CN109935667A - A kind of semiconductor light-emitting elements - Google Patents
A kind of semiconductor light-emitting elements Download PDFInfo
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Abstract
The present invention discloses a kind of semiconductor light-emitting elements, successively includes substrate, N-shaped nitride-based semiconductor, multiple quantum wells, V-pits, CuInP/Ag2S core-shell quanta dots, AgInS2/CuInS2Core-shell quanta dots and p-type nitride-based semiconductor, it is characterised in that the CuInP/Ag2S core-shell quanta dots issue feux rouges；The AgInS2/ CuInS2 core-shell quanta dots issue green light, and the multiple quantum wells issues blue light, to form the semiconductor light-emitting elements for issuing feux rouges, blue light and green light in same epitaxial wafer.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, especially a kind of semiconductor light-emitting elements.
Background technique
Semiconductor light-emitting elements have the extensive wave-length coverage of adjustable extent, and luminous efficiency is high, energy conservation and environmental protection, can be used super
The factors such as long-life, the size for spending 100,000 hours are small, designability is strong, have gradually replaced incandescent lamp and fluorescent lamp, and growth is common
The light source of domestic lighting, and new scene is widely applied, such as indoor sharpness screen, outdoor aobvious screen, mobile TV backlight
The application fields such as illumination, street lamp, car light, flashlight.But the quality of material grown of high In ingredient nitride is poor, causes to shine
Low efficiency, it is difficult to form feux rouges nitride light-emitting element.Usual white light emitting element uses nitride-based semiconductor blue light diode
Laser fluorescence powder obtains white light.The white light of general RGB RGB uses the blue light of GaAs red light chips combination nitride-based semiconductor
The white light of RGB, but the higher cost of this method, the matching not easy to control of the brightness uniformity of RGB etc. are formed with green light chip.
In view of the above difficulty with it is insufficient, it is necessary to propose it is a kind of extension on piece is directly formed RGB light mix it is white
Micro/ nanometers of Nano-LED of light light-emitting component or micron.
Summary of the invention
The present invention discloses a kind of semiconductor light-emitting elements, successively includes substrate, N-shaped nitride-based semiconductor, multiple quantum wells, V-
Pits, CuInP/Ag2S core-shell quanta dots, AgInS2/CuInS2Core-shell quanta dots and p-type nitride-based semiconductor, feature exist
In the CuInP/Ag2S core-shell quanta dots issue feux rouges；The AgInS2/CuInS2Core-shell quanta dots issue green light, described more
Quantum Well issues blue light, to form the semiconductor light-emitting elements for issuing feux rouges, blue light and green light in same epitaxial wafer.
Further, the V-pits is made of the first V-pits and the 2nd V-pits, the CuInP/Ag2S nucleocapsid amount
Son point and AgInS2/CuInS2Core-shell quanta dots are located inside V-pits；There is CuInP/Ag in first V-pits2S nucleocapsid
Quantum dot issues feux rouges；There is AgInS in 2nd V-pits2/CuInS2Core-shell quanta dots issue green light；First V-
Multiple quantum wells between pits and the 2nd V-pits issues blue light, to form feux rouges, green light and blue light in same epitaxial wafer
The light-emitting component of three primary colours.
Further, the CuInP/Ag2S core-shell quanta dots can also adulterate Er, Eu element and carry out wavelength tuning control, pass through control
The doping concentration of Er and Eu element processed controls CuInP/Ag2The emission wavelength of S core-shell quanta dots；Er the or Eu doped chemical exists
CuInP/Ag2The doping concentration of S core-shell quanta dots is 1.0 E6cm-3~1.0 E21 cm-3.The CuInP/Ag2S nucleocapsid quantum
Point includes following doping combining form CuInP:Er/Ag2S core-shell quanta dots, CuInP/Ag2S:Er core-shell quanta dots, CuInP:
Eu/Ag2S core-shell quanta dots, CuInP/Ag2S:Eu core-shell quanta dots, CuInP:Er/Ag2S:Er core-shell quanta dots, CuInP:Er/
Ag2S:Eu core-shell quanta dots, CuInP:Eu/Ag2S:Eu core-shell quanta dots, CuInP:Eu/Ag2S:Er core-shell quanta dots.
Further, the AgInS2/CuInS2Core-shell quanta dots can also adulterate Er, Eu element and carry out wavelength tuning control, pass through
The doping concentration for controlling Er and Eu element controls AgInS2/CuInS2The emission wavelength of core-shell quanta dots；The Er or Eu doping member
Element is in AgInS2/CuInS2The doping concentration of core-shell quanta dots is 1.0 E6cm-3~1.0 E21cm-3.The AgInS2/CuInS2
Core-shell quanta dots include following doping combining form: AgInS2:Er/CuInS2Core-shell quanta dots, AgInS2/CuInS2: Er nucleocapsid
Quantum dot, AgInS2:Eu/CuInS2Core-shell quanta dots, AgInS2/CuInS2: Eu core-shell quanta dots, AgInS2:Er/CuInS2:
Er core-shell quanta dots, AgInS2:Er/CuInS2: Eu core-shell quanta dots, AgInS2:Eu /CuInS2: Eu core-shell quanta dots,
AgInS2:Eu /CuInS2: Er core-shell quanta dots.
Further, there is CuInP/Ag in the first V-pits2S core-shell quanta dots, CuInP are stratum nucleare, and diameter is
T1, Ag2S is shell, and with a thickness of t2, shell envelopes stratum nucleare, and the nm of 5 nm≤t1, t2≤100 regulates and controls the thickness of t1 and t2
Degree and its controllable quantum dot light emitting wavelength of ratio are 600 ~ 750 nm.
Further, the AgInS2/CuInS2Core-shell quanta dots, AgInS2For stratum nucleare, diameter t3, CuInS2For shell
Layer, with a thickness of t4, the nm of 5 nm≤t3, t4≤100 regulates and controls the thickness and its controllable quantum dot light emitting of ratio of t3 and t4
Wavelength is 500 ~ 600 nm.
Further, the opening size of the first V-pits and the 2nd V-pits is 50 ~ 500 nm, the CuInP/
Ag2S core-shell quanta dots and AgInS2/CuInS2About 30 ~ 300 nm of the diameter of core-shell quanta dots.
Further, the multiple quantum wells is InxGa1-xN/GaN Quantum Well, In component 0.15 < x < 0.35, the volume
Sub- trap issues blue light, and wavelength is 400 ~ 500 nm.
Further, the CuInP/Ag2S core-shell quanta dots further include Ag2S/CuInP quantum dot, stratum nucleare Ag2S, shell
Layer is CuInP；The AgInS2/CuInS2Core-shell quanta dots further include CuInS2/AgInS2, stratum nucleare CuInS2, shell is
AgInS2。
Further, the CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots can also be grown on nothing
(it is not located inside V-pits) above the multiple quantum wells in the region V-pits, CuInP/Ag2S core-shell quanta dots, AgInS2/
CuInS2Core-shell quanta dots and multiple quantum wells issue red, green, blue respectively, to form RGB mixing in same epitaxial wafer
White light emitting element.
Further, the CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots further include periodicity
Core-shell structure, (CuInP/Ag2S)m, (AgInS2/CuInS2)n, period m >=1, n >=1.
Further, the CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots can be grown on V-
The region pits, can also be grown on above the multiple quantum wells in no region V-pits and (not be located inside V-pits), CuInP/Ag2S
Core-shell quanta dots, AgInS2/CuInS2Core-shell quanta dots and multiple quantum wells issue red, green, blue respectively, thus in same extension
The light-emitting component of RGB is formed in piece.Then, peeling liner bottom makes micron order or nanoscale isolation channel by lithography, and is bonded
Enter control circuit board, micron or nano luminescent element (Micro/Nano-LED) on independent control epitaxial wafer are fabricated to micron
Or nanometer LED(Micro/Nano-LED).Without carrying out, the chip of tradition Micro/Nano-LED picks up the technology and flood tide turns
Move, promote the yield of Micro/Nano-LED and reduce cost, and can by LED from the size of Mini-LED/ Micro-LED into
One step is promoted to the Nano grade resolution ratio of Nano-LED.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of semiconductor light-emitting elements of the tradition with V-pits.
Fig. 2 is a kind of structural schematic diagram of semiconductor light-emitting elements of the present invention.
Fig. 3 is a kind of semiconductor light-emitting elements CuInP/Ag of the present invention2S core-shell quanta dots and AgInS2/CuInS2Nucleocapsid amount
Son point, which is grown in the V-pits of multiple quantum wells, generates feux rouges, green light and blue light into the effect diagram of white light.
Fig. 4 is a kind of semiconductor light-emitting elements CuInP/Ag of the present invention2S core-shell quanta dots and AgInS2/CuInS2Nucleocapsid amount
Son point is grown on the effect signal that feux rouges, green light and blue light are generated above the multiple quantum wells in no region V-pits into white light
Figure.
Fig. 5 is a kind of semiconductor light-emitting elements CuInP/Ag of the present invention2S core-shell quanta dots, AgInS2/CuInS2Nucleocapsid amount
Feux rouges, green light and blue light are generated above sub- point, multiple quantum wells, are fabricated to micron or nanometer LED (Micro/Nano-LED) effect
Schematic diagram.
Fig. 6 is a kind of semiconductor light-emitting elements CuInP/Ag of the present invention2S core-shell quanta dots and AgInS2/CuInS2Nucleocapsid amount
Son point is grown on above the multiple quantum wells in no region V-pits, is fabricated to micron or nanometer LED (Micro/Nano-LED) effect
Schematic diagram.
It illustrates: 100: substrate；101:n type nitride-based semiconductor, 102: dislocation line, 103: multiple quantum wells, 104:V-
Pits, 104a: the first V-pits, the 104b: the two V-pits, 105:CuInP stratum nucleare, 106:Ag2S shell, 107:AgInS2Core
Layer, 108:CuInS2 shell, 109:p type nitride-based semiconductor, 110: micron order or nanoscale isolation channel, 111: control electricity
Road plate, 105/106:CuInP/Ag2S core-shell quanta dots, 107/108:AgInS2/CuInS2Core-shell quanta dots.
Specific embodiment
Embodiment 1
Nitride light-emitting element of traditional multiple quantum wells 103 with V-pits 104 is as shown in Figure 1, include substrate 100, N-shaped nitrogen
Compound semiconductor 101, dislocation line 102, multiple quantum wells 103, V-pits 104, p-type nitride-based semiconductor 109, wherein dislocation line
Across V-pits and multiquantum well region.The present invention discloses a kind of semiconductor light-emitting elements, successively includes substrate 100, N-shaped nitride
Semiconductor 101, multiple quantum wells 103, V-pits 104, CuInP 105/Ag2106 core-shell quanta dots of S, AgInS2 107/
CuInS2108 core-shell quanta dots and p-type nitride-based semiconductor, it is characterised in that the CuInP 105/Ag2106 nucleocapsid amount of S
Son point issues feux rouges；The AgInS2 107/CuInS2108 core-shell quanta dots issue green light, and the multiple quantum wells 103 issues indigo plant
Light, to form the light-emitting component of feux rouges, green light and blue light three primary colours in same epitaxial wafer.
The V-pits 104 is made of the first V-pits 104a and the 2nd V-pits 104b, the CuInP 105/
106 core-shell quanta dots of Ag2S and AgInS2 107/CuInS2108 core-shell quanta dots are located inside V-pits；First V-
There is CuInP 105/Ag in pits 104a2106 core-shell quanta dots of S issue feux rouges；Have in the 2nd V-pits 104b
AgInS2 107/CuInS2108 core-shell quanta dots issue green light；The first V-pits 104a and the 2nd V-pits 104b it
Between multiple quantum wells 103 issue blue light；To form the white light emitting element of feux rouges, green light and blue light, as shown in Figure 3.
The CuInP 105/Ag2106 core-shell quanta dots of S can also adulterate Er, Eu element and carry out wavelength tuning control, pass through control
The doping concentration of Er and Eu element processed controls CuInP 105/Ag2The emission wavelength of 106 core-shell quanta dots of S；The Er or Eu mix
Miscellaneous element is in CuInP 105/Ag2The doping concentration of 106 core-shell quanta dots of S is 1.0 E6cm-3~1.0 E21 cm-3.It is described
CuInP/Ag2S core-shell quanta dots include following doping combining form CuInP:Er/Ag2S core-shell quanta dots, CuInP/Ag2S:Er
Core-shell quanta dots, CuInP:Eu/Ag2S core-shell quanta dots, CuInP/Ag2S:Eu core-shell quanta dots, CuInP:Er/Ag2S:Er core
Shell quantum dot, CuInP:Er/Ag2S:Eu core-shell quanta dots, CuInP:Eu/Ag2S:Eu core-shell quanta dots, CuInP:Eu/Ag2S:
Er core-shell quanta dots.
The AgInS2 107/CuInS2108 core-shell quanta dots can also adulterate Er, Eu element and carry out wavelength tuning control, pass through
The doping concentration for controlling Er and Eu element controls AgInS2 107/CuInS2The emission wavelength of 108 core-shell quanta dots；The Er or
Eu doped chemical is in AgInS2 107/CuInS2The doping concentration of 108 core-shell quanta dots is 1.0 E6cm-3~1.0 E21cm-3。
The AgInS2 107/CuInS2108 core-shell quanta dots include following doping combining form: AgInS2:Er/CuInS2Nucleocapsid amount
It is sub-, AgInS2/CuInS2: Er core-shell quanta dots, AgInS2:Eu/CuInS2Core-shell quanta dots, AgInS2/CuInS2: Eu nucleocapsid
Quantum dot, AgInS2:Er/CuInS2: Er core-shell quanta dots, AgInS2:Er/CuInS2: Eu core-shell quanta dots, AgInS2:Eu /
CuInS2: Eu core-shell quanta dots, AgInS2:Eu /CuInS2: Er core-shell quanta dots.
There is CuInP 105/Ag in the first V-pits 104a2106 core-shell quanta dots of S, CuInP 105 are core
Layer, diameter t1, Ag2S 106 is shell, and with a thickness of t2, shell envelopes stratum nucleare, the nm of 5 nm≤t1, t2≤100,
The thickness and its controllable quantum dot light emitting wavelength of ratio for regulating and controlling t1 and t2 are 600 ~ 750 nm.
The AgInS2 107/CuInS2108 core-shell quanta dots, AgInS2 107 be stratum nucleare, diameter t3, CuInS2
108 be shell, and with a thickness of t4, the nm of 5 nm≤t3, t4≤100 regulates and controls the thickness and its controllable amount of ratio of t3 and t4
Son point emission wavelength is 500 ~ 600 nm.
The opening size of the first V-pits 104a and the 2nd V-pits 104b is 50 ~ 500 nm, the CuInP
105/Ag2106 core-shell quanta dots of S and AgInS2 107/CuInS2About 30 ~ 300 nm of the diameter of 108 core-shell quanta dots.
The multiple quantum wells 103 is InxGa1-xN/GaN Quantum Well, In component 0.15 < x < 0.35, the multiple quantum wells 103
Blue light is issued, wavelength is 400 ~ 500 nm.
The CuInP 105/Ag2106 core-shell quanta dots of S further include Ag2S/CuInP quantum dot, stratum nucleare Ag2S, shell
For CuInP；The AgInS2 108 core-shell quanta dots of 107/CuInS2 further include CuInS2/AgInS2, stratum nucleare CuInS2, shell
Layer is AgInS2。
Embodiment 2
Difference with embodiment 1 is, the CuInP 105/Ag2106 core-shell quanta dots of S and AgInS2 107/CuInS2
108 core-shell quanta dots can also be grown on above the multiple quantum wells in no region V-pits and (not be located inside V-pits), CuInP
105/Ag2106 core-shell quanta dots of S, AgInS2 107/CuInS2108 core-shell quanta dots and multiple quantum wells issue respectively it is red, green,
Blue light, to form the white light emitting element of RGB mixing in same epitaxial wafer, as shown in Figure 4.
Embodiment 3
It is compared with embodiment 1, the CuInP 105/Ag2106 core-shell quanta dots of S and AgInS2 107/CuInS2 108 nucleocapsids
Quantum dot further includes periodical core-shell structure, (CuInP 105/Ag2S 106)m, (AgInS2 107/CuInS2108)n, described
Period m >=1, n >=1, period are selected as m=2, and n=2 constitute CuInP/InPA/CuInP/Ag2The periodical core-shell quanta dots of S,
And CuInP/Ag2S/CuInP/Ag2The periodical core-shell quanta dots of S, as shown in Figure 5.
Embodiment 4
Difference with embodiment 1 is, the CuInP 105/Ag2106 core-shell quanta dots of S and AgInS2 107/CuInS2
108 core-shell quanta dots can be grown on 104 region V-pits, can also be grown on above the multiple quantum wells in no region V-pits (i.e. not
Inside V-pits), CuInP 105/Ag2106 core-shell quanta dots of S, AgInS2 107/CuInS2 108 core-shell quanta dots and
Multiple quantum wells issues red, green, blue respectively, to form the light-emitting component of RGB in same epitaxial wafer.Then, peeling liner
Bottom 100 makes micron order or nanoscale isolation channel 110 by lithography, and is bonded into control circuit board 111, independent control epitaxial wafer
On micron or nano luminescent element (Micro/Nano-LED), be fabricated to micron or nanometer LED(Micro/Nano-LED), such as
Shown in Fig. 6.Chip pickup and flood tide transfer of the technology without carrying out tradition Micro/Nano-LED, promote Micro/Nano-
The yield of LED simultaneously reduces cost, and LED further can be promoted to Nano-LED's from the size of Mini-LED/Micro-LED
Nano grade resolution ratio.
The above embodiments are only used to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art,
In the case where not departing from the spirit and scope of the present invention, various modifications and variation can be made to the present invention, therefore all equivalent
Technical solution also belong to scope of the invention, scope of patent protection of the invention should regard Claims scope restriction.
Claims (10)
- It successively include substrate, N-shaped nitride-based semiconductor, multiple quantum wells, V- 1. the present invention discloses a kind of semiconductor light-emitting elements Pits, CuInP/Ag2S core-shell quanta dots, AgInS2/CuInS2Core-shell quanta dots and p-type nitride-based semiconductor, feature exist In the CuInP/Ag2S core-shell quanta dots issue feux rouges；The AgInS2/CuInS2Core-shell quanta dots issue green light, described more Quantum Well issues blue light, to form the semiconductor light-emitting elements for issuing feux rouges, blue light and green light in same epitaxial wafer.
- 2. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the V-pits by the first V-pits and 2nd V-pits composition, the CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots are located in V-pits Portion；There is CuInP/Ag in first V-pits2S core-shell quanta dots issue feux rouges；Have in 2nd V-pits AgInS2/CuInS2Core-shell quanta dots issue green light；Multiple quantum wells between first V-pits and the 2nd V-pits issues blue Light, to form the light-emitting component of feux rouges, green light and blue light three primary colours in same epitaxial wafer.
- 3. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the CuInP/Ag2S core-shell quanta dots Er, Eu element can also be adulterated and carry out wavelength tuning control, the doping concentration by controlling Er and Eu element controls CuInP/Ag2S nucleocapsid The emission wavelength of quantum dot；Er the or Eu doped chemical is in CuInP/Ag2The doping concentration of S core-shell quanta dots is 1.0 E6cm-3~1.0 E21 cm-3；The CuInP/Ag2S core-shell quanta dots include following doping combining form CuInP:Er/Ag2S core-shell quanta dots, CuInP/ Ag2S:Er core-shell quanta dots, CuInP:Eu/Ag2S core-shell quanta dots, CuInP/Ag2S:Eu core-shell quanta dots, CuInP:Er/ Ag2S:Er core-shell quanta dots, CuInP:Er/Ag2S:Eu core-shell quanta dots, CuInP:Eu/Ag2S:Eu core-shell quanta dots, CuInP: Eu/Ag2S:Er core-shell quanta dots.
- 4. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the AgInS2/CuInS2Nucleocapsid quantum Point can also adulterate Er, Eu element and carry out wavelength tuning control, and the doping concentration by controlling Er and Eu element controls AgInS2/CuInS2 The emission wavelength of core-shell quanta dots；Er the or Eu doped chemical is in AgInS2/CuInS2The doping concentration of core-shell quanta dots is 1.0 E6cm-3~1.0 E21cm-3；The AgInS2/CuInS2Core-shell quanta dots include following doping combining form: AgInS2:Er/CuInS2Core-shell quanta dots, AgInS2/CuInS2: Er core-shell quanta dots, AgInS2:Eu/CuInS2Core-shell quanta dots, AgInS2/ CuInS2:Eu nucleocapsid quantum Point, AgInS2:Er/CuInS2: Er core-shell quanta dots, AgInS2:Er/CuInS2: Eu core-shell quanta dots, AgInS2:Eu / CuInS2: Eu core-shell quanta dots, AgInS2:Eu /CuInS2: Er core-shell quanta dots.
- 5. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: have in the first V-pits CuInP/Ag2S core-shell quanta dots, CuInP are stratum nucleare, diameter t1, Ag2S is shell, and with a thickness of t2, shell envelopes stratum nucleare, The nm of 5 nm≤t1, t2≤100, regulate and control t1 and t2 thickness and its controllable quantum dot light emitting wavelength of ratio be 600 ~ 750 nm。
- 6. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the AgInS2/CuInS2Nucleocapsid quantum Point, AgInS2For stratum nucleare, diameter t3, CuInS2For shell, with a thickness of t4, the nm of 5 nm≤t3, t4≤100 regulates and controls t3 The controllable quantum dot light emitting wavelength of thickness and its ratio with t4 is 500 ~ 600 nm.
- 7. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the first V-pits and the 2nd V- The opening size of pits is 50 ~ 500 nm, the CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots About 30 ~ 300 nm of diameter.
- 8. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the multiple quantum wells is InxGa1-xN/ GaN Quantum Well, In component 0.15 < x < 0.35, the multiple quantum wells issue blue light, and wavelength is 400 ~ 500 nm.
- 9. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the CuInP/Ag2S core-shell quanta dots It further include Ag2S/CuInP quantum dot, stratum nucleare Ag2S, shell CuInP；The AgInS2/CuInS2Core-shell quanta dots also wrap Include CuInS2/AgInS2, stratum nucleare CuInS2, shell AgInS2。
- 10. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: the CuInP/Ag2S core-shell quanta dots And AgInS2/CuInS2Core-shell quanta dots, which can be also grown on above the multiple quantum wells in no region V-pits, (not to be located in V-pits Portion), CuInP/Ag2S core-shell quanta dots, AgInS2/CuInS2Core-shell quanta dots and multiple quantum wells issue red, green, blue respectively, To form the white light emitting element of RGB mixing in same epitaxial wafer;The CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots further include periodical core-shell structure, (CuInP/Ag2S)m, (AgInS2/CuInS2)n, described Period m >=1, n >=1;The CuInP/Ag2S core-shell quanta dots and AgInS2/CuInS2Core-shell quanta dots can be grown on V-pits Region, can also be grown on above the multiple quantum wells in no region V-pits and (not be located inside V-pits), CuInP/Ag2S nucleocapsid Quantum dot, AgInS2/CuInS2Core-shell quanta dots and multiple quantum wells issue red, green, blue respectively, thus in same epitaxial wafer Form the light-emitting component of RGB；Then, peeling liner bottom makes micron order or nanoscale isolation channel by lithography, and is bonded into control circuit board, independent control Micron or nano luminescent element (Micro/Nano-LED) on epitaxial wafer, are fabricated to micron or nanometer LED(Micro/Nano- LED)；Chip pickup and flood tide transfer of the technology without carrying out tradition Micro/Nano-LED, promote Micro/Nano-LED's Yield simultaneously reduces cost, and LED can be further promoted to the nanometer of Nano-LED from the size of Mini-LED/Micro-LED Rank resolution ratio.
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