CN204720446U - Electro-migration testing structure - Google Patents
Electro-migration testing structure Download PDFInfo
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- CN204720446U CN204720446U CN201520408049.0U CN201520408049U CN204720446U CN 204720446 U CN204720446 U CN 204720446U CN 201520408049 U CN201520408049 U CN 201520408049U CN 204720446 U CN204720446 U CN 204720446U
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Abstract
The utility model proposes a kind of electro-migration testing structure, comprise multiple identical test cell, many there is the metal connecting line of PN junction, multiple perception test dish, the two ends of test cell are connected with perception test dish respectively by metal connecting line, form many test loops, when making wherein a part of test loop conducting, the test loop of remainder turns off.The utility model adopts the metal connecting line with PN junction to form many test loops, and by means of the one-way conduction performance of PN junction, when making a part of test loop conducting, another part test loop turns off; When carrying out electro-migration testing to the test loop of conducting, because all the other test loops turn off, then can carry out stress migration test to the test loop turned off, judged whether to compensate electro-migration testing by stress migration test result, get rid of the interference that stress migration causes electro-migration testing, improve the precision of test electro-migration testing.
Description
Technical field
The utility model relates to field of semiconductor manufacture, particularly relates to a kind of electro-migration testing structure.
Background technology
Semiconductor device, after preparation completes, needs to carry out multiple test with the performance of monitoring devices usually.Wherein, electromigration (EM:Electro Migration) is one of big event of semiconductor aluminum manufacturing procedure or copper wiring technique back segment reliability assessment.Electromigration refers at a certain temperature, applies certain electric current in a metal, and electronics directed movement forms " electron wind ", promotes metal atoms migrate in metal interconnecting wires or through hole, forms the physical phenomenon of cavity or protuberance in a metal.The cavity that electromigration is formed or protuberance arrive and to a certain degree just make metal interconnecting wires generation open circuit in integrated circuit or short circuit, cause inefficacy.
Concrete, please refer to Fig. 1, electro-migration testing structure in prior art, comprising: first applies end (Force) 11, second applies end 12, first perception end (Sense) 13, second perception end 14, metal wire to be measured 20, annular metal cord 30 and annular metal cord test lead 31.Wherein, the two ends of described metal wire 20 to be measured are applied end 11 and second respectively and apply end 12 and be connected by through hole line 21 with described first, described first perception end 13 and first applies end 11 and is connected, and described second perception end 14 and the second applying end 12 are connected.
In the prior art, four-end method usually can be adopted to carry out electro-migration testing.The electromigration lifetime of metal wire 20 to be measured is assessed by the resistance of four-end method measurement electro-migration testing structure, its shortcoming is according to design rule (Design rule), the width of the first applying end 11 and the second applying end 12 is wider than the width of metal wire to be measured, and be interconnected by through hole line 21 between them, there is the less through hole line 21 of size and drop on the situation that larger-size first applies end 11 and the second applying end 12, and electro-migration testing is in order to reduce the impact of electric current Joule heat as far as possible, high-temperature baking can be used, the temperature range of usual baking is at 200 ~ 350 degrees Celsius, high-temperature baking causes stress migration effect possibility highly significant, affect electromigratory test accuracy.
Described stress migration (SM:Stress Migration) is also one of big event of semiconductor aluminum bronze making technology back segment reliability assessment.Stress migration is at a certain temperature, and because metal interconnection cause metal different from its surrounding insulation material thermal expansion factor is subject to stress, the place that in metal, crystal grain space is concentrated to stress under effect of stress is collected, thus forms the physical phenomenon in cavity in a metal.The cavity that stress migration is formed arrives and the metal interconnecting wires in integrated circuit to a certain degree just can be made to open a way, and causes inefficacy.
As described above, in electro-migration testing, high-temperature baking temperature is usually at 200 ~ 350 degrees Celsius, and stress migration inevitably occurs.And in the design of existing electro-migration testing structure, do not consider the situation of stress migration will certainly affect the accuracy of test result.
Utility model content
The purpose of this utility model is to provide a kind of electro-migration testing structure, can while carrying out electro-migration testing, and counter stress migration is also tested, thus is conducive to compensating electromigration, improves measuring accuracy.
To achieve these goals, the utility model proposes a kind of electro-migration testing structure, comprise: multiple identical test cell, many there is the metal connecting line of PN junction, multiple perception test dish, wherein, the two ends of each described test cell are all connected with described perception test dish respectively by described metal connecting line, form many test loops, wherein during a part of test loop conducting, the test loop of remainder turns off.
Optionally, in described electro-migration testing structure, described test cell comprises: first applies end, second applies end and metal wire to be measured, and wherein, the two ends of described metal wire to be measured are applied with described first respectively to hold to apply to hold with second and are connected by through hole line.
Optionally, in described electro-migration testing structure, described first applies end and second applies lower one deck that end is positioned at described metal wire to be measured.
Optionally, in described electro-migration testing structure, described first applies end and second applies the last layer that end is positioned at described metal wire to be measured.
Optionally, in described electro-migration testing structure, the length of described metal wire to be measured is 400 μm.
Optionally, in described electro-migration testing structure, the described first width applying end and the second applying end is 5 times of described metal line-width to be measured.
Optionally, in described electro-migration testing structure, the number of described test cell is 2, is respectively the first test cell and the second test cell.
Optionally, in described electro-migration testing structure, the number of described perception test dish is 2, is respectively the first perception test dish and the second perception test dish.
Optionally, in described electro-migration testing structure, described first perception test dish and described first applies to hold and is connected, and described second perception test dish and described second applies to hold and is connected.
Optionally, in described electro-migration testing structure, also comprise the first applying test panel and second and apply test panel, described first applies test panel is electrically connected with described first perception test dish, and described second applies test panel is electrically connected with described second perception test dish.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: adopt the metal connecting line with PN junction to form many test loops, and by means of the one-way conduction performance of PN junction, when making a part of test loop conducting, another part test loop turns off; When carrying out electro-migration testing to the test loop of conducting, because all the other test loops turn off, then can carry out stress migration test to the test loop turned off, judged whether to compensate electro-migration testing by stress migration test result, get rid of the interference that stress migration causes electro-migration testing, improve the precision of electro-migration testing.
Accompanying drawing explanation
Fig. 1 is electro-migration testing structure schematic diagram in prior art;
Fig. 2 is the structured flowchart of electro-migration testing structure in the utility model one embodiment;
Fig. 3 is the concrete structure schematic diagram of electro-migration testing structure in the utility model one embodiment.
Embodiment
Below in conjunction with schematic diagram, electro-migration testing structure of the present utility model is described in more detail, which show preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the utility model chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the utility model is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
Please refer to Fig. 2, in the present embodiment, propose a kind of electro-migration testing structure, comprising: multiple identical test cell, many there is the metal connecting line of PN junction, multiple perception test dish.
In the present embodiment, test cell is 2, is respectively the first test cell and the second test cell; The number of perception test dish is also 2, is respectively the first perception test dish S1 and the second perception test dish S2; The two ends of each described test cell are connected with two perception test dishes respectively by described metal connecting line, form many test loops, and when making wherein a part of test loop conducting, the test loop of remainder turns off.
Particularly, the two ends of the first test cell are connected with the second perception test dish S2 with described first perception test dish S1 respectively by the metal connecting line with PN junction, same, the two ends of the second test cell are connected with the second perception test dish S2 with described first perception test dish S1 respectively by the metal connecting line with PN junction, thus constitute two test loops.It is pointed out that the guiding that should control metal connecting line PN junction, to guarantee that when the first test loop conducting, the second test loop is in the state of shutoff; When the second test loop conducting, guarantee that the first test loop is in off state.
In addition, electro-migration testing structure also comprises the first applying test panel F1 and second and applies test panel F2, and described first applies test panel F1 is electrically connected with described first perception test dish S1, and described second applies test panel F2 is electrically connected with described second perception test dish S2.
Concrete, please refer to Fig. 3, in the present embodiment, because described first test cell is all identical with the second test cell, at this only using the first test cell as description, described first test cell 100 comprises: first applies end 110, second applies end 120 and metal wire to be measured 130, and wherein, the two ends of described metal wire 130 to be measured apply end 110 and second respectively and apply end 120 and pass through through hole line 140 and be connected with described first.
In the present embodiment, the length L of described metal wire to be measured 200 is 400 μm, described first 5 times of applying that end 110 and the second width W 2 applying end 120 are described metal wire to be measured 130 width W 1, what adopt that this kind of size design can be better carries out electro-migration testing.
Described first perception test dish S1 and described first applies end 110 and is connected, such as described first perception test dish S1 and described first is applied end 110 and is connected by the first PN junction plain conductor 310, described second perception test dish S2 and described second is applied end 120 and is connected by the first PN junction plain conductor 320, and the plain conductor 320 of described first PN junction plain conductor 310 and the second PN junction is contrary, the PN junction guiding of such as the first PN junction plain conductor 310 applies end 110 conducting by the first perception test dish S1 to first, the PN junction guiding of the second PN junction plain conductor 320 is then apply end 120 to the second perception test dish S2 conducting by second.Same, described second test cell is identical with the connected mode of described first test cell with the connected mode of the second perception test dish S2 with described first perception test dish S1, and therefore not to repeat here.
Described first applies end 110 and second applies lower floor's (being called Upstream test structure) that end 120 is positioned at described metal wire to be measured 130; Described first applies end 110 and second applies the upper strata (being called Downstream test structure) that end 120 is positioned at described metal wire to be measured 130, that is can be applied in different test modes.
The electro-migration testing structure that the utility model proposes can substitute electro-migration testing structure of the prior art, can not take the valuable area on wafer more, also can not increase cost of manufacture; And adopt symmetric design, multiple test cell can each other (Backup) for subsequent use; When not needing to consider stress migration effect, when one of them test cell does not work, another test cell can substitute, and spendable test structure quantity is double, can select flexibly, improves the utilance of wafer.In addition, the electro-migration testing structure that the utility model proposes considers stress migration effect in electro-migration testing, the test result of rectifiable electro-migration testing, makes the test result of electro-migration testing more accurate.
When testing, the cut-in voltage with the metal connecting line of PN junction is U1, according to the unilateral conduction of PN junction, such as, select to apply test panel F1 first and add positive voltage, second applies test panel F2 ground connection, first test cell can conducting, carries out normal electro-migration testing; Second test cell then can carry out the test of stress migration.Electro-migration testing mode is identical with of the prior art, and therefore not to repeat here.
The mode that stress migration compensates electro-migration testing is as follows: the metal wire to be measured initial resistance when room temperature first measured before electro-migration testing as stress migration test is R0, after electro-migration testing terminates, return to room temperature again measure its resistance and be designated as Rn, calculate the side-play amount R of resistance
shift=(Rn-R0)/R0, if R
shift>=1%, then revise electromigratory test result, the electromigratory test failure time does corresponding increase according to the R-T curve of tester table; If R
shift<1%, then the stress migration effect in electro-migration testing can be ignored.
To sum up, in the electro-migration testing structure that the utility model embodiment provides, adopt the metal connecting line with PN junction to form many test loops, by means of the one-way conduction performance of PN junction, when making a part of test loop conducting, another part test loop turns off; When carrying out electro-migration testing to the test loop of conducting, because all the other test loops turn off, then can carry out stress migration test to the test loop turned off, judged whether to compensate electro-migration testing by stress migration test result, get rid of the interference that stress migration causes electro-migration testing, improve the precision of test electro-migration testing.
Above are only preferred embodiment of the present utility model, any restriction is not played to the utility model.Any person of ordinary skill in the field; not departing from the scope of the technical solution of the utility model; the technical scheme disclose the utility model and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from the technical solution of the utility model, still belong within protection range of the present utility model.
Claims (10)
1. an electro-migration testing structure, it is characterized in that, comprise: multiple identical test cell, many there is the metal connecting line of PN junction, multiple perception test dish, wherein, the two ends of each described test cell are all connected with described perception test dish respectively by described metal connecting line, form many test loops, wherein during a part of test loop conducting, the test loop of remainder turns off.
2. electro-migration testing structure as claimed in claim 1, it is characterized in that, described test cell comprises: first applies end, second applies end and metal wire to be measured, and wherein, the two ends of described metal wire to be measured are applied with described first respectively to hold to apply to hold with second and are connected by through hole line.
3. electro-migration testing structure as claimed in claim 2, is characterized in that, described first applies end and second applies lower one deck that end is positioned at described metal wire to be measured.
4. electro-migration testing structure as claimed in claim 2, is characterized in that, described first applies end and second applies the last layer that end is positioned at described metal wire to be measured.
5. the electro-migration testing structure as described in claim 3 or 4, is characterized in that, the length of described metal wire to be measured is 400 μm.
6. electro-migration testing structure as claimed in claim 5, is characterized in that, the described first width applying end and the second applying end is 5 times of described metal line-width to be measured.
7. electro-migration testing structure as claimed in claim 6, it is characterized in that, the number of described test cell is 2, is respectively the first test cell and the second test cell.
8. electro-migration testing structure as claimed in claim 7, it is characterized in that, the number of described perception test dish is 2, is respectively the first perception test dish and the second perception test dish.
9. electro-migration testing structure as claimed in claim 8, it is characterized in that, described first perception test dish and described first applies to hold and is connected, and described second perception test dish and described second applies to hold and is connected.
10. electro-migration testing structure as claimed in claim 9, it is characterized in that, also comprise the first applying test panel and second and apply test panel, described first applies test panel is electrically connected with described first perception test dish, and described second applies test panel is electrically connected with described second perception test dish.
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| CN201520408049.0U CN204720446U (en) | 2015-06-12 | 2015-06-12 | Electro-migration testing structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449462A (en) * | 2016-11-17 | 2017-02-22 | 上海华力微电子有限公司 | Electromigration test structure |
| CN106505054A (en) * | 2016-11-30 | 2017-03-15 | 上海华力微电子有限公司 | A kind of test structure of semiconductor crystal wafer |
| CN106876366A (en) * | 2015-12-11 | 2017-06-20 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor test structure and stress migration test method |
| CN109841535A (en) * | 2019-01-31 | 2019-06-04 | 合肥鑫晟光电科技有限公司 | Array substrate and preparation method thereof, display panel, display device |
| CN111007387A (en) * | 2019-12-07 | 2020-04-14 | 苏州容启传感器科技有限公司 | Test chip and integration method |
| CN113030685A (en) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | Semiconductor electromigration test circuit and test method |
| WO2021196988A1 (en) * | 2020-04-03 | 2021-10-07 | 长鑫存储技术有限公司 | Test circuit and semiconductor testing method |
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2015
- 2015-06-12 CN CN201520408049.0U patent/CN204720446U/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876366A (en) * | 2015-12-11 | 2017-06-20 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor test structure and stress migration test method |
| CN106876366B (en) * | 2015-12-11 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor test structure and stress migration test method |
| CN106449462A (en) * | 2016-11-17 | 2017-02-22 | 上海华力微电子有限公司 | Electromigration test structure |
| CN106505054A (en) * | 2016-11-30 | 2017-03-15 | 上海华力微电子有限公司 | A kind of test structure of semiconductor crystal wafer |
| CN109841535A (en) * | 2019-01-31 | 2019-06-04 | 合肥鑫晟光电科技有限公司 | Array substrate and preparation method thereof, display panel, display device |
| CN109841535B (en) * | 2019-01-31 | 2022-04-15 | 合肥鑫晟光电科技有限公司 | Array substrate, preparation method thereof, display panel and display device |
| US11631619B2 (en) | 2019-01-31 | 2023-04-18 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Array substrate and fabricating method thereof, display panel and display device |
| CN111007387A (en) * | 2019-12-07 | 2020-04-14 | 苏州容启传感器科技有限公司 | Test chip and integration method |
| WO2021196988A1 (en) * | 2020-04-03 | 2021-10-07 | 长鑫存储技术有限公司 | Test circuit and semiconductor testing method |
| US11860217B2 (en) | 2020-04-03 | 2024-01-02 | Changxin Memory Technologies, Inc. | Test circuits and semiconductor test methods |
| CN113030685A (en) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | Semiconductor electromigration test circuit and test method |
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