CN109841711A - White light LEDs and preparation method thereof based on non-radiative resonance energy transfer mechanism - Google Patents
White light LEDs and preparation method thereof based on non-radiative resonance energy transfer mechanism Download PDFInfo
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Abstract
A kind of white light LEDs and preparation method thereof based on non-radiative resonance energy transfer mechanism comprising: substrate；Low temperature nucleation layer is located on the substrate；Undoped GaN layer is located on the low temperature nucleation layer；N-type doping GaN layer is located in the undoped GaN layer；InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；AlGaN electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；P-GaN layers, it is located on the AlGaN electronic barrier layer；Micro-/ nano hole or micro-/ nano column array include n (n >=1) a micro-/ nano hole or micro-/ nano column；And mixing quantum dot, it is filled among the micro-/ nano hole or between micro-nano column array gap；By changing the proportion of mixing quantum dot, the adjusting of the component of In in incorporating quantum trap forms full spectrum, realizes high-color rendering energy.
Description
Technical field
This disclosure relates to semiconductor epitaxial and chip technology field, more particularly to it is a kind of based on non-radiative resonance energy transfer
White light LEDs of mechanism and preparation method thereof.
Background technique
The LED that quantum dot is coated in made white light on blue-ray LED as light conversion material is being improved into colour rendering index, hair
Preferable effect is achieved in light efficiency, however, to obtain the white light LEDs of high color rendering index (CRI) and high luminous efficiency simultaneously
Still relatively difficult.For this purpose, on white light field, it is traditional commercial to substitute that researchers have developed many novel structures
LED structure, to the white light LED part of more preferable performance to be obtained.In this regard, researcher proposes a kind of new knot
Structure --- the white light LEDs based on Quantum Well/quantum dot non-radiative resonance energy transfer mechanism.In the luminous zone of LED, electricity
To between quantum dot, there are a kind of approach that energy directly transmits in son-hole, i.e.,Resonant energy transfer process.Its
Principle is, when the exciton in the exciton (electron-hole pair) and quantum dot in quantum well structure is very close, between the two can
Energy transfer is carried out, i.e., a part of exciton generated in Quantum Well not by radiation recombination, but passes through non-radiative energy
Transmittance process directly transfers energy to neighbouring quantum dot, to excite electron-hole pair, then generate one it is new compound logical
Road excites quantum dot light emitting.It physically says, this direct non-radiative energy transmission path is mainly by between dipole
What interaction generated, i.e., trap point coupling process and the ultrafast interband relaxation occurred in quantum dot are formed.By fluorescent powder
It shines again multiple processes coated in white light LEDs made by blue-ray LED after luminous --- excitation ---, there is certain effect
Rate loss, luminous efficiency is restricted, on the contrary, this non-radiative energy transmittance process then reduces the intermediate mistake of energy transmission
Journey improves luminescent quality to improve color transfer efficiency.2016, Liu Bin seminar, Nanjing University devised one group of nitrogen
The nanocrystal light emitting diode of compound gets the nanometer between its Quantum Well InGan/GaN using nanometer embossing
Hole/column array, then filled quantum dot into nano-pore/column array gap by the way of spin coating, to form mixed hybridization
LED structure, it is found that this method can substantially reduce the Decay of exciton, and energy conversion efficiency can obtain height
Up to 80%, thus optimality criterion, up to 82, the colour temperature that white light emission goes out can be covered colour rendering index from 2629K to 6636K
The ranges such as warm white, natural white and cold white have been covered, preferable illumination effect is achieved.But in this technology
The colour rendering index of middle white light is again without certain height is reached, and therefore, improves colour rendering index, makes chromaticity coordinates close to (1/3,1/
3) also especially urgent.
Disclosure
(1) technical problems to be solved
Based on the above issues, present disclose provides a kind of white light LEDs based on non-radiative resonance energy transfer mechanism and its
Preparation method, the technical problems such as technical problems such as colour rendering index to alleviate white light in the prior art is relatively low.
(2) technical solution
In one aspect of the present disclosure, a kind of white light LEDs based on non-radiative resonance energy transfer mechanism are provided, comprising:
Substrate；Low temperature nucleation layer is located on the substrate；Undoped GaN layer is located on the low temperature nucleation layer；N-type doping GaN layer,
In the undoped GaN layer；InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；
AlGaN electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；P-GaN layers, it is located at the AlGaN
On electronic barrier layer；Micro-/ nano hole array, include n micro-/ nano hole, the micro-/ nano hole extend vertically through it is P-GaN layers described,
AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer to part n-type doping GaN layer；And mixing quantum
Point is filled among the micro-/ nano hole.
In the disclosure, another white light LEDs based on non-radiative resonance energy transfer mechanism are also provided, comprising: substrate；
Low temperature nucleation layer is located on the substrate；Undoped GaN layer is located on the low temperature nucleation layer；N-type doping GaN layer, is located at
In the undoped GaN layer；InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；AlGaN
Electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；P-GaN layers, it is located at the AlGaN electronics
On barrier layer；Micro-/ nano column array, includes n micro-/ nano column, the micro-/ nano column from top to bottom includes P-GaN layers,
AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer and part n-type doping GaN layer；And combined amount
It is sub-, it is filled between the gap of the micro-/ nano column array.
In the embodiments of the present disclosure, the substrate prepares material, comprising: any one in sapphire, silicon carbide or silicon
Kind.
In the embodiments of the present disclosure, the low temperature nucleation layer with a thickness of 5nm~200nm；The thickness of the undoped GaN layer
Degree is 0.2 μm~10 μm；The n-type doping GaN layer with a thickness of 0.2 μm~10 μm.
In the embodiments of the present disclosure, the InGaN/GaN dual wavelength multi-quantum pit structure layer includes: amount of blue from the bottom to top
Sub- trap；The barrier layer GaN；And green Quantum Well.
In the embodiments of the present disclosure, the AlGaN electronic barrier layer with a thickness of 10nm~250nm.
In the embodiments of the present disclosure, described P-GaN layers with a thickness of 10nm~250nm.
In the embodiments of the present disclosure, the mixing quantum dot, comprising: red quantum dot, yellow quantum dot and green amount
Sub- point.
In another aspect of the present disclosure, a kind of preparation of white light LEDs based on non-radiative resonance energy transfer mechanism is provided
Method is used to prepare the above-described white light LEDs based on non-radiative resonance energy transfer mechanism, described to be based on non-radiative resonance
The preparation method of the white light LEDs of energy transfer mechanism, comprising: step A: growing low temperature nucleating layer on substrate；Step B: in step
Undoped GaN layer is grown on the low temperature nucleation layer that rapid A is grown；Step C: it is grown in the undoped GaN layer that step B is grown
N-type doping GaN layer；Step D: InGaN/GaN dual wavelength multiple quantum wells knot is prepared in the n-type doping GaN layer that step C is grown
Structure layer；Step E: AlGaN electronic barrier layer is grown on the InGaN/GaN dual wavelength multi-quantum pit structure layer prepared by step D；
Step F: P-GaN layers are grown on the AlGaN electronic barrier layer that step E is grown；And step G: the P- prepared by step F
Preparation extends vertically through P-GaN layers described, AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer in GaN layer
To the micro-/ nano hole of part n-type doping GaN layer or from top to bottom including P-GaN layers, AlGaN electronic barrier layer, InGaN/GaN
The micro-/ nano column array of dual wavelength multi-quantum pit structure layer and part n-type doping GaN layer, and among micro-/ nano hole or
Filling mixing quantum dot, completes the white light LEDs based on non-radiative resonance energy transfer mechanism between the gap of micro-/ nano column array
Preparation.
In the embodiments of the present disclosure, successively grown from the bottom to top in the step D blue Quantum Well, the barrier layer GaN and
Green Quantum Well, wherein growth temperature be 650 DEG C~1050 DEG C, growth pressure be 30Torr~400Torr under the conditions of prepare
Blue Quantum Well；It is 600 DEG C~900 DEG C in growth temperature, growth pressure prepares green amount under the conditions of being 30Torr~400Torr
Sub- trap.
(3) beneficial effect
It can be seen from the above technical proposal that white light LEDs of the disclosure based on non-radiative resonance energy transfer mechanism and its
Preparation method at least has the advantages that one of them or in which a part:
(1) white light LEDs based on non-radiative resonance energy transfer mechanism are by InGaN/GaN dual wavelength multi-quantum pit structure
Combine with quantum dot, which carries out non-radiative resonance energy using the exciton in the exciton and quantum dot in Quantum Well and turn
It moves, improves luminous efficiency；
(2) InGaN/GaN dual wavelength multi-quantum pit structure can be made to emit by the component of In in quantum well
The light of dual wavelength, i.e. blue light and green light out, in conjunction with the combined amount among micro-/ nano hole or between micro-/ nano column array gap
The proportion of sub- point (including red quantum dot in mixing quantum dot), forms full spectrum, realizes that high-color rendering can (colour rendering index >
90)。
Detailed description of the invention
Fig. 1 is the cross section structure for the white light LEDs based on non-radiative resonance energy transfer mechanism that the embodiment of the present disclosure provides
Schematic diagram.
Fig. 2 is the InGaN/GaN for the white light LEDs based on non-radiative resonance energy transfer mechanism that the embodiment of the present disclosure provides
Dual wavelength multi-quantum pit structure schematic diagram of a layer structure.
Fig. 3 is the preparation method for the white light LEDs based on non-radiative resonance energy transfer mechanism that the embodiment of the present disclosure provides
Flow chart.
Fig. 4 is the InGaN/GaN for the white light LEDs based on non-radiative resonance energy transfer mechanism that the embodiment of the present disclosure provides
The growth flow chart of dual wavelength multi-quantum pit structure layer.
Specific embodiment
Present disclose provides a kind of white light LEDs and preparation method thereof based on non-radiative resonance energy transfer mechanism, be by
Obtained by InGaN/GaN dual wavelength multi-quantum pit structure combines with mixing quantum dot.The structure can be using in Quantum Well
Exciton in exciton and quantum dot carries out non-radiative resonance energy transfer, improves luminous efficiency；And quantum can also be passed through
The component of In can make InGaN/GaN dual wavelength multi-quantum pit structure launch the light of dual wavelength, i.e. blue light and green light in trap, together
When also can be changed micro-/ nano hole among or micro-/ nano column array gap between mixing quantum dot (mixing quantum dot in include
Red quantum dot) proportion, the two combines, forms full spectrum, realize high-color rendering energy.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
In the embodiments of the present disclosure, a kind of white light LEDs based on non-radiative resonance energy transfer mechanism are provided, in conjunction with Fig. 1
With shown in Fig. 2, the white light LEDs based on non-radiative resonance energy transfer mechanism, comprising:
Substrate；
Low temperature nucleation layer is located on the substrate；
Undoped GaN layer is located on the low temperature nucleation layer；
N-type doping GaN layer is located in the undoped GaN layer；
InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；
AlGaN electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；
P-GaN layers, it is located on the AlGaN electronic barrier layer；
Micro-/ nano hole array includes n (n >=1) a micro-/ nano hole, and the micro-/ nano hole extends vertically through the P-GaN
Layer, AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer to part n-type doping GaN layer；And
Quantum dot is mixed, is filled among the micro-/ nano hole.
The InGaN/GaN dual wavelength multi-quantum pit structure layer includes: blue Quantum Well from the bottom to top；The barrier layer GaN；With
And green Quantum Well.
In the embodiments of the present disclosure, another white light LEDs based on non-radiative resonance energy transfer mechanism, packet are also provided
It includes:
Substrate；
Low temperature nucleation layer is located on the substrate；
Undoped GaN layer is located on the low temperature nucleation layer；
N-type doping GaN layer is located in the undoped GaN layer；
InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；
AlGaN electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；
P-GaN layers, it is located on the AlGaN electronic barrier layer；
Micro-/ nano column array includes n (n >=1) a micro-/ nano column, and the micro-/ nano column from top to bottom includes P-GaN
Layer, AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer and part n-type doping GaN layer；And
Quantum dot is mixed, is filled between the gap of the micro-/ nano column array.
The substrate includes: one of sapphire, silicon carbide or silicon；
The low temperature nucleation layer with a thickness of 5nm~200nm.
The undoped GaN layer with a thickness of 0.2 μm~10 μm.
The n-type doping GaN layer with a thickness of 0.2 μm~10 μm；
The AlGaN electronic barrier layer with a thickness of 10nm~250nm；
Described P-GaN layers with a thickness of 10nm~250nm；
The mixing quantum dot, comprising: red quantum dot, yellow quantum dot and green quantum dot.
The low temperature nucleation layer is the growth quality in order to improve GaN epitaxial film；Undoped GaN layer be in order to obtain compared with
The flat surface GaN；The effect of n-type doping GaN layer is to provide compound carrier for luminescent layer (dual wavelength quantum well structure layer),
That is electronics；Among InGaN/GaN dual wavelength multi-quantum pit structure layer and micro-/ nano hole or between micro-nano column array gap
Mixing quantum dot is main light emitting source；AlGaN electronic barrier layer is in order to which more carriers are limited in the active of chip
Rate of radiative recombination is improved in area, i.e. raising internal quantum efficiency；P-GaN layers of effect is also that compound carrier is provided for luminescent layer, i.e.,
Hole.
In the embodiments of the present disclosure, a kind of preparation of white light LEDs based on non-radiative resonance energy transfer mechanism is also provided
Method is used to prepare the above-mentioned white light LEDs based on non-radiative resonance energy transfer mechanism, in conjunction with shown in Fig. 3 and Fig. 4, the base
In the preparation method of the white light LEDs of non-radiative resonance energy transfer mechanism, comprising:
Step A: growing low temperature nucleating layer on substrate；
The growing low temperature nucleating layer on a substrate, wherein substrate can be nucleated with one of sapphire, silicon carbide or silicon
The thickness of layer can use 5nm~200nm.
Step B: undoped GaN layer is grown on the low temperature nucleation layer that step A is grown；
Undoped GaN layer is grown on low temperature nucleation layer, the thickness of undoped GaN layer is 0.2 μm~10 μm desirable.
Step C: n-type doping GaN layer is grown in the undoped GaN layer that step B is grown；
N-type doping GaN layer is grown in undoped GaN layer, the thickness of n-type doping GaN layer is 0.2 μm~10 μm desirable.
Step D: InGaN/GaN dual wavelength multi-quantum pit structure layer is prepared in the n-type doping GaN layer that step C is grown；
In the step D, blue Quantum Well, the barrier layer GaN and green Quantum Well are successively grown from the bottom to top, is completed
The preparation of InGaN/GaN dual wavelength multi-quantum pit structure layer.It wherein, is 650 DEG C~1050 DEG C in growth temperature, growth pressure is
Blue Quantum Well is prepared under the conditions of 30Torr~400Torr；It is 600 DEG C~900 DEG C in growth temperature, growth pressure 30Torr
Green Quantum Well is prepared under the conditions of~400Torr.
Step E: AlGaN electronic blocking is grown on the InGaN/GaN dual wavelength multi-quantum pit structure layer prepared by step D
Layer；
The AlGaN electronic blocking of one layer of 10nm~250nm thickness is grown on InGaN/GaN dual wavelength multi-quantum pit structure layer
Layer.
Step F: P-GaN layers are grown on the AlGaN electronic barrier layer that step E is grown；
A layer GaN layer is mixed in the p-type of one layer of 10nm~250nm thickness of AlGaN electronic barrier layer regrowth.
Step G: preparation extends vertically through P-GaN layers described, AlGaN electronic blocking on the P-GaN layer prepared by step F
Layer, the micro-/ nano hole of InGaN/GaN dual wavelength multi-quantum pit structure layer to part n-type doping GaN layer from top to bottom include P-
GaN layer, AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer and part n-type doping GaN layer it is micro-/
Nano column array, and filling mixing quantum dot among micro-/ nano hole or between the gap of micro-/ nano column array, complete to be based on
The preparation of the white light LEDs of non-radiative resonance energy transfer mechanism.
The mixing quantum dot, comprising: red quantum dot, yellow quantum dot and green quantum dot.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the implementation for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it.
According to above description, those skilled in the art should be to the disclosure based on the white of non-radiative resonance energy transfer mechanism
Light LED and preparation method thereof has clear understanding.
In conclusion present disclose provides a kind of white light LEDs based on non-radiative resonance energy transfer mechanism and its preparations
Method is obtained by being combined by InGaN/GaN dual wavelength multi-quantum pit structure with mixing quantum dot.The structure energy utilization
Exciton in exciton and quantum dot in sub- trap carries out non-radiative recombination energy transfer, improves luminous efficiency；And it can also pass through
The component of In can make InGaN/GaN dual wavelength multi-quantum pit structure launch the light of dual wavelength, i.e. blue light in quantum well
And green light, while mixing quantum dot (the mixing quantum among micro-/ nano hole or between micro-/ nano column array gap also can be changed
Include red coloration quantum dot in point) proportion, the two combines, forms full spectrum, realize high-color rendering energy.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Those skilled in the art will understand that can be carried out adaptively to the module in the equipment in embodiment
Change and they are arranged in one or more devices different from this embodiment.It can be the module or list in embodiment
Member or component are combined into a module or unit or component, and furthermore they can be divided into multiple submodule or subelement or
Sub-component.Other than such feature and/or at least some of process or unit exclude each other, it can use any
Combination is to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so disclosed
All process or units of what method or apparatus are combined.Unless expressly stated otherwise, this specification is (including adjoint power
Benefit require, abstract and attached drawing) disclosed in each feature can carry out generation with an alternative feature that provides the same, equivalent, or similar purpose
It replaces.Also, in the unit claims listing several devices, several in these devices can be by same hard
Part item embodies.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of white light LEDs based on non-radiative resonance energy transfer mechanism, comprising:
Substrate；
Low temperature nucleation layer is located on the substrate；
Undoped GaN layer is located on the low temperature nucleation layer；
N-type doping GaN layer is located in the undoped GaN layer；
InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；
AlGaN electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；
P-GaN layers, it is located on the AlGaN electronic barrier layer；
Micro-/ nano hole array includes n micro-/ nano hole, and the micro-/ nano hole extends vertically through P-GaN layers described, AlGaN electronics
Barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer to part n-type doping GaN layer；And
Quantum dot is mixed, is filled among the micro-/ nano hole.
2. a kind of white light LEDs based on non-radiative resonance energy transfer mechanism, comprising:
Substrate；
Low temperature nucleation layer is located on the substrate；
Undoped GaN layer is located on the low temperature nucleation layer；
N-type doping GaN layer is located in the undoped GaN layer；
InGaN/GaN dual wavelength multi-quantum pit structure layer is located in the n-type doping GaN layer；
AlGaN electronic barrier layer is located on the InGaN/GaN dual wavelength multi-quantum pit structure layer；
P-GaN layers, it is located on the AlGaN electronic barrier layer；
Micro-/ nano column array includes n micro-/ nano column, and the micro-/ nano column from top to bottom includes P-GaN layers, AlGaN electronics
Barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer and part n-type doping GaN layer；And
Quantum dot is mixed, is filled between the gap of the micro-/ nano column array.
3. the white light LEDs according to claim 1 or 2 based on non-radiative resonance energy transfer mechanism, the system of the substrate
Standby material, comprising: any one in sapphire, silicon carbide or silicon.
4. the white light LEDs according to claim 1 or 2 based on non-radiative resonance energy transfer mechanism, the low temperature nucleation
Layer with a thickness of 5nm~200nm；The undoped GaN layer with a thickness of 0.2 μm~10 μm；The thickness of the n-type doping GaN layer
Degree is 0.2 μm~10 μm.
5. the white light LEDs according to claim 1 or 2 based on non-radiative resonance energy transfer mechanism, the InGaN/GaN
Dual wavelength multi-quantum pit structure layer includes: blue Quantum Well from the bottom to top；The barrier layer GaN；And green Quantum Well.
6. the white light LEDs according to claim 1 or 2 based on non-radiative resonance energy transfer mechanism, the AlGaN electronics
Barrier layer with a thickness of 10nm~250nm.
7. the white light LEDs according to claim 1 or 2 based on non-radiative resonance energy transfer mechanism, described P-GaN layers
With a thickness of 10nm~250nm.
8. the white light LEDs according to claim 1 or 2 based on non-radiative resonance energy transfer mechanism, the mixing quantum
Point, comprising: red quantum dot, yellow quantum dot and green quantum dot.
9. a kind of preparation method of the white light LEDs based on non-radiative resonance energy transfer mechanism, be used to prepare as claim 1 to
8 described in any item white light LEDs based on non-radiative resonance energy transfer mechanism, it is described to be based on non-radiative resonance energy transfer machine
The preparation method of the white light LEDs of system, comprising:
Step A: growing low temperature nucleating layer on substrate；
Step B: undoped GaN layer is grown on the low temperature nucleation layer that step A is grown；
Step C: n-type doping GaN layer is grown in the undoped GaN layer that step B is grown；
Step D: InGaN/GaN dual wavelength multi-quantum pit structure layer is prepared in the n-type doping GaN layer that step C is grown；
Step E: AlGaN electronic barrier layer is grown on the InGaN/GaN dual wavelength multi-quantum pit structure layer prepared by step D；
Step F: P-GaN layers are grown on the AlGaN electronic barrier layer that step E is grown；And
Step G: on the P-GaN layer prepared by step F preparation extend vertically through P-GaN layers described, AlGaN electronic barrier layer,
InGaN/GaN dual wavelength multi-quantum pit structure layer is to the micro-/ nano hole of part n-type doping GaN layer or from top to bottom including P-GaN
Layer, AlGaN electronic barrier layer, InGaN/GaN dual wavelength multi-quantum pit structure layer and part n-type doping GaN layer it is micro-/receive
Rice column array, and filling mixing quantum dot among micro-/ nano hole or between the gap of micro-/ nano column array, are completed based on non-
Radiate the preparation of the white light LEDs of Resonance energy transfer mechanism.
10. the preparation method of the white light LEDs according to claim 9 based on non-radiative resonance energy transfer mechanism, step D
In successively grow blue Quantum Well, the barrier layer GaN and green Quantum Well from the bottom to top, wherein in growth temperature be 650 DEG C
~1050 DEG C, growth pressure prepares blue Quantum Well under the conditions of being 30Torr~400Torr；It is 600 DEG C~900 in growth temperature
DEG C, growth pressure prepares green Quantum Well under the conditions of being 30Torr~400Torr.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379897A (en) * | 2019-07-01 | 2019-10-25 | 东南大学 | III group-III nitride Quantum Well-metal-quantum dot mixed white light LED component |
| CN113257966A (en) * | 2021-04-13 | 2021-08-13 | 深圳市思坦科技有限公司 | LED chip structure, preparation method thereof and display module |
| CN113451465A (en) * | 2020-08-12 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Light emitting diode, manufacturing method thereof and display screen |
| WO2021212336A1 (en) * | 2020-04-21 | 2021-10-28 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode and manufacturing method therefor |
| CN114300594A (en) * | 2021-12-28 | 2022-04-08 | 福州大学 | High-efficiency NanoLED structure suitable for near-to-eye display equipment and manufacturing method thereof |
| CN115050860A (en) * | 2022-06-15 | 2022-09-13 | 江苏第三代半导体研究院有限公司 | Semiconductor light-emitting structure preparation method and device based on III-group nitride quantum dots |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110379897A (en) * | 2019-07-01 | 2019-10-25 | 东南大学 | III group-III nitride Quantum Well-metal-quantum dot mixed white light LED component |
| WO2021212336A1 (en) * | 2020-04-21 | 2021-10-28 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode and manufacturing method therefor |
| US11942570B2 (en) | 2020-04-21 | 2024-03-26 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Micro light-emitting diode comprising nanoring and manufacturing method thereof |
| CN113451465A (en) * | 2020-08-12 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Light emitting diode, manufacturing method thereof and display screen |
| CN113451465B (en) * | 2020-08-12 | 2022-04-01 | 重庆康佳光电技术研究院有限公司 | Light emitting diode, manufacturing method thereof and display screen |
| CN113257966A (en) * | 2021-04-13 | 2021-08-13 | 深圳市思坦科技有限公司 | LED chip structure, preparation method thereof and display module |
| CN114300594A (en) * | 2021-12-28 | 2022-04-08 | 福州大学 | High-efficiency NanoLED structure suitable for near-to-eye display equipment and manufacturing method thereof |
| CN114300594B (en) * | 2021-12-28 | 2023-09-29 | 福州大学 | High-efficiency NanoLED structure suitable for near-eye display equipment and manufacturing method thereof |
| CN115050860A (en) * | 2022-06-15 | 2022-09-13 | 江苏第三代半导体研究院有限公司 | Semiconductor light-emitting structure preparation method and device based on III-group nitride quantum dots |
| CN115050860B (en) * | 2022-06-15 | 2023-09-22 | 江苏第三代半导体研究院有限公司 | Preparation method and device of semiconductor light-emitting structure based on III-nitride quantum dots |
| EP4345925A1 (en) * | 2022-09-29 | 2024-04-03 | Samsung Electronics Co., Ltd. | Light emitting device, display apparatus including the same and manufacturing method of the light emitting device |
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