CN109962133A - A kind of QLED device and preparation method thereof - Google Patents
A kind of QLED device and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The invention discloses a kind of QLED devices and preparation method thereof, and preparation method includes the following steps: quantum dot light emitting layer is prepared on cathode；The first boundary layer is prepared on quantum dot light emitting layer by the method for atomization, first boundary layer is metal oxide layer or organic polymer layers；Anode is prepared on the first boundary layer, obtains QLED device.The present invention prepares one layer of first boundary layer by the solution methods of atomization between quantum dot light emitting layer and anode, the influence caused by luminescent layer when preventing to prepare hole transmission layer or hole injection layer by solwution method, it is passivated the defect state of quantum dot light emitting layer surface simultaneously, improves the efficiency of device.
Description
Technical field
The present invention relates to QLED devices fields more particularly to a kind of QLED device and preparation method thereof.
Background technique
Light emitting diode with quantum dots (QLED) has that peak width at half height is narrow, Color tunable and can the excellent spy such as solution method preparation
Point has become the contenders of next-generation display science and technology.Researcher studies QLED from different angles, including
Research to QD, HTL, ETL and electrode；There are also to the properity of device and the research of stability.What researcher was studied
QLED device is all the eurymeric QLED device architecture of bottom emitting mostly, and transoid QLED device architecture is really to be suitble to screen application
The QLED structure needed.Because transoid QLED structure is excellent with that can be directly connected to the TFT transistor backboard of n- channel-type
Gesture.
In research in recent years, researcher, which also obtains, has high brightness, high efficiency and low turn-on voltage device performance
Transoid QLED device.Currently, transoid device architecture is mainly the structure of ITO/ETL/QD/HTL/HIL/Al, wherein HTL is common
Deposition materials are the materials such as TFB, PVK, TCTA, poly-TPD, CBP and mCP.However HTL deposition materials can be dissolved mostly all
It is chlorobenzene, toluene or dichloro-benzenes equal solvent, these solvents can similarly dissolve QD layers.So in the method using whole soln
It is unavoidable when depositing HTL QD layers to be impacted when preparing transoid QLED structure, it might even be possible to by QD layers of all punching
It brushes off, thereby reduces the efficiency of device.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of transoid QLED device and its preparation sides
Method, it is intended to unavoidable when depositing HTL or HIL QD layers to be caused when solving prior art preparation transoid QLED device
The problem of influence.
Technical scheme is as follows:
A kind of preparation method of QLED device, wherein the following steps are included:
Quantum dot light emitting layer is prepared on cathode；
The first boundary layer is prepared on quantum dot light emitting layer by the method for atomization, first boundary layer is metal oxide layer
Or organic polymer layers；
Anode is prepared on the first boundary layer, obtains QLED device.
The preparation method of the QLED device, wherein before the step of preparing anode on the first boundary layer, also wrap
It includes: preparing hole functional layer on the first boundary layer, the hole functional layer is between the first boundary layer and anode.
The preparation method of the QLED device, wherein first is prepared on quantum dot light emitting layer by the method for atomization
The step of boundary layer includes:
The first interlayer materials solution is prepared, the first interlayer materials solution is molten for the salting liquid or organic polymer of metal
Liquid；
Atomization process is carried out to the first interlayer materials solution；
The first interlayer materials solution through atomization process is sprayed on quantum dot light emitting layer；
The the first interlayer materials solution through atomization process ejected is heated, the solvent in the first interlayer materials solution is waved
Hair, and the first boundary layer is prepared on quantum dot light emitting layer.
The preparation method of the QLED device, wherein the first interlayer materials solution is selected from AlCl3Solution, PVP
One of solution, PMMA solution, PVC solution and PEI solution；
And/or in the first interlayer materials solution, the concentration of the first interlayer materials is 5-60mg/mL；
And/or in the step of heating the first interlayer materials solution through atomization process ejected, the temperature of the heating is
80-300℃；
And/or in the step of heating the first interlayer materials solution through atomization process ejected, the mode of the heating is
Infrared heating or microwave heating.
The preparation method of the QLED device, wherein first boundary layer with a thickness of 2-20nm.
The preparation method of the QLED device, wherein before the step of preparing quantum dot light emitting layer on cathode, also wrap
It includes: preparing electronic work ergosphere on cathode, the electronic work ergosphere is between cathode and quantum dot light emitting layer.
The preparation method of the QLED device, wherein the step of preparing quantum dot light emitting layer on electronic work ergosphere it
Before, further includes: second interface layer is prepared on electronic work ergosphere by the method for atomization, the second interface layer is located at electronic work
Between ergosphere and quantum dot light emitting layer, the second interface layer is metal oxide layer or organic polymer layers.
The preparation method of the QLED device, wherein the second boundary is prepared on electronic work ergosphere by the method for atomization
The step of surface layer includes:
Second interface layer material solution is prepared, the second interface layer material solution is molten for the salting liquid or organic polymer of metal
Liquid；
Atomization process is carried out to second interface layer material solution；
The second interface layer material solution through atomization process is sprayed on electronic work ergosphere；
The second interface layer material solution through atomization process ejected is heated, the solvent in second interface layer material solution is waved
Hair, and second interface layer is prepared on electronic work ergosphere.
The preparation method of the QLED device, wherein the second interface layer material solution is selected from AlCl3Solution, PVP
One of solution, PMMA solution, PVC solution and PEI solution；
And/or in the second interface layer material solution, the concentration of second contact surface layer material is 5-60mg/mL；
And/or in the step of heating the second interface layer material solution through atomization process ejected, the temperature of the heating is
80-300℃；
And/or in the step of heating the second interface layer material solution through atomization process ejected, the mode of the heating is
Infrared heating or microwave heating.
A kind of QLED device, wherein be prepared using the preparation method of QLED device of the present invention.
The utility model has the advantages that the present invention prepares one layer of first boundary layer (the by the solution methods of atomization in anode and QD layers
One IL layers), on influence caused by QD layers when preventing solwution method from preparing HTL or HIL, the described first IL layers can also be passivated quantum dot
The defect state for the layer surface that shines, to improve the efficiency of device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of atomising device of the present invention.
Fig. 2 is transoid QLED device architecture schematic diagram prepared by the embodiment of the present invention 1.
Fig. 3 is transoid QLED device architecture schematic diagram prepared by the embodiment of the present invention 2.
Fig. 4 is transoid QLED device architecture schematic diagram prepared by the embodiment of the present invention 3.
Fig. 5 is transoid QLED device architecture schematic diagram prepared by the embodiment of the present invention 4.
Specific embodiment
The present invention provides a kind of QLED device and preparation method thereof, to make the purpose of the present invention, technical solution and effect more
Add clear, clear, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
The present invention provides a kind of preparation method of transoid QLED device, wherein the following steps are included:
Quantum dot light emitting layer is prepared on cathode；
It is prepared on quantum dot light emitting layer the first boundary layer (the first IL layers) by the method for atomization, first boundary layer is gold
Belong to oxide skin(coating) or organic polymer layers；
Anode is prepared on the first boundary layer, obtains QLED device.
The present invention is directed to the prior art when using HTL or HIL of whole soln method preparation transoid QLED device, to QDs layers
The problem of impacting, by IL layers of the preparation the first on quantum dot light emitting layer, it is possible to prevente effectively from solwution method is used to prepare HTL
Or when HIL, on being influenced caused by QDs layers.In addition, general solwution method by the salting liquid of the first interlayer materials such as metal or
Organic polymer soln prepares the first boundary layer such as metal oxide layer or organic polymer layers, requires to carry out high annealing,
The high annealing will lead to QD layers and be quenched；And the salting liquid or organic polymer soln of Direct precipitation metal, due to solute point
It dissipates unevenly, it is uneven to will lead to film forming；And general the first IL layers of solwution method preparation, solvent can rush part QD layer material
It brushes off.Therefore, the present invention is in order to solve the above problem existing for general solwution method, by the method for atomization in quantum dot light emitting
The described first IL layer are prepared on layer, in this way it is possible to prevente effectively from what the first IL layers of the preparation of existing solwution method when impacted QD layers
Problem；Described first IL layers can also be passivated the defect state of QD layer surface, and then reduce constraint of the defect state to charge, raising amount
The fluorescence efficiency of son point, to improve the efficiency of device.
The method by atomization specifically includes the step of preparing the first boundary layer on quantum dot light emitting layer:
Prepare the first interlayer materials solution；
Atomization process is carried out to the first interlayer materials solution；
The first interlayer materials solution through atomization process is sprayed on quantum dot light emitting layer；
The the first interlayer materials solution through atomization process ejected is heated, the solvent in the first interlayer materials solution is waved
Hair, and the first boundary layer is prepared on quantum dot light emitting layer.
Fig. 1 is specifically combined, prepared by the first boundary layer to the method for atomization and is described in detail: preparing the first boundary layer first
Then material solution carries out atomization process through atomizer to the first interlayer materials solution, by spray head to substrate (such as quantum dot
Luminescent layer) on spray the first interlayer materials solution through atomization process, and the lower section of spray head install a heating device,
The the first interlayer materials solution through atomization process ejected is heated by the heating device, finally allows mesh
Mark product is deposited directly on substrate (such as quantum dot light emitting layer), in this way can be to avoid damage of the solvent to the film being previously deposited
Wound, can also influence to avoid high-temperature process to film.The effect of atomization process therein is to make the first interlayer materials solution
A tiny liquid is formed, the heating of next step is conducive to.Liquid volume after atomization is small, is easy in the process of heating
It is rapidly heated, and then the solvent in liquid can be rapidly removed；Another effect is can be to the first interlayer materials solution
It is quickly heated, and then the reaction for the first interlayer materials solution provides required temperature.The present invention is in injection the
When one interlayer materials solution, it can be rotated, to obtain the first boundary layer more evenly.
First boundary layer can be with metal oxide layer, such as Al2O3, the corresponding first interlayer materials solution is
The salting liquid of metal, such as AlCl3Solution；First boundary layer may be other special organic polymer layers, as PVP,
PMMA, PVC, PEI and it is other can be distributed to solvent (solvent will with the solvent of HTL or HIL formed orthogonal solvents, i.e.,
Polar solvent, such as alcohol or water) in non-conductive polymer etc., the organic polymer layers have similar hole transmission layer
Effect, the corresponding first interlayer materials solution is organic polymer soln, as PVP solution, PMMA solution, PVC are molten
Liquid, PEI solution and other non-conductive polymer solutions etc..
In the step of the first interlayer materials solution of the preparation, the concentration of the first interlayer materials is 5-60mg/mL.It is dense
Spend the low atomization for needing the long period, it is not easy to form one layer of complete first boundary layer, when excessive concentration, be easy blocking mist
Change spray head, is unfavorable for preparing the first boundary layer.
In the step of first interlayer materials solution sprayed on quantum dot light emitting layer through atomization process, the spray
The speed penetrated is 0.1-1mL/min, and speed is too low, is takeed a long time, speed is excessively high will lead to can not be accurately controlled it is thin
The homogeneity and thickness of film (the first boundary layer).The time of the injection is 5-180s, the time is too short can not be formed it is complete thin
Film, overlong time will lead to that film is blocked up, influence the performance of device.
In described the step of heating the first interlayer materials solution through atomization process ejected, the mode of the heating
For infrared heating or microwave heating, this is because this heating method may be implemented quickly and uniformly to heat first；Secondly this
Kind heating method is not contacted with reactant, will not pollute reactant, is conducive to the cleaning for keeping target product；This heating of third
Mode can to avoid in Resistant heating to only gear of atomized liquid, that is, use Resistant heating mode when, drop is fallen
Resistance wire can be passed through when lower, so that a part of liquid is fallen on resistance wire.And it uses similar to infrared or microwave heating
Mode can be to avoid such situation.
In described the step of heating the first interlayer materials solution through atomization process ejected, the temperature of the heating
It is 80-300 DEG C.The too low liquid that can not be removed in solution of temperature, temperature is excessively high, will cause in the first interlayer materials solution
Organic matter decomposes or oxidation.
Preferably, first boundary layer with a thickness of 2-20nm, film thickness is excessively thin, be easy can not to be formed one layer it is complete
Film, thickness it is blocked up influence charge transmission, reduce the performance of device.
Preferably, before the step of preparing anode on the first boundary layer, further includes: prepare hole on the first boundary layer
Functional layer, the hole functional layer is between the first boundary layer and anode.Wherein the hole functional layer includes hole injection
At least one of layer and hole transmission layer.In other words, the hole functional layer can be hole transmission layer；Or sky
Cave implanted layer；It can also simultaneously include hole transmission layer and hole injection layer, wherein the hole injection layer and the top electrode
Overlapping.The present invention when using HTL or HIL of whole soln method preparation transoid QLED device, causes QDs layers for the prior art
The problem of influence, can effectively be prevented by the way that one layer of first boundary layer is arranged between quantum dot light emitting layer and hole functional layer
On being influenced caused by QDs layers when solwution method prepares HTL or HIL of transoid QLED device.And the solvent of first boundary layer and
The solvent of HTL or HIL forms orthogonal solvents, is polar solvent, such as alcohol or water.
Preferably, before the step of preparing quantum dot light emitting layer on cathode, further includes: prepare electric function on cathode
Layer, for the electronic work ergosphere between cathode and quantum dot light emitting layer, the electronic work ergosphere includes electron transfer layer and electricity
At least one of sub- implanted layer.In other words, the electronic work ergosphere can be electron transfer layer；It may be electron injection
Layer；It can also simultaneously include electron transfer layer and electron injecting layer, wherein the electron injecting layer and the cathode overlap.
It is further preferred that before the step of preparing quantum dot light emitting layer on electronic work ergosphere, further includes: pass through atomization
Method second interface layer is prepared on electronic work ergosphere, the second interface layer is located at electronic work ergosphere and quantum dot light emitting layer
Between, the second interface layer is metal oxide layer or organic polymer layers.The present invention is for existing electronic work ergosphere and amount
There are problems that electric charge transfer between son point luminescent layer, by preparing the 2nd IL between electronic work ergosphere and quantum dot light emitting layer
Layer avoids the formation of electrification QD, subtracts to effectively avoid the electric charge transfer between electronic work ergosphere and quantum dot light emitting layer
Few QD's is quenched, and improves the fluorescence efficiency of QD, and then improve the efficiency of device.And general the 2nd IL layers of solwution method preparation,
Its solvent can wash away part electric function layer material.Therefore, the present invention is above-mentioned existing for general solwution method in order to solve
Problem prepares the described 2nd IL layers by the solution methods of atomization, when existing solwution method effectively being avoided to prepare the 2nd IL layers in this way
The problem of electronic work ergosphere is impacted.It should be noted that the detail and described first about the second interface layer
Boundary layer is identical, and details are not described herein.
Preferably, the material of the cathode can be selected from one of ITO, FTO, ATO, AZO or a variety of.
Preferably, the material of the electron injecting layer can be selected from the metals such as Ca, Ba of low work function, can also be selected from
CsF、LiF、CsCO3Equal compounds, can also be other Electrolyte type electron injecting layer materials.
Preferably, the material of the electron transfer layer can be selected from the material with good electronic transmission performance, such as can
Think but be not limited to ZnO, TiO of N-shaped2、Fe2O3、SnO2、Ta2O3, one of AlZnO, ZnSnO, InSnO etc. or a variety of.Into
One step is preferred, and the material of the electron transfer layer is the ZnO of N-shaped.It is further preferred that the electron transfer layer with a thickness of
10-60nm。
Preferably, the material of the quantum dot light emitting layer (QDs) can be selected from common red light quantum point, green quantum
One of point, blue light quantum point, gold-tinted quantum dot, infrared light quantum dot and ultraviolet light quantum dot are a variety of.Further preferably
, the quantum dot light emitting layer with a thickness of 5-50nm.
Preferably, the material of the hole transmission layer can be selected from NiO, CuO, CuS, VOx、WOx、MoOxOne of or
It is a variety of；It can also be one or more selected from PEDOT:PSS, TFB, PVK, Poly-TPD, TCTA, CBP, mCP, HAT-CN, NPB.
It is further preferred that the hole transmission layer with a thickness of 0-100nm.When the hole transmission layer is with a thickness of 0nm, at this time
QLED structure in boundary layer also assume responsibility for the effect of hole transmission layer.
Preferably, the material of the hole injection layer can be selected from NiO, CuO, CuS, VOx、WOx、MoOxOne of or
It is a variety of；It can also be one or more selected from PEDOT:PSS, TFB, PVK, Poly-TPD, TCTA, CBP, mCP, HAT-CN, NPB.
It is further preferred that the hole injection layer with a thickness of 20-100nm.
Preferably, the material of the anode can be selected from one of Ag, Al, Cu, Au or a variety of.It is further preferred that
The anode with a thickness of 50-200nm.
The present invention also provides a kind of QLED devices, wherein is prepared using the preparation method of QLED device of the present invention
It forms.
Technical solution of the present invention is described in detail below by specific embodiment.
Embodiment 1
The preparation method of transoid QLED device, comprising the following steps:
Use spin-coating method that ZnO concentration is arranged for the ZnO liquid deposition of 30mg/mL ITO lamination described in ITO(in substrate first
On) on, wherein revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain ETL layers；
Then using spin-coating method by luminescent quantum dot concentration is the luminescent quantum dot liquid deposition of 30mg/mL on ETL layer, wherein
Revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain QD layers；
Then by AlCl3It is dissolved in 2- methyl ethanol solvent and AlCl is prepared3Concentration is the AlCl of 10mg/mL3Solution, then
By AlCl3It is sprayed on QD layers with jet velocity for 0.3mL/min after solution atomization processing, and by using infrared heating
Method, 200 DEG C is heated rapidly to the solution of ejection, injection 30s obtains Al2O3Boundary layer.
Then using spin-coating method by TFB concentration is the TFB liquid deposition of 8g/mL in Al2O3On boundary layer, wherein revolving speed
3Krpm, and 15min is made annealing treatment under conditions of temperature is 120 DEG C, obtain htl layer；
Then it uses spin-coating method by PEDOT:PSS liquid deposition on htl layer, wherein revolving speed 5Krpm, and is 120 DEG C in temperature
Under conditions of make annealing treatment 15min, obtain HIL layers；
Then use Al that the Al metal electrode that a layer thickness is 100nm is deposited for raw material；
It is finally packaged, obtains transoid QLED device architecture as shown in Figure 2.
Embodiment 2
The preparation method of transoid QLED device, comprising the following steps:
Use spin-coating method that ZnO concentration is arranged for the ZnO liquid deposition of 30mg/mL ITO lamination described in ITO(in substrate first
On) on, wherein revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain ETL layers；
Then by AlCl3It is dissolved in 2- methyl ethanol solvent and AlCl is prepared3Concentration is the AlCl of 10mg/mL3Solution, then
By AlCl3It is sprayed on ETL layers with jet velocity for 0.3mL/min after solution atomization processing, and is added by using infrared
The method of heat is heated rapidly to 200 DEG C to the solution of ejection, and injection 30s obtains Al2O3Boundary layer.
Then using spin-coating method by luminescent quantum dot concentration is the luminescent quantum dot liquid deposition of 30mg/mL in Al2O3Interface
On layer, wherein revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain QD layers；
Then by AlCl3It is dissolved in 2- methyl ethanol solvent and AlCl is prepared3Concentration is the AlCl of 10mg/mL3Solution, then
AlCl3It is sprayed on QD layers with jet velocity for 0.3mL/min after solution atomization processing, and by using infrared heating
Method is heated rapidly to 200 DEG C to the solution of ejection, and injection 30s obtains Al2O3Boundary layer.
Then using spin-coating method by TFB concentration is the TFB liquid deposition of 8g/mL in Al2O3On boundary layer, wherein revolving speed
3Krpm, and 15min is made annealing treatment under conditions of temperature is 120 DEG C, obtain htl layer；
Then it uses spin-coating method by PEDOT:PSS liquid deposition on htl layer, wherein revolving speed 5Krpm, and is 120 DEG C in temperature
Under conditions of make annealing treatment 15min, obtain HIL layers；
Then use Al that the Al metal electrode that a layer thickness is 100nm is deposited for raw material；
It is finally packaged, obtains transoid QLED device architecture as shown in Figure 3.
Embodiment 3
The preparation method of transoid QLED device, comprising the following steps:
Use spin-coating method that ZnO concentration is arranged for the ZnO liquid deposition of 30mg/mL ITO lamination described in ITO(in substrate first
On) on, wherein revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain ETL layers；
Then using spin-coating method by luminescent quantum dot concentration is the luminescent quantum dot liquid deposition of 30mg/mL on ETL layer, wherein
Revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain QD layers；
Then PVP is dissolved in the PVP solution for being prepared that PVP concentration is 10mg/mL in alcohol solvent, then by PVP solution mist
It is sprayed on QD layers with jet velocity for 0.2mL/min after change processing, and by using the method for infrared heating, to ejection
Solution be heated rapidly to 100 DEG C, injection 30s obtains PVP boundary layer.
Then using spin-coating method by TFB concentration is the TFB liquid deposition of 8g/mL on PVP boundary layer, wherein revolving speed
3Krpm, and 15min is made annealing treatment under conditions of temperature is 120 DEG C, obtain htl layer；
Then it uses spin-coating method by PEDOT:PSS liquid deposition on htl layer, wherein revolving speed 5Krpm, and is 120 DEG C in temperature
Under conditions of make annealing treatment 15min, obtain HIL layers；
Then use Al that the Al metal electrode that a layer thickness is 100nm is deposited for raw material；
It is finally packaged, obtains transoid QLED device architecture as shown in Figure 4.
Embodiment 4
The preparation method of transoid QLED device, comprising the following steps:
Use spin-coating method that ZnO concentration is arranged for the ZnO liquid deposition of 30mg/mL ITO lamination described in ITO(in substrate first
On) on, middling speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain ETL layers；
Then PVP is dissolved in the PVP solution for being prepared that PVP concentration is 10mg/mL in alcohol solvent, then by PVP solution mist
It is sprayed on ETL layers with jet velocity for 0.2mL/min after change processing, and by using the method for infrared heating, to spray
Solution out is heated rapidly to 100 DEG C, and injection 30s obtains PVP boundary layer.
Then using spin-coating method by luminescent quantum dot concentration is the luminescent quantum dot liquid deposition of 30mg/mL at the interface PVP
On layer, wherein revolving speed 3Krpm, and 15min is made annealing treatment under conditions of temperature is 80 DEG C, obtain QD layers；
Then by AlCl3It is dissolved in 2- methyl ethanol solvent and AlCl is prepared3Concentration is the AlCl of 10mg/mL3Solution, then
By AlCl3It is sprayed on QD layers with jet velocity for 0.3mL/min after solution atomization processing, and by using infrared heating
Method, 200 DEG C is heated rapidly to the solution of ejection, injection 30s obtains Al2O3Boundary layer.
Then using spin-coating method by TFB concentration is the TFB liquid deposition of 8g/mL in Al2O3On boundary layer, wherein revolving speed
3Krpm, and 15min is made annealing treatment under conditions of temperature is 120 DEG C, obtain htl layer；
Then it uses spin-coating method by PEDOT:PSS liquid deposition on htl layer, wherein revolving speed 5Krpm, and is 120 DEG C in temperature
Under conditions of make annealing treatment 15min, obtain HIL layers；
Then use Al that the Al metal electrode that a layer thickness is 100nm is deposited for raw material；
It is finally packaged, obtains transoid QLED device architecture as shown in Figure 5.
In conclusion the present invention prepares one layer of first boundary layer (the by the solution methods of atomization in anode and QD layers
One IL layers), on influence caused by QD layers when preventing solwution method from preparing HTL or HIL, the described first IL layers can also be passivated quantum dot
The defect state for the layer surface that shines, to improve the efficiency of device.The present invention is also by electronic work ergosphere and quantum dot light emitting
IL layers of preparation the 2nd, to effectively avoid the electric charge transfer between electronic work ergosphere and quantum dot light emitting layer, avoids between layer
The formation of electrification QD, reduces being quenched for QD, improves the fluorescence efficiency of QD, and then improve the efficiency of device.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of preparation method of QLED device, which comprises the following steps:
Quantum dot light emitting layer is prepared on cathode；
The first boundary layer is prepared on quantum dot light emitting layer by the method for atomization, first boundary layer is metal oxide layer
Or organic polymer layers；
Anode is prepared on the first boundary layer, obtains QLED device.
2. the preparation method of QLED device according to claim 1, which is characterized in that prepare anode on the first boundary layer
The step of before, further includes: on the first boundary layer prepare hole functional layer, the hole functional layer be located at the first boundary layer and
Between anode.
3. the preparation method of -2 described in any item QLED devices according to claim 1, which is characterized in that pass through the method for atomization
Include: in the step of preparing the first boundary layer on quantum dot light emitting layer
The first interlayer materials solution is prepared, the first interlayer materials solution is molten for the salting liquid or organic polymer of metal
Liquid；
Atomization process is carried out to the first interlayer materials solution；
The first interlayer materials solution through atomization process is sprayed on quantum dot light emitting layer；
The the first interlayer materials solution through atomization process ejected is heated, the solvent in the first interlayer materials solution is waved
Hair, and the first boundary layer is prepared on quantum dot light emitting layer.
4. the preparation method of QLED device according to claim 3, which is characterized in that the first interlayer materials solution
Selected from AlCl3One of solution, PVP solution, PMMA solution, PVC solution and PEI solution；
And/or in the first interlayer materials solution, the concentration of the first interlayer materials is 5-60mg/mL；
And/or in the step of heating the first interlayer materials solution through atomization process ejected, the temperature of the heating is
80-300℃；
And/or in the step of heating the first interlayer materials solution through atomization process ejected, the mode of the heating is
Infrared heating or microwave heating.
5. the preparation method of QLED device according to claim 1, which is characterized in that first boundary layer with a thickness of
2-20nm。
6. the preparation method of QLED device according to claim 1, which is characterized in that prepare quantum dot light emitting on cathode
Before the step of layer, further includes: prepare electronic work ergosphere on cathode, the electronic work ergosphere is located at cathode and quantum dot light emitting
Between layer.
7. the preparation method of QLED device according to claim 6, which is characterized in that prepare quantum on electronic work ergosphere
Before the step of point luminescent layer, further includes: second interface layer is prepared on electronic work ergosphere by the method for atomization, described second
For boundary layer between electronic work ergosphere and quantum dot light emitting layer, the second interface layer is metal oxide layer or organic polymer
Nitride layer.
8. the preparation method of QLED device according to claim 7, which is characterized in that by the method for atomization in electronic work
The step of preparation second interface layer, includes: on ergosphere
Second interface layer material solution is prepared, the second interface layer material solution is molten for the salting liquid or organic polymer of metal
Liquid；
Atomization process is carried out to second interface layer material solution；
The second interface layer material solution through atomization process is sprayed on electronic work ergosphere；
The second interface layer material solution through atomization process ejected is heated, the solvent in second interface layer material solution is waved
Hair, and second interface layer is prepared on electronic work ergosphere.
9. the preparation method of QLED device according to claim 8, which is characterized in that the second interface layer material solution
Selected from AlCl3One of solution, PVP solution, PMMA solution, PVC solution and PEI solution；
And/or in the second interface layer material solution, the concentration of second contact surface layer material is 5-60mg/mL；
And/or in the step of heating the second interface layer material solution through atomization process ejected, the temperature of the heating is
80-300℃；
And/or in the step of heating the second interface layer material solution through atomization process ejected, the mode of the heating is
Infrared heating or microwave heating.
10. a kind of QLED device, which is characterized in that using the preparation method of the described in any item QLED devices of claim 1-9
It is prepared.
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