CN109981069B - Method for preparing film bulk acoustic wave resonator with isolation layer and bulk acoustic wave resonator - Google Patents

Method for preparing film bulk acoustic wave resonator with isolation layer and bulk acoustic wave resonator Download PDF

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CN109981069B
CN109981069B CN201910187206.2A CN201910187206A CN109981069B CN 109981069 B CN109981069 B CN 109981069B CN 201910187206 A CN201910187206 A CN 201910187206A CN 109981069 B CN109981069 B CN 109981069B
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single crystal
bulk acoustic
isolation layer
lower electrode
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CN109981069A (en
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吴传贵
罗文博
帅垚
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

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  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The invention relates to the technical field of acoustic wave resonator preparation, in particular to a method for preparing a film bulk acoustic wave resonator with an isolating layer and a bulk acoustic wave resonator; the method comprises the following steps: injecting high-energy ions from the lower surface of the single crystal wafer, wherein the high-energy ions enter the single crystal wafer to form a damaged layer, and separating the single crystal wafer into an upper piezoelectric layer and a single crystal film layer to obtain the damaged single crystal wafer; sequentially preparing a patterned lower electrode, a patterned sacrificial layer, an isolation layer and a bonding layer on the lower surface of the monocrystalline film layer; stacking the substrate and the bonding layer, carrying out wafer splitting treatment, stripping an upper piezoelectric layer at the upper end of the single crystal film layer, and preparing an upper electrode on the upper surface of the single crystal film layer; and (4) arranging sacrificial layer release holes required by the patterned sacrificial layer on the upper surface of the single crystal thin film layer, and releasing the sacrificial layer to obtain the high-quality cavity type bulk acoustic wave resonator of the single crystal thin film body.

Description

Method for preparing film bulk acoustic wave resonator with isolation layer and bulk acoustic wave resonator
Technical Field
The invention relates to the technical field of acoustic wave resonator preparation, in particular to a method for preparing a film bulk acoustic wave resonator with an isolating layer and a bulk acoustic wave resonator.
Background
With the rapid development of wireless communication technology, the traditional dielectric filter and surface acoustic wave filter are difficult to meet the requirement of high frequency, a new generation of film bulk acoustic resonator well meets the requirement, the basic structure of the film bulk acoustic resonator is a simple three-layer structure, and the film bulk acoustic resonator sequentially comprises an upper electrode, a piezoelectric film and a metal isolation layer from top to bottom. The key to the acoustic wave resonator is the quality of the film.
The current piezoelectric film mainly adopts the mode of deposit, is difficult to guarantee the lattice orientation of film, and in addition the deposit on metal electrode, the film quality receives the influence of electrode layer, and electrode and piezoelectric material lattice mismatch, electrode surface roughness are too big all can lead to piezoelectricity single crystal film to grow polycrystal, and then influence the film quality, reduce the device performance of film bulk acoustic resonator.
In addition, a high-quality piezoelectric film can be obtained by adopting a wafer bonding transfer technology, a single crystal wafer material or a wafer material with a high-quality epitaxial piezoelectric layer is selected and subjected to high-energy ion implantation, and then the high-quality piezoelectric film can be transferred and prepared on a target substrate by combining a wafer bonding process. However, since the thickness of the piezoelectric film is usually in the micron or even sub-micron order, the film may be warped or recessed or even broken due to defects such as bubbles generated in the bonding layer during the bonding process.
Therefore, in view of the above problems, the present invention is directed to a method for manufacturing a film bulk acoustic resonator having an isolation layer and a bulk acoustic resonator.
Disclosure of Invention
The invention aims to provide a preparation method of a film bulk acoustic resonator with an isolating layer and a bulk acoustic resonator, which solve the technical problem that the performance of a cavity type bulk acoustic resonator is influenced by the tilting or sinking or even breaking of a film due to bubbles generated by a single crystal film in the existing bonding process by arranging the isolating layer between a lower electrode and a bonding layer.
The invention provides a preparation method of a film bulk acoustic resonator with an isolating layer, which comprises the following steps:
injecting high-energy ions from the lower surface of the single crystal wafer, wherein the high-energy ions enter the single crystal wafer to form a damaged layer, and separating the single crystal wafer into an upper piezoelectric layer and a single crystal film layer to obtain the damaged single crystal wafer;
sequentially preparing a patterned lower electrode, a patterned sacrificial layer, an isolation layer and a bonding layer on the lower surface of the damaged monocrystalline wafer; stacking the substrate on the bonding layer, performing bonding treatment and wafer splitting treatment, and removing the upper piezoelectric layer to obtain a single crystal film with an isolation layer;
preparing an upper electrode on the upper surface of the single crystal film with the isolation layer to obtain a single crystal film bulk acoustic resonator with the isolation layer;
and (3) opening a sacrificial layer release hole communicated with the patterned sacrificial layer on the upper surface of the single crystal film bulk acoustic resonator, and releasing the sacrificial layer to obtain the single crystal film cavity type bulk acoustic resonator with the isolation layer.
Preferably, the material of the isolation layer comprises SiO2、Si3N4Or a metal.
Preferably, the thickness of the isolation layer is 0.1 μm to 2.0 μm; preferably, the thickness of the spacer layer is 0.1 μm to 0.5 μm.
Preferably, the isolation layer is prepared by any one of a plasma enhanced chemical vapor deposition (pecvd) method or a magnetron sputtering method; the preparation method of the bonding layer comprises any one of a spin coating method or a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
Preferably, the patterned lower electrode preparing step comprises: and coating photoresist on the lower surface of the damaged single crystal wafer to form a photoresist layer, exposing and developing the photoresist by adopting a patterned mask, growing a lower electrode, removing the photoresist, and preparing the patterned lower electrode.
Preferably, the patterned lower electrode preparing step comprises: growing a lower electrode on the lower surface of the monocrystalline film layer, coating photoresist on the surface of the lower electrode, exposing and developing the photoresist by adopting a patterned mask, etching the lower electrode without covering the photoresist, and removing the photoresist to obtain the patterned lower electrode.
Preferably, the patterned sacrificial layer preparing step comprises: and growing a sacrificial layer on the patterned lower electrode, and performing mask etching to obtain the patterned sacrificial layer.
Preferably, the bonding layer material includes benzocyclobutene (BCB), Polyimide (PI), silicon silsesquioxane (HSQ), spin-on-glass (SOG), silicon dioxide (SiO)2) Silicon nitride (Si)3N4) At least one of; the upper electrode and the lower electrode are made of any one of aluminum (Al), molybdenum (Mo), platinum (Pt), gold (Au) and tungsten (W);
the sacrificial layer material comprises amorphous silicon, Polyimide (PI), and silicon oxide (SiO)2) At least one of phosphosilicate glass (PSG) or borophosphosilicate glass (BPSG);
the material of the single crystal thin film layer comprises one of quartz, Lithium Niobate (LN), Lithium Tantalate (LT), aluminum nitride, zinc oxide, barium titanate, potassium dihydrogen phosphate, lead magnesium niobate, gallium nitride, gallium arsenide, indium phosphide, silicon carbide or diamond;
the substrate is made of one of silicon, silicon on an insulating layer, glass, quartz, lithium niobate, lithium tantalate, silicon carbide, gallium nitride, gallium arsenide and diamond.
Preferably, the curing temperature of the bonding layer is 200-600 ℃, and the bonding time is 10-30 min; the wafer splitting treatment temperature is 200-300 ℃; the wafer splitting processing time is 2h-5 h.
Preferably, the thickness of the upper electrode and the thickness of the lower electrode are both 50nm-300 nm;
the thickness of the patterned sacrificial layer is 50nm-6 μm; preferably, 50-300nm or 300-1000nm or 1 μm-6 μm;
the thickness of the single crystal film layer is 0.1-8 μm; preferably, 0.3 μm to 1.0 μm or 1.0 μm to 1.8 μm or 1.8 μm to 2.2 μm or 2.2 μm to 8 μm.
The thickness of the bonding layer is 0.1-10 μm; preferably, 0.1 μm to 0.3 μm or 0.3 μm to 6 μm or 6 μm to 10 μm.
Preferably, the high energy ions include hydrogen ions (H)+) Helium ion (He)2+) Boron ion (B)3+) Or arsenic ion (As)3+) At least one of; the selection range of the implantation energy of the high-energy ions is 150keV-1000 keV; the implantation depth of the high-energy ions is 0.6-2.2 μm.
The invention also comprises a bulk acoustic wave resonator which is prepared based on the preparation method of the film bulk acoustic wave resonator with the isolating layer;
preferably, the cavity type bulk acoustic wave resonator sequentially comprises an upper electrode, a single crystal thin film layer, a lower electrode, an isolation layer, a bonding layer and a substrate from top to bottom; and the isolating layer is provided with a cavity which is arranged corresponding to the upper electrode and the lower electrode.
Compared with the prior art, the film bulk acoustic resonator with the isolating layer and the preparation method thereof provided by the invention have the following advantages that:
1. according to the preparation method of the film bulk acoustic resonator with the isolation layer, the isolation layer is arranged between the lower electrode and the bonding layer, so that bubbles generated in the bonding process of the bonding layer can be prevented, further, the bubbles are prevented from entering the single crystal film layer, the quality of the single crystal film layer is prevented from being influenced, in addition, the isolation layer can play a role in supporting the upper electrode in the device preparation process, and the device performance of the prepared single crystal film cavity type bulk acoustic resonator is ensured.
2. According to the preparation method of the film bulk acoustic resonator with the isolation layer, the isolation layer is made of the metal material or the amorphous silicon material, the effect of blocking bubbles is achieved, and the high-quality single crystal film cavity type bulk acoustic resonator is obtained.
3. According to the preparation method of the film bulk acoustic resonator with the isolation layer, the isolation layer is made of a metal material or an amorphous silicon material and has certain hardness, so that the damage of a sacrificial layer caused in the polishing process of a bonding layer can be prevented, the protection of a lower electrode is realized, and the high-quality single crystal film cavity type bulk acoustic resonator is prepared.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a block diagram illustrating the steps of a method for fabricating a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 2 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 3 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 4 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 5 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 6 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 7 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 8 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
FIG. 9 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention;
fig. 10 is a schematic structural diagram of a method for manufacturing a film bulk acoustic resonator with an isolation layer according to the present invention.
Description of reference numerals:
1-an upper electrode; 2-a monocrystalline film layer; 3-a lower electrode; 4-an isolation layer; 5-a bonding layer; 6-a substrate; 7-a cavity; 8-damage layer; 9-an upper piezoelectric layer; 10-a sacrificial layer; 11-sacrificial layer release holes.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements.
Referring to fig. 1, fig. 2, fig. 3, fig. 4, fig. 5, fig. 6, fig. 7, fig. 8, fig. 9 and fig. 10, the present invention provides a method for manufacturing a thin film bulk acoustic resonator with an isolation layer, including the following steps:
s1) injecting high-energy ions A from the lower surface of the single crystal wafer, wherein the high-energy ions A enter the single crystal wafer to form a damaged layer 8, and the single crystal wafer is divided into an upper piezoelectric layer 9 and a single crystal film layer 2 to obtain a damaged single crystal wafer;
s2) preparing a patterned lower electrode 3, a patterned sacrificial layer 10, an isolation layer 4 and a bonding layer 5 on the lower surface of the damaged monocrystalline wafer in sequence; stacking the substrate 6 on the bonding layer, performing bonding treatment and wafer splitting treatment, and removing the upper piezoelectric layer 9 to obtain a single crystal film with an isolation layer;
s3) preparing an upper electrode 1 on the upper surface of the single crystal film with the isolating layer to obtain the single crystal film bulk acoustic resonator with the isolating layer;
s4) opening a sacrificial layer release hole 11 communicated with the patterned sacrificial layer on the upper surface of the single crystal film bulk acoustic resonator, and releasing the sacrificial layer 10 to obtain the single crystal film cavity type bulk acoustic resonator with the isolation layer.
Specifically, the material of the isolation layer 4 comprises SiO2、Si3O4Or a metal.
Specifically, the thickness of the isolation layer 4 is 0.1 μm to 2.0 μm; preferably, the thickness of the spacer layer is 0.1 μm to 0.5 μm.
Specifically, the preparation method of the isolation layer 4 includes any one of a plasma enhanced chemical vapor deposition method (PECVD) or a magnetron sputtering method; the bonding layer 5 is prepared by any one of a spin coating method or a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
Specifically, the preparation process of the patterned lower electrode 3 comprises the following steps: and exposing and developing the photoresist by adopting a patterned mask, growing a lower electrode, removing the photoresist, and preparing the patterned lower electrode.
Specifically, the preparation process of the patterned lower electrode 3 comprises the following steps: growing a lower electrode on the lower surface of the monocrystalline film layer, coating photoresist on the surface of the lower electrode, exposing and developing the photoresist by adopting a patterned mask, etching the lower electrode without covering the photoresist, and removing the photoresist to obtain the patterned lower electrode.
Specifically, the process of preparing the patterned sacrificial layer 10 includes: and growing a sacrificial layer on the patterned lower electrode 3, and performing mask etching to obtain the patterned sacrificial layer.
Specifically, the bonding layer 5 material includes benzocyclobutene (BCB), Polyimide (PI), silicon silsesquioxane (HSQ), Spin On Glass (SOG), silicon dioxide (SiO)2) Silicon nitride (Si)3N4) At least one of; the upper electrode and the lower electrode are made of any one of aluminum (Al), molybdenum (Mo), platinum (Pt), gold (Au) and tungsten (W);
the patterned sacrificial layer 10 is made of amorphous silicon, Polyimide (PI), or silicon oxide (SiO)2) At least one of phosphosilicate glass (PSG) or borophosphosilicate glass (BPSG);
the material of the single crystal thin film layer 2 comprises one of quartz, Lithium Niobate (LN), Lithium Tantalate (LT), aluminum nitride, zinc oxide, barium titanate, potassium dihydrogen phosphate, lead magnesium niobate, gallium nitride, gallium arsenide, indium phosphide, silicon carbide or diamond;
the substrate 6 is made of one of silicon, silicon on an insulating layer, glass, quartz, lithium niobate, lithium tantalate, silicon carbide, gallium nitride, gallium arsenide, and diamond.
Specifically, the curing temperature of the bonding layer 5 is 200-600 ℃, and the bonding time is 10-30 min; the wafer splitting treatment temperature is 200-300 ℃; the wafer splitting processing time is 2h-5 h.
Specifically, the thicknesses of the upper electrode 1 and the lower electrode 3 are both 50nm-300 nm;
the thickness of the patterned sacrificial layer is 50nm-6 μm; preferably, 50-300nm or 300-1000nm or 1 μm-6 μm;
the thickness of the single crystal film layer is 0.1-8 μm; preferably, 0.3 μm to 1.0 μm or 1.0 μm to 1.8 μm or 1.8 μm to 2.2 μm or 2.2 μm to 8 μm.
The thickness of the bonding layer is 0.1-10 μm; preferably, 0.1 μm to 0.3 μm or 0.3 μm to 6 μm or 6 μm to 10 μm.
Preferably, the high energy ions include hydrogen ions (H)+) Helium ion (He)2+) Boron ion (B)3+) Or arsenic ion (As)3+) At least one of; the selection range of the implantation energy of the high-energy ions is 150keV-1000 keV; the implantation depth of the high-energy ions is 0.6-2.2 μm.
The invention also provides a bulk acoustic wave resonator which is prepared based on any one of the above film bulk acoustic wave resonator preparation methods with the isolating layer; the cavity type bulk acoustic wave resonator sequentially comprises an upper electrode 1, a single crystal thin film layer 2, a lower electrode 3, an isolation layer 4, a bonding layer 5 and a substrate 6 from top to bottom; wherein, the isolating layer 4 is provided with a cavity 6 which is arranged corresponding to the upper electrode 1 up and down; the lower electrode 3 is disposed in the cavity 6.
Design principle of cavity type bulk acoustic wave resonator:
the isolation layer is arranged between the lower electrode and the bonding layer, so that the bonding layer can be prevented from generating bubbles in the bonding process, the bubbles are prevented from entering the single crystal thin film layer, the quality of the single crystal thin film layer is influenced, the isolation layer can also play a role in supporting the upper electrode in the device preparation process, and the device performance of the prepared single crystal thin film cavity type bulk acoustic wave resonator is ensured.
Example one
1) Selecting lithium niobate single crystal wafer, and implanting high-energy helium ions (He) into the lower surface of the lithium niobate single crystal wafer2+) Forming a damaged layer in the lithium niobate single crystal wafer, wherein the damaged layer divides the lithium niobate single crystal wafer into a lithium niobate upper piezoelectric layer and a lithium niobate single crystal film layer; he (He)2+The implantation energy of (2) was 200kev and the implantation depth was 0.6 μm;
2) preparing a lower electrode on the lower surface of the lithium niobate single crystal thin film layer, wherein the lower electrode can be prepared in two ways, the first method is to coat photoresist (Rehong AZ6212) on the lower surface of the lithium niobate single crystal thin film layer to form a photoresist layer, expose and develop the photoresist by adopting a patterned mask (made of chromium), grow the lower electrode, and clean and remove the photoresist by adopting acetone to obtain the patterned lower electrode; growing a lower electrode on the lower surface of the lithium niobate single crystal thin film layer, and etching the mask region on a lower electrode mask to obtain a patterned lower electrode, wherein the patterned lower electrode is prepared by the first method in the embodiment; wherein, Pt can be adopted as the lower electrode; the growth mode of the lower electrode is that the lower electrode is grown by electron beam deposition; the thickness of the prepared lower electrode is 100 nm;
3) growing a patterned sacrificial layer on the surface of the patterned lower electrode; the preparation process of the graphical sacrificial layer comprises the steps of preparing the sacrificial layer on the surface of the lower electrode, imaging a mask, and etching an unmasked area to obtain the graphical sacrificial layer; the method for preparing the sacrificial layer comprises the steps of growing PI with a certain thickness by adopting a vapor deposition method (pecvd), wherein the thickness of the patterned sacrificial layer is 100 nm;
4) preparing an isolation layer on the patterned sacrificial layer, and growing Si with a certain thickness by a vapor deposition method (pecvd)3N4；
5) Preparing a bonding layer on the isolation layer, wherein benzocyclobutene (BCB) can be selected, and the thickness of spin coating is 0.3 μm; bonding the bonding layer with a Si substrate, carrying out bonding curing treatment and wafer splitting treatment, stripping a lithium niobate upper piezoelectric layer at the upper end of the lithium niobate single crystal thin film layer, and preparing a Pt upper electrode on the upper surface of the lithium niobate single crystal thin film layer; curing in a heating furnace at the bonding curing temperature of 400 ℃; the bonding curing time is 2 h; (ii) a The wafer splitting temperature is 260 ℃, and the wafer splitting time is 3 h;
6) the method comprises the steps of forming sacrificial layer release holes needed by a patterned sacrificial layer on the upper surface of a lithium niobate single crystal thin film layer, adopting argon ion dry etching according to specific conditions, forming a plurality of sacrificial layer release holes on the lithium niobate single crystal thin film layer, injecting potassium hydroxide (KOH) from the sacrificial layer release holes, removing the sacrificial layer, and obtaining the single crystal thin film cavity type bulk acoustic wave resonator with the isolation layer.
The prepared lithium niobate single crystal film cavity type bulk acoustic wave resonator with the isolating layer has no collapse, the quality factor (Q) value of the inductor is more than 3000, and the equivalent electromechanical coupling coefficient is more than 20 percent.
Example two
1) Selecting lithium niobate single crystal wafer, and implanting high-energy helium ions (He) into the lower surface of the lithium niobate single crystal wafer2+) Forming a damaged layer in the lithium niobate single crystal wafer, wherein the damaged layer divides the lithium niobate single crystal wafer into a lithium niobate upper piezoelectric layer and a lithium niobate single crystal film layer; he (He)2+The implantation energy of (2) was 200kev and the implantation depth was 0.6 μm;
2) preparing a lower electrode on the lower surface of the lithium niobate single crystal thin film layer, wherein the lower electrode can be prepared in two ways, the first method is to coat photoresist (Rehong AZ6212) on the lower surface of the lithium niobate single crystal thin film layer to form a photoresist layer, expose and develop the photoresist by adopting a patterned mask (made of chromium), grow the lower electrode, and clean and remove the photoresist by adopting acetone to obtain the patterned lower electrode; growing a lower electrode on the lower surface of the lithium niobate single crystal thin film layer, and etching the mask region on a lower electrode mask to obtain a patterned lower electrode, wherein the patterned lower electrode is prepared by the first method in the embodiment; wherein, Pt can be adopted as the lower electrode; the growth mode of the lower electrode is that the lower electrode grows by electron beam deposition; the thickness of the prepared lower electrode is 100 nm;
3) growing a patterned sacrificial layer on the surface of the patterned lower electrode; the preparation process of the graphical sacrificial layer comprises the steps of preparing the sacrificial layer on the surface of the lower electrode, imaging a mask, and etching an unmasked area to obtain the graphical sacrificial layer; the method for preparing the sacrificial layer comprises the steps of growing PI with a certain thickness by adopting a vapor deposition method (PECVD); the thickness of the patterned sacrificial layer is 50nm-6 μm; the thickness of the sacrificial layer is 100 nm;
4) and preparing an isolation layer on the patterned sacrificial layer, and growing metal with a certain thickness by a vapor deposition method (PECVD).
5) On the isolating layerPreparing a bonding layer, optionally Si3N4As a bonding layer; growing Si on the isolation layer3N4The thickness is 10 mu m; wherein, Si3N4The bonding of (2) requires planarizing the surface while the Si grows on the isolation layer3N4Uneven surface with height difference, before substrate bonding, to Si3N4Grinding and polishing; bonding the bonding layer with the substrate, carrying out wafer splitting treatment, stripping the upper piezoelectric layer of the lithium niobate at the upper end of the lithium niobate single crystal thin film layer, and preparing a Pt upper electrode on the upper surface of the lithium niobate single crystal thin film layer;the bonding curing temperature is 250 ℃; the bonding curing time is 2 h; the wafer splitting temperature is 260 ℃, and the wafer splitting time is 3 h.
6) The method comprises the steps of forming sacrificial layer release holes needed by a patterned sacrificial layer on the upper surface of a lithium niobate single crystal thin film layer, adopting argon ion dry etching according to specific conditions, forming a plurality of sacrificial layer release holes on the lithium niobate single crystal thin film layer, injecting potassium hydroxide (KOH) from the sacrificial layer release holes, removing the sacrificial layer, and obtaining the single crystal thin film cavity type bulk acoustic wave resonator with the isolation layer.
In table 1, the isolation layer in this embodiment is made of metal, and the prepared cavity type bulk acoustic wave resonator with the lithium niobate single crystal thin film body having the isolation layer has no collapse, a Q value greater than 2500, and an equivalent electromechanical coupling coefficient greater than 20%.
EXAMPLE III
The selected single crystal wafer is lithium tantalate, the preparation method is the same as that of the first embodiment, and the table 1 shows that the cavity type bulk acoustic wave resonator of the lithium tantalate single crystal film body prepared has no collapse, the Q value is larger than 2000, and the equivalent electromechanical coupling coefficient is larger than 10%.
Example four
The selected single crystal wafer is lithium tantalate, the preparation method is the same as that of the second embodiment, and the table 1 shows that the cavity type bulk acoustic wave resonator of the lithium tantalate single crystal film body prepared has no collapse, the Q value is larger than 2000, and the equivalent electromechanical coupling coefficient is larger than 10%.
TABLE 1 physical Properties of Single Crystal film Cavity bulk Acoustic wave resonators
Q value Equivalent electromechanical coupling coefficient
Existing acoustic wave resonator 200-300 Less than 10 percent
Example one ＞2000 ＞15％
Example two ＞2500 ＞15％
EXAMPLE III ＞2000 ＞10％
Example four ＞2000 ＞10％
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.

Claims (10)

1. A method for preparing a film bulk acoustic resonator with an isolation layer is characterized in that: the method comprises the following steps:
injecting high-energy ions from the lower surface of the single crystal wafer, wherein the high-energy ions enter the single crystal wafer to form a damaged layer, and separating the single crystal wafer into an upper piezoelectric layer and a single crystal film layer to obtain the damaged single crystal wafer;
sequentially preparing a patterned lower electrode, a patterned sacrificial layer, an isolation layer and a bonding layer on the lower surface of the damaged monocrystalline wafer; stacking the substrate on the bonding layer, performing bonding treatment and wafer splitting treatment, and removing the upper piezoelectric layer to obtain a single crystal film with an isolation layer;
preparing an upper electrode on the upper surface of the single crystal film with the isolation layer to obtain a single crystal film bulk acoustic resonator with the isolation layer;
and (3) opening a sacrificial layer release hole communicated with the patterned sacrificial layer on the upper surface of the single crystal film bulk acoustic resonator, and releasing the sacrificial layer to obtain the single crystal film cavity type bulk acoustic resonator with the isolation layer.
2. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer according to claim 1, wherein: the isolation layer comprises SiO2、Si3N4Or a metal.
3. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer according to claim 2, wherein: the thickness of the isolation layer is 0.1-2.0 μm.
4. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer according to claim 3, wherein: the preparation method of the isolation layer comprises any one of chemical vapor deposition, pulsed laser deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) or magnetron sputtering, electron beam deposition and resistance type evaporation; the preparation method of the bonding layer comprises any one of a spin coating method, a plasma enhanced chemical vapor deposition method (PECVD) and a magnetron sputtering method.
5. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer as claimed in claim 4, wherein: the preparation method of the patterned lower electrode comprises the following steps: and coating photoresist on the lower surface of the damaged single crystal wafer to form a photoresist layer, exposing and developing the photoresist by adopting a patterned mask, growing a lower electrode, removing the photoresist, and preparing the patterned lower electrode.
6. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer as claimed in claim 4, wherein: the preparation method of the patterned lower electrode comprises the following steps: growing a lower electrode on the lower surface of the monocrystalline film layer, coating photoresist on the surface of the lower electrode, exposing and developing the photoresist by adopting a patterned mask, etching the lower electrode without covering the photoresist, and removing the photoresist to obtain the patterned lower electrode.
7. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer according to claim 5 or 6, wherein: the preparation method of the patterned sacrificial layer comprises the following steps: and growing a sacrificial layer on the patterned lower electrode, and performing mask etching to obtain the patterned sacrificial layer.
8. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer as claimed in claim 7, wherein:
the bonding layer material comprises benzocyclobutene (BCB), Polyimide (PI), silicon silsesquioxane (HSQ), spin-on-glass (SOG), and silicon dioxide (SiO)2) Silicon nitride (Si)3N4) At least one of; the upper electrode and the lower electrode are made of any one of aluminum (Al), molybdenum (Mo), platinum (Pt), gold (Au) and tungsten (W);
the sacrificial layer material comprises amorphous silicon, Polyimide (PI), and silicon oxide (SiO)2) Phosphosilicate glass(PSG) or borophosphosilicate glass (BPSG);
the material of the single crystal thin film layer comprises one of quartz, Lithium Niobate (LN), Lithium Tantalate (LT), aluminum nitride, zinc oxide, barium titanate, potassium dihydrogen phosphate, lead magnesium niobate, gallium nitride, gallium arsenide, indium phosphide, silicon carbide or diamond;
the substrate is made of one of silicon, silicon on an insulating layer, glass, quartz, lithium niobate, lithium tantalate, silicon carbide, gallium nitride, gallium arsenide and diamond.
9. The method for manufacturing a thin film bulk acoustic resonator having an isolation layer according to claim 8, wherein: the curing temperature of the bonding layer is 200-600 ℃, and the bonding time is 10-30 min; the wafer splitting treatment temperature is 200-300 ℃; the wafer splitting processing time is 2h-5 h.
10. A bulk acoustic wave resonator, characterized by: the film bulk acoustic resonator with the isolation layer is manufactured based on the method for manufacturing the film bulk acoustic resonator with the isolation layer as claimed in any one of claims 1 to 9.
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