CN219917199U - Semiconductor light emitting device - Google Patents
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- CN219917199U CN219917199U CN202321330710.1U CN202321330710U CN219917199U CN 219917199 U CN219917199 U CN 219917199U CN 202321330710 U CN202321330710 U CN 202321330710U CN 219917199 U CN219917199 U CN 219917199U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
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- 150000004767 nitrides Chemical class 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
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Abstract
The utility model provides a semiconductor light-emitting element, which sequentially comprises the following components from bottom to top: the multi-quantum well layer comprises a blue light quantum well layer, a red light quantum well layer and a green light quantum well layer, wherein the red light quantum well layer is positioned on one side of the green light quantum well layer close to the first type conductive layer, and the blue light quantum well layer is positioned on two sides of the red light quantum well layer and the green light quantum well layer. The multi-quantum well layer provided by the utility model is provided with the green quantum well layer, the red quantum well layer and the blue quantum well layer, and can directly generate light with three light-emitting wavelengths to form mixed white light, so that the light-emitting efficiency is higher relative to the mixed white light generated by exciting fluorescent powder, and the cost is lower relative to the white light manufactured by adopting the LED with three light colors.
Description
Technical Field
The present utility model relates to the field of semiconductor technology, and in particular, to a semiconductor light emitting device.
Background
The semiconductor light-emitting element has the advantages of energy conservation, environmental protection, small size, long service life, high light-emitting efficiency and the like, and the wavelength range of the semiconductor light-emitting element covers the ultraviolet to infrared range, so that the semiconductor light-emitting element has wide application scenes. For example, the semiconductor light-emitting element of ultraviolet band is applied in disinfection, curing and medical treatment; the application of the semiconductor light-emitting element in the infrared band in the fields of security monitoring, optocouplers, plant illumination and the like; the semiconductor light-emitting element in the visible light wave band is applied to the fields of display screens, backlight sources, street lamps, car lamps and the like. In the traditional lighting field, the semiconductor light-emitting element has completely replaced incandescent lamps and fluorescent lamps, and is the first choice of household lighting sources.
Currently, there are two methods for manufacturing a white LED (light emitting diode): the method has the problems of low conversion efficiency of fluorescent powder, poor heat dissipation, complex packaging process and the like; another is to directly use red, green and blue LEDs to make white light, which requires three LEDs to be made, and the manufacturing cost is high.
Disclosure of Invention
The present utility model is directed to a semiconductor light emitting device for directly generating blue, red and green light for synthesizing white light, and capable of improving light emitting efficiency and reducing cost.
To achieve the above and other related objects, the present utility model provides a semiconductor light emitting element comprising, in order from bottom to top: the solar cell comprises a substrate, a buffer layer, a first type conductive layer, a multiple quantum well layer and a second type conductive layer, wherein the multiple quantum well layer comprises a blue light quantum well layer, a red light quantum well layer and a green light quantum well layer, the red light quantum well layer is positioned on one side of the green light quantum well layer, which is close to the first type conductive layer, and the blue light quantum well layer is positioned on two sides of the red light quantum well layer and the green light quantum well layer.
Optionally, in the semiconductor light emitting device, the blue light quantum well layer is a periodic structure formed by alternately growing a blue light potential well layer and a barrier layer, and the total cycle number of the blue light quantum well layer is 4-10, wherein the cycle number of the blue light quantum well layer between the red light quantum well layer and the first type semiconductor layer is 1-4, the cycle number of the blue light quantum well layer between the green light quantum well layer and the second type conductive layer is 2-5, and the cycle number of the blue light quantum well layer between the red light quantum well layer and the green light quantum well layer is 0-2.
Optionally, in the semiconductor light emitting device, a peak wavelength of light emitted from the blue-light potential well layer is 440nm to 480nm.
Optionally, in the semiconductor light emitting device, the green quantum well layer is a periodic structure formed by alternately growing a green potential well layer and a barrier layer, and the number of periods of the periodic structure is 1-3.
Optionally, in the semiconductor light emitting element, a peak wavelength of light emitted from the green potential well layer is 500nm to 560nm.
Optionally, in the semiconductor light emitting device, the red light quantum well layer is a periodic structure formed by alternately growing a red light potential well layer and a barrier layer, and the cycle number of the red light quantum well layer is 1-2.
Optionally, in the semiconductor light emitting element, a peak wavelength of light emitted from the red light potential well layer is 600nm to 650nm.
Optionally, in the semiconductor light emitting device, the thickness of the blue light potential well layer is m, the thickness of the green light potential well layer is n, the thickness of the red light potential well layer is s, and s < n < m < 5nm is greater than or equal to 1 nm.
Optionally, in the semiconductor light emitting device, a thickness of the single-layer barrier layer is 8nm to 14nm.
Optionally, in the semiconductor light emitting device, the thickness of the first type conductive layer is greater than or equal to 1 μm, and the thickness of the second type conductive layer is 40 nm-100 nm 。
In the semiconductor light-emitting element provided by the utility model, the multiple quantum well layer comprises a blue light quantum well layer, a red light quantum well layer and a green light quantum well layer, the red light quantum well layer is positioned on one side of the green light quantum well layer close to the first conductive layer, and the blue light quantum well layer is positioned on two sides of the red light quantum well layer and the green light quantum well layer, namely, the multiple quantum well layer provided by the utility model has the quantum well layers with three light-emitting wavelengths, can directly generate light (red light, green light and blue light) with the three light-emitting wavelengths, has higher light-emitting efficiency relative to mixed white light generated by exciting fluorescent powder, can simplify a packaging process relative to white light manufactured by adopting three light-emitting LEDs, and has lower cost.
In addition, the utility model can change the luminous intensity of the three potential well layers by adjusting the positions, thicknesses and cycle numbers of the potential well layers (blue light potential well layer, green light potential well layer and red light potential well layer) with the three luminous wavelengths, thereby debugging the color coordinates of the mixed light.
Drawings
Fig. 1 is a schematic structural view of a semiconductor light emitting device according to an embodiment of the present utility model;
fig. 2 is a schematic structural view of a multiple quantum well layer of a semiconductor light emitting device according to an embodiment of the present utility model;
FIG. 3 is a schematic energy band diagram of a multiple quantum well layer of a semiconductor light emitting device according to an embodiment of the present utility model;
fig. 1 to 3 show:
10-substrate, 11-buffer layer, 12-first conductive layer, 13-multiple quantum well layer, 131 a-blue light potential well layer, 131 b-red light potential well layer, 131 c-green light potential well layer, 132-barrier layer, 13A 1 -a first blue light quantum well layer, 13A 2 -a second blue light quantum well layer, 13A 3 -a third blue light quantum well layer, a 13B-red light quantum well layer, a 13C-green light quantum well layer, a 14-second type conductive layer.
Detailed Description
The semiconductor light emitting device according to the present utility model will be described in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present utility model will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the utility model.
Referring to fig. 1 and 2, the present utility model provides a semiconductor light emitting device, which includes, in order from bottom to top: a substrate 10, a buffer layer 11, a first type conductive layer 12, a multiple quantum well layer 13, and a second type conductive layer 14. The multiple quantum well layer 13 includes a blue light quantum well layer, a red light quantum well layer 13B, and a green light quantum well layer 13C.
In the present embodiment, the substrate 10 is preferably a transparent insulating substrate, and more preferably a sapphire substrate, but is not limited thereto. The surface of the sapphire substrate may be an imaging structure or a polished surface, and the substrate 10 of the present embodiment is preferably a sapphire substrate with a patterning structure, so as to improve the light emitting efficiency of the semiconductor light emitting element.
The buffer layer 11 is located on the substrate 10. In this embodiment, the buffer layer 11 generally includes at least one of AlON layer (thickness 10 nm-50 nm) grown by sputtering and AlGaN layer and GaN layer (thickness not less than 1 μm) grown by MOCVD (Metal-organic chemical vapor deposition) process, but is not limited thereto. The process for preparing the buffer layer 11 may be MBE (molecular beam epitaxy), PECVD (Plasma EnhancedChemicalVaporDeposition ), or the like, in addition to a sputtering process and an MOCVD process.
The first type conductive layer 12 is located on the buffer layer 11. The first type conductive layer 12 is preferably an n-type semiconductor layer, and is mainly used for providing electrons. The material of the first type conductive layer 12 may be a nitride material, such as GaN, alGaN, inGaN, alInGaN, or a combination of at least two thereof. In this embodiment, the thickness of the first-type conductive layer 12 is preferably 1 μm or more. The first type conductive layer 12 is doped with an n-type doping element such as Si, but is not limited thereto. The doping concentration of the n-type doping element in the first type conductive layer 12 is preferably greater than 2E18cm -3 But is not limited thereto.
The first type conductive layer 12 may be epitaxially grown on the buffer layer 11 by any one of MOCVD, MBE, sputtering, PECVD, and the like.
Referring to fig. 1 and 2, the multiple quantum well layer 13 is disposed on the first conductive layer 12, and the multiple quantum well layer 13 includes a blue light quantum well layer, a red light quantum well layer 13B, and a green light quantum well layer 13C, and the blue light quantum well layer includes a first blue light quantum well layer 13A 1 Second blue light quantum well layer 13A 2 And a third blue light quantum well layer 13A 2 . The multiple quantum well layer 13 is a periodic structure formed by alternately growing potential well layers and barrier layers, and one potential well layer and one barrier layer form one quantum well layer. Specifically, the blue light quantum well layer is a periodic structure formed by alternately growing a blue light potential well layer 131a and a barrier layer 132; the red light quantum well layer 13B is a periodic structure formed by alternately growing a red light potential well layer 131B and a barrier layer 132; the green quantum well layer 13C is a periodic structure formed by alternately growing a green potential well layer 131C and a barrier layer 132. Therefore, the well layers in the present embodiment include three kinds of blue well layer 131a, red well layer 131b, and green well layer 131c, and the well layer in each period is one of the blue well layer 131a, red well layer 131b, and green well layer 131 c. In this embodiment, the potential well layer in a part of the periods is a red light potential well layer 131b, the potential well layer in a part of the periods is a green light potential well layer 131c, and the potential well layers in the rest of the periods are blue light potential well layers 131a, that is, the blue light potential well layer 131a, the red light potential well layer 131b and the green light potential well layer 131c are simultaneously provided in the multiple quantum well layer 13, so that the multiple quantum well layer 13 of the semiconductor light emitting element can generate light with three light emission wavelengths.
In this embodiment, the material of the blue-light potential well layer 131a is preferably In x Ga (1-x) N，1>x>0. And the first blue light quantum well layer 13A 1 In composition of the potential well layer of (c), the second blue light quantum well layer 13A 2 In composition of the potential well layer of (c) and the third blue light quantum well layer 13A 3 The In composition of the well layers of (c) may be the same or different. The material of the red-light potential well layer 131b is preferably In z Ga (1-z) N, the material of the green well layer 131c is preferably In y Ga (1-y) N, and 1>z>y>x>0. Referring to FIG. 3, due to z>y>x, in composition of the blue-light potential well layer 131a<In composition of the green potential well layer 131c<The In composition of the red-light potential well layer 131b is such that the forbidden bandwidth of the blue-light potential well layer 131a>Forbidden bandwidth of the green potential well layer 131c>The forbidden bandwidth of the red-light potential well layer 131b further enables the peak wavelength of the light emitted from the blue-light potential well layer 131a<The peak wavelength of the light emitted from the green potential well layer 131c<The peak wavelength of light emitted from the red well layer 131 b. In this embodiment, the peak wavelength of the light emitted from the blue-light potential well layer 131a is preferably 440nm to 480nm, and the light emitting wavelength range is blue light wavelength; the peak wavelength of the light emitted from the red-light potential well layer 131b is preferably 600nm to 650nm, and the light emitting wavelength range is the red-light wavelength; the peak wavelength of the light emitted from the green well layer 131c is preferably 500nm to 560nm, and the light emission wavelength range is the green wavelength. Therefore, the multiple quantum well layer 13 of the present embodiment has the blue light potential well layer 131a, the red light potential well layer 131b and the green light potential well layer 131c at the same time, so that the multiple quantum well layer 13 can directly generate red light, blue light and green light which can synthesize white light, short wave excitation fluorescent powder such as ultraviolet light or blue light is not required to generate mixed white light, and red light LED, blue light LED and green light LED are not required to be prepared at the same time to manufacture white light. And the present embodiment can adjust the color coordinates of the mixed light by changing the intensities of the three wavelength light emission by adjusting the positions, thicknesses and periods of the blue well layer 131a, the red well layer 131b and the green well layer 131 c. Further, the more the In composition In the InGaN material, the longer the wavelength of light emitted from the potential well layer, and thus the present embodiment can adjust the wavelength of light emitted by adjusting the In composition In the potential well layer. In other words, the specific values of x, y and z in this embodiment may be adjusted according to the wavelength requirement of the emission of the potential well layer.
Since the In content of the red-light potential well layer 131b is the largest, the In content of the green-light potential well layer 131c is inferior, the In content of the blue-light potential well layer 131a is the smallest, and the red-light potential well layer 131b is more likely to catchTo prevent holes from being completely trapped by them, and thus the blue and green well layers 131a and 131C do not emit light or emit light little because of less carriers, the present embodiment preferably places the green quantum well layer 13C having the green well layer 131C in the middle of the multiple quantum well layer 13, the red quantum well layer 13B having the red well layer 131B in the side of the green quantum well layer 13C near the first type conductive layer 12, and the blue quantum well layer having the blue well layer 131a in both sides of the red quantum well layer 13B and the red quantum well layer 13C. For example, in fig. 2, the green light quantum well layer 13C is located at an intermediate position of the multiple quantum well layer 13; the red quantum well layer 13B is located at a side of the green quantum well layer 13C close to the first type conductive layer 12, and if the red quantum well layer 13B is located at a side of the green quantum well layer 13C close to the second type conductive layer 14, light generated by the green quantum well layer 13C will be absorbed by the red quantum well layer 13B, which may result in that no light or weak light is emitted from the green quantum well layer 13C on the light emitting surface; the blue light quantum well layer comprises a first blue light quantum well layer 13A 1 Second blue light quantum well layer 13A 2 And a third blue light quantum well layer 13A 3 Wherein the first blue light quantum well layer 13A 1 Between the red light quantum well layer 13B and the first conductive layer 12, the third blue light quantum well layer 13A 3 Between the green light quantum well layer 13C and the second conductive layer 14, the second blue light quantum well layer 13A 2 Between the green light quantum well layer 13C and the red light quantum well layer 13B. Therefore, the multiple quantum well layer 13 includes, in order from bottom to top: first blue light quantum well layer 13A 1 Red light quantum well layer 13B, second blue light quantum well layer 13A 2 Green light quantum well layer 13C and third blue light quantum well layer 13A 3 . In the present embodiment, the light emission of the multiple quantum well layer 13 is mainly concentrated in the red light quantum well layer 13B, the green light quantum well layer 13C, and the third blue light quantum well layer 13A 3 。
All the periods of the green light quantum well layers 13C of this embodiment are arranged together in succession and are located in the multiple quantum well layers13, a position in the middle; all the periods of the red quantum well layer 13B are also arranged continuously and are located on the side of the green quantum well layer 13C close to the first type conductive layer 12, and the period z of the green quantum well layer 13C having the green potential well layer 131C is provided in order to further limit the capturing ability of carriers of the green potential well layer 131C and the red potential well layer 131B 5 Preferably 1 to 3, and the number z of cycles of the red quantum well layer 13B having the red potential well layer 131B 4 Preferably 1 to 2.
In this embodiment, the total period of the blue light quantum well layer is preferably 4 to 10. And the first blue light quantum well layer 13A 1 Number z of cycles of (1) 1 The second blue light quantum well layer 13A 2 Number z of cycles of (1) 2 The third blue light quantum well layer 13A 3 Number z of cycles of (1) 3 May be the same or different.
The first blue light quantum well layer 13A 1 Number z of cycles of (1) 1 Preferably 1 to 4. The first blue light quantum well layer 13A 1 Is to buffer the stress between the first type conductive layer 12 and the red light quantum well layer 13B, and at the same time, the electron distribution can be regulated. The first blue light quantum well layer 13A 1 Number z of cycles of (1) 1 Too little, electrons may overflow into the second type conductive layer 14, resulting in a decrease in holes in the multiple quantum well layer 13, and a decrease in light emission luminance; and the first blue light quantum well layer 13A 1 Number z of cycles of (1) 1 When too many, the following quantum well layers (red light quantum well layer 13B, green light quantum well layer 13C, second blue light quantum well layer 13A) 2 And a third blue light quantum well layer 13A 3 ) Insufficient electrons in the quantum well layer, resulting in reduced radiative recombination in the quantum well layer and reduced light emission luminance.
The second blue light quantum well layer 13A 2 Number z of cycles of (1) 2 Preferably 0 to 2, i.e. the second blue light quantum well layer 13A 2 May be without or with the second blue light quantum well layer 13A 2 Number z of cycles of (1) 2 1 to 2. The second blue light quantum well layer 13A 2 To adjust the positions of the red light quantum well layer 13B and the green light quantum well layer 13C, therebyThe luminous intensity of the two wavelengths is adjusted. The second blue light quantum well layer 13A 2 Number z of cycles of (1) 2 Too much results in the subsequent quantum well layers (green light quantum well layer 13C and third blue light quantum well layer 13A) 3 ) And holes reaching the red light quantum well layer 13B are also reduced, affecting the light emission intensity of the three lights.
The third blue light quantum well layer 13A 3 Number z of cycles of (1) 3 Preferably 2 to 5. The third blue light quantum well layer 13A 3 Mainly as a blue light emitting layer. The third blue light quantum well layer 13A 3 Number z of cycles of (1) 3 Too little, most of the holes and electrons enter the red light quantum well layer 13B and the green light quantum well layer 13C, resulting in low blue light emission intensity; the third blue light quantum well layer 13A 3 Number z of cycles of (1) 3 Too much, holes cannot enter or rarely enter the red light quantum well layer 13B and the green light quantum well layer 13C, resulting in low emission intensities of red light and green light.
For example, the cycle number z of the red light quantum well layer 13B 4 1, the cycle number z of the green light quantum well layer 13C 5 2, the first blue light quantum well layer 13A 1 Number z of cycles of (1) 1 2, the second blue light quantum well layer 13A 2 Number z of cycles of (1) 2 1, the third blue light quantum well layer 13A 3 Number z of cycles of (1) 3 2. For another example, the cycle number z of the red light quantum well layer 13B 4 2, the cycle number z of the green light quantum well layer 13C 5 2, the first blue light quantum well layer 13A 1 Number z of cycles of (1) 1 1, the second blue light quantum well layer 13A 2 Number z of cycles of (1) 2 2, the third blue light quantum well layer 13A 3 Number z of cycles of (1) 3 4.
In this embodiment, the thickness of the single-layer red well layer 131b is less than the thickness of the single-layer green well layer 131c is less than the thickness of the single-layer blue well layer 131a, the thin red well layer 131b and the thin green well layer 131c can further limit the carrier capturing capability of the red well layer 131b and the green well layer 131c, and the light emission intensities of blue light, red light and green light can be adjusted as a whole, so as to adjust the color coordinates of the mixed light. Further, the thickness of the blue light potential well layer 131a is m, the thickness s of the red light potential well layer 131b is n, and the thickness of the green light potential well layer 131c is 1 nm-5 nm.
In the multiple quantum well layer 13, the material of the barrier layer 132 is preferably Al j Ga (1-j) N，0≤j<0.1, but is not limited thereto. The thickness of the single layer of the barrier layer 132 is preferably 8nm to 14nm, for example, 10nm, in each period of the multiple quantum well layer 13. It is understood that the Al composition of the barrier layer 132 may be the same or different and the thickness may be the same or different in each cycle.
The present embodiment can grow the multiple quantum well layer 13 on the first type conductive layer 12 by any one of the process methods of MOCVD, MBE, sputtering, and PECVD.
The second type conductive layer 14 is located on the multiple quantum well layer 13. The second type conductive layer 14 is preferably a p-type semiconductor layer, and is mainly used for providing holes. The second type conductive layer 14 may be a nitride material, such as GaN, alGaN, inGaN, alInGaN, or a combination of at least two thereof. In this embodiment, the thickness of the second type conductive layer 14 is preferably 40nm to 100nm, for example 80nm. The second type conductive layer 14 is doped with a p-type doping element such as Mg, and the doping concentration of the p-type doping element in the second type conductive layer 14 is preferably greater than 5E18cm -3 。
The present embodiment can grow the second type conductive layer 14 on the multiple quantum well layer 13 by any one of the process methods of MOCVD, MBE, sputtering, and PECVD.
In summary, in the semiconductor light emitting element provided by the present utility model, the multiple quantum well layer includes a blue light quantum well layer, a green light quantum well layer, and a red light quantum well layer. That is, the multi-quantum well layer of the present utility model has the quantum well layers of three light emission wavelengths, and can directly generate light of three light emission wavelengths. Further, the peak wavelength of light emitted by the blue light potential well layer is 440-480 nm, which is blue light wavelength, the peak wavelength of light emitted by the red light potential well layer is 600-650 nm, which is red light wavelength, and the peak wavelength of light emitted by the green light potential well layer is 500-560 nm, which is green light wavelength, so that the utility model can directly generate red light, green light and blue light of synthetic white light, and further obtain mixed white light. Compared with the existing mixed white light generated by exciting fluorescent powder by ultraviolet or blue light, the luminous efficiency can be improved, and compared with the white light manufactured by adopting a red light LED, a green light LED and a blue light LED, the packaging process can be simplified, and the cost is lower.
In addition, the utility model can change the luminous intensity of the three potential well layers by adjusting the positions, the cycle numbers, the thicknesses and the like of the potential well layers (blue light potential well layer, green light potential well layer and red light potential well layer) with the three luminous wavelengths, thereby debugging the color coordinates of the mixed light.
In addition, it will be understood that while the utility model has been described in terms of preferred embodiments, the above embodiments are not intended to limit the utility model. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art without departing from the scope of the technology, or the technology can be modified to be equivalent. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present utility model still fall within the scope of the technical solution of the present utility model.
It is also to be understood that this utility model is not limited to the particular methodology, compounds, materials, manufacturing techniques, uses, and applications described herein, as such may vary. It should also be understood that the terminology described herein is for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present utility model. It must be noted that, as used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a step" or "an apparatus" means a reference to one or more steps or apparatuses, and may include sub-steps as well as sub-apparatuses. All conjunctions used should be understood in the broadest sense. Thus, the word "or" should be understood as having the definition of a logical "or" rather than a logical exclusive or "unless the context clearly indicates the contrary. Structures described herein will be understood to also refer to the functional equivalents of such structures. Language that may be construed as approximate should be construed unless the context clearly indicates the contrary.
Claims (10)
1. A semiconductor light emitting element, comprising, in order from bottom to top: the solar cell comprises a substrate, a buffer layer, a first type conductive layer, a multiple quantum well layer and a second type conductive layer, wherein the multiple quantum well layer comprises a blue light quantum well layer, a red light quantum well layer and a green light quantum well layer, the red light quantum well layer is positioned on one side of the green light quantum well layer, which is close to the first type conductive layer, and the blue light quantum well layer is positioned on two sides of the red light quantum well layer and the green light quantum well layer.
2. The semiconductor light-emitting device according to claim 1, wherein the blue light quantum well layer has a periodic structure in which blue light potential well layers and barrier layers are alternately grown, and wherein the total number of cycles of the blue light quantum well layer is 4 to 10, wherein the number of cycles of the blue light quantum well layer between the red light quantum well layer and the first type semiconductor layer is 1 to 4, the number of cycles of the blue light quantum well layer between the green light quantum well layer and the second type conductive layer is 2 to 5, and the number of cycles of the blue light quantum well layer between the red light quantum well layer and the green light quantum well layer is 0 to 2.
3. The semiconductor light-emitting element according to claim 2, wherein a peak wavelength of light emitted from the blue-light potential well layer is 440nm to 480nm.
4. The semiconductor light-emitting device according to claim 2, wherein the green quantum well layer has a periodic structure in which green potential well layers and barrier layers are alternately grown, and the number of periods is 1 to 3.
5. The semiconductor light-emitting element according to claim 4, wherein a peak wavelength of light emitted from the green potential well layer is 500nm to 560nm.
6. The semiconductor light-emitting device according to claim 4, wherein the red quantum well layer has a periodic structure in which a red potential well layer and a barrier layer are alternately grown, and the number of periods is 1 to 2.
7. The semiconductor light-emitting element according to claim 6, wherein a peak wavelength of light emitted from the red-light potential well layer is 600nm to 650nm.
8. The semiconductor light-emitting device according to claim 6, wherein a thickness of the single blue well layer is m, a thickness of the single green well layer is n, a thickness of the single red well layer is s, and s is 1nm or less and n is < m or less than 5nm.
9. The semiconductor light-emitting element according to claim 2, 4, or 6, wherein a thickness of the barrier layer is 8nm to 14nm.
10. The semiconductor light-emitting device according to claim 1, wherein a thickness of the first conductive layer is not less than 1 μm, and a thickness of the second conductive layer is 40nm to 100nm.
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