CN109913814A - 一种氧化铜/硒复合材料薄膜 - Google Patents
一种氧化铜/硒复合材料薄膜 Download PDFInfo
- Publication number
- CN109913814A CN109913814A CN201910244517.8A CN201910244517A CN109913814A CN 109913814 A CN109913814 A CN 109913814A CN 201910244517 A CN201910244517 A CN 201910244517A CN 109913814 A CN109913814 A CN 109913814A
- Authority
- CN
- China
- Prior art keywords
- material film
- copper oxide
- cuo
- composite material
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02403—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开了一种氧化铜/硒复合材料薄膜,将低熔点(为221℃)、强光敏性的Se引入CuO,从而得到晶性良好,光、电及光电性能优异的薄膜材料。本发明将Se引入CuO,并通过低温退火使Se熔化,利用熔化的Se对CuO的浸润来消除或减少CuO膜中的空洞和悬挂键等缺陷,从而提高薄膜的晶性、光、电及光电性能,克服了CuO结晶性差、熔点高且高温分解的缺点,在太阳能电池领域具有良好的应用前景。
Description
技术领域
本发明属于半导体材料技术领域,具体涉及一种新型的半导体氧化铜/硒(CuO/Se)复合材料薄膜。
背景技术
氧化铜(CuO)是一种重要的p型半导体材料,其光学禁带宽度约为1.4eV。在地球上拥有大量的铜资源,因而CuO价格低廉。CuO是一种具有广泛用途的材料,可用在超导、磁性、催化、气敏、储能和太阳能电池等方面。由于CuO在其熔点附近(1026℃)会分解,因此不能用真空热蒸发制备和用高温退火的方法提高其结晶性。目前CuO薄膜的制备主要用磁控溅射、电化学沉积、化学溶液旋涂等方法。用这些方法制备的CuO薄膜结晶性差,缺陷多,导致载流子复合严重,器件性能差。
发明内容
为了解决目前现有技术制备的CuO薄膜结晶性差的问题,本发明提出将低熔点(为221℃)、强光敏性的Se引入CuO,制备一种氧化铜/硒复合材料薄膜,从而提高薄膜的结晶性和光、电及光电性能。
解决上述问题所采用的氧化铜/硒复合材料薄膜为CuO和Se的复合物薄膜,且CuO和Se的复合物中存在中间相CuSe2和CuSe中任意一种或两种;该薄膜中Cu元素的原子百分含量为10%~60%,O元素的原子百分含量与Cu元素相同,Se元素的原子百分含量为10%~60%。
作为优选,上述氧化铜/硒复合材料薄膜中,Cu元素的原子百分含量为20%~40%,O元素的原子百分含量与Cu元素相同,Se元素的原子百分含量为20%~50%。
作为进一步优选,本发明氧化铜/硒复合材料薄膜中还掺杂有Si、Fe、Ge中任意一种,其中掺杂的Si或Fe或Ge元素的原子百分含量为3%~10%。
本发明氧化铜/硒复合材料薄膜采用磁控溅射法制备,具体制备方法为:采用CuO和Se共溅射的方式在衬底上沉积一层CuO/Se复合材料薄膜,然后在空气或氮气中300~400℃退火1~3分钟,得到氧化铜/硒复合材料薄膜;或先用磁控溅射法在玻璃衬底上沉积一层CuO膜,再在CuO膜上热蒸发沉积一层Se膜,接着在空气或氮气中300~400℃退火10~60分钟,得到氧化铜/硒复合材料薄膜。
本发明氧化铜/硒复合材料薄膜还可采用化学溶液法制备,具体制备方法为:将CuO粉末和Se粉末按摩尔比为1:2~3研磨混合均匀后加入二甲亚砜中,在50~70℃下搅拌6~10小时,所得反应液旋涂于衬底上,然后在150~200℃下退火5~10分钟,制备成氧化铜/硒复合材料薄膜。
上述的衬底为单晶硅片、普通玻璃、石英玻璃、氧化铟锡导电玻璃、掺氟氧化锡导电玻璃中的任意一种。
本发明的有益效果如下:
本发明将低熔点(为221℃)、强光敏性的Se引入CuO,并通过低温退火(Se的熔点附近),使Se熔化,利用熔化的Se对CuO的浸润来消除或减少CuO膜中的空洞和悬挂键等缺陷,从而得到一种结晶性良好的CuO/Se复合材料薄膜。该复合材料薄膜结合了CuO对光强吸收、带隙合适,Se的熔点低、适合低温制备和处理且具有强的光敏性的优点,克服了CuO熔点高且高温分解,Se带隙过大(约1.8eV)的缺点,是一种结晶性良好,光、电及光电性能优异的薄膜材料,在光电子器件及太阳能电池领域具有良好的应用前景。
附图说明
图1是实施例1所制备的CuO/Se复合材料薄膜的结构表征X射线衍射图。
图2是实施例1所制备的CuO/Se复合材料薄膜的扫描电镜图。
图3是实施例1所制备的CuO/Se复合材料薄膜的吸收光谱图。
图4是实施例1所制备的CuO/Se复合材料薄膜的光电流随载流子扩散距离的衰减。
具体实施方式
下面结合附图和实施例对本发明进一步详细说明,但本发明的保护范围不仅限于这些实施例。
实施例1
将普通玻璃衬底依次在丙酮、乙醇、去离子水中超声清洗10分钟,用氮气吹干,然后将玻璃衬底置于磁控溅射沉积室内,用机械泵和分子泵将沉积室抽真空至2×10-4Pa,调节玻璃衬底和靶材的距离为6cm,然后将玻璃衬底加热至200℃,接着打开氩气通气阀,向沉积室通入氩气,并打开质量流量计,控制氩气流量为30sccm,调节沉积室压强至0.6Pa。采用CuO和Se共溅射的方式,溅射功率为60W,并同时旋转衬底,在玻璃衬底上沉积CuO/Se复合材料薄膜,溅射时间为30分钟,薄膜厚度约4μm。沉积结束后,自然冷却至室温,在空气中350℃退火1分钟,得到CuO/Se复合材料薄膜。
采用霍尔效应仪测量得出所制备的CuO/Se复合材料薄膜为p型导电性,载流子浓度为2.05×1019cm-3,迁移率为98cm2V-1s-1,电阻率为3.12×10-3Ωcm。图1的X射线衍射测量表明,CuO/Se复合材料薄膜中CuO处于非晶态,一部分Se处于纳晶态(用Debye-Scherrer公式估算平均晶粒尺寸为48nm),并出现CuSe2纳晶(平均晶粒尺寸为44nm),说明该薄膜是一种非晶/纳晶复合薄膜,而没有退火的膜中CuO和Se都没有结晶。由能量色散X射线谱(EDX)测量出CuO/Se复合材料薄膜中Cu、O和Se的原子百分含量分别约为30%、32%和38%。图2是CuO/Se复合材料薄膜的表面扫描电子显微镜(SEM)照片,可以看出,该薄膜表面由10~30nm的颗粒组成。用紫外-可见-近红外分光光度计测量CuO/Se复合材料膜的吸收光谱,结果见图3。由图3可以看出,所制备的CuO/Se复合材料薄膜在整个太阳光谱波段(250~2500nm)对光都有强的吸收(平均吸收率接近80%)。用光电流扫描法直接测量CuO/Se复合材料薄膜的光电流随载流子扩散距离的衰减,结果见图4。由指数衰减方程I=I0exp(-L/LD),得出CuO/Se复合材料薄膜的光生载流子扩散长度LD=3.147mm。这比最好的p型单晶硅的载流子扩散长度(1.95mm)还长许多!远远大于目前研究热点的有机-无机杂化钙钛矿材料的载流子扩散长度(如单晶CH3NH3PbI3为0.32mm,多晶薄膜为0.014mm)。这些特性说明本发明CuO/Se复合材料薄膜是一种性能非常优异的光电材料。
实施例2
本实施例中,采用CuO和Se、Si共溅射的方式,按照实施例1的条件制备Cu元素和O元素的原子百分含量均为30%,Se元素的原子百分含量为36%,Si元素的原子百分含量为4%的CuO/Se复合材料薄膜。所制备的CuO/Se复合材料薄膜仍在整个太阳光谱波段(250~2500nm)对光都有强的吸收(平均吸收率接近80%)。用光电流扫描法直接测量CuO/Se复合材料薄膜的光生载流子扩散长度LD=3.124mm。
实施例3
先用磁控溅射法,按照实施例1的条件在玻璃衬底上沉积一层CuO膜,再在CuO膜上用常规的热蒸发沉积一层Se膜,接着在空气中300℃退火30分钟,制备成CuO/Se复合材料薄膜。
实施例4
将0.4g(5mmol)CuO粉末和0.34g(10mmol)Se粉末研磨并混合均匀后,加入3mLDMSO中,在60℃下搅拌8小时,所得反应液以1000转/分的转速旋涂于玻璃衬底上,然后在150℃下退火10分钟,制备成CuO/Se复合材料薄膜。
Claims (7)
1.一种氧化铜/硒复合材料薄膜,其特征在于:所述氧化铜/硒复合材料薄膜为CuO和Se的复合物薄膜,且CuO和Se的复合物中存在中间相CuSe2和CuSe中任意一种或两种;该薄膜中Cu元素的原子百分含量为10%~60%,O元素的原子百分含量与Cu元素相同,Se元素的原子百分含量为10%~60%。
2.根据权利要求1所述的氧化铜/硒复合材料薄膜,其特征在于:所述氧化铜/硒复合材料薄膜中Cu元素的原子百分含量为20%~40%,O元素的原子百分含量与Cu元素相同,Se元素的原子百分含量为20%~50%。
3.根据权利要求1或2所述的氧化铜/硒复合材料薄膜,其特征在于:所述氧化铜/硒复合材料薄膜中还掺杂有Si、Fe、Ge中任意一种。
4.根据权利要求3所述的氧化铜/硒复合材料薄膜,其特征在于:所述氧化铜/硒复合材料薄膜中掺杂的Si或Fe或Ge元素的原子百分含量为3%~10%。
5.根据权利要求1所述的氧化铜/硒复合材料薄膜,其特征在于:所述氧化铜/硒复合材料薄膜采用磁控溅射法制备而成,具体制备方法为:采用CuO和Se共溅射的方式在衬底上沉积一层CuO/Se复合材料薄膜,然后在空气或氮气中300~400℃退火1~3分钟,得到氧化铜/硒复合材料薄膜;
或先用磁控溅射法在玻璃衬底上沉积一层CuO膜,再在CuO膜上热蒸发沉积一层Se膜,接着在空气或氮气中300~400℃退火10~60分钟,得到氧化铜/硒复合材料薄膜。
6.根据权利要求1所述的氧化铜/硒复合材料薄膜,其特征在于:所述氧化铜/硒复合材料薄膜采用化学溶液法制备而成,具体制备方法为:将CuO粉末和Se粉末按摩尔比为1:2~3研磨混合均匀后加入二甲亚砜中,在50~70℃下搅拌6~10小时,所得反应液旋涂于衬底上,然后在150~200℃下退火5~10分钟,制备成氧化铜/硒复合材料薄膜。
7.根据权利要求5或6所述的氧化铜/硒复合材料薄膜,其特征在于:所述的衬底为单晶硅片、普通玻璃、石英玻璃、氧化铟锡导电玻璃、掺氟氧化锡导电玻璃中的任意一种。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910244517.8A CN109913814B (zh) | 2019-03-28 | 2019-03-28 | 一种氧化铜/硒复合材料薄膜 |
US16/729,343 US11008648B2 (en) | 2019-03-28 | 2019-12-28 | CuO/Se composite film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910244517.8A CN109913814B (zh) | 2019-03-28 | 2019-03-28 | 一种氧化铜/硒复合材料薄膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109913814A true CN109913814A (zh) | 2019-06-21 |
CN109913814B CN109913814B (zh) | 2020-11-17 |
Family
ID=66967509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910244517.8A Active CN109913814B (zh) | 2019-03-28 | 2019-03-28 | 一种氧化铜/硒复合材料薄膜 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11008648B2 (zh) |
CN (1) | CN109913814B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113549453A (zh) * | 2021-07-20 | 2021-10-26 | 陕西师范大学 | 一种具有高光电性能的CuO基复合材料 |
CN113555459A (zh) * | 2021-07-20 | 2021-10-26 | 陕西师范大学 | 具有强发光特性的二硫化硒掺杂氧化铜 |
CN113698932A (zh) * | 2021-09-06 | 2021-11-26 | 陕西师范大学 | 一种强红外发光的Cu2O/SnO半导体复合材料 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101058484A (zh) * | 2007-03-28 | 2007-10-24 | 杭州电子科技大学 | 一种p型掺氮的氧化亚铜薄膜材料及其制造方法 |
US20120132281A1 (en) * | 2010-11-26 | 2012-05-31 | Nexpower Technology Corporation | Thin-film solar cell and manufacturing method thereof |
JP5713743B2 (ja) * | 2011-03-22 | 2015-05-07 | Dowaエレクトロニクス株式会社 | セレン化銅粒子粉末およびその製造方法 |
CN105009304A (zh) * | 2013-03-12 | 2015-10-28 | 韩国能源研究技术研究所 | 具有背面缓冲层的太阳能电池及其制造方法 |
CN105112869A (zh) * | 2015-08-31 | 2015-12-02 | 哈尔滨工业大学 | 一种钇掺杂氧化铜红外透明导电薄膜的制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009513834A (ja) * | 2005-10-31 | 2009-04-02 | ユーシーエル ビジネス パブリック リミテッド カンパニー | ナノ粒子およびナノコンポジット薄膜 |
US8053861B2 (en) * | 2009-01-26 | 2011-11-08 | Novellus Systems, Inc. | Diffusion barrier layers |
-
2019
- 2019-03-28 CN CN201910244517.8A patent/CN109913814B/zh active Active
- 2019-12-28 US US16/729,343 patent/US11008648B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101058484A (zh) * | 2007-03-28 | 2007-10-24 | 杭州电子科技大学 | 一种p型掺氮的氧化亚铜薄膜材料及其制造方法 |
US20120132281A1 (en) * | 2010-11-26 | 2012-05-31 | Nexpower Technology Corporation | Thin-film solar cell and manufacturing method thereof |
JP5713743B2 (ja) * | 2011-03-22 | 2015-05-07 | Dowaエレクトロニクス株式会社 | セレン化銅粒子粉末およびその製造方法 |
CN105009304A (zh) * | 2013-03-12 | 2015-10-28 | 韩国能源研究技术研究所 | 具有背面缓冲层的太阳能电池及其制造方法 |
CN105112869A (zh) * | 2015-08-31 | 2015-12-02 | 哈尔滨工业大学 | 一种钇掺杂氧化铜红外透明导电薄膜的制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113549453A (zh) * | 2021-07-20 | 2021-10-26 | 陕西师范大学 | 一种具有高光电性能的CuO基复合材料 |
CN113555459A (zh) * | 2021-07-20 | 2021-10-26 | 陕西师范大学 | 具有强发光特性的二硫化硒掺杂氧化铜 |
CN113555459B (zh) * | 2021-07-20 | 2022-08-30 | 陕西师范大学 | 具有强发光特性的二硫化硒掺杂氧化铜 |
CN113698932A (zh) * | 2021-09-06 | 2021-11-26 | 陕西师范大学 | 一种强红外发光的Cu2O/SnO半导体复合材料 |
Also Published As
Publication number | Publication date |
---|---|
CN109913814B (zh) | 2020-11-17 |
US20200308691A1 (en) | 2020-10-01 |
US11008648B2 (en) | 2021-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Katagiri et al. | Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E B evaporated precursors | |
Wu | High-efficiency polycrystalline CdTe thin-film solar cells | |
Zhao et al. | In situ growth of SnS absorbing layer by reactive sputtering for thin film solar cells | |
CN109913814A (zh) | 一种氧化铜/硒复合材料薄膜 | |
JPH04233772A (ja) | 黄銅鉱太陽電池の製造方法 | |
AU598996B2 (en) | Functional znse:h deposited films | |
Liu et al. | Enhanced open circuit voltage of Sb2Se3/CdS solar cells by annealing Se-rich amorphous Sb2Se3 films prepared via sputtering process | |
TW201123465A (en) | Photoelectric conversion device, method for producing the same, and solar battery | |
Chen et al. | Doctor-bladed Cu2ZnSnS4 light absorption layer for low-cost solar cell application | |
Kim et al. | Narrow-bandgap Cu2Sn1− xGexSe3 thin film solar cells | |
CN108346712B (zh) | 一种硅掺杂氮化硼/石墨烯的pn结型紫外探测器制备方法 | |
Zhao et al. | Fabrication and characterization of Cu2ZnSnS4 thin films by sputtering a single target at different temperature | |
Chu et al. | Semi-transparent thin film solar cells by a solution process | |
Yang et al. | Preparation and characterization of pulsed laser deposited CdSe window layer for Sb 2 Se 3 thin film solar cell | |
Li et al. | Cu2ZnSnS4 solar cells prepared by sulfurization of sputtered ZnS/Sn/CuS precursors | |
Guang-Pu et al. | Investigation on SnS film by RF sputtering for photovoltaic application | |
Tanaka et al. | Preparation of Cu (In, Ga) 2 Se 3.5 thin films by radio frequency sputtering from stoichiometric Cu (In, Ga) Se 2 and Na 2 Se mixture target | |
Duenow et al. | Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices | |
CN107988629A (zh) | 一种低电阻率p型氧化亚铜外延薄膜的制备方法 | |
CN109841697B (zh) | 一种基于CuO/Se复合材料薄膜的太阳能电池 | |
Di Mare et al. | Analysis of SnS growth and post deposition treatment by congruent physical vapor deposition | |
Zhu et al. | New Route for Fabrication of High-Quality Zn (S, O) Buffer Layer at High Deposition Temperature on Cu (In, Ga) Se $ _2 $ Solar Cells | |
Wu et al. | Effect of pre-annealing of Mo foil substrate on CZTSSe thin films and Mo (S, Se) 2 interface layer | |
Le | Structural, Optical, and Electrical Characteristics of Cu3N with Respect to Substrate Temperature and N2 Concentration in Mixed Sputtering Gas | |
Zhang et al. | Effects of annealing on Cu 2 ZnSnS 4 thin films prepared on Mo substrate and the fabrication of solar cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |