CN109993156A - Ultrasonic fingerprint identifies panel and display device - Google Patents
Ultrasonic fingerprint identifies panel and display device Download PDFInfo
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- CN109993156A CN109993156A CN201910337453.6A CN201910337453A CN109993156A CN 109993156 A CN109993156 A CN 109993156A CN 201910337453 A CN201910337453 A CN 201910337453A CN 109993156 A CN109993156 A CN 109993156A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
This application discloses a kind of ultrasonic fingerprint identification panel and display devices.Ultrasonic fingerprint identifies panel, including gate insulating layer, grid, flatness layer, source-drain electrode, source-drain electrode insulating layer, organic insulator, receiving electrode, receiving electrode insulating layer, the piezoelectric thin film layer, driving electrodes set gradually, further include: the first extraction electrode, first extraction electrode is set to organic insulator, is connected by the first via hole with source-drain electrode；Second extraction electrode, the second extraction electrode are set to receiving electrode insulating layer, are connected by the second via hole with driving electrodes.
Description
Technical field
The present disclosure relates generally to fingerprint Identification sensor field more particularly to ultrasonic fingerprint identification panels and display dress
It sets.
Background technique
There are two types of product form for existing ultrasonic fingerprint recognition means, and one is using Silicon Wafer as the semiconductor work of substrate
The ultrasonic fingerprint recognition means of skill preparation, one is the ultrasonic fingerprints prepared using glass as the low temperature polysilicon process of substrate
Recognition means, common issue existing for the two is:
1, substrate is thick, though glass substrate by reduction process thickness in 0.1mm or so, and substrate thinning process loss
Yield.The space occupied is big when substrate thickness causes ultrasonic fingerprint recognition means to be bonded with display lid glass sheet, so that producing
Product thickness becomes larger.
2, substrate is thick and is rigid substrate, is not suitable for being bonded with the display screen of ultrathin flexible.
3, current production is not suitable for generating large size panel.
Summary of the invention
In view of drawbacks described above in the prior art or deficiency, it is intended to provide a kind of slim and large-sized ultrasonic fingerprint knowledge
Other panel and display device.
In a first aspect, a kind of ultrasonic fingerprint identifies panel, including set gradually gate insulating layer, grid, flatness layer,
Source-drain electrode, source-drain electrode insulating layer, organic insulator, receiving electrode, receiving electrode insulating layer, piezoelectric thin film layer, driving electrodes, also
Include:
First extraction electrode, the first extraction electrode are set to organic insulator, are connected by the first via hole with source-drain electrode；
Second extraction electrode, the second extraction electrode are set to receiving electrode insulating layer, pass through the second via hole and driving electrodes
It is connected.
In one or more embodiments of the application, driving electrodes are provided with high density away from the side of piezoelectric thin film layer
Metal layer.
In one or more embodiments of the application, receiving electrode is spaced from each other with the second extraction electrode, and above-mentioned two
Simultaneously same layer is set to receiving electrode insulating layer to person.
It further include substrate in one or more embodiments of the application, substrate is flexible base board.
In one or more embodiments of the application, it is provided between organic insulator and receiving electrode insulating layer inorganic
Insulating layer.
It further include active layer in one or more embodiments of the application, active layer, which is set to gate insulating layer, to deviate from
The side of grid, is provided with third via hole between active layer and source-drain electrode, third via hole, the first via hole on one wire with substrate
Vertically.
In one or more embodiments of the application, the first extraction electrode is symmetrical arranged centered on the first via hole.
In one or more embodiments of the application, the thickness of organic insulator is greater than the thickness of source-drain electrode insulating layer.
Second aspect provides a kind of display device, including ultrasonic wave provided by each embodiment of claim the application
Fingerprint recognition panel and the display panel being bonded with it.
In one or more embodiments of the application, display panel has flexible substrate substrate.
It can by the way that multiple extraction electrodes are respectively set in different layers according to technical solution provided by the embodiments of the present application
Reduce the cabling closeness of peripheral circuit caused by large scale.Further, according to some embodiments of the application, by using
Flexible base board, moreover it is possible to reduce the thickness of entire fingerprint recognition panel, obtain ultra-thin and flexible effect.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 shows the exemplary structure frame of the ultrasonic fingerprint identification panel based on NMOS according to the embodiment of the present application
Figure；
Fig. 2 shows the exemplary knots that panel is identified according to the ultrasonic fingerprint based on PMOS of another embodiment of the application
Structure block diagram；
Fig. 3 shows the example of the ultrasonic fingerprint identification method for producing panel based on NMOS according to the embodiment of the present application
Property flow chart；
Fig. 4, which is shown, identifies method for producing panel according to the ultrasonic fingerprint based on PMOS of another embodiment of the application
Exemplary process diagram.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that in order to
Convenient for description, part relevant to invention is illustrated only in attached drawing.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
As shown in Figure 1, a kind of ultrasonic fingerprint identifies panel, including the gate insulating layer 4, grid 5, flat set gradually
Layer 8, source-drain electrode 9, source-drain electrode insulating layer 10, organic insulator 12, receiving electrode 14, receiving electrode insulating layer 16, piezoelectric membrane
Layer 17, driving electrodes 18, further includes:
First extraction electrode 11, the first extraction electrode 11 are set to organic insulator 12, pass through the first via hole 21 and source and drain
Pole 9 is connected；
Second extraction electrode 15, the second extraction electrode 15 are set to receiving electrode insulating layer 16, by the second via hole 22 with
Driving electrodes 18 are connected.
By the way that the first extraction electrode and the second extraction electrode, and source-drain electrode 9 is respectively set to source-drain electrode 9 and driving electrodes 18
With the first extraction electrode respectively in different layers, that is, source-drain electrode insulating layer 10 and organic insulator 12, driving electrodes 18 and second are drawn
Different layers is arranged in electrode 15 out, and the second extraction electrode 15 is set to receiving electrode insulating layer 16.Such setting can be real
The data cabling that multilayer is laid is formed on present peripheral circuit, advantageously forms large-sized fingerprint recognition panel.
It is understood that its extraction can be arranged to each source-drain electrode and driving electrodes according to practical application scene
Electrode, or extraction electrode is set to part source-drain electrode and driving electrodes.
In some embodiments, driving electrodes 18 are provided with high desnity metal layer 19 away from the side of piezoelectric thin film layer.?
The acoustic resistance difference of art of acoustic waves, two media is bigger, medium it is of poor quality bigger, while sonic velocity change is bigger.Acoustic impedance difference is got over
Greatly, the inertia of phonon is bigger, and inertia is bigger to create energy condition to ultrasonic reflections, so, the acoustic impedance difference of two media
Bigger, ultrasonic reflections ability is bigger.Wherein, acoustic impedance are as follows:
The velocity of sound in acoustic impedance=density × medium
Obviously, acoustic impedance is directly proportional to density, thus driving electrodes away from piezoelectric thin film layer side be provided with it is highly dense
Metal layer is spent, the ultrasonic wave that the piezoelectric membrane in vibrating is generated largely is reflexed to through high desnity metal layer towards flat
The direction of smooth layer improves the precision of fingerprint recognition.
In some embodiments, receiving electrode 14 is spaced from each other with the second extraction electrode 1, and the two and same layer, which are set to, to be connect
Receive electrode dielectric layer.Such set-up mode, opposite receiving electrode and the second extraction electrode are respectively arranged at the mode of different layers
For, the thickness in space and fingerprint recognition panel can be saved.It should be noted that the receiving electrode 14 and first electrode 11 it
Between by the 4th via hole 24 connect, for acquiring the voltage signal of receiving electrode, to form fingerprint image.
In some embodiments, inorganic insulation layer is provided between organic insulator and receiving electrode insulating layer.In this way, anti-
Receiving electrode 14 is stopped and when organic insulator 12 is disposed proximate to, brought by organic insulator itself adsorbing contaminant or water imbibition
Adverse effect to metal electrode.
It in some embodiments, further include substrate 1, substrate is flexible base board.The relatively traditional glass substrate of flexible base board
For it is relatively thin, therefore realize on the basis of not increasing the reduction process of technique such as glass substrate ultra-thin.In addition, in order to increase
Add buffering effect, buffer layer 2 is provided between substrate and active layer.Deviate from the side of driving electrodes in high desnity metal layer again
Protective layer 20 is set.
It further include active layer 29, active layer 29 is set to the side that gate insulating layer deviates from grid, active layer and source-drain electrode
Between be provided with third via hole 23, third via hole 23, the first via hole 21 are on one wire and vertical with substrate.It makes it easy to realize
More switching tubes can be arranged in identical space in the close setting of switching tube.
In some embodiments, the first extraction electrode 11 is symmetrical arranged centered on the first via hole 21.Symmetrically arranged side
Formula is capable of the positioning process of simplified pattern extraction electrode.
In some embodiments, the thickness of organic insulator is greater than the thickness of source-drain electrode insulating layer.Increase organic insulator
Thickness can increase the distance between receiving electrode and source-drain electrode, reduce formed between receiving electrode and source-drain electrode it is parallel
The capacitance of plate capacitor.Specifically, the capacitance of parallel plate capacitor is directly proportional to dielectric constant, is inversely proportional with distance.Therefore, it adopts
With the lesser organic insulator of dielectric constant, and increase its thickness, the capacitance of the parallel plate capacitor will be reduced.
As shown in Fig. 2, the ultrasonic fingerprint identification panel based on PMOS identifies panel with the ultrasonic fingerprint based on NMOS
Difference is active layer 30.The active layer 29 of the ultrasonic fingerprint identification panel of NMOS is successively set on the direction for be parallel to substrate
It is equipped with N-type heavily doped region 6, N-type lightly doped district 7, multi-crystal silicon area 3, N-type lightly doped district 7, N-type heavily doped region 6；The ultrasound of PMOS
The active layer 30 of wave fingerprint recognition panel is disposed with p-type heavily doped region, multi-crystal silicon area, p-type on being parallel to orientation substrate
Heavily doped region.
A kind of display device is also disclosed in the application, which includes ultrasonic wave provided by each embodiment of the application
Fingerprint recognition panel and the display panel being bonded with it.
In some embodiments, display panel has flexible substrate substrate.When the ultrasonic fingerprint of display panel and fitting
When identification panel is all made of flexible base board, the effect of ultrathin bendable can be obtained.
Disclosed herein as well is a kind of manufacturing methods of ultrasonic fingerprint identification panel.As shown in figure 3, super based on NMOS
The manufacturing method of sound wave fingerprint recognition panel includes the following steps:
Step S1: on the glass substrate, flexible base board is formed.
Step S2: buffer layer is formed, coating, chemical vapor deposition (CVD, Chemical Vapor can be used
Deposition), plasma activated chemical vapour deposition (PECVD, Plasma Enhanced Chemical Vapor
Deposition) mode is formed.
Step S3: forming active layer, which is polysilicon membrane；
Step S4: the ion implanting of TFT Vth is carried out, to adjust threshold voltage vt h；
Step S5: gate insulating layer is formed, coating, chemical vapor deposition (CVD, Chemical Vapor can be used
Deposition), plasma activated chemical vapour deposition (PECVD, Plasma Enhanced Chemical Vapor
Deposition) mode is formed；
Step S6: patterning forms grid, and physical vaporous deposition can be used and form grid, shows wet etching using exposure
Technique form required pattern；
Step S7: carrying out the injection of N-type heavy doping ion, to form N-type heavily doped region in active layer；
Step S8: carrying out N-type and ion implanting be lightly doped, to form N-type lightly doped district in active layer；
Step S9: the via hole for forming flatness layer and being connected with N-type heavily doped region, to be connected with source-drain electrode；
Step S10: patterning forms source-drain electrode, and physical vaporous deposition can be used and form grid, show using exposure
The technique of wet etching forms required pattern；
Step S11: the via hole for forming source-drain electrode insulating layer and being connected with source-drain electrode is drawn with will pass through the via hole and first
Electrode connection；
Step S12: patterning forms first lead electrode, and physical vaporous deposition can be used and form grid, using exposure
Light shows that the technique of wet etching forms required pattern；
Step S13: forming organic insulator and the via hole that connect with the first extraction electrode, by the via hole source-drain electrode with connect
Electrode is received to be connected；It is understood that it is not that the first extraction electrode of each source-drain electrode requires to be connected with receiving electrode, and
It is the first extraction electrode of the source-drain electrode that will need to be connected with receiving electrode in organic insulator formation connection via hole；
Step S14: forming the extension via hole for the via hole connecting in inorganic insulation layer and step S13 with the first extraction electrode,
So that source-drain electrode is connected with receiving electrode；
Step S15: patterning forms receiving electrode and the second extraction electrode, and physical vaporous deposition can be used and form grid
Pole forms required pattern using the technique of exposure display wet etching；
Step S16: the via hole for forming receiving electrode insulating layer and being connected with the second extraction electrode is drawn by the via hole second
Electrode is connect with driving electrodes out；
Step S17: patterning forms piezoelectric thin film layer；
Step S18: patterning forms driving electrodes, and physical vaporous deposition specifically can be used and form driving electrodes, then
Show that the technique of wet etching forms required pattern through overexposure；
Step S19: patterning forms high desnity metal layer；
Step S20: forming protective layer, removes glass substrate.
The manufacturing method of ultrasonic fingerprint identification panel based on PMOS as shown in Figure 4 refers to the ultrasonic wave based on NMOS
The manufacturing method difference of line identification panel is that step S7 is different with step S8, and the ultrasonic fingerprint based on PMOS identifies panel
Manufacturing method correspondence step be step S27 carry out the injection of p-type heavy doping ion, active layer formed p-type heavily doped region.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (10)
1. a kind of ultrasonic fingerprint identifies panel, including gate insulating layer, grid, flatness layer, the source-drain electrode, source and drain set gradually
Pole insulating layer, organic insulator, receiving electrode, receiving electrode insulating layer, piezoelectric thin film layer, driving electrodes, which is characterized in that also
Include:
First extraction electrode, first extraction electrode are set to the organic insulator, pass through the first via hole and the source and drain
Extremely it is connected；
Second extraction electrode, second extraction electrode are set to the receiving electrode insulating layer, by the second via hole with it is described
Driving electrodes are connected.
2. ultrasonic fingerprint according to claim 1 identifies panel, which is characterized in that the driving electrodes deviate from the pressure
The side of thin film layer is provided with high desnity metal layer.
3. ultrasonic fingerprint according to claim 1 identifies panel, which is characterized in that the receiving electrode and described second
Extraction electrode is spaced from each other, and both above-mentioned and same layer is set to the receiving electrode insulating layer.
4. ultrasonic fingerprint according to claim 1 identifies panel, which is characterized in that further include substrate, the substrate is
Flexible base board.
5. ultrasonic fingerprint according to claim 1 identifies panel, which is characterized in that the organic insulator connects with described
It receives and is provided with inorganic insulation layer between electrode dielectric layer.
6. ultrasonic fingerprint according to claim 4 identifies panel, which is characterized in that it further include active layer, it is described active
Layer is set to the side that the gate insulating layer deviates from the grid, is provided with third between the active layer and the source-drain electrode
Via hole, the third via hole, first via hole are vertical with the substrate on one wire.
7. ultrasonic fingerprint according to claim 1 identifies panel, which is characterized in that first extraction electrode is with described
It is symmetrical arranged centered on first via hole.
8. ultrasonic fingerprint according to claim 1 identifies panel, which is characterized in that the thickness of the organic insulator is big
In the thickness of the source-drain electrode insulating layer.
9. a kind of display device, which is characterized in that including any ultrasonic fingerprint identification panel of claim 1-8 and with
Its display panel being bonded.
10. display device according to claim 9, which is characterized in that the display panel has flexible substrate substrate.
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| CN201910337453.6A CN109993156B (en) | 2019-04-24 | 2019-04-24 | Ultrasonic fingerprint identification panel and display device |
| PCT/CN2020/079974 WO2020215928A1 (en) | 2019-04-24 | 2020-03-18 | Ultrasonic fingerprint recognition device and display device |
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| CN201910337453.6A CN109993156B (en) | 2019-04-24 | 2019-04-24 | Ultrasonic fingerprint identification panel and display device |
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| WO2022001390A1 (en) * | 2020-06-29 | 2022-01-06 | 京东方科技集团股份有限公司 | Piezoelectric sensor and manufacturing method therefor, and detection apparatus |
| WO2023193295A1 (en) * | 2022-04-08 | 2023-10-12 | 武汉华星光电技术有限公司 | Display panel and manufacturing method therefor |
| WO2024055370A1 (en) * | 2022-09-13 | 2024-03-21 | 深圳市汇顶科技股份有限公司 | Ultrasonic fingerprint apparatus and electronic device |
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| Publication number | Publication date |
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| CN109993156B (en) | 2022-09-06 |
| WO2020215928A1 (en) | 2020-10-29 |
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