CN106410058A - Method for manufacturing quantum-dot light-emitting device and quantum-dot light-emitting device - Google Patents
Method for manufacturing quantum-dot light-emitting device and quantum-dot light-emitting device Download PDFInfo
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- CN106410058A CN106410058A CN201610987587.9A CN201610987587A CN106410058A CN 106410058 A CN106410058 A CN 106410058A CN 201610987587 A CN201610987587 A CN 201610987587A CN 106410058 A CN106410058 A CN 106410058A
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- dot light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a method for manufacturing a quantum-dot light-emitting device. The method comprises: a substrate is provided and an anode is manufactured on the substrate by sputtering deposition; a hole injection layer is manufactured on the anode by using a suspended coating, atomization or ink-jet printing process; the hole injection layer is coated with a hole transport layer by using a suspended coating, atomization or ink-jet printing process; the hole transport layer is coated with a quantum-dot light-emitting layer by using a suspended coating, atomization or ink-jet printing process; an IZO electron transport layer is deposited on the quantum-dot light-emitting layer based on sputtering deposition or a solution method; and a cathode is manufactured on the IZO electron transport layer by using a thermal evaporation process, thereby obtaining a corresponding quantum-dot light-emitting device. In addition, the invention also provides a quantum-dot light-emitting device. According to the invention, the IZO material with the indium doping proportion of 0.01% to 20% is used for manufacturing the electron transport layer, so that the light-emitting efficiency of the quantum-dot light-emitting device is improved.
Description
Technical field
The present invention relates to luminescent device makes field, more particularly to a kind of manufacture method of quantum dot light emitting device and amount
Son point luminescent device.
Background technology
, because having wide colour gamut, low manufacture cost, luminescence spectrum is adjustable and illumination stability inferior is good for quantum dot light emitting device
And receive significant attention, it is therefore more likely that replace OLED to become follow-on core display device.
Wherein quantum dot light emitting device includes anode, hole injection layer, hole transmission layer, quantum dot light emitting layer, electronics biography
Defeated layer (it is provided simultaneously with stopping the effect in hole, transmission electronics and injection electronics) and negative electrode.
ZnO material, due to can play preferable hole barrier effect, has good level-density parameter with negative electrode simultaneously again, and
Material frequently as electron transfer layer.But its electron transport ability is poor, thus can be to corresponding quantum dot light emitting device
Luminous efficiency impacts.
Therefore it is necessary to provide a kind of manufacture method of quantum dot light emitting device and quantum dot light emitting device, existing to solve
The problems of technology.
Content of the invention
It is an object of the invention to provide a kind of quantum dot light emitting device of the luminous efficiency strengthening quantum dot light emitting device
The manufacture method of part and quantum dot light emitting device；Asked with the technology that the luminous efficiency solving existing quantum dot light emitting device is relatively low
Topic.
The embodiment of the present invention provides a kind of manufacture method of quantum dot light emitting device, and it includes：
One substrate is provided, on the substrate anode is made by sputtering sedimentation；
By being coated with, atomization or InkJet printing processes, hole injection layer is made on described anode；
By being coated with, inkjet printing or atomization process, hole transmission layer is applied on described hole injection layer；
By being coated with, inkjet printing or atomization process, quantum dot light emitting layer is applied to described hole transmission layer；
By sputtering sedimentation or solwution method, IZO electric transmission is deposited to described quantum dot light emitting layer；And
By hot evaporation process, described IZO electron transfer layer makes negative electrode, to obtain corresponding quantum dot light emitting device
Part.
Indium doping in the manufacture method of quantum dot light emitting device of the present invention, in described IZO electron transfer layer
Ratio is 0.01% to 20%.
In the manufacture method of quantum dot light emitting device of the present invention, the material of described anode is tin indium oxide；
The material of described hole injection layer is the polymer (PEDOT) of 3,4- ethene dioxythiophene monomer；
The material of described hole transmission layer is triphenyl diamine derivative (TPD), N, N '-diphenyl-N, N '-(1- naphthalene
Base) -1,1 '-biphenyl -4,4 '-diamidogen (NPD), polymer triphenyl diamine derivative (poly-TPD), double (the 9H- click of 4,4'-
Azoles -9- base) biphenyl (CBP) or 8-hydroxyquinoline aluminum (Alq3)；
The material of described quantum dot light emitting layer is cadmium selenide；
The material of described negative electrode is magnesium silver alloy.
In the manufacture method of quantum dot light emitting device of the present invention, described quantum dot light emitting layer include luminescent layer with
And protection shell, the material of described luminescent layer is cadmium selenide, and the material of described protection shell is zinc sulfide.
In the manufacture method of quantum dot light emitting device of the present invention, it is Oleic acid that described luminescent layer dispersion coordinates base,
Trioctyl phosphine oxide or tri octyl phosphine.
In the manufacture method of quantum dot light emitting device of the present invention, described by being coated with, inkjet printing or atomization
Technique, includes before quantum dot light emitting layer being applied to the step of described hole transmission layer：
Solvent drying operation is carried out to described hole transmission layer, so that described hole transmission layer and described quantum dot light emitting
Layer produces and is separated.
The embodiment of the present invention also provides a kind of quantum dot light emitting device, substrate that it includes setting gradually, anode, hole note
Enter layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and negative electrode, wherein said electron transfer layer is indium doping ratio
The IZO electron transfer layer for 0.01% to 20% for the example.
In quantum dot light emitting device of the present invention, the material of described anode is tin indium oxide；
The material of described hole injection layer is the polymer (PEDOT) of 3,4- ethene dioxythiophene monomer；
The material of described hole transmission layer is triphenyl diamine derivative (TPD), N, N '-diphenyl-N, N '-(1- naphthalene
Base) -1,1 '-biphenyl -4,4 '-diamidogen (NPD), polymer triphenyl diamine derivative (poly-TPD), double (the 9H- click of 4,4'-
Azoles -9- base) biphenyl (CBP) or 8-hydroxyquinoline aluminum (Alq3)；
The material of described quantum dot light emitting layer is cadmium selenide；
The material of described negative electrode is magnesium silver alloy.
In quantum dot light emitting device of the present invention, described quantum dot light emitting layer includes luminescent layer and containment vessel
Layer, the material of described luminescent layer is cadmium selenide, and the material of described protection shell is zinc sulfide.
In quantum dot light emitting device of the present invention, described luminescent layer dispersion cooperation base is Oleic acid, trioctylphosphine oxidation
Phosphine or tri octyl phosphine.
Compared to manufacture method and the quantum dot light emitting device of existing quantum dot light emitting device, the quantum dot of the present invention is sent out
The manufacture method of optical device and quantum dot light emitting device are used the IZO material that indium doping ratio is 0.01% to 20% as electronics
Transport layer, improves the luminous efficiency of quantum dot light emitting device；Solve the luminous efficiency of existing quantum dot light emitting device relatively
Low technical problem.
It is that the above of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, make
Describe in detail as follows：
Brief description
Fig. 1 is the flow chart of the preferred embodiment of the manufacture method of quantum dot light emitting device of the present invention；
Fig. 2 is the structural representation of the preferred embodiment of quantum dot light emitting device of the present invention.
Specific embodiment
The explanation of following embodiment is with reference to additional schema, the particular implementation implemented in order to illustrate the present invention may be used to
Example.The direction term that the present invention is previously mentioned, for example " on ", D score, "front", "rear", "left", "right", " interior ", " outward ", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term of use is to illustrate and understand the present invention, and is not used to
Limit the present invention.
In in figure, the similar unit of structure is to be represented with identical label.
The quantum dot light emitting device of the present invention can be as the display element of flat-panel screens, due to this quantum dot light emitting device
There is higher luminous efficiency, therefore can preferably improve the picture display quality of corresponding flat-panel screens.
Refer to Fig. 1, Fig. 1 is the flow chart of the preferred embodiment of the manufacture method of quantum dot light emitting device of the present invention.
The manufacture method of the quantum dot light emitting device of this preferred embodiment includes：
Step S101, provides a substrate, makes anode by sputtering sedimentation on substrate；
Step S102, by being coated with, atomization or InkJet printing processes, makes hole injection layer on anode；
Step S103, by being coated with, inkjet printing or atomization process, hole transmission layer is applied on hole injection layer；
Step S104, carries out solvent drying operation to hole transmission layer, so that hole transmission layer and quantum dot light emitting layer
Produce and be separated；
Step S105, by being coated with, inkjet printing or atomization process, quantum dot light emitting layer is applied to hole transmission layer；
Step S106, by sputtering sedimentation or solwution method, IZO electric transmission is deposited to quantum dot light emitting layer；
Step S107, by hot evaporation process, makes negative electrode, to obtain corresponding quantum dot on IZO electron transfer layer
Luminescent device.
Idiographic flow the following detailed description of each step of the manufacture method of the quantum dot light emitting device of this preferred embodiment.
In step S101, provide a substrate, anode is made by sputtering sedimentation anode material on substrate, here sun
Pole material is preferably tin indium oxide (ITO), to carry out light operation from bottom.Then pass to step S102.
In step s 102, by being coated with, atomization or InkJet printing processes, anode makes hole injection layer, this
In hole input layer material be preferably 3,4- ethene dioxythiophene monomer polymer (PEDOT).Then pass to step
S103.
In step s 103, by being coated with, inkjet printing or atomization process, hole transmission layer is applied to hole injection layer
On, the material of hole transmission layer here is preferably triphenyl diamine derivative (TPD), N, N '-diphenyl-N, N '-(1- naphthalene
Base) -1,1 '-biphenyl -4,4 '-diamidogen (NPD), polymer triphenyl diamine derivative (poly-TPD), double (the 9H- click of 4,4'-
Azoles -9- base) biphenyl (CBP) or 8-hydroxyquinoline aluminum (Alq3).Then pass to step S104.
In step S104, solvent drying operation is carried out to hole transmission layer, so that hole transmission layer is sent out with quantum dot
Photosphere produces and is separated.Due to subsequently needing to be coated with quantum dot light emitting layer, herein for making the hole transmission layer after coating and amount
Son point luminescent layer automatically generates separated, in this step, first carries out solvent drying operation to hole transmission layer.Then pass to walk
Rapid S105.
In step S105, by being coated with, inkjet printing or atomization process, quantum dot light emitting layer is applied to hole transport
Layer.The material of quantum dot light emitting layer here is preferably cadmium selenide (CdSe).Specifically, quantum dot light emitting layer include luminescent layer with
And protection shell, the material of luminescent layer is cadmium selenide, and the material of protection shell is zinc sulfide (ZnS).Luminescent layer dispersion cooperation base
Can have the molecule of Long carbon chain structure for Oleic acid, trioctyl phosphine oxide (TOPO) or tri octyl phosphine (TOP) etc..Then pass to step
S106.
In step s 106, by sputtering sedimentation or solwution method, IZO electric transmission is deposited to quantum dot light emitting layer.
Here IZO electron transfer layer can be 0.01% to 20% for indium doping ratio, i.e. the phosphide material of IZO electron transfer layer and zinc material
The ratio of material is 0.01% to 20%.After indium mixes zinc oxide, an electronics can be provided more, so that quantum dot light emitting layer
Electron transport property improves.The electron concentration of the IZO electron transfer layer after adulterating in addition increases, and hole is through IZO electric transmission
During layer, it is more prone to be combined with electronics, improves the hole blocking ability of IZO electron transfer layer.Then pass to step S107.
In step s 107, by hot evaporation process, IZO electron transfer layer makes negative electrode, to be measured accordingly
Son point luminescent device.Here cathode material is preferably magnesium silver alloy.
So complete the manufacturing process of the manufacture method of quantum dot light emitting device of this preferred embodiment.
The manufacture method of the quantum dot light emitting device of this preferred embodiment is 0.01% to 20% using indium doping ratio
IZO material, as electron transfer layer, improves the luminous efficiency of quantum dot light emitting device.
The present invention also provides a kind of quantum dot light emitting device, refer to Fig. 2, and Fig. 2 is the quantum dot light emitting device of the present invention
Preferred embodiment structural representation.Substrate 21 that the quantum dot light emitting device 20 of this preferred embodiment includes setting gradually,
Anode 22, hole injection layer 23, hole transmission layer 24, quantum dot light emitting layer 25, electron transfer layer 26 and negative electrode 27.
The material of its Anodic 22 is tin indium oxide；
The material of hole injection layer 23 is the polymer (PEDOT) of 3,4- ethene dioxythiophene monomer；
The material of hole transmission layer 24 is triphenyl diamine derivative (TPD), N, N '-diphenyl-N, N '-(1- naphthyl)-
1,1 '-biphenyl -4,4 '-diamidogen (NPD), polymer triphenyl diamine derivative (poly-TPD), the double (9H- carbazole -9- of 4,4'-
Base) biphenyl (CBP) or 8-hydroxyquinoline aluminum (Alq3)；
The material of quantum dot light emitting layer 25 is cadmium selenide；
The IZO electron transfer layer that electron transfer layer 26 is 0.01% to 20% for indium doping ratio；
The material of negative electrode 27 is magnesium silver alloy.
Wherein quantum dot light emitting layer 26 includes luminescent layer and protection shell, and the material of luminescent layer is cadmium selenide, containment vessel
The material of layer is zinc sulfide (ZnS).Luminescent layer dispersion cooperation base can be Oleic acid, trioctyl phosphine oxide (TOPO) or tri octyl phosphine
Etc. (TOP) there is the molecule of Long carbon chain structure.
The indium doping ratio in IZO electron transfer layer in the quantum dot light emitting device 20 of this preferred embodiment is 0.01%
To 20%, that is, the quantitative proportion of the phosphide atom of IZO electron transfer layer and zinc atom is 0.01% to 20%.Indium mixes zinc oxide
Afterwards, an electronics can be provided, so that the electron transport property of quantum dot light emitting layer improves more.In addition the IZO electricity after adulterating
The electron concentration of sub- transport layer increases, and hole, when IZO electron transfer layer, is more prone to be combined with electronics, improves IZO electronics
The hole blocking ability of transport layer.
The Making programme of the quantum dot light emitting device 20 of this preferred embodiment can refer to the system of above-mentioned quantum dot light emitting device
Make the associated description in the preferred embodiment of method.
The manufacture method of quantum dot light emitting device of the present invention and quantum dot light emitting device using indium doping ratio are
0.01% to 20% IZO material, as electron transfer layer, improves the luminous efficiency of quantum dot light emitting device；Solve existing
Quantum dot light emitting device the relatively low technical problem of luminous efficiency.
In sum although the present invention is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit
The present invention processed, those of ordinary skill in the art, without departing from the spirit and scope of the present invention, all can make various change and profit
Decorations, therefore protection scope of the present invention is defined by the scope that claim defines.
Claims (10)
1. a kind of manufacture method of quantum dot light emitting device is it is characterised in that include：
One substrate is provided, on the substrate anode is made by sputtering sedimentation；
By being coated with, atomization or InkJet printing processes, hole injection layer is made on described anode；
By being coated with, inkjet printing or atomization process, hole transmission layer is applied on described hole injection layer；
By being coated with, inkjet printing or atomization process, quantum dot light emitting layer is applied to described hole transmission layer；
By sputtering sedimentation or solwution method, IZO electric transmission is deposited to described quantum dot light emitting layer；And
By hot evaporation process, described IZO electron transfer layer makes negative electrode, to obtain corresponding quantum dot light emitting device.
2. the manufacture method of quantum dot light emitting device according to claim 1 is it is characterised in that described IZO electric transmission
Indium doping ratio in layer is 0.01% to 20%.
3. quantum dot light emitting device according to claim 1 manufacture method it is characterised in that
The material of described anode is tin indium oxide；
The material of described hole injection layer is the polymer (PEDOT) of 3,4- ethene dioxythiophene monomer；
The material of described hole transmission layer is triphenyl diamine derivative (TPD), N, N '-diphenyl-N, N '-(1- naphthyl) -1,
1 '-biphenyl -4,4 '-diamidogen (NPD), polymer triphenyl diamine derivative (poly-TPD), 4,4'- double (9H- carbazole -9- base)
Biphenyl (CBP) or 8-hydroxyquinoline aluminum (Alq3)；
The material of described quantum dot light emitting layer is cadmium selenide；
The material of described negative electrode is magnesium silver alloy.
4. the manufacture method of quantum dot light emitting device according to claim 3 is it is characterised in that described quantum dot light emitting layer
Including luminescent layer and protection shell, the material of described luminescent layer is cadmium selenide, and the material of described protection shell is zinc sulfide.
5. the manufacture method of quantum dot light emitting device according to claim 4 is it is characterised in that the dispersion of described luminescent layer is joined
Conjunction base is Oleic acid, trioctyl phosphine oxide or tri octyl phosphine.
6. quantum dot light emitting device according to claim 1 manufacture method it is characterised in that described by being coated with, spray
Ink prints or atomization process, includes before quantum dot light emitting layer being applied to the step of described hole transmission layer：
Solvent drying operation is carried out to described hole transmission layer, so that described hole transmission layer is produced with described quantum dot light emitting layer
Raw separated.
7. a kind of quantum dot light emitting device it is characterised in that include set gradually substrate, anode, hole injection layer, hole pass
Defeated layer, quantum dot light emitting layer, electron transfer layer and negative electrode, wherein said electron transfer layer for indium doping ratio be 0.01% to
20% IZO electron transfer layer.
8. quantum dot light emitting device according to claim 7 is it is characterised in that the material of described anode is tin indium oxide；
The material of described hole injection layer is the polymer (PEDOT) of 3,4- ethene dioxythiophene monomer；
The material of described hole transmission layer is triphenyl diamine derivative (TPD), N, N '-diphenyl-N, N '-(1- naphthyl) -1,
1 '-biphenyl -4,4 '-diamidogen (NPD), polymer triphenyl diamine derivative (poly-TPD), 4,4'- double (9H- carbazole -9- base)
Biphenyl (CBP) or 8-hydroxyquinoline aluminum (Alq3)；
The material of described quantum dot light emitting layer is cadmium selenide；
The material of described negative electrode is magnesium silver alloy.
9. quantum dot light emitting device according to claim 8 is it is characterised in that described quantum dot light emitting layer includes luminescent layer
And protection shell, the material of described luminescent layer is cadmium selenide, and the material of described protection shell is zinc sulfide.
10. quantum dot light emitting device according to claim 9 is it is characterised in that described luminescent layer dispersion cooperation base is oil
Acid, trioctyl phosphine oxide or tri octyl phosphine.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108735905A (en) * | 2017-04-20 | 2018-11-02 | Tcl集团股份有限公司 | A kind of QLED devices and preparation method |
| CN109768173A (en) * | 2018-12-25 | 2019-05-17 | 武汉理工大学 | A kind of full inkjet printing inverted structure light emitting diode with quantum dots preparation method |
| CN109935739A (en) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | Eurymeric QLED device and preparation method thereof |
| CN109962133A (en) * | 2017-12-26 | 2019-07-02 | Tcl集团股份有限公司 | A kind of QLED device and preparation method thereof |
| CN111354773A (en) * | 2020-03-20 | 2020-06-30 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of flexible display panel |
| CN114883507A (en) * | 2022-05-07 | 2022-08-09 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting device, manufacturing method of organic light-emitting device and display panel |
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| CN114883507A (en) * | 2022-05-07 | 2022-08-09 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting device, manufacturing method of organic light-emitting device and display panel |
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