CN109971358A - 一种化学机械抛光液 - Google Patents
一种化学机械抛光液 Download PDFInfo
- Publication number
- CN109971358A CN109971358A CN201711439627.7A CN201711439627A CN109971358A CN 109971358 A CN109971358 A CN 109971358A CN 201711439627 A CN201711439627 A CN 201711439627A CN 109971358 A CN109971358 A CN 109971358A
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing liquid
- polishing
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 94
- 239000007788 liquid Substances 0.000 title claims abstract description 36
- 239000000126 substance Substances 0.000 title claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 239000006061 abrasive grain Substances 0.000 claims abstract description 12
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 12
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 12
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 12
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 8
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 8
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 3
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 3
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims 1
- 239000001913 cellulose Substances 0.000 claims 1
- 229920002678 cellulose Polymers 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 abstract description 32
- 239000012530 fluid Substances 0.000 abstract description 31
- 238000000034 method Methods 0.000 description 9
- 239000002002 slurry Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229940075614 colloidal silicon dioxide Drugs 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920005682 EO-PO block copolymer Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CASPZMCSNJZQMV-UHFFFAOYSA-N ethane;2-methyloxirane Chemical compound CC.CC1CO1 CASPZMCSNJZQMV-UHFFFAOYSA-N 0.000 description 1
- 230000000855 fungicidal effect Effects 0.000 description 1
- 239000000417 fungicide Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000013097 stability assessment Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711439627.7A CN109971358A (zh) | 2017-12-27 | 2017-12-27 | 一种化学机械抛光液 |
| PCT/CN2018/124057 WO2019129107A1 (fr) | 2017-12-27 | 2018-12-26 | Solution de polissage mécano-chimique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711439627.7A CN109971358A (zh) | 2017-12-27 | 2017-12-27 | 一种化学机械抛光液 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109971358A true CN109971358A (zh) | 2019-07-05 |
Family
ID=67066682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711439627.7A Pending CN109971358A (zh) | 2017-12-27 | 2017-12-27 | 一种化学机械抛光液 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109971358A (fr) |
| WO (1) | WO2019129107A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115505932A (zh) * | 2022-09-07 | 2022-12-23 | 万华化学集团电子材料有限公司 | 一种钨化学机械抛光液及其应用 |
| CN116554788A (zh) * | 2023-05-06 | 2023-08-08 | 江苏山水半导体科技有限公司 | 一种降低硅片表面颗粒缺陷的精抛液及其制备与使用方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1714432A (zh) * | 2002-12-09 | 2005-12-28 | 第一毛织株式会社 | 用于硅晶片二次抛光的淤浆组合物 |
| CN101358109A (zh) * | 2007-08-03 | 2009-02-04 | 罗门哈斯电子材料Cmp控股股份有限公司 | 用来除去聚合物阻挡层的抛光浆液 |
| CN101451046A (zh) * | 2008-12-30 | 2009-06-10 | 清华大学 | 一种用于硅晶片抛光的抛光组合物 |
| CN101451047A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101457126A (zh) * | 2007-12-14 | 2009-06-17 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101550319A (zh) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101636465A (zh) * | 2007-01-31 | 2010-01-27 | 高级技术材料公司 | 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化 |
| CN102101976A (zh) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN103131330A (zh) * | 2008-02-01 | 2013-06-05 | 福吉米株式会社 | 研磨用组合物以及使用其的研磨方法 |
-
2017
- 2017-12-27 CN CN201711439627.7A patent/CN109971358A/zh active Pending
-
2018
- 2018-12-26 WO PCT/CN2018/124057 patent/WO2019129107A1/fr active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1714432A (zh) * | 2002-12-09 | 2005-12-28 | 第一毛织株式会社 | 用于硅晶片二次抛光的淤浆组合物 |
| CN101636465A (zh) * | 2007-01-31 | 2010-01-27 | 高级技术材料公司 | 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化 |
| CN101358109A (zh) * | 2007-08-03 | 2009-02-04 | 罗门哈斯电子材料Cmp控股股份有限公司 | 用来除去聚合物阻挡层的抛光浆液 |
| CN101451047A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101457126A (zh) * | 2007-12-14 | 2009-06-17 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN103131330A (zh) * | 2008-02-01 | 2013-06-05 | 福吉米株式会社 | 研磨用组合物以及使用其的研磨方法 |
| CN101550319A (zh) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101451046A (zh) * | 2008-12-30 | 2009-06-10 | 清华大学 | 一种用于硅晶片抛光的抛光组合物 |
| CN102101976A (zh) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115505932A (zh) * | 2022-09-07 | 2022-12-23 | 万华化学集团电子材料有限公司 | 一种钨化学机械抛光液及其应用 |
| CN115505932B (zh) * | 2022-09-07 | 2024-02-27 | 万华化学集团电子材料有限公司 | 一种钨化学机械抛光液及其应用 |
| CN116554788A (zh) * | 2023-05-06 | 2023-08-08 | 江苏山水半导体科技有限公司 | 一种降低硅片表面颗粒缺陷的精抛液及其制备与使用方法 |
| CN116554788B (zh) * | 2023-05-06 | 2024-01-23 | 江苏山水半导体科技有限公司 | 一种降低硅片表面颗粒缺陷的精抛液及其制备与使用方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019129107A1 (fr) | 2019-07-04 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination |