CN109936336B - Voltage controlled oscillator for zero intermediate frequency digital interphone - Google Patents
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Abstract
The invention provides a voltage-controlled oscillator for a zero intermediate frequency digital interphone, wherein the input end of a voltage-controlled voltage source of the voltage-controlled oscillator is electrically connected with a first capacitor and a first inductor, the first inductor is electrically connected with a variable capacitance diode and a second capacitor, the second capacitor is electrically connected with a third capacitor, a lambda/4 type TEM wave dielectric resonator and a fourth capacitor, the fourth capacitor is electrically connected with a fifth capacitor, a second inductor and a pin B of a triode, the fifth capacitor is electrically connected with a sixth capacitor and a seventh capacitor, the seventh capacitor is electrically connected with a pin E of the triode and a fourth resistor, the fourth resistor is electrically connected with the fourth inductor, the second inductor is electrically connected with the first resistor and the second resistor, the first resistor is electrically connected with a power supply, the third inductor and the third resistor, the third inductor is electrically connected with a pin C of the triode, the third resistor and an eighth capacitor, and the eighth capacitor is electrically connected with the output end of the voltage-controlled voltage source. The invention can solve the problem of poor consistency of the resonant frequency of the voltage-controlled oscillator at 700MHz and higher.
Description
Technical Field
The invention relates to the technical field of voltage-controlled oscillators, in particular to a voltage-controlled oscillator for a zero intermediate frequency digital interphone.
Background
In the field of wireless communications, the design of Voltage Controlled Oscillators (VCOs) is of critical importance. The performance index of a Voltage Controlled Oscillator (VCO) is not good, and the communication quality and the communication distance of the communication device are directly affected. At present, a Voltage Controlled Oscillator (VCO) is generally designed in a conventional capacitance three-terminal LC oscillating circuit form (i.e., three terminals of an LC loop are respectively connected to three electrodes of a transistor, and a feedback network is completed by a capacitance element) or an improved LC oscillating circuit form. This form of voltage controlled oscillator is frequency selective by an LC tank.
FIG. 5 is an equivalent circuit of a simplified capacitance three-terminal LC oscillator circuit, and FIG. 4 is an actual circuit of a capacitance three-terminal oscillator with an oscillation frequencyThe rate can be expressed as:
(where L inductance units: henry (H); capacitance units: farad (F); F frequency units: hertz (Hz)).
In general, in design, the higher the accuracy of capacitance and inductance in an LC loop in a VCO circuit, the better. Thus, the VCO oscillation frequency is more consistent under the same voltage Control Voltage (CV). Because the capacitive part of the VCO resonant network is formed by connecting a plurality of capacitors in series or in parallel, the influence on the consistency of voltage-Controlled Voltage (CV) is smaller than that of the main oscillator inductance, and the capacitor can meet the requirement generally with 5 percent of precision. And the precision requirement of the main vibration inductor is better than 2 percent. For example, in a 400MHz VCO, the frequency deviation caused by the main oscillator inductance using 8.2nh,2% accuracy inductance is maximum ± 4.04MHz, and the frequency deviation possibly caused by 5% accuracy inductance is maximum ± 10.4MHz, in practical application, the tuning sensitivity KV =20MHz/V of the voltage controlled oscillator is usually designed, the 2% accuracy inductance influence CV is ± 0.2V, and the 5% accuracy inductance influence CV is ± 0.52V; for mass production this results in a large difference in the VCO frequency for the same voltage control voltage. Thereby causing great difference of individual performance of the product and failing to meet the production requirement. So the dominant vibration inductance accuracy is usually at least 2% in the design.
However, as chip technology develops, the demand for chip integration also increases. From the current technical trend, the technical scheme of professional wireless communication receiving systems basically adopts a zero intermediate frequency receiving structure, so that the technical scheme is convenient for chip packaging and integration. Compared with the traditional professional wireless communication field, the super-heterodyne receiving structure is adopted. The chip with the zero-if receiving structure usually needs the oscillation frequency of a Voltage Controlled Oscillator (VCO) to be 2 times of the frequency of a received useful signal, which is mainly to generate an IQ signal by dividing the frequency by 2 times of the VCO, and simultaneously, can better solve the problem of direct current offset (DC offset) generation and the problem of transmitting end frequency pulling.
(1) If a VCO with 800MHz is needed for 400MHz communication frequency in a zero intermediate frequency scheme, if a traditional LC capacitor three-terminal voltage-controlled oscillator is adopted, a main oscillator inductor adopts about 3nH, and the current 3nH precision inductor is 3nH +/-0.1 nH. Equivalent to an inductance of 3.3% accuracy, the frequency deviation caused is at most + -12.1 MHz, which basically cannot meet the production requirements. If the influence of high and low temperatures on the inductance value is taken into consideration. The resulting frequency deviation will be larger.
(2) If the precision winding inductor is still adopted as the main vibration inductor at 700MHz and higher, the value of the capacitor C in the resonance network is required to be too small, even less than 1pF. The precision is not easy to control, and at the moment, the C/L value is too small, the phase noise is obviously deteriorated, and the product performance is directly deteriorated.
In sum, the conventional LC vco with smaller inductance and higher accuracy is not designed for 700MHz and higher frequency.
Disclosure of Invention
In order to solve the above-mentioned disadvantages of the prior art, the present invention provides a voltage controlled oscillator for a zero-if digital interphone, so as to overcome the drawbacks of the prior art.
In order to achieve the above object, the present invention provides a voltage-controlled oscillator for a zero intermediate frequency digital interphone, where the voltage-controlled oscillator includes a voltage-controlled voltage source input end, a first capacitor, a first inductor, a varactor, a second capacitor, a third capacitor, a λ/4 type TEM wave dielectric resonator, a fourth capacitor, a fifth capacitor, a sixth capacitor, a seventh capacitor, a triode, a second inductor, a first resistor, a second resistor, a third inductor, a third resistor, an eighth capacitor, a fourth resistor, a fourth inductor, and a voltage-controlled voltage source output end; the input end of the voltage-controlled voltage source is respectively and electrically connected with a pin 1 of the first capacitor and a pin 1 of the first inductor, and a pin 2 of the first capacitor is grounded; a pin 2 of the first inductor is electrically connected with a pin 2 of the variable capacitance diode and a pin 1 of the second capacitor respectively, and the pin 1 of the variable capacitance diode is grounded; the pin 2 of the second capacitor is respectively and electrically connected with the pin 1 of the third capacitor, the pin 1 of the lambda/4 type TEM wave dielectric resonator and the pin 1 of the fourth capacitor, the pin 2 of the third capacitor is grounded, and the pin 2 of the lambda/4 type TEM wave dielectric resonator is grounded; pin 2 of the fourth capacitor is respectively and electrically connected with pin 1 of the fifth capacitor, pin 2 of the second inductor and pin B of the triode, pin 2 of the fifth capacitor is respectively and electrically connected with pin 1 of the sixth capacitor and pin 1 of the seventh capacitor, pin 2 of the sixth capacitor is grounded, pin 2 of the seventh capacitor is respectively and electrically connected with pin E of the triode and pin 1 of the fourth resistor, pin 2 of the fourth resistor is electrically connected with pin 1 of the fourth inductor, and pin 2 of the fourth inductor is grounded; pin 1 of the second inductor is respectively electrically connected with pin 2 of the first resistor and pin 1 of the second resistor, pin 2 of the second resistor is grounded, pin 1 of the first resistor is respectively electrically connected with the power supply, pin 1 of the third inductor and pin 1 of the third resistor, pin 2 of the third inductor is respectively electrically connected with pin C of the triode, pin 2 of the third resistor and pin 1 of the eighth capacitor, and pin 2 of the eighth capacitor is electrically connected with the output end of the voltage-controlled voltage source.
By adopting the technical scheme, the lambda/4 type TEM wave dielectric resonator is adopted to replace a high-precision main oscillator inductor, so that the problem of poor consistency of resonant frequency of the voltage-controlled oscillator at 700MHz and higher frequencies can be completely solved, and the problem of poor phase noise index of the voltage-controlled oscillator caused by adopting special high-precision inductance and smaller capacitance value is avoided; not only meets the production requirements, but also ensures the product performance.
As a further explanation of the voltage controlled oscillator according to the present invention, it is preferable that the λ/4 type TEM wave dielectric resonator is equivalent to an RLC resonant network connected in parallel by a capacitor, a resistor and an inductor.
As a further explanation of the voltage-controlled oscillator according to the present invention, it is preferable that the network parameters R, L, C of the λ/4 type TEM wave dielectric resonator (W1) are respectively expressed as:
wherein the content of the first and second substances,
f is the nominal frequency in MHz; s is the length of the side of the cross section of the lambda/4 wavelength type TEM wave medium resonator, and the unit is mm; d is the inner hole diameter of the lambda/4 wavelength type TEM wave medium resonator, and the unit is mm; er is the dielectric constant of the resonator material and is determined by the cavity material of the lambda/4 wavelength type TEM wave dielectric resonator (the dielectric parameter of the lambda/4 wavelength type TEM wave dielectric resonator is usually provided by manufacturers); r is equivalent resistance, and the unit is: omega; l is equivalent inductance, and the unit is: h; c is equivalent capacitance, and the unit is: f; z0 is the characteristic impedance in units of: omega; q is a figure of merit (is a number).
As a further description of the voltage-controlled oscillator according to the present invention, it is preferable that the nominal frequency of the λ/4 type TEM wave dielectric resonator is:
wherein f is in MHz; l is the length of the resonator in mm; er is the dielectric constant of the resonator material and is determined by the cavity material of the lambda/4-wavelength TEM wave dielectric resonator W1 (the dielectric parameters of the lambda/4-wavelength TEM wave dielectric resonator are generally provided by manufacturers).
The invention has the following beneficial effects: the invention adopts the lambda/4 type TEM wave dielectric resonator to replace a high-precision master oscillator inductor, can completely solve the problem of poor consistency of resonant frequency of the voltage-controlled oscillator at 700MHz and higher frequencies, and simultaneously avoids the problem of poor phase noise index of the voltage-controlled oscillator caused by adopting special high-precision inductor and smaller capacitance; not only meets the production requirements, but also ensures the product performance.
Drawings
FIG. 1 is a circuit diagram of a voltage controlled oscillator of the present invention;
FIG. 2 is an RLC resonant network equivalent circuit diagram of a λ/4 type TEM wave dielectric resonator of the present invention;
FIG. 3 is a graph showing the frequency response of an access circuit of a dielectric resonator of a λ/4 TEM wave according to the present invention;
FIG. 4 is a circuit diagram of a prior art capacitor-type three-terminal oscillator;
fig. 5 is an equivalent circuit diagram of a simplified capacitor three-terminal LC oscillating circuit in the prior art.
Detailed Description
To further understand the structure, characteristics and other objects of the present invention, the following detailed description is given with reference to the accompanying preferred embodiments, which are only used to illustrate the technical solutions of the present invention and are not to limit the present invention.
As shown in fig. 1, fig. 1 is a circuit diagram of a voltage controlled oscillator of the present invention; the voltage-controlled oscillator comprises a voltage-controlled voltage source input end CV _ CP, a first capacitor C1, a first inductor L1, a varactor diode D1, a second capacitor C2, a third capacitor C3, a lambda/4 type TEM wave dielectric resonator W1, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, a triode Q1, a second inductor L4, a first resistor R1, a second resistor R2, a third inductor L5, a third resistor R3, an eighth capacitor C8, a fourth resistor R259, a fourth inductor L6 and a voltage-controlled voltage source output end VCO _ OUT; the input end CV _ CP of the voltage-controlled voltage source is respectively and electrically connected with a pin 1 of the first capacitor C1 and a pin 1 of the first inductor L1, and a pin 2 of the first capacitor C1 is grounded; a pin 2 of the first inductor L1 is respectively and electrically connected with a pin 2 of the variable capacitance diode D1 and a pin 1 of the second capacitor C2, and the pin 1 of the variable capacitance diode D1 is grounded; the pin 2 of the second capacitor C2 is respectively and electrically connected with the pin 1 of the third capacitor C3, the pin 1 of the lambda/4 type TEM wave dielectric resonator W1 and the pin 1 of the fourth capacitor C4, the pin 2 of the third capacitor C3 is grounded, and the pin 2 of the lambda/4 type TEM wave dielectric resonator W1 is grounded; pin 2 of the fourth capacitor C4 is electrically connected with pin 1 of the fifth capacitor C5, pin 2 of the second inductor L4 and pin B of the triode Q1, pin 2 of the fifth capacitor C5 is electrically connected with pin 1 of the sixth capacitor C6 and pin 1 of the seventh capacitor C7, pin 2 of the sixth capacitor C6 is grounded, pin 2 of the seventh capacitor C7 is electrically connected with pin E of the triode Q1 and pin 1 of the fourth resistor R259, pin 2 of the fourth resistor R259 is electrically connected with pin 1 of the fourth inductor L6, and pin 2 of the fourth inductor L6 is grounded; second inductance L4's 1 foot is connected with first resistance R1's 2 feet and second resistance R2's 1 foot electricity respectively, second resistance R2's 2 feet ground connection, first resistance R1's 1 foot respectively with the power VCC, third inductance L5's 1 foot and third resistance R3's 1 foot electricity are connected, third inductance L5's 2 feet respectively with triode Q1's C foot, third resistance R3's 2 feet and eighth electric capacity C8's 1 foot electricity are connected, eighth electric capacity C8's 2 feet and voltage-controlled voltage source output VCO _ OUT electricity are connected. The lambda/4 type TEM wave dielectric resonator is adopted to replace a high-precision main oscillator inductor, so that the problem of poor consistency of resonant frequencies of the voltage-controlled oscillator at 700MHz and higher frequencies can be completely solved, and the problem of poor phase noise index of the voltage-controlled oscillator caused by the adoption of special high-precision inductance and smaller capacitance value is avoided; not only meets the production requirements, but also ensures the product performance.
Referring to fig. 2, fig. 2 is an equivalent circuit diagram of an RLC resonance network of a λ/4 type TEM wave dielectric resonator of the present invention; the lambda/4 type TEM wave dielectric resonator W1 is equivalent to an RLC resonant network which is formed by connecting a capacitor C, a resistor R and an inductor L in parallel. The network parameters R, L, C of the λ/4 type TEM wave dielectric resonator W1 are respectively expressed as:
wherein the content of the first and second substances,
wherein f is the nominal frequency in MHz; s is the length of the side of the cross section of the lambda/4 wavelength type TEM wave medium resonator W1, and the unit is mm; d is the inner hole diameter of the lambda/4 wavelength type TEM wave dielectric resonator W1, and the unit is mm; er is a dielectric constant of a material of the lambda/4 wavelength type TEM wave dielectric resonator W1, is determined by a cavity material of the lambda/4 wavelength type TEM wave dielectric resonator W1 and is a constant, and an accurate value is given by a manufacturer through testing; r of formula (1) is the equivalent resistance in units of: omega; l of equation (2) is the equivalent inductance in units of: h; c of formula (3) is the equivalent capacitance in units of: f; z is a linear or branched member 0 Is the characteristic impedance, in units of: omega; q is a figure of merit and is a number.
Referring to FIG. 3, FIG. 3 shows a dielectric resonance of a λ/4 TEM wave of the present inventionA frequency response variation diagram of the resonator access circuit; the nominal frequency of the λ/4 type TEM wave dielectric resonator W1 is expressed as:
wherein f is in MHz; l is the length of the lambda/4 wavelength type TEM wave medium resonator W1 and the unit is mm; er is a dielectric constant of a material of the lambda/4 wavelength type TEM wave dielectric resonator, is determined by a cavity material of the lambda/4 wavelength type TEM wave dielectric resonator W1 and is a constant, and an accurate value is given by a manufacturer in specification parameters of a product.
The electrical characteristics of the lambda/4 type TEM wave dielectric resonator are utilized to replace a high-precision high-Q value winding inductor, and the design of a 700MHz or higher frequency voltage-controlled oscillator is introduced, so that the problem that the production consistency cannot meet the requirement due to insufficient precision of the VCO main oscillator inductor can be perfectly avoided.
Referring to fig. 1, the λ/4 type TEM wave dielectric resonator W1 is introduced in the present invention, and the oscillation frequency thereof can be expressed as:
as can be seen from the formula (7),
d1 is the capacitance value of the varactor under a specific control voltage CV _ CP, and the characteristics of the varactor are different capacitance values corresponding to different excitation voltages; c is the equivalent capacitance of the resonator W1, C2 is the capacitance of the second capacitor, C3 is the capacitance of the third capacitor, C4 is the capacitance of the fourth capacitor, C5 is the capacitance of the fifth capacitor, C6 is the capacitance of the sixth capacitor, and the unit of the capacitance is F; l is the equivalent inductance value of the resonator W1 in H.
Therefore, when the λ/4 type TEM wave dielectric resonator W1 is introduced, the nominal frequency of the λ/4 type TEM wave dielectric resonator W1 should be selected to be higher than the design frequency of the voltage-controlled oscillator because, according to the mathematical basic principle: the two scores are compared, the numerator is the same, and the score with the larger denominator is smaller. Similarly, formula 8 can be obtained from formula 7.
Referring to fig. 1, the specific implementation and circuit design parameters are described with reference to fig. 1: c1=100pf, C2=7pf, C3=3pf, C4=8pf, C5=10pf, C6=5.6pf, C7=18pf, C8=1.5pf, R1=3.3k Ω, R2=8.2k Ω, R3=120r, r259=120 Ω, L1=330nh, L4=330nh, L5=330nh, L6=330nh, q1 is: BFR360 crystal triode, D1 are 1SV305 varactor, and L2 adopts the lambda/4 type medium resonant cavity of brilliant science and technology company manufacturing simultaneously, and the model is: DR30-1200T.
The circuit in fig. 1 can be used to debug a voltage-controlled oscillator that is satisfactory for practical use by using the above device parameters. Providing VCC as dc +5V, with CV _ CP controlling the voltage regulation range: 0.5V to 4.5V. The oscillation frequency of the voltage-controlled oscillator is as follows: 700MHz to 850MHz.
Of course, with the adjustment of the parameters of the components in fig. 1 and the use of different types of dielectric resonators, the voltage-controlled oscillator circuit can obtain the oscillation frequency range required by itself.
Therefore, the lambda/4 type TEM wave dielectric resonator in the voltage-controlled oscillator provided by the invention is introduced to replace a high-precision winding inductor, so that compared with the traditional LC three-terminal voltage-controlled oscillator, the phase noise of the main performance index is not deteriorated when the oscillation frequency is 700MHz or higher, and meanwhile, the requirement on production consistency can be met, which cannot be met by the LC three-terminal voltage-controlled oscillator.
It should be noted that the above summary and the detailed description are intended to demonstrate the practical application of the technical solutions provided by the present invention, and should not be construed as limiting the scope of the present invention. Various modifications, equivalent substitutions, or improvements may be made by those skilled in the art within the spirit and principles of the invention. The scope of the invention is to be determined by the appended claims.
Claims (2)
1. The voltage-controlled oscillator is characterized by comprising a voltage-controlled voltage source input end (CV _ CP), a first capacitor (C1), a first inductor (L1), a variable capacitance diode (D1), a second capacitor (C2), a third capacitor (C3), a lambda/4 wave type TEM wave dielectric resonator (W1), a fourth capacitor (C4), a fifth capacitor (C5), a sixth capacitor (C6), a seventh capacitor (C7), a triode (Q1), a second inductor (L4), a first resistor (R1), a second resistor (R2), a third inductor (L5), a third resistor (R3), an eighth capacitor (C8), a fourth resistor (R259), a fourth inductor (L6) and a voltage-controlled voltage source output end (VCO _ OUT); wherein, the first and the second end of the pipe are connected with each other,
the input end (CV _ CP) of the voltage-controlled voltage source is respectively and electrically connected with a pin 1 of the first capacitor (C1) and a pin 1 of the first inductor (L1), and a pin 2 of the first capacitor (C1) is grounded;
a pin 2 of the first inductor (L1) is respectively and electrically connected with a pin 2 of the variable capacitance diode (D1) and a pin 1 of the second capacitor (C2), and a pin 1 of the variable capacitance diode (D1) is grounded;
the pin 2 of the second capacitor (C2) is respectively and electrically connected with the pin 1 of the third capacitor (C3), the pin 1 of the lambda/4 wavelength type TEM wave medium resonator (W1) and the pin 1 of the fourth capacitor (C4), the pin 2 of the third capacitor (C3) is grounded, and the pin 2 of the lambda/4 wavelength type TEM wave medium resonator (W1) is grounded;
a pin 2 of a fourth capacitor (C4) is respectively and electrically connected with a pin 1 of a fifth capacitor (C5), a pin 2 of a second inductor (L4) and a pin B of a triode (Q1), a pin 2 of a fifth capacitor (C5) is respectively and electrically connected with a pin 1 of a sixth capacitor (C6) and a pin 1 of a seventh capacitor (C7), a pin 2 of the sixth capacitor (C6) is grounded, a pin 2 of the seventh capacitor (C7) is respectively and electrically connected with a pin E of the triode (Q1) and a pin 1 of a fourth resistor (R259), a pin 2 of the fourth resistor (R259) is electrically connected with a pin 1 of the fourth inductor (L6), and a pin 2 of the fourth inductor (L6) is grounded;
a pin 1 of a second inductor (L4) is respectively and electrically connected with a pin 2 of a first resistor (R1) and a pin 1 of a second resistor (R2), a pin 2 of the second resistor (R2) is grounded, a pin 1 of the first resistor (R1) is respectively and electrically connected with a power supply (VCC), a pin 1 of a third inductor (L5) and a pin 1 of a third resistor (R3), a pin 2 of the third inductor (L5) is respectively and electrically connected with a pin C of a triode (Q1), a pin 2 of the third resistor (R3) and a pin 1 of an eighth capacitor (C8), and a pin 2 of the eighth capacitor (C8) is electrically connected with a voltage-controlled voltage source output end (VCO _ OUT);
the network parameters R, L, C of the lambda/4-wavelength type TEM wave dielectric resonator (W1) are respectively expressed as:
wherein the content of the first and second substances,
f is the nominal frequency in MHz; s is the length of the side of the cross section of the lambda/4 wavelength type TEM wave medium resonator, and the unit is mm; d is the inner hole diameter of the lambda/4 wavelength type TEM wave medium resonator, and the unit is mm; er is the dielectric constant of the resonator material and is determined by the cavity material of the lambda/4 wavelength type TEM wave dielectric resonator; r is equivalent resistance with the unit of omega; l is equivalent inductance and has the unit of H; c is equivalent capacitance with the unit of F; z 0 Is the characteristic impedance, in Ω; q is a quality factor;
the nominal frequency f of the lambda/4 long TEM wave dielectric resonator (W1) is as follows:
wherein f is in MHz; l is the length of the resonator in mm; er is the dielectric constant of the resonator material and is determined by the cavity material of the lambda/4 wavelength type TEM wave dielectric resonator.
2. A voltage controlled oscillator as claimed in claim 1, characterized in that the λ/4 wavelength TEM wave dielectric resonator (W1) is equivalent to an RLC resonant network connected in parallel by an inductance (L), a resistance (R) and a capacitance (C).
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| US4500854A (en) * | 1981-04-20 | 1985-02-19 | John Fluke Mfg. Co., Inc. | Voltage-controlled RF oscillator employing wideband tunable LC resonator |
| CN1192593A (en) * | 1996-11-08 | 1998-09-09 | Kmw株式会社 | Dual-resonator microwave filter |
| WO2006050705A1 (en) * | 2004-11-10 | 2006-05-18 | Fachhochschule Aachen | Resonator system and method for increasing the load quality of a resonant circuit |
| CN102760923A (en) * | 2012-08-02 | 2012-10-31 | 深圳市国人射频通信有限公司 | Medium filter |
| CN204119182U (en) * | 2014-10-09 | 2015-01-21 | 南京赛格微电子科技股份有限公司 | A kind of high-frequency dielectric discrete band stop filter |
| CN109039286A (en) * | 2018-06-28 | 2018-12-18 | 电子科技大学中山学院 | Novel light-operated microwave oscillator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4500854A (en) * | 1981-04-20 | 1985-02-19 | John Fluke Mfg. Co., Inc. | Voltage-controlled RF oscillator employing wideband tunable LC resonator |
| CN1192593A (en) * | 1996-11-08 | 1998-09-09 | Kmw株式会社 | Dual-resonator microwave filter |
| WO2006050705A1 (en) * | 2004-11-10 | 2006-05-18 | Fachhochschule Aachen | Resonator system and method for increasing the load quality of a resonant circuit |
| CN102760923A (en) * | 2012-08-02 | 2012-10-31 | 深圳市国人射频通信有限公司 | Medium filter |
| CN204119182U (en) * | 2014-10-09 | 2015-01-21 | 南京赛格微电子科技股份有限公司 | A kind of high-frequency dielectric discrete band stop filter |
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