CN109979918A - Electro-migration testing structure and its test method - Google Patents
Electro-migration testing structure and its test method Download PDFInfo
- Publication number
- CN109979918A CN109979918A CN201910249284.0A CN201910249284A CN109979918A CN 109979918 A CN109979918 A CN 109979918A CN 201910249284 A CN201910249284 A CN 201910249284A CN 109979918 A CN109979918 A CN 109979918A
- Authority
- CN
- China
- Prior art keywords
- test
- electro
- migration testing
- test structure
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a kind of electro-migration testing structure for integrated circuit electro-migration testing, the electro-migration testing structure includes the first test structure and the second test structure；The first test structure is fixedly connected with the second test structure, and the first test structure other end connects the first test lead, and the first test structure other end connects the second test lead；Wherein, the width of the first test structure tests the width of structure less than second, and the width of the first test structure described in 5W1≤W2, W1, and W2 is the width of the second test structure.The invention also discloses a kind of electro-migration testing methods using above-mentioned electro-migration testing structure.Electro-migration testing structure of the invention can contain electromigration backflow phenomenon, moreover it is possible to reduce the area of test structure, while guarantee electro-migration testing effect.
Description
Technical field
The present invention relates to integrated circuit fields, more particularly to a kind of integrated circuit electro-migration testing structure.The present invention is also
It is related to a kind of integrated circuit electro-migration testing method.
Background technique
Electromigration typically refers to make metal ion under electric field action that there is a phenomenon where migrate.Respectively occur to lead adjacent
The metallization electron transfer such as common silver ion migration and generation inside metallic conductor in body surface face.ELECTROMIGRATION PHENOMENON is collection
At phenomenon peculiar in circuit, integrated circuit metal interconnection line is referred to when electric current flows through, since metallic atom and electronics have
Energy exchange, to pushed away from original position.After a large amount of metallic atoms are pushed away from, a cavity is just left, causes metal mutual
The resistance of line becomes larger, IC chip failure.
In order to test the electric migration performance of metal interconnecting wires, need to design corresponding electro-migration testing structure.Due to when electricity
Migration test metal wire too in short-term (< 50um), has backflow effeet (after the metallic atom on cathode is pulled on anode, on anode
Metal atom density be higher than cathode density, cause to have metallic atom diffusion under density gradient, cause with electromigration
Metallic atom drift bearing it is opposite), therefore suggest that the length of test metal wire is 400um in JEDEC, have in actual use
Company can be designed as 200um.Cause the test structure length of electromigration to be naturally larger than 200um, occupies biggish space.
Summary of the invention
It not only can be reduced test structure occupied space the technical problem to be solved in the present invention is to provide a kind of, but also be avoided that reflux
The electro-migration testing structure of effect.
The present invention also provides a kind of electro-migration testing methods using above-mentioned electro-migration testing structure.
In order to solve the above technical problems, the present invention is provided to the electro-migration testing structure of integrated circuit electro-migration testing,
The electro-migration testing structure includes the first test structure A and the second test structure B；The first test structure A and second is surveyed
Examination structure B is fixedly connected, and the first test structure A other end the first test lead of connection A1, the first test structure B are another
One end connects the second test lead B1；Wherein,
Width of the width of the first test structure A less than the second test structure B, and the first survey described in 5W1≤W2, W1
The width of structure A is tried, W2 is the width of the second test structure B.
It is further improved the electro-migration testing structure, the width of the first test structure A is IC design
The minimum widith allowed in rule.
It is further improved the electro-migration testing structure, the length of the first test structure A and the second test structure B
It is different.
It is further improved the electro-migration testing structure, the length of the first test structure A and the second test structure B
Respectively less than 50um.
It is further improved the electro-migration testing structure, the length of the second test structure B is less than 50um and is greater than
10um。
It is further improved the electro-migration testing structure, the first test structure A and the second test lead B1 load
Voltage is different.
It is further improved the electro-migration testing structure, V1 < V2, V1 are the first test structure A on-load voltages, and V2 is
Second test lead B1 on-load voltage.
It is further improved the electro-migration testing structure, the first test structure A and the second test structure B are bondings
Gold thread or bonding silver wire.
It is further improved the electro-migration testing structure, the first test structure A and the second test structure B are metals
Line.
The present invention provides a kind of electro-migration testing method using electro-migration testing structure described in above-mentioned any one, packet
It includes:
By the first test structure A connection the first test lead A1, the first test structure B connection second is tested
Lead B1 loads different voltages to the first test structure A and the second test lead B1, according to the first test lead A1 and the
Whether resistance variations interpretation occurs electromigration invalidation between two test lead B1.
It is further improved the electro-migration testing method, is loaded after keeping electric current to stablize after different voltages, then measures the
Resistance between one test lead A1 and the second test lead B1.
It is further improved the electro-migration testing method, the first test structure A on-load voltage is less than the second test
Lead B1 on-load voltage.
The present invention contains that the reflux of electromigration is existing by the electro-migration testing structure that differs greatly of design two-end structure width
As.Due to the width difference of the first test structure A and the second test structure B, lead to the metallic atom quilt in the first test structure A
It shifts onto after the second test structure B, the change of order of magnitude rank is had no to the metal atom density of the second test structure B, thus
It can contain the backflow phenomenon of electromigration.The area that also can be reduced test structure using test structure of the invention, is guaranteed simultaneously
Electro-migration testing effect.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 is existing electro-migration testing structure schematic diagram.
Fig. 2 is the structural schematic diagram of first embodiment of the invention.
Description of symbols
A is existing test structure
B is contact hole
First test structure A
Second test structure B
First test lead A1
Second test lead B1
Specific embodiment
Illustrate embodiments of the present invention below by way of particular specific embodiment, those skilled in the art can be by this explanation
Book disclosure of that is fully understood from other advantages and technical effect of the invention.The present invention can also be by different specific
Embodiment is embodied or practiced, and the various details in this specification can also be applied based on different viewpoints, is not having
Various modifications or alterations are carried out under total mentality of designing away from inventing.It should be noted that in the absence of conflict, implementing below
Feature in example and embodiment can be combined with each other.
As shown in Fig. 2, the present invention is provided to the electro-migration testing structure first embodiment of integrated circuit electro-migration testing,
The electro-migration testing structure includes the first test structure A and the second test structure B；The first test structure A and second is surveyed
Examination structure B is fixedly connected, and the first test structure A other end the first test lead of connection A1, the first test structure B are another
One end connects the second test lead B1；Wherein, the first test structure A's and the second test structure B is of different size, and 5W1≤
The width of first test structure A described in W2, W1, W2 is the width of the second test structure B.Wherein, described first test structure A's
Width is the minimum widith allowed in IC design rule.V1 < V2, V1 are the first test structure A on-load voltages, and V2 is
Second test lead B1 on-load voltage.
The present invention is provided to the electro-migration testing structure second embodiment of integrated circuit electro-migration testing, the electromigration
Testing structure includes the first test structure A and the second test structure B；The first test structure A and the second test structure B are fixed
Connection, the first test lead A1 of the first test structure A other end connection, the first test structure B other end connection the
Two test lead B1；Wherein, the width of the first test structure A and the second test structure B and length difference, 6W1=W2, W1
The width of the first test structure A, W2 is the width of the second test structure B.Wherein, the width of the first test structure A
It is the minimum widith allowed in IC design rule.
Wherein, the first test structure A length is less than 50um, such as the first test structure A length is 10um, and described the
The length of two test structure B is less than 50um and is greater than 10um, such as the second test structure B length is 15um.
V1 < V2, V1 are the first test structure A on-load voltages, and V2 is the second test lead B1 on-load voltage.
Described first in above-mentioned electro-migration testing structure first embodiment and electro-migration testing structure second embodiment surveys
Trying the test of structure A and second structure B can be using bonding gold thread, bonding silver wire or metal wire.
The present invention provides a kind of electro-migration testing method using electro-migration testing structure described in above-mentioned any one, packet
It includes:
By the first test structure A connection the first test lead A1, the first test structure B connection second is tested
Lead B1 loads different voltages to the first test structure A and the second test lead B1, according to the first test lead A1 and the
Whether resistance variations interpretation occurs electromigration invalidation between two test lead B1.
After keeping electric current to stablize after load different voltages, then measure between the first test lead A1 and the second test lead B1
Resistance.Wherein the first test structure A on-load voltage is less than the second test lead B1 on-load voltage.
Above by specific embodiment and embodiment, invention is explained in detail, but these are not composition pair
Limitation of the invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Into these also should be regarded as protection scope of the present invention.
Claims (12)
1. a kind of electro-migration testing structure, is used for integrated circuit electro-migration testing, the electro-migration testing structure includes the first survey
Try structure (A) and the second test structure (B)；First test structure (A) is fixedly connected with the second test structure (B), described
First test structure (A) other end connection the first test lead (A1), the first test structure (B) other end connection second are surveyed
It tries lead (B1)；It is characterized by:
The width of first test structure (A) tests the width of structure (B), and the first survey described in 5W1≤W2, W1 less than second
The width of structure (A) is tried, W2 is the width of the second test structure (B).
2. electro-migration testing structure as described in claim 1, it is characterised in that: it is described first test structure (A) width be
The minimum widith allowed in IC design rule.
3. electro-migration testing structure as described in claim 1, it is characterised in that: first test structure (A) and second is surveyed
The length for trying structure (B) is different.
4. electro-migration testing structure as described in claim 1, it is characterised in that: first test structure (A) and second is surveyed
The length of examination structure (B) is respectively less than 50um.
5. electro-migration testing structure as claimed in claim 4, it is characterised in that: the length of second test structure (B) is small
In 50um and it is greater than 10um.
6. electro-migration testing structure as described in claim 1, it is characterised in that: first test structure (A) and second is surveyed
It is different to try lead (B1) on-load voltage.
7. electro-migration testing structure as described in claim 1, it is characterised in that: V1 < V2, V1 are that the first test structure (A) adds
Voltage is carried, V2 is the second test lead (B1) on-load voltage.
8. electro-migration testing structure as described in claim 1, it is characterised in that: first test structure (A) and second is surveyed
Examination structure (B) is bonding gold thread or bonding silver wire.
9. electro-migration testing structure as described in claim 1, it is characterised in that: first test structure (A) and second is surveyed
Trying structure (B) is metal wire.
10. a kind of electro-migration testing method using electro-migration testing structure described in claim 1-9 any one, feature exist
In, comprising:
By first test structure (A) connection the first test lead (A1), the first test structure (B) connection second is surveyed
It tries lead (B1), different voltages is loaded to first test structure (A) and the second test lead (B1), are drawn according to the first test
Whether resistance variations interpretation occurs electromigration invalidation between line (A1) and the second test lead (B1).
11. electro-migration testing method as claimed in claim 10, it is characterised in that: keep electric current to stablize after load different voltages
Afterwards, then resistance between the first test lead (A1) and the second test lead (B1) is measured.
12. electro-migration testing method as claimed in claim 10, it is characterised in that: the first test structure (A) load electricity
Pressure is less than the second test lead (B1) on-load voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249284.0A CN109979918A (en) | 2019-03-29 | 2019-03-29 | Electro-migration testing structure and its test method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249284.0A CN109979918A (en) | 2019-03-29 | 2019-03-29 | Electro-migration testing structure and its test method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109979918A true CN109979918A (en) | 2019-07-05 |
Family
ID=67081642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910249284.0A Pending CN109979918A (en) | 2019-03-29 | 2019-03-29 | Electro-migration testing structure and its test method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109979918A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11121574A (en) * | 1997-10-15 | 1999-04-30 | Oki Electric Ind Co Ltd | Test wiring pattern for semiconductor device, and its test method |
| KR20010063430A (en) * | 1999-12-22 | 2001-07-09 | 박종섭 | A metal line electromigration test pattern in a semiconductor device and Method of testing the same |
| KR20020087745A (en) * | 2001-05-16 | 2002-11-23 | 한국과학기술연구원 | Method for destructive strength test of thin film |
| CN103811467A (en) * | 2012-11-15 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Electromigration test structure and method |
| CN105118798A (en) * | 2015-08-26 | 2015-12-02 | 上海华力微电子有限公司 | Electromigration test structure and test method |
| CN105808807A (en) * | 2014-12-31 | 2016-07-27 | 新思科技有限公司 | Electro-migration verification for advanced semiconductor technology |
| CN107403788A (en) * | 2016-05-18 | 2017-11-28 | 无锡华润上华科技有限公司 | Leakage current test structure and method between metal interconnecting wires |
-
2019
- 2019-03-29 CN CN201910249284.0A patent/CN109979918A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11121574A (en) * | 1997-10-15 | 1999-04-30 | Oki Electric Ind Co Ltd | Test wiring pattern for semiconductor device, and its test method |
| KR20010063430A (en) * | 1999-12-22 | 2001-07-09 | 박종섭 | A metal line electromigration test pattern in a semiconductor device and Method of testing the same |
| KR20020087745A (en) * | 2001-05-16 | 2002-11-23 | 한국과학기술연구원 | Method for destructive strength test of thin film |
| CN103811467A (en) * | 2012-11-15 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Electromigration test structure and method |
| CN105808807A (en) * | 2014-12-31 | 2016-07-27 | 新思科技有限公司 | Electro-migration verification for advanced semiconductor technology |
| CN105118798A (en) * | 2015-08-26 | 2015-12-02 | 上海华力微电子有限公司 | Electromigration test structure and test method |
| CN107403788A (en) * | 2016-05-18 | 2017-11-28 | 无锡华润上华科技有限公司 | Leakage current test structure and method between metal interconnecting wires |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102655137B (en) | Electromigration test structure | |
| US20180059140A1 (en) | Probe device of vertical probe card | |
| TWI282423B (en) | Probe card | |
| CN100565231C (en) | Testing apparatus | |
| CN204720446U (en) | Electro-migration testing structure | |
| CN102446900A (en) | Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires | |
| CN203631539U (en) | Through silicon via testing structure | |
| US20070138511A1 (en) | High current interconnect structure for IC memory device programming | |
| DE102008050852A1 (en) | Semiconductor device with sealing resin portion | |
| CN112798867B (en) | Base for realizing combined quantum Hall resistance sample | |
| US6725433B1 (en) | Method for assessing the reliability of interconnects | |
| CN109979918A (en) | Electro-migration testing structure and its test method | |
| KR101260135B1 (en) | Silver alloy having excellent contact resistance and antifouling property and suitable for use in probe pin | |
| CN103811467A (en) | Electromigration test structure and method | |
| CN103094255B (en) | Interconnect electromigratory test structure | |
| CN105277864B (en) | Experimental rig, test method and the hookup of semiconductor chip | |
| CN205248238U (en) | Reliability test structure | |
| CN101566667B (en) | MOS component testing method | |
| US20020105349A1 (en) | Method and apparatus for testing electronic devices | |
| CN101375384A (en) | Production of integrated circuits comprising different components | |
| CN104835802A (en) | Electro-Migration structure and EM test method | |
| CN212540578U (en) | Test structure | |
| CN201022075Y (en) | Testing structure for electronic migration rate | |
| US20140167043A1 (en) | Semiconductor device and method for manufacturing a semiconductor device | |
| CN108428639A (en) | A method of realizing that integrated circuitry lines are opened a way to short-circuit transition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190705 |
|
| RJ01 | Rejection of invention patent application after publication |