CN109904135A - A kind of encapsulating structure of silicon carbide device - Google Patents
A kind of encapsulating structure of silicon carbide device Download PDFInfo
- Publication number
- CN109904135A CN109904135A CN201910150217.3A CN201910150217A CN109904135A CN 109904135 A CN109904135 A CN 109904135A CN 201910150217 A CN201910150217 A CN 201910150217A CN 109904135 A CN109904135 A CN 109904135A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- carbide device
- copper sheet
- encapsulating structure
- layer material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 36
- 229910052802 copper Inorganic materials 0.000 claims abstract description 36
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 238000005253 cladding Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 37
- 238000003466 welding Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 7
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical group [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention discloses a kind of encapsulating structure of silicon carbide device, and including being disposed with the mold of the cooling fin of silicon carbide device, cladding silicon carbide device and cooling fin thereon and including the lead frame of pin, silicon carbide device is connect by copper sheet with lead frame.
Description
Technical field
The present invention relates to semiconductor device packaging technique fields.More particularly, to a kind of encapsulation knot of silicon carbide device
Structure.
Background technique
Carbofrax material has that forbidden bandwidth is wide, thermal conductivity is high, saturation drift velocity is big and critical breakdown electric field is high etc. solely
Special advantage, because of excellent physically and electrically characteristic, carbofrax material becomes production high power, high-frequency, high temperature resistant, anti-radiation
The ideal semiconductor material of device.It is the mostly important development of power electronic technique with power electronic devices prepared by SiC material
Direction, it is with important application prospects in military and civil field.
However, same, because of it, physically and electrically characteristic, silicon carbide power device are generally operational in high current high power item
Under part, a limitation realizes that the principal element of silicon carbide and this potential of other semiconductor material with wide forbidden band is that electric current can be improved
The occasion of demand high current and high-pressure work in the application of the encapsulating structure of transport capability, especially those energy conversions.
Traditional discrete power device packaging technique usually uses lead or Pb-free solder alloy that one end face of device is pasted
It closes on heat sink substrate, end face in addition is bonded together with aluminum steel or gold thread.Because of the advantage of simple process and low cost.But
Since used bond wire line (aluminum steel or gold thread) is very thin (typical diameter is 2-5mils), referring to Fig.1 shown in it is existing
The encapsulating structure of technology, this encapsulation technology are limited in device under rather low electric current to work, in low frequency power converter, and
Perhaps, the current handling capability of system can be improved but in high-energy density and high performance power in the device for joining these packing forms
In electronic system, due to inevitably big spurious impedance, this method is often infeasible.
Accordingly, it is desirable to provide a kind of encapsulating structure of silicon carbide device, can effectively promote electric current by the encapsulating structure
Transmittability improves product whole efficiency.
Summary of the invention
The purpose of the present invention is to provide a kind of encapsulating structures of silicon carbide device.
In order to achieve the above objectives, the present invention adopts the following technical solutions:
A kind of encapsulating structure of silicon carbide device, cooling fin, cladding silicon carbide including being disposed with silicon carbide device thereon
The mold of device and cooling fin and lead frame including pin, silicon carbide device are connect by copper sheet with lead frame.
Preferably, silicon carbide device is bonded by copper sheet and is connect with nead frame.
Preferably, copper sheet is formed by corrosion or Sheet Metal Forming Technology.
Preferably, the shape of copper sheet is according to the window size of silicon carbide device, the thickness of silicon carbide device, silicon carbide device
The size of the welding section of the thickness and pin of welding layer material between copper sheet is set.
Preferably, the width and thickness of copper sheet is set according to the load current value of silicon carbide device.
Preferably, the layer material between the welding layer material and copper sheet and silicon carbide device between cooling fin and silicon carbide device
Expect identical.
Preferably, the layer material between the welding layer material and copper sheet and silicon carbide device between cooling fin and silicon carbide device
Material is tin-lead solder.
Preferably, welding layer material Sn10Pb88Ag2Or Sn5Pb92.5Ag2.5。
Preferably, which is characterized in that mold is prepared by the thermoplastic polymeric material of 200 DEG C of heatproof or more high temperature.
Beneficial effects of the present invention are as follows:
Technical solution of the present invention provides a kind of encapsulating structure suitable for silicon carbide device, passes through the encapsulating structure energy
It is effective to promote current carrying capacities, improve product whole efficiency.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing；
Fig. 1 shows the silicon carbide device encapsulating structure of the prior art；
Fig. 2 shows silicon carbide device encapsulating structures a kind of in the embodiment of the present invention；And
Fig. 3 shows the encapsulation process of the silicon carbide device encapsulating structure according to the application.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
It should be understood that including, including in application documents, with being open type, expression includes but is not limited to.In specification
Described ordinal number first, second etc. is intended merely to the clear of description, rather than suitable for restriction element, component or component etc.
Sequence, that is, second element, portion can also be expressed as by being described as first element, component and component and second element, component or component
Part and component and first element, component or component.
As shown in Fig. 2, showing the silicon carbide device encapsulating structure 20 according to the embodiment of the present application in figure.As shown,
In the present embodiment, silicon carbide device encapsulating structure 20 includes cooling fin 203, lead frame 205 and mold including pin
207, wherein silicon carbide device to be packaged is arranged on cooling fin 203.In the present embodiment, by copper sheet 209 by silicon carbide
Device is connect with lead frame 205.Preferably, it connect silicon carbide device with lead frame 205 by copper sheet bonding.
In embodiments herein, copper sheet 209 can be the copper sheet for passing through corrosion or Sheet Metal Forming Technology formation.Copper sheet is not
It is limited to specific shape, depends on the specific design parameter of silicon carbide device, specifically, the shape of copper sheet depends on silicon carbide
The welding of the thickness and pin of welding layer material between the window size of device, thickness of detector, silicon carbide device and copper sheet 209
The size in area.
In addition, the width of copper sheet 209 and thickness are also not limited to specific specific size, those skilled in the art should be managed
Solution, can be required to the size of current born according to designed silicon carbide device to design the width and thickness of copper sheet 209,
Increase the width and thickness of copper sheet 209, correspondingly when required carrying more high current to reduce conducting resistance, reduce thermal resistance.
Preferably, in the present embodiment, silicon carbide device is welded on cooling fin 203 by welding layer material 201.Heat dissipation
The welding layer material between welding layer material and copper sheet and silicon carbide device between piece 203 and silicon carbide device is identical, can be with
For tin-lead material solder, the firmness welded with increase.
In embodiments herein, by copper sheet 209 rather than wire connects silicon carbide device and lead frame 205
It connects, interconnection conducting resistance can be reduced, under identical voltage and current output condition, reduce the conduction loss of device, in addition, because
It is much larger than wire or other banded structures for the area of copper sheet 209, so that the encapsulating structure 20 of the application is dissipated than traditional handicraft
Heat area is bigger, can effectively conduct the heat that device generates by copper sheet, to reduce the heat of silicon carbide device
Resistance, advantageously reduces device temperature rise, promotes the service life of device.In addition, by copper sheet rather than other shapes can enable increase
Silicon carbide is easier to be formed, and increases the stability of device.
The structure of the silicon carbide encapsulation of the application is further described below with reference to the encapsulation flow chart shown in Fig. 3 description.
In this embodiment, silicon carbide device with a thickness of 375 μm or so, in step 301, the point on cooling fin 203
Welding layer material, and silicon carbide device is mounted on cooling fin 203 by welding layer material in step 303.In step 305,
Copper sheet 209 is mounted on silicon carbide device copper sheet.Preferably, the welding layer material between cooling fin 203 and silicon carbide device with
And the welding layer material between copper sheet and silicon carbide device is identical, all can be tin-lead material solder, with increase welding firmness.
It is identical as chip welding layer material, it can be tin-lead solder, optional material has Sn10Pb88Ag2Or Sn5Pb92.5Ag2.5。
Next in step 307, the mode of the electrode reflow soldering of silicon carbide device is welded in by copper sheet 209 and is drawn
On wire frame 205, bonding (step 309) is completed, solder flux is cleaned after welding.
In step 311, capsulation material heating is turned into liquid, the thermoplasticity which is 200 DEG C of heatproof or more
The materials such as polymeric material, such as polyether-ether-ketone, polyphenylene sulfide, polybutylene terephthalate.Specifically, liquid is made by pressurization
Capsulation material injects in mold, by capsulation material curing molding in a mold, forms mold 207.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (9)
1. a kind of encapsulating structure of silicon carbide device, cooling fin, the cladding carbonization including being disposed with silicon carbide device thereon
The mold of silicon device and the cooling fin and lead frame including pin, it is characterised in that:
The silicon carbide device is connect by copper sheet with the lead frame.
2. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that the silicon carbide device passes through copper sheet
Bonding is connect with nead frame.
3. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that the copper sheet passes through corrosion or punching
Pressure technique is formed.
4. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that the shape of the copper sheet is according to
Welding layer material between the window size of silicon carbide device, the thickness of silicon carbide device, the silicon carbide device and the copper sheet
Thickness and the pin welding section size setting.
5. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that the width and thickness root of the copper sheet
It is set according to the load current value of the silicon carbide device.
6. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that the cooling fin and the silicon carbide
Welding layer material between device is identical as the welding layer material between the copper sheet and the silicon carbide device.
7. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that the cooling fin and the silicon carbide
The welding layer material between welding layer material and the copper sheet and the silicon carbide device between device is tin-lead solder.
8. the encapsulating structure of silicon carbide device as claimed in claim 6, which is characterized in that the welding layer material is
Sn10Pb88Ag2Or Sn5Pb92.5Ag2.5。
9. the encapsulating structure of silicon carbide device as described in claim 1, which is characterized in that it is characterized in that, the mold by
Thermoplastic polymeric material's preparation of 200 DEG C of heatproof or more high temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910150217.3A CN109904135A (en) | 2019-02-28 | 2019-02-28 | A kind of encapsulating structure of silicon carbide device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910150217.3A CN109904135A (en) | 2019-02-28 | 2019-02-28 | A kind of encapsulating structure of silicon carbide device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109904135A true CN109904135A (en) | 2019-06-18 |
Family
ID=66945946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910150217.3A Pending CN109904135A (en) | 2019-02-28 | 2019-02-28 | A kind of encapsulating structure of silicon carbide device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109904135A (en) |
Citations (9)
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|---|---|---|---|---|
| JP2004153234A (en) * | 2002-09-05 | 2004-05-27 | Toshiba Corp | Semiconductor device |
| US20080079021A1 (en) * | 2006-09-29 | 2008-04-03 | Reinhold Bayerer | Arrangement for cooling a power semiconductor module |
| US8120153B1 (en) * | 2005-09-16 | 2012-02-21 | University Of Central Florida Research Foundation, Inc. | High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module |
| JP2012151328A (en) * | 2011-01-20 | 2012-08-09 | Mitsubishi Electric Corp | Heat sink and semiconductor device equipped with heat sink |
| JP2013026361A (en) * | 2011-07-20 | 2013-02-04 | Panasonic Corp | Semiconductor device and manufacturing method therefor |
| CN104428890A (en) * | 2012-07-11 | 2015-03-18 | 三菱电机株式会社 | Semiconductor device and method for producing same |
| JP2015076562A (en) * | 2013-10-11 | 2015-04-20 | 三菱電機株式会社 | Power module |
| CN206116387U (en) * | 2016-09-26 | 2017-04-19 | 无锡新洁能股份有限公司 | Big current power semiconductor device's packaging structure |
| CN209282195U (en) * | 2019-02-28 | 2019-08-20 | 北京燕东微电子有限公司 | A kind of encapsulating structure of silicon carbide device |
-
2019
- 2019-02-28 CN CN201910150217.3A patent/CN109904135A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004153234A (en) * | 2002-09-05 | 2004-05-27 | Toshiba Corp | Semiconductor device |
| US8120153B1 (en) * | 2005-09-16 | 2012-02-21 | University Of Central Florida Research Foundation, Inc. | High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module |
| US20080079021A1 (en) * | 2006-09-29 | 2008-04-03 | Reinhold Bayerer | Arrangement for cooling a power semiconductor module |
| JP2012151328A (en) * | 2011-01-20 | 2012-08-09 | Mitsubishi Electric Corp | Heat sink and semiconductor device equipped with heat sink |
| JP2013026361A (en) * | 2011-07-20 | 2013-02-04 | Panasonic Corp | Semiconductor device and manufacturing method therefor |
| CN104428890A (en) * | 2012-07-11 | 2015-03-18 | 三菱电机株式会社 | Semiconductor device and method for producing same |
| JP2015076562A (en) * | 2013-10-11 | 2015-04-20 | 三菱電機株式会社 | Power module |
| CN206116387U (en) * | 2016-09-26 | 2017-04-19 | 无锡新洁能股份有限公司 | Big current power semiconductor device's packaging structure |
| CN209282195U (en) * | 2019-02-28 | 2019-08-20 | 北京燕东微电子有限公司 | A kind of encapsulating structure of silicon carbide device |
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