CN109963399A - 具有直接敷铜基板的电子组件 - Google Patents

具有直接敷铜基板的电子组件 Download PDF

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Publication number
CN109963399A
CN109963399A CN201811372415.6A CN201811372415A CN109963399A CN 109963399 A CN109963399 A CN 109963399A CN 201811372415 A CN201811372415 A CN 201811372415A CN 109963399 A CN109963399 A CN 109963399A
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Prior art keywords
terminal
metal
level
metal bus
semiconductor
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Inventor
克里斯多夫·J·施米特
理查德·E·温赖特
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Deere and Co
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Deere and Co
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Publication of CN109963399A publication Critical patent/CN109963399A/zh
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    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract

金属岛状区设置在第一金属总线与第二金属总线之间。第一金属条带通过第一介电屏障与金属岛状区隔离。第一金属条带的至少平行部分基本上平行于第一金属总线,第二金属条带通过第二介电屏障与第二金属总线隔离。每个第一半导体的端子耦合到第一金属总线和金属岛状区。每个第二半导体的端子耦合到金属岛状区和第二金属总线。

Description

具有直接敷铜基板的电子组件
技术领域
本公开涉及一种具有直接敷铜基板的电子组件。
背景技术
在一些现有技术中,直接敷铜(direct copper bonded,DCB)基板是指如下的电路板,其中铜层(例如,铜箔)和氧化铝层在足够高的温度下在工艺中直接结合或熔合。在某些实施例中,电子组件包括发热部件,例如半导体,电流测量装置或两者,其产生热负载,该热负载可导致基板和基板上的电路迹线的加热。由于发热部件,可能需要额外的散热来维持电子组件的目标工作温度范围。如果超过目标工作温度范围,某些电子部件或介电绝缘体可能会失效或无法按照规范执行。因此,需要一种具有直接敷铜基板的电子组件,该直接敷铜基板配置为用于改善热性能。
发明内容
根据一个实施例,一种电子组件包括:直接敷铜介电基板,直接敷铜介电基板包括介电层。第一金属总线覆盖介电层,第一金属总线具有总线宽度。第二金属总线覆盖介电层且基本上与第一金属总线平行。第一金属总线和第二金属总线与直流端子相关联。金属岛状区设置在第一金属总线与第二金属总线之间。第一金属条带的条带宽度小于总线宽度。第一金属条带通过第一介电屏障与金属岛状区隔离(例如,在如下的位置处,第一金属条带的至少平行部分基本上平行于第一金属总线)。第二金属条带的条带宽度小于总线宽度,第二金属条带通过第二介电屏障与第二金属总线隔离。每个第一半导体具有至少一个一级端子和二级端子,至少一个一级端子耦合到第一金属总线且二级端子耦合到金属岛状区。每个第二半导体具有至少一个一级端子和一个二级端子,至少一个一级端子耦合到金属岛状区且二级端子耦合到第二金属总线。
附图说明
图1是电子组件的一个实施例的第一透视图。
图2是图1中所示的电子组件的实施例的第二透视图。
图3是图1中所示的电子组件的实施例的第三透视图。
图4是根据图1的电子组件的电流测量系统的框图。
具体实施方式
根据一个实施例,图1示出了电子组件11,其包括介电层12和覆盖介电层12的第一金属总线14。第一金属总线14具有总线宽度16(例如,第一总线宽度)和总线高度或厚度。第二金属总线18覆盖在介电层12上并且通常与第一金属总线14平行,其中第一金属总线14和第二金属总线18与直流端子20相关联。例如,直流端子20与正直流输入和负直流输入相关联,以为直流总线供电。
在一个实施例中,金属岛状区22设置在第一金属总线14和第二金属总线18之间。金属岛状区22通过介电层12的中置介电区域与第一金属总线14和第二金属总线电隔离。在一个示例中,金属岛状区22表示输出总线或者电连接到输出总线或与输出总线共用。金属岛状区22或输出总线与相应的输出端子、输出端子焊盘或输出导电焊盘66相关联。
在一种配置中,可选的电流测量装置或分流电阻器62覆盖金属岛状区22或输出导电焊盘66的与输出(例如体现电子组件11的逆变器或转换器的一相)相关联的一部分。特别地,分流电阻器62可以经由焊料层13焊接、钎焊或以其他方式电连接和机械连接到金属岛状区22或输出端子焊盘。在一种配置中,输出导电焊盘66或金属岛状区22上方的空间(该空间否则可能是空的)可以填充有可选的电流测量装置(例如,分流电阻器62),以与其他可能的方法相比实现电子组件11的更大的电路密度或减小的封装尺寸。在另一种配置中,可选的电流测量装置或分流电阻器62同时用作输出端子和分流电阻器62。分流电阻器62具有中心孔86,该中心孔86可以是基本上圆柱形的,用螺纹攻丝的或带有螺纹的以接收紧固件,该紧固件与导电电缆或输出导体(例如,端接于连接器中的导体,该连接器具有用于接收紧固件的开口或孔眼)相关联。
分流电阻器62可以作为电流分流器(例如,分流电阻器62的一个端子耦合到大地)和输出端子操作,其中电流分流器具有接合线,该接合线将该电流分流器连接到用于“开尔文连接”的直接敷铜介电基板10上的导电焊盘77。“开尔文连接”支持跨分流电阻器62的端子的精确电压测量,因为在电压测量中减少了或消除了与周围总线结构的电阻或阻抗相关的寄生或辅助电压降。
第一金属条带24(例如,升高的第一金属条带)具有小于总线宽度16(例如,第一总线宽度)的条带宽度26。第一金属条带24通过第一介电屏障28(例如,介电桥)与金属岛状区22电隔离。在一个实施例中,第一金属条带24包括升高的第一金属条带24,其通过介电屏障(例如,电介质桥)升高到基板、金属岛状区22或两者之上。例如,第一介电屏障28可以被配置为具有支柱、支脚或其他竖直支撑件29的介电桥,所述支柱、支脚或其他竖直支撑件29靠置在金属岛状区22上、固定到或粘附地结合到金属岛状区22。
第二金属条带30具有小于总线宽度16的条带宽度26(例如,第二条带宽度)。第二金属条带30通过第二介电屏障32(例如,介电桥)与第二金属总线18电隔离。第二金属条带30与第一金属条带24间隔开并且与第一金属条带24电隔离。在一个实施例中,第二金属条带30包括升高的第二金属条带30,其通过介电屏障(例如,电介质桥)升高到基板、金属岛状区22或两者之上。例如,第二介电屏障32可以被配置为具有支柱、支脚或其他竖直支撑件29的介电桥,所述支柱、支脚或其他竖直支撑件29靠置在第二金属总线18上、固定到或粘附地结合到第二金属总线18。
一组(例如,行)一个或多个第一半导体34与电子组件11相关联。每个第一半导体34具有至少一个一级端子36,二级端子38(例如,半导体34的底部上的导电焊盘)和三级端子44。对于一个或多个第一半导体34,至少一个一级端子36连接到第一金属总线14;二级端子38(例如,半导体34的底部上的导电焊盘)连接到金属岛状区22;三级端子44连接到第一金属条带24。在一个实施例中,一级端子36和二级端子38统称为每个对应的第一半导体的开关端子,而三级端子44包括每个对应的第一半导体34的控制端子。如图所示,二级端子38包括导电焊盘,该导电焊盘与第一半导体34的封装是一体的。在一个实施例中,如果第一半导体34包括晶体管,开关端子包括发射极和集电极,或源极和漏极。如图所示,至少一个一级端子36可以包括多个引线(例如,接合线),这些引线并联配置,以相对于较少数量的引线增加第一半导体器件的载流能力。
一组(例如,行)一个或多个第二半导体40与电子组件11相关联。每个第二半导体40具有至少一个一级端子36,二级端子38(例如,第二半导体40的底侧上的导电焊盘)和三级端子44。至少一个一级端子36连接到金属岛状区22;二级端子38连接到第二金属总线18;以及三级端子44连接到第二金属条带30。在一个实施例中,一级端子36和二级端子38统称为每个对应的第二半导体40的开关端子,而三级端子44包括每个对应的第二半导体40的控制端子。如图所示,二级端子38包括导电焊盘,该导电焊盘与第二半导体40的封装是一体的。如图所示,至少一个一级端子36可以包括多个引线(例如,接合线),这些引线并联配置,以相对于较少数量的引线增加第二半导体器件40的载流能力。
根据图1,电子组件11的一个实施例包括直接敷铜介电基板10(例如,陶瓷基板)的介电层12和覆盖介电层12的第一侧的第一金属总线14。第一金属总线14具有总线宽度16。第二金属总线18覆盖在介电基板上并且基本上与第一金属总线14平行,其中第一金属总线14和第二金属总线18与直流端子20相关联。第二金属总线18的总线宽度可以等于或不同于第一金属总线14的总线宽度16。第一金属条带24的条带宽度26小于总线宽度,第一金属条带24的至少平行部分大致平行于第二金属条带30(例如,或第一金属总线14)。第二金属条带30的条带宽度26小于总线宽度,其中第二金属条带30的至少平行部分大致平行于第一金属条带24(例如,或第一金属总线14)。第一金属条带24的条带宽度26可以与第二金属条带30的条带宽度相同或不同。
在一个实施例中,开关组件包括一组一个或多个第一半导体34和另一组一个或多个第二半导体40,第一半导体34和第二半导体40通过它们各自的在基板10上的导电迹线14、18、22而结合。如图所示,第一半导体34和第二半导体40布置在相应的行中。在一个实施例中,每个第一半导体34具有至少一个一级端子36,二级端子38和三级端子44,这些端子耦合到直接敷铜介电基板10的相应电路迹线。一组一个或多个第二半导体40中的每个第二半导体40具有至少一个一级端子36,二级端子38和三级端子44,这些端子耦合到直接敷铜介电基板的相应电路迹线14、18、22。
在一个实施例中,直接敷铜介电基板10的第二侧43与第一侧41相反;第二侧43与铜层或铜合金层相关联,该铜层或铜合金层直接结合到介电层12上的基层17。因此,直接敷铜介电基板10具有双面配置,其中在第一侧41和第二侧43上具有导电迹线。如图3所示,散热器83经由焊料层15焊接或钎焊到直接敷铜介电基板10的第二侧43,其中第二侧43具有金属层85,例如金属接地平面或导电焊盘,该属接地平面或导电焊盘的尺寸和形状与散热器83的相应尺寸和形状相对应并且相互配合。在一个替代实施例中,散热器83可以焊接、熔合、直接结合、热和机械结合、或冶金结合到第二侧43。
在一个实施例中,散热器83包括大致平面的散热器83(例如,金属,金属合金或铝散热器)。散热器83的上侧51面对或接触介电基板10,而散热器83的下侧53可包括电子组件11的外部部分,该外部部分用于经由空气冷却,液体冷却或两者将热能散发到周围环境。例如,在替代实施例中,散热器83的下侧53可具有从大致平坦的表面84向外延伸的翅片,凸起或突起,以通过空气冷却来增强散热。
在一个实施例中,介电基板10包括直接敷铜(DCB)基板。DCB介电基板10是指如下的电路板,其中铜层(例如,铜箔)和基层17在足够高的温度下在工艺中直接结合或熔合。基层17由氧化铝(即三氧化二铝)、氮化铝、碳化铝或其他氧化物、碳化物或氮化物化合物组成。铜层和基层17可以被蚀刻、去除、形成或以其他方式构造成导电迹线,例如第一金属总线14,第二金属总线18,金属岛状区22。此外,粘附用金属箔,光刻、化学处理、电镀,非电解镀或三维印刷可用于形成其他导电迹线,例如第一金属条带24和第二金属条带30。在某些实施例中,电子组件11包括发热部件,例如半导体、电流测量装置或两者。
在DCB介电基板10上,有时可以使导体或导电迹线更厚(更高),更宽或两者以支持相应的阈值载流容量。在一个实施例中,可以通过使用较厚的铜箔、金属溅射、非电解镀、电镀、沉积或其他工艺来增加任何金属迹线的厚度或高度。如果符合导电迹线中的电感的适用设计限制以及DCB介电基板10上的可用空间的要求,则DCB介电基板10可以被配置为具有比传统电路板(例如具有铜迹线的陶瓷或玻璃纤维板)更高的导热率和更高的载流容量。这里,基板上的导电迹线、总线、条带或导体的配置支持适合于电力电子应用的热性能和散热。
在一个实施例中,第一金属总线14、第二金属总线18和第一金属岛状区22由铜或铜合金构成,该铜或铜合金通过基层17直接结合到介电层12。第一金属总线14、第二金属总线18、第一金属条带24和第二金属条带30由铜或铜合金构成。
每个第一半导体34包括耦合到第一金属条带24的三级端子44。每个第二半导体40包括耦合到第二金属条带30的另一三级端子44。至于第一半导体34和第二半导体40,三级端子44包括直接结合到相应的第一金属条带24和第二金属条带30的接合线。至少一个一级端子36包括一组并联的多个接合线46以支持更大的电流处理能力。
第一半导体的二级端子38包括在第一半导体的下表面50上的导电焊盘。第二半导体的二级端子38包括在第二半导体40的下表面50上的导电焊盘。
一级端子36和二级端子38包括每个第一半导体34的开关端子,并且其中三级端子44包括每个第一半导体34的控制端子。一级端子36和二级端子38包括每个第二半导体的开关端子,并且其中三级端子44包括每个第二半导体40的控制端子。
第一金属条带24具有垂直部分54,其基本垂直于平行部分(例如,24)。第一金属总线14和第二金属总线18与具有相应的孔56的直流端子20相关联。第一金属总线14、第二金属总线18、第一金属条带24和第二金属条带30具有连接片58,其垂直于或基本垂直于第一金属总线14、第二金属总线18、第一金属条带24和第二金属条带30中的相应的一个。在一种配置中,每个连接片58端接于相应的基本上椭圆形的部分60,该部分具有相应的椭圆形开口。
在一个实施例中,电流测量系统与电子组件11相关联或安装在电子组件11中。例如,电流测量系统可以与开关组件相关联以形成电子组件11。在一个实施例中,电流测量系统单独地包括分流电阻器62,或组合地包括该分流电阻器62和电流测量装置,这结合图4将更加详细说明。
在一个实施例中,分流电阻器62是安装在介电基板10上基本上圆柱形器件并且与第一半导体34和第二半导体40间隔开。例如,分流电阻器62还包括覆盖介电层12上的金属岛状区22或输出导电焊盘66的第一环形构件64。第一环形构件64由导电材料构成,例如金属或金属合金。第一环形构件64具有基部68,位于基部68上方的中间部分69,以及位于中间部分69或颈部上方的外部70。中间部分69或颈部可以具有中间外径57,其小于第一环形构件64的第一外径59或第二环形构件72的第二外径53。因此,具有中间外径57的中间部分69的较薄壁提供到输出信号的更高的电阻或阻抗(例如,对于逆变器的输出相的交流输出);因此,与整个圆柱形分流电阻器62相比,电压降更大。
在一个实施例中,第二环形构件72被包覆模制,模制在第一环形构件64的中间部分69或颈部周围或与该中间部分69或颈部同轴地接合。第二环形构件72由介电材料构成,其中分流电阻器62的端子与基部68和外部70电连接和机械连接。
在一个替代实施例中,第二环形构件72由柔性弹性体构成,该柔性弹性体不需要包覆模制或模制在第一环形构件64上,但是可以弹性地且不可畸变地膨胀以配合在第一环形构件64周围。
在一个实施例中,温度传感器74嵌入第二环形构件72中。在一个说明性示例中,温度传感器74的端子和分流电阻器62的端子经由接合线75或导体连接到对应的焊盘77。在电气组件10的操作期间,分流电阻器62加热并且导体或材料的电导率可以改变。温度传感器74可以测量分流电阻器62的真实观察温度,以校正电流偏移,因为依赖于温度的电导率发生变化。温度传感器74可以放置或嵌入第二环形构件72中且尽可能靠近电流传感器的关键位置,以进行适当的温度测量。
在一种配置中,第二环形构件72由介电材料构成,例如塑料,聚合物或纤维填充的塑料或聚合物,这些介电材料位于温度传感器74和输出端子(例如,相位输出端子)之间以用于电隔离,其中可以基于输出端子中的最大电流和最大电压电平来选择温度传感器74和输出端子之间的介电材料的厚度。在一个实施例中,可以选择具有高弹性模量的塑料、聚合物或纤维填充的塑料或聚合物,使得第二环形构件72不会响应于与分流电阻器62和输出端子相关联的预期的热和机械应力而变形,该分流电阻器62和输出端子经由中心孔86而附接有电缆或导体。此外,具有高弹性模量的塑料为中间部分69提供抵抗拉应力或剪切应力或两者的结构支撑。
在一个实施例中,分流电阻器62覆盖在金属岛状区22或输出导电焊盘66的与电子组件11的输出信号相关联的一部分上。如果电子组件11包括逆变器或转换器,则逆变器或转换器的输出信号可以是交流输出信号、脉冲宽度调制输出信号或正弦信号。分流电阻器62具有中心孔86和输出端子89以提供输出信号。分流电阻器62非常适合作为输出端子89和分流电阻器62同时起作用,以节省直接敷铜介电基板10的表面上的空间区域,并使用于车辆应用(例如公路高速公路或越野车辆应用)的电子组件11的尺寸最小化。在一种配置中,分流电阻器62的下部80被焊接、钎焊或以其他方式电连接和机械连接到金属岛状区22或输出端子焊盘;分流电阻器62的上部82具有平坦表面84和用于接收电缆或导体的孔86,该电缆或导体端接于电连接器中,从而经由紧固件进行电气和机械连接。在一个实施例中,温度传感器74的端子和分流电阻器62的端子通过接合线75或其他导体连接到相应的焊盘77。
在另一示例中,如图4所示,电压测量电路78耦合到分流电阻器62的端子,以测量跨分流电阻器62的电压降,该电压降与在分流电阻器62中流动的电流成比例。如果电子组件11包括逆变器,则电流可以代表逆变器的一相的输出电流。在一个示例中,电压测量电路78检测分流电阻器62的端子之间的电压降,以根据欧姆定律估计在分流电阻器62中流动的相应电流。电压测量电路78可以耦合到输入模数转换器79,该输入模数转换器79将测量的电压降转换为数字值。模数转换器79的输出耦合到电子数据处理器91,电子数据处理器91通过数据总线94与数据存储设备92通信。电子数据处理器19可包括微控制器、微控制器、可编程逻辑阵列、数字信号处理器、专用集成电路、算术逻辑单元或其他数据处理器。在一个实施例中,数据存储设备92包含查找表93、另一数据结构或软件指令(例如,数学方程),其可用于基于测量电压的对应数字值来估计电流。
在一个实施例中,电子组件11可以通过首先将铜或铜层直接结合到氧化铝、氮化铝、碳化硅铝或三氧化二铝的基层17来构造。其次,可以蚀刻铜层(例如,化学地或用光刻法)以产生电路迹线,例如第一金属总线14、第二金属总线18、金属岛状区22、输出导电焊盘66和其他导电焊盘77、以及其他焊盘或导体。第三,将第一半导体34和第二半导体40焊接到它们各自的电路迹线或焊盘。第四,第一半导体34和第二半导体的某些端子通过接合线连接到DCB介电基板上的相应电路迹线。第五,介电屏障28、32放置在电路板组件或介电基板10上的导电迹线14、18、22上方,以支撑第一导电条带24和第二导电条带30,第一导电条带24和第二导电条带30可分别承载到(例如,通过三级端子44)第一半导体34和第二半导体40的控制信号。第一介电屏障28和第一导电条带24的组合可以称为第一信号承载桥。类似地,第二介电屏障32和第二导电条带30的组合可以称为第二信号承载桥。
在一种配置中,组件可以放置在外壳中并填充有介电填充物或灌封物,例如硅树脂灌封物以屏蔽污染物,从而保持介电绝缘以及(结构上)支撑部件,例如第一半导体34、第二半导体40和分流电阻器62。
在一个实施例中,电子组件11可以包括逆变器或转换器,例如用于将直流输入转换为交流输出的逆变器。电子组件11非常适合于将半导体器件、总线、连接器、电流测量装置和任何其他发热部件保持在目标工作温度范围内,以便在热规范内实现适当的全功能操作。通过将分流电阻器62和输出端子组合成单个两用装置,与其他可能的方法相比,电流测量系统或分流电阻器62在电路板或直接敷铜介电基板10上使用更小的空间。此外,通过将分流电阻器62和输出端子组合成单个两用装置,电子组件11中的焊点总数量减少,通过使用两用装置而避免焊点来实现该数量减少。焊点数量的减少可以与电子组件11的更高可靠性和寿命相关联,因为消除任何焊点消除了间歇或不可靠电连接的可能性。
分流电阻器的电阻足够低,因为电流电阻器分流器的热负载或发热能力最小。相反,电流电阻器的金属体的质量分流(该质量分流在电路板或直接敷铜基板10上方延伸)便于冷却金属岛状区22或输出焊盘66或从金属岛状区22或输出焊盘66散热或耗热,该金属岛状区22或输出焊盘66倾向于从半导体器件(例如,34、40)接收热量(例如,通过热传导)。
已经描述了一个或多个优选实施例,显而易见的是,在不脱离所附权利要求限定的本发明的范围的情况下,可以进行各种修改。

Claims (22)

1.一种电子组件,包括:
直接敷铜介电基板,所述直接敷铜介电基板包括介电层;
第一金属总线,所述第一金属总线覆盖所述介电层,所述第一金属总线具有总线宽度;
第二金属总线,所述第二金属总线覆盖所述介电层且基本上与所述第一金属总线平行,其中,所述第一金属总线和所述第二金属总线与直流端子相关联;
金属岛状区,所述金属岛状区在所述第一金属总线与所述第二金属总线之间;
第一金属条带,所述第一金属条带的条带宽度小于所述总线宽度,所述第一金属条带通过第一介电屏障与所述金属岛状区隔离;
第二金属条带,所述第二金属条带的条带宽度小于所述总线宽度,所述第二金属条带通过第二介电屏障与所述第二金属总线隔离;
一组一个或多个第一半导体,每个所述第一半导体具有至少一个一级端子和二级端子,所述至少一个一级端子耦合到所述第一金属总线且所述二级端子耦合到所述金属岛状区;和
一组一个或多个第二半导体,每个所述第二半导体具有至少一个一级端子和二级端子,所述至少一个一级端子耦合到所述金属岛状区且所述二级端子耦合到所述第二金属总线。
2.根据权利要求1所述的电子组件,其中,所述第一金属总线、所述第二金属总线和所述金属岛状区由铜或铜合金构成,且经由基层直接结合到所述介电层。
3.根据权利要求1所述的电子组件,其中,所述第一金属总线、所述第二金属总线、所述第一金属条带和所述第二金属条带由铜或铜合金构成。
4.根据权利要求1所述的电子组件,其中,每个所述第一半导体中还包括耦合到所述第一金属条带的三级端子;
其中,每个所述第二半导体还包括耦合到所述第二金属条带的另一三级端子。
5.根据权利要求4所述的电子组件,其中,所述三级端子包括直接结合到相应的第一金属条带和第二金属条带的接合线。
6.根据权利要求4所述的电子组件,其中,所述至少一个一级端子包括一组并联的多个接合线,以支持更大的电流处理能力。
7.根据权利要求1所述的电子组件,其中,所述第一半导体的二级端子包括在所述第一半导体的下表面上的导电焊盘,其中所述第二半导体的二级端子包括在所述第二半导体的下表面上的导电焊盘。
8.根据权利要求1所述的电子组件,其中,所述一级端子和所述二级端子包括每个所述第一半导体的开关端子,并且其中所述三级端子包括每个所述第一半导体的控制端子。
9.根据权利要求1所述的电子组件,其中,所述一级端子和所述二级端子包括每个所述第二半导体的开关端子,并且其中所述三级端子包括每个所述第二半导体的控制端子。
10.根据权利要求1所述的电子组件,其中,所述第一金属条带的平行部分大致平行于所述第一金属总线,并且其中第一金属条带具有基本垂直于所述平行部分的垂直部分。
11.根据权利要求1所述的电子组件,其中,所述第一金属总线和所述第二金属总线与具有相应孔的直流端子相关联。
12.根据权利要求1所述的电子组件,其中,所述第一金属总线、所述第二金属总线、所述第一金属条带和所述第二金属条带中的每一个具有连接片,所述连接片垂直于或基本垂直于所述第一金属总线、所述第二金属总线、所述第一金属条带和所述第二金属条带中的相应的一个延伸。
13.根据权利要求12所述的电子组件,其中,所述连接片端接于具有相应椭圆形开口的大致椭圆形部分。
14.根据权利要求1所述的电子组件,还包括:
分流电阻器,所述分流电阻器安装在所述介电基板上并与所述第一半导体和所述第二半导体间隔开。
15.根据权利要求14所述的电子组件,其中,所述分流电阻器还包括:
第一环形构件,所述第一环形构件覆盖所述介电层上的所述金属岛状区或所述导电焊盘,所述第一环形构件由导电材料构成,所述第一环形构件具有基部、在所述基部上方的中间部分以及在所述中间部分上方的外部;和
第二环形构件,所述第二环形构件同轴地接合所述第一环形构件的所述中间部分,所述第二环形构件由介电材料构成,其中所述分流电阻器的端子电连接和机械连接所述基部和所述外部。
16.根据权利要求15所述的电子组件,还包括:
温度传感器,所述温度传感器嵌入所述第二环形构件中。
17.根据权利要求16所述的电子组件,还包括:
所述温度传感器的多个端子和所述分流电阻器的端子,所述温度传感器的多个端子和所述分流电阻器的端子经由接合线连接到焊盘。
18.根据权利要求15所述的电子组件,还包括:
电流测量电路,所述电流测量电路耦合到所述分流电阻器的端子,以测量跨所述分流电阻器的电压降,该电压降与在所述分流电阻器中流动的电流成比例。
19.一种电子组件,包括:
直接敷铜介电基板,所述直接敷铜介电基板包括介电层;
第一金属总线,所述第一金属总线覆盖所述介电层,所述第一金属总线具有总线宽度;
第二金属总线,所述第二金属总线覆盖所述介电层且基本上与所述第一金属总线平行,其中,所述第一金属总线和所述第二金属总线与直流端子相关联;
金属岛状区,所述金属岛状区在所述第一金属总线与所述第二金属总线之间,所述金属岛状区包括输出端子焊盘;
第一金属条带,所述第一金属条带的条带宽度小于所述总线宽度,所述第一金属条带通过第一介电屏障与所述金属岛状区隔离;
第二金属条带,所述第二金属条带的条带宽度小于所述总线宽度,所述第二金属条带通过第二介电屏障与所述第二金属总线隔离;
一组一个或多个第一半导体,每个第一半导体具有至少一个一级端子和二级端子,所述至少一个一级端子耦合到所述第一金属总线且所述二级端子耦合到所述金属岛状区;
一组一个或多个第二半导体,每个第二半导体具有至少一个一级端子和二级端子,所述至少一个一级端子耦合到所述金属岛状区且所述二级端子耦合到所述第二金属总线;和
分流电阻器,所述分流电阻器覆盖所述金属岛状区或所述输出端子焊盘的与所述电子组件的输出信号相关联的一部分,所述分流电阻器具有中心孔并提供用于所述输出信号的输出端子。
20.根据权利要求19所述的电子组件,还包括:
所述分流电阻器的下部,所述分流电阻器的下部焊接、钎焊或以其他方式电连接和机械连接到所述金属岛状区或所述输出端子焊盘;
所述分流电阻器的上部,所述分流电阻器的上部具有平坦表面和用于接收电缆或导体的孔,该电缆或导体端接于电连接器中,从而通过紧固件进行电气和机械连接。
21.根据权利要求20所述的电子组件,其中,所述分流电阻器同时用作输出端子和分流电阻器,以节省所述直接敷铜介电基板的表面上的空间区域。
22.根据权利要求19所述的电子组件,其中所述第一金属条带的至少平行部分大致平行于所述第一金属总线。
CN201811372415.6A 2017-12-22 2018-11-16 具有直接敷铜基板的电子组件 Pending CN109963399A (zh)

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