WO2019129107A1 - Solution de polissage mécano-chimique - Google Patents

Solution de polissage mécano-chimique Download PDF

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Publication number
WO2019129107A1
WO2019129107A1 PCT/CN2018/124057 CN2018124057W WO2019129107A1 WO 2019129107 A1 WO2019129107 A1 WO 2019129107A1 CN 2018124057 W CN2018124057 W CN 2018124057W WO 2019129107 A1 WO2019129107 A1 WO 2019129107A1
Authority
WO
WIPO (PCT)
Prior art keywords
chemical mechanical
polishing liquid
mechanical polishing
liquid according
polishing
Prior art date
Application number
PCT/CN2018/124057
Other languages
English (en)
Chinese (zh)
Inventor
潘依君
荆建芬
张建
姚颖
宋凯
蔡鑫元
杨俊雅
卞鹏程
李恒
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Publication of WO2019129107A1 publication Critical patent/WO2019129107A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the invention relates to the field of chemical mechanical polishing liquids, in particular to a chemical mechanical polishing liquid applied for polishing polycrystalline silicon.
  • the prior art CMP process uses a mixture of abrasives and chemicals and a polishing pad to polish a wafer surface.
  • the substrate is placed in direct contact with a rotating polishing pad and a load is applied to the backside of the substrate with a load.
  • the gasket and the table rotate while maintaining a downward force on the back side of the substrate, applying an abrasive and a chemically active solution (commonly referred to as a polishing fluid or polishing slurry) to the gasket, the polishing fluid being The chemical film reaction of the film being polished begins the polishing process.
  • polishing of polysilicon it is mainly used in two kinds of chips, one is DRAM and the other is Flash. In the latter application, polishing of silicon dioxide is often involved in the polishing of polysilicon.
  • US 2003/0153189 A1 discloses a chemical mechanical polishing liquid and method for polysilicon polishing, the polishing liquid comprising a polymer surfactant and an abrasive particle selected from the group consisting of alumina and cerium oxide, the polymer surfactant As a polycarboxylate surfactant, the slurry can be used to make the polishing rate of the bulk region of the polysilicon surface much higher than the polishing rate in the trench, thereby reducing the depression.
  • a method of manufacturing a Flash is disclosed in US 2003/0216003 A1 and US 2004/0163324 A1.
  • the invention comprises a polishing liquid for polishing polycrystalline silicon, the polishing liquid comprising at least one compound containing a -N(OH), -NH(OH), -NH 2 (OH) group, and the polycrystalline silicon and the slurry are used.
  • the polishing selectivity of silica is greater than 50.
  • US 2004/0014321 A1 discloses an acidic polishing liquid comprising abrasive particles and an oxidizing agent, which can be used to increase the polishing selectivity of polycrystalline silicon to silicon dioxide.
  • US 2004/0123528 A1 discloses an acidic polishing liquid comprising abrasive particles and an anionic compound which can reduce the removal rate of the protective layer film and increase the removal rate selection ratio of the polysilicon to the protective layer film.
  • US 2005/0130428 A1 and CN 1637102 A disclose a slurry for polysilicon chemical mechanical polishing comprising one or more nonionic surfactants forming a passivation layer on a polysilicon layer and one capable of forming The second passivation layer reduces the second surfactant of silicon nitride or silicon oxide removal rate.
  • the nonionic surfactant comprises at least one compound selected from the group consisting of ethylene oxide-propylene oxide block copolymer alcohol and ethylene oxide-propylene oxide triblock polymer, and the slurry can be The selection ratio between the polysilicon removal rate and the insulator removal rate is reduced by at least about 50%.
  • the present invention provides an alkaline chemical mechanical polishing liquid which has excellent stability and can be applied to polishing polycrystalline silicon, can significantly change the removal rate of polycrystalline silicon, and adjust the selection ratio of polycrystalline silicon to silicon dioxide, thereby significantly Improve the planarization efficiency of polysilicon.
  • the present invention provides an alkaline chemical mechanical polishing liquid comprising abrasive particles, a water-soluble high molecular polymer and a nonionic surfactant, and the nonionic surfactant is polyvinylpyrrolidone.
  • the abrasive particles are silica particles; the mass percentage concentration of the abrasive particles is preferably 2-15%, more preferably 5-10%; and the particle diameter of the abrasive particles is preferably 20-200 nm. More preferably, it is 50-120 nm.
  • the water-soluble polymer is hydroxyethyl cellulose or hydroxypropyl cellulose, and has a viscosity average molecular weight of 100,000 to 3,000,000, more preferably 300,000 to 150,000.
  • the mass percentage of the hydroxyethylcellulose or hydroxypropylcellulose is preferably from 0.005 to 0.5%, more preferably from 0.01 to 0.1%.
  • the nonionic surfactant is selected from the group consisting of polyvinylpyrrolidone.
  • the polyvinylpyrrolidone preferably has a molecular weight of from 2,000 to 400,000, more preferably from 5,000 to 60,000.
  • the polyvinylpyrrolidone has a mass percentage concentration of preferably 0.001 to 1%, more preferably 0.01 to 0.5%.
  • the chemical mechanical polishing liquid has a pH of 8.0-12.0, more preferably 9.0-11.0.
  • the chemical mechanical polishing liquid of the present invention may further contain other additives in the field such as a pH adjuster and a bactericide.
  • the chemical mechanical polishing liquid of the present invention can be prepared by concentration, diluted with deionized water and added with an oxidizing agent to the concentration range of the present invention.
  • the polishing liquid of the present invention has excellent stability and can significantly change the removal rate of polycrystalline silicon under alkaline conditions, adjust the selection ratio of polycrystalline silicon to silicon dioxide, and improve the planarization efficiency of polycrystalline silicon.
  • the polishing solution can be uniformly mixed according to the formula provided in the table, and adjusted to the desired pH value with KOH or HNO 3 . the amount.
  • the polishing liquid When the polishing solution has an average particle size increase of less than 20 nm at room temperature and in an oven at 40 ° C, the polishing liquid is determined to be excellent; when it is 20 nm or more and When it is less than 30 nm, the polishing liquid is determined to be good; when it is 30 nm or more and less than 40 nm, the polishing liquid is determined to be acceptable; when it is 40 nm or more and less than 50 nm, the polishing liquid is determined to be poor; When it is 50 nm or more, the polishing liquid is set to be poor.
  • Table 2 shows Examples 9-24 and Comparative Examples 1-3 of the chemical mechanical polishing liquid of the present invention, and the polishing liquid was uniformly mixed according to the formulation provided in the table, and adjusted with KOH or HNO 3 to the required state. pH, water is the balance.
  • Polycrystalline silicon and silicon dioxide were polished using the comparative polishing liquid 1-3 and the polishing liquid 9-24 of the present invention under the following conditions.
  • Polishing machine is Logitech LP50
  • polishing pad is politex
  • pressing pressure is 3.0 psi
  • polishing liquid flow rate is 200 ml/min
  • polishing time is 1 min.
  • Table 3 compares the removal rates of polysilicon and silicon dioxide from the polishing liquid 1-3 and the polishing liquid 9-24 of the present invention.
  • the polishing liquid 9-24 of the present invention significantly reduces the polysilicon removal rate compared to the polysilicon removal rate of 2432-4530 A/min in the comparative polishing liquid 1-3, and can be as low as 950 A/min.
  • the addition of polyvinylpyrrolidone to the polishing liquid has little effect on the removal rate of silica. Therefore, the polishing liquid 9-24 of the present invention can significantly reduce the selection ratio of polysilicon to silicon dioxide.
  • the selection ratio of the polishing liquids 9 and 10 to the polycrystalline silicon and the silicon dioxide was reduced by 56% and 60%, respectively; compared with the comparative polishing liquid 3, the polishing liquid 11 and 12 pairs of polycrystalline silicon and silicon dioxide The choice was reduced by 72% and 74% respectively.
  • polishing liquid provided by the invention can significantly change the removal rate of polycrystalline silicon under alkaline conditions, adjust the selectivity ratio of polycrystalline silicon to silicon dioxide, and improve the planarization efficiency of polycrystalline silicon after adding polyvinylpyrrolidone.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une solution de polissage mécano-chimique. La solution de polissage comprend des particules abrasives, un polymère soluble dans l'eau et un tensioactif non ionique ; le tensioactif non ionique est la polyvinylpyrrolidone. La solution de polissage de la présente invention présente une excellente stabilité, et peut modifier de manière significative un taux d'élimination de polysilicium dans des conditions alcalines, ce qui permet d'obtenir un ajustement à un rapport de sélection de polysilicium à l'oxyde de silicium et d'améliorer l'efficacité de planarisation de polysilicium.
PCT/CN2018/124057 2017-12-27 2018-12-26 Solution de polissage mécano-chimique WO2019129107A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711439627.7 2017-12-27
CN201711439627.7A CN109971358A (zh) 2017-12-27 2017-12-27 一种化学机械抛光液

Publications (1)

Publication Number Publication Date
WO2019129107A1 true WO2019129107A1 (fr) 2019-07-04

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CN (1) CN109971358A (fr)
WO (1) WO2019129107A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115505932B (zh) * 2022-09-07 2024-02-27 万华化学集团电子材料有限公司 一种钨化学机械抛光液及其应用
CN116554788B (zh) * 2023-05-06 2024-01-23 江苏山水半导体科技有限公司 一种降低硅片表面颗粒缺陷的精抛液及其制备与使用方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1714432A (zh) * 2002-12-09 2005-12-28 第一毛织株式会社 用于硅晶片二次抛光的淤浆组合物
CN101358109A (zh) * 2007-08-03 2009-02-04 罗门哈斯电子材料Cmp控股股份有限公司 用来除去聚合物阻挡层的抛光浆液
CN101451046A (zh) * 2008-12-30 2009-06-10 清华大学 一种用于硅晶片抛光的抛光组合物
CN101457126A (zh) * 2007-12-14 2009-06-17 安集微电子（上海）有限公司 一种化学机械抛光液
CN101636465A (zh) * 2007-01-31 2010-01-27 高级技术材料公司 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化
CN102101976A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液
CN103131330A (zh) * 2008-02-01 2013-06-05 福吉米株式会社 研磨用组合物以及使用其的研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451047B (zh) * 2007-11-30 2013-10-23 安集微电子（上海）有限公司 一种化学机械抛光液
CN101550319A (zh) * 2008-04-03 2009-10-07 安集微电子（上海）有限公司 一种化学机械抛光液

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1714432A (zh) * 2002-12-09 2005-12-28 第一毛织株式会社 用于硅晶片二次抛光的淤浆组合物
CN101636465A (zh) * 2007-01-31 2010-01-27 高级技术材料公司 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化
CN101358109A (zh) * 2007-08-03 2009-02-04 罗门哈斯电子材料Cmp控股股份有限公司 用来除去聚合物阻挡层的抛光浆液
CN101457126A (zh) * 2007-12-14 2009-06-17 安集微电子（上海）有限公司 一种化学机械抛光液
CN103131330A (zh) * 2008-02-01 2013-06-05 福吉米株式会社 研磨用组合物以及使用其的研磨方法
CN101451046A (zh) * 2008-12-30 2009-06-10 清华大学 一种用于硅晶片抛光的抛光组合物
CN102101976A (zh) * 2009-12-18 2011-06-22 安集微电子（上海）有限公司 一种化学机械抛光液

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