition, polishing the bonding layer, and then carrying out surface activation treatment on the bonding layer;
(4) Etching a groove on a substrate, carrying out surface activation treatment on a bonding surface at the groove side, bonding with the bonding layer subjected to the surface activation treatment in the step (3) to form a cavity, then flip-chip mounting devices on a wafer, and removing the original substrate by utilizing a chemical mechanical polishing and etching process;
(5) Exposing part of the bottom electrode and then depositing a top electrode layer through photoetching and etching the piezoelectric layer;
(6) And carrying out photoetching and etching patterning treatment on the top electrode layer, wherein the top electrode layer is opposite to the bottom electrode layer, and the top electrode layer, the piezoelectric layer and the bottom electrode layer form a sandwich structure to obtain the film bulk acoustic resonator.
2. The method of optimizing performance of a thin film bulk acoustic resonator of claim 1, wherein the substrate in step (1) comprises, but is not limited to Si, siC or Al 2 O 3 One of them.
3. A method of optimizing the performance of a thin film bulk acoustic resonator as claimed in claim 1 wherein the material of the piezoelectric layer in step (1) includes, but is not limited to AlN, znO, PZT, liNbO 3 、LiTaO 3 One of them.
4. The method of optimizing the performance of a thin film bulk acoustic resonator of claim 1, wherein the piezoelectric layer in step (1) has a thickness of 200nm to 2 μm.
5. The method of optimizing performance of a thin film bulk acoustic resonator of claim 1, wherein the bottom electrode layer in step (2) and the top electrode layer in step (5) are both metal electrode layers.
6. A method of optimizing the performance of a thin film bulk acoustic resonator as claimed in claim 5, wherein said metal electrode material comprises, but is not limited to, one of Mo, pt, W, ti, au or Al.
7. The method of optimizing the performance of a thin film bulk acoustic resonator of claim 1, wherein the thickness of the bottom electrode layer in step (2) ranges from 50nm to 300nm.
8. The method of optimizing performance of a thin film bulk acoustic resonator of claim 1 wherein the material of the bonding layer in step (3) is SiO 2 Thickness range of bonding layerThe circumference is 200nm-1 μm.
9. The method of optimizing performance of a thin film bulk acoustic resonator of claim 1, wherein the substrate material in step (4) is glass and the depth of the grooves is in the range of 500nm to 3 μm.
10. A thin film bulk acoustic resonator produced by the method of optimizing thin film bulk acoustic resonator performance of any one of claims 1-9.
CN202311481400.4A 2023-11-08 2023-11-08 Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology Pending CN117544126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311481400.4A CN117544126A (en) 2023-11-08 2023-11-08 Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311481400.4A CN117544126A (en) 2023-11-08 2023-11-08 Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology

Publications (1)

Publication Number Publication Date
CN117544126A true CN117544126A (en) 2024-02-09

Family

ID=89793034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311481400.4A Pending CN117544126A (en) 2023-11-08 2023-11-08 Method for optimizing performance of film bulk acoustic resonator by bonding flip-chip technology

Country Status (1)

Country Link
CN (1) CN117544126A (en)

Similar Documents

Publication Publication Date Title
JP3965026B2 (en) Bottom electrode across the entire cavity of a substrate mounted bulk acoustic resonator
US6617751B2 (en) Film bulk acoustic resonator and method for fabrication thereof
CN109309483A (en) A kind of preparation method of support type thin film bulk acoustic wave resonator
CN112290901B (en) Cavity type film bulk acoustic resonator packaging structure and preparation method thereof
JP2000069594A (en) Acoustic resonator and manufacture of the same
CN111262543A (en) Scandium-doped aluminum nitride lamb wave resonator and preparation method thereof
CN105703733A (en) Method for preparing solid assembled film bulk acoustic wave resonator
CN112803910A (en) Preparation method of single crystal film bulk acoustic resonator
CN113489467B (en) Method for preparing single crystal film bulk acoustic resonator and filter by adopting improved process
CN107026627A (en) Orthogonal array nano-pillar FBAR and preparation method thereof and wave filter
CN111010137A (en) Air gap type film bulk acoustic resonator and preparation method thereof
CN111371426A (en) Air-gap type shear wave resonator based on lithium niobate and preparation method thereof
CN113193846B (en) Film bulk acoustic resonator with hybrid transverse structural features
CN111446944A (en) Air gap type film bulk acoustic resonator beneficial to integration and preparation method thereof
US20240275352A1 (en) Baw filter structure and preparation method thereof
CN115001426B (en) Preparation method of film bulk acoustic resonator based on multiple bonding processes
WO2022134861A1 (en) Frequency-tunable film bulk acoustic resonator and preparation method therefor
CN109995342B (en) Preparation method of air-gap type film bulk acoustic resonator
CN212163290U (en) Scandium-doped aluminum nitride lamb wave resonator
CN113452341A (en) Thermotropic SMP (symmetric multi-processing) based air-gap bulk acoustic wave resonator and preparation method thereof
CN212381185U (en) Air gap type film bulk acoustic resonator beneficial to integration
CN212012592U (en) Filter for optimizing single crystal film bulk acoustic resonator by utilizing radio frequency inductor
JP2005303573A (en) Thin film piezoelectric resonator and its manufacturing method
CN115001429B (en) Preparation method of filter
CN115498974A (en) Thin film bulk acoustic wave device with cavity structure obtained by stress control and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination