CN109991789A - Display panel and display panel preparation method - Google Patents
Display panel and display panel preparation method Download PDFInfo
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- CN109991789A CN109991789A CN201910280408.1A CN201910280408A CN109991789A CN 109991789 A CN109991789 A CN 109991789A CN 201910280408 A CN201910280408 A CN 201910280408A CN 109991789 A CN109991789 A CN 109991789A
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- layer
- display panel
- color blocking
- metal
- metal layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Abstract
This announcement provides the preparation method of a kind of display panel and display panel, display panel includes substrate, the device layer being disposed on the substrate and the flatness layer being arranged on device layer, wherein, display panel further includes color blocking layer, and color blocking layer is arranged between device layer and flatness layer.The case where by the way that the color blocking layer of display area to be extended to the gate driving circuit region of surrounding, guarantees that topography is more flat when flatness layer is arranged, and then reduces the stress problem at metal wire broad edge, flatness layer is avoided to remove.
Description
Technical field
This announcement is related to field of display technology more particularly to a kind of display panel and display panel preparation method.
Background technique
Liquid crystal display device (Liquid Crystal Display, LCD) has thin fuselage, power saving, radiationless etc. numerous
Advantage is widely used in fields such as LCD TV, mobile phone, computer screens.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and back
Optical mode group.With the LCD gradually development to directions such as large scale, high-res, high color saturations, large scale liquid crystal display panel
Also it is more likely to using layer of transparent organic insulation flatness layer (Polymer Film On Array, PFA), to prevent in mould group
Interfering with each other between electric field, thus effectively improve as orographic factor and caused by show color difference, reduce parasitic capacitance, mention
High display quality.But in existing display panel, as planarization layer, before forming PFA, itself can be in face of difference
The landform of the various complexity of bottom, as the stacking of each layer metal of lower layer is led especially for the product of the thicker technology of metal film thickness
It causes the landform before forming PFA more complicated, while also needing the techniques such as aperture in the landform of this complexity, so that
After PFA film forming, in the edge of mould group metal line width, due to stress effect and cause PFA layers to remove here, and shadow
Ring the electrical property and yield of product.
In conclusion there is the planarization layers in display panel in the edge of metal line width for existing display panel,
Due to stress effect and remove, and then influence product electrical property and yield the problem of.
Summary of the invention
This announcement provides the preparation method of a kind of display panel and display panel, and metal wire can be reduced in display panel
Stress problem at broad edge, avoids flatness layer from removing.
In order to solve the above technical problems, the technical solution that this announcement embodiment provides is as follows:
According to this announcement embodiment in a first aspect, providing a kind of display panel, comprising:
Substrate, setting device layer on the substrate and
Flatness layer on the device layer is set,
Wherein, the display panel further includes color blocking layer, and the color blocking layer is arranged in the device layer and the flatness layer
Between.
According to one embodiment of this announcement, the color blocking layer is red color resistance, green color blocking or blue color blocking.
According to one embodiment of this announcement, the device layer is thin film transistor (TFT), including the first metal layer, gate insulating layer,
Second metal layer and passivation layer, the first metal layer are arranged on the substrate, and the gate insulating layer is arranged in institute
The first metal layer is stated on substrate and covers, the second metal layer is arranged on the gate insulating layer, described blunt
Change layer to be arranged on the gate insulating layer and cover the second metal layer.
According to one embodiment of this announcement, the first metal layer is the grid of the thin film transistor (TFT).
According to one embodiment of this announcement, the second metal layer further includes the source electrode and drain electrode of the thin film transistor (TFT).
According to one embodiment of this announcement, through-hole is provided in the first metal layer and the second metal layer.
According to one embodiment of this announcement, the surface of the first metal layer is arranged in the second metal layer, forms one
Overlaying structure.
According to the second aspect of this announcement, a kind of preparation method of display panel is additionally provided, is included the following steps,
S100: array architecture of thin film transistor and each film layer are set on substrate, and on the thin film transistor (TFT) array
Form passivation layer；
S101: a color blocking layer is set on the passivation layer；
S102: flatness layer is set in the color blocking layer, and through-hole is set on the corresponding position of the flatness layer；
S103: etching technics is used, the via regions are performed etching.
According to one embodiment of this announcement, in the step S101, the color blocking layer is red color resistance, green color blocking, blue
Any one in color blocking.
According to one embodiment of this announcement, in the step S103, using dry etch process, in the via regions
The color blocking and the passivation layer perform etching.
In conclusion this announcement embodiment has the beneficial effect that
This announcement provides the preparation method of a kind of new display panel and display panel, by by display panel display area
Red resistance, green resistance or blue delay the gate driving area for reaching surrounding, i.e., one is arranged between flatness layer and passivation layer
Color blocking, since the place mat of color blocking makes topography more flat, and then in planarization process, the film layer of formation is in metal line width
The stress of edge substantially reduce, solve the problems, such as that flatness layer is removed here, improve the electrical property and yield of product.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of announcement
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 for existing product design in each schematic diagram of a layer structure of display panel；
Fig. 2 is each schematic diagram of a layer structure of display panel in this announcement embodiment；
Fig. 3 is the display panel structure schematic diagram of another embodiment of this announcement；
Fig. 4 is neighboring area and the display area structural schematic diagram of the display panel in this announcement embodiment；
Fig. 5 is the display panel preparation flow figure of this announcement embodiment.
Specific embodiment
Below in conjunction with the attached drawing in this announcement embodiment, the technical solution in this announcement embodiment is carried out clear, complete
Site preparation description.Obviously, described embodiment is only this announcement a part of the embodiment, instead of all the embodiments.It is based on
Embodiment in this announcement, those skilled in the art's every other implementation obtained without creative efforts
Example belongs to the range of this announcement protection.
As LCD display panel develops to directions such as large scale, high-res, in design, panel itself will use one
The transparent organic insulation flatness layer of layer, to prevent interfering with each other for internal electric field.But as planarization layer, need in face of each
The bottom landform of the different complexity of kind.Specifically, as shown in fig. 1, Fig. 1 for existing product design in each layer structure of display panel show
It is intended to.Each layer of display panel includes substrate 100, and gate insulating layer 101 and the first metal layer on substrate 100 is arranged in
105, it further include second metal layer 104, passivation layer 102 and flatness layer 103.After above layers are provided on the substrate 100,
It will form a variety of step-like convex-concave labyrinths through 100 surface of the techniques such as over etching substrate, especially on the side of metal line width
At edge, i.e., at the protrusion " shoulder " of the first metal layer 105 or second metal layer 104.And finally flatness layer 103 is arranged at it
When upper, due at first edge area 106 and second edge area 107 there are biggish stress, flatness layer 103 it is easy to appear
The case where removing, and influence the electrical property and yield of product.
In this announcement embodiment, as shown in Fig. 2, each layer structure that Fig. 2 is the display panel in this announcement embodiment is shown
It is intended to.Each layer structure of display panel is broadly divided into the flatness layer on substrate, device layer and device layer.Specifically, the device
Part layer is thin film transistor (TFT) array, and display panel structure includes substrate 200,201 and of the gate insulating layer being arranged on substrate 200
The first metal layer 203, the passivation layer 202 being arranged on gate insulating layer 201 and second metal layer 204, color blocking layer 203 and
Flatness layer 206.Wherein, the gate insulating layer 201 covers the first metal layer 203, and passivation layer 202 covers second metal layer 204,
Color blocking layer 203 is arranged between passivation layer 202 and flatness layer 206.
The first metal layer 203 is the metal gates of the thin film transistor (TFT), further includes film in second metal layer 204
The metal source and metal-drain of transistor.
In the display panel of this announcement embodiment, color blocking layer 203 can for red (R) color blocking, green (G) color blocking and
Any one in blue (B) color blocking, due to being provided with color blocking layer 203 on passivation layer 202, color blocking layer 203 is by passivation layer 202
The convex-concave structure filling formed between the first metal layer 203, second metal layer 204 is smooth, then in the smooth color blocking layer
Flatness layer 206 is set on 203 upper surface, in this way, the first edge region 106 of the metal line width in Fig. 1, second edge region
107 are just not present, meanwhile, the landform between flatness layer 206 and substrate also becomes flat, and the contact between substrate is also more
Securely.
When device layer is arranged, due to including different structures, the first metal layer 203 and second in thin film transistor (TFT)
For metal layer 204 in wiring, there is single-layer metal structure and the overlaying structure of double-level-metal, double-level-metal overlaying structures
Second metal layer 204 is arranged in the surface of the first metal layer 203.
As shown in figure 3, Fig. 3 is the display panel structure schematic diagram of another embodiment of this announcement.The display panel packet
The gate insulating layer 301 of setting on the first metal layer is included, the passivation layer 302 on gate insulating layer 301 is set, setting exists
Color blocking layer 303 on passivation layer 302 and the flatness layer 304 that top layer is set.Due to first before making flatness layer 304
Provided with color blocking layer 303, color blocking layer 303 makes topography more flat, therefore, when making flatness layer 304, avoids flat
Layer 304 directly be in contact at metal edge, and then effectively improve the case where flatness layer is removed.
In the yellow light process developing process of flatness layer 304, it is also necessary to which open-celled structure is set in each film layer.Specifically,
Through-hole 305 is opened up on the first metal layer and second metal layer, through-hole 305 can be provided with the first metal layer, second metal layer
Middle position at, to facilitate the conducting of the circuit of subsequent arrangement.Each film layer structure passes through gluing, exposure, development and etching
Etc. techniques be made.
In specific product design, as shown in figure 4, Fig. 4 be this announcements embodiment display panel neighboring area and
Display area structural schematic diagram.Wherein, the primary structure of display panel includes passivation layer 402, is arranged on passivation layer 402
Color blocking layer 403 and the flatness layer 404 being arranged on color blocking layer 403.In this revealed embodiment, in preparation color blocking layer
When 403, color blocking layer 403 is not only set in the display area of display panel 405, while also in the neighboring area of panel 406,
The color blocking layer 403 is also provided in the gate driving circuit region of horizontal scanning line.In this way, since there is the pavings of color blocking layer 403
Pad, so that the topography of route is more flat, the influence so as to avoid stress at metal edge to flatness layer 404, Jin Ergai
The case where kind flatness layer 404 is removed.
This announcement also provides the preparation method of the display panel of this announcement embodiment.The preparation method is mainly each film layer
Preparation process flow, process flow chart as shown in figure 5, Fig. 5 be this announcement embodiment display panel preparation flow figure.Including such as
Lower step:
S100: array architecture of thin film transistor and each film layer are set on substrate, and on the thin film transistor (TFT) array
Form passivation layer.
Specifically, thin film transistor (TFT) includes the first metal gates, gate insulating layer, active layer, ohmic contact layer, second
Metal layer (metal source and metal-drain), above-mentioned each structure are respectively set according to the arragement construction of thin film transistor (TFT).In film
After transistor array is provided with, then a passivation layer is set；
S101: a color blocking layer is set on the passivation layer.
The color blocking layer is R color blocking, G color blocking, any one in B color blocking, and wherein color blocking layer extends to display panel week
The gate driving area enclosed.
S102: flatness layer is set in color blocking layer, and through-hole is set on the corresponding position of the flatness layer.
S103: finally, using etching technics, the via regions are performed etching.
Etching technics can be dry etch process, to the color blocking layer and passivation layer even gate insulator in via regions
Layer is performed etching according to required structure, forms via hole.Finally, transparent pixel electrode layer is re-formed.
The preparation method of a kind of display panel and display panel provided by this announcement embodiment has been carried out in detail above
It introduces, the technical solution and its core concept of this announcement that the above embodiments are only used to help understand；This field it is general
Lead to technical staff it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, and these are repaired
Change or replace, it does not separate the essence of the corresponding technical solution, and this discloses the range of the technical solution of each embodiment.
Claims (10)
1. a kind of display panel characterized by comprising
Substrate, setting device layer on the substrate and
Flatness layer on the device layer is set,
Wherein, the display panel further includes color blocking layer, and the color blocking layer is arranged between the device layer and the flatness layer.
2. display panel according to claim 1, which is characterized in that the color blocking layer be red color resistance, green color blocking or
Person's blue color blocking.
3. display panel according to claim 1, which is characterized in that the device layer is thin film transistor (TFT), including first
Metal layer, gate insulating layer, second metal layer and passivation layer, the first metal layer is arranged on the substrate, described
Gate insulating layer is arranged on the substrate and covers the first metal layer, and the second metal layer is arranged in the grid
On insulating layer, the passivation layer is arranged on the gate insulating layer and covers the second metal layer.
4. display panel according to claim 3, which is characterized in that the first metal layer is the thin film transistor (TFT)
Grid.
5. display panel according to claim 3, which is characterized in that the second metal layer further includes the film crystal
The source electrode and drain electrode of pipe.
6. display panel according to claim 3, which is characterized in that on the first metal layer and the second metal layer
It is provided with through-hole.
7. display panel according to claim 2, which is characterized in that the second metal layer is arranged in first metal
The surface of layer forms overlaying structure.
8. a kind of preparation method of display panel, which comprises the steps of:
S100: array architecture of thin film transistor and each film layer are set on substrate, and formed on the thin film transistor (TFT) array
Passivation layer；
S101: color blocking layer is set on the passivation layer；
S102: flatness layer is set in the color blocking layer, and through-hole is set on the corresponding position of the flatness layer；
S103: etching technics is used, the region of the through-hole is performed etching.
9. the preparation method of display panel according to claim 8, which is characterized in that the color blocking layer be red color resistance,
Any one in green color blocking, blue color blocking.
10. the preparation method of display panel according to claim 8, which is characterized in that in the step S103, using dry
Method etching technics, on the region of the through-hole the color blocking and the passivation layer perform etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910280408.1A CN109991789A (en) | 2019-04-09 | 2019-04-09 | Display panel and display panel preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910280408.1A CN109991789A (en) | 2019-04-09 | 2019-04-09 | Display panel and display panel preparation method |
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| CN109991789A true CN109991789A (en) | 2019-07-09 |
Family
ID=67132670
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910280408.1A Pending CN109991789A (en) | 2019-04-09 | 2019-04-09 | Display panel and display panel preparation method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338143A (en) * | 2020-04-14 | 2020-06-26 | Tcl华星光电技术有限公司 | Liquid crystal display panel |
| CN113745244A (en) * | 2021-07-30 | 2021-12-03 | 惠科股份有限公司 | Array substrate, preparation method of array substrate and display screen |
| CN114428427A (en) * | 2022-01-27 | 2022-05-03 | Tcl华星光电技术有限公司 | Display panel and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104730759A (en) * | 2015-02-25 | 2015-06-24 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
| CN105807516A (en) * | 2015-01-21 | 2016-07-27 | 苹果公司 | Low-flicker liquid crystal display |
-
2019
- 2019-04-09 CN CN201910280408.1A patent/CN109991789A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105807516A (en) * | 2015-01-21 | 2016-07-27 | 苹果公司 | Low-flicker liquid crystal display |
| CN104730759A (en) * | 2015-02-25 | 2015-06-24 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338143A (en) * | 2020-04-14 | 2020-06-26 | Tcl华星光电技术有限公司 | Liquid crystal display panel |
| CN111338143B (en) * | 2020-04-14 | 2023-02-07 | Tcl华星光电技术有限公司 | Liquid crystal display panel |
| CN113745244A (en) * | 2021-07-30 | 2021-12-03 | 惠科股份有限公司 | Array substrate, preparation method of array substrate and display screen |
| CN113745244B (en) * | 2021-07-30 | 2022-10-21 | 惠科股份有限公司 | Array substrate, preparation method of array substrate and display screen |
| CN114428427A (en) * | 2022-01-27 | 2022-05-03 | Tcl华星光电技术有限公司 | Display panel and display device |
| CN114428427B (en) * | 2022-01-27 | 2023-10-03 | Tcl华星光电技术有限公司 | Display panel and display device |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20190709 |
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