CN107785462A - A kind of nitride semiconductor LED and preparation method thereof - Google Patents
A kind of nitride semiconductor LED and preparation method thereof Download PDFInfo
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- CN107785462A CN107785462A CN201711009569.4A CN201711009569A CN107785462A CN 107785462 A CN107785462 A CN 107785462A CN 201711009569 A CN201711009569 A CN 201711009569A CN 107785462 A CN107785462 A CN 107785462A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 97
- 239000002096 quantum dot Substances 0.000 claims abstract description 56
- 230000003287 optical effect Effects 0.000 claims abstract description 35
- 230000010287 polarization Effects 0.000 claims abstract description 32
- 239000011258 core-shell material Substances 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 238000000605 extraction Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005090 crystal field Methods 0.000 claims abstract description 5
- 230000009977 dual effect Effects 0.000 claims abstract description 5
- 230000007704 transition Effects 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 241000209202 Bromus secalinus Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The present invention discloses a kind of nitride semiconductor LED and preparation method thereof, include substrate successively, N-type nitride-based semiconductor, MQW, V pits, p-type nitride-based semiconductor, the polarization optical control layer of V pits side walls, it is characterized in that the V pits side walls of Multiple-quantum have polarization optical control layer, the polarization optical control layer is by SiNx/MgNyOr MgNy/SiNxThe quantum dot of the multicycle superlattices core shell structure of formation is formed, and has dual polarised light modulation function：SiNx/MgNyOr MgNy/SiNxForm multiple polarised light transition interface, TM polarised lights are made to be converted to TE polarised lights in interface, simultaneously, the polarization optical control layer regulates and controls the top of valence band energy tape sort of SQW, the top of valence band tape sort of SQW from crystal field splitting energy CH bands is occupied the subband position of top of valence band first and is become heavy hole HH bands and occupy the subband position of top of valence band first, lift the outgoing ratio of TE polarised lights, reduce TM polarised light ratios, so as to the light extraction efficiency and external quantum efficiency of lifting deep ultraviolet semiconductor light-emitting-diode.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, particularly a kind of dark purple outer semiconductor with polarization optical control layer
Light emitting diode.
Background technology
At present, nitride semiconductor LED（LED）Due to higher luminous efficiency, cost relative fluorescence lamp be present
It is excellent to possess the heavy metal pollution speciality such as advantage, service life length, mercury-free, wavelength continuously adjustabe, the small, energy-conserving and environment-protective of chip size etc.
Point, in the general illumination field such as illumination of room lighting, outdoor scene, LED street lamp, mobile phone backlight, television backlight, flash lamp, dance
Desk lamp, traffic lights, automobile lamp etc., which have obtained, to be widely applied, and market penetration rate improves year by year, has gradually been substituted traditional white
Vehement lamp and fluorescent lamp.The deep ultraviolet iii-nitride light emitting devices LED of high Al contents is because p-type doping is difficult, defect concentration is high, interior amount
Sub- efficiency low problem, the outer quantum luminous efficiency such as low with light extraction efficiency is still relatively low very more compared with blue light-emitting diode.
An important factor for causing deep ultraviolet iii-nitride light emitting devices external quantum efficiency low is optical anisotropy.High Al contents
The quantum well radiation of nitride semiconductor LED influenceed by band structure, when Al components are relatively low, the energy of its valence band
Tape sort is GaN types, and top of valence band position is occupied by heavy hole HH bands and light hole LH bands, is lighted to be polarized along the TE of c-axis light extraction
Based on light.And when Al components exceed critical value about 0.5, the top of valence band energy tape sort of deep ultraviolet nitride semiconductor LED
AlN types are changed into from GaN types, top of valence band occupies the leading crystal field splitting energy band CH that becomes from heavy hole HH and light hole LH bands and occupied
Leading, the light for causing to send accounts for leading, the TE polarised lights decrease of front outgoing for the TM polarised lights of side emission.And with Al groups
Divide and rise, be i.e. the wavelength of deep ultraviolet LED shortens, and TM polarised lights rise, and TE polarised lights are gradually reduced, so as to cause deep ultraviolet nitrogen
The extremely low light extraction efficiency of compound semiconductor light-emitting-diode and external quantum efficiency, and the efficiency further shorten with wavelength and
There is more serious decline.Application No. CN201610263454 patent proposes a kind of by the use of n-AlGaN bases DBR as upper
Lower reflecting layer forms cavity resonator structure, reaches lifting TE polarised lights by the reflectivity and wavelength control of resonator, so as to carry
The method for rising external quantum efficiency, illustrate that by changing the method for reflection the effect of lifting TE polarised lights, but this method can be reached
The top of valence band energy tape sort of SQW can not be changed, therefore, it is impossible to solve the problems, such as optical anisotropy at all.Application No.
201410470409.X patent is by serving as the high aluminium component AlGaN layer of potential barrier in the SQW making of active layer and serving as gesture
The AlN/GaN superlattices of trap, emission wavelength is adjusted by the thickness for changing AlN/GaN in superlattices, improves the space of transmitting light
Distribution, lift TE polarised lights.The patent of Application No. 201610466965.9 uses the insertion AlInGaN in AlGaN well layer thin
Rotating fields come regulate and control heavy hole band, light hole band and crystalline field splitting hole band relative position, improve TE moulds light and reduce TM
The ratio of mould light, so as to lift DUV LED luminous efficiency.Although by two above patent by changing the structure of SQW
Can quantum well to a certain extent energy tape sort, change the ratio of TE and TM polarised lights, but can not effectively act as
The effect of polarised light conversion.
In view of the optical anisotropy for being difficult to solve the energy tape sort of nitride semiconductor LED of prior art
With polarised light transfer problem, it is therefore necessary to a kind of nitride semiconductor LED and preparation method thereof is proposed, by inclined
The light that shakes changes the band engineering of incorporating quantum trap, lifts light extraction efficiency and external quantum efficiency.
The content of the invention
In order to solve the above technical problems, it is an object of the invention to：A kind of iii-nitride light emitting devices and its making are provided
Method, it is characterised in that：The V-pits side walls of MQW have polarization optical control layer, and the polarization optical control layer is by SiNx/
MgNyOr MgNy/SiNxMulticycle superlattices core shell structure quantum dot form, the stratum nucleare is by SiNxOr MgNySpherical amount
Son point is formed, and corresponds to the well layer position of SQW positioned at V-pits side walls, and its diameter is no more than well layer thickness, the shell by
SiNxAnd MgNyThe multicycle superlattices of formation are formed, and the barrier layer position of SQW, its shell thickness are corresponded to positioned at V-pits side walls
No more than the half of barrier layer thickness.MgN is made by the V-pits side walls in MQWy/SiNxMulticycle superlattices nucleocapsid
The quantum dot of structure realizes dual polarised light modulation function：1）SiNx/MgNyOr MgNy/ SiNxForm multiple polarised light conversion circle
Face, the TM polarised lights that SQW is emitted are made to be converted to TE polarised lights at transition interface；2）The polarization optical control layer is located at quantum
The V-pits side walls of trap, the well region active layer of SQW is nestled up, regulate and control the top of valence band energy tape sort of SQW, make SQW
Top of valence band energy tape sort, which from crystal field splitting energy CH bands occupies the subband position of top of valence band first and becomes heavy hole HH bands, occupies valence band
The first subband position is pushed up, lifts the outgoing ratio of TE polarised lights, reduces TM polarised light ratios.So as to using polarizing optical control layer
Lift the light extraction efficiency and external quantum efficiency of deep ultraviolet semiconductor light-emitting-diode.
According to the first aspect of the invention, a kind of nitride semiconductor LED, successively including substrate, N-type nitridation
Thing semiconductor, MQW, V-pits, p-type nitride-based semiconductor, the polarization optical control layer of V-pits side walls, the Multiple-quantum
The quantum structure that trap is made up of well layer and barrier layer, the polarization optical control layer of the V-pits side walls is by SiNx/MgNyOr MgNy/
SiNxMulticycle superlattices core shell structure quantum dot form, the stratum nucleare is by SiNxOr MgNySpherical quantum dot form, position
The well layer position of SQW is corresponded in V-pits side walls, its diameter is no more than well layer thickness, and the shell is by SiNxAnd MgNyFormed
Multicycle superlattices form, the barrier layer position of SQW correspond to positioned at V-pits side walls, its shell thickness is no more than barrier layer thickness
The half of degree.
Further, the polarization optical control layer of described V-pits side walls is by SiNx/MgNyOr MgNy/SiNxWhat is formed is more
Periodic Superlattice quantum dot is formed, and wherein periodicity is m, wherein m >=2, the SiNxAnd MgNyComponent be respectively x>0, y>0.
Further, the quantum structure that the MQW is made up of well layer and barrier layer, the thickness of the well layer is K, is built
The thickness of layer is L, wherein 40 Ethylmercurichlorendimides>K>5 Ethylmercurichlorendimides, 200 Ethylmercurichlorendimides>L>40 Ethylmercurichlorendimides, the periodicity of the MQW is n, wherein n
≥3。
Further, the polarization optical control layer of described V-pits side walls is SiNx/MgNyOr MgNy/SiNxMulticycle surpasses
The quantum dot of lattice core shell structure, as formation SiNx/MgNyThe quantum dot of multicycle superlattices core shell structure, first layer SiNx
During the stratum nucleare of spherical quantum dot, the n-1 behind the 1st pair of SQW for corresponding to MQW positioned at V-pits side walls is to SQW
Well layer above, a diameter of a, wherein a≤K, i.e., the diameter of spherical quantum dot are less than or equal to the well layer thickness of SQW；The second layer
The MgN of beginningyAnd SiNxThe shell for forming multicycle superlattices is MgNy/SiNx/MgNy/SiNx/…/MgNy, gross thickness b,
Wherein b≤L/2, i.e. shell gross thickness are less than or equal to a half thickness of the barrier layer of SQW.
Further, the SiN of the polarization optical control layer of the V-pits side wallsx/MgNyOr MgNy/SiNxMulticycle is super brilliant
The quantum dot of lattice core shell structure, as formation MgNy/SiNxThe quantum dot of multicycle superlattices core shell structure, first layer MgNyBall
During the stratum nucleare of shape quantum dot, the n-1 behind the 1st pair of SQW for corresponding to MQW positioned at V-pits side walls is to SQW
Above well layer, a diameter of a, wherein a≤K, i.e., the diameter of spherical quantum dot are less than or equal to the well layer thickness of SQW；The second layer is opened
The SiN of beginningxAnd MgNyThe shell for forming multicycle superlattices is SiNx/MgNy /SiNx/MgNy/…/SiNx, gross thickness b, its
Middle b≤L/2, i.e. shell gross thickness are less than or equal to a half thickness of the barrier layer of SQW.
Further, the MQW is the Al of high Al contentszGa1-zN well layer and barrier layer is formed, the Al groups that trap is built
Divide 1>z>0.4, and the Al components of barrier layer are higher than the Al components of trap；The N-type nitride-based semiconductor and p-type nitride are also high Al
The Al of componentrGa1-rN, Al component 1>r>0.4, and its Al component r is more than the Al components z of SQW.
According to the second aspect of the invention, a kind of preparation method of nitride semiconductor LED, includes following step
Suddenly：
Step 1）Using MOCVD equipment of metal organic chemical vapor deposition on substrate successively extension N-type nitride-based semiconductor and
MQW with V-pits, the quantum structure that the MQW is made up of well layer and barrier layer.
Step 2）Using MOCVD pulse H2High-low pressure engraving method, on MQW surface of the generation with V-pits
Reaction chamber temperature is risen to 900-1100 degrees Celsius, the atmosphere of reative cell is by N2And NH3Switch to pure H2Atmosphere, then, pulse
Mode is passed through H2, control the pressure of reative cell to rise to 500Torr, SQW etching period is 10-100s, closes H2, control is instead
Drop of pressure to 100Torr, the SQW interface processing time for answering room is 10-100s, and above step repeats, until by V-
The well layer of pits side walls etches hemispherical pre-deposition hole.
Step 3）Etched in the well layer of V-pits side walls on hemispherical pre-deposition hole, the atmosphere of reative cell is switched to
N2, pressure is down to 200Torr, and temperature drops to 700-900 degrees Celsius, and is passed through SiH4Or Cp2Mg, formed on pre-deposition hole
Si nano dots or Mg nano dots.
Step 4）The atmosphere of reative cell switches to NH3And N2Mixed gas, drop of pressure to 100Torr, temperature rise to
900-1100 degrees Celsius, the Si nano dots on the pre-deposition hole of the well layer of V-pits side walls or Mg nano dots are nitrogenized and to form SiNx
Or MgNx, continue through NH3And it is passed through SiH4Or Cp2Mg, make SiNxOr MgNxSpherical quantum dot becomes larger and fills full preliminary sedimentation
Product hole, forms the stratum nucleare of spherical quantum dot, and the stratum nucleare is located at V-pits side walls and corresponded to behind the 1st pair of SQW of MQW
N-1 to the well layer of SQW above, a diameter of a, wherein a≤K, i.e., the diameter of the stratum nucleare of spherical quantum dot are less than or equal to quantum
The well layer thickness of trap.
Step 5）The atmosphere for keeping reative cell is NH3And N2Mixed gas, pressure 100Torr, temperature are taken the photograph for 900-1100
Family name's degree, by switching SiH4Or Cp2Mg, in SiNxOr MgNxSiN is deposited on the stratum nucleare of spherical quantum dotxAnd MgNyMulticycle surpass
The shell of lattice, the gross thickness of the shell is b, wherein a≤L/2, i.e. the gross thickness of shell is less than or equal to the barrier layer of SQW
A half thickness.
Step 6）By III organic source and V races gas on MOCVD, continue epitaxial growth p-type nitride-based semiconductor,
It is fabricated to the epitaxial wafer of nitride semiconductor LED.
Brief description of the drawings
Fig. 1 is step 1）Growth complete has the structural representation of the iii-nitride light emitting devices of V-pits MQW.
Fig. 2 is step 2）The well layer of V-pits side walls is etched to the schematic diagram in hemispherical pre-deposition hole.
Fig. 3 is step 3）Formed on the hemispherical pre-deposition hole that the well layer of V-pits side walls etches Si nano dots or
The schematic diagram of Mg nano dots.
Fig. 4 is step 4）The stratum nucleare that spherical quantum dot is made on the pre-deposition hole that the well layer of V-pits side walls etches shows
It is intended to.
Fig. 5 is step 5）In SiNxOr MgNxSiN is deposited on the stratum nucleare of spherical quantum dotxAnd MgNyMulticycle superlattices
Shell schematic diagram.
Fig. 6 is step 6）Continue epitaxial growth p-type nitride-based semiconductor, be fabricated to nitride semiconductor LED
The schematic diagram of epitaxial wafer.
Fig. 7 is the effect diagram of the dual polarised light modulation function of the nitride semiconductor LED of the present invention.
Fig. 8 is the polarization optical control layer of the present invention by SiNx/MgNyOr MgNy/SiNxMulticycle superlattices core shell structure
Quantum dot form stratum nucleare and shell structural representation.
Illustrate：100：Substrate；101：N-type nitride-based semiconductor, 102：MQW, 102a:Well layer, 102b：Barrier layer,
103：V-pits, 104A：The well layer of V-pits side walls etches hemispherical pre-deposition hole, 104B：Si nano dots or Mg nanometers
Point, 105：SiNxOr MgNxThe stratum nucleare of spherical quantum dot, 106：SiNxAnd MgNyMulticycle superlattices shell, 107：Polarization
Optical control layer, 108：P-type nitride-based semiconductor.
Embodiment
Embodiment 1
The present embodiment proposes a kind of nitride semiconductor LED, as shown in fig. 6, include substrate 100 successively, N-type nitridation
Thing semiconductor 101, MQW 102, the well layer 102A of MQW, the barrier layer 102B, V-pits 103, V- of MQW
The well layer of pits side walls etches hemispherical pre-deposition hole 104A, Si nano dots or Mg nano dots 104B, SiNxOr MgNxBall
The stratum nucleare 105, SiN of shape quantum dotxAnd MgNyMulticycle superlattices shell 106, the polarization optical control layer of V-pits side walls
107 and p-type nitride-based semiconductor 108.Described V-pits side walls have polarization optical control layer, it is characterised in that the V- of Multiple-quantum
The polarization optical control layer 107 of the side walls of pits 103 is by SiNx/MgNyOr MgNy/SiNxThe multicycle superlattices core shell structure of formation
Quantum dot form, wherein stratum nucleare is SiNxOr MgNxSpherical quantum dot 105, shell SiNxAnd MgNyMulticycle superlattices
106, the polarization optical control layer has dual polarised light modulation function：First, SiNx/MgNyOr MgNy/ SiNxFormed multiple inclined
Shake light transition interface, TM polarised lights is converted to TE polarised lights in interface；Secondly, the polarization optical control layer regulates and controls SQW
Top of valence band energy tape sort, the top of valence band tape sort of SQW is set to occupy the first subband of top of valence band position from crystal field splitting energy CH bands
Put and become heavy hole HH bands and occupy the subband position of top of valence band first, lift the outgoing ratio of TE polarised lights, reduce TM polarised light ratios
Example, so as to, the light extraction efficiency and external quantum efficiency of lifting deep ultraviolet semiconductor light-emitting-diode, as shown in Figure 7.
The quantum structure that the MQW is made up of well layer 102A and barrier layer 102B, the thickness of the well layer 102A is K,
Barrier layer 102B thickness is L, wherein 40 Ethylmercurichlorendimides>K>5 Ethylmercurichlorendimides, 200 Ethylmercurichlorendimides>L>40 Ethylmercurichlorendimides, the periodicity of the MQW are
N, wherein n >=3.
The polarization optical control layer 107 of the described side walls of V-pits 103 is by SiNx/MgNyOr MgNy/SiNxWhat is formed is more all
Phase superlattices quantum dot is formed, and wherein periodicity is m, wherein m >=2, the SiNxAnd MgNyComponent be respectively x>0, y>0.
The polarization optical control layer 107 of the side walls of V-pits 103 is by SiNx/MgNyOr MgNy/SiNxMulticycle it is super brilliant
The quantum dot of lattice core shell structure is formed, and the stratum nucleare 105 is by SiNxOr MgNySpherical quantum dot form, positioned at V-pits 103
Side wall corresponds to the well layer 102A positions of SQW, and its diameter is no more than well layer 102A thickness, and the shell 106 is by SiNxAnd MgNy
The multicycle superlattices of formation are formed, and the barrier layer 102B positions of SQW are corresponded to positioned at V-pits side walls, and its shell thickness does not surpass
Cross the half of barrier layer 102B thickness.
The polarization optical control layer 107 of the described side walls of V-pits 103 is SiNx/MgNyOr MgNy/SiNxMulticycle is super brilliant
The quantum dot of lattice core shell structure, as formation SiNx/MgNyThe quantum dot of multicycle superlattices core shell structure, first layer SiNxBall
During the stratum nucleare 105 of shape quantum dot, the n-1 behind 1st pair SQW of the side walls of V-pits 103 corresponding to MQW 102
Above the well layer 102A of SQW, a diameter of a, wherein a≤K, i.e., the diameter of the stratum nucleare 105 of spherical quantum dot are less than or equal to amount
The well layer 102A thickness of sub- trap；The MgN that the second layer startsyAnd SiNxThe gross thickness for forming the shell 106 of multicycle superlattices is b,
Wherein b≤L/2, the i.e. gross thickness of shell 106 are less than or equal to the barrier layer 102B of a SQW half thickness.
The SiN of the polarization optical control layer of the side walls of V-pits 103x/MgNyOr MgNy/SiNx, as formation MgNy/SiNx
The quantum dot of multicycle superlattices core shell structure, first layer MgNyDuring the stratum nucleare 105 of spherical quantum dot, positioned at V-pits 103
Side wall correspond to MQW 102 the 1st pair of SQW behind n-1 to the well layer 102A of SQW above, a diameter of a, its
Middle a≤K, i.e., the diameter of the stratum nucleare 105 of spherical quantum dot are less than or equal to the well layer 102A thickness of SQW；What the second layer started
SiNxAnd MgNyThe gross thickness for forming the shell 106 of multicycle superlattices is b, wherein b≤L/2, i.e. the gross thickness of shell 106 is small
In a half thickness of the barrier layer equal to SQW.
The MQW is the Al of high Al contentszGa1-zN well layer 102A and barrier layer 102B is formed, the Al components that trap is built
1>z>0.4, and the Al components of barrier layer are higher than the Al components of trap；The N-type nitride-based semiconductor 101 and p-type nitride 108 are also
The Al of high Al contentsrGa1-rN, Al component 1>r>0.4, and its Al component r is more than the Al components z of SQW.
A kind of preparation method of nitride semiconductor LED, is comprised the steps of：
Step 1）Using MOCVD equipment of metal organic chemical vapor deposition extension N-type nitride-based semiconductor successively on the substrate 100
101 and with V-pits 103 MQW 102, the amount that the MQW 102 is made up of well layer 102A and barrier layer 102B
Minor structure, as shown in Figure 1.
Step 2）Using MOCVD pulse H2High-low pressure engraving method, in MQW of the generation with V-pits 103
Reaction chamber temperature is risen to 900-1100 degrees Celsius by 102 surfaces, and the atmosphere of reative cell is by N2And NH3Switch to pure H2Atmosphere, so
Afterwards, pulse mode is passed through H2, control the pressure of reative cell to rise to 500Torr, SQW etching period is 10-100s, is closed
H2, the drop of pressure of reative cell is controlled to 100Torr, and the SQW interface processing time is 10-100s, and above step repeats
OK, until the well layer of V-pits side walls is etched into hemispherical pre-deposition cheats 104A, as shown in Figure 2.
Step 3）Etched in the well layer 102A of the side walls of V-pits 103 on hemispherical pre-deposition hole 104A, by reative cell
Atmosphere switch to N2, pressure is down to 200Torr, and temperature drops to 700-900 degrees Celsius, and is passed through SiH4Or Cp2Mg, pre-
Deposition forms Si nano dots or Mg nano dot 104B on hole, as shown in Figure 3.
Step 4）The atmosphere of reative cell switches to NH3And N2Mixed gas, drop of pressure to 100Torr, temperature rise to
900-1100 degrees Celsius, the Si nano dots on the pre-deposition hole of the well layer of the side walls of V-pits 103 or Mg nano dots 104B are nitrogenized
Form SiNxOr MgNx, continue through NH3And it is passed through SiH4Or Cp2Mg, make SiNxOr MgNxSpherical quantum dot becomes larger and filled out
Cheated full of pre-deposition, form the stratum nucleare 105 of spherical quantum dot, the stratum nucleare 105 is located at the side walls of V-pits 103 and corresponds to Multiple-quantum
N-1 behind 1st pair of SQW of trap 102 to the well layer 102A of SQW above, a diameter of a, wherein a≤K, i.e., spherical quantum
The diameter of the stratum nucleare 105 of point is less than or equal to the well layer 102A of SQW thickness, as shown in Figure 4.
Step 5）The atmosphere for keeping reative cell is NH3And N2Mixed gas, pressure 100Torr, temperature are taken the photograph for 900-1100
Family name's degree, by switching SiH4Or Cp2Mg, in SiNxOr MgNxSiN is deposited on the stratum nucleare 105 of spherical quantum dotxAnd MgNyIt is more all
The shell 106 of phase superlattices, the gross thickness of the shell 106 is b, wherein a≤L/2, i.e. the gross thickness of shell 106 is less than or equal to
The barrier layer 102B of a SQW half thickness.The SiNxOr MgNxThe stratum nucleare 105 and SiN of spherical quantum dotxAnd MgNyIt is more all
The shell 106 of phase superlattices forms the polarization optical control layer 107 of V-pits side walls, i.e. SiNx/MgNyOr MgNy/SiNxFormed
The quantum dot of multicycle superlattices core shell structure, as shown in Figure 5.
Step 6）By III organic source and V races gas on MOCVD, continue epitaxial growth p-type nitride-based semiconductor
108, the epitaxial wafer of nitride semiconductor LED is fabricated to, as shown in Figure 6.
Embodiment 2
As different from Example 1, when the stratum nucleare of spherical quantum dot is SiNxWhen, described SiNxAnd MgNyMulticycle it is super brilliant
The shell 106 of lattice can form MgNy/SiNx/MgNy/SiNx/…/MgNy, periodicity is m, wherein m >=2, as shown in Figure 8.
Embodiment 3
As different from Example 1, when the stratum nucleare of spherical quantum dot is MgNyWhen, described SiNxAnd MgNyMulticycle it is super brilliant
The shell 106 of lattice can form SiNx/MgNy/SiNx/MgNy/…/SiNx, periodicity is m, wherein m >=2, as shown in Figure 8.
Embodiment of above is merely to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art, is not taking off
In the case of from the spirit and scope of the present invention, various modifications and variation, therefore all equivalent skills can be made to the present invention
Art scheme falls within scope of the invention, and scope of patent protection of the invention should regard Claims scope and limit.
Claims (6)
- A kind of 1. nitride semiconductor LED, successively including substrate, N-type nitride-based semiconductor, MQW, V- Pits, p-type nitride-based semiconductor, the polarization optical control layer of V-pits side walls, it is characterised in that：The MQW by well layer and The quantum structure that barrier layer is formed, the polarization optical control layer of the V-pits side walls is by SiNx/MgNyOr MgNy/SiNxMulticycle The quantum dot of superlattices core shell structure is formed, and the stratum nucleare is by SiNxOr MgNySpherical quantum dot form, positioned at V-pits side walls The well layer position of corresponding SQW, its diameter are no more than well layer thickness, and the shell is by SiNxAnd MgNyThe multicycle of formation is super brilliant Lattice is into corresponding to the barrier layer position of SQW positioned at V-pits side walls, its shell thickness is no more than the half of barrier layer thickness.
- 2. the polarization optical control layer has dual polarised light modulation function：First, SiNx/MgNyOr MgNy/ SiNxFormed multiple inclined Shake light transition interface, the TM polarised lights that SQW is emitted is converted to TE polarised lights at transition interface；Secondly, the polarization is light-operated Preparative layer regulates and controls the top of valence band energy tape sort of SQW, the top of valence band tape sort of SQW is occupied from crystal field splitting energy CH bands The subband position of top of valence band first becomes heavy hole HH bands and occupies the subband position of top of valence band first, lifts the outgoing ratio of TE polarised lights Example, TM polarised light ratios are reduced, so as to the light extraction efficiency and external quantum efficiency of lifting deep ultraviolet semiconductor light-emitting-diode.
- A kind of 3. nitride semiconductor LED according to claim 1, it is characterised in that：Described V-pits sides The polarization optical control layer of wall is by SiNx/MgNyOr MgNy/SiNxThe quantum dot of the multicycle superlattices core shell structure of formation is formed, Wherein periodicity is m, m >=2, the SiNxAnd MgNyComponent be respectively x>0, y>0.
- A kind of 4. nitride semiconductor LED according to claim 1, it is characterised in that：The MQW by The quantum structure that well layer and barrier layer are formed, the thickness of the well layer is K, and the thickness of barrier layer is L, wherein 40 Ethylmercurichlorendimides>K>5 Ethylmercurichlorendimides, 200 Ethylmercurichlorendimides>L>40 Ethylmercurichlorendimides, the periodicity of the MQW is n, wherein n >=3.
- A kind of 5. nitride semiconductor LED according to claim 1, it is characterised in that：Described V-pits sides The polarization optical control layer of wall is SiNx/MgNyOr MgNy/SiNxThe quantum dot of multicycle superlattices core shell structure, when first layer is SiNxThe stratum nucleare of spherical quantum dot, the n-1 behind the 1st pair of SQW for corresponding to MQW positioned at V-pits side walls is to quantum Above the well layer of trap, a diameter of a, wherein a≤K, i.e., the diameter of the stratum nucleare of spherical quantum dot are less than or equal to the well layer thickness of SQW Degree；The MgN that the second layer startsyAnd SiNxThe shell for forming multicycle superlattices is MgNy/SiNx/MgNy/SiNx/…/MgNy, always Thickness is b, wherein b≤L/2, i.e., the gross thickness of shell is less than or equal to a half thickness of the barrier layer of SQW.
- A kind of 6. nitride semiconductor LED according to claim 1, it is characterised in that：The V-pits side walls Polarization optical control layer SiNx/MgNyOr MgNy/SiNxThe quantum dot of multicycle superlattices core shell structure, when first layer is MgNy The stratum nucleare of spherical quantum dot, the n-1 behind the 1st pair of SQW for corresponding to MQW positioned at V-pits side walls is to SQW Above well layer, a diameter of a, wherein a≤K, i.e., the diameter of the stratum nucleare of spherical quantum dot are less than or equal to the well layer thickness of SQW；The The SiN of two layers of beginningxAnd MgNyThe shell for forming multicycle superlattices is SiNx/MgNy/SiNx/MgNy/…/SiNx, gross thickness For b, wherein b≤L/2, i.e. the gross thickness of shell is less than or equal to a half thickness of the barrier layer of SQW；A kind of preparation method of nitride semiconductor LED, is comprised the steps of：Step 1）Using MOCVD equipment of metal organic chemical vapor deposition on substrate successively extension N-type nitride-based semiconductor and MQW with V-pits, the quantum structure that the MQW is made up of well layer and barrier layer；Step 2）Using MOCVD pulse H2High-low pressure engraving method, it will be reacted on MQW surface of the generation with V-pits Room temperature rises to 900-1100 degrees Celsius, and the atmosphere of reative cell is by N2And NH3Switch to pure H2Atmosphere, then, pulse mode is led to Enter H2, control the pressure of reative cell to rise to 500Torr, SQW etching period is 10-100s, closes H2, control reative cell Drop of pressure to 100Torr, the SQW interface processing time is 10-100s, and above step repeats, until by V-pits sides The well layer of wall etches hemispherical pre-deposition hole；Step 3）Etched in the well layer of V-pits side walls on hemispherical pre-deposition hole, the atmosphere of reative cell is switched into N2, pressure 200Torr is down to by force, temperature drops to 700-900 degrees Celsius, and is passed through SiH4Or Cp2Mg, Si nanometers are formed on pre-deposition hole Point or Mg nano dots；Step 4）The atmosphere of reative cell switches to NH3And N2Mixed gas, drop of pressure to 100Torr, temperature rise to 900- 1100 degrees Celsius, the Si nano dots on the pre-deposition hole of the well layer of V-pits side walls or Mg nano dots are nitrogenized and to form SiNxOr MgNx, continue through NH3And it is passed through SiH4Or Cp2Mg, make SiNxOr MgNxSpherical quantum dot becomes larger and fills full pre-deposition Hole, forms the stratum nucleare of spherical quantum dot, and the stratum nucleare is located at V-pits side walls and corresponded to behind the 1st pair of SQW of MQW N-1 to the well layer of SQW above, a diameter of a, wherein a≤K, i.e., the diameter of the stratum nucleare of spherical quantum dot are less than or equal to SQW Well layer thickness；Step 5）The atmosphere for keeping reative cell is NH3And N2Mixed gas, pressure 100Torr, temperature are that 900-1100 is Celsius Degree, by switching SiH4Or Cp2Mg, in SiNxOr MgNxSiN is deposited on the stratum nucleare of spherical quantum dotxAnd MgNyMulticycle it is super brilliant The shell of lattice, the gross thickness of the shell is b, wherein a≤L/2, i.e. the gross thickness of shell is less than or equal to the barrier layer of SQW One half thickness；Step 6）By III organic source and V races gas on MOCVD, continue epitaxial growth p-type nitride-based semiconductor, make Into the epitaxial wafer of nitride semiconductor LED.
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