CN109904280A - A kind of preparation method of solar battery - Google Patents
A kind of preparation method of solar battery Download PDFInfo
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- CN109904280A CN109904280A CN201910131254.XA CN201910131254A CN109904280A CN 109904280 A CN109904280 A CN 109904280A CN 201910131254 A CN201910131254 A CN 201910131254A CN 109904280 A CN109904280 A CN 109904280A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a kind of preparation methods of solar battery, first silicon wafer is cleaned, it is polished, alkali making herbs into wool processing, boron DIFFUSION TREATMENT, silicon chip surface is set to form oxide layer, ion implanting, annealing and deposition phosphorus source, laser doping processing and subsequent processing are successively being carried out to it, complete the preparation of solar battery.Present invention discloses a kind of preparation method of solar battery, present invention process preparation is simple, and yield is high, damage is small；Selective emitter battery sheet resistance uniformity made from this method is good, advantage of lower cost.
Description
Technical field
A kind of a kind of preparation method of battery of the present invention, and in particular to preparation method of solar battery.
Background technique
Solar energy is a kind of reproducible cleaning resource, and solar battery can be carried out photoelectric conversion using the sun, to be
User provides electric energy.The base material silicon substrate of polysilicon solar cell is high to the reflectivity of sunlight, can not effectively inhale
Sunlight is received, causes the photoelectric conversion efficiency of solar battery low.In the existing technology for preparing polysilicon solar cell, lead to
It crosses the silicon substrate surface in solar battery and deposits single-layer silicon nitride silicon antireflective coating, reduce the reflectivity to sunlight, improve too
Absorption of the positive energy battery to solar energy, and then improve the photoelectric conversion efficiency of solar battery.
However, existing complex process, yield rate is low, is imitated using the photoelectric conversion of the solar battery of prior art preparation
Rate is poor.
Summary of the invention
Goal of the invention: the purpose of the present invention is to solve deficiency in the prior art, a kind of solar battery is provided
Preparation method solves the above problems.
Technical solution: a kind of preparation method of solar battery of the present invention, described steps are as follows:
(1) silicon wafer is cleaned, first uses NH4OH+H2O2After reagent impregnates silicon wafer 6-7 minute, takes out and dry, then by silicon wafer
Using HCl+H2O2+ HF reagent impregnates sample 8-10min, dries after taking-up；
(2) by the silicon wafer after cleaning into polishing, alkali making herbs into wool handle, the two-sided formation of silication fall into light texture, to silicon wafer front surface into
The diffusion of row boron, and silicon wafer is performed etching using etching processing, and remove the Pyrex on surface, the boron diffusion uses tribromo
Change boron liquid source diffusion method, oxygen deposition Boron tribromide 15-35 minutes first led at 900-1200 DEG C, later not TongYuan in oxygen atmosphere
Then lower propulsion 8-30 minutes cools to 700-800 DEG C and aoxidizes at least 25-32 minutes, grow oxide layer in the shady face of silicon wafer；
The thickness of the oxide layer is at least 25 nanometers；
(3) ion implanting processing is carried out to silicon wafer back surface boron diffused region, the foreign ion of ion implanting is P ion, the P
The concentration of ion is 2 × 1015cm2~4 × 1015cm2；
(4) silicon wafer back surface is successively made annealing treatment and is deposited phosphorus source processing, the annealing temperature is 600 DEG C~1000
DEG C, phosphorus source processing phosphorus source uses concentration for 0.8~7%；
(5) laser doping is carried out to silicon wafer back surface, forms selective emitter, and remove the two-sided phosphorosilicate glass of silicon wafer；
(6) subsequent processing is carried out to the silicon wafer for forming selective emitter, to complete the preparation of solar battery.
Preferably, the silicon wafer of described pair of formation selective emitter carries out subsequent processing, to complete the system of solar battery
It is standby, comprising: to remove the two-sided phosphorosilicate glass of the silicon wafer；It is sequentially depositing on the silicon wafer for eliminating phosphorosilicate glass is two-sided blunt
Change film, antireflective coating；Printing and sintering processes are carried out to the silicon wafer that deposited passivating film and antireflective coating, to complete too
The preparation of positive energy battery.
Preferably, the passivating film is pellumina or silicon oxide film, and the antireflective coating is silicon nitride film.
Preferably, the atmosphere of the deposition phosphorus source is the nitrogen atmosphere and oxygen atmosphere for carrying phosphorus oxychloride, described
Nitrogen flow in nitrogen atmosphere is 500sccm~2000sccm, the oxygen flow in the oxygen atmosphere be 500sccm~
2000sccm。
The utility model has the advantages that present invention process preparation is simple, yield is high, damage is small；The electricity of selective emitter made from this method
Pond sheet resistance uniformity is good, advantage of lower cost.
Specific embodiment
A kind of preparation method of solar battery, described steps are as follows:
(1) silicon wafer is cleaned, first uses NH4OH+H2O2After reagent impregnates silicon wafer 6-7 minute, takes out and dry, then by silicon wafer
Using HCl+H2O2+ HF reagent impregnates sample 8-10min, dries after taking-up；
(2) by the silicon wafer after cleaning into polishing, alkali making herbs into wool handle, the two-sided formation of silication fall into light texture, to silicon wafer front surface into
The diffusion of row boron, and silicon wafer is performed etching using etching processing, and remove the Pyrex on surface, the boron diffusion uses tribromo
Change boron liquid source diffusion method, oxygen deposition Boron tribromide 15-35 minutes first led at 900-1200 DEG C, later not TongYuan in oxygen atmosphere
Then lower propulsion 8-30 minutes cools to 700-800 DEG C and aoxidizes at least 25-32 minutes, grow oxide layer in the shady face of silicon wafer；
The thickness of the oxide layer is at least 25 nanometers；
(3) ion implanting processing is carried out to silicon wafer back surface boron diffused region, the foreign ion of ion implanting is P ion, the P
The concentration of ion is 2 × 1015cm2~4 × 1015cm2；
(4) silicon wafer back surface is successively made annealing treatment and is deposited phosphorus source processing, the annealing temperature is 600 DEG C~1000
DEG C, phosphorus source processing phosphorus source uses concentration for 0.8~7%；
(5) laser doping is carried out to silicon wafer back surface, forms selective emitter, and remove the two-sided phosphorosilicate glass of silicon wafer；
(6) subsequent processing is carried out to the silicon wafer for forming selective emitter, to complete the preparation of solar battery.
In this example, the silicon wafer of described pair of formation selective emitter carries out subsequent processing, to complete solar battery
Preparation, comprising: remove the two-sided phosphorosilicate glass of the silicon wafer；It is sequentially depositing on the silicon wafer for eliminating phosphorosilicate glass is two-sided
Passivating film, antireflective coating；Printing and sintering processes are carried out to the silicon wafer that deposited passivating film and antireflective coating, to complete
The preparation of solar battery.
In this example, the passivating film is pellumina or silicon oxide film, and the antireflective coating is silicon nitride film.
In this example, the atmosphere of the deposition phosphorus source is the nitrogen atmosphere and oxygen atmosphere for carrying phosphorus oxychloride, institute
Stating nitrogen flow in nitrogen atmosphere is 500sccm~2000sccm, the oxygen flow in the oxygen atmosphere be 500sccm~
2000sccm。
Present invention process preparation is simple, and yield is high, damage is small；In addition, selective emitter battery side made from this method
It is good to hinder uniformity, advantage of lower cost.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
For the equivalent embodiment of equivalent variations, but anything that does not depart from the technical scheme of the invention content, according to the technical essence of the invention
Any simple modification, equivalent change and modification to the above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (4)
1. a kind of preparation method of solar battery, it is characterised in that: described steps are as follows:
(1) silicon wafer is cleaned, first uses NH4OH+H2O2After reagent impregnates silicon wafer 6-7 minute, takes out and dry, then by silicon wafer
Using HCl+H2O2+ HF reagent impregnates sample 8-10min, dries after taking-up；
(2) by the silicon wafer after cleaning into polishing, alkali making herbs into wool handle, the two-sided formation of silication fall into light texture, to silicon wafer front surface into
The diffusion of row boron, and silicon wafer is performed etching using etching processing, and remove the Pyrex on surface, the boron diffusion uses tribromo
Change boron liquid source diffusion method, oxygen deposition Boron tribromide 15-35 minutes first led at 900-1200 DEG C, later not TongYuan in oxygen atmosphere
Then lower propulsion 8-30 minutes cools to 700-800 DEG C and aoxidizes at least 25-32 minutes, grow oxide layer in the shady face of silicon wafer；
The thickness of the oxide layer is at least 25 nanometers；
(3) ion implanting processing is carried out to silicon wafer back surface boron diffused region, the foreign ion of ion implanting is P ion, the P
The concentration of ion is 2 × 1015cm2~4 × 1015cm2；
(4) silicon wafer back surface is successively made annealing treatment and is deposited phosphorus source processing, the annealing temperature is 600 DEG C~1000
DEG C, phosphorus source processing phosphorus source uses concentration for 0.8~7%；
(5) laser doping is carried out to silicon wafer back surface, forms selective emitter, and remove the two-sided phosphorosilicate glass of silicon wafer；
(6) subsequent processing is carried out to the silicon wafer for forming selective emitter, to complete the preparation of solar battery.
2. a kind of preparation method of solar battery according to claim 1, it is characterised in that: described pair of formation is selectively sent out
The silicon wafer of emitter-base bandgap grading carries out subsequent processing, to complete the preparation of solar battery, comprising: remove the two-sided phosphorus silicon glass of the silicon wafer
Glass；Passivating film, antireflective coating are sequentially depositing on the silicon wafer for eliminating phosphorosilicate glass is two-sided；It deposited passivating film to described
Printing and sintering processes are carried out with the silicon wafer of antireflective coating, to complete the preparation of solar battery.
3. a kind of preparation method of solar battery according to claim 1, it is characterised in that: the passivating film is aluminium oxide
Film or silicon oxide film, the antireflective coating are silicon nitride film.
4. a kind of preparation method of solar battery according to claim 1, it is characterised in that: the gas of the deposition phosphorus source
Atmosphere is the nitrogen atmosphere and oxygen atmosphere for carrying phosphorus oxychloride, the nitrogen flow in the nitrogen atmosphere be 500sccm~
2000sccm, the oxygen flow in the oxygen atmosphere are 500sccm~2000sccm.
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| CN201910131254.XA CN109904280A (en) | 2019-02-22 | 2019-02-22 | A kind of preparation method of solar battery |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904164A (en) * | 2014-04-15 | 2014-07-02 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for N-shaped back-junction solar cell |
| US20150357499A1 (en) * | 2013-01-11 | 2015-12-10 | Stichting Energieonderzoek Centrum Nederland | Method of providing a boron doped region in a substrate and a solar cell using such a substrate |
| CN107240621A (en) * | 2017-06-02 | 2017-10-10 | 泰州中来光电科技有限公司 | A kind of method for making selective doping structure |
| CN107731965A (en) * | 2017-11-22 | 2018-02-23 | 奕铭（大连）科技发展有限公司 | A kind of preparation method of solar cell |
| CN108258082A (en) * | 2018-01-10 | 2018-07-06 | 张家港协鑫集成科技有限公司 | The preparation method of solar cell |
-
2019
- 2019-02-22 CN CN201910131254.XA patent/CN109904280A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150357499A1 (en) * | 2013-01-11 | 2015-12-10 | Stichting Energieonderzoek Centrum Nederland | Method of providing a boron doped region in a substrate and a solar cell using such a substrate |
| CN103904164A (en) * | 2014-04-15 | 2014-07-02 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for N-shaped back-junction solar cell |
| CN107240621A (en) * | 2017-06-02 | 2017-10-10 | 泰州中来光电科技有限公司 | A kind of method for making selective doping structure |
| CN107731965A (en) * | 2017-11-22 | 2018-02-23 | 奕铭（大连）科技发展有限公司 | A kind of preparation method of solar cell |
| CN108258082A (en) * | 2018-01-10 | 2018-07-06 | 张家港协鑫集成科技有限公司 | The preparation method of solar cell |
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Application publication date: 20190618 |