CN115051650B - S-band frequency-doubling low-phase-noise voltage-controlled oscillator and signal generating device - Google Patents
S-band frequency-doubling low-phase-noise voltage-controlled oscillator and signal generating device Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
- H03B5/368—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
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- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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Abstract
The invention discloses a voltage-controlled oscillator with S-band multiple frequency band and low phase noise and a signal generating device, belonging to the technical field of circuit design.A coupling resonant cavity network comprises a first coupling resonator and a second coupling resonator, wherein the first coupling resonator and the second coupling resonator generate different resonant frequency signals under the control of tuning voltage; the emitters of the transistors are respectively connected to the output ends of the first coupling resonator and the second coupling resonator and used for amplifying resonant frequency signals; and the broadband negative resistance network is connected with the base electrode of the transistor and is used for generating uniform or constant negative resistance on the tuning frequency band. The negative resistance network is coupled with the base level of the transistor, and provides a negative resistance value which is uniformly changed in the whole passband, thereby ensuring that the VCO can maintain stable oscillation in the whole S waveband and simultaneously keep good noise performance.
Description
Technical Field
The invention relates to the technical field of circuit design, in particular to a voltage-controlled oscillator with an S-band frequency multiplication band and low phase noise and a signal generating device.
Background
A Voltage Controlled Oscillator (VCO) refers to an oscillating circuit having an output frequency corresponding to an input control voltage, the magnitude of an output signal depends on the design of the voltage controlled oscillator circuit, and an operating frequency is determined by a resonator providing an input signal; clock generation and clock recovery circuits typically generate a clock using a VCO within a Phase Locked Loop (PLL) as an external reference, and thus, the VCO is critical to the performance of the phase locked loop. Phase-locked loops are particularly important in wireless networks because they enable a communication device to quickly lock onto the carrier frequency over which communications are transmitted.
The dynamic operating range and noise performance of the vco may limit or affect the performance of the pll itself, and further affect the performance of the device with the pll, for example, the performance of devices such as rf transceiver, mobile phone, modem card, etc. may be affected by the performance of the vco. The wideband tunability of a VCO is one of the most fundamental performances to be considered in VCO design, depending on the technology and topology used. The dynamic time-averaged quality factor (Q factor, which is generally inversely proportional to the operating frequency range of the VCO) of the resonator and the noise of the tuning diode affect the noise performance of the voltage controlled oscillator.
Current developments in radio frequency technology place higher demands on VCO design: low phase noise, low power consumption and wide frequency tuning range despite the constant improvement of VCO technology, low phase noise is still a bottleneck in general, and the following drawbacks and disadvantages mainly exist in the prior art:
1. from the tuning bandwidth, the existing VCO based on the LC resonator does not have a tuning range covering the whole S-band, while the VCO based on the YIG resonator can achieve a wider tuning range, but has high cost and large volume, and has certain disadvantages for the requirement of current miniaturization;
2. from the phase noise, the VCO works near the S band nowadays, the phase noise level of the VCO with wider bandwidth is commonly around-80 dBc/Hz @10kHz, and the phase noise level is still to be improved.
In summary, there is a need for a voltage controlled oscillator with a frequency doubling and low phase noise.
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provides a voltage-controlled oscillator with low S-band frequency multiplication band and low phase noise and a signal generating device.
The purpose of the invention is realized by the following technical scheme: the voltage-controlled oscillator comprises a coupled resonant cavity network, a quartz crystal or transistor and a broadband negative resistance network.
The coupling resonant cavity network comprises a first coupling resonator and a second coupling resonator, and the first coupling resonator and the second coupling resonator generate signals with different resonant frequencies under the control of tuning voltage. Specifically, the tuning voltage is provided by a power module or device with adjustable output voltage, and the value of the tuning voltage is 0V-20V. The two coupled resonators are used for generating resonant frequencies, and can be LC oscillators, RC oscillators and the like, and different resonant frequencies can be generated under the excitation of different tuning voltages. Preferably, the same resonator is adopted by the first coupling resonator and the second coupling resonator, and the same resonance frequency is generated under the excitation of the same tuning voltage.
The emitters of the transistors are respectively connected to the output ends of the first coupling resonator and the second coupling resonator and used for amplifying resonant frequency signals, and the VCO working frequency is output by the collectors of the transistors. Specifically, the VCO adopts the parallel emitter transistors for amplification, two completely consistent tuning networks (coupling resonators) are coupled to the two emitters of the parallel emitter transistors, the two equal-amplitude and opposite-phase oscillation frequencies suppress odd-numbered modes and even-numbered modes are superposed, so that the output frequency can be adjusted within a range of twice of the fundamental frequency, and the range of the tuning frequency is enlarged.
The broadband negative resistance network is connected with the base electrode of the transistor and used for keeping constant resistance in the whole pass band of the resonant cavity, specifically, the negative resistance network generates uniform or constant negative resistance on the tuning band while changing the working frequency of the VCO by changing the oscillation frequency of the coupled resonant cavity network through tuning voltage, and therefore the VCO can keep stable oscillation in the whole S-band and keep good noise performance.
In one example, according to the oscillation principle of the negative resistance circuit (broadband negative resistance network), the oscillation starting condition of the circuit is as follows:
R IN +R L ＜0
wherein R is IN Representing the real part of the input impedance; r L Representing the real part of load impedance; the conditions for oscillation balance are:
R IN ＝-R L and X IN ＝-X L
Wherein, X IN Representing an imaginary input impedance; x L Representing the imaginary part of the load impedance. In practical applications, however, it is usually necessary to satisfy:
R L ＝-R IN /3
the problem that the negative resistance of the circuit meets the oscillation starting condition in a wider pass frequency band is a difficulty in current broadband VCO design. The impedance calculation formula of the 1.6G-4.1G frequency band of the invention is as follows:
Zin＝Vin/Iin
where Vin represents the input voltage; iin represents the input current; and performing alternating current equivalence on the triode circuit to obtain:
Zin＝[(1+β)X c X vr +h ie (X c +X vr )]/X c +h ie
wherein, beta is a parameter representing the current amplification capability of the triode; xc is the equivalent capacitive reactance of the negative resistance circuit; x vr Is the equivalent capacitive reactance of the varactor; h is ie The input resistor is used for reflecting the control capability of the base voltage to the base current when the output voltage Uce is unchanged. When X is present c ＜＜h ie Sometimes:
Zin≈(1+β)/h ie *X c X vr +(X c +X vr )＝-gm/ω2C*C vr +1/jω(C*C vr /(C+C vr ))
R IN ＝-gm/ω 2 C*C vr ,X IN ＝1/jω(C*C vr /(C+C vr ))
wherein gm represents the control capability, i.e. amplification, of the transistor input voltage on the output current; c is the equivalent capacitance of the negative resistance circuit; c vr Is the equivalent capacitance of the varactor. After the impedance meeting the frequency band of 1.6G-4.1G is obtained through calculation, the load impedance and the input impedance meet the starting condition, and then a negative resistance circuit meeting the impedance needed by the frequency band of 1.6G-4.1G is constructed on the basis of the capacitor and the inductor. Preferably, the broadband negative resistance network inductor L9 has one end of the inductor L9 connected to a ground capacitor C10 and the other end connected to a ground capacitor C11, the inductor L10 is connected between the inductor L9 and the ground capacitor C10, the other end of the inductor L10 is connected to a ground capacitor C12, and values of the inductor L9, the inductor L10, the inductor C11 and the inductor C12 are determined based on impedance required for meeting a frequency band of 1.6G to 4.1G.
In an example, the voltage-controlled oscillator further includes a filter network for performing filtering processing on the tuning voltage to filter spurious signals in the tuning voltage, so as to improve the anti-jamming capability of the VCO.
In one example, the filter network is an LC filter circuit. As a preferred option, the LC filter circuit includes a first LC filter sub-circuit and a second LC filter sub-circuit, and the tuning voltage is filtered by the first LC filter sub-circuit and the second LC filter sub-circuit and then correspondingly input to the first coupling resonator and the second coupling resonator. Specifically, the first LC filter sub-circuit includes an inductor L6 and an inductor L5 connected in sequence, a grounding capacitor C7 is connected between the inductor L6 and the inductor L5, and the grounding capacitor C6 is connected to the other end (the end far away from the inductor L6) of the inductor L5. The second LC filter sub-circuit comprises an inductor L8 and an inductor L7 which are sequentially connected, a grounding capacitor C9 is connected between the inductor L8 and the inductor L7, and the other end (the end far away from the inductor L8) of the inductor L7 is connected with the grounding capacitor C8.
In one example, the first coupling resonator and the second coupling resonator are both LC oscillators, and the resonant frequency f satisfies:
wherein L represents an inductance value of the oscillator; c represents the capacitance value of the oscillator.
In one example, the LC oscillator includes two varactors connected in parallel, a microstrip line is disposed between the two varactors, and an output end of the LC oscillator is led out between the microstrip line and one of the varactors. In this example, two varactors connected in parallel are used, which can improve the capacitance variation range of the varactors, thereby widening the tuning frequency range of the VCO and covering the entire S-band.
In one example, the specifications of the two varactors in the LC oscillator are the same, where the specifications refer to performance parameters of the varactors, including capacitance values of the diodes. In this example, the Q value after two identical varactors are connected in parallel is the same as the Q value of a single varactor, so that the phase noise is not deteriorated, and low-noise output is realized.
In one example, the microstrip line is an arc microstrip line. At this time, a model expression of an LC oscillator formed by two varactor diodes and microstrip lines connected in parallel is:
the F factor is now expressed as:
in the above two formulae, Δ ω represents an angular frequency change amount; t represents a temperature; r represents a loss resistance in the LC oscillator; v 0 Represents the output voltage; q represents the dynamic time-averaged quality factor of the resonator; omega 0 Representing an initial angular frequency; i is T Representing the tail current; g m,tail Representing the tail current source transistor transconductance; γ represents the transistor noise figure. In the resonant network, the Q value of the inductor is much lower than the Q values of the MIM capacitor and the varactor, so the Q value in the resonant network (coupled resonant cavity network) is mainly determined by the spiral inductor, and therefore to increase the Q value of the resonant network, an inductor with a high Q value is selected as much as possible.
In one example, the first coupling resonator and the second coupling resonator adopt varactors and microstrip lines with the same specification, and at the moment, the circuit from the tuning voltage to the two resonators to the emitter of the transistor is completely mirrored, so that the outputs of the two resonators are the same in the Vt change process, and the signal coupling efficiency is ensured.
In one example, the voltage-controlled oscillator further includes an output matching network connected to the collector of the transistor, so as to obtain a stable operating frequency at the output end of the output matching network.
In one example, the output matching network includes a first capacitor for matching the transistor output to a subsequent stage, and a capacitor and inductor impedance matched to the voltage controlled oscillator output. Preferably, the output matching network comprises a capacitor C3, a resistor R1, a capacitor C2 and a capacitor C1 which are connected in sequence, a grounding inductor L2 is arranged between the resistor R1 and the capacitor C2, and a grounding inductor L1 is arranged between the capacitor C2 and the capacitor C1. Wherein, C3 is used for matching the output end of the transistor with the later stage and is used for blocking the direct current. C1, C2, L1, L2 in order to consider the error in the actual engineering, match the impedance line of the carry-out terminal.
In one example, the voltage-controlled oscillator further comprises a direct current supply network connected with the broadband negative resistance network and the base of the transistor. Preferably, the voltage VCC of the direct current power supply network is sequentially connected with a resistor R2 and a resistor R3, and the other end of the resistor R3 is connected with the broadband negative resistance network; still be connected with ground capacitance C4 between resistance R2, the resistance R3, resistance R2, resistance R3 still are connected with inductance L3 simultaneously, and inductance L3's one end is connected to ground capacitance C4 one side, and the inductance L3 other end is connected with ground capacitance C5, is connected to the transistor collector between inductance L3 and the electric capacity C5.
The invention also includes a signal generating apparatus comprising a voltage controlled oscillator formed in accordance with any one or more of the examples above for generating a frequency specific signal.
Compared with the prior art, the invention has the beneficial effects that:
1. in one example, the coupled-resonator network of the present invention provides a desired oscillation frequency, and the negative-resistance network is coupled to the base of the transistor to provide a uniformly varying negative-resistance value throughout the passband, thereby ensuring that the VCO maintains stable oscillation throughout the S-band while maintaining good noise performance.
2. In one example, the noise rejection of the VCO is improved by filtering out spurious signals in the tuning voltage through a filter network.
3. In one example, two varactors connected in parallel are adopted, so that the capacitance value variation range of the varactors can be increased, the tuning frequency range of the VCO can be widened, and the whole S-band can be covered.
4. In one example, the Q value after two same varactors are connected in parallel is the same as that of a single varactor, so that the phase noise is not deteriorated, and low-noise output is realized.
5. In one example, the equivalent inductor obtained based on the arc microstrip line resonates, and the Q value of the inductor is effectively improved.
6. In one example, the same-specification resonators are adopted, the same resonant frequency can be output to the emitter of the transistor when the tuning voltage changes, and the signal coupling efficiency is guaranteed.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention.
FIG. 1 is a block diagram of a system in one example of the invention;
FIG. 2 is a schematic circuit diagram of a coupled resonator network and a filter network in accordance with an example of the present invention;
FIG. 3 is a schematic circuit diagram of a broadband negative resistance network and a DC supply network in an example of the present invention;
FIG. 4 is a circuit schematic of an output matching network in one example of the invention;
FIG. 5 is a noise test chart in an example of the present invention;
fig. 6 is a noise test chart in another example of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that directions or positional relationships indicated by "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like are directions or positional relationships described based on the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, ordinal words (e.g., "first and second," "first through fourth," etc.) are used to distinguish between objects, and are not limited to the order, but rather are to be construed to indicate or imply relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An S-band octave band low phase noise voltage controlled oscillator, preferably as shown in fig. 1, includes a coupled resonator network, an NPN transistor, a wide-band negative resistance network, a filter network, an output matching network, and a dc supply network.
As shown in fig. 2, the coupled resonator network includes a first coupled resonator and a second coupled resonator with the same circuit structure. The first coupling resonator comprises a first variable capacitance diode VR1 and a second variable capacitance diode VR2 which are connected in parallel, a first arc microstrip line is arranged between the cathode of the first variable capacitance diode VR1 and the cathode of the second variable capacitance diode VR2, and the space between the first arc microstrip line and the cathode of the second variable capacitance diode VR2 is connected to the emitter of the transistor; the second coupling resonator comprises a third variable capacitance diode VR3 and a fourth variable capacitance diode VR4 which are connected in parallel, a second arc-shaped microstrip line is arranged between the cathode of the third variable capacitance diode VR3 and the cathode of the fourth variable capacitance diode VR4, and the second arc-shaped microstrip line and the cathode of the fourth variable capacitance diode VR4 are connected to the emitter electrode of the transistor.
Further, as shown in fig. 2, the filter network is an LC filter circuit, and includes a first LC filter sub-circuit and a second LC filter sub-circuit. The first LC filter sub-circuit comprises an inductor L6 and an inductor L5 which are sequentially connected, a grounding capacitor C7 is connected between the inductor L6 and the inductor L5, and the other end (the end far away from the inductor L6) of the inductor L5 is connected with the grounding capacitor C6; the second LC filter sub-circuit comprises an inductor L8 and an inductor L7 which are sequentially connected, a grounding capacitor C9 is connected between the inductor L8 and the inductor L7, and the other end (the end far away from the inductor L8) of the inductor L7 is connected with the grounding capacitor C8. The tuning voltage Vt is respectively filtered by the first LC filtering sub-circuit and the second LC filtering sub-circuit and then loaded to the four variable capacitance diodes, and the specification parameters of the four variable capacitance diodes are the same.
Further, as shown in fig. 3, one end of the inductor L9 is connected to a grounded capacitor C10, the other end of the inductor L9 is connected to a grounded capacitor C11, an inductor L10 is connected between the inductor L9 and the grounded capacitor C10, the other end of the inductor L10 is connected to a grounded capacitor C12, and a gap between the capacitor L9 and the grounded capacitor C11 is connected to a base of the transistor.
Further, as shown in fig. 3, the voltage VCC of the dc supply network is sequentially connected to a resistor R2 and a resistor R3, and the other end of the resistor R3 is connected to a ground capacitor C10; still be connected with ground capacitance C4 between resistance R2, the resistance R3, resistance R2, resistance R3 still are connected with inductance L3 simultaneously, and inductance L3's one end is connected to ground capacitance C4 one side, and the inductance L3 other end is connected with ground capacitance C5, is connected to the collecting electrode of transistor between inductance L3 and the electric capacity C5.
Further, as shown in fig. 4, the output matching network includes a capacitor C3, a resistor R1, a capacitor C2, and a capacitor C1, which are connected in sequence, the other end of the capacitor C3 is connected to the collector of the transistor, a grounding inductor L2 is provided between the resistor R1 and the capacitor C2, a grounding inductor L1 is provided between the capacitor C2 and the capacitor C1, and the operating frequency of the VCO is output from the end of the capacitor C1. Wherein, C3 is used for matching the output end of the transistor with the later stage and is used for blocking the direct current. C1, C2, L1, L2 match the output 50 Ω impedance line in order to take into account errors in actual engineering.
In the example, the resonant frequency of the resonator is changed by changing the tuning voltage Vt to change the capacitance value of the varactor diode, so that the working frequency of the VCO is changed, and meanwhile, the negative resistance network generates uniform or constant negative resistance on a tuning frequency band, and by matching the horseshoe-shaped resonant cavity structure, a voltage-controlled oscillator which covers the whole S band by 1.6G-4.1G and has phase noise reaching-90 dBc/Hz @10kHz is designed.
The VCO was prepared using rogers5880 printed board, which was 0.8mm thick. According to the principle and the layout, the designed actual circuit test result is as follows:
when the Vt voltage is 0V, outputting the frequency of 1.599GHz, wherein the harmonic suppression is less than 15, and the output power is 4.1dBm; when the Vt voltage is 18V, the output frequency is 4.195GHz, the harmonic suppression is less than 40, and the output power is 2.1dBm. In the voltage increasing process, the frequency is gradually increased, the harmonic suppression is gradually increased, and the output power is gradually reduced. As can be seen from the noise test chart of FIG. 5, the phase noise of the voltage-controlled oscillator at 10KHz offset can reach-92.67 dBc/Hz, the phase noise at 100KHz offset can reach-109.50 dBc/Hz, and the phase noise at 1MHz offset can reach-128.91 dBc/Hz.
In another example, the same circuit principles as in the previous example are employed, according to
Calculating the value of a variable capacitance diode in a resonant cavity under the required output frequency, namely an inductor of an oscillator; according to R L ＝-R IN /3， X IN ＝-X L And calculating values of capacitance and inductance in the negative resistance network so as to realize the voltage-controlled oscillator output in other frequency bands. Such as a 3GHz-6GHz voltage controlled oscillator. When the Vt voltage is 0V, outputting the frequency of 2.760GHz, wherein the harmonic suppression is less than 15, and the output power is 3.44dBm; when the Vt voltage is 18V, the output frequency is 6.300GHz, the harmonic suppression is less than 20, and the output power is-0.9 dBm. In the voltage increasing process, the frequency is gradually increased, the harmonic suppression is gradually increased, and the output power is gradually reduced. As can be seen from fig. 6 based on the noise test chart, the phase noise of the voltage-controlled oscillator at the 10KHz offset is calculated according to a phase noise calculation formula, which specifically includes:
L(Δω)＝(Pn)dBm-(Psig)dBm-10lg(Δf)
wherein L (Δ ω) represents the phase noise of the output frequency; pn represents the effective power of the signal; psig represents the effective power of the spectrometer noise floor, and as can be seen from fig. 6, the value of (Pn) dBm- (Psig) dBm in this example is 54.47dB; Δ f denotes the resolution bandwidth, RES BW, which is 1KHz in this example. Based on the phase noise calculation formula, it can be concluded that the phase noise of the voltage controlled oscillator at 10KHz offset in this example is calculated to be-84.47 dBc/Hz.
The above detailed description is for the purpose of describing the invention in detail, and it should not be construed that the detailed description is limited to the description, and it will be apparent to those skilled in the art that various modifications and substitutions can be made without departing from the spirit of the invention.
Claims (7)
1. A kind of S wave band frequency multiplication low phase noise voltage controlled oscillator, characterized by that: the voltage controlled oscillator includes:
the coupling resonant cavity network comprises a first coupling resonator and a second coupling resonator, and the first coupling resonator and the second coupling resonator generate different resonant frequency signals under the control of tuning voltage; the tuning voltage is 0V-20V; the first coupling resonator and the second coupling resonator adopt the same resonator and generate the same resonant frequency under the excitation of the same tuning voltage;
the emitters of the transistors are respectively connected to the output ends of the first coupling resonator and the second coupling resonator and used for amplifying resonant frequency signals; the transistor is a triode;
the broadband negative resistance network is connected with the base electrode of the transistor and is used for generating uniform or constant negative resistance on a tuning frequency band; the impedance calculation formula of the 1.6G-4.1G frequency band is as follows:
Zin≈(1+β)/h ie *X c X vr +(X c +X vr )＝-gm/ω2C*C vr +1/jω(C*C vr /(C+C vr ))
R IN ＝-gm/ω 2 C*C vr ,X IN ＝1/jω(C*C vr /(C+C vr ))
wherein, beta is a parameter representing the current amplification capability of the triode; h is ie The input resistor is used for reflecting the control capability of the base voltage to the base current when the output voltage Uce is unchanged; xc is the equivalent capacitive reactance of the broadband negative resistance network; x vr Is the equivalent capacitive reactance of the varactor; gm represents the control capability, i.e. amplification, of the transistor input voltage on the output current; c is the equivalent capacitance of the broadband negative resistance network; c vr Is the equivalent capacitance of the varactor; r IN Representing the real part of the input impedance; x IN Representing an imaginary input impedance;
enabling the load impedance and the input impedance to meet the starting vibration condition, and further constructing a broadband negative resistance network which meets the impedance required by the 1.6G-4.1G frequency band on the basis of the capacitor and the inductor;
the direct current power supply network is connected with the broadband negative resistance network and the base electrode of the transistor;
the first coupling resonator and the second coupling resonator are both LC oscillators;
the LC oscillator comprises two variable capacitance diodes connected in parallel, and a microstrip line is arranged between the two variable capacitance diodes; the variable capacitance diodes connected in parallel are used for improving the capacitance value change range of the variable capacitance diodes, and equivalent inductance is obtained through the microstrip lines;
the specifications of the two varactors in the LC oscillator are the same.
2. The S-band multiple band low phase noise voltage controlled oscillator of claim 1, wherein: the voltage-controlled oscillator further comprises a filter network for filtering the tuning voltage.
3. The S-band multiple band low phase noise voltage controlled oscillator of claim 2, wherein: the filter network is an LC filter circuit.
4. The S-band multiple band low phase noise voltage controlled oscillator of claim 1, wherein: the microstrip line is an arc microstrip line.
5. The S-band multiple band low phase noise voltage controlled oscillator of claim 1, wherein: the first coupling resonator and the second coupling resonator adopt variable capacitance diodes and microstrip lines with the same specification.
6. The S-band multiple band low phase noise voltage controlled oscillator of claim 1, wherein: the voltage controlled oscillator further comprises an output matching network connected with the collector of the transistor.
7. A signal generating device, characterized by: the apparatus comprising the voltage controlled oscillator of any of claims 1-6.
Priority Applications (1)
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