CN114050800A - Method for quickly forming micro-acoustic film resonator cavity structure - Google Patents
Method for quickly forming micro-acoustic film resonator cavity structure Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The invention discloses a method for quickly forming a micro-acoustic film resonator cavity structure, and belongs to the technical field of film bulk acoustic resonators. Etching a groove on the substrate silicon, forming a first sacrificial layer in the bottom of the groove, forming a second sacrificial layer above the first sacrificial layer and on the inner wall of the groove, forming a third sacrificial layer in the center of the second sacrificial layer, and then forming a supporting layer on the third sacrificial layer; forming a bottom electrode on the supporting layer, removing the second sacrificial layer by wet etching, removing the first sacrificial layer and the third sacrificial layer, and forming a piezoelectric layer and a top electrode on the bottom electrode to form a micro-acoustic film resonator cavity structure; the support layer may not completely cover the second sacrificial layer. The specific three-layer sacrificial layer structure is designed, then the middle sacrificial layer is removed by wet etching, the contact area between the etching solution and the upper and lower sacrificial layers is increased, and the purpose of quickly forming a cavity structure is achieved.
Description
Technical Field
The invention relates to the technical field of film bulk acoustic resonators, in particular to a method for quickly forming a micro-acoustic film resonator cavity structure.
Background
The Film Bulk Acoustic Resonator (FBAR) is a novel miniaturized radio frequency resonator at present, and has the advantages of low insertion loss, high quality factor, high effective electromechanical coupling coefficient and high stability. The working frequency of the film bulk acoustic resonator can reach 500 MHz-10 GHz, the quality factor can reach 1000 and above, and the film bulk acoustic resonator has a good temperature coefficient, and importantly, the film bulk acoustic resonator can be integrated with the current RFIC (radio frequency integrated circuit) process, so that a radio frequency device is more miniaturized. Therefore, the film bulk acoustic resonator is often designed into a radio frequency filter and a duplexer for the current mobile communication technology industry. FBAR is favored by researchers due to its small size and high quality factor. In recent years, sensors based on FBAR devices are also in the field of micro-mass detection, biosensing, monitoring of parameters in harsh and narrow environments, and the like.
The FBAR mainly comprises a silicon substrate, a lower electrode layer, a piezoelectric layer and an upper electrode layer, and has three conventional structures, namely a back etching type FBAR, a cavity type FBAR and a Bragg type FBAR, wherein the FBAR is most used, has the best device performance and is relatively easy to process. When the FBAR works, the piezoelectric film generates vibration under the action of electric signals transmitted by the upper electrode and the lower electrode, and excites bulk acoustic waves which are longitudinally transmitted along the film, and when the bulk acoustic waves are transmitted to one surface of the top electrode, which is contacted with the external air, and one surface of the bottom electrode, which is contacted with the external air, the acoustic impedance of the air can be approximate to 0 under an ideal state, so that the acoustic waves are reflected up and down in the structure of the upper electrode, the piezoelectric layer and the lower electrode of the FBAR. However, in practical engineering applications, the structure of the upper electrode, the piezoelectric layer, and the lower electrode is often fabricated on the silicon substrate by magnetron sputtering, vapor deposition, and other methods in the MEMS process. To ensure that the sound wave can be completely confined inside the film, wherein the outside of the upper surface of the device is already in contact with air and the sound wave cannot leak, and the underside is connected with the substrate, measures are taken to limit the leakage of the sound wave, so that a cavity structure is often designed on the underside of the structure to prevent the leakage of the sound wave. In the design of the electrode layer and the piezoelectric layer, the electrode layer and the piezoelectric layer are generally designed into irregular polygons, so that parasitic resonance generated in the device during operation is reduced as much as possible, and the influence on the performance of the bulk acoustic wave device is reduced.
The quality of the cavity structure directly influences the quality factor and the electromechanical coupling coefficient of the film bulk acoustic wave device, and the excellent cavity structure can enable the piezoelectric layer of the FBAR to vibrate under the action of alternating current, so that the bulk acoustic waves excited to propagate along the longitudinal direction of the film are all limited in the structure of the upper electrode-the piezoelectric layer-the lower electrode to be reflected up and down. If bulk acoustic waves leak into the silicon substrate due to the imprecise cavity structure, the quality factor and the electromechanical coupling coefficient of the FBAR may be affected. However, in the actual cavity preparation process, a concave groove is usually formed on the substrate by etching, a single sacrificial layer material is filled in the concave groove, and the sacrificial layer material is removed by wet etching or dry etching to form the cavity structure. However, in the conventional method for etching the sacrificial layer, the contact area between the etching solution and the etching gas and the material of the sacrificial layer is small, which results in too long release time of the sacrificial layer, which is not favorable for the subsequent film preparation, and the device is exposed in the corrosive environment for too long time, so that other films are damaged to different extents, and if the reaction rate is too fast, the substrate and other films of the device are damaged, thereby affecting the yield and the film forming speed of the device. The traditional method has high cost and is not beneficial to large-scale production. It is therefore desirable to find a method that is relatively inexpensive and that is capable of forming cavity structures relatively quickly.
Disclosure of Invention
The invention aims to provide a method for quickly forming a micro-acoustic thin film resonator cavity structure. The specific three-layer sacrificial layer structure is designed, then the middle sacrificial layer is removed by wet etching, the contact area between the etching solution and the upper and lower sacrificial layers is increased, and the purpose of quickly forming a cavity structure is achieved.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention adopts one of the technical schemes: a method for rapidly forming a micro-acoustic thin film resonator cavity structure is provided, which comprises the following steps:
etching a groove on the substrate silicon, forming a first sacrificial layer in the bottom of the groove, forming a second sacrificial layer above the first sacrificial layer and on the inner wall of the groove, forming a third sacrificial layer in the center of the second sacrificial layer, and then forming a supporting layer on the third sacrificial layer; forming a bottom electrode on the supporting layer, removing the second sacrificial layer by wet etching, removing the first sacrificial layer and the third sacrificial layer, and forming a piezoelectric layer and a top electrode on the bottom electrode to form a micro-acoustic film resonator cavity structure;
the support layer may not completely cover the second sacrificial layer.
Preferably, the depth of the groove is 0.8-1.1 μm; the thickness of the first sacrificial layer is 300-400 nm; the thickness of the second sacrificial layer is 200-300 nm; the thickness of the third sacrificial layer is 300-400 nm.
Preferably, the second sacrificial layer formed on the inner wall of the recess is flush with the base silicon around the recess.
Preferably, the third sacrificial layer is abraded flush around after formation.
Preferably, the material of the first sacrificial layer and the third sacrificial layer comprises Si3N4Or amorphous silicon; the material of the second sacrificial layer comprises a metal oxide or a metal nitride.
More preferably, the metal oxide is ZnO and the metal nitride is AlN.
Preferably, the material of the support layer is Si3N4And the thickness of the supporting layer is 300 nm.
More preferably, the etching solution used in the wet etching is an alkaline solution.
The invention selects alkaline solution as corrosive liquid and the first, second and third sacrificial layers made of specific materials, aiming at enabling the second sacrificial layer to react with the corrosive liquid firstly and then react with the first and third sacrificial layers. The second sacrificial layer in the middle is etched first, so that the contact area of the reaction can be further increased, and the etching speed of the first layer and the third layer is increased.
Preferably, the method of forming the first sacrificial layer, the second sacrificial layer, the third sacrificial layer, the support layer, the bottom electrode, the piezoelectric layer and the top electrode includes a magnetron sputtering method or a vapor deposition method.
The invention has the following beneficial technical effects:
according to the invention, a specific three-layer sacrificial layer structure is designed, and then the middle sacrificial layer is removed by wet etching, so that the contact area between etching solution and the upper and lower sacrificial layers is increased, and the purpose of quickly forming a cavity structure is achieved.
According to the preparation method provided by the invention, if the second sacrificial layer is AlN, 1 micron of AlN in a 40% KOH alkaline solution can be completely corroded in only 3-4 s at 80 ℃, and if the first sacrificial layer and the third sacrificial layer are amorphous silicon, 2 microns of AlN in a 40% KOH alkaline solution can be completely corroded in about 15 minutes at 80 ℃.
The preparation method provided by the invention can avoid the condition that the substrate and other film layers of the device are damaged due to the excessively high reaction rate; meanwhile, the defects of small contact area between the corrosive liquid and the sacrificial material and long release time of the sacrificial material can be overcome.
Drawings
FIG. 1 is a top view of a third deposition layer of the present invention;
FIG. 2 is a schematic longitudinal sectional view of the layers before the sacrificial layer is released;
FIG. 3 is a schematic diagram of a wet etching process according to the present invention;
names represented by reference numerals in the drawings: 101 is base silicon; 102 is a second sacrificial layer; 103 is a third sacrificial layer; 104 is a first sacrificial layer; 105 is a support layer; 106 is a bottom electrode.
Detailed Description
Reference will now be made in detail to various exemplary embodiments of the invention, the detailed description should not be construed as limiting the invention but as a more detailed description of certain aspects, features and embodiments of the invention. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Further, for numerical ranges in this disclosure, it is understood that each intervening value, between the upper and lower limit of that range, is also specifically disclosed. Every smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in a stated range is encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention.
As used herein, the terms "comprising," "including," "having," "containing," and the like are open-ended terms that mean including, but not limited to.
Example 1
The preparation method of the micro-acoustic film resonator cavity structure comprises the following steps:
step 1: firstly, photoetching a groove window of a sacrificial layer on the surface of the base silicon 101 by using an inverse photoresist, and etching a groove on the base silicon 101 in a deep reactive ion etching mode, wherein the depth of the groove is 0.8 mu m.
Step 2: a first sacrificial layer 104 of amorphous silicon is formed at the bottom of the trench by vapor deposition to a thickness of 300 nm.
And step 3: designing a mask according to the shape of the groove, depositing an AlN layer with a thickness of 200nm on the first sacrificial layer 104 formed in step 2, and depositing an AlN layer with a thickness of 300nm on the inner wall of the groove to be flush with the surrounding base silicon 101, to form a second sacrificial layer 102.
And 4, step 4: a third sacrificial layer 103 of amorphous silicon is formed by vapor deposition in the central part of the second sacrificial layer 102 formed in step 3, and the thickness is 300 nm.
And 5: and grinding the second sacrificial layer 102 and the third sacrificial layer 103 in the groove to be flush with the base silicon 101 by adopting a chemical mechanical polishing mode, wherein the deposition of the composite sacrificial layer is completed, and the top view of the device is shown in fig. 1.
Step 6: formation of Si by means of vapour deposition3N4The thickness of the support layer 105 is 300nm, and the support layer 105 needs to cover the groove portion, but needs to reserve a release channel for releasing the sacrificial layer.
And 7: a positive photolithography mask is selected, the bottom electrode 106 (in this embodiment, a pentagon) of Mo (inactive metal, not corroded by the corrosive liquid) is formed by the photoresist through vapor deposition, the thickness is 200nm, and a schematic longitudinal section view of the device is shown in fig. 2.
And 8: and releasing the sacrificial layer, placing the device after the steps in KOH aqueous solution, and increasing stirring during the process to provide an etching rate, wherein the KOH solution is firstly contacted and reacted with the second sacrificial layers 102(AlN) positioned at two sides of the groove, and the second sacrificial layers 102(AlN) at two sides of the groove are firstly corroded to form a through hole because the reaction rate of KOH and AlN is higher, so that KOH corrosive liquid can enter the composite sacrificial layer to start to corrode the second sacrificial layer 102(AlN) positioned in the middle. After the middle second sacrificial layer 102 is completely etched, the KOH solution may completely enter the composite sacrificial layer, and at this time, the KOH solution may etch the third sacrificial layer 103 (amorphous silicon) and the first sacrificial layer 104 (amorphous silicon) from top to bottom, respectively, so as to increase the rate of forming the cavity, and the process of the KOH solution entering the composite sacrificial layer in the wet etching is shown in fig. 3.
And step 9: after the wet etching is performed, the device is washed and dried, the sacrificial layer is released, and the support layer 105 and the bottom electrode 106 are prepared. And then a subsequent piezoelectric layer and a top electrode are formed at the upper end of the bottom electrode 106 to form a micro-acoustic thin-film resonator cavity structure.
Example 2
The preparation method of the micro-acoustic film resonator cavity structure comprises the following steps:
compared with example 1, the difference is that: in the step 1, the depth of the groove is 1.1 mu m; the thickness of the first sacrificial layer 104 in step 2 is 400 nm; in step 3, the thickness of the part of the second sacrificial layer 102 deposited on the first sacrificial layer 104 is 300nm, and the thickness of the part deposited on the inner wall of the groove is 200 nm; the thickness of the third sacrificial layer 103 in step 4 is 300 nm; other conditions were the same as in example 1.
According to the method of the embodiment 1-2, the final manufactured cavity structure has no residual sacrificial layer material on the inner wall, the bottom is flat, and the lower surface of the supporting layer has no residual sacrificial layer and no cracking phenomenon.
Comparative example 1
The preparation method of the micro-acoustic film resonator cavity structure comprises the following steps:
the difference from example 1 is that the composite sacrificial layer is replaced with a sacrificial layer made of AlN, and the other parameters are the same as in example 1.
According to the method of comparative example 1, the finally prepared cavity structure has serious internal corrosion, the inner wall of the cavity is damaged, and the supporting layer is easy to crack.
Comparative example 2
The preparation method of the micro-acoustic film resonator cavity structure comprises the following steps:
the difference from example 1 is that the material of the first sacrificial layer was replaced with AlN (a composite sacrificial layer composed of two sacrificial layers was obtained), and the other parameters were the same as in example 1.
According to the method of comparative example 1, the finally prepared cavity structure substrate is seriously corroded and uneven, and the lower surface of the supporting layer is easy to leave the residual sacrificial layer material.
The reasons for the above phenomena are as follows:
due to the fact that the AlN and the alkaline KOH solution react quickly, if the sacrificial layer is made of the AlN, the 1-micron sacrificial layer in a single device can be corroded within 2-3 s in the alkaline environment of KOH of 40% at 80 ℃. Due to the batch fabrication on the wafer, complete release of the sacrificial layer of each group cannot be guaranteed within 2-3 s. And then, the sacrificial layer of some device units is completely corroded and released within 2-3 s, and then the cavity is filled with KOH solution, so that the inner wall of the cavity is corroded, even other film layers are corroded, and finally the performance of the device is influenced.
If the first sacrificial layer is made of AlN and the second sacrificial layer is made of amorphous silicon, the first sacrificial layer is corroded due to the high reaction speed of AlN and KOH solution, and the alkaline solution enters the sacrificial layer to corrode the amorphous silicon upwards. At this time, because the reaction rate of the amorphous silicon and the KOH alkaline solution is slow, the contact time of the alkaline solution and the substrate at the bottom of the cavity is prolonged, corrosion damage inside the cavity is caused, and the performance of the device is influenced.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solutions of the present invention can be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are within the scope of the present invention defined by the claims.
Claims (9)
1. A method for rapidly forming a micro-acoustic film resonator cavity structure is characterized by comprising the following steps: etching a groove on base matrix silicon (101), forming a first sacrificial layer (104) in the bottom of the groove, forming a second sacrificial layer (102) above the first sacrificial layer (104) and on the inner wall of the groove, forming a third sacrificial layer (103) in the center of the second sacrificial layer (102), and then forming a support layer (105) on the third sacrificial layer (103); forming a bottom electrode (106) on the supporting layer (105), removing the second sacrificial layer (102) by wet etching, removing the first sacrificial layer (104) and the third sacrificial layer (103), and finally forming a piezoelectric layer and a top electrode on the bottom electrode (106) to form a micro-acoustic film resonator cavity structure;
the support layer (105) cannot completely cover the second sacrificial layer (102).
2. The method for rapidly forming the cavity structure of the micro-acoustic thin film resonator according to claim 1, wherein the depth of the groove is 0.8 to 1.1 μm; the thickness of the first sacrificial layer (104) is 300-400 nm; the thickness of the second sacrificial layer (102) is 200-300 nm; the thickness of the third sacrificial layer (103) is 300-400 nm.
3. The method for rapidly forming a cavity structure of a micro-acoustic film resonator according to claim 1, wherein the second sacrificial layer (102) formed on the inner wall of the groove is flush with the base silicon (101) around the groove.
4. The method for rapidly forming a micro-acoustic thin film resonator cavity structure, according to claim 1, wherein the third sacrificial layer (103) is formed and then ground to be flush with the surrounding.
5. The method for rapidly forming a micro-acoustic thin film resonator cavity structure according to claim 1, wherein the material of the first sacrificial layer (104) and the third sacrificial layer (103) comprises Si3N4Or amorphous silicon; the material of the second sacrificial layer (102) comprises a metal oxide or a metal nitride.
6. The method for rapidly forming the cavity structure of the micro-acoustic film resonator according to claim 5, wherein the etching solution selected by the wet etching is an alkaline solution.
7. Method for the rapid formation of a micro-acoustic thin-film resonator cavity structure according to claim 1, characterized in that the material of the support layer (105) is Si3N4。
8. The method for rapidly forming the micro-acoustic thin film resonator cavity structure according to claim 1, wherein the thickness of the support layer (105) is 200-300 nm.
9. The method for rapidly forming the cavity structure of the micro-acoustic thin film resonator according to claim 1, wherein the method for forming the first sacrificial layer (104), the second sacrificial layer (102), the third sacrificial layer (103), the support layer (105), the bottom electrode, the piezoelectric layer and the top electrode comprises magnetron sputtering or vapor deposition.
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|---|---|---|---|
| CN202111324640.4A CN114050800A (en) | 2021-11-10 | 2021-11-10 | Method for quickly forming micro-acoustic film resonator cavity structure |
| PCT/CN2022/082143 WO2023082521A1 (en) | 2021-11-10 | 2022-03-22 | Method for rapidly forming cavity structure of micro-acoustic film resonator |
| ZA2022/07007A ZA202207007B (en) | 2021-11-10 | 2022-06-23 | A method for rapidly forming a cavity structure of film bulk acoustic resonator |
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| WO2023082521A1 (en) * | 2021-11-10 | 2023-05-19 | 浙江水利水电学院 | Method for rapidly forming cavity structure of micro-acoustic film resonator |
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| JP4245450B2 (en) * | 2003-09-29 | 2009-03-25 | パナソニック株式会社 | Manufacturing method of resonator |
| JP4428354B2 (en) * | 2006-03-29 | 2010-03-10 | セイコーエプソン株式会社 | Piezoelectric thin film resonator |
| CN108288960B (en) * | 2017-01-10 | 2022-02-25 | 稳懋半导体股份有限公司 | Method for tuning resonator, method for forming cavity of resonator and filter |
| CN109981069B (en) * | 2019-03-13 | 2022-03-15 | 电子科技大学 | Method for preparing film bulk acoustic wave resonator with isolation layer and bulk acoustic wave resonator |
| CN110690871A (en) * | 2019-09-20 | 2020-01-14 | 中国科学院长春光学精密机械与物理研究所 | Film bulk acoustic resonator with heat insulation structure and preparation method thereof |
| CN112563878B (en) * | 2020-12-10 | 2023-11-07 | 武汉光迅科技股份有限公司 | Thermally tuned semiconductor chip and preparation method thereof |
| CN114050800A (en) * | 2021-11-10 | 2022-02-15 | 浙江水利水电学院 | Method for quickly forming micro-acoustic film resonator cavity structure |
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| WO2023082521A1 (en) * | 2021-11-10 | 2023-05-19 | 浙江水利水电学院 | Method for rapidly forming cavity structure of micro-acoustic film resonator |
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Application publication date: 20220215 |